CN108269935A - A kind of quantum dot film and preparation method thereof - Google Patents
A kind of quantum dot film and preparation method thereof Download PDFInfo
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- CN108269935A CN108269935A CN201611262007.6A CN201611262007A CN108269935A CN 108269935 A CN108269935 A CN 108269935A CN 201611262007 A CN201611262007 A CN 201611262007A CN 108269935 A CN108269935 A CN 108269935A
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- quantum
- quantum dot
- dot
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- 238000002360 preparation method Methods 0.000 title claims abstract description 61
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- 239000000463 material Substances 0.000 claims description 74
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- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 description 4
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- 235000011187 glycerol Nutrition 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention discloses a kind of quantum dot film and preparation method thereof, by weight percentage, including following component：Quantum dot：0.01‑40.0%；The quantum dot includes at least one quantum-dot structure unit arranged successively in radial directions, and the quantum-dot structure unit is the graded alloy component structure of level width variation or the in the radial direction consistent homogeneous components structure of level width in the radial direction；Disperse the medium of quantum dot：60.0‑99.99%.Manufactured semiconductor devices optically and electrically waits device performances with excellent after quantum dot film film forming of the present invention.
Description
Technical field
The present invention relates to technology of quantum dots fields more particularly to a kind of quantum dot film and preparation method thereof.
Background technology
Quantum dot is a kind of special material for being limited in nanometer scale in three dimensions, this significant
Quantum confined effect causes quantum dot to be provided with many unique nanometer properties：Launch wavelength is continuously adjusted, emission wavelength is narrow, is inhaled
Receive spectral width, luminous intensity height, fluorescence lifetime length and good biocompatibility etc..These features cause quantum dot to be shown in tablet
Show, the fields such as solid-state lighting, photovoltaic solar, biomarker are respectively provided with the prospect of being widely applied.It especially should in FPD
With aspect, the quanta point electroluminescent diode component based on quanta point material（Quantum dot light-emitting
Diodes, QLED）Characteristic and optimization by means of CdS quantum dots, in display image quality, device performance, manufacture cost
Etc. shown huge potentiality.Although the performance of QLED devices in all respects is continuously available promotion in recent years no matter
It is also to have phase with the requirement of commercial application in device efficiency or in the basic devices performance parameter such as device job stability
When gap, this also hinders the development and application of quanta point electroluminescent display technology significantly.In addition, it is not limited only to QLED devices
Part, in other areas, quanta point material are also gradually paid attention to relative to the characteristic of traditional material, such as photo luminescent devices,
Solar cell, display device, photodetector, bioprobe and device for non-linear optical etc., below only with QLED devices
It is illustrated for part.
Although quantum dot has been studied and developed more than 30 years as a kind of nano material of classics, quantum is utilized
The superior luminescence characteristics of point simultaneously apply the search time in QLED devices and corresponding display technology as luminescent material
It is also very short；Therefore the R and D of the QLED devices of the overwhelming majority are all based on the quantum dot for having classical architecture system at present
Material, the standard of screening and the optimization of corresponding quanta point material is also substantially from the luminescent properties such as quantum of quantum dot itself
The luminous peak width of point, solution quantum yield etc. set out.More than quantum dot is directly applied in QLED device architectures so as to obtain
Corresponding device performance result.
But the photoelectric device system of QLED devices and corresponding display technology as a set of complexity, there is all various factors
It can influence the performance of device.List is from the quanta point material as core emitting layer material, the quantum dot performance of required tradeoff
Index will be much more complex.
First, quantum dot is existing in the form of quantum dot light emitting layer solid film in QLED devices, therefore quantum
Originally obtained every luminescent properties parameter can show apparent difference to point material after solid film is formed in the solution：
Such as glow peak wavelength has different degrees of red shift in solid film（It is moved to long wavelength）, shine peak width can become larger,
Quantum yield has different degrees of reduction, that is to say, that the superior luminescence performance of quanta point material in the solution can not be complete
It is inherited into the quantum dot solid film of QLED devices.Therefore in the structure and synthesizing formula for designing and optimizing quanta point material
When, the hair of the luminescent properties optimization and quanta point material of quanta point material itself under solid film state need to be considered simultaneously
Optical property, which is inherited, to be maximized.
Secondly, the luminous of quanta point material is realized by electroexcitation in QLED devices, i.e., respectively from QLED
Anode and cathodal closing the injection hole of device and electronics, hole and electronics are existed by the transmission of corresponding function layer in QLED devices
After quantum dot light emitting layer is compound, emitted by way of radiation transistion photon realize shine.From above procedure as can be seen that amount
It is to influence the efficiency of radiation transistion in the above process that son, which puts the luminescent properties of itself such as luminous efficiency, and QLED devices is whole
Body luminous efficiency can also simultaneously by hole in the above process and electronics in quanta point material charge injection and efficiency of transmission,
Relative charge balance in quanta point material of hole and electronics, the recombination region of hole and electronics in quanta point material etc.
It influences.Therefore when designing and optimizing the fine nanometer nuclear shell nano-structure of structure especially quantum dot of quanta point material, weight is also needed
Point considers that quantum dot forms the later electric property of solid film：Such as the charge of quantum dot injects and conductive performance, quantum dot
Fine band structure, quantum dot exciton lifetime etc..
Finally, it is contemplated that QLED devices and corresponding display technology future will pass through the solution rule of great production cost advantage
If prepared by ink-jet printing, therefore the design of material of quantum dot and exploitation need to consider the processing performance of quantum dot solution,
Such as the dispersible dissolubility of quantum dot solution or marking ink, colloidal stability, it is printed as film property etc..Meanwhile quantum dot material
The exploitation of material will also be cooperateed with the whole preparation process flow and requirement of other functional layer materials of QLED devices and device.
In short, traditional only being designed from the quantum-dot structure for promoting quantum dot itself luminescent properties consideration is can not to expire
Sufficient QLED devices and corresponding display technology are various in optical property, electric property, processing performance etc. for quanta point material
Composite request.The requirement for QLED devices and corresponding display technology is needed, to the fine nucleocapsid knot of quantum dot light emitting material
Structure, component, energy level etc. carry out customized.
Due to the high surface atom ratio of quantum dot, not with surface ligand（Ligand）Form non-covalent bond（Dangling
bond）Atom will exist with surface defect state, this surface defect state will cause the transition of non-radiative pathway so that
The photoluminescence quantum yield of quantum dot is substantially lowered.To solve this problem, it can grow and include in former quantum dot superficies
The semiconductor shell of another semi-conducting material forms the nucleocapsid of quantum dot（core-shell）Structure, can the amount of significantly improving
The luminescent properties of son point, while increase the stability of quantum dot.
Can be applied to the quanta point material of high-performance QLED devices exploitation predominantly has the quantum dot of nucleocapsid,
Fixed and nucleocapsid has clear and definite boundary, such as the quantum dot (J. with CdSe/ZnS nucleocapsids respectively for core and shell component
Phys. Chem., 1996,100 (2), 468-471), there is quantum dot (the J. Am. of CdSe/CdS nucleocapsids
Chem. Soc. 1997,119, (30), 7019-7029), the quantum dot with CdS/ZnS nucleocapsids, with CdS/
The quantum dot (7,919,012 B2 of Patent US) of CdSe/CdS cores+multilayer shell structurre, have CdSe/CdS/ZnS cores+
Quantum dot (J. Phys. Chem. B, 2004,108 (49), 18826-18831) of multilayer shell structurre etc..At these
In the quantum dot of nucleocapsid, usually the constituent of core and shell is fixed and different, and is usually by a kind of sun
The binary compound system of ion and a kind of anion composition.In this configuration, since the growth of core and shell is independent difference
It carries out, therefore the boundary between core and shell is clear and definite, i.e., core and shell can be distinguished.The exploitation of this nuclear shell structure quantum point
Improve luminous quantum efficiency, monodispersity and the quantum dot stability of original single component quantum dot.
Although the quantum dot part of nucleocapsid described above improves quantum dot performance, from mentality of designing or
From prioritization scheme or from the aspect of the luminous efficiency based on promotion quantum dot itself, luminescent properties need to be improved,
In addition other aspect particular/special requirements of semiconductor devices for quanta point material are not considered yet.
At present, liquid crystal display (TFT-LCD) has developed quite ripe as the display of current more mainstream.
In existing liquid crystal display device, generally use white light emitting diode (LED) passes through light guide plate and light as back light
Learn the backlight needed for the reasonably combined realization liquid crystal of diaphragm.The white light LEDs in backlight module are applied, there are mainly two types of：It is a kind of
It is the blue light sent out by LED itself, excites yellow fluorescent powder, dichromatism is mixed to form white light；Another kind is that LED unit passes through
Primitive colours LED light source is mixed to form white light；The third is LED blue lights, passes through excitated red and green two amounts point fluorescence
Powder, three coloured light are mixed to form white light.Wherein the third method is a kind of more method of present research, and this method can
The colour gamut of display is improved from 70%NTSC to 100%NTSC.
Semiconductor-quantum-point is that have unique optical property and the nano size particles of electrology characteristic, is currently under model
Enclose during extensive conceptual phase turns to application, application field include illumination, display, solar energy conversion and molecule and cell into
Picture.In recent years, quantum dot has been applied to field of display devices, can greatly improve display effect, improve colour vividness, colour gamut and
Colour rendering index etc. makes the colour gamut of display be increased to 110%NTSC from 70%NTSC.Red and green quantum dot can be placed on
On three kinds of positions：First is on LED chip；Second is at the edge of light guide plate；Third is in backlight module.The first position
The dosage for putting quantum dot is seldom, but LED chip has very high temperature, and quantum dot service life is short.The third is usually amount
Son point is distributed on diaphragm, and farthest from LED, temperature is low, but quantum dot dosage is big, of high cost.Second of quantum dot dosage is situated between
Between the first and second, it is proper generally to use large-sized monitor.
Since quantum dot is of high cost, what research was more now is that the third quantum dot is distributed on diaphragm, is mainly examined
What is considered is the higher small size LCD screen of added value.Since the quantum yield of quantum dot is certain, so how to improve
Light conversion ratio is the key that reduce cost.
Therefore, the prior art has yet to be improved and developed.
Invention content
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of quantum dot film and its preparation sides
Method, it is intended to solve the problems, such as existing quantum dot be distributed to diaphragm after light conversion ratio it is still relatively low.
Technical scheme is as follows：
A kind of quantum dot film, wherein, by weight percentage, including following component：
Quantum dot：0.01-40.0%；The quantum dot includes at least one quantum-dot structure arranged successively in radial directions
Unit, graded alloy component structure or in the radial direction of the quantum-dot structure unit for the variation of level width in the radial direction
The consistent homogeneous components structure of level width；
Disperse the medium of quantum dot：60.0-99.99%.
The quantum dot film, wherein, the quantum-dot structure unit is more outside level width in the radial direction
Wider graded alloy component structure, and the energy level of quantum-dot structure unit adjacent in radial directions is continuous.
The quantum dot film, wherein, the quantum dot includes at least three amounts arranged successively in radial directions
Son point structural unit, wherein, in at least three quantum-dot structures unit, the quantum-dot structure unit positioned at center and surface
It is the graded alloy component structure that more outside level width is wider in the radial direction, and gradual change adjacent in radial directions is closed
The energy level of the quantum-dot structure unit of golden component structure is continuous；Between center and the quantum-dot structure unit on surface
One quantum-dot structure unit is homogeneous components structure.
The quantum dot film, wherein, the quantum dot includes two kinds of quantum-dot structure unit, one of which
The quantum-dot structure unit of type is the wider graded alloy component structure of more outside level width in the radial direction, another type
The quantum-dot structure unit of type is the narrower graded alloy component structure of more outside level width in the radial direction, described two classes
The quantum-dot structure unit of type is radially alternately distributed successively, and quantum-dot structure unit adjacent in radial directions
Energy level is continuous.
The quantum dot film, wherein, the quantum-dot structure unit is more outside level width in the radial direction
Wider graded alloy component structure, and the energy level of adjacent quantum-dot structure unit is discontinuous.
The quantum dot film, wherein, the quantum-dot structure unit is more outside level width in the radial direction
Narrower graded alloy component structure, and the energy level of adjacent quantum-dot structure unit is discontinuous.
The quantum dot film, wherein, the quantum dot includes two amounts point structural unit, one of which quantum dot
Structural unit is the wider graded alloy component structure of more outside level width in the radial direction, another quantum-dot structure unit
For homogeneous components structure, the inside of the quantum dot includes the quantum dot knot of one or more graded alloy component structure
Structure unit, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions is continuous；Institute
The outside for stating quantum dot includes the quantum-dot structure unit of one or more homogeneous components structure.
The quantum dot film, wherein, the quantum dot includes two amounts point structural unit, one of which quantum dot
Structural unit is homogeneous components structure, and another quantum-dot structure unit is wider gradually for more outside level width in the radial direction
Become alloy compositions structure, the inside of the quantum dot includes the quantum-dot structure list of one or more homogeneous components structure
Member, the outside of the quantum dot include the quantum-dot structure unit of one or more graded alloy component structure, and
The energy level of the quantum-dot structure unit of adjacent graded alloy component structure is continuous in the radial direction.
The quantum dot film, wherein, the quantum-dot structure unit is closed for the gradual change comprising II races and VI races element
Golden component structure or uniform alloy compositions structure.
The quantum dot film, wherein, each quantum-dot structure unit include 2-20 layers of monoatomic layer or
Each quantum-dot structure unit includes 1-10 layers of structure cell layer.
The quantum dot film, wherein, the glow peak wave-length coverage of the quantum dot is 400 nanometers to 700 nanometers.
The quantum dot film, wherein, the peak width at half height of the glow peak of the quantum dot is 12 nanometers to 80 nanometers.
The quantum dot film, wherein, the medium includes at least one high molecular material.
The quantum dot film, wherein, the medium includes at least one macromolecule prepolymer material.
The quantum dot film, wherein, the medium includes at least one oligomeric materials.
The quantum dot film, wherein, the medium includes at least one small molecule material.
The quantum dot film, wherein, the medium includes at least one inorganic material.
The quantum dot film, wherein, the medium includes at least one bulk media material.
The quantum dot film, wherein, the bulk media material includes at least one organic material.
The quantum dot film, wherein, the bulk media material includes at least one inorganic material.
The quantum dot film, wherein, the medium includes at least one nonpolar liquid.
The quantum dot film, wherein, the medium includes at least one polar liquid.
As above a kind of preparation method of any quantum dot film, wherein, including step：First, in accordance with above-mentioned formula
By quantum dot dispersion in the medium, it then stirs 20 ~ 40 minutes, obtains quantum dot film；Wherein, the quantum dot is included at least
One quantum-dot structure unit arranged successively in radial directions, the quantum-dot structure unit are wide for energy level in the radial direction
The graded alloy component structure of degree variation or the in the radial direction consistent homogeneous components structure of level width.
The preparation method of the quantum dot film, wherein, the preparation method of the quantum dot includes step：
The first compound is synthesized in pre-position；
Second of compound, the first described compound and second of compound are synthesized on the surface of the first compound
Alloy compositions are identical or different；
Cation exchange reaction occurs between the first compound and second of chemical combination object and forms quantum dot, the quantum dot
Glow peak wavelength occur blue shift, red shift and it is constant in it is one or more.
Advantageous effect：After the above-mentioned quantum dot film forming of the present invention, quantum dot film has high light conversion ratio；Above-mentioned quantum dot
Semiconductor devices made of film optically and electrically waits device performances with excellent.
Description of the drawings
Fig. 1 is a kind of level structure curve of quantum dot concrete structure 1 of the present invention.
Fig. 2 is a kind of level structure curve of quantum dot concrete structure 2 of the present invention.
Fig. 3 is a kind of level structure curve of quantum dot concrete structure 3 of the present invention.
Fig. 4 is a kind of level structure curve of quantum dot concrete structure 4 of the present invention.
Fig. 5 is a kind of level structure curve of quantum dot concrete structure 5 of the present invention.
Fig. 6 is a kind of level structure curve of quantum dot concrete structure 6 of the present invention.
Fig. 7 is a kind of level structure curve of quantum dot concrete structure 7 of the present invention.
Fig. 8 is the structure diagram of light emitting diode with quantum dots in the embodiment of the present invention 37.
Fig. 9 is the structure diagram of light emitting diode with quantum dots in the embodiment of the present invention 38.
Figure 10 is the structure diagram of light emitting diode with quantum dots in the embodiment of the present invention 39.
Figure 11 is the structure diagram of light emitting diode with quantum dots in the embodiment of the present invention 40.
Figure 12 is the structure diagram of light emitting diode with quantum dots in the embodiment of the present invention 41.
Figure 13 is the structure diagram of light emitting diode with quantum dots in the embodiment of the present invention 42.
Specific embodiment
The present invention provides a kind of quantum dot film and preparation method thereof, to make the purpose of the present invention, technical solution and effect
Clearer, clear and definite, the present invention is described in more detail below.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
The present invention provides a kind of quantum dot film, which is characterized in that by weight percentage, including following component：
Quantum dot：0.01-40.0%；The quantum dot includes at least one quantum-dot structure arranged successively in radial directions
Unit, graded alloy component structure or in the radial direction of the quantum-dot structure unit for the variation of level width in the radial direction
The consistent homogeneous components structure of level width；
Disperse the medium of quantum dot：60.0-99.99%.
Semiconductor devices optically and electrically waits device performances with excellent made of the above-mentioned quantum dot film of the present invention.
Preferably, the medium includes at least one high molecular material.Quantum dot film i.e. of the present invention include quantum dot and
One or more kinds of high molecular materials.The high molecular material can be but be not limited to phenolic resin, polyethylene, poly- diformazan
Radical siloxane（PDMS）, polystyrene, polymethacrylates, polyacrylate, one kind in makrolon etc..
Preferably, the medium includes at least one macromolecule prepolymer material.Quantum dot film i.e. of the present invention includes amount
Son point and one or more kinds of macromolecule prepolymer materials.The macromolecule prepolymer material can be but be not limited to methyl
Polyester prepolyer, epoxy prepolymer, the pyromellitic acid dianhydride of methyl acrylate prepolymer, phthalic acid and glycerine generation
With one kind in aromatic diamines prepolymer, phenolic resin prepolymer etc..
Preferably, the medium includes at least one oligomeric materials.Quantum dot film i.e. of the present invention include quantum dot and
One or more kinds of oligomeric materials.The oligomeric materials can be but be not limited to include dimer, tripolymer, four poly-
Body etc., for example, unsaturated polyester (UP), low molecular polyether, acrylate oligomer, carbonate oligomer, low molecular polyamides,
One kind in low molecular weight polyureas etc..
Preferably, the medium includes at least one small molecule material.Quantum dot film i.e. of the present invention include quantum dot and
One or more kinds of small molecule materials.The small molecule material can be but be not limited to organic small molecule material, such as three
(8-hydroxyquinoline) aluminium, α-NPD（bis[N-(1-naphthyl)-N-phenyl-amino] biphenyl）, oleic acid, 1- 18
Alkene etc. and inorganic molecules material are inorganic small such as metallic aluminium, metallic silver, zinc oxide, molybdenum oxide, cesium chloride, lithium carbonate
One kind in molecular material.
Preferably, the medium includes at least one inorganic material.Quantum dot film i.e. of the present invention includes quantum dot and one
Kind or more than one inorganic material.The inorganic material can be but be not limited to metallic aluminium, metallic silver, tin indium oxide, oxidation
One kind in zinc, molybdenum oxide, cesium chloride, lithium carbonate, quantum dot, nanometer rods, nano wire, nanometer sheet, glass etc..
Preferably, the medium includes at least one bulk media material.Quantum dot film i.e. of the present invention includes quantum dot
With one or more kinds of bulk media materials.It is highly preferred that the bulk media material includes at least one organic material,
The organic material can be but be not limited to three (8-hydroxyquinoline) aluminium, polymethyl methacrylate, dimethyl silicone polymer,
TFB（Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)
diphenylamine)]）、α-NPD（bis[N-(1-naphthyl)-N-phenyl-amino] biphenyl）, oleic acid, 1- ten
One kind in eight alkene, tri octyl phosphine etc..It is described or it is highly preferred that the bulk media material includes at least one inorganic material
Inorganic material can be but be not limited to metallic aluminium, metallic silver, tin indium oxide, zinc oxide, molybdenum oxide, cesium chloride, lithium carbonate, quantum
One kind in point, nanometer rods, nano wire, nanometer sheet, glass etc..
Preferably, the medium includes at least one nonpolar liquid.Quantum dot film i.e. of the present invention include quantum dot and
One or more kinds of nonpolar liquids, the nonpolar liquid can be but be not limited to toluene, chloroform, n-hexane, just pungent
One kind in alkane, tridecane, oleic acid, 1- octadecylenes etc..
Preferably, the medium includes at least one polar liquid.Quantum dot film i.e. of the present invention includes quantum dot and one
Kind or more than one polar liquid, the polar liquid can be but be not limited to water, methanol, ethyl alcohol, butanol, octanol, diformazan
One kind in base formamide, dimethyl sulfoxide (DMSO) etc..
Quantum dot provided by the present invention, including at least one quantum-dot structure list arranged successively in radial directions
Member, the quantum-dot structure unit are the graded alloy component structure or in the radial direction can that level width changes in the radial direction
The consistent homogeneous components structure of level width.
That is in quantum dot provided by the invention, inside each quantum-dot structure unit radially from the inside to the outside
It is the structure with alloy compositions in the range of one layer of monoatomic layer or one layer or more of monoatomic layer in upper any position.
Further, in the present invention, the quantum-dot structure unit includes II races and VI races element.The II races element packet
It includes but is not limited to Zn, Cd, Hg, Cn etc.；VI races element includes but not limited to O, S, Se, Te, Po, Lv etc..Specifically, each
The alloy compositions composition of quantum-dot structure unit is CdxZn1-xSeyS1-y, wherein 0≤x≤1,0≤y≤1, and x and y differences
When be 0 and be asynchronously 1.It should be noted that the above situation is preferable case, for the quantum dot knot of graded alloy component structure
For structure unit, component is alloy compositions；And for the quantum-dot structure unit of homogeneous components structure, component can
To be alloy compositions or non-alloyed component, but currently preferred is alloy compositions, i.e., described homogeneous components structure is
Uniform alloy compositions structure, it is further preferred that comprising II races and VI races element, subsequent embodiment of the present invention is with uniform alloy group
It is illustrated for separation structure, it will be clear that can equally implement for unalloyed homogeneous components structure.
Radial direction herein refers to the center outwardly direction from quantum dot, it is assumed for example that quantum dot of the invention is ball
Shape or similar spherical structure, then the radial direction refers to the direction along radius, the center of quantum dot（It is or internal）Refer to its object
Manage the center of structure, the surface of quantum dot（It is or external）Refer to the surface of its physical arrangement.
Structure existing for quantum dot of the present invention is described in detail below：
Specifically, as shown in Figure 1, the present invention provides a kind of quantum dot with funnel type level structure, positioned at the quantum
Quantum-dot structure unit alloy constituent inside point corresponds to level width and is less than positioned at external quantum-dot structure unit conjunction
Golden constituent corresponds to level width；Specifically, quantum dot provided by the invention include it is at least one in radial directions according to
The quantum-dot structure unit of secondary arrangement, the quantum-dot structure unit are the wider gradual change of more outside level width in the radial direction
Alloy compositions structure, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions is continuous
's；The structure of quantum dot shown in Fig. 1 is known as concrete structure 1 in subsequent embodiment.Quantum dot in Fig. 1, each adjacent amount
The level width of son point structural unit has continuous structure, i.e., the level width of each adjacent quantum-dot structure unit, which has, to be connected
The characteristics of continuous variation rather than mutation structure, that is to say, that the alloy compositions of quantum dot are also the subsequent continuous knot with continuity
Structure principle is identical.
Further, in radial directions in adjacent quantum-dot structure unit, by paracentral quantum-dot structure unit
Level width is less than the level width of deep quantum-dot structure unit；That is, in the quantum dot, from center
Level width to surface gradually broadens, and so as to form the funnel type structure that opening becomes larger, opening therein is gradual
Become larger and refer in level structure as shown in Figure 1, the energy level from quantum dot center to quantum dot surface is continuous.Meanwhile this
Quantum dot in invention, the energy level of each adjacent quantum-dot structure unit are continuous, that is to say, that the synthesis group of quantum dot
Dividing also has the characteristic of consecutive variations, and this characteristic is more advantageous to realizing high luminous efficiency.
That is, the concrete structure 1 of the quantum dot is closed with continuous gradation from inside to outside radially
The quantum-dot structure of golden component；This quantum-dot structure has from inside to outside radially consecutive variations in constituent
Feature；Correspondingly, energy level distribution on also on there are from inside to outside radially consecutive variations；This quantum dot knot
Structure in constituent and energy level distribution on consecutive variations the characteristics of, relative to the quantum dot core on clear and definite boundary and the pass of shell
System, quantum dot of the invention not only contribute to realize more efficient luminous efficiency, while also can more meet semiconductor devices and phase
Comprehensive performance requirement of the display technology to quantum dot is answered, is a kind of suitable semiconductor devices and the preferable quantum dot hair of display technology
Luminescent material.
Further, in the quantum dot provided such as Fig. 1, the alloy compositions of A points are Cdx0 AZn1-x0 ASey0 AS1-y0 A, B points
Alloy compositions are Cdx0 BZn1-x0 BSey0 BS1-y0 B, wherein A points relative to B points closer to quantum dot center, and the group of A points and B points
Into satisfaction：x0 A>x0 B,y0 A >y0 B.That is, for any two points A points and B points in quantum dot, and A points relative to B points more
Close to quantum dot center, thenx0 A>x0 B,y0 A >y0 B, i.e. the Cd contents of A points are more than the Cd contents of B points, and the Zn contents of A points are less than B
The Zn contents of point, the Se contents of A points are more than the Se contents of B points, and the S contents of A points are less than the S contents of B points.In this way, in the quantum
In point, grading structure is just formd in radial directions, and due in radial directions, it is more outside（I.e. far from quantum dot
The heart）Then Cd and Se contents are lower, Zn and S contents are higher, then according to the characteristic of these types of element, level width will be got over
It is wide.
In the quantum dot of follow-up difference concrete structure, if quantum-dot structure unit is more outside level width in the radial direction
Wider graded alloy component structure, then its alloy compositions be both preferably Cdx0Zn1-x0Sey0S1-y0, wherein, the alloy compositions of A points
For Cdx0 AZn1-x0 ASey0 AS1-y0 A, the alloy compositions of B points are Cdx0 BZn1-x0 BSey0 BS1-y0 B, wherein A points relative to B points closer to
Quantum dot center, and the composition of A points and B points meets：x0 A>x0 B,y0 A >y0 B.If quantum-dot structure unit in the radial direction more to
The narrower graded alloy component structure of outer level width, then its alloy compositions be both preferably Cdx0Zn1-x0Sey0S1-y0, wherein, C points
Alloy compositions be Cdx0 CZn1-x0 CSey0 CS1-y0 C, the alloy compositions of D points are Cdx0 DZn1-x0 DSey0 DS1-y0 D, wherein C points relative to
D points are closer to quantum dot center, and the composition of C points and D points meets：x0 C＜x0 D,y0 C＜y0 D.If quantum-dot structure unit is uniform
Alloy compositions structure（I.e. level width is consistent in the radial direction）, then its alloy compositions be both preferably Cdx0Zn1-x0Sey0S1-y0,
In, the alloy compositions of E points are Cdx0 EZn1-x0 ESey0 ES1-y0 E, the alloy compositions of F points are Cdx0 FZn1-x0 FSey0 FS1-y0 F, wherein E points
Relative to F points closer to quantum dot center, and the composition of E points and F points meets：x0 E=x0 F,y0 E=y0 F。
Further, as shown in Fig. 2, having inner alloy constituent the present invention also provides one kind, to correspond to level width little
It is corresponded between level width and quantum-dot structure bosom and most external region containing at least one layer in exterior alloy constituent
The quantum dot of the quantum-dot structure unit of uniform alloy compositions structure；That is, quantum dot provided by the invention is included at least
Three quantum-dot structure units arranged successively in radial directions, wherein, in at least three quantum-dot structures unit, position
Quantum-dot structure unit in center and surface is the graded alloy component knot that more outside level width is wider in the radial direction
Structure, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions is continuous, in being located at
A quantum-dot structure unit between the heart and the quantum-dot structure unit on surface is uniform alloy compositions structure.Subsequent embodiment
The middle structure by quantum dot shown in Fig. 2 is known as concrete structure 2.
Specifically, as Fig. 2 provide quantum dot in, it is described between center and the quantum-dot structure unit on surface one
On the quantum-dot structure unit of the uniform alloy compositions structure of layer, the alloy compositions of any point are Cdx1Zn1-x1Sey1S1-y1, wherein 0
≤ x1≤1,0≤y1≤1, and be 0 during x1 with y1 differences and be asynchronously 1, and x1 and y1 is fixed value.Such as certain point
Alloy compositions are Cd0.5Zn0.5Se0.5S0.5, and the alloy compositions of another point also should be Cd in the radial direction0.5Zn0.5Se0.5S0.5；
In another example the homogeneous components of certain point are Cd in the quantum-dot structure unit of a certain uniform alloy compositions structure0.7Zn0.3S, and be somebody's turn to do
The alloy compositions of another point also should be Cd in quantum-dot structure unit0.7Zn0.3S；In another example a certain uniform alloy compositions structure
In quantum-dot structure unit the homogeneous components of certain point be CdSe, and in the quantum-dot structure unit another point alloy compositions
It should be CdSe.
Further, as in the quantum dot of Fig. 2 offers, the quantum-dot structure unit positioned at center and surface is radial direction
On more outside level width wider graded alloy component structure, and graded alloy component structure adjacent in radial directions
The energy level of quantum-dot structure unit is continuous；I.e. described in the quantum-dot structure unit of graded alloy component structure,
Radially the corresponding level width of alloy constituent of upper any point is greater than adjacent and closer to quantum dot knot
The corresponding level width of alloy constituent of structure center another point.The quantum-dot structure with graded alloy component structure
Alloy compositions composition in unit is Cdx2Zn1-x2Sey2S1-y2, wherein 0≤x2≤1,0≤y2≤1, and during x2 with y2 differences
It is 0 and be asynchronously 1.Such as the alloy compositions of certain point are Cd0.5Zn0.5Se0.5S0.5, and the alloy compositions of another point are
Cd0.3Zn0.7Se0.4S0.6。
Further, as shown in figure 3, the present invention also provides a kind of quantum of the full graded alloy component with quantum well structure
Point；That is, quantum dot provided by the invention includes two kinds of quantum-dot structure unit（A1 types and A2 types）,
The quantum-dot structure unit of middle A1 types is the wider graded alloy component structure of more outside level width in the radial direction, A2 classes
The quantum-dot structure unit of type is the narrower graded alloy component structure of more outside level width in the radial direction, described two amounts
Son point structural unit is radially alternately distributed, and the energy level of quantum-dot structure unit adjacent in radial directions is successively
Continuously.That is, the quantum-dot structure cell distribution of the quantum dot can be：A1, A2, A1, A2, A1 ..., can also
It is A2, A1, A2, A1, A2 ..., that is, the quantum-dot structure unit originated can be A1 types or A2 types.In A1 types
Quantum-dot structure unit in, level width is more more outside wider, and in the quantum-dot structure unit of A2 types, energy level is wide
Degree is more more outside narrower, both level structures extend in radial directions like the form of wave, in subsequent embodiment
The structure of quantum dot shown in Fig. 3 is known as concrete structure 3.
Further, as shown in figure 4, the present invention also provides a kind of alloy compositions of the quantum well structure with energy level mutation
Quantum dot, specifically, the quantum-dot structure unit are the graded alloy group that more outside level width is wider in the radial direction
Separation structure, and the energy level of adjacent quantum-dot structure unit is discontinuous, i.e., the energy of each adjacent quantum-dot structure unit
Level width has the characteristics that discontinuous variation, that is, is mutated feature, that is to say, that the alloy compositions of quantum dot be also with mutability,
Subsequent mutation structure principle is identical；The structure of quantum dot shown in Fig. 4 is known as concrete structure 4 in subsequent embodiment.
Specifically, the quantum dot described in Fig. 4 is arranged successively by way of mutation structure by multiple quantum-dot structure units
Into these quantum-dot structure units are the graded alloy component structure that more outside level width is wider in the radial direction.Into one
It walks, in the quantum dot, is less than deep quantum-dot structure list by the level width of paracentral quantum-dot structure unit
The level width of member.That is, in the quantum dot, gradually broaden from the level width of center to face, so as to
The funnel type structure that the opening of interruption becomes larger is formed, certainly, in the quantum dot, is also not limited to aforesaid way, i.e.,
The level width of deep quantum-dot structure unit might be less that the energy level by paracentral quantum-dot structure unit is wide
It spends, in this structure, the level width of adjacent quantum-dot structure unit has the place being overlapping.
Further, as shown in figure 5, having the alloy compositions of the quantum well structure of energy level mutation the present invention also provides another kind
Quantum dot, specifically, the quantum-dot structure unit is the graded alloy that more outside level width is narrower in the radial direction
Component structure, and the energy level of adjacent quantum-dot structure unit be it is discontinuous, i.e., each adjacent quantum-dot structure unit
Level width has the characteristics that discontinuous variation, that is, is mutated feature, that is to say, that the alloy compositions of quantum dot are also to have mutation
Property, subsequent mutation structure principle is identical；The structure of quantum dot shown in Fig. 5 is known as concrete structure 5 in subsequent embodiment.
Specifically, the quantum dot described in Fig. 5 is arranged successively by way of mutation structure by multiple quantum-dot structure units
Into these quantum-dot structure units are the graded alloy component structure that more outside level width is narrower in the radial direction.Into one
It walks, in the quantum dot, is more than deep quantum-dot structure list by the level width of paracentral quantum-dot structure unit
The level width of member.That is, in the quantum dot, become narrow gradually from the level width of center to face, so as to
The gradually smaller funnel type structure of opening of interruption is formed, certainly, in the quantum dot, is also not limited to aforesaid way, i.e.,
The level width of deep quantum-dot structure unit, which can also be more than, leans on the energy level of paracentral quantum-dot structure unit wide
It spends, in this structure, the level width of adjacent quantum-dot structure unit has the place being overlapping.
Further, as shown in fig. 6, the present invention also provides a kind of quantum dot, the alloy composition inside the quantum dot
The level width of ingredient is become larger by center to outside, and quantum-dot structure most external region is uniform alloy compositions；Specifically
Ground, the quantum dot include two amounts point structural unit（A3 types and A4 types）, wherein, the quantum-dot structure list of A3 types
Member is the wider graded alloy component structure of more outside level width in the radial direction, and the quantum-dot structure unit of A4 types is equal
One alloy compositions structure, the inside of the quantum dot include the quantum of one or more graded alloy component structure
Point structural unit, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions is continuous
's；The outside of the quantum dot includes the quantum-dot structure unit of one or more uniform alloy compositions structure；Subsequently
The structure of quantum dot shown in Fig. 6 is known as concrete structure 6 in embodiment.
Specifically, in quantum dot as shown in Figure 6, quantum-dot structure unit is distributed as A3 ... A3A4 ... A4, i.e. institute
The inside for stating quantum dot is made of the quantum-dot structure unit of A3 types, and the outside of the quantum dot is by the quantum of A4 types
Point structural unit composition, and the quantity of the quantum-dot structure unit of the quantity and A4 types of the quantum-dot structure unit of A3 types is equal
More than or equal to 1.
Further, as shown in fig. 7, the present invention also provides another quantum dot, the alloy group inside the quantum dot
Into ingredient level width to be uniform, the level width of the alloy constituent outside the quantum dot is by center to outside
Portion is becomes larger；Specifically, the quantum dot includes two amounts point structural unit（A5 types and A6 types）, wherein, A5
The quantum-dot structure unit of type is uniform alloy compositions structure, the quantum-dot structure units of A6 types in the radial direction more to
The wider graded alloy component structure of outer level width, the inside of the quantum dot include one or more uniform alloy
The quantum-dot structure unit of component structure；The outside of the quantum dot includes one or more graded alloy component structure
Quantum-dot structure unit, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions is
Continuously；The structure of quantum dot shown in Fig. 7 is known as concrete structure 7 in subsequent embodiment.
Specifically, in quantum dot as shown in Figure 7, monoatomic layer is distributed as A5 ... A5A6 ... A6, i.e., described quantum
The inside of point is made of the quantum-dot structure unit of A5 types, and the outside of the quantum dot is by the quantum-dot structure of A6 types
Unit forms, and the quantity of the quantum-dot structure unit of the quantity and A6 types of the quantum-dot structure unit of A5 types is all higher than
In 1.
Further, quantum-dot structure unit provided by the present invention includes 2-20 layers of monoatomic layer.Preferably, the amount
Son point structural unit includes 2-5 monoatomic layer, and the preferred number of plies can ensure that quantum dot realizes good photoluminescence quantum yield
And efficient charge injection efficiency.
Further, the quantum dot light emitting unit includes 1-10 layer crystals born of the same parents layer, preferably 2-5 layer crystals born of the same parents layer；The structure cell layer
For minimum structural unit, i.e., its alloy compositions of each layer of structure cell layer are fixed, i.e., have the phase isomorphous in each structure cell layer
Lattice parameter and element, the closed unit cell curved surface that each quantum-dot structure unit is the connection of structure cell layer and forms, adjacent cell layer
Between level width have continuous structure or mutation structure.
The quantum dot of the present invention using the above structure, the photoluminescence quantum yield that can be realized ranging from 1% to 100%, preferably
Photoluminescence quantum yield ranging from 30% to 100%, can ensure well should for quantum dot in the range of preferred photoluminescence quantum yield
The property used.
The quantum dot, wherein, the glow peak wave-length coverage of the quantum dot is 400 nanometers to 700 nanometers.
The quantum dot of the present invention using the above structure, the glow peak wave-length coverage that can be realized are received for 400 nanometers to 700
Rice, preferred glow peak wave-length coverage are 430 nanometers to 660 nanometers, and preferred quantum dot light emitting peak wave-length coverage can ensure
Quantum dot realizes the photoluminescence quantum yield more than 30% within this range.
Further, in the present invention, the peak width at half height of the glow peak of the quantum dot is 12 nanometers to 80 nanometers.
Quantum dot provided by the present invention has the advantages that：First, help to reduce different conjunctions to the full extent
Lattice tension between the quantum dot crystal of golden component simultaneously alleviates lattice mismatch, so as to reduce the formation of boundary defect, improves
The luminous efficiency of quantum dot.Second, the level structure that quantum dot provided by the present invention is formed is more advantageous to in quantum dot
Effective constraint of electron cloud greatly reduces diffusion probability of the electron cloud to quantum dot surface, so as to greatly inhibit quantum dot
The auger recombination loss of radiationless transition, reduces quantum dot and flickers and improve quantum dot light emitting efficiency.Third, it is provided by the present invention
The level structure that is formed of quantum dot be more advantageous to improving in semiconductor devices the injection efficiency of quantum dot light emitting layer charge and
Efficiency of transmission；It can effectively avoid the aggregation of charge and resulting Exciton quenching simultaneously.4th, it is provided by the present invention
The easily controllable diversity level structure that quantum dot is formed can fully meet the energy of other functional layers in simultaneously coordination device
Level structure, to realize the matching of device entirety level structure, so as to help to realize efficient semiconductor devices.
Based on above-mentioned quantum dot film, the present invention also provides the preparation sides of a kind of as above any quantum dot film
Method, including step：Quantum dot is scattered in medium first, then stirs 20 ~ 40 minutes to get quantum dot film；It is described
Quantum dot includes at least one quantum-dot structure unit arranged successively in radial directions, and the quantum-dot structure unit is diameter
The graded alloy component structure or the consistent homogeneous components structure of level width in the radial direction that level width changes on direction.
The quantum dot film that the present invention is obtained has good filming performance and machinability especially impressionability.And this
Semiconductor devices made of invention quantum dot film has excellent optically and electrically performance.
Specifically, the present invention also provides a kind of preparation method of quantum dot as described above, wherein, including step：
The first compound is synthesized in pre-position；
Second of compound, the first described compound and second of compound are synthesized on the surface of the first compound
Alloy compositions are identical or different；
Cation exchange reaction occurs between the first compound and second of chemical combination object and forms quanta point material, the quantum
Point glow peak wavelength occur blue shift, red shift and it is constant in it is one or more.
Quantum dot SILAR synthetic methods incorporating quantum point one-step synthesis is generated quantum dot, tool by the preparation method of the present invention
Body is using quantum dot SILAR synthetic method precise control amount sub- points successively grows and is formed gradually using quantum dot one-step synthesis
Become component transition shell.Two layers of compound thin film with different-alloy component is successively formed in pre-position, by making two
Cation exchange reaction occurs between layer compound, is distributed so as to fulfill in the alloy compositions of pre-position.Repeat more than
Journey can constantly realize the alloy compositions distribution in radial direction pre-position.
Described the first compound and second of compound can be binary or binary more than compound.
Further, when blue shift occurs in the glow peak wavelength of the quantum dot, illustrate that glow peak is moved to shortwave length direction,
Level width broadens；When red shift occurs in the glow peak wavelength of the quantum dot, represent glow peak and moved to long wave direction, energy level
Width narrows；When the glow peak wavelength of the quantum dot is constant, illustrate that level width is constant.
The cationic presoma of the first described compound and/or second of compound includes：The presoma of Zn, institute
The presoma for stating Zn is from zinc methide（dimethyl Zinc）, diethyl zinc（diethyl Zinc）, zinc acetate
（Zinc acetate）, zinc acetylacetonate（Zinc acetylacetonate）, zinc iodide（Zinc iodide）, zinc bromide
（Zinc bromide）, zinc chloride（Zinc chloride）, zinc fluoride（Zinc fluoride）, zinc carbonate（Zinc
carbonate）, zinc cyanide（Zinc cyanide）, zinc nitrate（Zinc nitrate）, zinc oxide（Zinc oxide）, peroxide
Change zinc（Zinc peroxide）, zinc perchlorate（Zinc perchlorate）, zinc sulfate（Zinc sulfate）, zinc oleate
（Zinc oleate）Or zinc stearate（Zinc stearate）At least one of Deng, but not limited to this.
The cationic presoma of the first described compound and/or second of compound includes the presoma of Cd, institute
The presoma for stating Cd is dimethyl cadmium（dimethyl cadmium）, diethyl cadmium（diethyl cadmium）, cadmium acetate
（cadmium acetate）, acetylacetone,2,4-pentanedione cadmium（cadmium acetylacetonate）, cadmium iodide（cadmium iodide）、
Cadmium bromide（cadmium bromide）, caddy（cadmium chloride）, cadmium fluoride（cadmium fluoride）, carbon
Sour cadmium（cadmium carbonate）, cadmium nitrate（cadmium nitrate）, cadmium oxide（cadmium oxide）, perchloric acid
Cadmium（cadmium perchlorate）, cadmium phosphate（cadmium phosphide）, cadmium sulfate（cadmium sulfate）, oil
Sour cadmium（cadmium oleate）Or cadmium stearate（cadmium stearate）At least one of Deng, but not limited to this.
The anion presoma of the first described compound and/or second of compound includes the presoma of Se, example
As Se with some organic matters arbitrarily combines formed compound, specifically Se-TOP (selenium-
trioctylphosphine)、Se-TBP (selenium-tributylphosphine)、Se-TPP (selenium-
triphenylphosphine)、Se-ODE (selenium-1-octadecene)、Se-OA (selenium-oleic
acid)、Se-ODA (selenium-octadecylamine)、Se-TOA (selenium-trioctylamine)、Se-
In ODPA (selenium-octadecylphosphonic acid) or Se-OLA (selenium-oleylamine) etc.
At least one, but not limited to this.
The anion presoma of the first described compound and/or second of compound includes the presoma of S, such as
S arbitrarily combines formed compound, specifically S-TOP (sulfur-trioctylphosphine), S- with some organic matters
TBP(sulfur-tributylphosphine) 、S-TPP(sulfur-triphenylphosphine)、S-ODE
(sulfur-1-octadecene) 、S-OA (sulfur-oleic acid)、S-ODA(sulfur-octadecylamine)、
S-TOA (sulfur-trioctylamine), S-ODPA (sulfur-octadecylphosphonic acid) or S-OLA
At least one of (sulfur-oleylamine) etc., but not limited to this；The presoma of the S is alkyl hydrosulfide (alkyl
Thiol), the alkyl hydrosulfide is hexyl mercaptan (hexanethiol), spicy thioalcohol (octanethiol), decyl mercaptan
(decanethiol), lauryl mercaptan (dodecanethiol), hexadecyl mercaptan (hexadecanethiol) or mercaptos
At least one of propyl silane (mercaptopropylsilane) etc., but not limited to this.
The anion presoma of the first described compound and/or second of compound further includes the presoma of Te,
The presoma of the Te is Te-TOP, Te-TBP, Te-TPP, Te-ODE, Te-OA, Te-ODA, Te-TOA, Te-ODPA or Te-
At least one of OLA.
In the preparation process in accordance with the present invention, the condition that cation exchange reaction occurs is to carry out heating reaction, such as heat
Temperature is between 100 DEG C to 400 DEG C, between preferred heating temperature is 150 DEG C to 380 DEG C.Heating time 2s to for 24 hours it
Between, preferred heating time is 5min between 4h.
Above-mentioned cation precursor and anion presoma can form to determine to select it according to final nanocrystal
One or more of：Such as it needs to synthesize CdxZn1-xSeyS1-yNanocrystal when, then need the presoma of Cd, the forerunner of Zn
Body, the presoma of Se, S presoma；If desired for synthesis CdxZn1-xDuring the nanocrystal of S, then the presoma of Cd, Zn are needed
The presoma of presoma, S；If desired for synthesis CdxZn1-xDuring the nanocrystal of Se, then need the presoma of Cd, the presoma of Zn,
The presoma of Se.
Heating temperature is higher, and the rate of cation exchange reaction is faster, the thickness range of cation exchange and exchange degree
Also it is bigger, but thickness and extent and scope can progressively reach the degree of relative saturation；Similar, heating time is longer, and cation is handed over
The thickness range and exchange degree changed is also bigger, but thickness and extent and scope can also progressively reach the degree of relative saturation.Sun from
The thickness range and degree that son exchanges directly determine formed graded alloy component distribution.Cation exchange is formed gradually
Become alloy compositions distribution also to be determined by the binary or the thickness of multi-element compounds nanocrystal that are respectively formed simultaneously.
When forming each layer compound, the molar ratio of cationic presoma and anion presoma can be 100:1 to 1:
50（The specially molar feed ratio of cation and anion）, such as when forming first layer compound, cationic presoma with
The molar ratio of anion presoma is 100:1 to 1:50；When forming second layer compound, before cationic presoma and anion
The molar ratio for driving body is 100:1 to 1:50, preferred ratio is 20:1 to 1:10, preferred cation presoma with before anion
Driving the molar ratio of body can ensure reaction rate in easily controllable range.
By the quantum dot prepared by above-mentioned preparation method, glow peak wave-length coverage is 400 nanometers to 700 nanometers, excellent
The glow peak wave-length coverage of choosing is 430 nanometers to 660 nanometers, and preferred quantum dot light emitting peak wave-length coverage can ensure quantum dot
The photoluminescence quantum yield more than 30% is realized within this range.
Quantum dot prepared by method made above, photoluminescence quantum yield ranging from 1% to 100%, preferred luminescent quantum
Yield ranging from 30% to 100% can ensure the applications well of quantum dot in the range of preferred photoluminescence quantum yield.
Further, in the present invention, the peak width at half height of the glow peak of the quantum dot is 12 nanometers to 80 nanometers.
Other than the quantum dot of the present invention is prepared according to above-mentioned preparation method, the present invention also provides another as above institutes
The preparation method for the quantum dot stated, including step：
Pre-position adds in one or more kinds of cationic presomas in radial directions；It adds in simultaneously under certain condition
One or more kinds of anion presomas, makes cationic presoma react forming quantum dot with anion presoma,
And there is blue shift, red shift and one or more of constant during the reaction in the glow peak wavelength of the quantum dot, so as to
Realize that the alloy compositions in pre-position are distributed.
The difference of such method and former approach is, former is successively to form two layers of compound, Ran Houfa
Raw cation exchange reaction, is distributed so as to fulfill alloy compositions needed for the present invention, and later approach is directly controlled predetermined
The synthesis cationic presoma of alloy compositions and anion presoma needed for being added at position carry out reaction and form quantum dot, from
And realize alloy compositions distribution needed for the present invention.For later approach, reaction principle is the high cationic forerunner of reactivity
Body and anion presoma first react, and react after the low cationic presoma of reactivity and anion presoma,
And during the reaction, cation exchange reaction occurs for different cations, so as to fulfill alloy compositions needed for the present invention point
Cloth.It has been described in detail in preceding method as the type of cationic presoma and anion presoma.As for reaction temperature, reaction
The quantum dot that time and proportioning etc. can synthesize according to needed for specific is different and different, with aforementioned former approach substantially
It is identical, subsequently illustrated with specific embodiment.
The present invention also provides a kind of semiconductor devices, including as above any one of them quantum dot film.
The semiconductor devices is electroluminescent device, photo luminescent devices, solar cell, display device, photoelectricity are visited
Survey any one in device, bioprobe and device for non-linear optical.
By taking electroluminescent device as an example, it is electroluminescent that quantum dot as emitting layer material is formed using quantum dot of the present invention
Luminescent device.This quanta point electroluminescent device can be realized：1) high efficiency charge injection, 2) high brightness, 3) low drive
Dynamic voltage, 4) the excellent devices performance such as high device efficiency.Meanwhile quantum dot of the present invention, have easily controllable and various
The characteristics of performance level structure, can fully meet the level structure of other functional layers in simultaneously coordination device, to realize device entirety
The matching of level structure, so as to help to realize the semiconductor devices of efficient stable.
The photo luminescent devices refer to that relying on external light source is irradiated, and so as to obtain energy, generating excitation causes to send out
The device of light, ultraviolet radioactive, visible ray and infra-red radiation can cause luminescence generated by light, such as phosphorescence and fluorescence.The present invention's receives
Meter Jing Ti can be as the luminescent material of photo luminescent devices.
The solar cell is also referred to as photovoltaic device, and nanocrystal of the invention can be as the light absorption material of solar cell
Material effectively improves the properties of photovoltaic device.
The display device refers to the display panel of backlight module or the application backlight module, and the display panel can be with
It applies in various products, such as display, tablet computer, mobile phone, laptop, flat panel TV, wearable display
Equipment or other include the products of different size display panels.
The photodetector refers to optical signal can be converted to the device of electric signal, and principle is to be caused to be shone by radiation
It penetrates material electric conductivity to change, quantum dot is applied in photodetector, there is following advantage：It is photosensitive to vertical incidence
Sense, photoconductive response degree is high, specific detecivity is high, detection wavelength is continuously adjusted and can low temperature preparation.The photodetection of this structure
Device in the process of running, quantum dot light photosensitive layer（Nanocrystal i.e. using the present invention）The light induced electron generated after absorption photon-
To can be detached under the action of built in field, this causes the structure photodetector to have lower driving electricity in hole
Pressure can just work, and easily controllable under low applying bias even 0 applying bias.
The bioprobe refers to modify certain class material, makes it have the device of mark function, such as to this hair
Bright nanocrystal is coated, and so as to form fluorescence probe, is applied in cell imaging or substance detection field, relative to
Traditional organic fluorescent dye probe, bioprobe prepared by nanocrystal using the present invention have fluorescence intensity height, chemistry
The characteristics of stability is good, anti-light bleaching power is strong, tool has been widely used.
The device for non-linear optical belongs to optical lasers technical field, using wide, such as opens the light for electric light
And Laser Modulation, the tuning of conversion, laser frequency for laser frequency；Carry out optical Information Processing, improve image quality and
Beam quality；As nonlinear etalon and bistable device；The highly excited level and high-resolution spectroscopy and object of research substance
Transfer process and other relaxation processes of matter internal energy and excitation etc..
The present invention is further described below by embodiment (wt% is weight percentage）.
Embodiment 1：The formula and preparation process of quantum dot film are as follows：
The medium for disperseing quantum dot includes a kind of nonpolar liquid.
Following components is added in 500mL single-necked flasks in the case of uniform stirring, order of addition is：100mg's
Quantum dot（Surface ligand is oleic acid）, it is thin to obtain quantum dot for decahydronaphthalene nonpolar liquid, the stirring mixture of 10mL 30 minutes
Film.
Embodiment 2：The formula and preparation process of quantum dot film are as follows：
The medium for disperseing quantum dot includes two kinds of nonpolar liquids.
Following components is added in 500mL single-necked flasks in the case of uniform stirring, order of addition is：100mg's
Quantum dot（Surface ligand is spicy thioalcohol）, the dodecane nonpolar liquid of 2.5 mL, the decahydronaphthalene nonpolar liquid of 2.5 mL,
It stirs mixture 30 minutes, obtains quantum dot film.
Embodiment 3：The formula and preparation process of quantum dot film are as follows：
The medium for disperseing quantum dot includes a kind of polar liquid.
Following components is added in 500mL single-necked flasks in the case of uniform stirring, order of addition is：100mg's
Quantum dot（Surface ligand is PEG）, the ethylene glycol-ether polar liquid of 10 mL, stirring mixture 30 minutes obtains quantum dot
Film.
Embodiment 4：The formula and preparation process of quantum dot film are as follows：
The medium for disperseing quantum dot includes two kinds of polar liquids.
Following components is added in 500mL single-necked flasks in the case of uniform stirring, order of addition is：100mg's
Quantum dot（Surface ligand is PEG）, the ethylene glycol-ether polar liquid of 2.0 mL, the diethylene glycol ether polar liquid of 3.0 mL
Body, stirring mixture 30 minutes, obtains quantum dot film.
Embodiment 5：Preparation based on CdZnSeS/CdZnSeS quantum dots
First the presoma of the presoma of cationic Cd, the presoma of cation Zn, the presoma of anion Se and anion S are noted
Enter into reaction system, form CdyZn1-ySebS1-bLayer（Wherein 0≤y≤1,0≤b≤1）；Continue the forerunner of cationic Cd
Body, the presoma of cation Zn, the presoma of anion Se and the presoma of anion S are injected into reaction system, above-mentioned
CdyZn1-ySebS1-bLayer surface forms CdzZn1-zSecS1-cLayer（Wherein 0≤z≤1, and z is not equal to y, 0≤c≤1）；Certain
Heating temperature and the reaction conditions such as heating time under, ectonexine nanocrystal occurs（I.e. above-mentioned two layers of compound）Middle Cd and Zn
The exchange of ion；The probability migrated due to the limited and more remote migration distance of migration distance of cation with regard to smaller,
It can be in CdyZn1-ySebS1-bLayer and CdzZn1-zSecS1-cThe near interface of layer forms the graded alloy component of Cd contents and Zn contents
Distribution, i.e. CdxZn1-xSeaS1-a, wherein 0≤x≤1,0≤a≤1.
Embodiment 6：Preparation based on CdZnS/CdZnS quantum dots
First the presoma of the presoma of cationic Cd, the presoma of cation Zn and anion S is injected into reaction system,
It is initially formed CdyZn1-yS layers（Wherein 0≤y≤1）；Continue by the presoma of cationic Cd, cation Zn presoma and it is cloudy from
The presoma of sub- S is injected into reaction system, can be in above-mentioned CdyZn1-yS layer surfaces form CdzZn1-zS layers（Wherein 0≤z≤1,
And z is not equal to y）；Under the reaction conditions such as certain heating temperature and heating time, ectonexine nanocrystal occurs（It is i.e. above-mentioned
Two layers of compound）The exchange of middle Cd and Zn ions；Since the limited and more remote migration distance of the migration distance of cation is moved
The probability of shifting, therefore can be in Cd with regard to smalleryZn1-yS layers and CdzZn1-zS layers of near interface forms Cd contents and Zn contents gradually
Become alloy compositions distribution, i.e. CdxZn1-xS, wherein 0≤x≤1.
Embodiment 7：Preparation based on CdZnSe/CdZnSe quantum dots
First the presoma of the presoma of cationic Cd, the presoma of cation Zn and anion Se is injected into reaction system
It is initially formed CdyZn1-ySe layers（Wherein 0≤y≤1）；Continue the presoma and the moon of the presoma of cationic Cd, cation Zn
The presoma of ion Se is injected into reaction system, can be in above-mentioned CdyZn1-ySe layer surfaces form CdzZn1-zSe layers（Wherein 0≤z
≤ 1, and z is not equal to y）；Under the reaction conditions such as certain heating temperature and heating time, Cd in ectonexine nanocrystal occurs
With the exchange of Zn ions；The probability migrated due to the limited and more remote migration distance of migration distance of cation with regard to smaller,
It therefore can be in CdyZn1-ySe layers and CdzZn1-zSe layers of near interface forms the graded alloy component point of Cd contents and Zn contents
Cloth, i.e. CdxZn1-xSe, wherein 0≤x≤1.
Embodiment 8：Preparation based on CdS/ZnS quantum dots
First the presoma of the presoma of cationic Cd and anion S is injected into reaction system, is initially formed CdS layer；Continuing will
The presoma of cationic Zn and the presoma of anion S are injected into reaction system, can form ZnS layers on above-mentioned CdS layer surface；
Under the reaction conditions such as certain heating temperature and heating time, the Zn cations of outer layer can gradual inner layer migration, and and Cd
Cation exchange reaction occurs for cation, i.e. Cd ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to cation
The probability that migrates of the limited and more remote migration distance of migration distance with regard to smaller, therefore can be in CdS layer and ZnS layers of interface
Be formed about Cd contents it is radially outward gradually decrease, the radially outward graded alloy component gradually increased point of Zn contents
Cloth, i.e. CdxZn1-xS, wherein 0≤x≤1 and x is from inside to outside（Radial direction）It is 0 from 1 monotone decreasing.
Embodiment 9：Preparation based on CdSe/ZnSe quantum dots
First the presoma of the presoma of cationic Cd and anion Se is injected into reaction system and is initially formed CdSe layers；Continuing will
The presoma of cationic Zn and the presoma of anion Se are injected into reaction system, can form ZnSe in above-mentioned CdSe layer surfaces
Layer；Under the reaction conditions such as certain heating temperature and heating time, the Zn cations of outer layer can gradual inner layer migration, and with
Cation exchange reaction occurs for Cd cations, i.e. Cd ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to sun from
The probability that the limited and more remote migration distance of migration distance of son migrates, therefore can be in CdSe layers and ZnSe layer with regard to smaller
Near interface formed Cd contents it is radially outward gradually decrease, the radially outward graded alloy group gradually increased of Zn contents
Distribution, i.e. CdxZn1-xSe, wherein 0≤x≤1 and x is from inside to outside（Radial direction）It is 0 from 1 monotone decreasing.
Embodiment 10：Preparation based on CdSeS/ZnSeS quantum dots
First the presoma of the presoma of cationic Cd, the presoma of anion Se and anion S is injected into reaction system
It is initially formed CdSebS1-bLayer（Wherein 0≤b≤1）；Continue by the presoma of cationic Zn, anion Se presoma and it is cloudy from
The presoma of sub- S is injected into reaction system, can be in above-mentioned CdSebS1-bLayer surface forms ZnSecS1-cLayer（Wherein 0≤c≤1）；
Under the reaction conditions such as certain heating temperature and heating time, the Zn cations of outer layer can gradual inner layer migration, and and Cd
Cation exchange reaction occurs for cation, i.e. Cd ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to cation
The probability that migrates of the limited and more remote migration distance of migration distance with regard to smaller, therefore can be in CdSebS1-bLayer with
ZnSecS1-cThe near interface of layer formed Cd contents it is radially outward gradually decrease, Zn contents are radially outward gradually increases
Graded alloy component distribution, i.e. CdxZn1-xSeaS1-a, wherein 0≤x≤1 and x is from inside to outside（Radial direction）From 1 monotone decreasing
It is 0,0≤a≤1.
Embodiment 11：Preparation based on ZnS/CdS quantum dots
First the presoma of the presoma of cationic Zn and anion S is injected into reaction system and is initially formed ZnS layers；Continuing will be positive
The presoma of ion Cd and the presoma of anion S are injected into reaction system, can form CdS layer in above-mentioned ZnS layer surfaces；
Under the reaction conditions such as certain heating temperature and heating time, the Cd cations of outer layer can gradual inner layer migration, and with Zn sun
Cation exchange reaction occurs for ion, i.e. Zn ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to cation
The probability that the limited and more remote migration distance of migration distance migrates, therefore can be attached with the interface of CdS layer at ZnS layers with regard to smaller
It is near formed Zn contents it is radially outward gradually decrease, the radially outward graded alloy component point gradually increased of Cd contents
Cloth, i.e. CdxZn1-xS, wherein 0≤x≤1 and x is from inside to outside（Radial direction）It is 1 from 0 monotonic increase.
Embodiment 12：Preparation based on ZnSe/CdSe quantum dots
First the presoma of the presoma of cationic Zn and anion Se is injected into reaction system and is initially formed ZnSe layer；Continuing will
The presoma of cationic Cd and the presoma of anion Se are injected into reaction system, can form CdSe on above-mentioned ZnSe layer surface
Layer；Under the reaction conditions such as certain heating temperature and heating time, the Cd cations of outer layer can gradual inner layer migration, and with
Cation exchange reaction occurs for Zn cations, i.e. Zn ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to sun from
The probability that the limited and more remote migration distance of migration distance of son migrates, therefore can be in ZnSe layer and CdSe layers with regard to smaller
Near interface formed Zn contents it is radially outward gradually decrease, the radially outward graded alloy group gradually increased of Cd contents
Distribution, i.e. CdxZn1-xSe, wherein 0≤x≤1 and x is from inside to outside（Radial direction）It is 1 from 0 monotonic increase.
Embodiment 13：Preparation based on ZnSeS/CdSeS quantum dots
First the presoma of the presoma of cationic Zn, the presoma of anion Se and anion S is injected into reaction system
It is initially formed ZnSebS1-bLayer（Wherein 0≤b≤1）；Continue by the presoma of cationic Cd, anion Se presoma and it is cloudy from
The presoma of sub- S is injected into reaction system, can form CdSe in above-mentioned ZnSebS1-b layer surfacescS1-cLayer（Wherein 0≤c≤
1）；Under the reaction conditions such as certain heating temperature and heating time, the Cd cations of outer layer can gradual inner layer migration, and with
Cation exchange reaction occurs for Zn cations, i.e. Zn ions outer layers migrate, and the exchange of Cd and Zn ions has occurred；Due to sun from
The probability that the limited and more remote migration distance of migration distance of son migrates, therefore can be in ZnSe with regard to smallerbS1-bLayer with
CdSecS1-cThe near interface of layer formed Zn contents it is radially outward gradually decrease, Cd contents are radially outward gradually increases
Graded alloy component distribution, i.e. CdxZn1-xSeaS1-a, wherein 0≤x≤1 and x are from inside to outside 1 from 0 monotonic increase, 0≤a≤
1。
Embodiment 14：The preparation of blue quantum dot with concrete structure 1
It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)2], 8 mL
Oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C
60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted
Enter into reaction system, after reacting 10 min, by trioctylphosphine sulfide presoma and cadmium oleate presoma respectively with 3 mL/h and
The rate of 10 mL/h is added dropwise in reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and nothing
Product is dissolved, precipitated by water methanol repeatedly, is then centrifuged for purifying, and obtains the blue quantum dot with concrete structure 1（CdxZn1- xS）.
Embodiment 15：The preparation of green quantum dot with concrete structure 1
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.4 mmol cadmium oxides（CdO）, 8 mmol zinc acetates [Zn (acet)2], 10
ML oleic acid（Oleic acid）It is placed in 100 mL three-necked flasks, 60 min of vacuum outgas is carried out at 80 DEG C.Then it is cut
It changes under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in the three of 4 mL
Octyl group phosphine（Trio ctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 2 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three
Octyl group phosphine presoma is rapidly injected in reaction system, first generates CdxZn1-xSeyS1-y, after reacting 10 min, by the vulcanization of 2mL
Tri octyl phosphine presoma is added dropwise to the rate of 8 mL/h in reaction system, until presoma has injected.After reaction,
After reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains having tool
The green quantum dot of body structure 1（CdxZn1-xSeyS1-y/CdzZn1-zS）, prepared green quantum is represented before "/" herein
The composition of the inside of point, "/" then represents the composition outside prepared green quantum dot below, and "/" representative is not
It is apparent boundary, but the structure of gradual change from inside to outside, this quantum dot representation method meaning subsequently occurred are identical.
Embodiment 16：The preparation of red quantum dot with concrete structure 1
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.8 mmol cadmium oxides（CdO）, 12 mmol zinc acetates [Zn (acet)2],
14 mL oleic acid（Oleic acid）It is placed in 100 mL three-necked flasks, 60 min of vacuum outgas is carried out at 80 DEG C.Then by it
It switches under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4 mL（Trioctylphosphine）In, it obtains
To selenizing tri octyl phosphine presoma.
By 0.2 mmol selenium powders（Selenium powder）, 0.6 mmol sulphur powders（Sulfur powder）It is dissolved in 2 mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast
Speed is injected into reaction system, first generates CdxZn1-xSe, it is after reacting 10 min, selenizing tri octyl phosphine-vulcanization three of 2mL is pungent
Base phosphine presoma is added dropwise to the rate of 4 mL/h in reaction system.After reaction, after reaction solution is cooled to room temperature,
Product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains the red fluorescence quantum with concrete structure 1
Point（CdxZn1-xSeyS1-y/CdzZn1-zS）.
Embodiment 17：The influence that cadmium oleate charge velocity synthesizes the blue quantum dot with concrete structure 1
On the basis of embodiment 14, the graded of quantum dot component can be regulated and controled by the charge velocity for adjusting cadmium oleate
Slope, so as to influence its level structure, the final regulation and control realized to quantum dot light emitting wavelength.
It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)2],
8 mL oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, at 80 DEG C
Carry out 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted
Enter into reaction system, first generate CdxZn1-xS, react 10 min after, by trioctylphosphine sulfide presoma with 3 mL/h rates by
It is added dropwise in reaction system, while cadmium oleate presoma is added dropwise to different charge velocities in reaction system.Instead
After answering, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains
To the blue quantum dot with level structure 1（CdxZn1-xS/CdyZn1-yS）.
Based on identical core（Alloy quantum dot glow peak 447nm）And under the charge velocity of different cadmium oleate presomas, amount
Son point emission wavelength regulation and control are listed as follows：
Embodiment 18：The influence that cadmium oleate injection rate synthesizes the blue quantum dot with concrete structure 1
On the basis of embodiment 14 and embodiment 17, by adjusting the injection rate of cadmium oleate presoma, quantum dot can be regulated and controled
Ingredient graded section, so as to influence the variation of its level structure, the final tune realized to quantum dot light emitting wavelength
Control.Based on identical core（Alloy quantum dot glow peak 447nm）And the injection rate of different cadmium oleate presomas（Identical charge velocity
Lower 1 mmol/h）Under rate, quantum dot light emitting wavelength tuning control is listed as follows.
Embodiment 19：The preparation of blue quantum dot with concrete structure 2
It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)2], 8 mL
Oleic acid（Oleic acid）With 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C
60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted
Enter into reaction system, first generate CdxZn1-xTemperature of reaction system after reacting 10 min, is down to 280 DEG C, then by 2mL by S
Trioctylphosphine sulfide presoma and 6mL cadmium oleates presoma reaction is injected into the rate of 3 mL/h and 10mL/h simultaneously respectively
In system.After injecting 40 min, temperature of reaction system is warming up to 310 DEG C, by 1mL trioctylphosphine sulfides presoma with 3 mL/h
Rate be injected into reaction system, after reaction, after reaction solution is cooled to room temperature, with toluene and absolute methanol by product
It dissolves, precipitate repeatedly, centrifugation purification obtains the blue quantum dot of concrete structure 2.
Embodiment 20：The preparation of green quantum dot with concrete structure 2
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.4 mmol cadmium oxides（CdO）, 8 mmol zinc acetates [Zn (acet) 2], 10
ML oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）Be placed in 100 mL three-necked flasks, at 80 DEG C into
60 min of row vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in the three of 4mL
Octyl group phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
By 2mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 2mL（Trioctylphosphine）In, it obtains
To trioctylphosphine sulfide presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three
Octyl group phosphine presoma is rapidly injected in reaction system, first generates CdxZn1-xSeyS1-y, after reacting 10 min, by reaction system temperature
Degree is down to 280 DEG C, then by the trioctylphosphine sulfide presoma of 1.2mL and 6mL cadmium oleates presoma respectively with 2 mL/h and
The rate of 10mL/h is injected into reaction system, until presoma has injected.Temperature of reaction system is warming up to 310 DEG C, by 0.8
ML trioctylphosphine sulfides presoma is injected into the rate of 2 mL/h in reaction system.After reaction, treat that reaction solution is cooled to
After room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains the amount of green color with concrete structure 2
Sub- point.
Embodiment 21：The preparation of red quantum dot with concrete structure 2
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.8 mmol cadmium oxides（CdO）, 12 mmol zinc acetates [Zn (acet)2],
14 mL oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, at 80 DEG C
Carry out 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4mL（Trioctylphosphine）In, it obtains
To selenizing tri octyl phosphine presoma.
By 0.2 mmol selenium powders（Selenium powder）, 0.6 mmol sulphur powders（Sulfur powder）It is dissolved in 2mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
By 0.3 mmol cadmium oxides（CdO）, 0.3mL oleic acid（Oleic acid）With 2.7 mL octadecylenes（1-
Octadecene）It is placed in 50 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast
Speed is injected into reaction system, first generates CdxZn1-xTemperature of reaction system after reacting 10 min, is down to 280 DEG C, then by Se
By 1mL selenizings tri octyl phosphine-trioctylphosphine sulfide presoma and 3mL cadmium oleates presoma respectively with the speed of 2 mL/h and 6 mL/h
Rate is injected into reaction system.Temperature of reaction system is warming up to 310 DEG C, before 1mL selenizings tri octyl phosphine-trioctylphosphine sulfide
Body is driven to be injected into reaction system with the rate of 4 mL/h.After reaction, after reaction solution is cooled to room temperature, with toluene and nothing
Product is dissolved, precipitated by water methanol repeatedly, and centrifugation purification obtains the red quantum dot with concrete structure 2.
Embodiment 22：The preparation of blue quantum dot with concrete structure 3
It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)2], 8 mL
Oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C
60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.2 mmol selenium powders（Selenium powder）It is dissolved in the tri octyl phosphine of 1 mL
（Trioctylphosphine）In, obtain selenizing tri octyl phosphine presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted
Enter into reaction system, first generate CdxZn1-xS, after reacting 10 min, by cadmium oleate presoma and trioctylphosphine sulfide presoma
It is continuously injected into 20 min to reaction system with the rate of 0.6 mmol/h, 4 mmol/h respectively.Then by cadmium oleate presoma,
Trioctylphosphine sulfide presoma and selenizing tri octyl phosphine presoma are respectively with 0.4 mmol/h, 0.6 mmol/h and 0.2 mmol/h
Rate be continuously injected into 1 h to reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and without water beetle
Product is dissolved, precipitated by alcohol repeatedly, and centrifugation purification is obtained with Quantum Well（Concrete structure 3）Blue quantum dot
(CdZnS/CdZnS/CdZnSeS3)。
Embodiment 23：The preparation of green quantum dot with concrete structure 3
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.4 mmol cadmium oxides（CdO）, 6 mmol zinc acetates [Zn (acet)2], 10
ML oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）Be placed in 100 mL three-necked flasks, at 80 DEG C into
60 min of row vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 0.4 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in 4 mL's
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 1.
By 0.1 mmol selenium powders（Selenium powder）, 0.3 mmol sulphur powders（Sulfur powder）It is dissolved in 2 mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 2.
By 0.8 mmol sulphur powders（Sulfur powder）, 0.8 mmol selenium powders（Selenium powder）It is dissolved in 3 mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 3.
By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three
Octyl group phosphine presoma 1 is rapidly injected in reaction system, first generates CdxZn1-xSeyS1-y, after reacting 5 min, by the selenizing of 2mL
Tri octyl phosphine-trioctylphosphine sulfide presoma 2 is added dropwise to the rate of 6 mL/h in reaction system.Then, by the selenium of 3mL
Change the cadmium oleate presoma of tri octyl phosphine-trioctylphosphine sulfide presoma 3 and 6mL respectively with 3 mL/h and 6 mL/h rates after
It is continuous to be added dropwise in reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and absolute methanol by product
It dissolves, precipitate repeatedly, centrifugation purification obtains the green quantum dot (CdZn with concrete structure 33SeS3/Zn4SeS3/
Cd3Zn5Se4S4)。
Embodiment 24：The preparation of red quantum dot with concrete structure 3
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.8 mmol cadmium oxides（CdO）, 12 mmol zinc acetates [Zn (acet)2],
14 mL oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, at 80 DEG C
Carry out 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4 mL（Trioctylphosphine）In, it obtains
To selenizing tri octyl phosphine presoma.
By 0.2 mmol selenium powders（Selenium powder）, 0.6 mmol sulphur powders（Sulfur powder）It is dissolved in 2 mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
By 0.9 mmol cadmium oxides（CdO）, 0.9 mL oleic acid（Oleic acid）With 8.1 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast
Speed is injected into reaction system, first generates CdxZn1-xSe, it is after reacting 10 min, selenizing tri octyl phosphine-vulcanization three of 2 mL is pungent
Base phosphine presoma is added dropwise to the rate of 2 mL/h in reaction system.When being injected into 30 min, before the cadmium oleate of 3 mL
Body is driven to be added dropwise in reaction system with 6 mL/h rates simultaneously.After reaction, after reaction solution is cooled to room temperature, first is used
Product is dissolved, precipitated by benzene and absolute methanol repeatedly, and centrifugation purification obtains the red quantum dot with concrete structure 3
（CdxZn1-xSe/ZnSeyS1-y/CdzZn1-zSeS）.
Embodiment 25：The preparation of blue quantum dot with concrete structure 4
It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)2], 8 mL
Oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C
60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.2mmol selenium powders（Selenium powder）It is dissolved in the tri octyl phosphine of 1mL（Trioctylphosphine）
In, obtain selenizing tri octyl phosphine presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted
Enter into reaction system, first generate CdxZn1-xS, after reacting 10 min, by cadmium oleate presoma and selenizing tri octyl phosphine presoma
It is continuously injected into 20 min to reaction system with the rate of 0.6 mmol/h, 0.6 mmol/h respectively.Then by cadmium oleate forerunner
Body and trioctylphosphine sulfide presoma are continuously injected into the rate of 0.4 mmol/h and 6 mmol/h in 1h to reaction system respectively.
After reaction, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification,
It obtains with Quantum Well（Concrete structure 4）Blue quantum dot（CdZnS/CdZnSe/CdZnS）.
Embodiment 26：The preparation of green quantum dot with concrete structure 4
It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)2], 8 mL
Oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C
60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.4 mmol selenium powders（Selenium powder）It is dissolved in the tri octyl phosphine of 2 mL
（Trioctylphosphine）In, obtain selenizing tri octyl phosphine presoma.
By 0.8 mmol cadmium oxides（CdO）, 1.2 mL oleic acid（Oleic acid）With 4.8 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted
Enter into reaction system, first generate CdxZn1-xS, after reacting 10 min, by cadmium oleate presoma and selenizing tri octyl phosphine presoma
It is continuously injected into 40 min to reaction system with the rate of 0.6 mmol/h, 0.6 mmol/h respectively.Then by cadmium oleate forerunner
Body and trioctylphosphine sulfide presoma are continuously injected into 1 h to reaction system with the rate of 0.4 mmol/h and 6 mmol/h respectively
In.After reaction, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation carries
It is pure, it obtains with Quantum Well（Concrete structure 4）Green quantum dot（CdZnS/CdZnSe/CdZnS）.
Embodiment 27：The preparation of red quantum dot with concrete structure 4
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.8 mmol cadmium oxides（CdO）, 12 mmol zinc acetates [Zn (acet)2],
14 mL oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, at 80 DEG C
Carry out 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 1.5 mmol selenium powders（Selenium powder）, 1.75 mmol sulphur powders（Sulfur powder）It is dissolved in 3mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 1.
By 1 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 2mL（Trioctylphosphine）In, it obtains
To selenizing tri octyl phosphine presoma.
By 0.2 mmol selenium powders（Selenium powder）, 0.8 mmol sulphur powders（Sulfur powder）It is dissolved in 2mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 2.
By 3 mmol cadmium oxides（CdO）, 3mL oleic acid（Oleic acid）With 6 mL octadecylenes（1-Octadecene）It is placed in
In 100 mL three-necked flasks, it is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent cadmium oleate presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three
Octyl group phosphine presoma 1 is injected into reaction system, first generates CdxZn1-xSe, after reacting 10 min, by the selenizing trioctylphosphine of 2 mL
The cadmium oleate presoma of phosphine presoma and 3mL are added dropwise to the rate of 4 mL/h and 6 mL/h in reaction system respectively.Note
When entering to 30 min, by the cadmium oleate presoma of selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 2 of 2mL and 3mL respectively with
2 mL/h and 3 mL/h rates are added dropwise in reaction system.After reaction, after reaction solution is cooled to room temperature, toluene is used
Product is dissolved repeatedly with absolute methanol, is precipitated, centrifugation purification obtains the red quantum dot of concrete structure 4（CdxZn1-xSe/
CdZnSe/CdzZn1-zSeS）.
Embodiment 28：The preparation of blue quantum dot with concrete structure 5
It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)2], 8 mL
Oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C
60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 1 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted
Enter into reaction system, first generate CdxZn1-xS, after reacting 10 min, by 3 mL trioctylphosphine sulfides presomas with 3 mL/h's
Rate is continuously injected into 1h to reaction system, when trioctylphosphine sulfide presoma injects 20 min, by 2 mL cadmium oleate forerunners
Body is injected into 6 mL/h in reaction system, when trioctylphosphine sulfide presoma injects 40 min, by 4 mL cadmium oleate forerunners
Body is injected into 12 mL/h in reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and absolute methanol
Product is dissolved repeatedly, is precipitated, centrifugation purification is obtained with Quantum Well（Concrete structure 5）Blue quantum dot
（CdZnS/ZnS/CdZnS）.
Embodiment 29：The preparation of green quantum dot with concrete structure 5
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.4 mmol cadmium oxides（CdO）, 6 mmol zinc acetates [Zn (acet)2], 10
ML oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）Be placed in 100 mL three-necked flasks, at 80 DEG C into
60 min of row vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 0.4 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in 4mL's
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma 1.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three
Octyl group phosphine presoma is rapidly injected in reaction system, first generates CdxZn1-xSeyS1-y, after reacting 10 min, 3 mL are vulcanized three
Octyl group phosphine presoma is continuously injected into the rate of 3 mL/h in 1h to reaction system, injects 20 in trioctylphosphine sulfide presoma
During min, 2 mL cadmium oleates presomas are injected into 6 mL/h in reaction system, inject 40 in trioctylphosphine sulfide presoma
During min, 4 mL cadmium oleates presomas are injected into 12 mL/h in reaction system.After reaction, treat that reaction solution is cooled to room
Product with toluene and absolute methanol is dissolved, precipitated by Wen Hou repeatedly, and centrifugation purification is obtained with Quantum Well（Specifically
Structure 5）Green quantum dot（CdZnSeS/ZnS/CdZnS）.
Embodiment 30：The preparation of red quantum dot with concrete structure 5
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.8 mmol cadmium oxides（CdO）, 12 mmol zinc acetates [Zn (acet)2],
14 mL oleic acid（Oleic acid）With 20 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, at 80 DEG C
Carry out 60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4mL（Trioctylphosphine）In, it obtains
To selenizing tri octyl phosphine presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast
Speed is injected into reaction system, first generates CdxZn1-xSe, after reacting 10 min, by trioctylphosphine sulfide presoma with 6 mmol/
The rate of h is continuously injected into 1h to reaction system, when S-TOP injects 20 min, by 0.2 mmol cadmium oleate presomas with 0.6
Mmol/h is injected into reaction system, when S-TOP injects 40 min, by 0.4 mmol cadmium oleates presoma with 1.2 mmol/h
It is injected into reaction system.After reaction, it is with toluene and absolute methanol that product is repeatedly molten after reaction solution is cooled to room temperature
Solution, precipitation, centrifugation purification, obtain with Quantum Well（Concrete structure 5）Red quantum dot（CdZnSe/ZnS/
CdZnS）.
Embodiment 31：The preparation of blue quantum dot with concrete structure 6
It is prepared by cadmium oleate and oleic acid zinc precursor：By 1 mmol cadmium oxides（CdO）, 9 mmol zinc acetates [Zn (acet)2], 8 mL
Oleic acid（Oleic acid）And 15 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is carried out at 80 DEG C
60 min of vacuum outgas.Then it switches it under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With 5.4 mL octadecylenes（1-
Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 min for 250 DEG C under nitrogen atmosphere, obtains transparent oil
Sour cadmium presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, sulphur octadecylene presoma is quickly noted
Enter into reaction system, first generate CdxZn1-xS, after reacting 10 min, by trioctylphosphine sulfide presoma and cadmium oleate presoma
It is added dropwise in reaction system with the rate of 6mmol/h and 0.6 mmol/h respectively.After 30 min, temperature of reaction system is dropped
To 280 DEG C, by remaining trioctylphosphine sulfide presoma and cadmium oleate presoma respectively with the speed of 6mmol/h and 0.6 mmol/h
Rate is added dropwise in reaction system.After reaction, after reaction solution is cooled to room temperature, with toluene and absolute methanol by product
It dissolves, precipitate repeatedly, centrifugation purification obtains the blue quantum dot with concrete structure 6（CdxZn1-xS）.
Embodiment 32：The preparation of green quantum dot with concrete structure 6
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.4 mmol cadmium oxides（CdO）, 8 mmol zinc acetates [Zn (acet)2], 10
ML oleic acid（Oleic acid）It is placed in 100 mL three-necked flasks, 60 min of vacuum outgas is carried out at 80 DEG C.Then it is cut
It changes under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol selenium powders（Selenium powder）, 4 mmol sulphur powders（Sulfur powder）It is dissolved in the three of 4mL
Octyl group phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
By 2mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 2mL（Trioctylphosphine）In, it obtains
To trioctylphosphine sulfide presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, by selenizing tri octyl phosphine-vulcanization three
Octyl group phosphine presoma is rapidly injected in reaction system, first generates CdxZn1-xSeyS1-y, after reacting 10 min, by reaction system
Temperature is down to 280 DEG C, and trioctylphosphine sulfide presoma is added dropwise to the rate of 4 mL/h in reaction system.Reaction terminates
Afterwards, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification is had
The green quantum dot of concrete structure 6（CdxZn1-xSeyS1-y/ZnS）.
Embodiment 33：The preparation of red quantum dot with concrete structure 6
It is prepared by cadmium oleate and oleic acid zinc precursor：By 0.8 mmol cadmium oxides（CdO）, 12 mmol zinc acetates [Zn (acet)2],
14 mL oleic acid（Oleic acid）It is placed in 100 mL three-necked flasks, 60 min of vacuum outgas is carried out at 80 DEG C.Then by it
It switches under nitrogen atmosphere, and in preservation at this temperature in case for use.
By 2 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4mL（Trioctylphosphine）In, it obtains
To selenizing tri octyl phosphine presoma.
By 0.2 mmol selenium powders（Selenium powder）, 0.6 mmol sulphur powders（Sulfur powder）It is dissolved in 2mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
Under nitrogen atmosphere, cadmium oleate and oleic acid zinc precursor are warming up to 310 DEG C, selenizing tri octyl phosphine presoma is fast
Speed is injected into reaction system, first generates CdxZn1-xTemperature of reaction system after reacting 10 min, is down to 280 DEG C, by selenium by Se
Change tri octyl phosphine-trioctylphosphine sulfide presoma to be added dropwise in reaction system with the rate of 4 mL/h.After reaction, it treats
After reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains having specific
The red quantum dot of structure 6（CdxZn1-xSe/ZnSeS）.
Embodiment 34：The preparation of green quantum dot with concrete structure 7
It is prepared by the first presoma of cadmium oleate：By 1 mmol cadmium oxides（CdO）, 1 mL oleic acid（Oleic acid）With 5 mL octadecylenes
（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.Then it switches it to
Into under nitrogen atmosphere, and in preservation at this temperature in case for use.
It is prepared by the second presoma of cadmium oleate：By 0.6 mmol cadmium oxides（CdO）, 0.6 mL oleic acid（Oleic acid）With
5.4 mL octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, is heated to reflux 120 for 250 DEG C under nitrogen atmosphere
Mins obtains transparent the second presoma of cadmium oleate.
It is prepared by oleic acid zinc precursor：By 9 mmol zinc acetates [Zn (acet)2], 7 mL oleic acid（Oleic acid）And 10
ML octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.Then
It switches it under nitrogen atmosphere, and is heated to reflux preserving in case for use in lower 250 DEG C of nitrogen atmosphere.
By 2 mmol sulphur powders（Sulfur powder）It is dissolved in the octadecylene of 3 mL（1-Octadecene）In, obtain sulphur
Octadecylene presoma.
By 6 mmol sulphur powders（Sulfur powder）It is dissolved in the tri octyl phosphine of 3 mL（Trioctylphosphine）In,
Obtain trioctylphosphine sulfide presoma.
Under nitrogen atmosphere, the first presoma of cadmium oleate is warming up to 310 DEG C, sulphur octadecylene presoma is rapidly injected
Into reaction system, CdS is quickly generated, after reacting 10 mins, oleic acid zinc precursor is all injected into reaction system, then by 3
The trioctylphosphine sulfide presoma of mL and 6 the second presomas of mL cadmium oleates are noted simultaneously with the rate of 3 mL/h and 10 mL/h respectively
Enter into reaction system.
After reaction, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated,
Centrifugation purification, obtains the blue quantum dot with Quantum Well.
Embodiment 35：The preparation of green quantum dot with concrete structure 7
It is prepared by cadmium oleate presoma：By 0.4 mmol cadmium oxides（CdO）, 1 mL oleic acid（Oleic acid）With 5 mL octadecylenes
（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.Then by it in nitrogen
Atmosphere is enclosed lower 250 DEG C and is heated to reflux, and in preservation at this temperature in case for use.
By 0.4 mmol selenium powders（Selenium powder）, it is dissolved in the tri octyl phosphine of 4 mL
（Trioctylphosphine）In, obtain selenizing tri octyl phosphine.
It is prepared by oleic acid zinc precursor：By 8 mmol zinc acetates [Zn (acet)2], 9 mL oleic acid（Oleic acid）With 15
ML octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.In nitrogen
Atmosphere encloses lower 250 DEG C and is heated to reflux 120 mins, obtains transparent oleic acid zinc precursor.
By 2 mmol sulphur powders（Sulfur powder）With 1.6 mmol selenium powders（Selenium powder）It is dissolved in 2 mL
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
Under nitrogen atmosphere, cadmium oleate presoma is warming up to 310 DEG C, selenizing tri octyl phosphine presoma is rapidly injected
Into reaction system, CdSe is quickly generated, after reacting 5 mins, oleic acid zinc precursor is all injected into reaction system, by 2
Selenizing tri octyl phosphine-trioctylphosphine sulfide presoma of mL is added dropwise to the rate of 2 mL/h in reaction system, until before
Body is driven to have injected.After reaction, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is sunk
It forms sediment, centrifugation purification obtains the green fluorescence quantum dot with Quantum Well.
Embodiment 36：The preparation of red quantum dot with concrete structure 7
It is prepared by cadmium oleate presoma：By 0.8 mmol cadmium oxides（CdO）, 4 mL oleic acid（Oleic acid）With 10 mL octadecylenes
（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.Then by it in nitrogen
Atmosphere is enclosed lower 250 DEG C and is heated to reflux, and in preservation at this temperature in case for use.
It is prepared by oleic acid zinc precursor：12 mmol zinc acetates [Zn (acet)2], 10 mL oleic acid（Oleic acid）With 10
ML octadecylenes（1-Octadecene）It is placed in 100 mL three-necked flasks, 60 mins of vacuum outgas is carried out at 80 DEG C.
By 0.8 mmol selenium powders（Selenium powder）In the tri octyl phosphine of 4 mL（Trioctylphosphine）In,
Obtain selenizing tri octyl phosphine presoma.
By 1 mmol selenium powders（Selenium powder）, 0.6 mmol sulphur powders（Sulfur powder）It is dissolved in 2 mL's
Tri octyl phosphine（Trioctylphosphine）In, obtain selenizing tri octyl phosphine-trioctylphosphine sulfide presoma.
Under nitrogen atmosphere, cadmium oleate presoma is warming up to 310 DEG C, selenizing tri octyl phosphine presoma is rapidly injected
Into reaction system, CdSe is quickly generated, after reacting 10 mins, oleic acid zinc precursor is all injected into reaction system, it will
Selenizing tri octyl phosphine-trioctylphosphine sulfide presoma of 2 mL is added dropwise to the rate of 4 mL/h in reaction system.Reaction
After, after reaction solution is cooled to room temperature, product is dissolved repeatedly with toluene and absolute methanol, is precipitated, centrifugation purification obtains
Red fluorescence quantum dot with Quantum Well.
Embodiment 37
The present embodiment light emitting diode with quantum dots, as shown in figure 8, including successively from bottom to top：ITO substrates 11, hearth electrode 12,
PEDOT：PSS hole injection layers 13, poly-TPD hole transmission layers 14, quantum dot light emitting layer 15, ZnO electron transfer layers 16 and Al
Top electrode 17.
The preparation process of above-mentioned light emitting diode with quantum dots is as follows：
Hearth electrode 12,30 nm PEDOT are sequentially prepared on ITO substrates 11：13 and 30 nm poly-TPD of PSS hole injection layers
After hole transmission layer 14, one layer of quantum dot light emitting layer 15 is prepared on poly-TPD hole transmission layers 14, thickness is 20 nm, with
Prepare 40 nm ZnO electron transfer layers 16 and 100 nm Al top electrodes 17 on quantum dot light emitting layer 15 again afterwards.The quantum dot
The quanta point material of luminescent layer 15 is quantum dot film as described embodiments.
Embodiment 38
Light emitting diode with quantum dots in the present embodiment, as shown in figure 9, including successively from bottom to top：ITO substrates 21, hearth electrode 22,
PEDOT：PSS hole injection layers 23, Poly (9-vinylcarbazole) (PVK) hole transmission layer 24, quantum dot light emitting layer
25th, ZnO electron transfer layers 26 and Al top electrodes 27.
The preparation process of above-mentioned light emitting diode with quantum dots is as follows：
Hearth electrode 22,30 nm PEDOT are sequentially prepared on ITO substrates 21：23 and 30 nm PVK holes of PSS hole injection layers
After transport layer 24, one layer of quantum dot light emitting layer 25 is prepared on PVK hole transmission layers 24, thickness is 20 nm, then again in quantum
40 nm ZnO electron transfer layers 26 and 100 nm Al top electrodes 27 are prepared on point luminescent layer 25.The quantum dot light emitting layer 25
Quanta point material is quantum dot film as described embodiments.
Embodiment 39
The present embodiment light emitting diode with quantum dots as shown in Figure 10, includes successively from bottom to top：ITO substrates 31, hearth electrode 32,
PEDOT：PSS hole injection layers 33, poly-TPD hole transmission layers 34, quantum dot light emitting layer 35, TPBi electron transfer layers 36 and
Al top electrodes 37.
The preparation process of above-mentioned light emitting diode with quantum dots is as follows：
Hearth electrode 32,30 nm PEDOT are sequentially prepared on ITO substrates 31：33 and 30 nm poly-TPD of PSS hole injection layers
After hole transmission layer 34, one layer of quantum dot light emitting layer 35 is prepared on poly-TPD hole transmission layers 34, thickness is 20 nm, with
30 nm TPBi electron transfer layers 36 are prepared by vacuum deposition method on quantum dot light emitting layer 35 again afterwards and 100 nm Al are pushed up
Electrode 37.The quanta point material of the quantum dot light emitting layer 35 is quantum dot film as described embodiments.
Embodiment 40
The present embodiment light emitting diode with quantum dots as shown in figure 11, includes successively from bottom to top：ITO substrates 41, hearth electrode 42,
ZnO electron transfer layers 43, quantum dot light emitting layer 44, NPB hole transmission layers 45, MoO3Hole injection layer 46 and Al top electrodes 47.
The preparation process of above-mentioned light emitting diode with quantum dots is as follows：
42,40 nm ZnO electron transfer layers 43 of hearth electrode are sequentially prepared on ITO substrates 41, on ZnO electron transfer layers 43
One layer of quantum dot light emitting layer 44 is prepared, thickness is 20 nm, then prepares 30 nm NPB holes by vacuum deposition method again
45,5 nm MoO of transport layer346 and 100 nm Al top electrodes 47 of hole injection layer.The quantum dot of the quantum dot light emitting layer 44
Material is quantum dot film as described embodiments.
Embodiment 41
The present embodiment light emitting diode with quantum dots as shown in figure 12, includes successively from bottom to top：Glass substrate 51, Al electrodes 52,
PEDOT：PSS hole injection layers 53, poly-TPD hole transmission layers 54, quantum dot light emitting layer 55, ZnO electron transfer layers 56 and
ITO top electrodes 57.
The preparation process of above-mentioned light emitting diode with quantum dots is as follows：
100 nm Al electrodes 52 are prepared by vacuum deposition method in glass substrate 51, are then sequentially prepared 30 nm
PEDOT：After 53 and 30 nm poly-TPD hole transmission layers 54 of PSS hole injection layers, on poly-TPD hole transmission layers 54
One layer of quantum dot light emitting layer 55 is prepared, thickness is 20 nm, then prepares 40 nm ZnO electronics on quantum dot light emitting layer 55 again
Transport layer 56 prepares 120 nm ITO as top electrode 57 finally by sputtering method.The quantum of the quantum dot light emitting layer 55
Point material is quantum dot film as described embodiments.
Embodiment 42
The present embodiment light emitting diode with quantum dots as shown in figure 13, includes successively from bottom to top：Glass substrate 61, Al electrodes 62,
ZnO electron transfer layers 63, quantum dot light emitting layer 64, NPB hole transmission layers 65, MoO3Hole injection layer 66 and ITO top electrodes 67.
The preparation process of above-mentioned light emitting diode with quantum dots is as follows：
100 nm Al electrodes 62 are prepared by vacuum deposition method in glass substrate 61, are then sequentially prepared 40 nm ZnO
63,20 nm quantum dot light emitting layers 64 of electron transfer layer then prepare 30 nm NPB hole transports by vacuum deposition method again
65,5 nm MoO of layer3Hole injection layer 66 prepares 120 nm ITO as top electrode 67 finally by sputtering method.The amount
The quanta point material of son point luminescent layer is quantum dot film as described embodiments.
It should be understood that the application of the present invention is not limited to the above, it for those of ordinary skills, can
To be improved or converted according to the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect range.
Claims (24)
1. a kind of quantum dot film, which is characterized in that by weight percentage, including following component：
Quantum dot：0.01-40.0%；The quantum dot includes at least one quantum-dot structure arranged successively in radial directions
Unit, graded alloy component structure or in the radial direction of the quantum-dot structure unit for the variation of level width in the radial direction
The consistent homogeneous components structure of level width；
Disperse the medium of quantum dot：60.0-99.99%.
2. quantum dot film according to claim 1, which is characterized in that the quantum-dot structure unit is radial direction
On the wider graded alloy component structure of more outside level width, and the energy of quantum-dot structure unit adjacent in radial directions
Grade is continuous.
3. quantum dot film according to claim 1, which is characterized in that the quantum dot includes at least three in radial direction side
The quantum-dot structure unit arranged successively upwards, wherein, in at least three quantum-dot structures unit, positioned at center and surface
Quantum-dot structure unit be more outside level width is wider in the radial direction graded alloy component structure, and in radial direction side
The energy level of the quantum-dot structure unit of adjacent graded alloy component structure is continuous upwards；Quantum positioned at center and surface
A quantum-dot structure unit between point structural unit is homogeneous components structure.
4. quantum dot film according to claim 1, which is characterized in that the quantum dot includes two kinds of quantum dot
Structural unit, the quantum-dot structure unit of one of which type is the wider graded alloy of more outside level width in the radial direction
Component structure, another type of quantum-dot structure unit are the narrower graded alloy group of more outside level width in the radial direction
Separation structure, the quantum-dot structure unit of described two types are radially alternately distributed, and adjacent in radial directions successively
The energy level of quantum-dot structure unit be continuous.
5. quantum dot film according to claim 1, which is characterized in that the quantum-dot structure unit is radial direction
On the wider graded alloy component structure of more outside level width, and the energy level of adjacent quantum-dot structure unit is discontinuous
's.
6. quantum dot film according to claim 1, which is characterized in that the quantum-dot structure unit is radial direction
On the narrower graded alloy component structure of more outside level width, and the energy level of adjacent quantum-dot structure unit is discontinuous
's.
7. quantum dot film according to claim 1, which is characterized in that the quantum dot includes two amounts point structure list
Member, one of which quantum-dot structure unit are the wider graded alloy component structure of more outside level width in the radial direction, separately
A kind of quantum-dot structure unit is homogeneous components structure, and the inside of the quantum dot includes one or more graded alloy
The quantum-dot structure unit of component structure, and the quantum-dot structure unit of graded alloy component structure adjacent in radial directions
Energy level be continuous；The outside of the quantum dot includes the quantum-dot structure list of one or more homogeneous components structure
Member.
8. quantum dot film according to claim 1, which is characterized in that the quantum dot includes two amounts point structure list
Member, one of which quantum-dot structure unit be homogeneous components structure, another quantum-dot structure unit in the radial direction more to
The wider graded alloy component structure of outer level width, the inside of the quantum dot include one or more homogeneous components
The quantum-dot structure unit of structure, the outside of the quantum dot include the amount of one or more graded alloy component structure
Son point structural unit, and the energy level of the quantum-dot structure unit of graded alloy component structure adjacent in radial directions is continuous
's.
9. quantum dot film according to claim 1, which is characterized in that the quantum-dot structure unit be comprising II races and
The graded alloy component structure of VI races element or uniform alloy compositions structure.
10. quantum dot film according to claim 1, which is characterized in that each quantum-dot structure unit includes
2-20 layers of monoatomic layer or each quantum-dot structure unit include 1-10 layers of structure cell layer.
11. quantum dot film according to claim 1, which is characterized in that the glow peak wave-length coverage of the quantum dot is
400 nanometers to 700 nanometers.
12. quantum dot film according to claim 1, which is characterized in that the peak width at half height of the glow peak of the quantum dot
It is 12 nanometers to 80 nanometers.
13. according to claim 1-12 any one of them quantum dot films, which is characterized in that the medium includes at least one
High molecular material.
14. according to claim 1-12 any one of them quantum dot films, which is characterized in that the medium includes at least one
Macromolecule prepolymer material.
15. according to claim 1-12 any one of them quantum dot films, which is characterized in that the medium includes at least one
Oligomeric materials.
16. according to claim 1-12 any one of them quantum dot films, which is characterized in that the medium includes at least one
Small molecule material.
17. according to claim 1-12 any one of them quantum dot films, which is characterized in that the medium includes at least one
Inorganic material.
18. according to claim 1-12 any one of them quantum dot films, which is characterized in that the medium includes at least one
Bulk media material.
19. according to claim 1-12 any one of them quantum dot films, which is characterized in that the bulk media material includes
At least one organic material.
20. according to claim 1-12 any one of them quantum dot films, which is characterized in that the bulk media material includes
At least one inorganic material.
21. according to claim 1-12 any one of them quantum dot films, which is characterized in that the medium includes at least one
Nonpolar liquid.
22. according to claim 1-12 any one of them quantum dot films, which is characterized in that the medium includes at least one
Polar liquid.
23. the preparation method of a kind of quantum dot film as described in claim 1 ~ 22 is any, which is characterized in that including step：
Quantum dot is disperseed in the medium, then to stir 20 ~ 40 minutes first, in accordance with above-mentioned formula, obtains quantum dot film；Wherein, institute
It states quantum dot and includes at least one quantum-dot structure unit arranged successively in radial directions, the quantum-dot structure unit is
The graded alloy component structure of level width variation or the in the radial direction consistent homogeneous components knot of level width in the radial direction
Structure.
24. the preparation method of quantum dot film according to claim 23, which is characterized in that the preparation side of the quantum dot
Method includes step：
The first compound is synthesized in pre-position；
Second of compound, the first described compound and second of compound are synthesized on the surface of the first compound
Alloy compositions are identical or different；
Cation exchange reaction occurs between the first compound and second of chemical combination object and forms quantum dot, the quantum dot
Glow peak wavelength occur blue shift, red shift and it is constant in it is one or more.
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| CN110564404A (en) * | 2019-08-30 | 2019-12-13 | 苏州星烁纳米科技有限公司 | Preparation method of quantum dot, quantum dot composition and color film |
| WO2020147125A1 (en) * | 2019-01-18 | 2020-07-23 | 京东方科技集团股份有限公司 | Quantum dot structure and manufacturing method therefor, optical film and manufacturing method therefor, and display device |
| CN111647224A (en) * | 2019-03-04 | 2020-09-11 | 苏州星烁纳米科技有限公司 | Preparation method of quantum dot-polymer composite |
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| CN101842460A (en) * | 2007-10-30 | 2010-09-22 | 伊斯曼柯达公司 | Device containing non-blinking quantum dots |
| CN104736234A (en) * | 2012-08-30 | 2015-06-24 | 应用纳米技术中枢(Can)有限公司 | Method for producing core/shell nanoparticles and core/shell nanoparticles |
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| CN101866960B (en) * | 2010-02-10 | 2011-12-14 | 中国科学院上海硅酸盐研究所 | Method for preparing CdS-Bi2S3 composite nanocrystalline by utilizing partial cation exchange reaction |
| CN105514294A (en) * | 2016-01-27 | 2016-04-20 | 京东方科技集团股份有限公司 | Quantum dot electroluminescent device, hole transport method thereof and display device |
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| CN101842460A (en) * | 2007-10-30 | 2010-09-22 | 伊斯曼柯达公司 | Device containing non-blinking quantum dots |
| CN104736234A (en) * | 2012-08-30 | 2015-06-24 | 应用纳米技术中枢(Can)有限公司 | Method for producing core/shell nanoparticles and core/shell nanoparticles |
| CN105405941A (en) * | 2016-01-06 | 2016-03-16 | Tcl集团股份有限公司 | Quantum well structure-based quantum dot light emitting diode and preparing method thereof |
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| WO2020147125A1 (en) * | 2019-01-18 | 2020-07-23 | 京东方科技集团股份有限公司 | Quantum dot structure and manufacturing method therefor, optical film and manufacturing method therefor, and display device |
| CN111647224A (en) * | 2019-03-04 | 2020-09-11 | 苏州星烁纳米科技有限公司 | Preparation method of quantum dot-polymer composite |
| CN111647224B (en) * | 2019-03-04 | 2023-03-31 | 苏州星烁纳米科技有限公司 | Preparation method of quantum dot-polymer composite |
| CN110564404A (en) * | 2019-08-30 | 2019-12-13 | 苏州星烁纳米科技有限公司 | Preparation method of quantum dot, quantum dot composition and color film |
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