CN108269912B - Titanium lead magnesio-niobate ferroelectric thin film gallium nitride-based epitaxial is integrated and preparation method thereof - Google Patents
Titanium lead magnesio-niobate ferroelectric thin film gallium nitride-based epitaxial is integrated and preparation method thereof Download PDFInfo
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- CN108269912B CN108269912B CN201810019438.2A CN201810019438A CN108269912B CN 108269912 B CN108269912 B CN 108269912B CN 201810019438 A CN201810019438 A CN 201810019438A CN 108269912 B CN108269912 B CN 108269912B
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- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
Abstract
Integrated and preparation method thereof the present invention relates to titanium lead magnesio-niobate ferroelectric thin film gallium nitride-based epitaxial, the titanium lead magnesio-niobate ferroelectric thin film is the TiO by being sequentially formed on gallium nitride semiconductor substrate by pulsed laser deposition technique2Buffer layer, cobalt strontium lanthanum oxide buffer layer and titanium lead magnesio-niobate ferroelectric thin film are constituted；The orientation of the gallium nitride semiconductor substrate includes (0002) face, and the epitaxial orientation of the titanium lead magnesio-niobate ferroelectric thin film is (111) face, and the epitaxial orientation of the cobalt strontium lanthanum oxide buffer layer is (111) face, the TiO2Buffer layer is Rutile Type, epitaxial orientation is (100) face.
Description
Technical field
The invention belongs to ferroelectric thin-flim materials technical fields.The present invention relates to perovskite type titanium lead magnesio-niobate ferroelectric thin film with
The extension of wurtzite-type gallium nitride semiconductor integrates and its technology of preparing.
Background technique
Integrated ferroelectrics based on ferroelectric thin film and semiconductor integration technology development are current Condensed Matter Physics, material science
And the intersection forward position of microelectronics science, have in ferro-electric field effect transistor, ferroelectric memory and advanced sensors field
Important application prospect.In field of semiconductor materials, gallium nitride (GaN) is used as third generation semiconductor material with wide forbidden band, opposite
Have broader forbidden bandwidth, higher critical breakdown strength and superior electronic transport special in traditional semiconductor material
Property.Therefore, ferroelectric thin film and the integrated of GaN have important research for exploitation high-performance and multi-functional GaN base microelectronic component
Value.Currently, the research in GaN base the Research of Integrated Ferroelectric Devices field is less, and it is limited to a few biography with the GaN ferroelectric thin film integrated
System ferroelectric material.
Titanium lead magnesio-niobate ((1-x) Pb (Mg1/3Nb2/3)O3-xPbTiO3, PMN-PT) and it is a kind of typical Ca-Ti ore type relaxation
Ferroelectric material has the piezoelectric modulus (d of superelevation in quasi- homotype phase boundary vicinity33~2500pC/N) and biggish remaining iron
Electric polarization (μ of Pr~45 C/cm2).So, the spontaneous polarization of the iron electric polarization of PMN-PT ferroelectric thin film and GaN semiconductor it
Between interface coupling effect can push the further development of advanced GaN base microelectronic component.In most cases, single crystal epitaxial
Film has superior physical characteristic, better interface state and stronger controllability relative to polycrystal film.However, by
There is different crystal structures, biggish lattice mismatch and incompatible growth conditions from GaN in PMN-PT, realize PMN-
The integrated extension of PT and GaN is still important challenge.Introducing buffer layer is the effective means to solve the above problems.However current
In most common buffer layer, SrRuO3/SrTiO3/TiO2Hetero-junctions buffer layer has complicated structure, and MgO buffer layer is unfavorable for outer
The growth for prolonging hearth electrode, which limit the practical applications of GaN base the Research of Integrated Ferroelectric Devices.Therefore, a kind of novel excellent delay is designed
Layer is rushed to realize that extension of the PMN-PT ferroelectric thin film on GaN is integrated and there is important research significance.
Summary of the invention
In view of the above-mentioned problems, the object of the present invention is to provide a kind of by introducing structure simply and haveing excellent performance new
Type buffer layer realizes the integrated method with preparation of Ca-Ti ore type PMN-PT ferroelectric thin film extension on buergerite GaN.
On the one hand, the present invention provides a kind of titanium lead magnesio-niobate ferroelectric thin film, the titanium lead magnesio-niobate ferroelectric thin film be by
The TiO on gallium nitride semiconductor substrate is sequentially formed at by pulsed laser deposition technique2Buffer layer, cobalt strontium lanthanum oxide buffer layer with
And titanium lead magnesio-niobate ferroelectric thin film is constituted；
The orientation of the gallium nitride semiconductor substrate includes (0002) face, and the extension of the titanium lead magnesio-niobate ferroelectric thin film takes
It is (111) face, the TiO to the epitaxial orientation for (111) face, the cobalt strontium lanthanum oxide buffer layer2Buffer layer is Rutile Type, outside
Prolong and is oriented to (100) face.
Creatively in gallium nitride semiconductor substrate (0002) and titanium lead magnesio-niobate ferroelectric thin film, (epitaxial orientation is the present invention
(111) face) between introduce TiO2Buffer layer, cobalt strontium lanthanum oxide buffer layer double-buffering layer, to realize titanium lead magnesio-niobate ferroelectric thin film edge
(111) face it is single-orientated.Wherein, LSCO/TiO2The epitaxial orientation of novel double-buffering layer and GaN semiconductive thin film substrate closes
System are as follows:Due to LSCO and titanium magnoniobate galvanized iron
Conductive film crystal structure identical (Perovskite Ferroelectric Thin Films) and lattice mismatch is lower, therefore LSCO/TiO2Novel buffer layer energy
The lattice mismatch between Perovskite Ferroelectric Thin Films and GaN semiconductor substrate is enough significantly reduced, Perovskite Ferroelectric Thin Films are induced
Extension on GaN is integrated, and the lattice mismatch between PMN-PT and GaN is made to be reduced to 4.3% by 12.1%, thus real
Existing titanium lead magnesio-niobate ferroelectric thin film is along the single-orientated growth in (111) face.Meanwhile La1-ySryCoO3Buffer layer thin film has excellent
Electric conductivity, can be as the extension hearth electrode of Perovskite Ferroelectric Thin Films.And the two (TiO2Buffer layer, cobalt strontium lanthanum oxide buffering
Layer) there is synergistic effect, it is indispensable.If not depositing Ti O2Buffer layer only selects one layer of cobalt strontium lanthanum oxide buffer layer, then obtaining
Polycrystalline is also presented as polycrystalline state so as to cause the titanium lead magnesio-niobate ferroelectric thin film grown in the cobalt strontium lanthanum oxide buffer layer sheet obtained
State, degradation.If only depositing Ti O2Buffer layer does not deposit cobalt strontium lanthanum oxide buffer layer, then the titanium magnoniobate grown above
Polycrystalline state is also presented in lead ferroelectric film, and without hearth electrode, the ferroelectricity that cannot effectively test titanium lead magnesio-niobate ferroelectric thin film is special
Property.
Preferably, the chemical formula group of the titanium lead magnesio-niobate ferroelectric thin film becomes (1-x) Pb (Mg1/3Nb2/3)O3-
xPbTiO3, 0.28≤x≤0.35, with a thickness of 300~500nm.
Preferably, the TiO2Buffer layer with a thickness of 1~5nm, relatively thin TiO2Buffer layer thickness can improve the table of film
Surface evenness.
Preferably, the chemical formula group of the cobalt strontium lanthanum oxide buffer layer becomes La1-ySryCoO3, 0.4≤y≤0.6, with a thickness of
40~60nm, in the thickness range, cobalt strontium lanthanum oxide plays the role of buffer layer, while it is suitable for excellent electric conductivity
For the hearth electrode of ferroelectric thin film.
On the other hand, the present invention also provides a kind of preparation methods of titanium lead magnesio-niobate ferroelectric thin film as described above, comprising:
(1) with TiO2Ceramic block is target, grows TiO in GaN semiconductor substrate using pulsed laser deposition technique2
Film obtains the TiO2Buffer layer；
(2) with La1-ySryCoO3Ceramic block is target, is grown on TiO2 buffer layer using pulsed laser deposition technique
La1-ySryCoO3Film obtains the cobalt strontium lanthanum oxide buffer layer；
(3) with (1-x) Pb (Mg1/3Nb2/3)O3-xPbTiO3Monocrystalline block is target, is existed using pulsed laser deposition technique
Titanium lead magnesio-niobate film is grown on cobalt strontium lanthanum oxide buffer layer, obtains the titanium lead magnesio-niobate ferroelectric thin film.
Preferably, the technological parameter of the pulsed laser deposition technique includes: that chamber vacuum degree is evacuated to≤2 in step (1)
×10-4Pa, depositing temperature are 500~600 DEG C, and deposition oxygen pressure is 1 × 10-3~1 × 10-1Pa, deposition rate are 0.5~1nm/
Minute, laser energy density is 1~3J/cm2。
Preferably, in step (2), the technological parameter of the pulsed laser deposition technique include: depositing temperature be 650~
700 DEG C, deposition oxygen pressure is 20~30Pa, and deposition rate is 1~2nm/ minutes, and laser energy density is 1~3J/cm2。
Preferably, in step (3), the technological parameter of the pulsed laser deposition technique include: depositing temperature be 500~
550 DEG C, deposition oxygen pressure is 20~30Pa, and deposition rate is 3~5nm/ minutes, and laser energy density is 3~5J/cm2。
It is cleaned by ultrasonic preferably, GaN semiconductor substrate is sequentially placed into acetone, ethyl alcohol and deionized water, then immerses dilute
Cleaning removal surface oxide layer in hydrochloric acid solution, and with being dried with nitrogen.
Also, preferably, the concentration of hydrochloric acid is 1.2~2.4mol/L；Soaking time is 2~4 minutes.
The beneficial effects of the present invention are:
On the one hand, it is designed in GaN (0002) semiconductor substrate and to be prepared for a kind of structure simple and have excellent performance
LSCO/TiO2 double-buffering layer can induce extension of most of Perovskite Ferroelectric Thin Films on GaN integrated；
On the other hand, by introducing designed LSCO/TiO2Double-buffering layer significantly reduces between PMN-PT and GaN
Lattice mismatch obtains the PMN-PT epitaxial ferroelectric film of (111) orientation on GaN (0002) semiconductor, realizes PMN-
The extension of PT ferroelectric thin film and GaN semiconductor is integrated.Since the intrinsic iron electric polarization direction of the ferroelectric material is along<111>side
To epitaxial orientation prepared by the present invention is (111) face titanium lead magnesio-niobate ferroelectric thin film, compared to other orientations, is theoretically had
There are bigger remanent polarization and saturated polarization and slightly higher coercive field.
Detailed description of the invention
Fig. 1 is PMN-PT/LSCO/TiO prepared by the present invention2/ GaN epitaxy heterojunction structure and PMN-PT ferroelectric thin film electricity
Learn the schematic diagram of performance test；
Fig. 2 is the LSCO/TiO prepared in embodiment 12The RHEED map of each layer film of/GaN hetero-junctions；
Fig. 3 is the LSCO/TiO prepared in embodiment 12The XRD spectrum of/GaN hetero-junctions；
Fig. 4 is the AFM feature image of the LSCO film surface prepared in embodiment 1；
Fig. 5 is the PMN-PT/LSCO/TiO prepared in embodiment 12The XRD spectrum of/GaN hetero-junctions；
Fig. 6 is the PMN-PT/LSCO/TiO prepared in embodiment 12(101) face PMN-PT and GaN in/GaN hetero-junctionsThe XRD-phi scanning spectra in face；
Fig. 7 is the PMN-PT/LSCO/TiO prepared in embodiment 12Each layer film Lattice Matching relation schematic diagram of/GaN；
Fig. 8 is the XRD spectrum of the PMN-PT/GaN hetero-junctions prepared in comparative example 1；
Fig. 9 is the PMN-PT/LSCO/TiO prepared in embodiment 12The SEM image of/GaN hetero-junctions surface and section；
Figure 10 is the ferroelectric hysteresis loop map of the PMN-PT ferroelectric thin film for preparing under different voltages in embodiment 1；
Figure 11 is the ferroelectric hysteresis loop map of the PMN-PT ferroelectric thin film for preparing in the saturated condition in embodiment 1；
Figure 12 is the dielectric property map of the PMN-PT ferroelectric thin film prepared in embodiment 1.
Specific embodiment
The present invention is further illustrated below by way of following embodiments, it should be appreciated that following embodiments are merely to illustrate this
Invention, is not intended to limit the present invention.
The present invention is by introducing the LSCO/TiO that structure is simple and has excellent performance2Novel buffer layer realizes Ca-Ti ore type
PMN-PT ferroelectric thin film and wurtzite-type GaN semiconductor epitaxial are integrated.The LSCO/TiO2Double-buffering layer is by passing through pulse laser
The Rutile Type TiO that deposition technique is successively grown on GaN semiconductive thin film substrate2Buffer layer and with Perovskite Phase La1-ySryCoO3Buffer layer is constituted, and the heterojunction structure constituted is followed successively by GaN semiconductor substrate from top to bottom and leads to referring to Fig. 1
The TiO of extra pulse laser deposition technique preparation2Buffer layer, LSCO buffer layer and PMN-PT ferroelectric thin film.The titanium lead magnesio-niobate
The chemical formula group of ferroelectric thin film becomes (1-x) Pb (Mg1/3Nb2/3)O3-xPbTiO3, 0.28≤x≤0.35, thickness can for 300~
500nm.The TiO2The thickness of buffer layer can be 1~5nm.The chemical formula group of the cobalt strontium lanthanum oxide buffer layer becomes La1- ySryCoO3, 0.4≤y≤0.6, thickness can be 40~60nm.
The present invention uses pulsed laser deposition technique, designs in GaN semiconductor substrate and is prepared for that structure is simple and property
The excellent LSCO/TiO of energy2Double-buffering layer.By introducing designed LSCO/TiO2Double-buffering layer, reduce titanium lead magnesio-niobate with
Lattice mismatch between GaN realizes perovskite type titanium lead magnesio-niobate ferroelectric thin film and wurtzite-type GaN semiconductor substrate
Extension is integrated, and the titanium lead magnesio-niobate film being integrated in GaN semiconductor substrate has excellent ferroelectric properties.The present invention for
The development of GaN base the Research of Integrated Ferroelectric Devices has impetus.Following exemplary illustrates PMN-PT ferroelectric thin film and GaN semiconductor
The method of the integrated preparation of extension.
The cleaning of GaN semiconductor substrate.Selected substrate is process for sapphire-based epitaxial wafer GaN (0002)/Al2O3.By the lining
Bottom is sequentially placed into acetone, is cleaned by ultrasonic 5-10 minutes in second alcohol and water, and it is molten to be then placed in the hydrochloric acid that concentration is 1.2-2.4mol/L
It is impregnated 2-4 minutes in liquid, is finally putting into deionized water and is cleaned by ultrasonic 5-10 minutes, and with being dried with nitrogen.
TiO2Buffer layer preparation.The present invention is with TiO2Ceramic block is target.First by thin film deposition system back end vacuum degree
It is evacuated to≤2 × 10-4Pa, with 5-10 DEG C/min of heating substrate of heating rate to 500-600 DEG C.Pass through pulsed laser deposition technique
Grow TiO2The parameter of film includes: depositing temperature are as follows: 500-600 DEG C；Deposit oxygen pressure are as follows: 1 × 10-3-1×10-1Pa；Laser energy
Metric density are as follows: 1-3J/cm2；Deposition rate is 0.5-1nm/ minutes.The TiO deposited2Film thickness is 1-5nm.
The preparation of LSCO buffer layer.The present invention is with La1-ySryCoO3(0.4≤x≤0.6) ceramic block is target, using pulse
Laser deposition technique is in TiO2LSCO buffer layer is grown on buffer layer.With 5-10 DEG C/min of heating substrate of heating rate to 650-
700℃.The parameter that LSCO film is grown by pulsed laser deposition technique includes: depositing temperature are as follows: 650-700 DEG C；Deposit oxygen
Pressure are as follows: 20-30Pa；Laser energy density are as follows: 1-3J/cm2；Deposition rate is 1-2nm/ minutes.The LSCO film deposited is thick
Degree is 40-60nm.
The preparation of PMN-PT ferroelectric thin film.The present invention is with (1-x) Pb (Mg1/3Nb2/3)O3-xPbTiO3(0.28≤x≤0.35)
Monocrystalline block is target, and PMN-PT ferroelectric thin film is grown on LSCO buffer layer using pulsed laser deposition technique.With the speed that cools down
5-10 DEG C/min of adjusting underlayer temperature of rate is to 500-550 DEG C.PMN-PT ferroelectric thin film is grown by pulsed laser deposition technique
Parameter includes: depositing temperature are as follows: 500-550 DEG C；Deposit oxygen pressure are as follows: 20-30Pa；Laser energy density are as follows: 3-5J/cm2；Deposition
Rate is 3-5nm/ minutes.The PMN-PT ferroelectric film thickness deposited is 300-500nm.After film deposits, with 4-6
DEG C/min rate of temperature fall be reduced to room temperature.
Enumerate embodiment further below with the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this
Invention is further described, and should not be understood as limiting the scope of the invention, those skilled in the art is according to this hair
Some nonessential modifications and adaptations that bright above content is made all belong to the scope of protection of the present invention.Following examples are specific
Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in hereafter exemplary specific value.
Embodiment 1
The cleaning of GaN semiconductor substrate.Selected substrate is process for sapphire-based epitaxial wafer GaN (0002)/Al2O3.It will be described
Substrate is sequentially placed into acetone, is cleaned by ultrasonic 8 minutes in second alcohol and water, is then placed in the hydrochloric acid solution that concentration is 1.8mol/L and soaks
Bubble 3 minutes, is finally putting into deionized water and is cleaned by ultrasonic 8 minutes, and with being dried with nitrogen；
TiO2Buffer layer preparation.The present invention is with TiO2Ceramic block is target.First by thin film deposition system back end vacuum degree
It is evacuated to≤2 × 10-4Pa, with 5 DEG C/min of heating substrates of heating rate to 550 DEG C.TiO is grown by pulsed laser deposition technique2
The parameter of film includes: depositing temperature are as follows: 550 DEG C；Deposit oxygen pressure are as follows: 1 × 10-3Pa；Laser energy density are as follows: 1J/cm2；It is heavy
Product rate are as follows: 0.5nm/ minutes.The TiO deposited2Film thickness is 2nm；
The preparation of LSCO buffer layer.The present invention is with La0.5Sr0.5CoO3Ceramic block is target, deposits skill using pulse laser
Art is in TiO2LSCO buffer layer is grown on buffer layer.With 5 DEG C/min of heating substrates of heating rate to 650 DEG C.Pass through pulse laser
The parameter that deposition technique grows LSCO film includes: depositing temperature are as follows: 650 DEG C；Deposit oxygen pressure are as follows: 25Pa；Laser energy density
Are as follows: 2J/cm2；Deposition rate are as follows: 1nm/ minutes.The LSCO film thickness deposited is 60nm；
The preparation of PMN-PT ferroelectric thin film.The present invention is with 0.7Pb (Mg1/3Nb2/3)O3-0.3PbTiO3Monocrystalline block is target,
PMN-PT ferroelectric thin film is grown on LSCO buffer layer using pulsed laser deposition technique.With 5 DEG C/min of adjusting linings of rate of temperature fall
Bottom temperature is to 525 DEG C.The parameter that PMN-PT ferroelectric thin film is grown by pulsed laser deposition technique includes: depositing temperature are as follows: 525
℃；Deposit oxygen pressure are as follows: 30Pa；Laser energy density are as follows: 4J/cm2；Deposition rate are as follows: 3nm/ minutes.The PMN-PT iron deposited
Conductive film is with a thickness of 450nm.After film deposits, room temperature is reduced to 5 DEG C/min of rate of temperature fall.
LSCO/TiO2Buffer layer characterization.(a), (b) and (c) are respectively LSCO/TiO in Fig. 22GaN is served as a contrast in/GaN hetero-junctions
Bottom, TiO2With the RHEED map of LSCO buffer layer, its epitaxial orientation relationship known to analysis are as follows: Fig. 3 is LSCO/TiO2The XRD spectrum of/GaN hetero-junctions, with
Orientation relationship matches in RHEED.In Fig. 3 illustration be LSCO film (111) face peak position rocking curve, from illustration it is found that
LSCO buffer layer thin film has preferable epitaxial crystallization quality.Fig. 4 is the AFM feature image on LSCO buffer layer thin film surface,
Flatness with higher.Show to be prepared for the LSCO/ that structure is simple and has excellent performance in GaN semiconductor substrate above
TiO2Novel buffer layer.
PMN-PT ferroelectric thin film structural characterization.Fig. 5 is the PMN-PT/LSCO/TiO of preparation2The XRD diagram of/GaN hetero-junctions
Spectrum, PMN-PT ferroelectric thin film are pure phase perovskite structure and grow along (111) planar orientation.Illustration is PMN-PT film in Fig. 5
(111) rocking curve of face peak position, it is found that PMN-PT ferroelectric thin film has preferable epitaxial crystallization quality from illustration.Fig. 6 is
The PMN-PT/LSCO/TiO of preparation2(101) face PMN-PT and GaN in/GaN hetero-junctionsThe XRD-phi scanning figure in face
Spectrum, its epitaxial orientation relationship known to analysis are as follows:Comprehensive RHEED and
XRD result obtains the epitaxial orientation relationship of hetero-junctions entirety are as follows: Its Lattice Matching relationship is as shown in Figure 7.Fig. 9
For the PMN-PT/LSCO/TiO of preparation2The SEM image of/GaN hetero-junctions surface and section, wherein LSCO is with a thickness of 60nm, PMN-
PT film is columnar crystal structure, with a thickness of 450nm.Illustration is PMN-PT film surface SEM image in Fig. 9, can from illustration
Know that PMN-PT film column Jingjing grain size is about 70nm.
The preparation of PMN-PT ferroelectric thin film electrical testing electrode.The mask for being 180 microns using aperture, using magnetron sputtering
The round platinum electrode that method is sputtered on PMN-PT ferroelectric thin film upper surface and LSCO extension hearth electrode with a thickness of 50nm forms bottom
The sandwich structure of electrode LSCO, PMN-PT ferroelectric thin film and top electrode Pt, as shown in Figure 1.
PMN-PT ferroelectric thin film electrology characteristic characterization.Figure 10 is the PMN-PT epitaxial ferroelectric film of preparation under different voltages
Ferroelectric hysteresis loop map, test frequency 100Hz, prepared PMN-PT epitaxial ferroelectric film ferroelectric properties is good, in Figure 10 insert
Figure is the curve spectrum that PMN-PT ferroelectric thin film remanent polarization and coercive field change with external electric field, further illustrates PMN-
PT thin-film ferroelectric function admirable.Figure 11 is ferroelectric hysteresis loop figure of the PMN-PT epitaxial ferroelectric film of preparation under saturated polarization state
Spectrum, PMN-PT epitaxial ferroelectric film remanent polarization are 11.3 μ C/cm2, saturated polarization is 41.2 μ C/cm2, coercive field
For 34.1kV/cm.Figure 12 is the dielectric property map of the PMN-PT epitaxial ferroelectric film of preparation, the dielectric constant in 1kHz frequency
It is 2035, dielectric loss 0.08.
Comparative example 1
Substantially with embodiment 1, difference is not deposit LSCO/TiO preparation process2Buffer layer is heavy by pulse laser
Product technology grows PMN-PT ferroelectric thin film directly in GaN semiconductor substrate, and prepared PMN-PT ferroelectric film thickness is
450nm.Fig. 8 is the XRD spectrum of the PMN-PT/GaN hetero-junctions of preparation, and prepared PMN-PT ferroelectric thin film is polycrystalline state and has
Jiao Lvshi miscellaneous phase generates.
Claims (8)
1. a kind of titanium lead magnesio-niobate ferroelectric thin film, which is characterized in that the titanium lead magnesio-niobate ferroelectric thin film is by being swashed by pulse
Light deposition technology is sequentially formed at the TiO on gallium nitride semiconductor substrate2Buffer layer, cobalt strontium lanthanum oxide buffer layer and titanium magnoniobate
Lead ferroelectric film is constituted；
The orientation of the gallium nitride semiconductor substrate includes (0002) face, and the epitaxial orientation of the titanium lead magnesio-niobate ferroelectric thin film is
(111) face, the epitaxial orientation of the cobalt strontium lanthanum oxide buffer layer are (111) face, the TiO2Buffer layer is Rutile Type, extension takes
To for (100) face.
2. titanium lead magnesio-niobate ferroelectric thin film according to claim 1, which is characterized in that the titanium lead magnesio-niobate ferroelectric thin film
Chemical formula group become (1-x) Pb (Mg1/3Nb2/3)O3-xPbTiO3, 0.28≤x≤0.35, with a thickness of 300~500 nm.
3. titanium lead magnesio-niobate ferroelectric thin film according to claim 1 or 2, which is characterized in that the TiO2The thickness of buffer layer
For 1~5 nm.
4. titanium lead magnesio-niobate ferroelectric thin film according to claim 1 or 2, which is characterized in that the cobalt strontium lanthanum oxide buffer layer
Chemical formula group become La1-ySryCoO3, 0.4≤y≤0.6, with a thickness of 40~60 nm.
5. a kind of preparation method of the titanium lead magnesio-niobate ferroelectric thin film as described in any one of claim 1-4, which is characterized in that packet
It includes:
(1) with TiO2Ceramic block is target, grows TiO in GaN semiconductor substrate using pulsed laser deposition technique2It is thin
Film obtains the TiO2Buffer layer；
(2) with La1-ySryCoO3Ceramic block is target, using pulsed laser deposition technique in TiO2La is grown on buffer layer1- ySryCoO3Film obtains the cobalt strontium lanthanum oxide buffer layer；
(3) with (1-x) Pb (Mg1/3Nb2/3)O3-xPbTiO3Monocrystalline block is target, using pulsed laser deposition technique in cobalt acid
Titanium lead magnesio-niobate film is grown on strontium lanthanum buffer layer, obtains the titanium lead magnesio-niobate ferroelectric thin film.
6. preparation method according to claim 5, which is characterized in that in step (1), the pulsed laser deposition technique
Technological parameter includes: that chamber vacuum degree is evacuated to≤2 × 10-4Pa, depositing temperature are 500~600 DEG C, and deposition oxygen pressure is 1 × 10-3
~1 × 10-1Pa, deposition rate are 0.5~1 nm/ minutes, and laser energy density is 1~3 J/cm2。
7. preparation method according to claim 5 or 6, which is characterized in that in step (2), the pulse laser deposits skill
The technological parameter of art includes: that depositing temperature is 650~700 DEG C, and deposition oxygen pressure is 20~30 Pa, and deposition rate is 1~2 nm/
Minute, laser energy density is 1~3 J/cm2。
8. preparation method according to claim 5 or 6, which is characterized in that in step (3), the pulse laser deposits skill
The technological parameter of art includes: that depositing temperature is 500~550 DEG C, and deposition oxygen pressure is 20~30 Pa, and deposition rate is 3~5 nm/
Minute, laser energy density is 3~5 J/cm2。
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