CN108336640B - High-power semiconductor laser and preparation method thereof - Google Patents
High-power semiconductor laser and preparation method thereof Download PDFInfo
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- CN108336640B CN108336640B CN201710040685.6A CN201710040685A CN108336640B CN 108336640 B CN108336640 B CN 108336640B CN 201710040685 A CN201710040685 A CN 201710040685A CN 108336640 B CN108336640 B CN 108336640B
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- laser
- heat sink
- insulating layer
- width
- laser light
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 230000007704 transition Effects 0.000 claims abstract description 47
- 229910000679 solder Inorganic materials 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 8
- 230000004907 flux Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000000498 cooling water Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 3
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A high power semiconductor laser and a method for manufacturing the same. The semiconductor laser comprises a base, an insulating layer and a laser module; an insulating layer is arranged on the base; the laser module comprises at least one laser light-emitting unit, the laser light-emitting unit consists of a laser chip and transition heat sinks at two sides of the laser chip, and the transition heat sink at one side is an L-shaped transition heat sink with steps. The preparation method comprises the following steps: (1) forming a laser light emitting unit; (2) Connecting a required number of laser light-emitting units through solder to form a laser module; (3) And bonding the insulating layer, the base, the positive electrode, the negative electrode and the laser module. The invention increases the contact area between the laser light-emitting unit and the insulating layer, is convenient for bonding, reduces bonding holes, is firm in bonding, increases the distance between the positive electrode and the negative electrode of the laser unit, and reduces the probability of short circuit.
Description
Technical Field
The invention relates to a structure of a high-power semiconductor laser and a preparation method thereof, belonging to the technical field of semiconductor lasers.
Background
The semiconductor laser has the advantages of small volume, high power, stable performance and the like, and the application range of the semiconductor laser is wider and wider. Along with the increasing output power of semiconductor lasers, the applications of semiconductor lasers in the industrial fields of laser welding, laser cutting, laser drilling, laser medical treatment and the like are also rapidly developed. The same performance requirements for lasers are increasing. The performance of the laser is related to the heat dissipation and packaging of the laser in addition to the epitaxial material.
The packaging processes of the conduction-cooled high-power semiconductor lasers commonly used at present mainly comprise two types as shown in fig. 1 and 2. The scheme shown in fig. 1 is that a plurality of chips and a plurality of electric and heat conducting transition heat sinks (such as copper, copper tungsten and the like) are welded at the same time, then welded on an insulating and heat conducting substrate integrally, and then the module is bonded on a base to fix electrodes, so that the preparation of the laser is completed. Or directly placing all the components into a specific fixture as required at one time to finish one-time bonding.
Fig. 2 is a schematic diagram of a method for manufacturing a high-power semiconductor laser. And simultaneously welding the single laser chip, the electric conduction and heat conduction transition heat sink and the insulating and heat conduction sheet to manufacture a semiconductor laser luminous unit, testing the laser unit, and bonding the qualified laser unit on the base to manufacture the high-power semiconductor laser.
However, the above processes all have the following disadvantages:
(1) In the technical process of the scheme of fig. 1, the chip, the heat sink, the insulating layer and the base can be bonded simultaneously or bonded and formed twice successively, once the consistency of the chip is poor, the whole device can not be used, the qualification rate of the device is low, and huge material and labor are wasted;
(2) In the fig. 2 scheme, although the screening problem in the fig. 1 scheme is avoided, there is also a problem of high process requirements and low yield. In the two schemes, because a plurality of semiconductor laser light-emitting units are bonded, a precise clamp is needed for alignment, meanwhile, the thickness of a laser chip is only about 0.1mm, and the thickness of a transitional heat sink is only about 1 mm. When two adjacent light-emitting units are bonded through solder, the risk of short circuit exists, and meanwhile, when the light-emitting units are bonded to an insulating layer, the hidden danger of welding holes or infirm welding exists due to small size, so that the device has poor heat dissipation, and the reliability and the service life are reduced.
Disclosure of Invention
In order to overcome the defects of the existing high-power semiconductor laser packaging technology, the invention provides a high-power semiconductor laser and a preparation method thereof, which can effectively solve the problems of low qualification rate, poor bonding quality, low reliability and the like of the laser in the existing structural scheme and promote the rapid development of the high-power semiconductor laser.
The technical scheme of the high-power semiconductor laser is as follows:
the semiconductor laser comprises a base, an insulating layer and a laser module; an insulating layer is arranged on the base; the positive electrode, the laser module and the negative electrode are arranged on the insulating layer, the laser module is arranged between the positive electrode and the negative electrode, and the positive electrode and the negative electrode are respectively connected with the laser module; the laser module comprises at least one laser light emitting unit, and each laser light emitting unit is horizontally arranged on the insulating layer; the laser luminous unit is composed of a laser chip and transition heat sinks arranged on two sides of the laser chip, wherein the transition heat sink on one side is an L-shaped transition heat sink with a step, the laser chip and the other transition heat sink are arranged on the step of the L-shaped transition heat sink, and the width of the bottom edge of the L-shaped transition heat sink is smaller than that of the laser luminous unit.
A cooling water cavity is arranged in the base.
The width of the bottom edge of the L-shaped transition heat sink is 0.2mm-0.6mm smaller than the width of the laser light-emitting unit so as to prevent short circuit during bonding.
The positive electrode is arranged on one side of the L-shaped transition heat sink.
The region where the insulating layer is combined with the laser module is provided with periodic grooves, and the period of the grooves is consistent with the width of the laser light emitting units in the laser module. The width of the notch is the difference between the width of the bottom edge of the L-shaped transition heat sink and the width of the laser light-emitting unit.
The area where the insulating layer is contacted with the laser module is provided with a solder layer with a periodical isolation groove, the period of the isolation groove is consistent with the width of the laser light-emitting unit, and the width of the isolation groove is the difference between the width of the bottom edge of the L-shaped transition heat sink and the width of the laser light-emitting unit.
And the surfaces of the base, the positive electrode, the negative electrode and the transitional heat sink are provided with gold plating layers.
The preparation method of the high-power semiconductor laser comprises the following steps:
(1) Placing a laser chip and another transitional heat sink above the step of the L-shaped transitional heat sink, arranging indium solder in the bonding area corresponding to the transitional heat sink on the two sides of the laser chip, placing the laser chip and the indium solder into a sintering clamp together, and bonding the laser chip and the transitional heat sink by the solder for one time to form a laser light-emitting unit;
the bonding areas of the two transition heat sinks and the laser chip are made of indium solder, gold-tin solder or other solders meeting bonding requirements.
(2) Connecting a required number of laser light-emitting units through solder to form a laser module;
(3) The positive electrode, the negative electrode and the laser module are connected with the insulating layer by adopting welding flux; the insulating layer is engraved with periodic grooves or the solder of the insulating layer is provided with periodic isolation grooves; joints between adjacent laser light emitting units in the laser module are positioned on the notch groove of the insulating layer or on the isolation groove of the solder of the insulating layer; the insulating layer, the base, the positive electrode, the negative electrode and the laser module are assembled and fixed into a fixture for bonding.
The two sides of the insulating layer except the notch groove are provided with solder, and the bonding temperature of the solder is lower than the bonding temperature of the solder required by the laser chip and the transitional heat sink (such as silver tin copper solder).
And the bonding temperature of the welding materials among the laser light-emitting units, between the positive electrode and the negative electrode and between the positive electrode and the insulating layer is lower than that of the welding materials between the transition heat sink and the laser chip.
The invention has the advantages that the L-shaped transitional heat sink with the steps is designed, so that the contact area of the laser light-emitting unit and the insulating layer is increased, the bonding is convenient, and the bonding cavity and the problem of infirm bonding due to small contact area are reduced. Meanwhile, the distance between the positive electrode and the negative electrode of the laser unit is increased, and the probability of short circuit is reduced. By implementing the invention, the yield of the high-power laser module can be generally improved and the consistency can be improved.
Drawings
Fig. 1 is a process schematic of a first prior art semiconductor laser fabrication process.
Fig. 2 is a process schematic of a second prior art semiconductor laser fabrication process.
Fig. 3 is a schematic structural view of the high power semiconductor laser of the present invention.
In the figure: 1. a base; 2. a negative electrode; 3. an L-shaped transitional heat sink; 4. a common transitional heat sink; 5. a laser chip; 6. a positive electrode; 7. an insulating layer; 8. grooving; A. the width of the laser light emitting unit; B. the width of the bottom edge of the L-shaped transition heat sink 3.
Detailed Description
Example 1
The high power semiconductor laser of the present invention, as shown in fig. 3, includes a submount 1, an insulating layer 7, and a laser module. An insulating layer 7 is provided on the base 1. The base 1 is made of high-heat-conductivity materials such as copper and the like, and is internally provided with a cooling water cavity with water cooling holes. A laser module is arranged above the insulating layer 7, and positive electrodes 6 and negative electrodes 2 are arranged between the laser modules on both sides of the insulating layer 7. The laser module, the insulating layer 7 and the submount 1 are bonded by solder to form a complete semiconductor laser. The laser module comprises at least one laser light emitting unit (three laser light emitting units in fig. 3), each laser light emitting unit being arranged horizontally together above the insulating layer 7. The laser light-emitting unit is composed of a laser chip 5 and transition heat sinks arranged at two sides of the laser chip 5, and the laser chip 5 and the transition heat sinks at two sides are bonded together through solder. Wherein, the transitional heat sink at one side is an L-shaped transitional heat sink 3 with steps, and the transitional heat sink at one side is a common transitional heat sink 4 (rectangular block shape). The laser chip 5 and the common heat transfer sink 4 are arranged above the step of the L-shaped heat transfer sink 3, and the laser chip and the common heat transfer sink are not contacted with the step surface of the L-shaped heat transfer sink 3. The width B of the bottom edge of the L-shaped transition heat sink 3 is smaller than the width A of the laser light-emitting unit by 0.2mm-0.6mm so as to prevent short circuit during bonding.
The positive electrode 6 is arranged on the side of the L-shaped transition heat sink 3, and the negative electrode 2 is arranged on the side of the common transition heat sink 4. The positive electrode 6 and the negative electrode 2 are made of copper, silver and other materials with high electric conductivity and heat conductivity, and can be connected with the laser module by solder or physical fixation.
The material of the L-shaped heat sink 3 and the general heat sink 4 may be copper or tungsten copper. The welding flux adopted in the bonding area of the two transition heat sinks and the laser chip 5 is indium welding flux, gold-tin welding flux or other welding fluxes meeting the bonding requirement.
The insulating layer 7 is made of AlN ceramic material, and the surface is plated with gold. The region of the insulating layer 7 where the laser module is bonded is provided with periodic grooves 8, the period of the grooves 8 corresponding to the width of the laser light emitting unit. The width of the notch 8 is the difference between the width A of the bottom edge of the L-shaped transition heat sink 3 and the width B of the laser light emitting unit. The regions of the insulating layer 7 on both sides except the score grooves 8 are provided with a solder, such as indium solder or silver tin copper solder, having a bonding temperature lower than the temperature required for the bonding of the solder by the heat sink.
The surfaces of the base 1, the positive electrode 6, the negative electrode 2, the L-shaped transition heat sink 3 and the common transition heat sink 4 are all plated with gold.
The preparation process of the high-power semiconductor laser is as follows:
1. the laser chip 5 is arranged between the L-shaped transition heat sink 3 and the common transition heat sink 4, the laser chip 5 and the common transition heat sink 4 are arranged above the step of the L-shaped transition heat sink 3 and are not contacted with the step surface, and the laser chip 5, the common transition heat sink 4 and the step surface are arranged in a sintering clamp together and bonded once through solder to form the laser luminous unit. The bonding areas of the two transition heat sinks and the laser chip 5 are made of indium solder, gold-tin solder or other solders meeting bonding requirements.
2. The laser light-emitting units are tested and screened, a plurality of qualified (preferably 2-6) laser light-emitting units are horizontally arranged together to form a laser module, and the laser light-emitting units are connected through indium solder. The bonding temperature of the solder between the laser light emitting units is lower than the bonding temperature of the solder between the transition heat sink and the laser chip.
3. According to the position designed in fig. 3, the insulating layer 7, the base 1, the positive electrode 6, the negative electrode 2 and the laser module are assembled and fixed into a jig. The positive electrode 6 and the laser module and the negative electrode 2 and the laser module are connected by adopting indium solder, and the positive electrode 6, the negative electrode 2 and the laser module are connected by adopting solder with the insulating layer 7. The joints between adjacent laser light emitting units in the laser module are located on the score grooves 8 of the insulating layer 7. And placing the fixture into a reflow sintering furnace to bond according to the bonding temperature of the solder.
The bonding temperature of the solder between the positive electrode and the laser light-emitting unit and between the positive electrode and the insulating layer is lower than the bonding temperature of the solder between the transition heat sink and the laser chip.
Example 2
This embodiment differs from embodiment 1 in that the solder on the side of the insulating layer 7 that is in contact with the laser module is provided with periodic isolation grooves. The period of the isolation groove is consistent with the width A of the laser light-emitting unit, and the width of the isolation groove is the difference between the width A of the bottom edge of the L-shaped transition heat sink 3 and the width A of the laser light-emitting unit.
Claims (10)
1. A high power semiconductor laser includes a base, an insulating layer and a laser module; the method is characterized in that: an insulating layer is arranged on the base; the positive electrode, the laser module and the negative electrode are arranged on the insulating layer, the laser module is arranged between the positive electrode and the negative electrode, and the positive electrode and the negative electrode are respectively connected with the laser module; the laser module comprises at least one laser light emitting unit, and each laser light emitting unit is horizontally arranged on the insulating layer; the laser luminous unit is composed of a laser chip and transition heat sinks arranged on two sides of the laser chip, wherein the transition heat sink on one side is an L-shaped transition heat sink with a step, the laser chip and the other transition heat sink are arranged on the step of the L-shaped transition heat sink, and the width of the bottom edge of the L-shaped transition heat sink is smaller than that of the laser luminous unit.
2. The high power semiconductor laser of claim 1, wherein: a cooling water cavity is arranged in the base.
3. The high power semiconductor laser of claim 1, wherein: the width of the bottom edge of the L-shaped transition heat sink is 0.2mm-0.6mm smaller than the width of the laser light-emitting unit.
4. The high power semiconductor laser of claim 1, wherein: the positive electrode is arranged on one side of the L-shaped transition heat sink.
5. The high power semiconductor laser of claim 1, wherein: the region where the insulating layer is combined with the laser module is provided with periodic grooves, and the period of the grooves is consistent with the width of the laser light emitting units in the laser module.
6. The high power semiconductor laser of claim 5, wherein: the width of the notch is the difference between the width of the bottom edge of the L-shaped transition heat sink and the width of the laser light-emitting unit.
7. The high power semiconductor laser of claim 1, wherein: the area where the insulating layer is contacted with the laser module is provided with a solder layer with a periodical isolation groove, the period of the isolation groove is consistent with the width of the laser light-emitting unit, and the width of the isolation groove is the difference between the width of the bottom edge of the L-shaped transition heat sink and the width of the laser light-emitting unit.
8. The high power semiconductor laser of claim 1, wherein: and the surfaces of the base, the positive electrode, the negative electrode and the transitional heat sink are provided with gold plating layers.
9. A method of manufacturing a high power semiconductor laser of claim 1, characterized by: the method comprises the following steps:
(1) Placing a laser chip and another transitional heat sink above the step of the L-shaped transitional heat sink, arranging indium solder in the bonding area corresponding to the transitional heat sink on the two sides of the laser chip, placing the laser chip and the indium solder into a sintering clamp together, and bonding the laser chip and the transitional heat sink by the solder for one time to form a laser light-emitting unit;
(2) Connecting a required number of laser light-emitting units through solder to form a laser module;
(3) The positive electrode, the negative electrode and the laser module are connected with the insulating layer by adopting welding flux; the insulating layer is engraved with periodic grooves or the solder of the insulating layer is provided with periodic isolation grooves; joints between adjacent laser light emitting units in the laser module are positioned on the notch groove of the insulating layer or on the isolation groove of the solder of the insulating layer; the insulating layer, the base, the positive electrode, the negative electrode and the laser module are assembled and fixed into a fixture for bonding.
10. The method for manufacturing a high-power semiconductor laser according to claim 9, characterized in that: and the bonding temperature of the welding materials among the laser light-emitting units, between the positive electrode and the negative electrode and between the positive electrode and the insulating layer is lower than that of the welding materials between the transition heat sink and the laser chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710040685.6A CN108336640B (en) | 2017-01-20 | 2017-01-20 | High-power semiconductor laser and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710040685.6A CN108336640B (en) | 2017-01-20 | 2017-01-20 | High-power semiconductor laser and preparation method thereof |
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| CN108336640A CN108336640A (en) | 2018-07-27 |
| CN108336640B true CN108336640B (en) | 2024-02-09 |
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| CN112701561B (en) * | 2020-12-30 | 2022-02-22 | 深圳市利拓光电有限公司 | Packaging structure and packaging method of high-speed 25G semiconductor laser chip |
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| CN108336640A (en) | 2018-07-27 |
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