CN108306534A - A kind of Modular multilevel converter and its submodule topological structure - Google Patents

A kind of Modular multilevel converter and its submodule topological structure Download PDF

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CN108306534A
CN108306534A CN201810104441.4A CN201810104441A CN108306534A CN 108306534 A CN108306534 A CN 108306534A CN 201810104441 A CN201810104441 A CN 201810104441A CN 108306534 A CN108306534 A CN 108306534A
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diodes
collector
cathode
sic
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CN108306534B (en
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徐晨
林磊
胡凯
何佳璐
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • H02M1/007—Plural converter units in cascade
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention discloses a kind of Modular multilevel converter and its submodule topological structures, including left and right half-bridge, connect circuit, wherein, left half-bridge includes T1, T2, D1, D2, M1, DM1 and C1, and T1, T2, M1 are respectively with D1, D2, DM1 inverse parallel, and M1 is connected in series to the capacitor and capacitance cathode connection M1 drain electrodes, T1 collectors connect M1 source electrodes, and T2 emitters connect capacitance cathode.Right half-bridge includes T3, T4, D3, D4, DM2, M2, C2, T3 and T4, and M2 is respectively with D1, D2, DM2 inverse parallel, and M2 is connected in series to the capacitor and capacitance cathode connection M2 drain electrodes, T3 collectors connect M2 source electrodes, and T4 emitters are connected with capacitance cathode.Left half-bridge is connected with right half-bridge by connecting circuit.The topological structure of the present invention has the ability for actively exporting four kinds of level, and the MMC systems based on the topological structure may be implemented DC Line Fault and pass through and pressure-raising operation.

Description

A kind of Modular multilevel converter and its submodule topological structure
Technical field
The invention belongs to modular multi-level converter topological structure fields, and SiC is based on more particularly, to one kind MOSFET and Si IGBT have the novel modularized multi-level converter of high efficiency of output negative level and DC Line Fault ride-through capability And its submodule topological structure.
Background technology
HVDC transmission system (Voltage Source Converter High based on voltage source converter Voltage Direct Current, VSC-HVDC) compared to traditional based on line commutation transverter D.C. high voltage transmission skill Have for art (Line Commutated Converter High Voltage Direct Current, LCC-HVDC) more Kind advantage, such as：Transverter active and reactive power can be with independent control；AC transmission system damps and stability improves, and can be used as Black starting-up power supply, harmonic wave of output voltage content is less, filter volume smaller.Modularization multi-level converter (Modular Multilevel Converter, MMC) compared to two traditional level, three-level converter for, have switching loss it is low, The advantages that modularized design, harmonic wave of output voltage content is small, and level is easy to extension.Therefore, MMC has become flexible DC power transmission Preferred topology.
Traditional MMC sub-modular structures have following three kinds：Half-bridge submodule (Half Bridge Sub-Module, HBSM), full-bridge submodule (Full Bridge Sub-Module, FBSM), clamp Shuangzi module (Clamp Double Sub- Module, CDSM).HBSM has simple in structure, cost, the low advantage of loss.But the MMC-HVDC based on HBSM itself is not With DC Line Fault ride-through capability.It, can not be by being latched transverter master when short circuit or earth fault occur for system dc side It is dynamic to inhibit fault current.MMC transverters based on FBSM have negative level fan-out capability, can be with active suppression DC Line Fault.But Its is of high cost, and loss is big.CDSM may be implemented DC Line Fault and pass through, and its cost and loss ratio FBSM are low.But the submodule is not Negative level can be actively exported, pressure-raising operation is can not achieve.In brief, common submodule topological structure HBSM, FBSM and CDSM can not take into account efficiency, DC Line Fault ride-through capability and negative level fan-out capability.
Existing novel sub-modular structure --- half-bridge is connected submodule (Half and Full with full-bridge mixed type Bridge Sub-Module, H＆FB SM), half full-bridge submodule (Semi Full Bridge Sub-Module, SFB SM) though Efficiency, DC Line Fault ride-through capability, negative level fan-out capability is so realized to take into account, but due to Si IGBT and Si The limitation of Diode, efficiency are still not ideal enough.
Electronic power switch device --- silicone carbide metal oxide based on silicon carbide (Silicon Carbide, SiC) Semiconductor field (Silicon Carbide Power Metal Oxide Semiconductor Field Effect Transistor, SiC MOSFET) just rapidly developed, it will be expected to be applied to 3.3KV to 6.5KV voltages within 10 years futures The application scenario of grade.SiC MOSFET are compared to electronic power switch device --- the insulated gate bipolar transistor based on silicon Have conducting resistance low for (Silicon Insulated Gate Bipolar Transistor, Si IGBT), switch speed The advantage that degree is fast and hot properties is excellent so that the further promotion of submodule efficiency becomes possibility, but its cost is higher, Cannot simply it be applied in existing topological structure.
To sum up, the existing submodule loss based on Si switching devices is higher, and SiC switching devices are rationally utilized there is an urgent need for a kind of Novel efficient submodule topological structure.
Invention content
For the disadvantages described above or Improvement requirement of the prior art, the present invention provides a kind of Modular multilevel converter and Thus its submodule topological structure solves the existing submodule based on Si switching devices and higher technical problem is lost.
To achieve the above object, according to one aspect of the present invention, a kind of son of Modular multilevel converter is provided Module topology structure, including：Left half-bridge module, right half-bridge module and connection circuit；
Wherein, the left half-bridge module includes：First Si IGBT, the 2nd Si IGBT, the first Si diodes, the 2nd Si bis- Pole pipe, the first SiC MOSFET, the first SiC diodes and the first capacitance；The right half-bridge module includes：3rd Si IGBT, 4th Si IGBT, the 3rd Si diodes, the 4th Si diodes, the 2nd SiC diodes, the electricity of the 2nd SiC MOSFET and second Hold；The connection circuit includes：5th Si IGBT, the 6th Si IGBT, the 7th Si IGBT, the 5th Si diodes, the 6th Si bis- Pole pipe and the 7th Si diodes；
The current collection of the emitter of the first Si IGBT and positive, described 2nd SiIGBT of the first Si diodes The cathode of pole and the 2nd Si diodes connects；The collector of the first Si IGBT and the first Si diodes The anode connection of cathode, the source electrode of the first SiC MOSFET and the first SiC diodes；The 2nd Si IGBT Emitter connect with the cathode of positive and described first capacitance of the 2nd Si diodes；The anode of first capacitance It is connect with the cathode of the drain electrode of the first SiC MOSFET and the first SiC diodes；
The current collection of the emitter of the 3rd Si IGBT and positive, described 4th SiIGBT of the 3rd Si diodes The cathode of pole and the 4th Si diodes connects；The collector of the 3rd Si IGBT and the 3rd Si diodes The anode connection of cathode, the source electrode of the 2nd SiC MOSFET and the 2nd SiC diodes；The 4th Si IGBT Emitter connect with the cathode of positive and described second capacitance of the 4th Si diodes；The anode of second capacitance It is connect with the cathode of the drain electrode of the 2nd SiC MOSFET and the 2nd SiC diodes；
The transmitting of the collector of the 5th Si IGBT and the cathode, the 6th SiIGBT of the 5th Si diodes The anode connection of pole and the 6th Si diodes；The emitter of the 5th Si IGBT and the 5th Si diodes The collector of positive, the described 7th Si IGBT, the emitter of the 2nd Si IGBT and the 7th Si diodes it is negative Pole connects；The hair of the emitter of the 7th Si IGBT and the positive and described 4th Si IGBT of the 7th Si diodes Emitter-base bandgap grading connects；The collector of the 6th Si IGBT and the cathode of the 6th Si diodes, the collection of the first Si IGBT The collector of electrode and the 3rd Si IGBT connect.
Preferably, the tie point of the emitter of the first Si IGBT and the collector of the 2nd Si IGBT is just defeated Outlet P.
Preferably, the tie point of the emitter of the 3rd Si IGBT and the collector of the 4th Si IGBT is negative defeated Outlet N.
Preferably, the output of the submodule topological structure is four kinds of+2Uc ,+Uc, 0 ,-Uc level, wherein Uc is described The capacitance voltage of submodule topological structure.
It is another aspect of this invention to provide that providing a kind of submodule topological structure based on described in above-mentioned any one Modular multilevel converter.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show Beneficial effect：
(1) topological structure has active output+2Uc ,+Uc, 0, the abilities of four kinds of level of-Uc, is based on the topological structure MMC systems may be implemented DC Line Fault pass through and pressure-raising operation.
(2) topological structure is by the SiC MOSFET of capacitive branch, may be implemented submodule output level be+Uc ,- When Uc and 0, the electric current by making to flow through partial switch pipe is that the half of bridge arm current makes the conduction loss of the topological structure big Width reduces.
(3) conduction loss can not only be reduced by being halved by the electric current that switching tube flows through, while can reduce its switching loss. Simultaneously because the switching speed ratio Si IGBT of SiC MOSFET are fast, therefore, switching transients process can be shortened, to substantially drop The switching loss of the low topology.
Description of the drawings
Fig. 1 is a kind of MMC topological structures schematic diagram provided in an embodiment of the present invention；
Fig. 2 is a kind of CS-SFB SM topology diagrams provided in an embodiment of the present invention；
Fig. 3 is a kind of H＆FB SM topology diagrams provided in an embodiment of the present invention；
The current path schematic diagram of CS-SFB SM when Fig. 4 is a kind of normal work provided in an embodiment of the present invention, wherein Fig. 4 (a) is that output level is positive 2 times of submodule capacitor voltages and the current path figure that bridge arm current is timing, and Fig. 4 (b) is defeated Go out the current path figure that level is syndrome generation module capacitance voltage and bridge arm current is timing, Fig. 4 (c) is that output level is 0 and bridge Arm electric current is the current path figure of timing, and Fig. 4 (d) is that output level is negative submodule capacitor voltage and bridge arm current is timing Current path figure, Fig. 4 (e) are current path figure when output level is positive 2 times of submodule capacitor voltages and bridge arm current is negative, Fig. 4 (f) is current path figure when output level is syndrome generation module capacitance voltage and bridge arm current is negative, and Fig. 4 (g) is output electricity Put down for 0 and bridge arm current be negative when current path figure, Fig. 4 (h) be that output level is negative submodule capacitor voltage and bridge arm is electric Current path figure when stream is negative.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below It does not constitute a conflict with each other and can be combined with each other.
It is illustrated in figure 2 a kind of submodule topological structure of Modular multilevel converter provided in an embodiment of the present invention, Including：Left half-bridge module, right half-bridge module and connection circuit；
Wherein, left half-bridge module includes：First Si IGBT T1, the 2nd Si IGBT T2, the first Si diodes D1, second Si diodes D2, the first SiC MOSFET M1, the first SiC diodes DM1 and the first capacitance C1；
Wherein, the anode of the emitter of the first Si IGBT and the first Si diodes, the 2nd Si IGBT collector and The cathode of 2nd Si diodes connects；The collector of first Si IGBT and cathode, the first SiC MOSFET of the first Si diodes Source electrode and the first SiC diodes anode connection；The emitter of 2nd Si IGBT and the anode of the 2nd Si diodes and The cathode of first capacitance connects；The drain electrode of anode and the first SiC MOSFET and bearing for the first SiC diodes of first capacitance Pole connects；The tie point of the emitter of first Si IGBT and the collector of the 2nd Si IGBT is positive output end P.
Wherein, right half-bridge module includes：3rd Si IGBT T3, the 4th Si IGBT T4, the 3rd Si diodes D3, the 4th Si diodes D4, the 2nd SiC diodes DM2, the 2nd SiC MOSFETM2 and the second capacitance C2；
Wherein, the anode of the emitter of the 3rd Si IGBT and the 3rd Si diodes, the 4th Si IGBT collector and The cathode of 4th Si diodes connects；The collector of 3rd Si IGBT and cathode, the 2nd SiC MOSFET of the 3rd Si diodes Source electrode and the 2nd SiC diodes anode connection；The emitter of 4th Si IGBT and the anode of the 4th Si diodes and The cathode of second capacitance connects；The drain electrode of anode and the 2nd SiC MOSFET and bearing for the 2nd SiC diodes of second capacitance Pole connects；The tie point of the emitter of 3rd Si IGBT and the collector of the 4th Si IGBT is negative output terminal N.
Wherein, connection circuit includes：5th Si IGBT T5, the 6th Si IGBT T6, the 7th Si IGBT T7, the 5th Si Diode D5, the 6th Si diodes D6 and the 7th Si diodes D7；
Wherein, the cathode of the collector of the 5th Si IGBT and the 5th Si diodes, the 6th Si IGBT emitter and The anode connection of 6th Si diodes；The emitter of 5th Si IGBT and the anode of the 5th Si diodes, the 7th Si IGBT The cathode of collector, the emitter of the 2nd Si IGBT and the 7th Si diodes connects；The emitter of 7th Si IGBT and The emitter connection of the anode and the 4th Si IGBT of seven Si diodes；The collector and the 6th Si diodes of 6th Si IGBT Cathode, the first Si IGBT collector and the 3rd Si IGBT collector connection.
As shown in Figure 1, the present invention also provides a kind of moulds based on the submodule topological structure described in above-mentioned any one The structure of block multi-level converter, each submodule in Fig. 1 is identical.
In order to express easily, the submodule topological structure of Modular multilevel converter provided by the invention is described as electricity Hold half full-bridge submodule of switching mode (Capacitor Switching Semi Full-Bridge, CS-SFB SM).
CS-FB SM can export four kinds of+2Uc ,+Uc, 0 ,-Uc level, wherein Uc is half full-bridge submodule of capacitance switch type Block capacitance voltage.Its operation principle is described in detail with reference to Fig. 4：
1, bridge arm current is just：
1) when port output voltage is+2UCWhen, shown in current path such as Fig. 4 (a) of CS-FB SM, D1, DM1, D5, DM2, D4 are in the conduction state, and it is bridge arm current to flow through their electric current.
2) when port output voltage is+UCWhen, shown in current path such as Fig. 4 (b) of CS-FB SM, D1, DM1, T6, DM2, T7, T4 are in the conduction state, and the electric current for flowing through D1, D4 is bridge arm current, and the electric current for flowing through T6, T7, DM1, DM2 is bridge arm current Half.
3) when port output voltage is 0, shown in current path such as Fig. 4 (c) of CS-FB SM, D1, T6, T3, T2, T7, D4 is in the conduction state, flows through the half that their electric current is bridge arm current.
4) when port output voltage is-UCWhen, shown in current path such as Fig. 4 (d) of CS-FB SM, T2, T7, M2, T3, M1, T6 are in the conduction state, and the electric current for flowing through T2, T3 is bridge arm current, and the electric current for flowing through T7, M2, M1, T6 is bridge arm current Half.
2, bridge arm current is negative：
1) when port output voltage is+2UCWhen, shown in current path such as Fig. 4 (e) of CS-FB SM, T1, M1, T5, M2, T4 is in the conduction state, and it is bridge arm current to flow through their electric current.
2) when port output voltage is+UCWhen, shown in current path such as Fig. 4 (f) of CS-FB SM, T1, M1, T7, T4, T6, M2, in the conduction state, the electric current for flowing through T1, T4 is bridge arm current, and the electric current for flowing through M1, T7, T6, M2 is bridge arm current Half.
3) when port output voltage is 0, shown in current path such as Fig. 4 (g) of CS-FB SM, T1, D6, D3, D2, D7, T4 is connected, and flows through the half that their electric current is bridge arm current.
4) when port output voltage is-UCWhen, shown in current path such as Fig. 4 (h) of CS-FB SM, D2, D7, DM2, D3, DM1, D6 are in the conduction state, and the electric current for flowing through D2, D3 is bridge arm current, and the electric current for flowing through D7, DM2, DM1, D6 is bridge arm electricity The half of stream.
It clearer can understand that the drop of CS-SFB SM damages principle below in conjunction with concrete analysis：
1, parameter extraction
The terminal voltage of switching tube (Si MOSFET, Si Diode, SiC MOSFET, SiC Diode), switching loss with it is logical Relationship between state electric current can be fitted with first order linear function, be expressed as：
UF=UT0+rT·iF
E=k1+k2iF
Wherein, UFFor switching tube terminal voltage, UT0For switching tube forward conduction voltage drop, rTFor switching tube on-state equivalent resistance, iF To flow through the electric current of switching tube, E can be the turn-on consumption or turn-off power loss of switching tube, k1And k2It is related with switching tube characteristic Parameter can be obtained by handbook data linear fit.Remember SiIGBT, Si Diode, SiC MOSFET, the positive guides of SiC Diode Logical pressure drop is respectively UT0_IT、UT0_ID、UT0_MT、UT0_MD；Forward conduction resistance is respectively rT0_IT、rT0_ID、rT0_MT、rT0_MD。
2, conduction loss
In order to make it easy to understand, Fig. 4, which is analyzed and summarized, can obtain CS-SFB SM switching tubes leading under different operating modes Disconnected situation, as shown in table 1 below.
Table 1
It can be obtained in conjunction with table 1 and Fig. 4 (d), when bridge arm current is+i, submodule output voltage is+UCWhen, stream The half (it is bridge arm current to flow through rest switch tube current) that DM1, DM2 electric current in CS-SFB SM are only bridge arm current is crossed, by scheming 3 it is found that it is bridge arm current to flow through all switch tube currents of H＆FB SM, and H＆FB SM and CS-SFB SM conduction losses are as follows：
Wherein, PON_H&FBFor the conduction loss power of H＆FB SM at this time, PON_CS-SFBFor CS-SFBSM conduction loss power, I is bridge arm current.The U known to the characteristic of SiC MOSFET and SiC DiodeT0_MT＜ UT0_IT, rT0_MT＜ rT0_IT, therefore PON_CS-SFB Significantly lower than PON_H&FB。
When bridge arm current is+i, and submodule output voltage is 0, flow through D1, D4 in CS-SFB SM, T2, T3, T6, T7 electric currents are only the half (it is bridge arm current to flow through rest switch tube current) of bridge arm current, flow through all switching tubes of H＆FB SM Electric current is bridge arm current, and H＆FB SM and CS-SFB SM conduction losses are as follows：
It can be seen that PON_CS-SFBSignificantly lower than PON_H&FB。
The conduction loss situation of two seed modules when can similarly obtain other operating modes.To sum up, when submodule output voltage be ± UCWhen CS-SFB SM pass through C1, C2 shunting and reduced using normal state conduction voltage drop, the lower SiC device of on-state equivalent resistance Conduction loss；When submodule output voltage is 0, CS-SFB SM reduce conduction loss by the shunting of upper and lower branch.
3, switching loss
CS-SFB SM can be obtained not by comparing the break-make situation of CS-SFB SM switching tubes under different operating modes in table 1 With the switching characteristic of switching tube when switching under operating mode, arrangement can obtain table 2.It is switched in conjunction with table 2 and SiC MOSFET, SiC Diode Fireballing characteristic is easy to get：CS-SFB SM not only make partial switch pipe current change quantity before and after specific operation lower switch The half of bridge arm current, the quick recovery characteristics of SiC Diode are reduced into, therefore significantly reduce switching loss.
Table 2
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to The limitation present invention, all within the spirits and principles of the present invention made by all any modification, equivalent and improvement etc., should all include Within protection scope of the present invention.

Claims (5)

1. a kind of submodule topological structure of Modular multilevel converter, which is characterized in that including：Left half-bridge module, right half Bridge module and connection circuit；
Wherein, the left half-bridge module includes：First Si IGBT, the 2nd Si IGBT, the first Si diodes, bis- poles the 2nd Si Pipe, the first SiC MOSFET, the first SiC diodes and the first capacitance；The right half-bridge module includes：3rd Si IGBT, Four Si IGBT, the 3rd Si diodes, the 4th Si diodes, the 2nd SiC diodes, the 2nd SiC MOSFET and the second capacitance； The connection circuit includes：5th Si IGBT, the 6th Si IGBT, the 7th Si IGBT, the 5th Si diodes, bis- poles the 6th Si Pipe and the 7th Si diodes；
The collector of the emitter of the first Si IGBT and positive, the described 2nd Si IGBT of the first Si diodes with And the cathode connection of the 2nd Si diodes；The collector of the first Si IGBT and the cathode of the first Si diodes, The anode connection of the source electrode and the first SiC diodes of the first SiC MOSFET；The transmitting of the 2nd Si IGBT Pole is connect with the cathode of positive and described first capacitance of the 2nd Si diodes；First capacitance anode with it is described The cathode of the drain electrode of first SiC MOSFET and the first SiC diodes connects；
The collector of the emitter of the 3rd Si IGBT and positive, the described 4th Si IGBT of the 3rd Si diodes with And the cathode connection of the 4th Si diodes；The collector of the 3rd Si IGBT and the cathode of the 3rd Si diodes, The anode connection of the source electrode and the 2nd SiC diodes of the 2nd SiC MOSFET；The transmitting of the 4th Si IGBT Pole is connect with the cathode of positive and described second capacitance of the 4th Si diodes；Second capacitance anode with it is described The cathode of the drain electrode of 2nd SiC MOSFET and the 2nd SiC diodes connects；
The collector of the 5th Si IGBT and the cathode of the 5th Si diodes, the 6th Si IGBT emitter with And the anode connection of the 6th Si diodes；The emitter of the 5th Si IGBT and the anode of the 5th Si diodes, The cathode of the collector of the 7th Si IGBT, the emitter of the 2nd Si IGBT and the 7th Si diodes connects It connects；The emitter of the emitter of the 7th Si IGBT and the positive and described 4th Si IGBT of the 7th Si diodes Connection；The collector of the 6th Si IGBT and the cathode of the 6th Si diodes, the collector of the first Si IGBT And the collector connection of the 3rd Si IGBT.
2. submodule topological structure according to claim 1, which is characterized in that the emitter of the first Si IGBT with The tie point of the collector of the 2nd Si IGBT is positive output end P.
3. submodule topological structure according to claim 1, which is characterized in that the emitter of the 3rd Si IGBT with The tie point of the collector of the 4th Si IGBT is negative output terminal N.
4. the submodule topological structure according to claims 1 to 3 any one, which is characterized in that the submodule topology The output of structure is four kinds of+2Uc ,+Uc, 0 ,-Uc level, wherein Uc is the capacitance voltage of the submodule topological structure.
5. a kind of Modular multilevel converter based on the submodule topological structure described in Claims 1-4 any one.
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Cited By (5)

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CN109039128A (en) * 2018-08-07 2018-12-18 南京航空航天大学 MMC submodule topological structure based on clamp and energy transfer circuits
CN109861512A (en) * 2019-03-08 2019-06-07 西安交通大学 A kind of clamper Shuangzi module with DC Line Fault self-cleaning ability
CN110247566A (en) * 2019-07-05 2019-09-17 沈阳工业大学 A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method
CN111693755A (en) * 2020-05-21 2020-09-22 西安交通大学 Voltage detection circuit for high-voltage SiC MOSFET
CN114221318A (en) * 2021-12-20 2022-03-22 华北电力大学 MMC sub-module circuit topology structure, fault ride-through method and application thereof

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