CN108285613A - 具有无机填料的散热基板 - Google Patents
具有无机填料的散热基板 Download PDFInfo
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- CN108285613A CN108285613A CN201710018154.7A CN201710018154A CN108285613A CN 108285613 A CN108285613 A CN 108285613A CN 201710018154 A CN201710018154 A CN 201710018154A CN 108285613 A CN108285613 A CN 108285613A
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- 239000011256 inorganic filler Substances 0.000 title claims abstract description 52
- 229910003475 inorganic filler Inorganic materials 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 title claims abstract description 28
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- 239000011347 resin Substances 0.000 claims abstract description 24
- 230000004048 modification Effects 0.000 claims abstract description 9
- 238000012986 modification Methods 0.000 claims abstract description 9
- 239000004744 fabric Substances 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011889 copper foil Substances 0.000 claims abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 57
- 239000003822 epoxy resin Substances 0.000 claims description 12
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- 239000003795 chemical substances by application Substances 0.000 claims description 7
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical class [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims description 2
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 2
- 235000006748 manganese carbonate Nutrition 0.000 claims description 2
- 239000011656 manganese carbonate Substances 0.000 claims description 2
- 229940093474 manganese carbonate Drugs 0.000 claims description 2
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 claims description 2
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
- 239000005751 Copper oxide Substances 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 229910052808 lithium carbonate Inorganic materials 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 230000005389 magnetism Effects 0.000 abstract description 4
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
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- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
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- -1 silicon Alkane Chemical class 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical class CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- 150000004941 2-phenylimidazoles Chemical class 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical group C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 241000143437 Aciculosporium take Species 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical compound C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- DLIJPAHLBJIQHE-UHFFFAOYSA-N butylphosphane Chemical compound CCCCP DLIJPAHLBJIQHE-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- LITYQKYYGUGQLY-UHFFFAOYSA-N iron nitric acid Chemical compound [Fe].O[N+]([O-])=O LITYQKYYGUGQLY-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- CLZXIZBEKRTINT-UHFFFAOYSA-N n-methylmethanamine;2-methylphenol Chemical compound CNC.CC1=CC=CC=C1O CLZXIZBEKRTINT-UHFFFAOYSA-N 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical class [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
- C08K13/06—Pretreated ingredients and ingredients covered by the main groups C08K3/00 - C08K7/00
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/02—Ingredients treated with inorganic substances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
- C08K2003/382—Boron-containing compounds and nitrogen
- C08K2003/385—Binary compounds of nitrogen with boron
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- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
Abstract
本发明公开了一种具有无机填料的散热基板，包含：多个胶片，该多个胶片中的各该胶片由下至上依序层状堆栈，且各该胶片由一树脂组成物包覆一玻璃纤维布所形成；及一铜箔，其压合于该多个胶片上，其中，该树脂组成物中含有表面磁性改质的无机填料，并沿着胶片的厚度方向进行取向。
Description
技术领域
本发明是有关一种具有无机填料的散热基板，尤其是指胶片所用的树脂组成物中含有表面磁性改质的无机填料，并沿着胶片的厚度方向进行取向。
背景技术
发光二极管(LED)具有低耗能、省电、寿命长、耐用等优点，因而被各方看好将取代传统照明成为未来照明光源。然而，随着功率增加，LED所产生电热流的废热无法有效散出，导致发光效率严重下降。LED发光效率会随着使用时间及次数而降低，而过高的接面温度则会加速LED发光效率衰减，故散热成LED发展的一大课题。
选择高散热基板可改善LED的散热。当单位热流密度较高时，LED散热基板主要采用金属基板及陶瓷基板两类强化散热，其中金属基板制程尚需多一道绝缘层处理。而且，为了提高金属基板的导热性，会在金属基板的绝缘树脂中添加无机填料，例如陶瓷粉末。
然而，在由分散有陶瓷粉末的树脂所构成的绝缘层中，具有导热性是由于陶瓷粉末的偶然连续性造成，因而，为了获得目标导热性，必须增加陶瓷粉末的含量。然而，随着陶瓷粉末含量增加，陶瓷自身的脆性使其成型比较困难，而且当金属基板需要钻孔时，钻孔的困难度是比较高的，又钻头的损耗也因而提高。
发明内容
本发明之一目的，在于提供一种具有无机填料的散热基板，于胶片中添加表面披覆有铁氧化物的无机填料，并在胶片成形时施加磁场，使表面披覆有铁氧化物的无机填料沿胶片的厚度方向进行取向，厚度方向的热导率进一步提升。
为了达成上述目的，本发明提供一种具有无机填料的散热基板，包含：多个胶片，该多个胶片中的各该胶片由下至上依序层状堆栈，且各该胶片由一树脂组成物包覆一玻璃纤维布所形成；及一铜箔，其系压合于该多个胶片上，其中，该树脂组成物中含有表面磁性改质的无机填料，并沿着胶片的厚度方向进行取向。
本发明的一态样，此树脂组成物中的无机填料为片状或针状，无机填料例如氧化铝或是氮化硼等无机填料。此无机填料的表面上具有铁氧化物或经改质的铁氧化物的覆膜。该铁氧化物材料，主要系选自由氧化铁(Fe2O3)、氧化镍(NiO)、氧化锰(MnO2)、碳酸锰、氧化铜(CuO)、氧化锌(ZnO)、氧化锂(Li2O)、碳酸锂(Li2CO3)、氧化镁(MgO)所组成的群组的一种材料，经实验配比后制作而成。另外，该铁氧化物可以使用偶合剂(Coupling Agent)如硅烷(Silane)或钛酸酯(Titanate)进行改质，经过偶合剂改质过的铁氧化物可以帮助其添加于环氧树脂时的溶解性。该含有此改质铁氧化物的无机填料，经过一磁场后，可使改质的无机填料具有方向性，而有助于导热特性。树脂为热固性树脂，例如环氧树脂。
附图说明
图1显示沿胶片的厚度方向施加磁场的示意图。
图2A为表面披覆有铁氧化物的氧化铝未经磁化的扫描式电子显微镜的截面影像。
图2B为表面披覆有铁氧化物的氧化铝经磁化的扫描式电子显微镜的截面影像。
其中附图标记：
10磁场
具体实施方式
有关本发明的详细说明及技术内容，配合图式说明如下，所附图式仅提供参考与说明用，并非用来对本发明加以限制者。
本发明的一实施例，具有无机填料的散热基板，包含：多个胶片，该多个胶片中的各该胶片由下至上依序层状堆栈，且各该胶片由一树脂组成物包覆一玻璃纤维布所形成；及一铜箔，其压合于该多个胶片上，其中，该树脂组成物中含有表面磁性改质的无机填料，并沿着胶片的厚度方向进行取向。
本实施例的散热基板的胶片所用的树脂可以是热固性树脂，例如环氧树脂。本实施例的散热基板的胶片，所含无机填料是用氧化铝。且氧化铝有经过表面改质。
无机填料例如是氧化铝或氮化硼。此无机填料的表面上在经过铁氧化物的改质后具有铁氧化物的覆膜。可以使氧化铝的整个表面由铁氧化物覆盖，也可以使仅其表面的一部分由铁氧化物覆盖。
此树脂组成物中的无机填料为片状或针状。氧化铝或氮化硼本质上所具备不错的热导率，片状或针状的形状，更是有助于热传导路径的形成。
改质无机填料，例如改质氧化铝，可在其表面上披覆铁氧化物。因已知铁氧化物作为具有强磁性和绝缘性的材料。铁氧化物的附着量，即覆膜的重量相对于表面披覆有铁氧化物的无机填料的重量为例如1-50重量％。适量的铁氧化物附着在无机填料的表面上时，能够充分得到使取向性提高的效果，并且使铁氧化物(覆膜)与无机填料的密合性也保持良好。铁氧化物的附着量的较佳范围例如为10-30重量％。
接着，说明本实施例的表面披覆有铁氧化物的无机填料的制造方法。
取100g氧化铝，加入去离子水中形成溶液A。取20g硝酸铁粉末、5g硝酸镍与微量硝酸锌混合物粉末，加入去离子水中形成溶液B，将溶液A与B以搅拌器混合形成混合液C，加热混合液C使其稳定于80℃，将氢氧化钠水溶液加入混合液D溶液，调整溶液至碱性，搅拌30分钟，升温至800℃后降为室温，分别得磁性导热材料样品。以振动式磁力机(lakeshoreMODEL 7304)量测样品的饱和磁化量，为1.7emu/g。
本实施例的散热基板的胶片所用的树脂可以是热固性树脂，例如环氧树脂。本比较例的散热基板的胶片，所含无机填料是用氧化铝。但是，氧化铝无表面改质。
接着，说明本比较例及实施例的散热基板的制造方法。本案树脂组成物包含20-25wt％环氧树脂、6-9wt％硬化剂、0.05-0.2％硬化促进剂及50-65％无机填料。环氧树脂可为任何化合物，其每分子具有至少两个环氧基，包括单体、低聚物及聚合物，而典型的例子包括联苯基型环氧树脂，双酚型环氧化合物，如双酚A环氧树脂，双酚F环氧树脂及双酚S环氧树脂，酚酚醛清漆环氧树脂，甲酚酚醛清漆环氧树脂，及其卤化产物，如溴化双酚A环氧树脂。
硬化剂未被特别限制，而较佳的例子是酚树脂型硬化剂如酚酚醛清漆环氧树脂，甲酚酚醛清漆环氧树脂，及二环戊二烯改质的酚树脂。硬化促进剂包括三级胺类，如1,8-二氮杂二环(5.4.0)十一烯-7、三乙二胺、二甲胺、二甲胺乙醇及参(二甲胺甲基)酚，咪唑类，如2-甲基咪唑、2-苯基咪唑及2-十七基咪唑，有机膦类，如三丁基膦、二苯基膦及苯基膦，四元取代的鏻四元取代的硼酸盐类，如四苯基鏻四苯基硼酸盐、四苯基鏻乙基三苯基硼酸盐及四丁基鏻四丁基硼酸盐，及四苯基硼盐类，如2-乙基-4-甲基咪唑四苯基硼酸盐及四苯基硼酸盐。无机填料例如是氧化铝或氮化硼。
根据以下配方500g环氧树脂(CNE-200)、19g耐燃硬化剂(DOPO-Dicy)、200g DMF、150g表面披覆有铁氧化物的无机填料及0.05g的2-甲基咪唑(2-MI(10％))，将耐燃硬化剂(DOPO-Dicy)溶于DMF中，再与环氧树脂及表面披覆有铁氧化物的无机填料混合均匀，再利用丙酮(acetone)调整至适当粘度，形成生胶水(Varnish)，先于170℃的电热板上确认胶化时间，并将胶化时间的2/3定为含浸时间。配合玻布将生胶水于室温下进行含浸，然后用热风循环风箱在165℃下进行烘干制成胶片(Prepreg)。
在胶片进烘箱固化前，沿胶片的厚度方向施加磁场，以使表面披覆有铁氧化物的无机填料沿胶片的厚度方向进行取向。通过沿胶片的厚度方向施加磁场，使表面披覆有铁氧化物的无机填料，以表面披覆有铁氧化物的无机填料的面方向与磁场的方向平行的方式进行取向。通过该取向而得到提高厚度方向的热导率的效果。
以沿与胶片垂直的方向施加磁场10的方式，配置磁铁来进行磁场10的施加即可。例如，可以施加磁通密度为0.3T(特斯拉)以上、较佳2T以上的磁场。磁通密度的上限没有特别限定，例如为15T。为了利用磁场维持表面披覆有铁氧化物的无机填料的取向，可以在施加磁场的同时在低于引起酰亚胺化的温度下进行干燥而将溶剂除去。
图1显示沿胶片的厚度方向施加磁场的示意图。实验进行时，可改变玻璃纤维布的传输速度，由SEM、XRD及导热系数得知配向度。
图2A为无机填料氧化铝未经磁化的扫描式电子显微镜的截面影像。图2B为无机填料氧化铝经磁化的扫描式电子显微镜的截面影像。如图2B所示，对于实施例的胶片而言，无机填料具有沿预浸胶片的厚度方向的顺向性。如图2A所示，对于比较例的胶片而言，无机填料具有沿胶片的面方向的顺向性。
最后，于185℃下进行热硬化压合，其热压压力为20kg/cm2，而升温过程是分段进行，首先由35℃开始经11分钟升温，达85℃后维持20分钟，接着经45分钟升温后，达185℃并维持120分钟，完成热硬化压合程序。
以下说明本案实施例与比较例导热值(Thermal Conductivity)的比较：
表1
表1中树脂组成物包含22wt％环氧树脂、8wt％硬化剂、0.1wt％硬化促进剂及65wt％无机填料。由表1可看出表面披覆有经硅烷改质的铁氧化物的氧化铝经磁化的实施例1具有K值1.423(W/mK)，表面披覆有未经硅烷改质的铁氧化物的氧化铝经磁化的实施例2具有K值1.415(W/mK)，略逊于实施例1。此外，表面披覆有经硅烷改质的铁氧化物的氧化铝未经磁化的比较例1具有K值1.227(W/mK)，表面未披覆有铁氧化物的氧化铝且未经磁化的比较例2具有K值1.223(W/mK)，略逊于比较例1。综上所述，使用含有表面披覆经偶合剂改质且经磁化的铁氧化物的无机填料的树脂组成物的胶片制成的散热基板的导热值可获提升。
Claims (7)
1.一种具有无机填料的散热基板，其特征在于，包括:
多个胶片，该多个胶片中的各该胶片由下至上依序层状堆栈，且各该胶片由一树脂组成物包覆一玻璃纤维布所形成；及
一铜箔，其压合于该多个胶片上，
其中，该树脂组成物中含有磁性改质的无机填料，并沿着胶片的厚度方向进行取向。
2.如权利要求1的具有无机填料的散热基板，其特征在于，该无机填料为氧化铝或氮化硼。
3.如权利要求1的具有无机填料的散热基板，其特征在于，该无机填料为片状或针状。
4.如权利要求1的具有无机填料的散热基板，其特征在于，该无机填料表面上具有铁氧化物的覆膜。
5.如权利要求4的具有无机填料的散热基板，其特征在于，该铁氧化物是选自由氧化铁、氧化镍、氧化锰、碳酸锰、氧化铜、氧化锌、氧化锂、碳酸锂及氧化镁所组成的群组的一种材料。
6.如权利要求4或5的具有无机填料的散热基板，其特征在于，该铁氧化物是经硅烷或钛酸酯改质。
7.如权利要求1的具有无机填料的散热基板，其特征在于，该树脂组成物包含20-25wt％环氧树脂、6-9wt％硬化剂、0.05-0.2％硬化促进剂及50-65％无机填料。
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