CN108346968A - A kind of saturable absorber and pulse laser based on your outer half metal film - Google Patents
A kind of saturable absorber and pulse laser based on your outer half metal film Download PDFInfo
- Publication number
- CN108346968A CN108346968A CN201810445111.1A CN201810445111A CN108346968A CN 108346968 A CN108346968 A CN 108346968A CN 201810445111 A CN201810445111 A CN 201810445111A CN 108346968 A CN108346968 A CN 108346968A
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- Prior art keywords
- layer
- saturable absorption
- metal film
- absorption device
- half metal
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
Abstract
The invention discloses a kind of saturable absorption device based on your outer half metal film, saturable absorption layer that structure is made of your outer semi-metallic and the optical thin film functional layer carried needed for the saturated absorbing layer form；Your the outer half metal film saturable absorption device is divided into reflection-type and transmission-type both of which, wherein reflection type structure, which is laid out, is from top to bottom：Optical substrate layer (1), your outer semimetal saturable absorption film layer (2), buffer layer (3) and reflecting layer (4)；Transmissive type construction is laid out：Optical substrate layer (1), outer that semimetal saturable absorption film layer (2), buffer layer (3).
Description
Technical field
The present invention relates to laser technology, specifically a kind of saturable absorber and pulse based on your outer half metal film swash
Light device.
Background technology
Ultra-short pulse laser light source all has high in fields such as bio-imaging, communication, medical operating and molecular spectrums
Application value.Ultra-short pulse laser is mainly realized by passive mode-locking mode.Passive mode-locking has without additional modulating equipment, production
The advantages that raw pulse width is narrow, pulse laser output stability is strong.It is to realize to obtain the device of saturated absorption or mechanism
The key condition of passive mode-locking.Semiconductor saturable absorbing mirror (SESAMs) has significant saturated absorption optical characteristics, and (light is inhaled
Receipts reduce with the increase of incident optical power), it has widely been studied and applied in laser with active-passive lock mould.Commercial
SESAMs is semiconductor quantum well structures, and the material of saturated absorbing layer usually selects GaAs, InP etc..These are limited to partly to lead
The factors such as the band gap of body material, the bandwidth of operation of SESAMs be typically only capable to covering visible light near infrared band (<2 μm), it is difficult to
Long wavelength (>2 μm) or the work of middle infrared band.On the other hand, SESAMs only can by ion bombardment, low-temperature epitaxy both
Method realizes the accuracy controlling to the material carrier relaxation time.And there is respective defects for these techniques itself.It finds wide
Device and new process with device work especially long wavelength's work realize the tune to a variety of nonlinear optics parameters of device
Control a, it has also become hot issue of ultrafast laser technique research field.
The tools such as carbon nanotube, graphene, black phosphorus, two-dimentional transient metal sulfide are utilized although having researcher and proposing
There is the low-dimension nano material of Reflection Optical Thin Film switching effect to make the saturable absorption device in broadband.But for its preparation process,
The method that the preparation generally use liquid phases of these materials is removed or shifted afterwards can cause in material there is a large amount of defect state,
Reduce the consistency of device manufacture.On the other hand, based on the saturated absorbing body of these materials, there are no a set of highly reliable
Nonlinear optics parameter regulation and control scheme is suggested.This all significantly limits the generation and development of ultra-short pulse laser.
Invention content
Purpose of the present invention is in view of the deficiencies of the prior art, it is infrared into provide a kind of working range covering near-infrared
The highly controllable saturable absorption device of wave band, nonlinear optics parameter.
Technical scheme of the present invention：A kind of saturable absorption device based on your outer half metal film, it is characterised in that：Its
The saturable absorption layer and carry the optical thin film functional layer needed for the saturated absorbing layer that structure is made of your outer semi-metallic
Composition；Your the outer half metal film saturable absorption device is divided into reflection-type and transmission-type both of which, wherein reflection-type
Topology layout is from top to bottom：Optical substrate layer (1), your outer semimetal saturable absorption film layer (2), buffer layer (3) and instead
Penetrate layer (4)；
Transmissive type construction is laid out：Optical substrate layer (1), your outer semimetal saturable absorption film layer (2),
Buffer layer (3).
The saturated absorption film layer (2) of your the outer half metal film saturable absorption device is by zero band gap, linear energy
Your outer semi-metallic of dispersion relation is constituted；Your the outer semi-metallic includes two telluride tungsten (WTe2), arsenic tantalum (TaAs),
Phosphatization tantalum (TaP) and arsenic niobium (NbAs)；Absorber thickness is selected as 1-1000nm, and bandwidth of operation covers 1-10 microns of near-infrared
With middle infrared band, realization accurately manipulates a variety of nonlinear parameters of device.
The temperature when saturated absorbing layer (2) of your outer half metal film saturable absorption device is annealed by controlling,
Different elemental defects degree is introduced in the material, or achievable non-thread to device optical by applying laterally or longitudinally electric field
The dynamic regulation of property parameter.
Thickness by controlling buffer layer makes saturable absorption layer have different linear absorptions in corresponding operation wavelength
Rate, and then the saturation light intensity of controllable device and saturable absorption curve.The buffer layer can pass through pulsed laser deposition
(PLD), the methods of magnetron sputtering, thermal evaporation, PECVD are realized.
The optical substrate layer needs highly transparent in service band.The material of optical substrate can be silica
(SiO2), GaAs (GaAs), aluminium oxide (Al2O3), calcirm-fluoride (CaF2) and mica etc., substrate thickness 0.1-10mm.
Optical reflecting layer can select the metal film of broadband high-reflection rate.Can also be that there is spy including gold, silver or aluminium film
The Bragg reflection grating of standing wave length total reflection and the optical filming material of high reflectance.
The pulse laser of the saturable absorption device of your the outer half metal film, the laser resonator use carry
The saturable absorber of confession realizes broadband pulse laser output as switch element；The laser include solid and
The laser of the form of optical-fiber laser；The saturated absorption device can select to be operated in transmission or reflection form；Laser is answered
Including pumping source, gain media, resonant cavity and the saturated absorption device.Laser, which can be operated in, adjusts Q and mode locking mode.
The preparation method of the saturable absorption device of your the outer half metal film, in the optical substrate of highly transparent
Use the outer that half metal film of the highly crystalline quality of pulsed laser deposition technology growth；Then pass through magnetron sputtering, laser pulse
Deposition or the method for thermal evaporation are directly by buffer layer plated film on saturable absorption layer；Finally, reuse pulsed laser deposition,
The technologies such as magnetron sputtering and thermal evaporation plate reflecting layer on the surface of the buffer layer.
Based on infrared saturable absorber in your outer half metal film, it is the outer that grown by pulse laser deposition
Half metal film serves as saturable absorption layer, the optical thin film functional layer needed for matching design and constitute.Since device uses
For the outer that semimetal of zero band gap, the second class of linear energy band relationship as saturable absorption layer, bandwidth of operation can cover near-infrared
To middle infrared band.And by control saturable absorption material elemental defects degree or the corresponding buffer layer thickness of structure or
Apply applied voltage, it can be achieved that a variety of nonlinear optics parameters to device accuracy controlling.In addition, the present invention also further carries
The specific embodiment for how applying the device to generate ultra-short pulse laser is supplied.
Advantageous effect：Outer that semimetal (Weyl semimetals) film that the present invention is grown using pulsed laser deposition
As saturable absorption layer, temperature when being annealed by controlling or the external hand such as control buffering thickness or application applied voltage
Section is, it can be achieved that a variety of nonlinear optics parameters to device regulate and control.Use outer that semimetal saturable absorption provided by the invention
The tune Q or mode locking of broadband range laser may be implemented in device.
Description of the drawings
Fig. 1 is the schematic diagram of your outer half metal film saturable absorption device of reflection-type in embodiment.
Fig. 2 is the schematic diagram of your outer half metal film saturable absorption device of transmission-type in embodiment.
Fig. 3 is the parameter tuning schematic diagram of your outer half metal film saturable absorption device of transmission-type in embodiment.
Fig. 4 is the broadband solid laser based on your reflective outer half metal film saturable absorber in embodiment
The schematic diagram of device.
Fig. 5 is the broadband fiber pulse laser based on your half metal film saturable absorber outside transmission-type in embodiment
The schematic diagram of device.
Specific implementation mode
Present invention is further described in detail below in conjunction with the accompanying drawings.
Specific embodiment is：A kind of saturable absorption device based on your outer half metal film, structure is by outer that
The saturable absorption layer and carry the optical thin film functional layer composition needed for the saturable absorption layer that half metal film material is constituted.
Your the outer half metal film saturable absorption device is divided into reflection-type and transmission-type both of which.Wherein, reflection type structure
It is laid out and is from top to bottom：Optical substrate layer (1), outer that semimetal saturable absorption film layer (2), buffer layer (3) and reflecting layer
(4)；
Transmissive type construction is laid out：Optical substrate layer (1), your outer semimetal saturable absorption film layer (2),
Buffer layer (3).
The saturated absorbing layer (2) of your the outer half metal film saturable absorption device is by zero band gap, linear energy dispersion
Your outer semi-metallic of relationship is constituted.Its material includes two telluride tungsten (WTe2), arsenic tantalum (TaAs), phosphatization tantalum (TaP) and arsenic
Change niobium (NbAs) etc..Absorber thickness is chosen as 1-1000nm, and bandwidth of operation covers 1-10 microns of near-infrared and middle infrared waves
Section, and can realize and a variety of nonlinear parameters of device are accurately manipulated.
The temperature when saturated absorbing layer (2) of your the outer half metal film saturable absorption device is annealed by controlling can
Different elemental defects degree is introduced in the material, or achievable non-thread to device optical by applying laterally or longitudinally electric field
The dynamic regulation of property parameter.
Aluminium oxide (Al can be selected in buffer layer (3) its material of your the outer half metal film saturable absorption device2O3)、
GaAs (GaAs), silica (SiO2) etc. one or more of materials.The thickness of buffer layer is usually 0.001-100 μ
m.Thickness by controlling buffer layer can make saturable absorption film have different linear absorption rates in corresponding operation wavelength,
And then the saturation light intensity and saturable absorption curve of controllable device.
Your the outer buffer layer (3) of half metal film saturable absorption device can be splashed by pulsed laser deposition, magnetic control
It penetrates, thermal evaporation, the methods of PECVD are realized.
Optical substrate (1) in your the outer half metal film saturable absorber needs highly transparent in service band.
The material of optical substrate can be silica (SiO2), GaAs (GaAs), aluminium oxide (Al2O3), calcirm-fluoride (CaF2) and mica
Deng substrate thickness 0.1-10mm.
Reflecting layer (4) in your the outer half metal film saturable absorber can select the metal of broadband high-reflection rate
Film, including gold, silver or aluminium film.Can also be the optics of the Bragg reflection grating and high reflectance that are totally reflected with specific wavelength
Coating Materials.
The preparation method of your outer half metal film saturable absorber is：In the optical substrate (1) of highly transparent
The outer that half metal film of highly crystalline quality is grown using pulsed laser deposition technique.Then pass through magnetron sputtering, pulse laser
Deposition or the method for thermal evaporation are directly by buffer layer (3) plated film on saturable absorption layer (2)；Finally, laser arteries and veins is reused
The technologies such as punching deposition, magnetron sputtering or thermal evaporation plate reflecting layer (4) on the surface of buffer layer (3).
The broadband pulse laser based on your outer half metal film saturable absorber should include pumping source, in
Infrared gain media, resonant cavity and the saturated absorption device.Laser, which can be operated in, adjusts Q and mode locking mode.
The broadband pulse laser based on outer that half metal film saturable absorber includes solid and optical fiber
The form of laser.The saturated absorption device can select to be operated in transmission or reflection form.
Fig. 1 provides a kind of embodiment design scheme of your outer half metal film saturable absorber of reflection-type.Saturable
The saturated absorbing layer and required optical thin film functional layer for absorbing device are divided into two kinds of structures of reflection-type and transmission-type.Wherein, instead
Emitting topology layout is from top to bottom distributed as：Optical substrate layer, outer your half metal film saturable absorption layer, optical buffer layers and
Reflecting layer；Transmissive type construction is laid out：Optical substrate layer, outer that half metal film saturable absorption layer, optical buffer layers.
Substrate (1) of the mica as saturated absorbing body is selected first.The optical substrate surface is smooth, roughness is low, holds
Easy cleaning, for growing outer that semi-metallic and carrying out optical coating.Preferred optical substrate has silica (SiO2), arsenic
Change gallium (GaAs), aluminium oxide (Al2O3), calcirm-fluoride (CaF2) and mica etc., substrate thickness is 0.1-10mm.
Typically example is：By purity be 99.999% tungsten source and tellurium source according to 1:2 dosage adds in 700 DEG C of condition
Heat prepares WTe in one week2Target target material.The target material is pressed into hard target using dry powder press, while being sealed against true
It is calcined in blank pipe.Coating operation is carried out later, and clean mica substrate is placed on to the vacuum of pulsed laser deposition equipment
In chamber, film is deposited into substrate surface using the KrF excimer laser beams that wavelength is 248nm, temperature is kept in operating process
300 DEG C, about 30 minutes time.It is deposited on the WTe that 30nm thickness is deposited in mica substrate (1)2, form saturable absorption layer
(2).Since the film prepared shows inhomogenous form, we are made annealing treatment to make up Material growth
Corresponding Te defects in the process, temperature is substantially controlled at 700 DEG C when annealing.According to the Te element dosage being added in annealing process
Difference, we can prepare the WTe of different degree of imperfections2Sample.It can be designed based on this condition and adjust saturable absorption layer
Nonlinear optics parameter, to prepare the saturable absorption device of different modulating depth, nonlinear loss.Pulsed laser deposition side
Outer that semi-metallic crystalline quality and non-linear optical property degree of repeatability prepared by formula is higher.
Saturated absorption material may also include two telluride tungsten (WTe2), arsenic tantalum (TaAs), phosphatization tantalum (TaP) and arsenic niobium
(NbAs) etc., the effect of the present invention is can reach, absorber thickness is chosen as 1-1000nm, especially 200-600nm.Then make
With the methods of magnetron sputtering, electron beam evaporation or thermal evaporation directly certain thickness buffering is grown on saturable absorption layer (2)
Layer (3).There is high stability to adapt to the demand of various working environments and in operating wave long wave for the material requirements of buffer layer
Section needs highly transparent, preferred material to have silica (SiO2), aluminium oxide (Al2O3) and calcirm-fluoride (CaF2) etc..Finally exist
The reflecting layer (4) of 80nm thickness is deposited using e-beam evaporation for the top of buffer layer (3), optional contour including gold, silver, aluminium
The optical filming material of reflectivity.
Fig. 2 provides a kind of design scheme of your outer half metal film saturable absorber of transmission-type.By outer that semimetal
Film saturated absorbing layer (2) is deposited directly to by pulse laser sediment method in optical substrate (1), is then splashed using magnetic control
It penetrates, the plated film of pulsed laser deposition, electron beam evaporation or thermal evaporation progress buffer layer (3), the external that semimetal of buffer layer
Material has protective effect, and the typical thickness of buffer layer is 100 nanometers to tens microns, and general 1-5 microns more preferable.In addition, logical
Crossing the thickness of control buffer layer can make saturated absorbing layer have different linear absorption rates in corresponding operation wavelength, and then adjustable
Control the saturation light intensity and saturable absorption curve of device.
Fig. 3 provides a kind of parameter tuning design scheme of transmission-type saturated absorption device.By Ultraviolet lithography, can
The both ends of saturable absorber build electrode, require dielectric layer thin as possible herein, in case the electric field to application affects greatly.
By applying transverse electric field to electrode, it can be achieved that dynamic regulation to a variety of nonlinear parameters of saturable absorber.
Fig. 4 provides the pulsed solid stale laser embodiment based on reflective saturated absorption device.Laser includes partly leading
Body pumping source (1), condenser lens (2), (3), plano-concave speculum (4), (6), (7), laser crystal (5), output coupling mirror (9) with
And reflective outer that half metal film saturated absorbing body (8).Collimated focus on laser crystal (5) of pump light (1) is absorbed
And signal light is generated, and vibrated in the resonant cavity that hysteroscope (4) (6) (7) (8) (9) is constituted.Your outer half metal film saturable is inhaled
Acceptor (8) has saturable absorption characteristic to light, to form pulse laser in resonant cavity.Fraction of laser light is by output coupling mirror
(9) transmission becomes laser and exports.
Fig. 5 show the ultrashort pulse fiber laser embodiment based on your outer half metal film saturable absorber.Swash
Light device uses ring resonator structure, including wavelength division multiplexer (2), gain fibre (3), isolator (4), fiber coupler (5)
And the outer that half metal film saturable absorber (6) of transmission-type.Pump light (1) is injected into gain by wavelength division multiplexer (2)
Optical fiber (3) generates signal light, and outer that semimetal saturable absorber (6) generates ultrashort pulse to oscillation light selective absorbing, every
Ensure laser in the one-way transmission of intracavitary from device (4), fiber coupler (5) extracts part energy outside chamber as exporting.
Present invention is not limited to the embodiments described above, using identical as the above-mentioned embodiment of the present invention or approximate structure,
Obtained from other structures design, within protection scope of the present invention.
Claims (9)
1. a kind of saturable absorption device based on your outer half metal film, it is characterised in that：Its structure is by outer that semimetal material
Expect the saturable absorption layer constituted and carries the optical thin film functional layer composition needed for the saturated absorbing layer；Half gold of outer that
Belong to film saturable absorption device and be divided into reflection-type and transmission-type both of which, wherein reflection type structure, which is laid out, is from top to bottom：
Optical substrate layer (1), your outer semimetal saturable absorption film layer (2), buffer layer (3) and reflecting layer (4)；
Transmissive type construction is laid out：Optical substrate layer (1), outer that semimetal saturable absorption film layer (2), buffering
Layer (3).
2. the saturable absorption device of your outer half metal film according to claim 1, it is characterised in that：The outer that half
The saturated absorption film layer (2) of metallic film saturable absorption device is by that semimetal outside zero band gap, linear energy dispersion relation
Material is constituted；Your the outer semi-metallic includes two telluride tungsten (WTe2), arsenic tantalum (TaAs), phosphatization tantalum (TaP) and arsenic
Niobium (NbAs)；Absorber thickness is selected as 1-1000nm, and bandwidth of operation covers 1-10 microns of near-infrared and middle infrared band, realizes
A variety of nonlinear parameters manipulation to device.
3. the saturable absorption device of your outer half metal film according to claim 2, it is characterised in that：The outer that half
The saturated absorbing layer (2) of metallic film saturable absorption device by control anneal when temperature, introduce in the material it is different
Elemental defects degree, or by applying the equal dynamic regulation that can be realized to device optical nonlinear parameter of laterally or longitudinally electric field.
4. the saturable absorption device of your outer half metal film according to claim 2 or 3, it is characterised in that：Pass through control
The thickness of buffer layer processed makes saturable absorption layer have different linear absorption rates, and then controllable device in corresponding operation wavelength
The saturation light intensity of part and saturable absorption curve；The buffer layer can pass through pulsed laser deposition (PLD), magnetron sputtering, heat
The methods of evaporation, PECVD are realized.
5. the saturable absorption device of your outer half metal film according to claim 2, it is characterised in that：The optics
Substrate layer needs highly transparent in service band.The material of optical substrate can be silica (SiO2), GaAs (GaAs), oxygen
Change aluminium (Al2O3), calcirm-fluoride (CaF2) and mica etc., substrate thickness 0.1-10mm.
6. the saturable absorption device of your outer half metal film according to claim 2, it is characterised in that：Optical reflecting layer
It can select the metal film of broadband high-reflection rate.Can also be the Bradley being totally reflected with specific wavelength including gold, silver or aluminium film
The optical filming material of lattice reflecting grating and high reflectance.
7. the pulse laser of the saturable absorption device of your the outer half metal film according to one of claim 1-6,
It is characterized in that：The laser resonator uses the saturable absorber provided as switch element, realizes that broadband pulse swashs
Light output；The laser includes the laser of the form of solid and optical-fiber laser；The saturated absorption device can select
It is operated in transmission or reflection form；Laser should include pumping source, gain media, resonant cavity and the saturated absorption device.Swash
Light device, which can be operated in, adjusts Q and mode locking mode.
8. the preparation method of the saturable absorption device of your the outer half metal film according to one of claim 1-6, special
Sign is：It is thin using your the outer semimetal of the highly crystalline quality of pulsed laser deposition technology growth in the optical substrate of highly transparent
Film；Then by magnetron sputtering, pulsed laser deposition or the method for thermal evaporation directly by buffer layer plated film in saturable absorption layer
On；Finally, the technologies such as pulsed laser deposition, magnetron sputtering and thermal evaporation are reused and plate reflection on the surface of the buffer layer
Layer.
9. the preparation method of the saturable absorption device of your outer half metal film according to claim 8, it is characterized in that：It will
Purity is 99.999% tungsten source and tellurium source according to 1:2 dosage prepares WTe in one week in 700 DEG C of condition heating2Target
Material；The target material is pressed into hard target using dry powder press, while being sealed against being calcined in vacuum tube；It carries out later
Clean mica substrate is placed in the vacuum chamber of pulsed laser deposition equipment by coating operation, the use of wavelength is 248nm's
Film is deposited to substrate surface by KrF excimer laser beams, and temperature is kept for 300 DEG C in operating process, time 20-50 minute；It is heavy
Product deposits the WTe of 30-50nm thickness in mica substrate (1)2, form saturable absorption layer (2)；It is made annealing treatment to make up
Corresponding Te defects during Material growth, temperature control is at 700 DEG C when annealing；According to the Te element agent being added in annealing process
The difference of amount can prepare the WTe of different degree of imperfections2Sample.
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| CN201810445111.1A CN108346968A (en) | 2018-05-10 | 2018-05-10 | A kind of saturable absorber and pulse laser based on your outer half metal film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810445111.1A CN108346968A (en) | 2018-05-10 | 2018-05-10 | A kind of saturable absorber and pulse laser based on your outer half metal film |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034219A (en) * | 2019-04-28 | 2019-07-19 | 福建兆元光电有限公司 | Light emitting diode and its manufacturing method |
| CN110440947A (en) * | 2019-08-13 | 2019-11-12 | 金华伏安光电科技有限公司 | A kind of temperature sensor based on outer your semimetal and semiconductors coupling structure |
| CN110580995A (en) * | 2018-06-07 | 2019-12-17 | 清华大学 | Ferromagnetic material, preparation method thereof and sensor |
| CN112751256A (en) * | 2020-12-24 | 2021-05-04 | 广东工业大学 | Saturable absorber based on tungsten ditelluride/tungsten disulfide heterojunction, preparation method and mode-locked fiber laser manufactured by saturable absorber |
-
2018
- 2018-05-10 CN CN201810445111.1A patent/CN108346968A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110580995A (en) * | 2018-06-07 | 2019-12-17 | 清华大学 | Ferromagnetic material, preparation method thereof and sensor |
| CN110034219A (en) * | 2019-04-28 | 2019-07-19 | 福建兆元光电有限公司 | Light emitting diode and its manufacturing method |
| CN110440947A (en) * | 2019-08-13 | 2019-11-12 | 金华伏安光电科技有限公司 | A kind of temperature sensor based on outer your semimetal and semiconductors coupling structure |
| CN112751256A (en) * | 2020-12-24 | 2021-05-04 | 广东工业大学 | Saturable absorber based on tungsten ditelluride/tungsten disulfide heterojunction, preparation method and mode-locked fiber laser manufactured by saturable absorber |
| CN112751256B (en) * | 2020-12-24 | 2021-12-10 | 广东工业大学 | Saturable absorber based on tungsten ditelluride/tungsten disulfide heterojunction, preparation method and mode-locked fiber laser manufactured by saturable absorber |
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