CN108277477B - Liquid vaporizer and semiconductor processing system using the same - Google Patents

Liquid vaporizer and semiconductor processing system using the same Download PDF

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CN108277477B
CN108277477B CN201810071252.1A CN201810071252A CN108277477B CN 108277477 B CN108277477 B CN 108277477B CN 201810071252 A CN201810071252 A CN 201810071252A CN 108277477 B CN108277477 B CN 108277477B
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cavity
stopper
main body
vaporization device
liquid
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CN108277477A (en
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周仁
张宝戈
侯彬
吕欣
张建
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Piotech Inc
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Piotech Inc
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4483Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to a high-efficiency liquid vaporizer for semiconductor film formation, which vaporizes a specific liquid raw material for film formation and finally outputs the vaporized gas to a reaction cavity for semiconductor film formation through a gas path by carrier gas to prepare a film. The liquid vaporization device comprises a main body and a stopper. The body defines a chamber having an input end for receiving one or more feedstock and an output end for exhausting gas. The stopper is disposed in the cavity of the main body, and thereby divides the cavity into a first cavity and a second cavity, wherein the first cavity includes the input end and the second cavity includes the output end. The stopper has one or more hole-shaped passages, whereby the first cavity and the second cavity are communicated with each other through the hole-shaped passages.

Description

Liquid vaporizer and semiconductor processing system using the same
Technical Field
The present invention relates to the field of semiconductor wafer processing, and more particularly to a liquid vaporization apparatus for vaporizing and supplying liquid feedstock to a semiconductor processing system as a reactant gas.
Background
Currently, in the field of semiconductor thin film deposition applications and manufacturing, the reactant gas and/or the film forming gas are mainly supplied from a liquid raw material through a vaporization device. The improvement of vaporization efficiency of the liquid contributes to the improvement of the utilization rate of the raw material, and sufficient vaporization of the liquid raw material contributes to the formation of a satisfactory semiconductor thin film. Therefore, it is an important object to design and manufacture a vaporizing device to improve the vaporization efficiency. The improvement in vaporization efficiency is mainly related to several factors, including the extension of the vaporization time of the liquid feedstock and the uniformity and constancy of the temperature distribution in the vaporization chamber.
Chinese patent publication No. CN103380486B discloses a vaporization apparatus in which a heater is disposed in a carrier gas passage of a vaporization body, and the heater has a conical or pyramidal structure, and a thin film formed according to the method described has relatively less ripples, particles and carbon content. Chinese patent publication No. CN105220129A discloses a vaporization apparatus, which is structurally designed to use one or more passages having a large ratio of wall area to cross-sectional flow area, and is equipped with one or more heating devices, thereby improving vaporization efficiency. Chinese patent publication No. CN101529564B discloses a vaporization apparatus which discharges a liquid raw material with a plurality of nozzles, each of which is surrounded by a carrier gas discharge port, and periodically changes the volume of a chamber through which the liquid raw material flows with a pressurizing unit, thereby making the discharged droplets small and uniform in size.
The above-disclosed prior arts improve the temperature distribution by improving the heater arrangement or improve the vaporization efficiency by prolonging the vaporization time by improving the cavity of the vaporization apparatus. However, these techniques are lacking in the goal of simultaneously extending vaporization time and maintaining chamber temperature uniformity. Therefore, in order to produce a semiconductor thin film with better quality or to improve the related processes, it is necessary to develop a high-efficiency semiconductor film formation vaporization apparatus that takes both of the above two factors into consideration.
The reference in this specification to any prior publication (or derivative thereof) or to any matter which is known, is not, and should not be taken as, an acknowledgment or admission or any form of suggestion that prior application (or derivative thereof) or known matter forms part of the common general knowledge in the field of endeavour to which this specification relates.
Disclosure of Invention
The present invention is directed to a liquid vaporization device configured to receive a carrier gas from a carrier gas supply and a liquid feedstock from a liquid feedstock supply, the liquid vaporization device comprising a body and a stopper. The body has an inner wall defining a cavity having an input end for receiving one or more feedstock and an output end for exhausting gas. The stopper is disposed in the cavity of the main body, and thereby divides the cavity into a first cavity and a second cavity, wherein the first cavity includes the input end and the second cavity includes the output end, the stopper has one or more porous channels, whereby the first cavity and the second cavity are communicated with each other through the porous channels.
In one embodiment, the body further has a first channel for receiving a carrier gas and a second channel for receiving a liquid feedstock, the first and second channels communicating to the input end of the chamber.
In one embodiment, the second channel comprises a segment extending obliquely upward from the input end of the cavity.
In one embodiment, the body includes a first portion (upper body) and a second portion (lower body) that are joined together via a connecting means.
In one embodiment, the stopper has an upper surface and a lower surface, and the aperture passage of the stopper extends between the upper surface and the lower surface.
In one embodiment, the stopper has an upper surface and a lower surface, wherein the upper surface of the stopper and an inner wall of the first portion of the body form the first cavity, and the lower surface of the stopper and an inner wall of the second portion of the body form the second cavity.
In one embodiment, the first cavity extends in a diverging manner from the input end to the upper surface of the blocker.
In one embodiment, the second cavity extends in a converging manner from the lower surface of the blocker to the output end.
In one embodiment, the stopper has an upper surface, a lower surface and a side portion extending between the upper and lower surfaces, the upper surface of the stopper has a vertex, and the vertex is convex relative to the side portion.
In one embodiment, the liquid vaporization device further comprises a flow control means connected to the second passage of the main body for controlling the flow of the liquid material in the second passage.
In one embodiment, the liquid vaporization device further comprises a fixing means for fixing the stopper in the cavity of the main body. The fixing means comprises a protruding part extending from the side part of the stopper and a recessed part extending inwards from the inner wall of the main body, and the stopper is positioned in the cavity through matching of the protruding part and the recessed part.
In one embodiment, the liquid vaporization device further comprises a heating means disposed at a periphery of the main body for guiding heat to the main body.
In one embodiment, the liquid vaporization device of the present invention further comprises an insulating sleeve for insulating the vaporization device from the surrounding environment.
It is yet another object of the present invention to provide a semiconductor processing system including a reaction chamber and a liquid vaporization apparatus. The reaction chamber has a spraying device for providing reaction gas. The liquid vaporization device comprises a main body and a stopper. The main body has an inner wall defining a cavity having an input end for receiving one or more raw materials and an output end for exhausting gas, the output end being communicatively coupled to the spray device of the reaction chamber. The stopper is disposed in the cavity of the main body, and thereby divides the cavity into a first cavity and a second cavity, wherein the first cavity includes the input end and the second cavity includes the output end, the stopper has one or more porous channels, whereby the first cavity and the second cavity are communicated with each other through the porous channels.
The liquid vaporization device of the invention starts from two aspects of improving vaporization time and ensuring uniform and constant temperature distribution in the vaporization cavity. Through such structural design, improve vaporizing unit's heat-retaining ability, increase the heat storage volume, and then promote vaporizing unit to the undulant sensitivity of temperature, guaranteed the constancy of temperature. Meanwhile, a stopper is arranged in the vaporization cavity, so that the heating area of the vaporization device is increased, and the uniform temperature distribution in the cavity of the vaporization device is ensured. Further, the hole-shaped passages formed in the stoppers allow the mixed gas (containing the insufficiently vaporized liquid raw material, carrier gas, and raw material gas) to be discharged in order, relatively increasing the vaporization time. The liquid vaporization device of the present invention may further comprise the following features: 1. the structure is exquisite and the manufacturing cost is relatively low; 2. vertical configuration facilitating gas discharge; 3. the input of the liquid raw material adopts an inclined path; 4. the vaporizing device can be disassembled for maintenance.
It is to be understood that the broad forms of the invention and their respective features may be used in combination, interchangeably and/or independently and are not intended to be limited to the reference to a single broad form.
Drawings
The invention is described in further detail below with reference to the following figures and embodiments:
FIG. 1 is a block diagram of a semiconductor processing system using a liquid vaporizing apparatus according to the present invention;
FIG. 2 is a schematic structural view of a liquid vaporizer according to the present invention;
FIG. 3 is a cross-sectional view of FIG. 2;
FIG. 4 is a schematic view of a damper of the liquid vaporizing device of the present invention;
FIG. 5 is a schematic view of the upper surface of the stopper of FIG. 4;
in the figure: 100 a semiconductor processing system; 110 a reaction chamber; 111 a support structure; 112 a spray device; 120 a vaporization device; 121 a carrier gas supply source; 122 a supply of liquid feedstock; 123 a controller; 130 an exhaust system; 200 a vaporization device; 210 an insulating sleeve; 211 the top of the insulating sleeve; 212 sidewalls of the insulating sleeve; 213 insulating sheathed floor; 220 a first conduit; 221 flow control means; 222 a second conduit; 223 a third line; 230a main body; 230a upper body; 230b a lower body; 231 an upper surface of the upper body; 232 lower surface of the lower body; 233 an outer surface of the body; 234 a first channel; 235 a second channel; 236 a third channel; 237 an inner wall of the body; 237a first inner wall; 237b a second inner wall; 238a input terminal; 238b output terminals; 239a first cavity; 239b a second cavity; 240 screws; 241O-shaped rings; 242 heating means; a 250 blocker; 251 a porous channel; 252 an upper surface; 253 lower surface; 254 side portion; a 255 projection; 256 vertices.
Detailed Description
Throughout this specification and the claims which follow, unless the context requires otherwise, the word "comprise", and variations such as "comprises" or "comprising", will be understood to imply the inclusion of a stated integer group or step but not the exclusion of any other integer or group of integers.
Figure 1 illustrates one embodiment 100 of a semiconductor processing system of the present invention. The system 100 includes a reaction chamber 110, a vaporizer 120, and an exhaust system 130. Generally, the typical reaction chamber 110 mainly has a support structure 111 for supporting a wafer, a shower device 112 for supplying a reaction gas, and at least one exhaust passage (not shown) for exhausting a process exhaust gas. The reaction chamber 110 is substantially cylindrical, and the support structure 111 has a base for horizontally supporting the wafer and a support member for supporting the base. The susceptor may be embedded in a heater for heating the susceptor and wafer, which is typically powered by a power source connected to the heater, thereby adjusting the temperature of the susceptor. The shower device 112 is disposed at the top of the reaction chamber 110 and configured to receive the gas from the vaporizing device 120 and supply the gas into the reaction chamber 110. The exhaust system 130 has a plurality of pipes, control valves and pumps that cooperate to control the gas pressure in the reaction chamber 110.
The vaporizer 120 is communicatively coupled to a carrier gas supply 121 and a liquid source supply 122 via separate lines, such that the carrier gas and liquid source may be delivered to the vaporizer 120 simultaneously or asynchronously. The piping may have dedicated valves for controlling the flow of gas or liquid, in particular these valves may be controlled by signals from a controller 123. The controller 123 may also be configured to control other valves in the line from the vaporizer 120 to the reaction chamber 110.
In the conventional vaporization apparatus, the liquid raw material is not completely vaporized, but enters the spray apparatus of the reaction chamber along with the pipeline in the form of particles, so that the spray apparatus sprays impure reaction gas, resulting in unsatisfactory quality of the deposited film. The present invention provides a liquid vaporization device, which is aimed at preventing incomplete vaporization of liquid material, and mainly aims at prolonging vaporization time and temperature distribution uniformity to make the liquid material be fully vaporized before being output from the vaporization device.
Fig. 2 to 3 show an embodiment 200 of the liquid vaporization apparatus of the present invention, in which fig. 2 shows an external appearance of the apparatus, and fig. 3 is a longitudinal sectional view of fig. 2 showing an internal configuration of the vaporization apparatus 200. According to this embodiment, the vaporizing device is vertically arranged, i.e. the carrier gas and the liquid feedstock flow substantially from top to bottom in the vaporizing device.
Referring to fig. 2, the vaporizing device 200 has an insulating sleeve 210 for thermal insulation, which is in the form of a cylinder. In this embodiment, the insulating sleeve 210 is assembled from a plurality of components. As shown in fig. 3, the insulating sleeve 210 has a top 211, one or more sidewalls 212, and a floor 213, which may be assembled by known means to form the insulating sleeve. In other embodiments, the insulating sleeve may take on other shapes. A first conduit 220 and a flow control means 221 are provided near the top 211 of the insulating sleeve 210. A second conduit 222 is provided adjacent the sidewall 212 of the insulating sleeve 210. A third conduit 223 is provided adjacent the floor 213 of the insulating sleeve 210.
The first conduit 220 extends from within the insulating sleeve 210 through the top 211 to serve as a conduit for receiving a carrier gas from a carrier gas source. A second conduit 222 extends from within the insulating sleeve 210 through the sidewall 212 and serves as a conduit for receiving liquid feedstock from a source of liquid feedstock. The third conduit 223 extends from the interior of the insulating sleeve 210 across the floor 213 and serves as an outlet conduit for the vaporizer body. The tubing may include a connection means for connecting to external tubing, such as a VCR connector. Flow control means 221 is configured to control the flow of liquid feedstock from second line 222 into the vaporization apparatus. The flow control means 221 may be any known means, such as a valve assembly, that cooperates with the second conduit 222.
Referring to fig. 3, the vaporizing device of this embodiment further includes a main body 230, which is enclosed in the insulating sheath 210. The main body 230 has an upper surface 231 opposite the top 211, a lower surface 232 opposite the floor 213, and an outer surface 233 opposite the side wall 212. The first conduit 220 extends upwardly from the upper surface 231 of the main body 230, the second conduit 222 extends laterally from the outer surface 233 of the main body 230, and the third conduit 223 extends downwardly from the lower surface 232 of the main body 230. The conduits may be integrally formed with the body 230. Arranged appropriately, there is a gap between the main body 230 and an inner surface of the sidewall 212 of the insulating sleeve 210 that has sufficient space to provide a heating means 242. The heating means may be disposed at a periphery of the body 230 for injecting heat into the body 230. In one embodiment, the heating means is resistance wire heating, for example, a heating coil is disposed on the outer peripheral surface of the main body 230.
In this embodiment, the body 230 includes a first portion 230a and a second portion 230b, i.e., an upper body and a lower body. The first portion 230a and the second portion 230b of the main body 230 are coupled together via a connection means, such as a plurality of screws 240. For example, the contact surfaces of the upper and lower bodies may be provided with corresponding screw holes for insertion of screws therethrough. The upper body 230a has a concave structure at a side opposite to the upper surface 231, and the lower body 230b has a convex structure at a side opposite to the lower surface 232, and the concave structure and the convex structure are matched with each other to form a contact interface of the upper and lower bodies. An airtight means may be provided to seal the contact interface, such as providing one or more O-rings 241 between the contact surfaces of the upper and lower bodies 230a, 230 b.
The upper body 230a is provided with a first passage 234 for receiving a carrier gas and a second passage 235 for receiving a liquid raw material. The first channel 234 extends downwardly in a converging manner along the first conduit 220. The second passage 235 is connected to the first passage 234 in communication therewith and extends obliquely upward from the first passage 234. The second passage 235 is communicatively coupled to the second conduit 222 via the flow control means 221, such as a needle valve. In one embodiment, the second pipe 222 is a horizontal pipe, and the second channel 235 is inclined at fifteen degrees with respect to the second pipe 222. This design is to avoid reverse flow of the liquid feed through the second channel 235. At the end of the first channel 234, near the second channel 235, there is a converging section where the carrier gas meets the liquid feed. In addition, the lower body 230b is provided with a third passage 236 extending along the third pipe 223.
The main body 230 has an inner wall 237. The inner wall 237 is divided into a first inner wall 237a and a second inner wall 237b according to the separable upper body 230a and lower body 230 b. In combination, the inner wall 237 of the body 230 defines a chamber (not numbered) having an input end 238a for receiving one or more materials and an output end 238b for exhausting gas. An input end 238a of the chamber is located in the upper body and communicates with the first passage 234 to receive a mixed feed comprising a carrier gas and a liquid feed. The output end 238b of the chamber is located in the lower body and communicates with the third passage 236 to discharge the fully vaporized mixed gas. The multi-stage vaporization process begins after the mixed carrier gas and liquid feedstock enters the chamber at input end 238a, wherein the stages are caused by the structure.
Referring to fig. 3 to 5, the liquid vaporizer 200 of the present invention further includes a stopper 250 disposed in the cavity of the main body 230, and thereby dividing the cavity into a first cavity 239a and a second cavity 239 b. The first cavity 239a includes the input end 238a, and the second cavity 239b includes the output end 238 b. The stopper 250 has one or more hole-shaped passages 251 as shown in fig. 4 and 5, whereby the first cavity 239a and the second cavity 239b can communicate with each other only through the hole-shaped passages 251. According to this arrangement, the mixed carrier gas and liquid raw material sequentially pass through the first cavity 239a, the stopper 250, the second cavity 239b and the third channel 236. Specifically, the carrier gas and the gasified gas of the liquid source pass through the third channel. The upper body 230a, the lower body 230b and the stopper 250 may be made of the same material, such as aluminum alloy.
Fig. 4 shows a longitudinal section of the damper 250 of this embodiment. The stopper 250 is a disk having an upper surface 252, a lower surface 253, and a side 254. The bore channel 251 extends between an upper surface 252 and a lower surface 253. Thus, and referring to FIG. 3, the first cavity 239a is defined by the first inner wall 237a of the upper body 230a and the upper surface 252 of the stopper 250, and the second cavity 239b is defined by the second inner wall 237b of the lower body 230b and the lower surface 253 of the stopper 250. The inner wall 237 of this embodiment is also particularly configured such that the first cavity 239a extends in a diverging manner from the input end 238a to the upper surface of the blocker 250, and the second cavity 239b extends in a converging manner from the lower surface of the blocker 250 to the output end 238 b.
The liquid vaporizing device of this embodiment further comprises a fixing means for fixing the stopper 250 in the cavity of the main body 230. Referring also to fig. 3 and 4, the side portion 254 of the stopper 250 has a protrusion 255 extending on the same side as the upper surface 252, and an inner wall of the upper body 230a of the main body 230 has a recess (not shown) extending inward and arranged to correspond to the protrusion 255. The stopper 250 is stably received in the cavity by the mating of the protrusion and the recess. In other embodiments of the present invention, modifications regarding the protrusions and the recesses are possible to those skilled in the art.
The stopper 250 has a protrusion on each of its upper and lower surfaces, and the protrusion has a vertex 256, and the vertex 256 may protrude with respect to the side 254 or the protrusion 256. In one embodiment, as shown in the cross-section of FIG. 4, the two inclined surfaces of the upper surface 252 and/or the lower surface 253 centered about the vertex 256 have an included angle of approximately one hundred and fifty degrees. Such a design can increase the contact area between the mixed gas and the stopper 250, whether in the first cavity 239a or the second cavity 239b, thereby increasing the vaporization efficiency.
Fig. 5 is a top view of fig. 4, which shows a plurality of the cellular channels 251 surrounding the apex 256 in a symmetrical manner, and each of the cellular channels is cylindrically extended. In other embodiments, the bore-like passage may extend rectangularly. Projection 256 is a raised ring on the upper surface, but in other embodiments projection 255 may comprise a plurality of separate pieces.
Based on the liquid vaporizer of the present invention, the carrier gas first purges the liquid raw material entering the confluence section of the first channel 234 to the first cavity 239a and performs a first vaporization therein. Then, the mixed gas (containing the liquid raw material which is not completely vaporized) reaches the upper surface 252 of the stopper 250 and then flows into the orifice passage 251 to be vaporized for the second time. Finally, the mixed gas enters the second cavity 239b for the third vaporization. In the process, the stopper of the present invention increases the length of the gas flow path, i.e., relatively extends the vaporization time, ensuring that the liquid feedstock is sufficiently vaporized. In some possibilities, by suitable configuration, the implementation of one or more blockers is also feasible. The structure of the liquid vaporization device also improves the heat storage capacity, and the heat can be limited around the cavity, so that the temperature is distributed uniformly, and the vaporization efficiency is facilitated. The fully vaporized mixed gas becomes a reaction gas, which is transported through the third channel 236 to the reaction chamber as described in fig. 1 for use as a thin film process.
In addition, the liquid vaporization device of the invention also has the advantage of assembly. First, the upper body 230a may be inverted and the O-ring together with the stopper 250 may be placed at a proper position of the upper body 230a according to the fixing means. The lower body 230b is correspondingly coupled to the upper body 230a by means of the screws. After the assembly of the main body is completed, the main body is rotated and aligned such that the upper main body 230a faces upward. The flow control means is inserted into a predetermined mounting hole of the upper body 230 a. Then, the heating means and the insulating sleeve are sequentially installed. Finally, a connector, such as a VCR fitting, is mounted to the pipes, respectively. Thus, the liquid vaporization device of the present invention is substantially assembled. Regarding disassembly, the operations can be reversed according to the above-described sequence.
Many variations and modifications will become apparent to those skilled in the art. It will be appreciated by persons skilled in the art that all such variations and modifications as fall within the broad spirit and scope of the invention as described above.

Claims (14)

1. A liquid vaporization device configured to receive a carrier gas from a carrier gas supply and a liquid feedstock from a liquid feedstock supply, the liquid vaporization device comprising:
a body having an inner wall defining a chamber having an input end for receiving one or more feedstock and an output end for exhausting gas; and
a stopper disposed in the cavity of the main body, and dividing the cavity into a first cavity and a second cavity, wherein the first cavity includes the input end and the second cavity includes the output end, the stopper having one or more hole-shaped passages, whereby the first cavity and the second cavity are communicated with each other through the hole-shaped passages, the stopper having an upper surface, a lower surface, and a side portion extending between the upper surface and the lower surface, the upper surface of the stopper having a vertex, and the vertex protruding relative to the side portion.
2. The fluid vaporization device of claim 1, wherein: the main body also has a first channel for receiving a carrier gas and a second channel for receiving a liquid feedstock, the first channel and the second channel communicating to the input end of the chamber.
3. The fluid vaporization device of claim 2, wherein: the second channel includes a section extending obliquely upward from the input end of the cavity.
4. The fluid vaporization device of claim 1, wherein: the main body comprises a first part and a second part, and the first part and the second part of the main body are combined together through a connecting means.
5. The fluid vaporization device of claim 1, wherein: the stopper has an upper surface and a lower surface, and the aperture-shaped passage of the stopper extends between the upper surface and the lower surface.
6. The fluid vaporization device of claim 4, wherein: the stopper has an upper surface and a lower surface, wherein the upper surface of the stopper and an inner wall of the first portion of the main body form the first cavity, and the lower surface of the stopper and an inner wall of the second portion of the main body form the second cavity.
7. The fluid vaporization device of claim 6, wherein: the first cavity extends in a divergent manner from the input end to the upper surface of the stopper.
8. The fluid vaporization device of claim 6, wherein: the self-cavity extends in a convergent manner from the lower surface of the stopper to the output end.
9. The fluid vaporization device of claim 1, wherein: further comprises a flow control means connected to the second passage of the main body for controlling the flow of the liquid material in the second passage.
10. The fluid vaporization device of claim 1, wherein: further comprising a fixing means for fixing the stopper in the cavity of the main body.
11. The fluid vaporization device of claim 10, wherein: the fixing means comprises a protruding part extending from the side part of the stopper and a recessed part extending inwards from the inner wall of the main body, and the stopper is positioned in the cavity through the matching of the protruding part and the recessed part.
12. The fluid vaporization device of claim 1, wherein: further comprises a heating means disposed at a periphery of the main body for guiding heat to the main body.
13. The fluid vaporization device of claim 1, wherein: further comprising an insulating jacket for insulating the vaporization apparatus from the surrounding environment.
14. A semiconductor processing system, comprising:
a reaction chamber having a spray device for providing reaction gas; and
a liquid vaporization device, comprising:
a body having an inner wall defining a chamber having an input end for receiving one or more raw materials and an output end for exhausting gas, the output end being communicatively coupled to the spray device of the reaction chamber; and
a stopper disposed in the cavity of the main body, and dividing the cavity into a first cavity and a second cavity, wherein the first cavity includes the input end and the second cavity includes the output end, the stopper having one or more hole-shaped passages, whereby the first cavity and the second cavity are communicated with each other through the hole-shaped passages, the stopper having an upper surface, a lower surface, and a side portion extending between the upper surface and the lower surface, the upper surface of the stopper having a vertex, and the vertex protruding relative to the side portion.
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CN101983418A (en) * 2008-04-01 2011-03-02 株式会社富士金 Gas supply device equipped with carburetor

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