CN108346496A - A kind of PCT thermistor alloys silk - Google Patents
A kind of PCT thermistor alloys silk Download PDFInfo
- Publication number
- CN108346496A CN108346496A CN201810478022.7A CN201810478022A CN108346496A CN 108346496 A CN108346496 A CN 108346496A CN 201810478022 A CN201810478022 A CN 201810478022A CN 108346496 A CN108346496 A CN 108346496A
- Authority
- CN
- China
- Prior art keywords
- pct thermistor
- alloys silk
- mischmetal
- yttrium
- cerium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 37
- 239000000956 alloy Substances 0.000 title claims abstract description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910001122 Mischmetal Inorganic materials 0.000 claims abstract description 20
- 239000004411 aluminium Substances 0.000 claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 20
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 20
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 20
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 20
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a kind of PCT thermistor alloys silk, the PCT thermistor alloys silk is made of aluminium, nickel, vanadium, yttrium, cerium, mischmetal and copper.By the above-mentioned means, PCT thermistor alloys silk provided by the invention, has higher tensile strength and elongation percentage.
Description
Technical field
The present invention relates to B alloy wire fields, more particularly to a kind of PCT thermistor alloys silk.
Background technology
Thermistor is one kind to PTC (Positive Temperature Coefficient, positive temperature coefficient) has
The semiconductor resistor of temperature sensitivity, when more than certain temperature (Curie temperature), its resistance value is with temperature
Increase almost increasing in phase step type.PTC thermistors can it is excessive in current surge, when the temperature is excessively high to circuit rise protection
Effect.
Existing PCT thermistor alloys silk, tensile strength is low, and elongation percentage is relatively low.
Invention content
The invention mainly solves the technical problem of providing a kind of PCT thermistor alloys silks, have higher tension strong
Degree and elongation percentage.
In order to solve the above technical problems, one aspect of the present invention is：A kind of PCT thermistor alloys are provided
Silk, the PCT thermistor alloys silk are made of aluminium, nickel, vanadium, yttrium, cerium, mischmetal and copper, the PCT thermistor alloys
Silk each component mass percentage content be：
Aluminium：40%~49%;
Nickel：30%~39%；
Vanadium：0.05%~0.15%；
Yttrium：0.08%~0.18%；
Cerium：0.09%~0.19%;
Mischmetal：0.21%~0.29%
Copper：Surplus.
In a preferred embodiment of the present invention, the mass percentage content of the PCT thermistor alloys silk each component
For：Aluminium：40%；Nickel：30%；Vanadium：0.05%；Yttrium：0.08%；Cerium：0.09%；Mischmetal：0.21%；Copper：Surplus.
In a preferred embodiment of the present invention, the mass percentage content of the PCT thermistor alloys silk each component
For：Aluminium：41%；Nickel：32%；Vanadium：0.07%；Yttrium：0.11%；Cerium：0.11%；Mischmetal：0.22%；Copper：Surplus.
In a preferred embodiment of the present invention, the mass percentage content of the PCT thermistor alloys silk each component
For：Aluminium：43%；Nickel：33%；Vanadium：0.09%；Yttrium：0.13%；Cerium：0.12%；Mischmetal：0.23%；Copper：Surplus.
In a preferred embodiment of the present invention, the mass percentage content of the PCT thermistor alloys silk each component
For：Aluminium：45%；Nickel：35%；Vanadium：0.11%；Yttrium：0.15%；Cerium：0.16%；Mischmetal：0.25%；Copper：Surplus.
In a preferred embodiment of the present invention, the mass percentage content of the PCT thermistor alloys silk each component
For：Aluminium：46%；Nickel：36%；Vanadium：0.13%；Yttrium：0.16%；Cerium：0.18%；Mischmetal：0.27%；Copper：Surplus.
The beneficial effects of the invention are as follows：A kind of PCT thermistor alloys silk that the present invention points out has higher tension strong
Degree and elongation percentage.
Specific implementation mode
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
All other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects
It encloses.
Embodiment 1：The mass percentage content of the PCT thermistor alloys silk each component is：Aluminium：40%；Nickel：30%；
Vanadium：0.05%；Yttrium：0.08%；Cerium：0.09%；Mischmetal：0.21%；Copper：Surplus.
Embodiment 2：The mass percentage content of the PCT thermistor alloys silk each component is：Aluminium：41%；Nickel：32%；
Vanadium：0.07%；Yttrium：0.11%；Cerium：0.11%；Mischmetal：0.22%；Copper：Surplus.
Embodiment 3：The mass percentage content of the PCT thermistor alloys silk each component is：Aluminium：43%；Nickel：33%；
Vanadium：0.09%；Yttrium：0.13%；Cerium：0.12%；Mischmetal：0.23%；Copper：Surplus.
Embodiment 4：The mass percentage content of the PCT thermistor alloys silk each component is：Aluminium：45%；Nickel：35%；
Vanadium：0.11%；Yttrium：0.15%；Cerium：0.16%；Mischmetal：0.25%；Copper：Surplus.
Embodiment 5：The mass percentage content of the PCT thermistor alloys silk each component is：Aluminium：46%；Nickel：36%；
Vanadium：0.13%；Yttrium：0.16%；Cerium：0.18%；Mischmetal：0.27%；Copper：Surplus.
Test case：PCT thermistor alloy silks in embodiment 1-5 are tested for the property, test method is with reference to corresponding
National standard, test result is shown in Table 1.
Table 1：
| Tensile strength（MPa） | Elongation percentage（%） | |
| Embodiment 1 | 560 | 40 |
| Embodiment 2 | 561 | 41 |
| Embodiment 3 | 562 | 39 |
| Embodiment 4 | 559 | 42 |
| Embodiment 5 | 563 | 43 |
| Existing product | 540 | 29 |
In conclusion a kind of PCT thermistor alloys silk that the present invention points out, has higher tensile strength and elongation percentage.
Example the above is only the implementation of the present invention is not intended to limit the scope of the invention, every to utilize this hair
Equivalent structure or equivalent flow shift made by bright description is applied directly or indirectly in other relevant technology necks
Domain is included within the scope of the present invention.
Claims (6)
1. a kind of PCT thermistor alloys silk, which is characterized in that the PCT thermistor alloys silk by aluminium, nickel, vanadium, yttrium, cerium,
Mischmetal and copper composition, the mass percentage content of the PCT thermistor alloys silk each component are：
Aluminium：40%~49%;
Nickel：30%~39%；
Vanadium：0.05%~0.15%；
Yttrium：0.08%~0.18%；
Cerium：0.09%~0.19%;
Mischmetal：0.21%~0.29%
Copper：Surplus.
2. PCT thermistor alloys silk according to claim 1, which is characterized in that the PCT thermistor alloys silk is each
The mass percentage content of component is：Aluminium：40%；Nickel：30%；Vanadium：0.05%；Yttrium：0.08%；Cerium：0.09%；Mischmetal：
0.21%；Copper：Surplus.
3. PCT thermistor alloys silk according to claim 1, which is characterized in that the PCT thermistor alloys silk is each
The mass percentage content of component is：Aluminium：41%；Nickel：32%；Vanadium：0.07%；Yttrium：0.11%；Cerium：0.11%；Mischmetal：
0.22%；Copper：Surplus.
4. PCT thermistor alloys silk according to claim 1, which is characterized in that the PCT thermistor alloys silk is each
The mass percentage content of component is：Aluminium：43%；Nickel：33%；Vanadium：0.09%；Yttrium：0.13%；Cerium：0.12%；Mischmetal：
0.23%；Copper：Surplus.
5. PCT thermistor alloys silk according to claim 1, which is characterized in that the PCT thermistor alloys silk is each
The mass percentage content of component is：Aluminium：45%；Nickel：35%；Vanadium：0.11%；Yttrium：0.15%；Cerium：0.16%；Mischmetal：
0.25%；Copper：Surplus.
6. PCT thermistor alloys silk according to claim 1, which is characterized in that the PCT thermistor alloys silk is each
The mass percentage content of component is：Aluminium：46%；Nickel：36%；Vanadium：0.13%；Yttrium：0.16%；Cerium：0.18%；Mischmetal：
0.27%；Copper：Surplus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810478022.7A CN108346496B (en) | 2018-05-18 | 2018-05-18 | A kind of PTC thermistor alloy wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810478022.7A CN108346496B (en) | 2018-05-18 | 2018-05-18 | A kind of PTC thermistor alloy wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108346496A true CN108346496A (en) | 2018-07-31 |
| CN108346496B CN108346496B (en) | 2019-11-12 |
Family
ID=62956355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810478022.7A Expired - Fee Related CN108346496B (en) | 2018-05-18 | 2018-05-18 | A kind of PTC thermistor alloy wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108346496B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4676829A (en) * | 1985-10-03 | 1987-06-30 | General Electric Company | Cold worked tri-nickel aluminide alloy compositions |
| CN1100558A (en) * | 1993-09-17 | 1995-03-22 | 东南大学 | Producing method for linear PTC metal-film thermal resistor |
| JPH08277429A (en) * | 1995-01-20 | 1996-10-22 | Res Inst Electric Magnetic Alloys | Electric resistance alloy having high resistance temperature coefficient, its production and sensor device |
| CN104711455A (en) * | 2013-12-16 | 2015-06-17 | 深南电路有限公司 | Film resistor material, film resistor and preparation method of film resistor |
| CN105308204A (en) * | 2013-06-19 | 2016-02-03 | 伊莎贝尔努特·霍伊斯勒两合公司 | Resistor alloy, component produced therefrom and production method therefor |
| CN106086557A (en) * | 2016-06-08 | 2016-11-09 | 南昌大学 | A kind of Mn Cu Al temperature-sensitive damp alloy material and preparation method thereof |
-
2018
- 2018-05-18 CN CN201810478022.7A patent/CN108346496B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4676829A (en) * | 1985-10-03 | 1987-06-30 | General Electric Company | Cold worked tri-nickel aluminide alloy compositions |
| CN1100558A (en) * | 1993-09-17 | 1995-03-22 | 东南大学 | Producing method for linear PTC metal-film thermal resistor |
| JPH08277429A (en) * | 1995-01-20 | 1996-10-22 | Res Inst Electric Magnetic Alloys | Electric resistance alloy having high resistance temperature coefficient, its production and sensor device |
| CN105308204A (en) * | 2013-06-19 | 2016-02-03 | 伊莎贝尔努特·霍伊斯勒两合公司 | Resistor alloy, component produced therefrom and production method therefor |
| CN104711455A (en) * | 2013-12-16 | 2015-06-17 | 深南电路有限公司 | Film resistor material, film resistor and preparation method of film resistor |
| CN106086557A (en) * | 2016-06-08 | 2016-11-09 | 南昌大学 | A kind of Mn Cu Al temperature-sensitive damp alloy material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108346496B (en) | 2019-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20191017 Address after: Haiyu Zhen Zhou Xing Zhi Zhou Lu, Changshu City, Suzhou City, Jiangsu Province Applicant after: Changshu quark Resistance Alloy Co.,Ltd. Address before: 215151 Yangshan science and Technology Industrial Park, Hu Guan Guan, hi tech Zone, Suzhou, Jiangsu Applicant before: SUZHOU TIANHONG ELECTRONICS Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191112 |