CN108281480B - Device for simultaneously generating ionization and displacement defect signals and preparation method thereof - Google Patents
Device for simultaneously generating ionization and displacement defect signals and preparation method thereof Download PDFInfo
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- 230000007547 defect Effects 0.000 title claims abstract description 32
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 17
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000191 radiation effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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Abstract
The invention provides a device for simultaneously generating ionization and displacement defect signals and representing the formation and annealing states of different types of particle irradiation induced ionization and displacement defects and a preparation method thereof, belonging to the field of nuclear science and technology. The invention comprises a collector region, a base region, n emitter regions, an emitter, a base and a collector; the doping concentration of the collector region is less than 1E15/cm3(ii) a The distance d between the long edge of the outer edge of the base region and the outer edge of the collector region ranges from 0.1 to 300 mu m, and the distance e between the wide edge of the outer edge of the base region and the outer edge of the collector region ranges from 0.1 to 300 mu m; the doping concentration of the base region is 1E15/cm3～1E17/cm3(ii) a The ratio of the long side a to the wide side b of the emitting region is in the range of 500: 1-1: 500, and the depth of a diffusion junction is between 0.1 and 3.0 mu m; the distance between two adjacent emitting areas is not less than a/2 and not more than 5 a; the doping concentration of the emitting region is 5E15/cm3～1E20/cm3。
Description
Technical Field
The invention belongs to the field of nuclear science and technology, and particularly relates to a device capable of generating ionization and displacement defect signals simultaneously and a preparation method thereof.
Background
In the in-orbit service process of the spacecraft, the spacecraft can be influenced by various space environments, wherein the influence of the space charged particle radiation environment is the most prominent. There are a significant number of energetic charged particles in the universe. A spatially energetic particle environment generally means that the energy of an electron is greater than 40keV, the energy of a proton or neutron is greater than 1MeV, and the energy of a heavy ion is greater than 1 MeV/u. The energy of high-energy charged particles in the actual space radiation environment reaches more than dozens of keV to hundreds of MeV, and serious threat can be caused to the in-orbit spacecraft. High-energy charged particle radiation easily damages electronic devices on the spacecraft, so that the service life and reliability of the spacecraft in orbit are reduced. The space high-energy charged particle source mainly comprises three types of earth radiation zone, Galaxy cosmic ray and solar cosmic ray.
Most charged particles (such as protons, electrons, and heavy ions) in a spatial radiation environment can produce both ionizing radiation effects and displacement radiation effects. When these charged particles are incident on a material or device, ionization and displacement damage effects are generally generated simultaneously, and these two effects present a mechanism of mutual competition. How to characterize and detect the actual ionizing and displacement radiation damage capability of these particles is a difficult and hot problem in current radiation effect studies.
Disclosure of Invention
The invention provides a device for simultaneously generating ionization and displacement defect signals and a preparation method thereof, aiming at ionization defect and displacement defect characteristics and an influence mechanism, and the device is used for separating and detecting radiation damage capability of charged particles of different types to represent irradiation induced ionization and displacement defect forming and annealing states of the particles of different types.
The invention relates to a device for simultaneously generating ionization and displacement defect signals, which comprises a collector region, a base region, n emitter regions, an emitter, a base and a collector;
the collector region is arranged at the periphery of the base region, and the doping concentration of the collector region is less than 1E15/cm3；
The outer edge of the base region is rectangular, the distance d between the long edge of the outer edge of the base region and the outer edge of the collector region ranges from 0.1 to 300 mu m, and the distance e between the wide edge of the outer edge of the base region and the outer edge of the collector region ranges from 0.1 to 300 mu m;
the doping concentration of the base region is 1E15/cm3～1E17/cm3；
Forming n rectangular emitter regions by taking the central coordinate of the base region as the center, wherein n is a positive integer greater than 1;
the ratio of the long side a to the wide side b of the emitting region is in the range of 500: 1-1: 500, and the depth of a diffusion junction is between 0.1 and 3.0 mu m; the distance between two adjacent emitting areas is not less than a/2 and not more than 5 a;
the doping concentration of the emitting region is 5E15/cm3～1E20/cm3；
The emitter is simultaneously led out from the tops of the n emitter regions, and the base is led out from the top of the base region;
and the collector is led out from the bottom of the collector region.
Preferably, isolation regions are arranged among the collector region, the base region and the n emitter regions.
Preferably, the element doped in the collector region is boron element.
Preferably, the element doped in the base region is boron element.
Preferably, the element doped in the emitting region is phosphorus.
The invention also provides a preparation method of the device for simultaneously generating ionization and displacement defect signals, which comprises the following steps:
the method comprises the following steps: preparing a substrate of a silicon material;
step two: preparing a buried layer on a substrate;
step three: carrying out first photoetching, removing all silicon dioxide, and then epitaxially growing a layer of doped silicon to obtain an epitaxial layer which is a collector region;
step four: growing a layer of silicon dioxide on the epitaxial layer, then carrying out second photoetching, etching an isolation region among the collector region, the base region and the emitter region on the epitaxial layer, then pre-depositing or ion-injecting corresponding impurity elements in the isolation region, and then diffusing or annealing to push the impurities to a set distance;
step five: preparing a heavily doped N-type contact window, carrying out third photoetching, etching a collector, injecting or diffusing corresponding doping elements, and annealing;
step six: performing fourth photoetching on the epitaxial layer to etch a base region, injecting corresponding doping elements into the base region, and annealing and diffusing;
step seven: growing a layer of oxide on the base region, carrying out fifth photoetching to etch the emitter region, then injecting corresponding doping elements into the emitter region, and annealing and diffusing;
step eight: after silicon dioxide is deposited on the base region and the emitter region, carrying out sixth photoetching, etching a P-type contact window and an N-type contact window on the base region and the emitter region respectively, and etching a base electrode and an emitter electrode;
step nine: and performing seventh photoetching to form interconnection metal wiring, and finally growing a passivation layer to package the device.
The features mentioned above can be combined in various suitable ways or replaced by equivalent features as long as the object of the invention is achieved.
The invention has the beneficial effects that: charged particle irradiation can generate ionization damage and displacement damage in materials and devices, and respectively induce and generate electron-hole pairs and interstitial atom-vacancy pairs. The electrons, holes, interstitial atoms and vacancies have strong activity at room temperature, and most of the electrons, holes, interstitial atoms and vacancies have recombination action. Electron/hole pairs, interstitial atom/vacancy pairs that do not recombine will eventually form stable defects. These stable defects can have a significant impact on the performance and reliability of the materials and devices. Different types of devices have different sensitivities to radiation damage, MOS process devices are sensitive to ionization damage, photoelectric devices are sensitive to displacement damage, and bipolar process devices are sensitive to both ionization and displacement damage. In order to simultaneously detect ionization and displacement defects, the invention is designed and prepared based on a bipolar process, reserves most process steps and parameters in the traditional bipolar process technology, and only modifies specific parameters and processes of a plurality of processes, so that the manufacturing process steps are very simple. However, the device structure obtained by the preparation method can simultaneously detect ionization and displacement defect signals, and is easy to distinguish the radiation damage capability of different types of particles.
The invention can greatly reduce the test cost, improve the safety of test operators and shorten the test time, and has great significance for ground simulation test and research of space environment effect of materials and devices. The method has obvious advantages and wide application prospect in the research of space environment effect and the application of anti-irradiation reinforcement technology.
Drawings
FIG. 1 is a schematic diagram of a device for simultaneously generating ionization and displacement defect signals according to the present invention;
FIG. 2 is a signal of irradiation of an ionized defect by a Co-60 source;
FIG. 3 is a signal of ionization defects and displacement defects by 1MeV electron irradiation;
FIG. 4 shows the 35MeV Si ion irradiation displacement defect signal.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
The present embodiment is described with reference to fig. 1, and the device for simultaneously generating ionization and displacement defect signals according to the present embodiment includes a collector region, a base region, n emitter regions, an emitter, a base, and a collector;
the collector region is arranged at the periphery of the base region, and the doping concentration of the collector region is less than 1E15/cm3；
The outer edge of the base region is rectangular, the distance d between the long edge of the outer edge of the base region and the outer edge of the collector region ranges from 0.1 to 300 mu m, and the distance e between the wide edge of the outer edge of the base region and the outer edge of the collector region ranges from 0.1 to 300 mu m;
the doping concentration of the base region is 1E15/cm3～1E17/cm3；
Forming n rectangular emitter regions by taking the central coordinate of the base region as the center, wherein n is a positive integer greater than 1;
the ratio of the long side a to the wide side b of the emitting region is in the range of 500: 1-1: 500, and the depth of a diffusion junction is between 0.1 and 3.0 mu m; the distance between two adjacent emitting areas is not less than a/2 and not more than 5 a;
the doping concentration of the emitting region is 5E15/cm3～1E20/cm3；
The emitter is simultaneously led out from the tops of the n emitter regions, and the base is led out from the top of the base region;
and the collector is led out from the bottom of the collector region.
Isolation regions are arranged among the collector region, the base region and the n emitter regions.
The element doped in the collector region is boron or phosphorus, the element doped in the base region is boron or phosphorus, and the element doped in the emitter region is boron or phosphorus.
The embodiment also needs to oxidize the device based on a mixed mode of dry oxygen and wet oxygen, so as to ensure that the thickness of the dry oxygen is between 1nm and 10nm, the thickness of the wet oxygen is between 200nm and 200 mu m, and the ratio of the oxidation time of the dry oxygen to the oxidation time of the wet oxygen is not more than 1/10.
The device according to the present embodiment performs irradiation tests based on different types of particles. And when the device is irradiated to a certain irradiation dose or irradiation fluence, moving the device to a deep energy level transient spectrometer DLTS. And respectively detecting ionization and displacement defect distribution information at the emitter junction and the collector junction by using a DLTS (digital Living setup transform system) technology so as to represent ionization and displacement damage capacities of different types of particles. If the time interval between the completion of irradiation and the DLTS detection is not more than 50 minutes under the normal temperature condition; if the time interval between the completion of irradiation and the detection of DLTS is not more than 500 hours under 77K liquid nitrogen storage conditions.
The method for manufacturing the device according to this embodiment includes the steps of:
the method comprises the following steps: preparing a substrate of a silicon material;
step two: preparing a buried layer on a substrate;
step three: carrying out first photoetching, removing all silicon dioxide, and then epitaxially growing a layer of doped silicon to obtain an epitaxial layer which is a collector region; the entire device is fabricated on this epitaxial layer.
Step four: growing a layer of silicon dioxide on the epitaxial layer, then carrying out second photoetching, etching an isolation region among the collector region, the base region and the emitter region on the epitaxial layer, then pre-depositing or ion-injecting corresponding impurity elements in the isolation region, and then diffusing or annealing to push the impurities to a set distance;
step five: preparing a heavily doped N-type contact window, carrying out third photoetching, etching a collector, injecting or diffusing corresponding doping elements, and annealing;
step six: performing fourth photoetching on the epitaxial layer to etch a base region, injecting corresponding doping elements into the base region, and annealing and diffusing;
step seven: growing a layer of oxide on the base region, carrying out fifth photoetching to etch the emitter region, then injecting corresponding doping elements into the emitter region, and annealing and diffusing;
step eight: after silicon dioxide is deposited on the base region and the emitter region, carrying out sixth photoetching, and etching a P-type contact window and an N-type contact window on the base region and the emitter region respectively; the metal aluminum is sputtered in the contact hole to form ohmic contact, and a base electrode and an emitter electrode are obtained;
step nine: and performing seventh photoetching to form interconnection metal wiring, and finally growing a passivation layer to package the device.
Based on the mode, the NPN type device structure unit is designed and prepared. The doping concentration of the collector region (N-type region) is prepared to be 3E14/cm3. On this basis, boron is diffused into the base region. The length-width ratio of the base region is 4:3, and the junction depth is 2 mu m; the distance from the long edge to the edge of the collector region is 5 micrometers, and the distance from the wide edge to the edge of the collector region is 3 micrometers; the doping concentration of boron element in the base region is 4E15/cm3. After the base region diffusion is finished, phosphorus element diffusion of an emitter region is carried out, 4 rectangular emitter regions are diffused together, the length-width ratio of the emitter region is 3:2 (wherein the length is 6 micrometers, the width is 4 micrometers), and the junction depth is 0.8 micrometers; the direct distance between the emitting area and the emitting area is 6 μm; the phosphorus doping concentration of the emitting region is 1E17/cm3. When the oxidation was performed thereafter, the time for dry oxygen was 1 minute and the time for wet oxygen was 90 minutes. Finally, leading the emitter and the base out of the surface of the chip; the collector is led out from the back of the chip and the silicon substrate and is directly connected with the package.
After the production of the structural unit of the device is finished, the irradiation test work is started. Co-60 source, 1MeV electron and 35MeV Si ion are selected respectively to carry out irradiation test research. When the irradiation test is completed, the sample is rapidly (within 1 minute) moved to a liquid nitrogen environment, and DLTS test work is performed within 100 minutes. The test results of the DLTS are respectively shown in FIGS. 2-4. As can be seen from the figure, the Co-60 source irradiation only generates ionization defect signals, the 1MeV electron irradiation can generate ionization defect signals and can induce displacement defect signals, and the 35MeV Si ion irradiation mainly generates displacement defect signals. Therefore, the device structure can well characterize the radiation damage capability of different types of particles.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (6)
1. A device for simultaneously generating ionization and displacement defect signals is characterized by comprising a collector region, a base region, n emitter regions, an emitter, a base and a collector;
the collector region is arranged at the periphery of the base region, and the doping concentration of the collector region is less than 1E15/cm3；
The outer edge of the base region is rectangular, the distance d between the long edge of the outer edge of the base region and the outer edge of the collector region ranges from 0.1 to 300 mu m, and the distance e between the wide edge of the outer edge of the base region and the outer edge of the collector region ranges from 0.1 to 300 mu m;
the doping concentration of the base region is 1E15/cm3~1E17/cm3；
Forming n rectangular emitter regions by taking the central coordinate of the base region as the center, wherein n is a positive integer greater than 1;
the ratio of the long side a to the wide side b of the emitting region is in the range of 500: 1-1: 500, and the depth of a diffusion junction is between 0.1 and 3.0 mu m; the distance between two adjacent emitting areas is not less than a/2 and not more than 5 a;
the doping concentration of the emitting region is 5E15/cm3~1E20/cm3；
The emitter is simultaneously led out from the tops of the n emitter regions, and the base is led out from the top of the base region;
and the collector is led out from the bottom of the collector region.
2. The device for simultaneously generating ionization and displacement defect signals according to claim 1, wherein isolation regions are arranged among the collector region, the base region and the n emitter regions.
3. The device for simultaneously generating ionization and displacement defect signals according to claim 1, wherein the collector region is doped with an element such as boron or phosphorus.
4. The device for simultaneously generating ionization and displacement defect signals according to claim 1, wherein the base region is doped with an element selected from the group consisting of phosphorus and boron.
5. The device for simultaneously generating ionization and displacement defect signals of claim 1, wherein the doped element of the emitter region is boron or phosphorus.
6. A method of manufacturing a device for simultaneously generating ionization and displacement defect signals as defined in claim 2, said method comprising the steps of:
the method comprises the following steps: preparing a substrate of a silicon material;
step two: preparing a buried layer on a substrate;
step three: carrying out first photoetching, removing all silicon dioxide, and then epitaxially growing a layer of doped silicon to obtain an epitaxial layer which is a collector region;
step four: growing a layer of silicon dioxide on the epitaxial layer, then carrying out second photoetching, etching an isolation region window between the collector region, the base region and the emitter region on the epitaxial layer, then predepositing or ion-injecting corresponding impurity elements in the isolation region window, and then diffusing or annealing to enable the impurities to be pushed to a set distance to form an isolation region;
step five: carrying out third photoetching to etch a collector window, injecting or diffusing corresponding N-type doping elements and annealing to form a heavily doped N-type contact window;
step six: performing fourth photoetching on the epitaxial layer to etch a base region window, injecting corresponding doping elements into the base region window, and annealing and diffusing to form a base region;
step seven: growing a layer of oxide on the base region, carrying out fifth photoetching to etch an emitter region window, then injecting corresponding doping elements into the emitter region window, and annealing and diffusing to form an emitter region;
step eight: after silicon dioxide is deposited on the base region and the emitter region, carrying out sixth photoetching, respectively etching a P-type contact window on the base region, etching an N-type contact window on the emitter region, and etching a base electrode window and an emitter electrode window;
step nine: and performing seventh photoetching to form interconnection metal wiring, and finally growing a passivation layer to package the device.
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| Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy;Xingji Li, et al;《IEEE TRANSACTIONS ON NUCLEAR SCIENCE》;20150410;第62卷(第2期);第555-564页 * |
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