CN108287587B - Temperature compensation circuit and display device - Google Patents
Temperature compensation circuit and display device Download PDFInfo
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- CN108287587B CN108287587B CN201810041585.XA CN201810041585A CN108287587B CN 108287587 B CN108287587 B CN 108287587B CN 201810041585 A CN201810041585 A CN 201810041585A CN 108287587 B CN108287587 B CN 108287587B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The disclosure provides a temperature compensation circuit and a display device. The temperature compensation circuit includes: the first voltage division module comprises a thermistor, and the input end of the first voltage division module is connected to a first voltage source; the output end of the second voltage division module is connected to the voltage output end of the temperature compensation circuit, and the input end of the second voltage division module is connected to a second voltage source; and the MOS tube is respectively connected with the first voltage division module and the second voltage division module. According to the temperature-sensitive display device, the grid-source voltage of the MOS tube can be adjusted through the characteristic that the resistance value of the thermistor changes correspondingly along with the temperature, so that the drain-source current of the MOS tube is adjusted, the output voltage of the second voltage division module, namely the output voltage of the temperature compensation circuit, is adjusted, and when the temperature compensation circuit is applied to a display panel, the display panel can achieve a better display effect at different temperatures.
Description
Technical Field
The disclosure relates to the technical field of display, in particular to a temperature compensation circuit and a display device.
Background
With the increasing maturity of Thin Film Transistor-Liquid Crystal Display (TFT-LCD) industry, users have higher and higher requirements for Display product quality and quality.
When the TFT liquid crystal display displays, grid input signals are generated through the shift register, and pixels of each row are scanned from the first row to the last row in sequence. In order to reduce the manufacturing cost of TFT liquid crystal displays, some manufacturers have manufactured multi-stage amorphous silicon shift registers directly On a glass substrate of a panel through a semiconductor process, and TFTs made of amorphous silicon materials have large current variation with temperature, so that the driving capability of the TFTs is weakened. However, changing the Gate On Voltage of the TFT generally causes Vcom to change, which may cause Flicker (Flicker) phenomenon of the lcd panel. Therefore, the temperature compensation of Vcom must be considered while using the adjusted Gate On Voltage for temperature compensation.
Therefore, there is still a need for improvement in the prior art solutions.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
An object of the present disclosure is to provide a temperature compensation circuit and a display device, thereby overcoming, at least to some extent, one or more of the problems due to the limitations and disadvantages of the related art.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows, or in part will be learned by practice of the disclosure.
According to an aspect of the present disclosure, there is provided a temperature compensation circuit including: the first voltage division module comprises a thermistor, and the input end of the first voltage division module is connected to a first voltage source; the output end of the second voltage division module is connected to the voltage output end of the temperature compensation circuit, and the input end of the second voltage division module is connected to a second voltage source; and the MOS tube is respectively connected with the first voltage division module and the second voltage division module.
In an exemplary embodiment of the present disclosure, the first voltage dividing module includes a first resistor, the first voltage source is a positive voltage source, and the second voltage dividing module includes a third resistor and a fourth resistor.
In an exemplary embodiment of the present disclosure, the fourth resistance is a sliding resistor.
In an exemplary embodiment of the present disclosure, the second voltage source is a positive voltage source, the MOS transistor is an NMOS transistor, wherein a first end of the first resistor is connected to an output end of the first voltage source; the second end of the first resistor and the first end of the thermistor are both connected to the grid of the NMOS tube; the second end of the thermistor and the source electrode of the NMOS tube are connected to a third voltage source; a first end of the fourth resistor is connected to an output end of the second voltage source; the second end and the third end of the fourth resistor are connected to the first end of the third resistor; the second end of the third resistor is connected to the drain electrode of the NMOS tube.
In an exemplary embodiment of the present disclosure, the second voltage source is a negative voltage source, the MOS transistor is an NMOS transistor, wherein a first end of the first resistor and a first end of the fourth resistor are connected to an output end of the first voltage source; the second end of the first resistor and the first end of the thermistor are both connected to the grid of the NMOS tube; the second end of the thermistor is connected to a third voltage source; the second end and the third end of the fourth resistor are connected to the first end of the third resistor; the second end of the third resistor is connected to the drain electrode of the NMOS tube; and the source electrode of the NMOS tube is connected to the output end of the second voltage source.
In an exemplary embodiment of the present disclosure, the second voltage source is a negative voltage source, the MOS transistor is a PMOS transistor, wherein the first end of the thermistor and the source of the PMOS transistor are both connected to the output end of the first voltage source; the second end of the thermistor and the first end of the first resistor are both connected to the grid of the PMOS tube; the second end of the first resistor is connected to a third voltage source; the first end of the fourth resistor is connected to the drain electrode of the PMOS tube; the second end and the third end of the fourth resistor are connected to the first end of the third resistor; the second end of the third resistor is connected to the output end of the second voltage source.
In an exemplary embodiment of the present disclosure, the resistance value of the thermistor increases as the temperature increases.
In an exemplary embodiment of the present disclosure, the resistance value of the thermistor decreases as the temperature increases.
In an exemplary embodiment of the present disclosure, the thermistor, the fourth resistor and the third resistor are matched with the impedance of the MOS transistor, so that the MOS transistor is in a saturation region in an operating state.
According to an aspect of the present disclosure, a display device is provided, which includes the temperature compensation circuit.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 shows a schematic diagram of a temperature compensation circuit in an exemplary embodiment of the present disclosure.
Fig. 2 shows a circuit diagram of a first temperature compensation circuit in an exemplary embodiment of the present disclosure.
Fig. 3 shows a circuit diagram of a second temperature compensation circuit in an exemplary embodiment of the present disclosure.
Fig. 4 shows a circuit diagram of a third temperature compensation circuit in an exemplary embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, devices, steps, and the like.
It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.
Currently, the display effect of the LCD panel varies with temperature, Vcom (common voltage) of the best display effect of a part of the panel increases with increasing temperature, and Vcom of the best display effect of a part of the panel decreases with increasing temperature. Therefore, it is necessary to compensate Vcom temperature, so that the LCD panel can achieve better display effect at different temperatures.
Fig. 1 shows a schematic diagram of a temperature compensation circuit in an exemplary embodiment of the present disclosure.
As shown in fig. 1, the temperature compensation circuit provided in this embodiment includes: the first voltage division module comprises a thermistor, and the input end of the first voltage division module is connected to a first voltage source; the output end of the second voltage division module is connected to the voltage output end of the temperature compensation circuit, and the input end of the second voltage division module is connected to a second voltage source; and the MOS tube is respectively connected with the first voltage division module and the second voltage division module.
In an exemplary embodiment, the first voltage dividing module includes a first resistor, the first voltage source is a positive voltage source, and the second voltage dividing module includes a third resistor and a fourth resistor.
In an exemplary embodiment, the fourth resistance is a sliding resistor.
In an exemplary embodiment, the second voltage source is a positive voltage source, the MOS transistor is an NMOS (N-Metal-Oxide-Semiconductor) transistor, wherein a first end of the first resistor is connected to an output end of the first voltage source; the second end of the first resistor and the first end of the thermistor are both connected to the grid of the NMOS tube; the second end of the thermistor and the source electrode of the NMOS tube are connected to a third voltage source; a first end of the fourth resistor is connected to an output end of the second voltage source; the second end and the third end of the fourth resistor are connected to the first end of the third resistor; the second end of the third resistor is connected to the drain electrode of the NMOS tube.
A Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) is a Field-Effect Transistor (Field-Effect Transistor) that can be widely used in analog circuits and digital circuits. MOSFETs are classified into two types, i.e., N-type and P-type, according to their "channel" (working carrier) polarities, and are also called NMOSFET and PMOSFET, which may be referred to as NMOS and PMOS, respectively.
The working principle of the MOS transistor (N-channel enhancement type MOS field effect transistor) is that Vgs is used for controlling the quantity of 'induced charges' so as to change the condition of a conductive channel formed by the 'induced charges' and then achieve the purpose of controlling the drain current Ids.
In an exemplary embodiment, the second voltage source is a negative voltage source, the MOS transistor is an NMOS transistor, wherein a first end of the first resistor and a first end of the fourth resistor are connected to an output end of the first voltage source; the second end of the first resistor and the first end of the thermistor are both connected to the grid of the NMOS tube; the second end of the thermistor is connected to a third voltage source; the second end and the third end of the fourth resistor are connected to the first end of the third resistor; the second end of the third resistor is connected to the drain electrode of the NMOS tube; and the source electrode of the NMOS tube is connected to the output end of the second voltage source.
In an exemplary embodiment, the second voltage source is a negative voltage source, the MOS transistor is a PMOS transistor, and the first end of the thermistor and the source of the PMOS transistor are both connected to the output end of the first voltage source; the second end of the thermistor and the first end of the first resistor are both connected to the grid of the PMOS tube; the second end of the first resistor is connected to a third voltage source; the first end of the fourth resistor is connected to the drain electrode of the PMOS tube; the second end and the third end of the fourth resistor are connected to the first end of the third resistor; the second end of the third resistor is connected to the output end of the second voltage source.
It should be noted that, in the embodiment of the present invention, the third voltage source may be a ground. However, the disclosure is not limited thereto, and for example, in other embodiments, the third voltage source may also be a negative voltage source.
In an exemplary embodiment, the resistance of the thermistor increases as the temperature increases.
For example, the thermistor is a PTC (Positive Temperature Coefficient) thermistor. PTC refers broadly to semiconductor materials or devices having a large positive temperature coefficient. Reference to PTC is generally made to positive temperature coefficient thermistors, referred to as PTC thermistors for short. A PTC thermistor is a semiconductor resistor typically having temperature sensitivity, and its resistance value increases stepwise with an increase in temperature (curie temperature) beyond a certain temperature. The ceramic PTC is a semiconductor ceramic which is prepared by sintering barium titanate (or strontium, lead) as a main component, with a small amount of donor (Y, Nb, Bi, Sb), acceptor (Mn, Fe) elements, and additives such as glass (silica, alumina).
In an exemplary embodiment, the resistance value of the thermistor decreases as the temperature increases.
For example, the thermistor is an NTC (Negative Temperature Coefficient) thermistor. NTC refers to the phenomenon and materials of thermistors with negative temperature coefficients that decrease exponentially with increasing temperature. The material is a semiconductor ceramic which is prepared by fully mixing, molding, sintering and other processes of two or more than two metal oxides of manganese, copper, silicon, cobalt, iron, nickel, zinc and the like, and can be prepared into a thermistor with a Negative Temperature Coefficient (NTC). The resistivity and material constant of the material vary with the material composition ratio, sintering atmosphere, sintering temperature and structural state. Non-oxide NTC thermistor materials typified by silicon carbide, tin selenide, tantalum nitride, and the like have also been developed.
In practical applications, NTC thermistors are generally used in consideration of production costs.
In an exemplary embodiment, the thermistor, the fourth resistor and the third resistor are matched with the impedance of the MOS transistor, so that the MOS transistor is in a saturation region in an operating state.
Taking the NMOS transistor as an example, when Vgs < Vth (threshold voltage), the NMOS transistor is in the cut-off region. That is, when the gate-source voltage is lower than the threshold voltage, the tube is not conductive. When Vgs is greater than Vth and Vgs-Vth < Vds, the NMOS transistor is in the saturation region. At this time, the drain current Ids can be considered independent of Vds.
In an exemplary embodiment, the fourth resistance is a sliding resistor.
In the embodiment of the invention, at normal temperature, Vcom at normal temperature can be adjusted by adjusting the resistance value of the sliding resistor, so that the display effect of the screen is ensured.
The embodiment of the invention provides a temperature compensation circuit, which can adjust the gate-source voltage of an MOS (metal oxide semiconductor) tube through the characteristic that the resistance value of a thermistor changes correspondingly along with the change of temperature, thereby adjusting the drain-source current of the MOS tube and adjusting the output voltage of a second voltage division module, namely the output voltage of the temperature compensation circuit.
In some embodiments, the temperature compensation circuit can be applied to the LCD panel driving circuit to adjust the Vcom voltage. The circuit adjusts the Vgs voltage of the MOS tube and changes the current Ids through the change of the resistance value of the thermistor along with the temperature, thereby achieving the adjustment of Vcom and enabling the LCD panel to achieve the best display effect at different temperatures.
It should be noted that, although the embodiments of the disclosure have been described by taking the adjustment of the common voltage Vcom applied to the display panel by the temperature compensation circuit as an example, the disclosure is not limited thereto, and the temperature compensation circuit is not only applicable to the Vcom voltage in the display panel, but also applicable to the temperature compensation of other voltages in the display panel or other products.
The temperature compensation circuit is illustrated below by means of fig. 2-4, respectively.
The embodiment of the invention provides a Vcom temperature compensation circuit applicable to an LCD panel, wherein R2 in a circuit schematic diagram are all thermistors, R4 is a sliding resistor, and the MOSFETs work in a saturation region through the impedance matching of R3 and R4 with the MOSFETs.
Fig. 2 shows a circuit diagram of a first temperature compensation circuit in an exemplary embodiment of the present disclosure.
As shown in fig. 2, the first resistor R1 and the second resistor R2 form a first voltage divider module. The third resistor R3 and the fourth resistor R4 form a second voltage division module. Two ends of the R1 are respectively connected to the first ends of the first voltage sources VDD1 and R2, wherein the connection point of the second end of the R1 and the first end of the R2 is the output end of the first voltage dividing module. The first end of the R1 is the input end of the first voltage division module. The second end of the R2 and the source S of the NMOS tube are both grounded. The first terminal of R4 is the input terminal of the second voltage divider module, and is connected to the second voltage source VDD 2. The second terminal and the third terminal of R4 are connected to Vcom and the first terminal of R3, wherein the first terminal of R3 is the output terminal of the second voltage division module. The second end of the R3 is connected to the drain D of the NMOS transistor.
If the resistance value of the thermistor R2 increases with the increase of temperature, when the temperature rises, the Vgs of the NMOS tube increases, and since the NMOS tube works in a saturation region, Ids increases, voltage drop on R4 increases, and Vcom decreases.
If the resistance value of the thermistor R2 is reduced along with the increase of the temperature, when the temperature is increased, the Vgs of the NMOS tube is reduced, the Ids is reduced because the NMOS tube works in a saturation region, the voltage drop on the R4 is reduced, and the Vcom is increased.
The first voltage source VDD1 in fig. 2 is a positive voltage source, and may be 3.3V, for example. The second voltage source VDD2 is also a positive voltage source, and may be, for example, 6-7V. With the temperature compensation circuit of fig. 2, Vcom of a positive voltage can be output when the third voltage source is grounded.
Although fig. 2 illustrates the third voltage source as a ground, the third voltage source may be a negative voltage source, and the temperature compensation circuit may output the negative voltage Vcom by adjusting circuit parameters.
In the embodiment of the invention, the power supply size of the first voltage source VDD1 can be adjusted according to the parameters of the NMOS transistor, and is mainly used for providing Vgs (voltage Vgs) on-state voltage for the NMOS transistor.
In the embodiment of the present invention, the power size of the second voltage source can be set according to the voltage size required by the display panel connected to the temperature compensation circuit, and when the connected display panel requires a larger Vcom voltage, VDD2 can be adjusted to realize a larger Vcom voltage output; when a smaller Vcom voltage is needed for the connected display panel, a smaller VDD2 can be set to achieve a smaller Vcom voltage output.
As shown in fig. 2, the temperature compensation circuit may further include a capacitor C, a first end of the capacitor C is connected to the output end of the second voltage division module, and a second end of the capacitor C is grounded.
In addition, although fig. 2 to 4 each illustrate a depletion-type MOS transistor as an example, an enhancement-type MOS transistor may be applied, and the present disclosure is not limited thereto. In a specific application process, parameters of the first voltage source VDD1 and the second voltage source VDD2 can be adjusted according to characteristics of the MOS transistors used.
Fig. 3 shows a circuit diagram of a second temperature compensation circuit in an exemplary embodiment of the present disclosure.
In the embodiment shown in fig. 3, the difference from the embodiment shown in fig. 2 is that the first terminal of the fourth resistor is no longer connected to VDD2, but to VDD 1; the source of the NMOS transistor is no longer grounded, but is connected to VDD2, where VDD2 is connected to a negative voltage. The rest is the same as the embodiment of fig. 2, and will not be described again.
By the temperature compensation circuit shown in fig. 3, a negative Vcom voltage output with a smaller absolute value can be realized, for example, the Vcom output voltage can be between-0.2V and-0.7V, VDD2 can be connected to an existing negative voltage power supply on the display panel, for example, -3V or-5V, which is not limited by the present disclosure.
Fig. 4 shows a circuit diagram of a third temperature compensation circuit in an exemplary embodiment of the present disclosure.
In the embodiment shown in fig. 4, a first terminal of the second resistor R2 is connected to the first voltage source VDD1 and the source S of the PMOS transistor, respectively, and a first terminal of the first resistor R1 is connected to a second terminal of the second resistor R2, and the connection point is the output terminal of the first voltage division module. The second end of the R1 is grounded, and the grid G of the PMOS tube is connected with the output end of the first voltage division module. The first end of the fourth resistor R4 is connected with the drain D of the PMOS tube. The second and third terminals of R4 are both connected to Vcom and the first terminal of R3. The second terminal of R3 is connected to a second voltage source VDD 2.
VDD2 in fig. 4 is a negative voltage, for example, -3V, but the present disclosure is not limited thereto.
If the resistance value of the thermistor R2 increases with the increase of the temperature, when the temperature rises, the absolute value of Vgs of the PMOS tube increases, Ids increases because the PMOS tube works in a saturation region, voltage drop on R3 increases, and Vcom increases when Vcom output is positive voltage; when Vcom is output as a negative voltage, the absolute value decreases, i.e., equivalently Vcom also increases.
If the resistance value of the thermistor R2 is reduced along with the increase of the temperature, the Vgs absolute value of the PMOS tube is reduced when the temperature rises, Ids is reduced because the PMOS tube works in a saturation region, the voltage drop on R3 is reduced, and Vcom is reduced when Vcom output is positive voltage; when Vcom is output as a negative voltage, the absolute value increases, i.e., equivalently, Vcom decreases.
By adjusting the parameters VDD1, VDD2, PMOS transistor, R3, and R4, the temperature compensation circuit shown in fig. 4 can output a positive Vcom voltage or a negative Vcom voltage.
The temperature compensation circuit provided by the embodiment of the invention can realize compensation output of Vcom in different ranges along with temperature change through parameter adjustment of each component in the circuit, thereby enabling an LCD panel to achieve better display effect at different temperatures.
The embodiment of the invention also provides a display device which comprises the temperature compensation circuit in the embodiment.
The display device may be a display device such as a liquid crystal display, an electronic paper, an OLED, a polymer light-emitting diode (PLED), and any product or component with a display function including the display device, such as a television, a digital camera, a mobile phone, and a tablet computer.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (7)
1. A temperature compensation circuit, comprising:
the first voltage division module comprises a thermistor and a first resistor, the input end of the first voltage division module is connected to a first voltage source, and the first voltage source is a positive voltage source;
the output end of the second voltage division module is connected to the voltage output end of the temperature compensation circuit, and the input end of the second voltage division module is connected to a second voltage source; wherein the second voltage division module comprises a third resistor and a fourth resistor; the fourth resistor is a sliding resistor;
the MOS tube is respectively connected with the first voltage division module and the second voltage division module; the thermistor, the fourth resistor and the third resistor are matched with the impedance of the MOS tube, so that the MOS tube is in a saturation region in a working state.
2. The temperature compensation circuit of claim 1, wherein the second voltage source is a positive voltage source and the MOS transistor is an NMOS transistor, wherein,
the first end of the first resistor is connected to the output end of the first voltage source;
the second end of the first resistor and the first end of the thermistor are both connected to the grid of the NMOS tube;
the second end of the thermistor and the source electrode of the NMOS tube are connected to a third voltage source;
a first end of the fourth resistor is connected to an output end of the second voltage source;
the second end and the third end of the fourth resistor are connected to the first end of the third resistor;
the second end of the third resistor is connected to the drain electrode of the NMOS tube.
3. The temperature compensation circuit of claim 1, wherein the second voltage source is a negative voltage source and the MOS transistor is an NMOS transistor, wherein,
a first end of the first resistor and a first end of the fourth resistor are connected to an output end of the first voltage source;
the second end of the first resistor and the first end of the thermistor are both connected to the grid of the NMOS tube;
the second end of the thermistor is connected to a third voltage source;
the second end and the third end of the fourth resistor are connected to the first end of the third resistor;
the second end of the third resistor is connected to the drain electrode of the NMOS tube;
and the source electrode of the NMOS tube is connected to the output end of the second voltage source.
4. The temperature compensation circuit of claim 1, wherein the second voltage source is a negative voltage source and the MOS transistor is a PMOS transistor, wherein,
the first end of the thermistor and the source electrode of the PMOS tube are both connected to the output end of the first voltage source;
the second end of the thermistor and the first end of the first resistor are both connected to the grid of the PMOS tube;
the second end of the first resistor is connected to a third voltage source;
the first end of the fourth resistor is connected to the drain electrode of the PMOS tube;
the second end and the third end of the fourth resistor are connected to the first end of the third resistor;
the second end of the third resistor is connected to the output end of the second voltage source.
5. The temperature compensation circuit of any one of claims 1 to 4, wherein the resistance of the thermistor increases with increasing temperature.
6. The temperature compensation circuit of any one of claims 1 to 4, wherein the resistance of the thermistor decreases with increasing temperature.
7. A display device comprising the temperature compensation circuit according to any one of claims 1 to 6.
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| CN201810041585.XA CN108287587B (en) | 2018-01-16 | 2018-01-16 | Temperature compensation circuit and display device |
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| CN201810041585.XA CN108287587B (en) | 2018-01-16 | 2018-01-16 | Temperature compensation circuit and display device |
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| CN108287587B true CN108287587B (en) | 2021-01-26 |
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| US6437634B1 (en) * | 1997-11-27 | 2002-08-20 | Nec Corporation | Semiconductor circuit in which distortion caused by change in ambient temperature is compensated |
| KR100937039B1 (en) * | 2007-11-12 | 2010-01-15 | 한국전자통신연구원 | A Bias Circuit having Compensation Capability for Threshold Voltage and Temperature Variations and Amplifier using the same |
| CN201846321U (en) * | 2010-11-16 | 2011-05-25 | 深圳市富满电子有限公司南山分公司 | Segmented temperature compensation reference circuit |
| CN102082416A (en) * | 2010-12-15 | 2011-06-01 | 深圳茂硕电源科技股份有限公司 | Method for realizing input undervoltage and over-temperature protection based on over voltage protection (OVP) function of Boost control chip |
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