CN108269942B - A kind of OLED structure and preparation method thereof - Google Patents
A kind of OLED structure and preparation method thereof Download PDFInfo
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- CN108269942B CN108269942B CN201611256318.1A CN201611256318A CN108269942B CN 108269942 B CN108269942 B CN 108269942B CN 201611256318 A CN201611256318 A CN 201611256318A CN 108269942 B CN108269942 B CN 108269942B
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- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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Abstract
The present invention provides a kind of OLED structure and preparation method thereof, and the OLED structure includes: substrate；The anode electrode layer being formed on the substrate, the anode electrode layer include p-type carbon nano pipe array；The organic electroluminescence cell being formed on the anode electrode layer；The negative electrode layer being formed on the organic electroluminescence cell, the negative electrode layer include n type carbon nanotube array；The passivation layer being formed on the negative electrode layer.Relative to the OLED structure of conventionally employed ito anode and metallic cathode, OLED structure of the invention can operate at a lower voltage, and the density with higher OLED cell, can effectively improve the luminous efficiency of OLED structure.And in the production method of OLED structure of the invention, p-type carbon nano pipe array, n type carbon nanotube array are compatible with the manufacture craft of organic electroluminescence cell, advantageously reduce manufacturing cost.
Description
Technical field
The invention belongs to technical field of integrated circuits, it is related to a kind of OLED structure and preparation method thereof.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) teaches Deng Qingyun by Chinese descendant in America
(Ching W.Tang) has found in the lab in nineteen eighty-three, thus expands the research to OLED.OLED display technology has
Self-luminous, wide viewing angle, almost infinite high contrast, compared with low power consumption, high reaction speed the advantages that.
Typical OLED includes two electrodes and the organic electroluminescence cell that is formed between the two electrodes
(Organic Elecroluminescent, EL) unit.Organic EL units generally include organic cavity transmission layer (Organic
Hole-Transporting Layer, HTL), organic luminous layer (Organic Light-Emitting Layer, LEL) and have
Machine electron transfer layer (Organic Electron-Transporting Layer, ETL).One of electrode is anode, is responsible for
Positive charge (hole) is injected into the hole transmission layer (HTL) in EL unit, another electrode is the marking, is responsible for negative electrical charge (electricity
Son) injection EL unit in electron transfer layer (ETL).Make its forward bias when adding certain potential between two electrodes of OLED
It sets, is sent out from anode injected holes and can be again compound from cathode injected electrons, and from organic luminous layer (LEL)
Light, and the light issued can be seen by transparent electrode.
In the manufacture craft of OLED, anode be usually make on substrate, and the manufacturing process of anode and OLED its
The manufacturing process of remaining part point is separated.For example, a kind of common transparent electrode, such as indium tin oxide (Indium-Tin-
Oxide, ITO) or indium-zinc oxide (Indium Zinc-Oxide, IZO), transparent substrates are formed in by ion sputtering
Or on the backboard of thin film transistor (TFT) (Thin Film Transistor, TFT).However, prepared or pure ITO is due to it
Relatively low work function cannot function as a kind of effective anode.Low work-function anode will form a high barrier, so that hole
It is difficult to be injected into adjacent organic EL units from anode, so as to cause high driving voltage and low service life.
In order to improve the electroluminescent properties of OLED, anode is modified in the prior art.For example, relative to production
OLED on untreated anode is made in and is promoted by the electroluminescent properties of the OLED on oxygen treatments applied anode.So
And in practical applications, this improvement is effective not enough.In order to further increase electroluminescent properties, organic electroluminescence is being formed
Before luminescence unit, anode buffer layer is being formed by oxygen treatments applied or the anode layer surface without oxygen treatments applied first.For example,
United States Patent (USP) US6351067 is disclosed using thin oxide layer as anode buffer layer, and United States Patent (USP) US6208075 discloses use
Plasma-deposited fluorocarbon polymer (abbreviation CFx) is used as anode buffer layer.This layer of anode buffer layer is contacted with anode top surface,
The luminous efficiency and service life of OLED can be improved.
Since anode buffer layer is a kind of typical high resistance medium layer, if there are anode buffer layer, OLED for anode surface
Driving voltage will thickness to anode buffer layer it is very sensitive.Thick anode buffer layer will lead to very high driving voltage.
In fact, in the production process, being very difficult to arrive in about 5 nanometer ranges the thickness control of anode buffer layer at 0.5 nanometer
's.Further, since (such as higher than 800 DEG C) that anode buffer layer is usually formed at very high temperatures, the anode buffer
The preparation method of layer generally can not be compatible with organic EL units, causes higher manufacturing cost.
Obviously, above-mentioned anode modification process, including oxygen processing or deposition anode buffer layer are infeasible or facilitate system
It makes.
Therefore, a kind of new OLED structure and preparation method thereof how is provided, to effectively improve the Electroluminescence of OLED
Can, and manufacturing cost is reduced, become those skilled in the art's important technological problems urgently to be resolved.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of OLED structure and its production sides
Method, for solution, OLED luminous efficiency is lower in the prior art, the higher problem of cost of manufacture.
In order to achieve the above objects and other related objects, the present invention provides a kind of OLED structure, comprising:
Substrate；
The anode electrode layer being formed on the substrate, the anode electrode layer include p-type carbon nano pipe array；
The organic electroluminescence cell being formed on the anode electrode layer；
The negative electrode layer being formed on the organic electroluminescence cell, the negative electrode layer include N-type carbon nanometer
Pipe array；
The passivation layer being formed on the negative electrode layer.
Optionally, the organic electroluminescence cell successively includes organic cavity transmission layer, organic luminous layer from bottom to top
And organic electron transport layer, wherein the organic cavity transmission layer is contacted with the p-type carbon nano pipe array, the Organic Electricity
Sub- transport layer and the n type carbon nanotube array contact.
Optionally, an insulating layer is formed between the substrate and the anode electrode layer.
Optionally, the material of the insulating layer includes silica.
Optionally, the p-type carbon nano pipe array includes several p-type carbon nanotube units arranged in parallel；The N-type carbon
Nano-tube array includes several n type carbon nanotube units arranged in parallel；And the p-type carbon nanotube unit and the N-type carbon
Nanometer pipe unit orientation be in predetermined angle α, 0 ° < α < 180 °.
Optionally, the p-type carbon nanotube unit is single p-type carbon nanotube, or is p-type carbon nano-tube bundle；The N-type
Carbon nanotube unit is single n type carbon nanotube, or is n type carbon nanotube beam.
The present invention also provides a kind of production methods of OLED structure, include the following steps:
S1: a substrate is provided, forms an insulating layer on the substrate；
S2: it is formed on the insulating layer p-type carbon nano pipe array；
S3: organic electroluminescence cell is formed on the p-type carbon nano pipe array；
S4: n type carbon nanotube array is formed on the organic electroluminescence cell；
S5: passivation layer is formed on the n type carbon nanotube array.
Optionally, in Yu Suoshu step S2, it is formed on the insulating layer patterned carbon nano-tube catalyst figure first
Case is then based on the carbon nano-tube catalyst pattern and is formed on the insulating layer p-type carbon nano pipe array.
Optionally, in Yu Suoshu step S4, patterned carbon nanometer is formed on the organic electroluminescence cell first
Pipe catalyst pattern is then based on the carbon nano-tube catalyst pattern and forms N-type carbon on the organic electroluminescence cell
Nano-tube array.
Optionally, the organic electroluminescence cell successively includes organic cavity transmission layer, organic luminous layer from bottom to top
And organic electron transport layer.
Optionally, the p-type carbon nano pipe array includes several p-type carbon nanotube units arranged in parallel；The N-type carbon
Nano-tube array includes several n type carbon nanotube units arranged in parallel；And the p-type carbon nanotube unit and the N-type carbon
Nanometer pipe unit orientation be in predetermined angle α, 0 ° < α < 180 °.
Optionally, the p-type carbon nanotube unit is single p-type carbon nanotube, or is p-type carbon nano-tube bundle；The N-type
Carbon nanotube unit is single n type carbon nanotube, or is n type carbon nanotube beam.
As described above, OLED structure and preparation method thereof of the invention, has the advantages that
(1) OLED structure of the invention is made using p-type carbon nano pipe array as anode using n type carbon nanotube array
For cathode, organic electroluminescence cell is formed between p-type carbon nano pipe array and n type carbon nanotube array, and described organic
Organic cavity transmission layer in electroluminescence cell is contacted with the p-type carbon nano pipe array, organic electron transport layer and the N
The contact of type carbon nano pipe array.Due to having lower contact resistance, and P between p-type carbon nanotube and organic cavity transmission layer
Type carbon nanotube is more conducive to the injection in hole, and OLED is operated at low voltage, effectively improves the electroluminescent of OLED
Luminescent properties.
(2) several p-type carbon nanotube units arranged in parallel can be used in the p-type carbon nano pipe array, and the N-type carbon is received
Several n type carbon nanotube units arranged in parallel, and the p-type carbon nanotube unit and the N-type carbon can be used in mitron array
The orientation of nanometer pipe unit interlocks, and each crosspoint is used as an OLED cell, since carbon nanotube has very little
Size, relative to traditional OLED structure, in the present invention, the density of OLED cell is greatly improved, to improve OLED knot
The luminous power of structure.
(3) in the production method of OLED structure of the invention, p-type carbon nano pipe array, n type carbon nanotube array with it is organic
The manufacture craft of electroluminescence cell is compatible, advantageously reduces manufacturing cost.
Detailed description of the invention
Fig. 1 is shown as the schematic diagram of the section structure of OLED structure of the invention.
Fig. 2 is shown as the stereochemical structure decomposing schematic representation of OLED structure of the invention.
Fig. 3 is shown as providing a substrate in the production method of OLED structure of the invention, forms one on the substrate absolutely
The schematic diagram of edge layer.
Fig. 4 is shown as being formed on the insulating layer p-type carbon nano-pipe array in the production method of OLED structure of the invention
The schematic diagram of column.
Fig. 5 is shown as in the production method of OLED structure of the invention being formed on the p-type carbon nano pipe array organic
The schematic diagram of electroluminescence cell.
Fig. 6 is shown as forming N-type on the organic electroluminescence cell in the production method of OLED structure of the invention
The schematic diagram of carbon nano pipe array.
Fig. 7 is shown as in the production method of OLED structure of the invention forming passivation on the n type carbon nanotube array
The schematic diagram of layer.
Component label instructions
1 substrate
2 insulating layers
3 anode electrode layers
300 p-type carbon nanotube units
4 organic electroluminescence cells
5 negative electrode layers
500 n type carbon nanotube units
6 passivation layers
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Fig. 7.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
The present invention provides a kind of OLED structure, please refers to Fig. 1 and Fig. 2, is respectively indicated as the section knot of the OLED structure
Structure schematic diagram and stereochemical structure decomposing schematic representation, comprising:
Substrate 1；
The anode electrode layer 3 being formed on the substrate 1, the anode electrode layer 3 include p-type carbon nano pipe array；
The organic electroluminescence cell 4 being formed on the anode electrode layer 3；
The negative electrode layer 5 being formed on the organic electroluminescence cell 4, the negative electrode layer 5 include that N-type carbon is received
Mitron array；
The passivation layer 6 being formed on the negative electrode layer 5.
Specifically, the substrate 1 uses transparent material, including but not limited to glass substrate, quartz base plate or organic resin
Substrate etc..In the present embodiment, 1 surface of substrate is also formed with an insulating layer 2, and the anode electrode layer 3 is formed in described exhausted
On edge layer 2.As an example, the material of the insulating layer 2 includes but is not limited to silica.
Specifically, the anode electrode layer 3 includes p-type carbon nano pipe array, the negative electrode layer 5 includes that N-type carbon is received
Mitron array, the organic electroluminescence cell 4 are formed between the p-type carbon nano pipe array and n type carbon nanotube array,
It and from bottom to top successively include organic cavity transmission layer, organic luminous layer and organic electron transport layer, wherein the organic hole
Transport layer is contacted with the p-type carbon nano pipe array, the organic electron transport layer and the n type carbon nanotube array contact.
Specifically, the organic cavity transmission layer, organic luminous layer and organic electron transport layer use different organic materials
Material is formed, and the organic cavity transmission layer and the organic electron transport layer respectively will be from the p-type carbon nano pipe arrays
Inject hole and the injection electron transmission from the n type carbon nanotube array to the organic luminous layer and compound, excitation institute
The luminescent material stated in organic luminous layer shines.
P-type carbon nano pipe array is used in the present invention as anode, due to p-type carbon nanotube and organic cavity transmission layer
Between have lower contact resistance, and p-type carbon nanotube have good Hole injection capacity, be more conducive to hole note
Enter, OLED is operated at low voltage, effectively improves the electroluminescent properties of OLED.
Specifically, the p-type carbon nanotube can be obtained by doping, such as boron doping.
As an example, the p-type carbon nano pipe array includes several p-type carbon nanotube units 300 arranged in parallel；It is described
N type carbon nanotube array includes several n type carbon nanotube units 500 arranged in parallel；And the p-type carbon nanotube unit 300
Orientation with the n type carbon nanotube unit 500 is in predetermined angle α, and 0 ° < α < 180 °.
In other words, the orientation of the p-type carbon nanotube unit 300 and the n type carbon nanotube unit 500 is handed over
Mistake, and each crosspoint can be used as an OLED cell.(radial dimension is nanometer to size due to carbon nanotube with very little
Magnitude, axial dimension are micron dimension), relative to traditional OLED structure, in the present invention, the density of OLED cell is able to significantly
It improves, to improve the luminous power of OLED structure.
In the present embodiment, the orientation of the p-type carbon nanotube unit 300 and the n type carbon nanotube unit 500 is excellent
It is selected as perpendicular relationship, i.e. α=90 °.
Specifically, the p-type carbon nanotube unit 300 can be single p-type carbon nanotube, or p-type carbon nanometer
Tube bank；The n type carbon nanotube unit 500 can be single n type carbon nanotube, or n type carbon nanotube beam.
Specifically, the passivation layer 6 shields, material includes but is not limited to silica, silicon nitride, oxynitride
Deng.
OLED structure of the invention, as anode, is used as yin using n type carbon nanotube array using p-type carbon nano pipe array
Pole, organic electroluminescence cell are formed between p-type carbon nano pipe array and n type carbon nanotube array, and the organic electroluminescence
Organic cavity transmission layer in luminescence unit is contacted with the p-type carbon nano pipe array, organic electron transport layer and the N-type carbon
Nano-tube array contact.Relative to the OLED structure of conventionally employed ito anode and metallic cathode, OLED structure of the invention can be with
It operates at a lower voltage, and the density with higher OLED cell, can effectively improve the luminous efficiency of OLED structure.
Embodiment two
The present invention also provides a kind of production methods of OLED structure, include the following steps:
Referring initially to Fig. 3, step S1 is executed: a substrate 1 being provided, forms an insulating layer 2 on the substrate 1.
Specifically, the substrate 1 uses transparent material, including but not limited to glass substrate, quartz base plate or organic resin
Substrate etc..The material of the insulating layer 2 includes but is not limited to silica, can pass through physical vapour deposition (PVD) or chemical vapour deposition technique
It is formed on the substrate 1.
Referring next to Fig. 4, step S2 is executed: p-type carbon nano pipe array is formed on the insulating layer 2.
As an example, forming patterned carbon nano-tube catalyst pattern on the insulating layer 2 first, it is then based on institute
It states carbon nano-tube catalyst pattern and forms p-type carbon nano pipe array on the insulating layer 2.The carbon nano-tube catalyst includes
But it is not limited to any one or more in Fe, Ni, Cu, Co, Pt, Au, Rh.
As an example, forming the p-type carbon nano pipe array, the chemical vapour deposition technique using chemical vapour deposition technique
The carbon source of use includes but is not limited to methane, acetylene etc., and carrier gas includes but is not limited to one of argon gas, hydrogen, nitrogen or more
Kind, and it is alternative using microwave, plasmaassisted means.In carbon nanotube growth process, dopant can be added, obtain
P-type carbon nanotube.In this implementation, the axis of carbon nanotube is substantially parallel with the 1 place plane of substrate.
As an example, the p-type carbon nano pipe array includes several p-type carbon nanotube units 300 arranged in parallel.It is described
P-type carbon nanotube unit 300 can be single p-type carbon nanotube, or p-type carbon nano-tube bundle.
In the present invention, due to having lower contact resistance, and p-type between p-type carbon nanotube and organic cavity transmission layer
Carbon nanotube is more conducive to the injection in hole, and OLED is operated at low voltage, effectively improves the electroluminescent hair of OLED
Optical property.
Then referring to Fig. 5, executing step S3: forming organic electroluminescence cell on the p-type carbon nano pipe array
4.It should be pointed out that Fig. 5-Fig. 7, which is used, decomposes knot in order to preferably show the positional relationship between different layers carbon nanotube
The technique of painting of composition, in fact, being to be in close contact between adjacent two layers.
Specifically, the organic electroluminescence cell 4 successively includes organic cavity transmission layer, organic luminous layer from bottom to top
And organic electron transport layer, and the organic cavity transmission layer is contacted with the p-type carbon nano pipe array.The organic hole passes
Defeated layer, organic luminous layer and organic electron transport layer are formed using different organic materials.The production of organic electroluminescence cell
Technology is well known to those skilled in the art, and details are not described herein again.
Again referring to Fig. 6, executing step S4: forming n type carbon nanotube array on the organic electroluminescence cell 4.
As an example, patterned carbon nano-tube catalyst pattern is formed on the organic electroluminescence cell 4 first,
It is then based on the carbon nano-tube catalyst pattern and forms n type carbon nanotube array on the organic electroluminescence cell 4.Its
In, n type carbon nanotube has good electron injection ability.
As an example, forming the n type carbon nanotube array, the chemical vapour deposition technique using chemical vapour deposition technique
The carbon source of use includes but is not limited to methane, acetylene etc., and carrier gas includes but is not limited to one of argon gas, hydrogen, nitrogen or more
Kind, and it is alternative using microwave, plasmaassisted means.In this implementation, where the axis of carbon nanotube and the substrate 1
Plane is substantially parallel.
As an example, the n type carbon nanotube array includes several n type carbon nanotube units 500 arranged in parallel.It is described
N type carbon nanotube unit 500 can be single n type carbon nanotube, or n type carbon nanotube beam；And the N-type carbon nanometer
The orientation of pipe unit 500 and the p-type carbon nanotube unit 300 is in predetermined angle α, and 0 ° < α < 180 °.
In other words, the orientation of the p-type carbon nanotube unit 300 and the n type carbon nanotube unit 500 is handed over
Mistake, and each crosspoint can be used as an OLED cell.Since carbon nanotube has the size of very little, relative to traditional
OLED structure, the present invention in, the density of OLED cell is greatly improved, to improve the luminous power of OLED structure.
In the present embodiment, the orientation of the p-type carbon nanotube unit 300 and the n type carbon nanotube unit 500 is excellent
It is selected as perpendicular relationship, i.e. α=90 °.
Finally referring to Fig. 7, executing step S5: forming passivation layer 6 on the n type carbon nanotube array.
Specifically, forming the passivation layer 6, the passivation layer 6 using physical vaporous deposition or chemical vapour deposition technique
It shields, material includes but is not limited to silica, silicon nitride, oxynitride etc..
In the production method of OLED structure of the invention, p-type carbon nano pipe array, n type carbon nanotube array and Organic Electricity
The manufacture craft of electroluminescent unit is compatible, advantageously reduces manufacturing cost.
In conclusion OLED structure of the invention and preparation method thereof is using p-type carbon nano pipe array as anode, use
For n type carbon nanotube array as cathode, organic electroluminescence cell is formed in p-type carbon nano pipe array and n type carbon nanotube battle array
Between column, and the organic cavity transmission layer in the organic electroluminescence cell is contacted with the p-type carbon nano pipe array, organic
Electron transfer layer and the n type carbon nanotube array contact.Due between p-type carbon nanotube and organic cavity transmission layer have compared with
Low contact resistance, and p-type carbon nanotube is more conducive to the injection in hole, and OLED is operated at low voltage, has
Effect improves the electroluminescent properties of OLED.Several p-type carbon nanotube lists arranged in parallel can be used in the p-type carbon nano pipe array
Several n type carbon nanotube units arranged in parallel, and the p-type carbon nanotube list can be used in member, the n type carbon nanotube array
First orientation with the n type carbon nanotube unit interlocks, and each crosspoint is used as an OLED cell, due to carbon nanometer
The size with very little is managed, relative to traditional OLED structure, in the present invention, the density of OLED cell is greatly improved, from
And improve the luminous power of OLED structure.And in the production method of OLED structure of the invention, p-type carbon nano pipe array, N-type
Carbon nano pipe array is compatible with the manufacture craft of organic electroluminescence cell, advantageously reduces manufacturing cost.So the present invention has
Effect overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (8)
1. a kind of OLED structure characterized by comprising
Substrate；
The anode electrode layer being formed on the substrate, the anode electrode layer include p-type carbon nano pipe array；
The organic electroluminescence cell being formed on the anode electrode layer；
The negative electrode layer being formed on the organic electroluminescence cell, the negative electrode layer include n type carbon nanotube battle array
Column；
The passivation layer being formed on the negative electrode layer；
Wherein, the p-type carbon nano pipe array includes several p-type carbon nanotube units arranged in parallel；The n type carbon nanotube
Array includes several n type carbon nanotube units arranged in parallel, and the p-type carbon nanotube unit and the n type carbon nanotube
The orientation of unit is in predetermined angle α, and 0 ° < α < 180 °, the p-type carbon nanotube unit is single p-type carbon nanotube, or is
P-type carbon nano-tube bundle；The n type carbon nanotube unit is single n type carbon nanotube, or is n type carbon nanotube beam.
2. OLED structure according to claim 1, it is characterised in that: the organic electroluminescence cell is from bottom to top successively
Including organic cavity transmission layer, organic luminous layer and organic electron transport layer, wherein the organic cavity transmission layer and the P
The contact of type carbon nano pipe array, the organic electron transport layer and the n type carbon nanotube array contact.
3. OLED structure according to claim 1, it is characterised in that: formed between the substrate and the anode electrode layer
There is an insulating layer.
4. OLED structure according to claim 3, it is characterised in that: the material of the insulating layer includes silica.
5. a kind of production method of OLED structure, which comprises the steps of:
S1: a substrate is provided, forms an insulating layer on the substrate；
S2: it is formed on the insulating layer p-type carbon nano pipe array；
S3: organic electroluminescence cell is formed on the p-type carbon nano pipe array；
S4: n type carbon nanotube array is formed on the organic electroluminescence cell；
S5: passivation layer is formed on the n type carbon nanotube array；
Wherein, the p-type carbon nano pipe array includes several p-type carbon nanotube units arranged in parallel；The n type carbon nanotube
Array includes several n type carbon nanotube units arranged in parallel, and the p-type carbon nanotube unit and the n type carbon nanotube
The orientation of unit is in predetermined angle α, and 0 ° < α < 180 °, the p-type carbon nanotube unit is single p-type carbon nanotube, or is
P-type carbon nano-tube bundle；The n type carbon nanotube unit is single n type carbon nanotube, or is n type carbon nanotube beam.
6. the production method of OLED structure according to claim 5, it is characterised in that: in Yu Suoshu step S2, exist first
Patterned carbon nano-tube catalyst pattern is formed on the insulating layer, is then based on the carbon nano-tube catalyst pattern in institute
State formation p-type carbon nano pipe array on insulating layer.
7. the production method of OLED structure according to claim 5, it is characterised in that: in Yu Suoshu step S4, exist first
Patterned carbon nano-tube catalyst pattern is formed on the organic electroluminescence cell, is then based on the carbon nanometer pipe catalytic
Agent pattern forms n type carbon nanotube array on the organic electroluminescence cell.
8. the production method of OLED structure according to claim 5, it is characterised in that: the organic electroluminescence cell is certainly
It successively include organic cavity transmission layer, organic luminous layer and organic electron transport layer on down.
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| TW106122285A TWI630728B (en) | 2016-12-30 | 2017-07-03 | An oled device and the method for preparing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW200814393A (en) * | 2006-07-18 | 2008-03-16 | Univ Southern California | Organic optoelectronic device electrodes with nanotubes |
| CN101400198A (en) * | 2007-09-28 | 2009-04-01 | 清华大学 | Surface heating light source, preparation thereof and method for heat object application |
| CN105702875A (en) * | 2014-12-11 | 2016-06-22 | 财团法人工业技术研究院 | Light-emitting element, electrode structure and manufacturing method thereof |
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| CN108269942A (en) | 2018-07-10 |
| TWI630728B (en) | 2018-07-21 |
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