CN108306501A - A kind of MMC submodules with DC Line Fault blocking ability - Google Patents

A kind of MMC submodules with DC Line Fault blocking ability Download PDF

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Publication number
CN108306501A
CN108306501A CN201810045263.2A CN201810045263A CN108306501A CN 108306501 A CN108306501 A CN 108306501A CN 201810045263 A CN201810045263 A CN 201810045263A CN 108306501 A CN108306501 A CN 108306501A
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China
Prior art keywords
electronic switch
capacitance
diode
mmc submodules
mmc
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CN201810045263.2A
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Chinese (zh)
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CN108306501B (en
Inventor
庞玉彬
霍群海
郭心铭
尹靖元
朱晋
陆翌
许烽
韦统振
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Institute of Electrical Engineering of CAS
State Grid Zhejiang Electric Power Co Ltd
Electric Power Research Institute of State Grid Zhejiang Electric Power Co Ltd
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Institute of Electrical Engineering of CAS
State Grid Zhejiang Electric Power Co Ltd
Electric Power Research Institute of State Grid Zhejiang Electric Power Co Ltd
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Priority to CN201810045263.2A priority Critical patent/CN108306501B/en
Publication of CN108306501A publication Critical patent/CN108306501A/en
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/26Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occured
    • H02H7/268Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occured for dc systems
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00Circuit arrangements for ac mains or ac distribution networks
    • H02J3/36Arrangements for transfer of electric power between ac networks via a high-tension dc link
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0067Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/60Arrangements for transfer of electric power between AC networks or generators via a high voltage DC link [HVCD]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

A kind of MMC submodules with DC Line Fault blocking ability, are made of power electronic devices and capacitance.The series-parallel connection bridge arm of multiple MMC submodules composition constitutes the transverter of flexible DC power transmission, and when normal operation can realize rectification or inversion function.When there is DC bus short trouble in Converter DC-side, pass through latch power electronic switch, capacitance is reversely sealed in by clamp diode and realizes DC bus fault isolation, is improved based on clamp Shuangzi unit module flexible DC power transmission dc-side short-circuit reverse current trouble isolation serviceability.

Description

A kind of MMC submodules with DC Line Fault blocking ability
Technical field
The present invention relates to a kind of MMC submodules with DC Line Fault blocking ability.
Background technology
Flexible DC transmission technology is solving now as a kind of New type of transmission compared with conventional AC power transmission mode There is unique advantage in the problems that power grid faces, there is good development prospect.And modularization multi-level converter (modular multilevel converter, MMC) is to be easy to the modular construction encapsulated, good scalability and exchange Harmonic wave of output voltage performance, lower switching frequency and the advantages that loss, have been subjected to worldwide approval.Suitable for straight The DC fault of galvanic electricity net becomes one of the key technology of development DC grid, however is suitable for the guarantor of DC grid at present Shield principle still has many key technologies to need to be broken through, and main technological difficulties include precisely identifying and quickly isolate for failure.Mesh Although preceding widely used semi-bridge type modularization multi-level converter have it is simple in structure, number of devices is few, and low advantage is lost, But it cannot quickly isolate dc-side short-circuit fault function, and since DC current does not have zero crossing, common exchange disconnected Road device can not be disconnected due to being difficult to arc extinguishing.If direct fault current is using traditional protections modes such as disconnection exchange side breakers Cut-out, it will cause system recovery time long, seriously affected the reliability of whole system.
In order to remove DC side failure, it is a kind of effectively removing to block fault current using the design feature of transverter itself The approach of failure, this method block failure electric by improving the pulse-triggered strategy of transverter topological structure itself and device Stream, need not disconnect AC circuit breaker, and can quickly remove failure makes system resume operation, while be influenced on AC system It is smaller, it is very suitable for the high overhead line circuit of transient fault rate.Clamper Shuangzi module (the clamp double that foreign scholar proposes Sub-module, CDSM), can not only isolated DC side failure, and in economy, performance have stronger advantage.But specially Sharp barrier causes the large-scale engineering applications in China to be restricted;Shuangzi mould two capacitances in the block are clamped in negative direction simultaneously Equivalent parallel when fault current differs greatly with two capacitor equivalents concatenated situation blocking ability when positive direction fault current; And complexity of two capacitances there are parallel coupled to increase control and press.
Invention content
The purpose of the present invention is overcoming the limitation of prior art barrier, propose a kind of with DC Line Fault blocking ability The capacitor-clamped type Shuangzi module of MMC submodule-tri- (Three capacitor Clamping Double Sub-Module, TCDSM).Submodule capacitance is sealed in faulty circuit by the present invention, using the backward voltage disengagement failure electric current of capacitance, to play The effect of DC bus fault isolation, the present invention, which also has, when instantaneity DC bus short trouble makes needed for system resumes operation Time short advantage.
The present invention has the MMC submodules of DC Line Fault blocking ability by electronic switch T1, T2, T3, T4, T5, T6, two poles Pipe D1, D2, D3, D4, D5, D6, D7, D8 and capacitance C1, C2, C3 composition.The first output end and the first electronic cutting of MMC submodules The collector of the emitter, the second electronic switch T2 that close T1 is connected in the first tie point;The collector of first electronic switch T1 with The anode of first capacitance C1, the cathode of the 7th diode D7 are connected in the second tie point;The anode of 7th diode D7, the 6th electricity The collector of the emitter of sub switch T6, the cathode of the 8th diode D8 and the 5th electronic switch T5 is connected in third tie point; The collector of the collector of 6th electronic switch T6, the anode of the second capacitance C2 and third electronic switch T3 is in the 4th tie point phase Even;The anode of 8th diode D8, the cathode of the second capacitance C2 are connected with the anode of third capacitance C3 in the 5th tie point;Third The emitter of electronic switch T3, the collector of the 4th electronic switch T4 and MMC submodules second output terminal are in the 6th tie point phase Even;The emitter of second electronic switch T2, the cathode of the first capacitance C1, the 5th electronic switch T5 emitter in the 7th tie point It is connected;The cathode of third capacitance C3, the emitter of the 4th electronic switch T4 are connected in the 8th tie point;First electronic switch T1 with First diode D1 is in parallel, and the second electronic switch T2 is in parallel with the second diode D2, third electronic switch T3 and third diode D3 is in parallel, and the 4th electronic switch T4 is in parallel with the 4th diode D4, the collector of the electronic switch of all parallel connections and diode Anode connects, and the emitter of electronic switch of all parallel connections is connected with the cathode of diode.
When transverter is in normal operating conditions, it is assumed that each submodule output voltage is set as 2Uc, wherein the first capacitance Voltage on C1 is set as Uc, the voltage of the second capacitance C2 and third capacitance C3 is set as Uc/2.The submodule output voltage USM When=0, the second electronic switch T2, third electronic switch T3, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the first electricity Sub switch T1, the 4th electronic switch T4 shutdowns, and current direction is positive ISM>When 0, the first capacitance C1, the second capacitance C2, third electricity Hold C3 to be bypassed, current flow paths are the second diodes of diode D5 → the 6th of electronic switch T2 → the 5th D6 → third electronics Switch T3;The submodule output voltage USMWhen=0, the second electronic switch T2, third electronic switch T3, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the first electronic switch T1, the 4th electronic switch T4 shutdowns, and current direction is negative ISM<When 0, First capacitance C1, the second capacitance C2, third capacitance C3 are bypassed, and current flow paths are the third diode electronic cuttings of D3 → the 6th Close the diodes of electronic switch T5 → second of T6 → the 5th D2.As submodule output voltage USM=UcWhen, the first electronic switch T1, Three electronic switch T3, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the second electronic switch T2, the 4th electronic switch T4 When shutdown, and current direction is timing, and the second capacitance C2, third capacitance C3 are bypassed, the first capacitance C1 chargings, current flowing road Diameter is the first diodes of diode D5 → the 6th of diode D1 → the 5th D6 → third electronic switch T3;When submodule output voltage USM=UcWhen, the first electronic switch T1, third electronic switch T3, the 5th electronic switch T5, the 6th electronic switch T6 conductings, second When electronic switch T2, the 4th electronic switch T4 shutdowns, and current direction is when bearing, and the second capacitance C2, third capacitance C3 are bypassed, First capacitance C1 electric discharges, current flow paths are third diode D3 → five electronic switch T5 → the of the 6th electronic switch T6 → the One electronic switch T1.Submodule output voltage USM=UcWhen, the second electronic switch T2, the 4th electronic switch T4, the 5th electronic cutting T5, the 6th electronic switch T6 conductings, the first electronic switch T1, third electronic switch T3 are closed, and current direction is timing, the first electricity Hold C1 electric currents to be bypassed, the second capacitance C2, the C3 chargings of third capacitance, current flow paths are the second electronic switch T2 → the five or two The diode D6 → the 4th of pole pipe D5 → the 6th diode D4;Submodule output voltage USM=UcWhen, the second electronic switch T2, the 4th Electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the first electronic switch T1, third electronic switch T3, and When current direction is negative, the first capacitance C1 electric currents are bypassed, the second capacitance C2, the C3 electric discharges of third capacitance, and current flow paths are 4th diodes of electronic switch T5 → second of electronic switch T6 → the 5th of electronic switch T4 → the 6th D2.When submodule output voltage USM=2UcWhen, the first electronic switch T2, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the When two electronic switch T2, the T3 shutdowns of third electronic switch, and current direction is just the first capacitance C1, the second capacitance C2, third electricity Hold C3 chargings, current flow paths are the first diodes of diode D6 → the 4th of diode D5 → the 6th of diode D1 → the 5th D4;As submodule output voltage USM=2UcWhen, the first electronic switch T1, the 4th electronic switch T4, the 5th electronic switch T5, Six electronic switch T6 conductings, when the second electronic switch T2, third electronic switch T3 are turned off, and current direction is negative, the first capacitance C1, the second capacitance C2, the C3 electric discharges of third capacitance, current flow paths are six electronic switch T6 → the of the 4th electronic switch T4 → the Five electronic switches of electronic switch T5 → first T1.The output of 3 kinds of voltage when to realize normal work.
When DC bus short trouble occurs for Converter DC-side, fault current flows into the MMC submodules, the first electricity Sub switch T1, the second electronic switch T2, third electronic switch T3, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronics Switch T6 lockings, the first capacitance C1, the second capacitance C2, third capacitance C3 reversely seal in current loop, port voltage USM=2Uc, Current path be the first capacitances of diode D1 → first capacitances of diode D6 → second of diode D5 → the 6th of C1 → the 5th C2 → Third capacitance C3 → the 4th diode D4;When the fault current outflow MMC submodules, the first electronic switch T1, the Two electronic switch T2, third electronic switch T3, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 lockings, First capacitance C1, the second capacitance C2 reversely seal in current loop, port voltage USM=-1.5Uc, current path is third diode The capacitances of D3 → second capacitances of diode D7 → first diodes of C1 → second of diode D8 → the 7th of C2 → the 8th D2.From two kinds of events Barrier current pathway can be seen that when using three capacitor-clamped type Shuangzi module topology structures, in different fault current directions In the case of, capacitance can reversely be sealed in fault current circuit, the backward voltage to be formed resistance of connecting using bridge arm submodule capacitance Disconnected fault current, submodule on off state and output voltage USMAs shown in table 1.
1 submodule on off state of table and output voltage USM
The modularization that there is the present invention MMC submodules of DC Line Fault blocking ability may be constructed six bridge arm structure of three-phase is more Level converter (MMC), each phase bridge arm is all using MMC submodules;The upper bridge arm bottom end passes through reactor and exchange side Connection, lower bridge arm top is connect by reactor with exchange side;Upper bridge arm top access DC side anode, the access of lower bridge arm low side DC side cathode.
There is the present invention MMC submodules of DC Line Fault blocking ability can also constitute series-parallel connection bridge with half-bridge MMC submodules Arm, the modularization multi-level converter are six bridge arm structure of three-phase, and each phase bridge arm is by m MMC submodule and n half-bridge Module composition, wherein m >=3, n >=3, and all submodule capacitor voltage UcThe sum of be equal to transverter DC bus-bar voltage Udc, i.e., Uc(2m+n)=Udc
In series-parallel connection bridge arm, upper bridge arm can also be made of the MMC submodules, and lower bridge arm is conventional half bridge MMC submodules Block is constituted.Lower bridge arm can also be changed to be made of the MMC submodules, upper bridge arm is constituted for half-bridge MMC submodules.
The series-parallel connection bridge arm that there is the present invention MMC submodules of DC Line Fault blocking ability and half-bridge MMC submodules to constitute changes When flowing device normal work, there are the m MMC submodules, m >=3 in a bridge arm.Each submodule exports 3 kinds of voltages, there is n A half-bridge submodule, n >=3.Each submodule exports 2 kinds of voltages, and output voltage amplitude is combined as (2m+n) Uc;When transverter is straight Stream busbar breaks down, and when fault current flows out bridge arm, electronic switch is latched in all modules, does not have trouble isolation serviceability Capacitance is by bypass diode in half-bridge submodule, has in the MMC submodules of trouble isolation serviceability capacitance differential concatenation into failure Circuit;When fault current flows into bridge arm, all mould electronic switches in the block are latched, MMC submodules and half-bridge submodule electricity in the block Hold equal differential concatenation into fault loop, achievees the effect that block fault current.
Advantages of the present invention:
A. submodule capacitance is introduced into fault loop, it being capable of isolated DC side failure;
B. the hybrid connected structure proposed has stronger advantage in economy, performance;
C. built half-bridge MMC transverters easily transform the hybrid connected structure that the present invention applies as, to realize DC Line Fault Isolation;
D. more quickly removing failure makes system resume operation;
E. it is easier to be combined with flexible direct current power transmission system, is suitable for integrated design.
Description of the drawings
Tri- capacitor-clamped type Shuangzi module topologies of Fig. 1;
Fig. 2 flows through the electric current I of submoduleSM>Three capacitor-clamped type Shuangzi module failure current pathway schematic diagram when 0;
Fig. 3 flows through the electric current I of submoduleSM<Three capacitor-clamped type Shuangzi module failure current pathway schematic diagram when 0;
Fig. 4 series-parallel connections bridge arm-submodule forms half bridge arm hybrid connected structure schematic diagram with half-bridge submodule;
It is submodule that Fig. 5 series-parallel connections bridge arm-, which goes up bridge arm, and lower bridge arm is half-bridge structure schematic diagram;
Fig. 6 series-parallel connection bridge arms -- upper bridge arm is half-bridge, and lower bridge arm is sub-modular structure schematic diagram.
Specific implementation mode
Below in conjunction with the accompanying drawings and specific implementation mode the invention will be further described.
MMC submodules proposed by the present invention topology as shown in Figure 1, the MMC submodules by six electronic switch T1, T2, T3, T4, T5, T6, eight diodes D1, D2, D3, D4, D5, D6, D7, D8 and three capacitance C1, C2, C3 compositions.MMC The emitter of first output end of module and the first electronic switch T1, the second electronic switch T2 collector in the first tie point 1 It is connected;The anode of the collector of first electronic switch T1 and the first capacitance C1, the 7th diode D7 cathode in the second tie point 2 It is connected;The cathode and the 5th electronic cutting of the anode of 7th diode D7, the emitter of the 6th electronic switch T6, the 8th diode D8 The collector for closing T5 is connected in third tie point 3;The collector of 6th electronic switch T6, the anode of the second capacitance C2 and third electricity The collector of sub switch T3 is connected in the 4th tie point 4;The anode of 8th diode D8, the cathode of the second capacitance C2 and third electricity The anode for holding C3 is connected in the 5th tie point 5;The emitter of third electronic switch T3, the collector of the 4th electronic switch T4 and MMC submodules second output terminal is connected in the 6th tie point 6;The emitter of second electronic switch T2, the first capacitance C1 cathode, The emitter of 5th electronic switch T5 is connected in the 7th tie point 7;The transmitting of the cathode, the 4th electronic switch T4 of third capacitance C3 Pole is connected in the 8th tie point 8;First electronic switch T1 is in parallel with the first diode D1, the second electronic switch T2 and the two or two pole Pipe D2 is in parallel, and third electronic switch T3 is in parallel with third diode D3, and the 4th electronic switch T4 is in parallel with the 4th diode D4, institute The anode of the collector and diode that have electronic switch in parallel connects, the emitter and diode of the electronic switch of all parallel connections Cathode be connected.
When transverter is in normal operating conditions, it is assumed that each submodule output voltage is set as 2Uc, wherein the first capacitance Voltage on C1 is set as Uc, the voltage of the second capacitance C2 and third capacitance C3 is set as Uc/2.The submodule output voltage USM When=0, the second electronic switch T2, third electronic switch T3, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the first electricity Sub switch T1, the 4th electronic switch T4 shutdowns, and current direction is positive ISM>When 0, as shown in Fig. 2, the first capacitance C1, the second electricity Appearance C2, third capacitance C3 are bypassed, and current flow paths are the second diodes of diode D5 → the 6th of electronic switch T2 → the 5th D6 → third electronic switch T3;The submodule output voltage USMWhen=0, the second electronic switch T2, third electronic switch T3, Five electronic switch T5, the 6th electronic switch T6 conductings, the first electronic switch T1, the 4th electronic switch T4 shutdowns, and current direction To bear ISM<When 0, as shown in figure 3, the first capacitance C1, the second capacitance C2, third capacitance C3 are bypassed, current flow paths Three diodes of electronic switch T5 → second of electronic switch T6 → the 5th of diode D3 → the 6th D2.As submodule output voltage USM= UcWhen, the first electronic switch T1, third electronic switch T3, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the second electronics When switch T2, the 4th electronic switch T4 shutdowns, and current direction is timing, and the second capacitance C2, third capacitance C3 are bypassed, first Capacitance C1 chargings, current flow paths are the first diodes of diode D5 → the 6th of diode D1 → the 5th D6 → third electronic cutting Close T3;As submodule output voltage USM=UcWhen, the first electronic switch T1, third electronic switch T3, the 5th electronic switch T5, Six electronic switch T6 conductings, when the second electronic switch T2, the 4th electronic switch T4 are turned off, and current direction is the second electricity when bearing Appearance C2, third capacitance C3 are bypassed, and the first capacitance C1 electric discharges, current flow paths are the third diode electronic switches of D3 → the 6th The electronic switches of electronic switch T5 → first of T6 → the 5th T1.Submodule output voltage USM=UcWhen, the second electronic switch T2, the 4th Electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the first electronic switch T1, third electronic switch T3, and Current direction is timing, and the first capacitance C1 electric currents are bypassed, the second capacitance C2, the C3 chargings of third capacitance, and current flow paths are The second diode D6 → the 4th of diode D5 → the 6th of electronic switch T2 → the 5th diode D4;Submodule output voltage USM=Uc When, the second electronic switch T2, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the first electronic cutting T1, third electronic switch T3 are closed, and current direction is when bearing, the first capacitance C1 electric currents are bypassed, the second capacitance C2, third capacitance C3 discharges, and current flow paths are the 4th poles the electronic switch T5 → the two or two of electronic switch T6 → the 5th of electronic switch T4 → the 6th Pipe D2.As submodule output voltage USM=2UcWhen, the first electronic switch T2, the 4th electronic switch T4, the 5th electronic switch T5, 6th electronic switch T6 conductings, when the second electronic switch T2, third electronic switch T3 are turned off, and current direction is just the first electricity Hold C1, the second capacitance C2, the C3 chargings of third capacitance, current flow paths are the first diode D5 → the 6th of diode D1 → the 5th The diode D4 of diode D6 → the 4th;As submodule output voltage USM=2UcWhen, the first electronic switch T1, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 conductings, when the second electronic switch T2, third electronic switch T3 are turned off, and electricity Stream direction is negative, and the first capacitance C1, the second capacitance C2, the C3 electric discharges of third capacitance, current flow paths are the 4th electronic switch T4 → the six electronic switches of electronic switch T5 → first of electronic switch T6 → the 5th T1.3 kinds of voltage when to realize normal work Output.
When DC bus short trouble occurs for Converter DC-side, fault current flows into the MMC submodules, the first electricity Sub switch T1, the second electronic switch T2, third electronic switch T3, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronics Switch T6 lockings, the first capacitance C1, the second capacitance C2, third capacitance C3 reversely seal in current loop, port voltage USM=2Uc, Current path be the first capacitances of diode D1 → first capacitances of diode D6 → second of diode D5 → the 6th of C1 → the 5th C2 → Third capacitance C3 → the 4th diode D4;When the fault current outflow MMC submodules, the first electronic switch T1, the Two electronic switch T2, third electronic switch T3, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 lockings, First capacitance C1, the second capacitance C2 reversely seal in current loop, port voltage USM=-1.5Uc, current path is third diode The capacitances of D3 → second capacitances of diode D7 → first diodes of C1 → second of diode D8 → the 7th of C2 → the 8th D2.
Embodiment 1
Fig. 4 show the embodiment of the present invention 1.As shown in figure 4, the present embodiment is in modularization multi-level converter topology A series-parallel connection bridge arm in six bridge arm of three-phase, the bridge arm include MMC submodule G1, G2 ... Gm, half-bridge MMC submodules H1, H2 ... Hn and reactor L.The first exit connection DC side anode of first MMC submodules G1, the first MMC submodules The second exit of G1 connects the first exit of the 2nd MMC submodules G2, and so on, m MMC submodules connection is shared, The second exit of mMMC submodules Gm connects the first exit of the first half-bridge MMC submodules H1, the first half-bridge MMC submodules The second exit of block G1 connects the first exit of the second half-bridge MMC submodules G2, and so on, share n half-bridge MMC Module connects, n >=3, the first exit of the second exit linked reactor L of the n-th half-bridge MMC submodules G1, reactor L's Second exit connection exchange end.
As shown in figure 4, when transverter works normally, there are m MMC submodule, m >=3 in a bridge arm.Each submodule 3 kinds of voltages are exported, have n half-bridge MMC submodule, each submodule to export 2 kinds of voltages, output voltage amplitude is combined as (2m+n) Uc;When transverter DC bus breaks down, the direction of fault current is detected using current sensors such as mutual inductors, works as detection When flowing out bridge arm to fault current, the electronic cutting in MMC submodule G1, G2 ... Gm and half-bridge MMC submodule H1, H2 ... Hn Guan Jun is latched, and does not have in the half-bridge MMC submodules of trouble isolation serviceability capacitance by the clamper two of reverse parallel connection in electronic switch Pole pipe bypasses, have in MMC submodule G1, G2 ... Gm of trouble isolation serviceability capacitance by clamp diode differential concatenation into Fault current circuit;When detecting that fault current flows into bridge arm, MMC submodule G1, G2 ... Gm and half-bridge MMC submodules Electronic switch in H1, H2 ... Hn is latched, in MMC submodule G1, G2 ... Gm and half-bridge submodule H1, H2 ... Hn Capacitance, into fault current circuit, achievees the effect that block fault current by the equal differential concatenation of clamp diode.
Embodiment 2
Fig. 5 show the embodiment of the present invention 2.As shown in figure 5, the present embodiment is in MMC topologys in six bridge arm of three-phase One phase mixed connection bridge arm, including the first MMC submodule G11, G12 ... G1m, the 2nd MMC submodule G21, G22 ... G2m, first Half-bridge MMC submodule H11, H12 ... H1n, second half-bridge MMC submodule H21, H22 ... H2n, the first reactor L1, second Reactor L2, third reactor L3 and the 4th reactor L4.The first exit of first MMC submodules G11 connects DC side Anode, the second exit of the first MMC submodules G11 connect the first exit of the first MMC submodules G12, and so on, altogether There are m MMC submodules connection, m >=3.The first of the first reactor L1 of the second exit connection of first MMC submodules G1m is drawn Outlet, the second exit of the first reactor L1 connect the first exit of the second reactor L2 and exchange end, as upper bridge arm, The second exit of second reactor L2 connects the first exit of the first half-bridge MMC submodules H11, the first half-bridge MMC submodules The second exit of block H11 connects the first exit of the first half-bridge MMC submodules H12, and so on, share n half-bridge MMC Submodule connects, and the second exit of the first half-bridge MMC submodules H1n connects DC terminal cathode, as lower bridge arm.2nd MMC The first exit connection DC side anode of submodule G21, the second exit of the 2nd MMC submodules G21 connect the 2nd MMC The first exit of module G22, and so on, m MMC submodules connection is shared, the second of the 2nd MMC submodules T2m draws The first exit of end connection third reactor L3, the second exit of the first reactor L3 connect the first of the 4th reactor L4 Exit with exchange end, as upper bridge arm, the second exit of the 4th reactor L4 connects the second half-bridge MMC submodules H21's First exit, the second exit of the second half-bridge MMC submodules H21 connect the first of the second half-bridge MMC submodules H22 and draw End, and so on, n half-bridge MMC submodules connection is shared, the second exit of the second half-bridge MMC submodules H2n connects direct current Cathode is held, as lower bridge arm.
As shown in figure 5, when transverter works normally, there are m MMC submodule, each submodule to export 3 kinds of electricity in every phase Pressure has n half-bridge MMC submodule, each submodule to export 2 kinds of voltages, output voltage amplitude 2mUcOr nUc, work as DC side When breaking down, there are three types of situation, the first situation, the first MMC submodule G11, G12 ... G1m of fault current inflow altogether One phase bridge arm of composition, while another phase bridge arm of the 2nd MMC submodule G21, G22 ... G2m compositions is flowed out, event is sealed at this time The capacitance voltage for hindering circuit is 2mUc+3mUc/2;The second situation, fault current flow into the first MMC submodules G11, G12 ... One phase bridge arm of G1m compositions, while first half-bridge MMC submodule H11, H12 ... H1n are flowed out, fault loop is sealed at this time Capacitance voltage is 2mUc;The third situation, the Yi Xiangqiao of the first MMC submodule G11, G12 ... G1m compositions of fault current outflow Arm, while another phase bridge arm of second half-bridge MMC submodule G21, G22 ... G2m compositions is flowed into, fault loop is sealed at this time Capacitance voltage is nUc+3mUc/2。
Embodiment 3
Fig. 6 show the embodiment of the present invention 3.As shown in fig. 6, the present embodiment is in MMC topologys in six bridge arm of three-phase One phase mixed connection bridge arm, including the first MMC submodule G11, G12 ... G1m, the 2nd MMC submodule G21, G22 ... G2m, first Half-bridge MMC submodule H11, H12 ... H1n, second half-bridge MMC submodule H21, H22 ... H2n, the first reactor L1, second Reactor L2, third reactor L3 and the 4th reactor L4.
The first exit connection DC side anode of first half-bridge MMC submodules H11, the first half-bridge MMC submodules H11's Second exit connects the first exit of the first half-bridge MMC submodules H12, and so on, share n half-bridge MMC submodule Connection, n >=3.The second exit of first half-bridge MMC submodules H1n connects the first exit of the first reactor L1, the first electricity The second exit of anti-device L1 connects the first exit of the second reactor L2 and exchanges end, as upper bridge arm, the second reactor The second exit of L2 connects the first exit of the first MMC submodules G11, and the second exit of the first MMC submodules G11 connects The first exit of the first MMC submodules G12 is connect, and so on, share m MMC submodules connection, m >=3.First MMC submodules The second exit of block G1m connects DC terminal cathode, as lower bridge arm.The first exit of second half-bridge MMC submodules H21 connects DC side anode is connect, the second exit of the second half-bridge MMC submodules H21 connects the first of the second half-bridge MMC submodules H22 and draws Outlet, and so on, share the connection of n half-bridge MMC submodule, the second exit of the second half-bridge MMC submodules H2n connects the The first exit of three reactor L3, the second exit of the first reactor L3 connect the first exit of the 4th reactor L4 with End is exchanged, as upper bridge arm, the second exit of the 4th reactor L4 connects the first exit of the 2nd MMC submodules G21, the The second exit of two MMC submodules G21 connects the first exit of the 2nd MMC submodules G22, and so on, share m MMC submodules connect, and the second exit of the 2nd MMC submodules G2m connects DC terminal cathode, as lower bridge arm.
As shown in fig. 6, when normal work, there are m MMC submodule, each submodule to export 3 kinds of voltages in a phase, there are n Half-bridge MMC submodules, n >=3.Each submodule exports 2 kinds of voltages, output voltage amplitude 2mUcOr nUc, when DC side is sent out When raw failure, there are three types of situation, the first situation, first half-bridge MMC submodules H11, H12 ... of fault current inflow altogether One phase bridge arm of H1n compositions, while another phase bridge arm of second half-bridge MMC submodule H21, H22 ... H2m compositions is flowed out, this When seal in fault loop capacitance voltage be nUc;The second situation, the first half-bridge MMC submodules H11 of fault current inflow, One phase bridge arm of H12 ... H1m compositions, while the first MMC submodule G11, G12 ... G1n are flowed out, fault loop is sealed at this time Capacitance voltage be nUc+3mUc/2;The third situation, fault current flow out first half-bridge MMC submodule G11, G12 ... G1m One phase bridge arm of composition, while another phase bridge arm of the 2nd MMC submodule G21, G22 ... G2m compositions is flowed into, event is sealed at this time The capacitance voltage for hindering circuit is 2mUc+nUc

Claims (8)

1. a kind of MMC submodules with DC Line Fault blocking ability, it is characterised in that:The MMC submodules are by six electricity Sub switch T1, T2, T3, T4, T5, T6, eight diodes D1, D2, D3, D4, D5, D6, D7, D8 and three capacitance C1, C2, C3 groups At;The emitter of first output end of MMC submodules and the first electronic switch T1, the second electronic switch T2 collector first Tie point (1) is connected;The anode of the collector of first electronic switch T1 and the first capacitance C1, the 7th diode D7 cathode Two tie points (2) are connected;The cathode of the anode of 7th diode D7, the emitter of the 6th electronic switch T6, the 8th diode D8 It is connected in third tie point (3) with the collector of the 5th electronic switch T5;The collector of 6th electronic switch T6, the second capacitance C2 Anode be connected in the 4th tie point (4) with the collector of third electronic switch T3;Anode, the second capacitance of 8th diode D8 The cathode of C2 is connected with the anode of third capacitance C3 in the 5th tie point (5);Emitter, the 4th electronics of third electronic switch T3 The collector of switch T4 is connected with MMC submodules second output terminal in the 6th tie point (6);The transmitting of second electronic switch T2 Pole, the cathode of the first capacitance C1, the emitter of the 5th electronic switch T5 are connected in the 7th tie point (7);Third capacitance C3's is negative Pole, the emitter of the 4th electronic switch T4 are connected in the 8th tie point (8);First electronic switch T1 and the first diode D1 are simultaneously Connection, the second electronic switch T2 is in parallel with the second diode D2, and third electronic switch T3 is in parallel with third diode D3, the 4th electronics Switch T4 is in parallel with the 4th diode D4;The anode of the collector of the electronic switch of all parallel connections and diode connects, it is all simultaneously The emitter of the electronic switch of connection is connected with the cathode of diode.
2. MMC submodules according to claim 1, it is characterised in that:Transverter is in normal operating conditions, the submodule Block output voltage USMWhen=0, the second electronic switch T2, third electronic switch T3, the 5th electronic switch T5, the 6th electronic switch T6 Conducting, the first electronic switch T1, the 4th electronic switch T4 shutdowns;And current direction is positive ISM>When 0, the first capacitance C1, the second electricity Appearance C2, third capacitance C3 are bypassed, and current flow paths are the second diodes of diode D5 → the 6th of electronic switch T2 → the 5th D6 → third electronic switch T3;The submodule output voltage USMWhen=0, the second electronic switch T2, third electronic switch T3, Five electronic switch T5, the 6th electronic switch T6 conductings, the first electronic switch T1, the 4th electronic switch T4 shutdowns;And current direction To bear ISM<When 0, the first capacitance C1, the second capacitance C2, third capacitance C3 are bypassed, and current flow paths are third diode D3 → the six diodes of electronic switch T5 → second of electronic switch T6 → the 5th D2;As submodule output voltage USM=UcWhen, first Electronic switch T1, third electronic switch T3, the 5th electronic switch T5, the 6th electronic switch T6 conducting, the second electronic switch T2, the When four electronic switch T4 shutdowns, and current direction is timing, and the second capacitance C2, third capacitance C3 are bypassed, and the first capacitance C1 fills Electricity, current flow paths are the first diodes of diode D5 → the 6th of diode D1 → the 5th D6 → third electronic switch T3;When Submodule output voltage USM=UcWhen, the first electronic switch T1, third electronic switch T3, the 5th electronic switch T5, the 6th electronics Switch T6 conducting, when the second electronic switch T2, the 4th electronic switch T4 shutdowns, and when current direction is negative, the second capacitance C2, the Three capacitance C3 are bypassed, and the first capacitance C1 electric discharges, current flow paths are six electronic switch T6 → the of third diode D3 → the Five electronic switches of electronic switch T5 → first T1;Submodule output voltage USM=UcWhen, the second electronic switch T2, the 4th electronic cutting Close T4, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the first electronic switch T1, third electronic switch T3, and electric current side To for timing, the first capacitance C1 electric currents are bypassed, and the second capacitance C2, the C3 chargings of third capacitance, current flow paths are the second electricity The diode D6 → the 4th of diode D5 → the 6th of sub switch T2 → the 5th diode D4;Submodule output voltage USM=UcWhen, the Two electronic switch T2, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 conductings, the first electronic switch T1, Third electronic switch T3, and current direction is when bearing, the first capacitance C1 electric currents are bypassed, and the second capacitance C2, third capacitance C3 are put Electricity, current flow paths are the 4th diodes of electronic switch T5 → second of electronic switch T6 → the 5th of electronic switch T4 → the 6th D2;As submodule output voltage USM=2UcWhen, the first electronic switch T2, the 4th electronic switch T4, the 5th electronic switch T5, Six electronic switch T6 conductings, when the second electronic switch T2, third electronic switch T3 are turned off, and current direction is just the first capacitance C1, the second capacitance C2, the C3 chargings of third capacitance, current flow paths are the first diode D5 → the six or two of diode D1 → the 5th The diode D4 of pole pipe D6 → the 4th;As submodule output voltage USM=2UcWhen, the first electronic switch T1, the 4th electronic switch T4, 5th electronic switch T5, the 6th electronic switch T6 conductings, when the second electronic switch T2, third electronic switch T3 are turned off, and electric current Direction is negative, the first capacitance C1, the second capacitance C2, third capacitance C3 electric discharge, current flow paths be the 4th electronic switch T4 → 6th electronic switches of electronic switch T5 → first of electronic switch T6 → the 5th T1;3 kinds of voltage is defeated when to realize normal work Go out.
3. MMC submodules according to claim 1, it is characterised in that:DC bus short circuit event occurs for Converter DC-side When barrier, fault current flows into the MMC submodules, the first electronic switch T1, the second electronic switch T2, third electronic switch T3, the 4th electronic switch T4, the 5th electronic switch T5, the 6th electronic switch T6 locking, the first capacitance C1, the second capacitance C2, the Three capacitance C3 reversely seal in current loop, port voltage USM=2Uc, current path be the first capacitances of diode D1 → first C1 → 5th capacitances of diode D6 → second of diode D5 → the 6th C2 → third capacitance C3 → the 4th diode D4;When fault current stream Go out the MMC submodules, the first electronic switch T1, the second electronic switch T2, third electronic switch T3, the 4th electronic cutting T4, the 5th electronic switch T5, the 6th electronic switch T6 lockings are closed, the first capacitance C1, the second capacitance C2 reversely seal in current loop, Port voltage USM=-1.5Uc, current path is the poles the third diode capacitances of the D3 → second diode D8 → the seven or two of C2 → the 8th The capacitances of pipe D7 → first diodes of C1 → second D2.
4. MMC submodules according to claim 1, it is characterised in that:The MMC submodules constitute six bridge arm structure of three-phase Modularization multi-level converter;The each phase bridge arm of modularization multi-level converter is made of MMC submodules;Upper bridge arm top connects Enter DC side anode, upper bridge arm bottom end is connect by reactor with exchange side, and lower bridge arm top is connected by reactor and exchange side It connects;Lower bridge arm low side accesses DC side cathode.
5. MMC submodules according to claim 1, it is characterised in that:The MMC submodules are configured to six bridge arm of three-phase The modularization multi-level converter of structure;The each phase bridge arm of modularization multi-level converter is by m the MMC submodules and n A half-bridge MMC submodules are constituted, wherein m >=3, n >=3, and all submodule capacitor voltage UcThe sum of to be equal to transverter direct current female Line voltage Udc, i.e. Uc(2m+n)=Udc;The upper bridge arm top access DC side anode, upper bridge arm bottom end passes through reactor and friendship Side connection is flowed, lower bridge arm top is connect by reactor with exchange side;Lower bridge arm low side accesses DC side cathode.
6. MMC submodules according to claim 5, it is characterised in that:The each phase of the modularization multi-level converter Upper bridge arm be made of the MMC submodules, lower bridge arm is made of half-bridge MMC submodules.
7. MMC submodules according to claim 5, it is characterised in that:The each phase of the modularization multi-level converter Lower bridge arm be made of MMC submodules, upper bridge arm is made of half-bridge MMC submodules.
8. MMC submodules according to claim 5, it is characterised in that:The normal work of the modularization multi-level converter When making, there are m MMC submodule and n half-bridge MMC submodule in a bridge arm, each MMC submodules export 3 kinds of electricity Pressure, each half-bridge MMC submodules export 2 kinds of voltages, and output voltage amplitude is combined as (2m+n) Uc;When transverter DC bus is sent out Raw failure, when fault current flows out bridge arm, all mould electronic switch lockings in the block, half-bridge MMC submodules capacitance in the block is by two Pole bypasses, and MMC submodules capacitance differential concatenation in the block is into fault loop;When fault current flows into bridge arm, all modules In electronic switch locking, the MMC submodules and the equal differential concatenation of half-bridge MMC submodules capacitance in the block into fault loop, Achieve the effect that block fault current.
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CN110224623A (en) * 2019-06-12 2019-09-10 四川大学 A kind of modularization multi-level converter and submodule that DC Line Fault blocks
CN110247566A (en) * 2019-07-05 2019-09-17 沈阳工业大学 A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method
CN110994974A (en) * 2019-11-25 2020-04-10 上海交通大学 Low-loss modular multi-level direct current-direct current converter and submodule thereof
CN111277142A (en) * 2020-03-09 2020-06-12 中国科学院电工研究所 Coupling inductance type high-voltage high-power direct-current converter for space and control system thereof
CN111756265A (en) * 2020-07-28 2020-10-09 华北电力大学(保定) Half-level MMC topological structure and modulation method thereof
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CN109039128A (en) * 2018-08-07 2018-12-18 南京航空航天大学 MMC submodule topological structure based on clamp and energy transfer circuits
CN109861512A (en) * 2019-03-08 2019-06-07 西安交通大学 A kind of clamper Shuangzi module with DC Line Fault self-cleaning ability
CN110224623A (en) * 2019-06-12 2019-09-10 四川大学 A kind of modularization multi-level converter and submodule that DC Line Fault blocks
CN110247566B (en) * 2019-07-05 2021-04-13 沈阳工业大学 Direct current side fault detection and blocking method based on MMC asymmetric network
CN110247566A (en) * 2019-07-05 2019-09-17 沈阳工业大学 A kind of detection of the DC side failure based on MMC dissymmetric network and blocking-up method
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CN110994974B (en) * 2019-11-25 2020-11-20 上海交通大学 Low-loss modular multi-level direct current-direct current converter and submodule thereof
CN111277142A (en) * 2020-03-09 2020-06-12 中国科学院电工研究所 Coupling inductance type high-voltage high-power direct-current converter for space and control system thereof
CN111277142B (en) * 2020-03-09 2022-02-11 中国科学院电工研究所 Coupling inductance type high-voltage high-power direct-current converter for space and control system thereof
CN111756265A (en) * 2020-07-28 2020-10-09 华北电力大学(保定) Half-level MMC topological structure and modulation method thereof
CN111756265B (en) * 2020-07-28 2023-09-01 华北电力大学(保定) Half-level MMC topological structure and modulation method thereof
CN114336551A (en) * 2022-01-14 2022-04-12 贵州大学 Flexible direct current transmission system fault protection system based on MMC

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