CN108292634B - 传感器半导体器件和生产传感器半导体器件的方法 - Google Patents
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Abstract
传感器半导体器件包括具有主表面(2)的基板(1)、在主表面上或上方的传感器区域(3)、在主表面上方的涂覆层(4)以及被形成在传感器区域周围的涂覆层中的沟槽(5)。沟槽提供来自涂覆层的液体的排放。
Description
背景技术
半导体器件被提供用于包括传感器特别是相对湿度传感器的各种应用。湿度传感器必须与环境接触,并且因此可以经受冷凝。许多传感器应用要求从冷凝快速恢复。当温度升高到露点以上时,存在于传感器区域上的水滴应该瞬时消失,露点是恒定大气压力下空气样品中的水蒸气以其蒸发的同一速率冷凝成液态水的温度。
美国2013/0069176 Al公开了包括覆盖有保护层的传感器元件区域的集成电路封装。集成电路被安装在载体上并且被接合线连接。覆盖接合线的包封在传感器元件区域上具有开口。在开口内侧,保护层包括环绕传感器元件区域的通道。
日本2010-050452 A公开了用于制造具有被布置在引线框架上的多个芯片的传感器器件的方法。芯片的检测器结构可以包括湿度传感器的聚合物膜。缓冲层被形成在集成的电子电路上方,并且使检测器结构自由。模塑的盖接触检测器结构的外周处的缓冲层,因此在检测器结构上方形成密封的腔体。
日本2012-068054 A公开了包括被亲水的膜环绕的湿气敏感膜的静电电容型湿度传感器,其具有其中冷凝的水形成膜的凹槽。如果在湿度传感器周围的空气的温度变得高于露点温度,则亲水膜的凹槽部分中的水蒸发,并且水中所含有的污物保留。
美国2009/0243015 Al公开了一种用于制造半导体器件的方法,其中,树脂层被形成在包括光电二极管的基板的上表面上,使得树脂层不覆盖光接收区域。同心凹槽被形成在树脂层中,使得凹槽环绕光接收区域。光电二极管被用模塑树脂密封。凹槽防止模塑树脂流入到光接收区域中。
德国112013004203 T5公开了包括湿气敏感层的传感器器件,湿气敏感层设置有凹部以防止模塑期间树脂进入测量部分。
日本2002-162380 A公开了包括在离子感测部分周围的凹陷部的半导体离子传感器。凹陷部防止树脂流入到离子感测部分中。
发明内容
本发明的目的是提出一种传感器半导体器件,特别是相对湿度传感器,其提供冷凝的快速移除而无需内部加热。本发明的再一目的是提出一种生产此类传感器半导体器件的方法。
这些目的用根据权利要求1所述的传感器半导体器件和用根据权利要求7所述的生产传感器半导体器件的方法来实现。从从属权利要求得到再一些实施例和变型例。
传感器半导体器件包括具有主表面的基板、在主表面上或上方的传感器区域、在传感器区域中的传感器元件、在主表面上方的涂覆层以及被形成在传感器区域周围的涂覆层中的沟槽。沟槽提供来自涂覆层的液体的排放。传感器元件由涂覆层完全覆盖,涂覆层由可以被湿气渗透的材料形成。涂覆层具有背离基板的上表面,上表面在由沟槽环绕的区域中是平坦的。
在传感器半导体器件的实施例中,亲水的衬里被布置在沟槽中。亲水的衬里也可以被布置在主表面与涂覆层之间。亲水的衬里可以被暴露在沟槽中。
在传感器半导体器件的再一实施例中,在传感器区域周围的涂覆层中形成通道,使得沟槽被布置在传感器区域与通道之间。
在传感器半导体器件的再一实施例中,模塑化合物被布置在涂覆层上或上方,使得传感器区域和沟槽不被模塑化合物覆盖,并且通道完全环绕整个没有模塑化合物的区域。
在传感器半导体器件的再一实施例中,被沟槽环绕的区域整个被涂覆层覆盖。
在传感器半导体器件的再一实施例中,涂覆层包括湿气敏感材料。
生产传感器半导体器件的方法包括形成包含传感器区域的涂覆层和在传感器区域周围的涂覆层中形成沟槽,所述传感器区域包括在基板的主表面上或上方的传感器元件,所述沟槽提供来自涂覆层的液体的排放。传感器元件由涂覆层完全覆盖,涂覆层由可以被湿气渗透的材料形成。在由沟槽环绕的区域中,涂覆层被形成为使得其具有背离基板的平坦的上表面。
在方法的变型例中,亲水的衬里被布置在主表面与涂覆层之间,并且亲水的衬里被暴露在沟槽中。
在方法的再一变型例中,亲水的衬里被配置为使得其仅存在于沟槽中。
在方法的再一变型例中,涂覆层由湿气敏感材料形成。
在方法的再一变型例中,通道被形成在涂覆层中,该通道完全环绕包括传感器区域的区域,使得沟槽被布置在传感器区域与通道之间,模塑化合物被施加在涂覆层上或上方,使得传感器区域和沟槽不被模塑化合物覆盖,并且通道被用作屏障以防止模塑化合物延伸到由通道环绕的区域中。
在方法的再一变型例中,沟槽被形成为完全环绕整个由涂覆层覆盖的区域。
附图说明
下面,结合附图更加详细地描述本发明的实施例和变型例。
图1是传感器半导体器件的实施例的截面。
图2是在图1中示出的实施例的俯视图。
具体实施方式
图1示出了包括传感器半导体器件的基板1的集成电路封装,其包括在主表面2上或上方的传感器区域3。基板1可以包括半导体本体,例如,其可以包括如CMOS电路的集成电路,并且可以设置有由金属化层和金属间电介质形成的常规布线。
涂覆层4被施加在主表面2上方。例如,涂覆层4可以是典型地4至5μm厚。涂覆层4可以包括有机材料或无机材料。例如,涂覆层4可以特别包括聚合物。涂覆层4可以被特别提供为敏感层。敏感层可以包括被提供用于湿度传感器(特别是相对湿度传感器)的湿气敏感材料。聚酰亚胺可以特别作为湿气敏感材料而被用于涂覆层4。
传感器元件10可以被布置在传感器区域3中,如通过示例方式在图1中示出的实施例中那样。例如,传感器元件10可以包括湿度传感器或环境光传感器,或另一类型的传感器。传感器元件10的细节是与本发明无关的并且不被示出在图1中。如果提供传感器元件10,则涂覆层4可以覆盖传感器元件10。例如,如果传感器元件10被提供用于湿度传感器并且被完全覆盖,则涂覆层4由可以被湿气渗透的材料(诸如聚酰亚胺)形成。
涂覆层4可以特别包括光-可定义的层(即,可以通过使用光刻来图案化的层),并且可以特别包括光刻胶。如果涂覆层4不包括光-可定义的层,则专用光刻胶层可以被施加并且由标准光刻图案化以形成用于蚀刻涂覆层4的掩模。
涂覆层4中的沟槽5被形成在传感器区域3的附近。沟槽5可以特别(部分地或完全地)环绕传感器区域3。提供沟槽5以排出液体,特别是水,其可以冷凝在涂覆层4的表面上,特别是在传感器区域3上方。传感器区域3与沟槽5之间的距离d可以小于5μm。
沟槽5可以完全环绕传感器区域3。在这种情况下,涂覆层4可以覆盖由沟槽5环绕的整个区域。在此区域中,涂覆层4可以特别包括如图1中示出的相当平坦的上表面8。
亲水的衬里7可以被布置在沟槽5中。亲水的衬里7可以被限制至沟槽5。作为替代,亲水的衬里7也可以被布置在主表面2与涂覆层4之间,如通过示例方式在图1中示出的那样。在后一情况下,亲水的衬里7可以被凹陷在沟槽5外部的区域中,特别是在传感器区域3中。如果提供传感器元件10,则亲水的衬里7可以被布置在传感器元件10上或上方,如通过示例方式在图1中示出的那样,或者可以被布置在传感器元件10下方。如果提供亲水的衬里7,则其有助于将来自涂覆层4的上表面8的液体排放到沟槽5中,特别是如果亲水的衬里7被暴露在沟槽5的底部处。
可以在传感器区域3周围和在沟槽5周围形成通道6。在一些实施例中,传感器区域3与通道6之间的距离D可以是传感器区域3与沟槽5之间的距离d的至少三倍大。通道6充当用于模塑化合物9的陷阱,模塑化合物9被用作包封材料。在上面引用的美国2013/0069176Al中详细解释了用于模塑过程的通道6的优点。可以提供模塑化合物9,以覆盖呈基板1的集成电路与引线框架之间的接合线形式的互连件,基板1可以被安装在引线框架上。引线框架提供集成电路的外部连接或端子。
模塑化合物9不覆盖传感器区域3和沟槽5。具体而言,通道6可以至少大致界定出模塑化合物9中的开口区域,其中,涂覆层4的上表面8可以是裸露的以待被充分地暴露于环境条件。
如果提供传感器元件10,则其可以被布置在基板1的主表面2上或上方的传感器区域3内,如通过示例方式在图1中示出的实施例中那样。其可以特别被提供用于相对湿度传感器,其操作通过用沟槽5实现的从冷凝快速恢复显著改善。传感器元件可以替代地被嵌入在基板1中,前提是位置适合于感测操作。
图2是根据图1的实施例的俯视图。在图2中指示了图1的截面的位置。相应元件的附图标记在两个图中是相同的。图2示出了沟槽5在小距离d处完全环绕传感器区域3。鉴于有效排放可以因此将沟槽5限制至传感器区域3的外周。在根据图2的实施例中,传感器区域3的边界是正方形,但是其可以具有任何其它形状。传感器区域3可以典型地占据大约0.1×0.1mm2的面积。如果沟槽5紧密跟随传感器区域3的边界,则其具有基本上相同的形状,如从图2可以看出的。沟槽5被布置在其中冷凝要被排放的位置处,但是沟槽5并非必须完全环绕传感器区域3并形成闭合的路径。
可以提供通道6,以从被提供用于开口的区域来阻断模塑化合物9(其未示出在图2中)。出于此目的,通道6的形状可以适于开口的外部限制,例如,其可以形成如在图2中示出的八边形,或者具有如圆形或正方形的任何其它适当形状。通道6被布置在离沟槽5周围的传感器区域3的较大距离D处。在再一些实施例中,传感器区域3与通道6之间的距离D的最小值可以是传感器区域3与沟槽5之间的距离d的最大值的至少三倍大。
沟槽5可以被形成为穿透涂覆层4的狭缝。如果提供通道6,则其也可以穿透涂覆层4。如果此类狭缝完全环绕传感器区域3,则涂覆层4被分成分离的部分,其被示出在图2中。如果提供亲水的衬里7,其被可选地暴露在沟槽5的底部处,并且也可以被暴露在通道6的底部处。这也被示出在图2中。亲水的衬里7吸引湿气从而有助于将来自涂覆层4的上表面8的液体排出。
例如,如果光可定义的层(如光可定义的聚合物)被用于涂覆层4,则光可定义的层可以由光刻图案化。例如,如果另一材料(如BCB(苯并环丁烯))被施加以形成涂覆层4,则沟槽5可以被蚀刻在涂覆层4中。在这种情况下,例如,光可定义的层(如光刻胶)可以被施加并图案化,以用于限定沟槽5。
本发明提出了通过利用狭缝或沟槽来收集冷凝的水而使得能够从传感器(特别是相对湿度传感器)上的冷凝快速恢复的改进的方式。沟槽是无源元件,其不像实现的加热器需要电操作和功率消耗。沟槽的形成是相对容易的,并且因此相对廉价。在另一方面,其提供了液滴的快速且有效的排放。
附图标记
1基板
2基板的主表面
3传感器区域
4涂覆层
5沟槽
6通道
7亲水的衬里
8涂覆层的上表面
9模塑化合物
10传感器元件
d传感器区域与沟槽之间的距离
D传感器区域与通道之间的距离
Claims (9)
1.一种传感器半导体器件,包括:
基板(1),其包括主表面(2),
传感器区域(3),其在所述主表面(2)上或上方,
传感器元件(10),其在所述传感器区域(3)中,以及
涂覆层(4),其在所述主表面(2)的上方,所述涂覆层(4)包含所述传感器区域(3),其特征在于,
所述传感器元件(10)被所述涂覆层(4)完全覆盖,
所述涂覆层(4)由能够被湿气渗透的材料形成,
沟槽(5)被形成在所述传感器区域(3)周围的所述涂覆层(4)中,所述沟槽(5)提供来自所述涂覆层(4)的液体的排放,以及
所述涂覆层(4)具有背离所述基板(1)的上表面(8),所述上表面(8)在由所述沟槽(5)环绕的区域中是平坦的;
其中亲水的衬里(7)被布置在所述主表面(2)和所述涂覆层(4)之间,以及所述亲水的衬里(7)被暴露在所述沟槽(5)中。
2.根据权利要求1所述的传感器半导体器件,还包括:
被形成在所述传感器区域(3)周围的所述涂覆层(4)中的通道(6),被布置在所述传感器区域(3)与所述通道(6)之间的所述沟槽(5)。
3.根据权利要求2所述的传感器半导体器件,还包括:
被布置在所述涂覆层(4)上或上方的模塑化合物(9),
不被所述模塑化合物(9)覆盖的所述传感器区域(3)和所述沟槽(5),以及
完全环绕整个没有所述模塑化合物(9)的区域的所述通道(6)。
4.根据权利要求1至3中的任意一项所述的传感器半导体器件,其中,由所述沟槽(5)环绕的所述区域整个被所述涂覆层(4)覆盖。
5.根据权利要求1至3中的任意一项所述的传感器半导体器件,其中,所述涂覆层(4)包括湿气敏感材料。
6.一种生产传感器半导体器件的方法,包括:
形成包含传感器区域(3)的涂覆层(4),所述传感器区域(3)包括在基板(1)的主表面(2)上或上方的传感器元件(10),以及
将亲水的衬里(7)布置在所述主表面(2)和所述涂覆层(4)之间,以及将所述亲水的衬里(7)暴露在沟槽(5)中,
其特征在于,
所述传感器元件(10)被所述涂覆层(4)完全覆盖,
所述涂覆层(4)由能够被湿气渗透的材料形成,
所述沟槽(5)被形成在所述传感器区域(3)周围的所述涂覆层(4)中,所述沟槽(5)提供来自所述涂覆层(4)的液体的排放,
在由所述沟槽(5)环绕的区域中,所述涂覆层(4)被形成为使得其具有背离所述基板(1)的平坦的上表面(8)。
7.根据权利要求6所述的生产传感器半导体器件的方法,其中,所述涂覆层(4)由湿气敏感材料形成。
8.根据权利要求6或7所述的生产传感器半导体器件的方法,还包括:
在所述涂覆层(4)中形成通道(6),所述通道(6)完全环绕包括所述传感器区域(3)的区域,使得所述沟槽(5)被布置在所述传感器区域(3)与所述通道(6)之间,将模塑化合物(9)施加在所述涂覆层(4)上或上方,使得所述传感器区域(3)和所述沟槽(5)不被所述模塑化合物覆盖,并且将所述通道(6)作为屏障使用以防止所述模塑化合物(9)延伸到由所述通道(6)环绕的区域中。
9.根据权利要求6或7中的任意一项所述的生产传感器半导体器件的方法,其中,所述沟槽(5)被形成为完全环绕整个被所述涂覆层(4)覆盖的区域。
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