CN108269826A - Active matrix organic light-emitting diode display screen and display device - Google Patents
Active matrix organic light-emitting diode display screen and display device Download PDFInfo
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- CN108269826A CN108269826A CN201710002199.5A CN201710002199A CN108269826A CN 108269826 A CN108269826 A CN 108269826A CN 201710002199 A CN201710002199 A CN 201710002199A CN 108269826 A CN108269826 A CN 108269826A
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- layer
- display screens
- amoled display
- metal layer
- vdd line
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
An embodiment of the present invention provides a kind of AMOLED display screens and display device, which includes metal layer, drive voltage signal vdd line and substrate；The metal layer is oppositely arranged with the substrate, and is bonded on the substrate；The vdd line is connect with the metal layer, and the vdd line is made to form shunt circuit with the metal layer.The embodiment of the present invention reduces the space for occupying AMOLED display screens by setting metal layer, and reduces the parallel resistance between vdd line；So as to reduce the resistance of driving power, the electric current of driving power is increased, when flowing a current through vdd line, IR drop caused by vdd line reduce more obvious.The AMOLED display screens of the embodiment of the present invention, it is simple in structure, the IR drop of vdd line are reduced without using the mode with the pixel compensation circuit of IR drop, reduce the cost of AMOLED display screens.
Description
Technical field
The present embodiments relate to display technology fields more particularly to a kind of active matrix organic light-emitting diode to show
Screen and display device.
Background technology
Active matrix organic light-emitting diode (Active-matrix Organic Light Emitting Diode,
AMOLED it is) active luminescent device, there is high contrast, wide viewing angle, low-power consumption, thinner.
In AMOLED drive voltage signals (VDD) line, when electric current flows through vdd line, since the self-resistance of vdd line divides production
Raw power voltage-drop (IR-drop), can influence AMOLED brightness of display screen uniformities.Fig. 1 is AMOLED display screens in the prior art
Structure diagram, as shown in Figure 1, AMOLED display screens of the prior art can include VDD networks 10, vdd line 11
With substrate 12.Wherein the number of vdd line 11 can be a plurality of, only be illustrated in Fig. 1 with a vdd line 11.
In order to reduce the IR-drop of vdd line 11, vdd line 11 can be utilized to form an interlaced VDD network
10, and be arranged on the substrate 12 of AMOLED display screens and then by the VDD networks 10 it is in parallel with other vdd lines 11 even
It connects, reduces the resistance of driving power in driving circuit, increase the electric current in vdd line, when electric current flows through vdd line 11, vdd line 11
Generated IR-drop then can be reduced accordingly.
But the VDD networks 10 of 11 interlaced formation of vdd line, the thickness of two 11 diameters of vdd line is equivalent to,
The space for occupying AMOLED display screens is larger, and as AMOLED display screens are increasing, VDD networks 10 are for reducing
The effect of the IR-drop of vdd line 11 is poor, if reducing vdd line by way of the pixel compensation circuit with IR-drop
IR-drop, pixel compensation circuit is more complicated, and cost is higher.
Invention content
The embodiment of the present invention provides a kind of active matrix organic light-emitting diode display screen and display device, by setting gold
Belong to layer to reduce the space for occupying AMOLED display screens, and reduce the parallel resistance between vdd line；So as to reduce driving
The resistance of power supply increases the electric current of driving power, and when flowing a current through vdd line, IR-drop caused by vdd line is reduced more
Add it is apparent, solve reduced by the way of the pixel compensation circuit with IR-drop the IR-drop costs of vdd line compared with
The problem of high.
The embodiment of the present invention provides a kind of active matrix organic light-emitting diode AMOLED display screens, which is characterized in that packet
Include metal layer, drive voltage signal vdd line and substrate；
The metal layer is oppositely arranged with the substrate, and is bonded on the substrate；
The vdd line is connect with the metal layer, and the vdd line is made to form shunt circuit with the metal layer.
Further, AMOLED display screens described above, further include thin film transistor (TFT) TFT layer；
The TFT layer includes active layer, grid and input and output layer, and the input and output layer includes source electrode and drain electrode；
The active layer connects, and be oppositely arranged with the metal layer respectively with the source electrode and the drain electrode；
The grid is oppositely arranged with the active layer, and is connected to the control terminal of external control circuit.
Further, AMOLED display screens described above set the first oxidation between the active layer and the grid
Layer, the second oxide layer is set between the grid and the input and output layer.
Further, AMOLED display screens described above, in first oxide layer, second oxide layer and described
In the first structure that active layer is formed, the first via and the second via are set；
The active layer is connect by first via with the source electrode, the active layer by second via with
The drain electrode connection.
Further, AMOLED display screens described above set third oxygen between the active layer and the metal layer
Change layer.
Further, AMOLED display screens described above, in first oxide layer, second oxide layer, described
In the second structure that active layer and the third oxide layer are formed, third via is set；
The vdd line is connect by the third via with the metal layer.
Further, AMOLED display screens described above, first oxide layer, second oxide layer and described
The ingredient of three oxide layers is identical or different.
Further, AMOLED display screens described above, the metal layer are formed using copper powder or aluminium powder.
Further, AMOLED display screens described above, it is described to be basically provided with the 4th oxide layer.
The embodiment of the present invention also provides a kind of display device, which is characterized in that including as described in any in claim 1-9
AMOLED display screens.
The AMOLED display screens and display device of the embodiment of the present invention are shown by setting metal layer to reduce occupancy AMOLED
The space of display screen, and reduce the parallel resistance between vdd line；So as to reduce the resistance of driving power, driving is increased
The electric current of power supply, when flowing a current through vdd line, IR-drop caused by vdd line reduces more obvious.The embodiment of the present invention
AMOLED display screens, it is simple in structure, reduce vdd line without using the mode with the pixel compensation circuit of IR-drop
IR-drop reduces the cost of AMOLED display screens.
Description of the drawings
Attached drawing described herein is used for providing further understanding the embodiment of the present invention, forms the embodiment of the present invention
A part, the illustrative embodiments and their description of the embodiment of the present invention are not formed for explaining the embodiment of the present invention to this hair
The improper restriction of bright embodiment.In the accompanying drawings：
Fig. 1 is the structure diagram of AMOLED display screens in the prior art；
Fig. 2 is the structure diagram of the embodiment one of the AMOLED display screens of the embodiment of the present invention；
Fig. 3 is the structure diagram of the embodiment two of the AMOLED display screens of the embodiment of the present invention.
Specific embodiment
Purpose, technical scheme and advantage to make the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
Technical solution of the embodiment of the present invention is clearly and completely described in specific embodiment and corresponding attached drawing.Obviously, it is described
Embodiment is only part of the embodiment of the embodiment of the present invention, instead of all the embodiments.Based on the reality in the embodiment of the present invention
Apply example, those of ordinary skill in the art's all other embodiments obtained without making creative work all belong to
In the range of protection of the embodiment of the present invention.
Below in conjunction with attached drawing, the technical solution of each embodiment offer of embodiment that the present invention will be described in detail.
Embodiment one
Fig. 2 is the structure diagram of the embodiment one of the AMOLED display screens of the embodiment of the present invention, as shown in Fig. 2, this hair
The AMOLED display screens of bright embodiment replace VDD networks 10, therefore the present invention on the basis of Fig. 1, using metal layer 20
The AMOLED display screens of embodiment can include metal layer 20, vdd line 11 and substrate 12.
Metal layer 20 and substrate 12 can be oppositely arranged, and using fittings such as optical cements on the substrate 12, metal layer 20
Thickness can be set according to actual demand, and the present embodiment is not particularly limited, but its thickness is less than 2 times of the diameter of vdd line 11.
The present embodiment is preferably that the thickness of metal layer 20 is identical with the diameter of vdd line 11.In this way, 20 occupied AMOLED of metal layer is shown
Display screen space can accordingly reduce, and then make AMOLED display screens thinner.
In the embodiment of the present invention, metal layer 20 is equivalent to using one planar structure of formation after a plurality of metal wire parallel connection,
Vdd line 11 with metal layer 20 can connect, makes vdd line 11 and metal by total cross-sectional area increase, total resistance smaller later
20 formation shunt circuit of layer, the resistance smaller of the driving power obtained in this way, electric current bigger, so when electric current flows through vdd line 11,
What IR-drop can be reduced caused by vdd line 11 is more, for the AMOLED display screens of large-size, the area of metal layer 20
Also bigger, resistance is smaller, and the effect that the IR-drop of vdd line 11 is reduced using metal layer 20 is become apparent from.
The AMOLED display screens of the embodiment of the present invention reduce the sky for occupying AMOLED display screens by setting metal layer 20
Between, and reduce the parallel resistance between vdd line 11；So as to reduce the resistance of driving power, driving power is increased
Electric current, when flowing a current through vdd line 11, IR-drop caused by vdd line reduces more obvious.The embodiment of the present invention
AMOLED display screens, it is simple in structure, reduce vdd line 11 without using the mode with the pixel compensation circuit of IR-drop
IR-drop, reduce the costs of AMOLED display screens.
Embodiment two
Fig. 3 is the structure diagram of the embodiment two of the AMOLED display screens of the embodiment of the present invention, as shown in figure 3, this hair
The AMOLED display screens of bright embodiment can also include thin film transistor (TFT) (Thin FilmTransistor, TFT) layer 13,
In, TFT layer 13 includes active layer 131, grid 132 and input and output layer 133, and input and output layer 133 includes source electrode 1331 and leakage
Pole 1332.Active layer 131 is connect, and be oppositely arranged with metal layer 20 respectively with source electrode 1331 and drain electrode 1332；Grid 132 is with having
Active layer 131 is oppositely arranged, and is connected to the control terminal of external control circuit.
During a specific implementation, the active layer 131 in the embodiment of the present invention can select but be not limited to polycrystalline
Silicon (Ploy Silicon, P-Si), grid 132, source electrode 1331 and drain electrode 1332 can select corresponding according to actual demand
Metal material is made.After the control terminal of external control circuit reaches conducting voltage to the voltage that grid 132 applies, source electrode 1331
It can be connected between drain electrode 1332, TFT layer 13 is switched on, so as to which TFT layer 13 is made to drive corresponding pixel unit.
Due to active layer 131, grid 132, input and output layer 133 and metal layer 20 showing there may be surface irregularity
As, and grid 132, source electrode 1331, drain electrode 1332 and metal layer 20 etc. are aoxidized in order to prevent, active layer 131 and grid 132 it
Between the first oxide layer 14 can be set, the second oxide layer 15, active layer can be set between grid 132 and input and output layer 133
Third oxide layer 16 can be set between 131 and metal layer 20.Wherein, the first oxide layer 14, the second oxide layer 15 and third oxygen
The ingredient for changing layer 16 is identical or different.For example, the first oxide layer 14 can select TEOS as oxide layer, the second oxide layer 15
Can selecting silicon nitride (SiNx), third oxide layer 16 can be using selective oxidation silicon (SiOx) as oxide layer as oxide layer.
It, can be in the first oxygen in order to facilitate active layer 131 and source electrode 1331 and active layer 131 and the connection of drain electrode 1332
Change in the first structure that layer 14, the second oxide layer 15 and active layer 131 are formed, the first via 17 and the second via 18 are set, and
Source electrode 1331 is connected with the first via 17, drain electrode 1332 is connected with the second via 18, and active layer 131 is made to pass through the first via 17
It is connect with source electrode 1331, and active layer 131 is made to be connect by the second via 18 with drain electrode 1332.
Similarly, connect in order to facilitate vdd line 11 with metal layer 20, can in the first oxide layer 14, the second oxide layer 15, have
In the second structure that active layer 131 and third oxide layer 16 are formed, setting third via 19, and by vdd line 11 and third via 19
Connection, makes vdd line 11 be connect by third via 19 with metal layer 20.
During a specific implementation, in the AMOLED display screens of the embodiment of the present invention, the 4th is provided on substrate 12
Oxide layer 121, for example, the 4th oxide layer 121 can be fitted in substrate 12, metal layer 20 is fitted in the 4th oxide layer 121, the
Four oxide layers 121 can select SiOx as oxide layer.Wherein, the preferably good electric conductivity of metal layer 20, price is relatively
Low metal is formed, for example, metal layer 20 may be used but be not limited to copper powder or aluminium powder is formed, in the embodiment of the present invention,
Metal layer 20 is preferably formed using copper powder.
It should be noted that the metal layer in the embodiment of the present invention may be used in VDD reticular structures in the prior art
Conductive material is identical or the conductivity of the conductivity conductive material in VDD reticular structures than in the prior art is lower, this
Sample can ensure the metal layer to be formed resistance can VDD reticular structures than in the prior art resistance it is lower, could effectively drop
IR-drop on low vdd line.
The phenomenon that being interlocked due to latticed structure there are line and line, there is parasitic capacitance between line and line, and this
The AMOLED display screens of inventive embodiments, the metal layer 20 being bonded on the opposite position of substrate 12 are a planar structure, from
And it is effectively reduced the parasitic capacitance phenomenon between line and line.
It will be appreciated that though may oxygen be described using first, second, third, fourth grade of term in embodiments of the present invention
Change layer, but these oxide layers should not necessarily be limited by these terms, these terms are only used for oxide layer being distinguished from each other out.Such as it is not taking off
In the case of from range of embodiment of the invention, the first oxide layer 14 can also be referred to as the second oxide layer 15, third oxide layer 16
Either similarly the second oxide layer 15,16 or the 4th oxide layer 121 of third oxide layer can also be referred to as the 4th oxide layer 121
First oxide layer 14.
In the AMOLED display screens for making the embodiment of the present invention, metal layer 20 can be laid in the whole face of substrate 12, so
TFT layer 13 is set again afterwards, open up each via and the 5th oxide layer 21 is set after the input and output layer 133 of TFT layer 13,
TFT layer 13 is finally connected and utilized third via 19 by vdd line 11 and metal using the first via 17, the second via 18
Layer 20 connects, and reduces the space for occupying AMOLED display screens so as to reach, reduces the parasitic capacitance phenomenon between line and line, reduce
The purpose of IR-drop caused by vdd line 11.
The embodiment of the present invention additionally provides a kind of display device, which can include such as Fig. 2 or shown in Fig. 3
AMOLED display screens.
Wherein, the display device can be mobile phone, tablet computer, television set, display, laptop, Digital Frame,
Any product or component with display function such as navigator.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that：It still may be used
To modify to the technical solution recorded in foregoing embodiments or carry out equivalent replacement to which part technical characteristic；
And these modification or replace, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of active matrix organic light-emitting diode AMOLED display screens, which is characterized in that believe including metal layer, driving voltage
Number vdd line and substrate；
The metal layer is oppositely arranged with the substrate, and is bonded on the substrate；
The vdd line is connect with the metal layer, and the vdd line is made to form shunt circuit with the metal layer.
2. AMOLED display screens according to claim 1, which is characterized in that further include thin film transistor (TFT) TFT layer；
The TFT layer includes active layer, grid and input and output layer, and the input and output layer includes source electrode and drain electrode；
The active layer connects, and be oppositely arranged with the metal layer respectively with the source electrode and the drain electrode；
The grid is oppositely arranged with the active layer, and is connected to the control terminal of external control circuit.
3. AMOLED display screens according to claim 2, which is characterized in that set between the active layer and the grid
First oxide layer sets the second oxide layer between the grid and the input and output layer.
4. AMOLED display screens according to claim 3, which is characterized in that in first oxide layer, second oxygen
Change in the first structure that layer and the active layer are formed, the first via and the second via are set；
The active layer is connect by first via with the source electrode, the active layer by second via with it is described
Drain electrode connection.
5. AMOLED display screens according to claim 4, which is characterized in that set between the active layer and the metal layer
Put third oxide layer.
6. AMOLED display screens according to claim 5, which is characterized in that in first oxide layer, second oxygen
Change in the second structure that layer, the active layer and the third oxide layer are formed, third via is set；
The vdd line is connect by the third via with the metal layer.
7. AMOLED display screens according to claim 6, which is characterized in that first oxide layer, second oxidation
Layer is identical or different with the ingredient of the third oxide layer.
8. according to any AMOLED display screens of claim 1-7, which is characterized in that the metal layer using copper powder or
Aluminium powder is formed.
9. according to any AMOLED display screens of claim 1-7, which is characterized in that described to be basically provided with the 4th oxygen
Change layer.
10. a kind of display device, which is characterized in that including the AMOLED display screens as described in any in claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710002199.5A CN108269826A (en) | 2017-01-03 | 2017-01-03 | Active matrix organic light-emitting diode display screen and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710002199.5A CN108269826A (en) | 2017-01-03 | 2017-01-03 | Active matrix organic light-emitting diode display screen and display device |
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| CN201710002199.5A Pending CN108269826A (en) | 2017-01-03 | 2017-01-03 | Active matrix organic light-emitting diode display screen and display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766269A (en) * | 2018-07-27 | 2018-11-06 | 祺虹电子科技（深圳）有限公司 | Translucent display substrate, transparent display screen and preparation method thereof |
| CN109360837A (en) * | 2018-09-20 | 2019-02-19 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display device |
| CN114613319A (en) * | 2022-03-23 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel structure of MLED backboard and display panel |
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| CN104809988A (en) * | 2015-05-18 | 2015-07-29 | 京东方科技集团股份有限公司 | OLED (Organic Light Emitting Diode) array substrate, display panel and display device |
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| JP2005215354A (en) * | 2004-01-29 | 2005-08-11 | Seiko Epson Corp | Organic electroluminescence device and electronic equipment |
| CN1874001A (en) * | 2005-05-28 | 2006-12-06 | 三星Sdi株式会社 | Flat panel display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108766269A (en) * | 2018-07-27 | 2018-11-06 | 祺虹电子科技（深圳）有限公司 | Translucent display substrate, transparent display screen and preparation method thereof |
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| CN114613319B (en) * | 2022-03-23 | 2023-11-28 | 深圳市华星光电半导体显示技术有限公司 | Pixel structure of MLED backplate and display panel |
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Application publication date: 20180710 |