CN108279320B - Preparation method of nano optical waveguide accelerometer based on Fano resonance - Google Patents
Preparation method of nano optical waveguide accelerometer based on Fano resonance Download PDFInfo
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- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
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Abstract
The invention relates to a Fano resonance-based nano optical waveguide accelerometer principle and a manufacturing process, in particular to a preparation method of a Fano resonance-based nano optical waveguide accelerometer, belonging to the fields of optics and micro-opto-electro-mechanical systems. The invention provides a method for preparing a nano optical waveguide accelerometer based on Fano resonance, which takes an SOI material as a sensitive element and a substrate material, and adopts an integrated nano optical waveguide process to provide the nano optical waveguide accelerometer based on the characteristics of high sensitivity of a high-Q optical micro-ring cavity and the advantages of high refractive index, strong optical limiting capability, small transmission loss, easy integration and the like of the SOI material, thereby realizing the optical accelerometer with high sensitivity and impact resistance through a force-light coupling effect.
Description
Technical Field
The invention relates to a Fano resonance-based nano optical waveguide accelerometer principle and a manufacturing process, in particular to a preparation method of a Fano resonance-based nano optical waveguide accelerometer, belonging to the fields of optics and micro-opto-electro-mechanical systems.
Background
An accelerometer (accelerometer) is an inertial device for measuring acceleration, and is a core measurement unit constituting an inertial navigation system independent of satellites. From automobile safety airbag system control and earthquake monitoring to inertial navigation systems of aviation, spacecrafts and unmanned automobiles, gravity sensing of mobile phones and tablet computers, automatic screen rotation functions and the like, the accelerometer becomes an essential part in daily life.
The traditional MEMS accelerometer is limited by environment, volume and self attributes, and cannot meet the requirement of modern industrial and military development on high-sensitivity accelerometers. The micro-opto-electro-mechanical accelerometer MOEMS can realize a system device which has higher response speed, higher integration level, stronger controllability, more outstanding noise suppression capability and anti-electromagnetic interference capability compared with the MEMS accelerometer device by virtue of the characteristics of light.
Disclosure of Invention
The invention provides a method for preparing a nano optical waveguide accelerometer based on Fano resonance, which takes an SOI material as a sensitive element and a substrate material, and adopts an integrated nano optical waveguide process to provide the nano optical waveguide accelerometer based on the characteristics of high sensitivity of a high-Q optical micro-ring cavity and the advantages of high refractive index, strong optical limiting capability, small transmission loss, easy integration and the like of the SOI material, thereby realizing the optical accelerometer with high sensitivity and impact resistance through a force-light coupling effect.
The invention is realized by adopting the following technical scheme: a preparation method of a nano optical waveguide accelerometer based on Fano resonance comprises the following steps:
firstly, preprocessing an SOI substrate: ultrasonically cleaning an SOI substrate, washing with deionized water, and drying by nitrogen;
secondly, high-temperature modification and annealing stress relief: baking the pretreated SOI substrate to remove water vapor on the substrate, increasing the adhesion between the photoresist and the substrate to make the photoresist more uniform, and simultaneously, annealing the substrate to eliminate stress after baking;
step three, glue homogenizing: coating photoresist on the top silicon of the SOI substrate;
step four, pre-baking: baking the SOI substrate after the photoresist is homogenized, fully evaporating the solvent in the photoresist, reducing the stress of the photoresist film during high-speed rotation and avoiding the delamination of the photoresist;
fifthly, photoetching: exposing the photoresist at the position of the electron beam alignment mark by using a mask;
sixthly, developing: placing the exposed SOI substrate into a developing solution for developing, and after the developing is finished, processing the substrate by using an oxygen plasma photoresist remover to remove the exposed photoresist and simultaneously enhance the adhesion of metal and the SOI substrate;
seventh step, electron beam evaporation and stripping: evaporating titanium and gold by using electron beams, then soaking in an acetone solution, then carrying out ultrasonic vibration, removing metals except the alignment mark in the acetone solution by using tweezers, and removing the rest photoresist to finally obtain a double-cross alignment mark pattern;
eighth step, photoresist homogenizing and electron beam lithography: glue is homogenized on the SOI substrate with the obtained double-cross alignment mark pattern, then electron beam exposure is carried out, and photoresist at the ring cavity and the waveguide structure is exposed;
ninth, developing: placing the exposed SOI substrate into a developing solution for developing, and after the developing is finished, using an oxygen plasma photoresist remover to process the substrate and remove the exposed photoresist;
step ten, ICP deep silicon etching: obtaining an annular cavity and a waveguide structure on the top layer silicon by adopting inductive coupling plasma etching, wherein the waveguide structure comprises a straight waveguide and two Y waveguides, the straight waveguide comprises a straight waveguide connected with the head parts of the two Y waveguides in a forked manner and straight waveguides respectively connected with the tail parts of the two Y waveguides, one straight waveguide connected with the head parts of the Y waveguides in a forked manner is coupled with the annular cavity, and the residual photoresist is removed;
step ten, photoresist homogenizing, photoetching, developing and ICP deep silicon etching are carried out, and gratings are obtained on the straight waveguides at the tail parts of the two Y waveguides 2;
and a twelfth step, photoresist homogenizing, photoetching and developing: photoresist is homogenized, photoetching and developing are carried out on the SOI substrate of the grating, and the photoresist on the periphery of the annular cavity is removed;
step thirteen, postbaking: after the development is finished, the SOI substrate is placed on a baking table for post-baking treatment, residual solvent in the developed photoresist is removed, and the adhesiveness and the etching resistance of the photoresist are improved;
fourteenth, etching ICP deep silicon: etching the top layer silicon at the periphery of the ring cavity by adopting inductively coupled plasma etching,
fifteenth step, RIE etching: etching the exposed middle silicon dioxide layer to form a detection mass block and a connecting beam (connecting the detection mass block and the etched middle silicon dioxide layer) which are positioned below the annular cavity, and forming a channel for etching bottom silicon;
sixthly, ICP isotropic deep silicon etching: the ICP isotropic deep silicon etching is used, the passivation process is removed, and SF is used6Gas enters the substrate silicon through the channel etched previously, the substrate silicon is etched, and therefore the connecting beam is released to become the silicon dioxide cantilever beam and form a suspended detection mass block, and photoresist is removed;
seventeenth step, integrating a conditioning circuit on the etched accelerometer structure by using an MEMS (micro-electromechanical systems) process to realize the preparation of the nano optical waveguide accelerometer, wherein the conditioning circuit comprises an electrode 5, an input unit 12 and a detection unit 7.
The basic principle of the accelerometer is as follows: after being incident from the straight waveguide grating on one side, the light source is divided into two paths through the Y waveguide, wherein one path of light is output through the straight waveguide; the other path of light is coupled with the ring cavity through the straight waveguide. When the eigenfrequency of the annular cavity is close to the frequency of the light transmitted in the straight waveguide, resonance is generated, and the spectrum of the other light path interferes with the spectrum of the resonance light path in the Y waveguide to generate Fano resonance; the annular cavity is arranged on the cantilever beam, when the system senses the external force, the coupling distance between the annular cavity and one path of light is slightly changed, the Fano resonance transmission spectral line in the transmission spectrum is obviously changed, and the acceleration value can be calculated by measuring the light intensity change of the transmission peak value.
Compared with the prior art, the invention has the following beneficial effects:
(1) the Fano resonance accelerometer provided by the invention has the advantages of compact structure, high response speed, high resolution and low power consumption, and particularly, the on-chip integrated ultra-high sensitivity accelerometer has important significance for the development of the integrated optical accelerometer technology.
(2) The invention provides a method for detecting acceleration with ultrahigh sensitivity, which can generate a very steep resonance transmission line by using a Fano resonance system, obviously change the output light intensity by small acceleration change and realize the detection of the acceleration with ultrahigh sensitivity.
(3) The device can be manufactured by an integrated nano optical waveguide process, has low cost, high performance, small loss, perfect compatibility with the traditional CMOS process, simple structure, easy manufacture and large-scale production potential.
Drawings
FIG. 1 is a schematic diagram of a structure of a nano-optical waveguide accelerometer of the present invention.
Fig. 2 is a schematic diagram of an SOI substrate.
FIG. 3 is a schematic diagram of a straight waveguide and grating structure according to the present invention.
FIG. 4 is a schematic diagram of a double cross alignment mark.
FIG. 5 is a schematic illustration of cantilever beam preparation.
Description of the drawings: 1-a straight waveguide; a 2-Y waveguide; 3-cantilever beam; 4-proof mass, 5-electrode; 6-ring cavity; 7-a detection unit; 8-top silicon; 9-a silicon dioxide layer; 10-base silicon; 11-a grating; 12-input unit.
Detailed Description
The accelerometer takes SOI material as a sensitive element and substrate material, the SOI material comprises top silicon 8, a middle silicon dioxide layer 9 and substrate silicon 10, and a straight waveguide 1, a Y waveguide 2, a ring cavity 6 and a grating 11 are formed on the top silicon 8; a cantilever beam 3 and a detection mass block 4 are formed on the middle silicon dioxide layer 9; the electrode 5, the input unit 12 and the detection unit 7 form a conditioning circuit. The straight waveguide 1, the cantilever 3, the ring cavity 6 and the grating 11 are integrated, and this integrated structure helps to reduce the loss caused by the coupling of the separate components to each other.
According to the manufacturing process of the accelerometer provided by the invention, the manufacturing process is mainly divided into two flows of preparing the annular resonant cavity and releasing the cantilever beam, and finally the two flows are connected together by using an alignment process, wherein the preparation of the annular resonant cavity comprises the following steps:
first, the SOI substrate is pretreated. Ultrasonic cleaning with acetone, isopropanol and anhydrous ethanol for 15min each time, cleaning for three times, washing with deionized water, and blowing with nitrogen.
And secondly, high-temperature modification and annealing are carried out to relieve stress. The SOI substrate is baked at the temperature of 100 ℃ to remove water vapor on the substrate, increase the adhesion between the photoresist and the substrate and make the photoresist uniform. And simultaneously, after baking is finished, annealing stress relief treatment is carried out on the substrate, wherein the annealing furnace is an RPT-500 rapid annealing furnace, and the time is 2 min.
And thirdly, homogenizing glue. Selecting AZ4620 positive photoresist, wherein the thickness of the photoresist is 1.2-1.5 μm, and the working parameters of the photoresist homogenizer are as follows: the spin coating time is 6-8s, and the rotating speed is 2000 rad/min.
And fourthly, prebaking. After the photoresist is homogenized, the SOI substrate is placed on a baking table at the temperature of 95 ℃ to be baked for 90s, the solvent in the photoresist is fully evaporated, the stress of the photoresist film during high-speed rotation is reduced, and the photoresist is prevented from being layered.
And fifthly, photoetching. The photoetching machine is an MA6 contact type domestic exposure machine, the broadband ultraviolet light source is 365-400 nm, and the resolution is 1 mu m. The exposure parameters are set as: 6.5s, exposure energy of 9mW/cm3。
And sixthly, developing. And (3) putting the exposed SOI substrate into a special developing solution for development for 60 s. And after the development is finished, the substrate is processed by using an oxygen plasma photoresist remover to remove the exposed photoresist and enhance the adhesion between the metal and the SOI substrate.
And seventhly, evaporating and stripping the electron beams. Titanium with the thickness of 30nm and gold with the thickness of 130nm are plated by electron beam evaporation, then the titanium and the gold are placed into an acetone solution to be soaked for 30min, then ultrasonic vibration is carried out for 3min, metal except for an alignment mark is removed by a pair of tweezers in the acetone solution, photoresist is removed, and finally a double-cross alignment mark pattern is obtained, as shown in figure 4.
And eighthly, photoresist homogenizing and electron beam photoetching. The photoresist is PMMA A4 positive photoresist, the spin coating thickness is 2 μm, and the spin coating parameters are set as follows: the rotating speed is 3000rad/min, and the spin coating time is 6-8 s. And then electron beam exposure is performed. The apparatus used was Japanese electronic JBX5500ZA, and the exposure dose was 600mJ/mm3The exposure time was 2 min.
And the ninth step, developing. And (3) putting the exposed SOI substrate into a special developing solution for development for 60 s. And after the development is finished, processing the substrate by using an oxygen plasma photoresist remover to remove the exposed photoresist.
And step ten, ICP deep silicon etching. Adopting inductively coupled plasma etching, wherein the used apparatus is HRM etching machine, and the etching gas is SF6The passivating protective gas is C4F8The etching parameters are as follows: ICP power of 2000W, radio frequency power of 10W, SF6The gas flow is 50sccm, and the etching time is 30s, so that the annular cavity 6 and the Y-shaped waveguide structure are obtained.
The eleventh step, photoresist uniformizing, photoetching, developing, ICP deep silicon etching, to obtain the grating 11 on the straight waveguides 1 at both ends, and the obtained grating structure is as shown in fig. 3.
The release of the cantilever beam mainly comprises the following steps:
and a twelfth step, photoresist homogenizing, photoetching and developing. The mask layer material is AZ4620, the spin coating thickness is about 20 μm, and the spin coating parameters are set as follows: the rotating speed is 3000rad/min, and the spin coating time is 6-8 s. And (3) carrying out exposure after the photoresist is homogenized, wherein the exposure parameters are as follows: 9mW/cm2The exposure time was 20 s. And immediately developing after exposure is finished, wherein the developing solution is a solution prepared from 25% TMAH and water in a ratio of 1:3, the developing time is 90s, and then the developer is washed by deionized water and dried by nitrogen.
And step thirteen, postbaking. After the development is finished, the SOI substrate is placed on a baking table for post-baking treatment, residual solvent in the developed photoresist is removed, and the adhesiveness and the etching resistance of the photoresist are improved. The postbaking temperature was 100 ℃ and the time was 90 s.
Fourteenth, etching ICP deep silicon: and etching away the top silicon layer on the periphery of the annular cavity 6 by adopting inductively coupled plasma etching.
Fifteenth step, RIE etching. The etching instrument used was Tegal903e, the etching rate was about 200nm/min, and the etching time was set to 30 min. And taking out the tray every 10min to perform cooling treatment so as to avoid over-high temperature to cause over-high consumption of the photoresist layer.
Sixthly, etching the ICP isotropic deep silicon. The ICP isotropic deep silicon etching is used, the passivation process is removed, and SF is used6The gas enters the substrate silicon through the previously etched channels, etching the silicon, thereby releasing the silicon dioxide cantilever 3 and proof mass 4. The etching parameters are set as follows: the speed is 0.6 μm/min, the time is 90s, and the preparation process flow is shown in FIG. 5.
Seventeenth step, integrating the conditioning circuit on the etched accelerometer structure by using an MEMS (micro-electromechanical systems) process to realize the preparation of the nano optical waveguide accelerometer.
Claims (1)
1. A preparation method of a nano optical waveguide accelerometer based on Fano resonance comprises the following steps:
firstly, preprocessing an SOI substrate: ultrasonically cleaning an SOI substrate, washing with deionized water, and drying by nitrogen;
secondly, baking modification and annealing stress relief: baking the pretreated SOI substrate to remove water vapor on the substrate, increasing the adhesion between the photoresist and the substrate to make the photoresist more uniform, and simultaneously, annealing the substrate to eliminate stress after baking;
step three, glue homogenizing: coating photoresist on the top silicon of the SOI substrate;
step four, pre-baking: baking the SOI substrate after the photoresist is homogenized, fully evaporating the solvent in the photoresist, reducing the stress of the photoresist film during high-speed rotation and avoiding the delamination of the photoresist;
fifthly, photoetching: exposing the photoresist at the position of the electron beam alignment mark by using a mask;
sixthly, developing: placing the exposed SOI substrate into a developing solution for developing, and after the developing is finished, processing the substrate by using an oxygen plasma photoresist remover to remove the exposed photoresist and simultaneously enhance the adhesion of metal and the SOI substrate;
seventh step, electron beam evaporation and stripping: evaporating titanium and gold by using electron beams, then soaking in an acetone solution, then carrying out ultrasonic vibration, removing metals except the alignment mark in the acetone solution by using tweezers, and removing the rest photoresist to finally obtain a double-cross alignment mark pattern;
eighth step, photoresist homogenizing and electron beam lithography: glue is homogenized on the SOI substrate with the obtained double-cross alignment mark pattern, then electron beam exposure is carried out, and photoresist at the ring cavity (6) and the waveguide structure is exposed;
ninth, developing: placing the exposed SOI substrate into a developing solution for developing, and after the developing is finished, using an oxygen plasma photoresist remover to process the substrate and remove the exposed photoresist;
step ten, ICP deep silicon etching: obtaining an annular cavity (6) and a waveguide structure on the top silicon by adopting inductive coupling plasma etching, wherein the waveguide structure comprises a straight waveguide (1) and two Y waveguides (2), the straight waveguide (1) comprises a straight waveguide connected with the head parts of the two Y waveguides (2) in a forked manner and straight waveguides respectively connected with the tail parts of the two Y waveguides (2), one straight waveguide connected with the head parts of the Y waveguides (2) in a forked manner is coupled with the annular cavity (6), and the residual photoresist is removed;
the tenth step, glue homogenizing, photoetching, developing and ICP deep silicon etching are carried out, and a grating (11) is obtained on the straight waveguide (1) at the tail parts of the two Y waveguides (2);
and a twelfth step, photoresist homogenizing, photoetching and developing: photoresist is homogenized, photoetched and developed on the SOI substrate of the obtained grating (11), and the photoresist on the periphery of the annular cavity (6) is removed;
step thirteen, postbaking: after the development is finished, the SOI substrate is placed on a baking table for post-baking treatment, residual solvent in the developed photoresist is removed, and the adhesiveness and the etching resistance of the photoresist are improved;
fourteenth, etching ICP deep silicon: etching away the top layer silicon at the periphery of the annular cavity (6) by adopting inductive coupling plasma etching;
fifteenth step, RIE etching: etching the exposed middle silicon dioxide layer to form a detection mass block (4) and a connecting beam which are positioned below the annular cavity (6), and forming a channel for etching bottom silicon;
sixthly, etching the ICP isotropic deep silicon: etching with ICP isotropic deep silicon to remove passivation process, and using SF6Gas enters the substrate silicon through the channel etched previously to etch the substrate silicon, therebyReleasing the connecting beam to form a silicon dioxide cantilever beam (3) and a suspended detection mass block (4), and removing the photoresist;
seventeenth step, integrating the conditioning circuit on the etched accelerometer structure by using an MEMS (micro-electromechanical systems) process to realize the preparation of the nano optical waveguide accelerometer.
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| CN112066975B (en) * | 2020-09-25 | 2021-05-14 | 中北大学 | Gyroscope and accelerometer integrated system based on double resonant cavities and preparation method thereof |
| CN114509845B (en) * | 2022-04-21 | 2022-07-12 | 苏州熹联光芯微电子科技有限公司 | Micro-ring resonator and electronic device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256198A (en) * | 2008-03-26 | 2008-09-03 | 北京航空航天大学 | Gleam dynamoelectric acceleration gauge based on laser feedback interference |
| CN101609101A (en) * | 2009-07-21 | 2009-12-23 | 浙江大学 | Micro-acceleration gauge based on the wave guide ring shaped resonant cavity of silica-based high speed electrooptical modulation |
| CN101871950A (en) * | 2010-06-21 | 2010-10-27 | 中北大学 | Optical cavity micro-accelerometer based on integrated input/output terminal |
| CN102483427A (en) * | 2009-06-15 | 2012-05-30 | 茨瓦内科技大学 | CMOS moems sensor device |
| CN105445494A (en) * | 2015-12-10 | 2016-03-30 | 中北大学 | MOEMS accelerometer based on planar ring cavity, and manufacturing method of the same |
| CN106443065A (en) * | 2016-07-01 | 2017-02-22 | 中国科学院上海微***与信息技术研究所 | High-precision wavelength shape acceleration sensor and preparation method thereof |
| WO2017055029A1 (en) * | 2015-09-29 | 2017-04-06 | Tronic's Microsystems | Device for attaching two elements such as a chip, an interposer and a support |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7518731B2 (en) * | 2005-02-01 | 2009-04-14 | Chian Chiu Li | Interferometric MOEMS sensor |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256198A (en) * | 2008-03-26 | 2008-09-03 | 北京航空航天大学 | Gleam dynamoelectric acceleration gauge based on laser feedback interference |
| CN102483427A (en) * | 2009-06-15 | 2012-05-30 | 茨瓦内科技大学 | CMOS moems sensor device |
| CN101609101A (en) * | 2009-07-21 | 2009-12-23 | 浙江大学 | Micro-acceleration gauge based on the wave guide ring shaped resonant cavity of silica-based high speed electrooptical modulation |
| CN101871950A (en) * | 2010-06-21 | 2010-10-27 | 中北大学 | Optical cavity micro-accelerometer based on integrated input/output terminal |
| WO2017055029A1 (en) * | 2015-09-29 | 2017-04-06 | Tronic's Microsystems | Device for attaching two elements such as a chip, an interposer and a support |
| CN105445494A (en) * | 2015-12-10 | 2016-03-30 | 中北大学 | MOEMS accelerometer based on planar ring cavity, and manufacturing method of the same |
| CN106443065A (en) * | 2016-07-01 | 2017-02-22 | 中国科学院上海微***与信息技术研究所 | High-precision wavelength shape acceleration sensor and preparation method thereof |
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