CN108318058A - A kind of system and method providing bias voltage for Hall sensor - Google Patents
A kind of system and method providing bias voltage for Hall sensor Download PDFInfo
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- CN108318058A CN108318058A CN201810208622.1A CN201810208622A CN108318058A CN 108318058 A CN108318058 A CN 108318058A CN 201810208622 A CN201810208622 A CN 201810208622A CN 108318058 A CN108318058 A CN 108318058A
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- hall sensor
- voltage
- bias
- current offset
- current
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
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- Measuring Magnetic Variables (AREA)
Abstract
The present invention relates to sensor technical fields, specially a kind of system and method providing bias voltage for Hall sensor, it can ensure the good linearity and faster reaction speed while it provides bias voltage for Hall sensor, it includes Hall sensor, Hall sensor includes voltage bias Hall sensor and current offset Hall sensor, the ends B of current offset Hall sensor and voltage bias Hall sensor are grounded, the input terminal of the ends T connection current source one end and linear voltage regulator of current offset Hall sensor, the current source other end connects power vd D, the ends T of the output end connection voltage bias Hall sensor of linear voltage regulator, the voltage difference at the voltage bias ends Hall sensor L and the ends R is output voltage VH, VH follows induced field B linear changes.
Description
Technical field
The present invention relates to sensor technical field, specially a kind of system and side that bias voltage is provided for Hall sensor
Method.
Background technology
As the sensing technology of one of three big technology of modern technologies, quick application and development have been obtained in recent years.
Hall sensor is a kind of Magnetic Sensor, based on Hall effect, since self-discovery Hall effect, as base
The Hall sensor of plinth is more and more applied to industrial circle.
Integrated hall sensors have many advantages, such as high reliability, low cost, low-power consumption, can realize velocity measuring, linear
The functions such as position detection, rotation counting, current detecting.
In the prior art, for there are mainly two types of the biasings of Hall sensor：
1）, current offset, current offset Hall sensor has good linearity characteristic, anti-but since electric current is fixed
Answer speed slow；
2）, voltage bias, voltage bias Hall sensor has than faster reaction speed, but due to flowing through Hall sensor
Electric current with temperature and change in pressure, therefore its linearity is poor.
Invention content
It is Hall the present invention provides one kind to solve the problems, such as can not to ensure good linearity and fast reaction simultaneously
The system and method that sensor provides bias voltage, can ensure good while providing bias voltage for Hall sensor
The linearity and faster reaction speed.
Its technical solution is such：A kind of system providing bias voltage for Hall sensor comprising hall sensing
Device, which is characterized in that the Hall sensor includes voltage bias Hall sensor and current offset Hall sensor, the electricity
The ends B of stream biasing Hall sensor and the voltage bias Hall sensor are grounded, the T of the current offset Hall sensor
The input terminal of end connection current source one end and linear voltage regulator, the current source other end connect power vd D, the linear voltage stabilization
The output end of device connects the ends T of the voltage bias Hall sensor, the electricity at the ends voltage bias Hall sensor L and the ends R
Pressure difference is output voltage VH.
A method of providing bias voltage for Hall sensor, which is characterized in that by the T of current offset Hall sensor
End connects power vd D by current source, and the ends T of current offset Hall sensor and the ends T of voltage bias Hall sensor pass through
Linear transducer is connected, and the ends L of voltage bias Hall sensor and the voltage difference at the ends R are output voltage VH, VH=S*Vb*B ...
①
Wherein, S is the sensitivity of voltage bias Hall sensor, and B is induced field size,
Vb=I*R1*G/R2……②
Wherein, I is the current value of current source, and R1 is the internal resistance of current offset Hall sensor, and R2 is voltage bias hall sensing
The internal resistance of device, G are the amplification factor of linear voltage regulator, and current offset Hall sensor and voltage bias Hall sensor are in chip
It is internally integrated, puts together, therefore R1=R2；
2. formula is brought into formula 1. obtain VH=S*B*I*G, S, I, G are fixed value, and VH follows induced field B linear changes.
After system and method using the present invention, two Hall sensors are connected by linear voltage regulator so that output
Bias voltage there is the good linearity, and since output voltage is realized based on voltage bias mode, but also with
Fast reaction characteristic.
Description of the drawings
Fig. 1 is voltage bias schematic diagram in the prior art；
Fig. 2 is current offset schematic diagram in the prior art；
Fig. 3 is principle of the invention figure.
Specific implementation mode
As shown in Figure 3, a kind of system providing bias voltage for Hall sensor comprising voltage bias Hall sensor
304 and current offset Hall sensor 302, the ends B of current offset Hall sensor 302 and voltage bias Hall sensor 304
It is grounded, the input of the ends T connection 301 one end of current source and built-in linear voltage regulator 303 of current offset Hall sensor 302
End, 301 other end of current source connect power vd D, the output end connection voltage bias Hall sensor 304 of linear voltage regulator 303
The ends T, the ends L of voltage bias Hall sensor 304 and the voltage difference at the ends R are output voltage VH.
A method of bias voltage being provided for Hall sensor, the ends T of current offset Hall sensor 302 are passed through into electricity
Stream source 301 connects power vd D, and the ends T of current offset Hall sensor 302 and the ends T of voltage bias Hall sensor 304 pass through
Linear transducer 303 is connected, and the ends L of voltage bias Hall sensor 304 and the voltage difference at the ends R are output voltage VH, VH=S*
Vb*B……①
Wherein, S is the sensitivity of voltage bias Hall sensor 304, and B is induced field size,
Vb=I*R1*G/R2……②
Wherein, I be current source 301 current value, R1 be current offset Hall sensor 302 internal resistance, R2 be voltage bias suddenly
The internal resistance of your sensor 304, G are the amplification factor of linear voltage regulator 303, current offset Hall sensor 302 and voltage bias
Portion is integrated in the chip for Hall sensor 304, can put together, it can be considered that R1=R2；
2. formula is brought into formula 1. obtain VH=S*B*I*G, due to the sensitivity S of voltage bias Hall sensor 304, electric current
The current value I in source 301, the amplification factor G of linear voltage regulator 303 are fixed value, and voltage bias Hall sensor 304 exports electricity
The variation of pressure VH only follows induced field B linear changes.
To sum up, the present invention has the following advantages：
（1）Improve the linearity of Hall sensor, improves detection accuracy；
（2）The reaction speed for improving Hall sensor, reduces the response time of Hall sensor；
（3）The bias voltage of Hall sensor is adjusted flexibly；
（4）It is simple in structure, significantly chip area can be saved, cost is reduced.
Claims (2)
1. a kind of system providing bias voltage for Hall sensor comprising Hall sensor, which is characterized in that the Hall
Sensor includes voltage bias Hall sensor and current offset Hall sensor, the current offset Hall sensor and described
The ends B of voltage bias Hall sensor are grounded, the ends T of current offset Hall sensor connection current source one end and linear
The input terminal of voltage-stablizer, the current source other end connect power vd D, and the output end of the linear voltage regulator connects the voltage
The voltage difference at the ends T of biasing Hall sensor, the ends voltage bias Hall sensor L and the ends R is output voltage VH.
2. a kind of method providing bias voltage for Hall sensor, which is characterized in that by the ends T of current offset Hall sensor
Power vd D is connected by current source, the ends T of current offset Hall sensor and the ends T of voltage bias Hall sensor pass through line
Property sensor be connected, the ends L of voltage bias Hall sensor and the voltage difference at the ends R are output voltage VH, and VH=S*Vb*B ... is 1.
Wherein, S is the sensitivity of voltage bias Hall sensor, and B is induced field size,
Vb=I*R1*G/R2……②
Wherein, I is the current value of current source, and R1 is the internal resistance of current offset Hall sensor, and R2 is voltage bias hall sensing
The internal resistance of device, G are the amplification factor of linear voltage regulator, and current offset Hall sensor and voltage bias Hall sensor are in chip
It is internally integrated, puts together, therefore R1=R2；
2. formula is brought into formula 1. obtain VH=S*B*I*G, S, I, G are fixed value, and VH follows induced field B linear changes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810208622.1A CN108318058A (en) | 2018-03-14 | 2018-03-14 | A kind of system and method providing bias voltage for Hall sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810208622.1A CN108318058A (en) | 2018-03-14 | 2018-03-14 | A kind of system and method providing bias voltage for Hall sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108318058A true CN108318058A (en) | 2018-07-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810208622.1A Pending CN108318058A (en) | 2018-03-14 | 2018-03-14 | A kind of system and method providing bias voltage for Hall sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112986645A (en) * | 2021-01-27 | 2021-06-18 | 力高(山东)新能源技术有限公司 | Method for eliminating current error caused by Hall power supply voltage |
Citations (10)
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|---|---|---|---|---|
| GB2098340A (en) * | 1981-05-08 | 1982-11-17 | Gen Electric Plc | Hall effect devices |
| CN1167251A (en) * | 1996-03-02 | 1997-12-10 | 德国Itt工业股份有限公司 | Single chip integrated sensor circuit |
| US6720761B1 (en) * | 2000-01-25 | 2004-04-13 | Sharp Kabushiki Kaisha | Hall device biasing circuit and magnetism detection circuit including the same |
| CN101290233A (en) * | 2007-04-19 | 2008-10-22 | 上海钜胜微电子有限公司 | Hall effect circuit temperature compensation method and its circuit |
| CN202077004U (en) * | 2011-04-22 | 2011-12-14 | 灿瑞半导体(上海)有限公司 | Hall switch temperature compensation circuit based on CMOS (complementary metal-oxide-semiconductor transistor) technology |
| JP2015018313A (en) * | 2013-07-09 | 2015-01-29 | 旭化成エレクトロニクス株式会社 | Hall element driving circuit |
| CN106537276A (en) * | 2016-08-16 | 2017-03-22 | 深圳市汇顶科技股份有限公司 | Linear regulator |
| CN106716149A (en) * | 2014-09-26 | 2017-05-24 | 旭化成微电子株式会社 | Hall electromotive force signal detection circuit and current sensor |
| US20170363693A1 (en) * | 2016-06-17 | 2017-12-21 | Texas Instruments Incorporated | High bandwidth hall sensor |
| CN208012623U (en) * | 2018-03-14 | 2018-10-26 | 无锡思泰迪半导体有限公司 | A kind of system providing bias voltage for Hall sensor |
-
2018
- 2018-03-14 CN CN201810208622.1A patent/CN108318058A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2098340A (en) * | 1981-05-08 | 1982-11-17 | Gen Electric Plc | Hall effect devices |
| CN1167251A (en) * | 1996-03-02 | 1997-12-10 | 德国Itt工业股份有限公司 | Single chip integrated sensor circuit |
| US6720761B1 (en) * | 2000-01-25 | 2004-04-13 | Sharp Kabushiki Kaisha | Hall device biasing circuit and magnetism detection circuit including the same |
| CN101290233A (en) * | 2007-04-19 | 2008-10-22 | 上海钜胜微电子有限公司 | Hall effect circuit temperature compensation method and its circuit |
| CN202077004U (en) * | 2011-04-22 | 2011-12-14 | 灿瑞半导体(上海)有限公司 | Hall switch temperature compensation circuit based on CMOS (complementary metal-oxide-semiconductor transistor) technology |
| JP2015018313A (en) * | 2013-07-09 | 2015-01-29 | 旭化成エレクトロニクス株式会社 | Hall element driving circuit |
| CN106716149A (en) * | 2014-09-26 | 2017-05-24 | 旭化成微电子株式会社 | Hall electromotive force signal detection circuit and current sensor |
| US20170363693A1 (en) * | 2016-06-17 | 2017-12-21 | Texas Instruments Incorporated | High bandwidth hall sensor |
| CN106537276A (en) * | 2016-08-16 | 2017-03-22 | 深圳市汇顶科技股份有限公司 | Linear regulator |
| CN208012623U (en) * | 2018-03-14 | 2018-10-26 | 无锡思泰迪半导体有限公司 | A kind of system providing bias voltage for Hall sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112986645A (en) * | 2021-01-27 | 2021-06-18 | 力高(山东)新能源技术有限公司 | Method for eliminating current error caused by Hall power supply voltage |
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Effective date of registration: 20221219 Address after: No. 295, Building 17, No. 2723, Fuchunwan Avenue, Chunjiang Street, Fuyang District, Hangzhou, Zhejiang, 310000 Applicant after: Hangzhou Sitai Microelectronics Co.,Ltd. Address before: 214028 No.16 Changjiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant before: STEADICHIPS Inc. |