CN108269740A - Wafer stripping apparatus and method based on laser water jet - Google Patents
Wafer stripping apparatus and method based on laser water jet Download PDFInfo
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- CN108269740A CN108269740A CN201611261712.4A CN201611261712A CN108269740A CN 108269740 A CN108269740 A CN 108269740A CN 201611261712 A CN201611261712 A CN 201611261712A CN 108269740 A CN108269740 A CN 108269740A
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 192
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000010521 absorption reaction Methods 0.000 claims abstract description 5
- 239000007921 spray Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 112
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000011946 reduction process Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a kind of wafer stripping apparatus and method based on laser water jet, including：Electrostatic chuck treats thinned wafer suitable for absorption；Water tank, positioned at electrostatic chuck side；Water tank is equipped with through-hole adjacent to the side wall of electrostatic chuck, and the water in water tank forms the water jet that directive treats thinned wafer via through-hole；Side wall of the water tank far from electrostatic chuck is equipped with the first lens through water tank side wall；Laser beam emitting device, positioned at water tank far from electrostatic chuck side；Laser beam emitting device is suitable for emission level laser beam；Second lens, between water tank and laser beam emitting device；Second lens and the first lens are suitable for converging at the horizontal laser beam level that laser beam emitting device emits in water jet, and be thinned to treat thinned wafer to the edge for treating thinned wafer together with water jet.The wafer stripping apparatus based on laser water jet of the present invention is treated thinned wafer by using laser beam and is thinned, it is easy to operate, be thinned speed, take it is shorter, more efficient.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of wafer stripping apparatus based on laser water jet and
Method.
Background technology
In existing semiconductor technology, it is a kind of common technique that wafer, which is thinned, existing general using CMP (chemical machineries
Polishing) wafer is thinned in technique.It is generally required when carrying out reduction processing to wafer using CMP process by below scheme：
First wafer is roughly ground, wafer is subjected to fine grinding again, then carries out stress release, finally also to carry out dry method, wet etching.
There are the following problems for existing wafer reduction process：It is bad that 1. effect is thinned in crystal round fringes；2. processing step is cumbersome, for SiC,
Time sapphire or GaN required when the larger wafer of hardness be thinned is longer.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of crystalline substances based on laser water jet
Circle stripping apparatus and method is thinned that effect is bad to ask for solving crystal round fringes existing for wafer reduction process in the prior art
Topic and reduction process complex steps, for SiC, sapphire or the GaN time required when the larger wafer of hardness is thinned
The problem of longer.
In order to achieve the above objects and other related objects, a kind of wafer based on laser water jet of present invention offer, which is thinned, sets
Standby, the wafer stripping apparatus based on laser water jet includes：
Electrostatic chuck treats thinned wafer suitable for absorption；
Water tank has spacing positioned at the electrostatic chuck side, and with the electrostatic chuck；The water tank is adjacent to described quiet
The side wall of electric sucker is equipped with through-hole, and the water in the water tank forms the water-jet that thinned wafer is treated described in directive via the through-hole
Stream；Side wall of the water tank far from the electrostatic chuck is equipped with the first lens through the water tank side wall, and described first thoroughly
Mirror is correspondingly arranged with the through-hole；
Laser beam emitting device positioned at the water tank far from the electrostatic chuck side, and has spacing with the water tank；Institute
Laser beam emitting device is stated suitable for emission level laser beam；
Second lens are sent out between the water tank and the laser beam emitting device, and with the water tank and the laser
Injection device is respectively provided with spacing；Second lens are used cooperatively with first lens, suitable for the laser beam emitting device is sent out
The horizontal laser beam level penetrated is converged in the water jet, and to the edge for treating thinned wafer together with the water jet
To treat that thinned wafer is thinned to described.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, the electrostatic chuck packet
Include radio-frequency electrode.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, the width of the through-hole
It it is highly 20 μm~100 μm for 3cm~30cm.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, the Laser emission dress
The wavelength for putting the horizontal laser beam of transmitting is 500nm~600nm, maximum power 300W；The horizontal laser beam swashs for pulse
Light beam, the time of each pulse persistance is 150ns~400ns.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, the water jet apply
In the pressure for treating thinned wafer be 250Mpa~350Mpa.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, it is described to be based on laser water
The wafer stripping apparatus of jet stream further includes water pump, and the water pump is suitable for the water filling into the water tank.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, the pressure of the water pump
For 5Mpa~50Mpa, the water flow velocity of the pump outlet is 0.5L/min~10L/min.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, it is described to be based on laser water
The wafer stripping apparatus of jet stream further includes driving device, and the driving device is connected with the electrostatic chuck, suitable for driving institute
It states electrostatic chuck and described treats that thinned wafer moves up and down and/or rotary motion to drive.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, it is described to be based on laser water
The wafer stripping apparatus of jet stream further includes thickness arrangement for detecting, suitable for treating the thickness of thinned wafer described in detecting real-time.
A kind of preferred embodiment of the wafer stripping apparatus based on laser water jet as the present invention, it is described to be based on laser water
The wafer stripping apparatus of jet stream further includes control device, the control device and the laser beam emitting device, the water pump, described
Driving device and the thickness arrangement for detecting are connected, suitable for detected according to the thickness arrangement for detecting fructufy when adjust institute
The parameter of horizontal laser beam, the parameter of the water pump and the driving device for stating laser beam emitting device transmitting inhale the electrostatic
The driving of disk.
The present invention also provides a kind of wafer thining method based on laser water jet, the wafers based on laser water jet
Thining method includes the following steps：
1) it will treat that thinned wafer is adsorbed on electrostatic chuck；
2) to it is described treat thinned wafer spray water jet while, using laser beam emitting device to it is described treat thinned wafer send out
Horizontal laser beam is penetrated, and is converged at the horizontal laser beam level in the water jet using lens, with the water jet one
It rises to described and treats the edge of thinned wafer to treat that thinned wafer is thinned to described.
A kind of preferred embodiment of the wafer thining method based on laser water jet as the present invention, it is described in step 2)
The wavelength of the horizontal laser beam of laser beam emitting device transmitting is 500nm~600nm, maximum power 300W；The horizontal laser light
Beam is pulse laser beam, and the time of each pulse persistance is 150ns~400ns.
A kind of preferred embodiment of the wafer thining method based on laser water jet as the present invention in step 2), uses
It is 250Mpa~350Mpa that the water jet, which is applied to the pressure for treating thinned wafer,.
A kind of preferred embodiment of the wafer thining method based on laser water jet as the present invention, in step 2), right
It is described to treat that thinned wafer is carried out during being thinned, it drives the electrostatic chuck using driving device and described waits that crystalline substance is thinned to drive
Circle moves up and down and/or rotary motion.
A kind of preferred embodiment of the wafer thining method based on laser water jet as the present invention, in step 2), to institute
State treat thinned wafer carry out be thinned while, use the thickness that thinned wafer is treated described in thickness arrangement for detecting detecting real-time.
A kind of preferred embodiment of the wafer thining method based on laser water jet as the present invention, in step 2), to institute
State treat thinned wafer carry out be thinned while, according to the thickness arrangement for detecting detecting as a result, being adjusted in real time using control device
Save the parameter of the horizontal laser beam of the laser beam emitting device transmitting, the water jet is applied to the pressure for treating thinned wafer
And driving of the driving device to the electrostatic chuck.
As described above, the wafer stripping apparatus and method based on laser water jet of the present invention, has the advantages that：
The wafer stripping apparatus based on laser water jet of the present invention is treated thinned wafer by using laser beam and is thinned, operation letter
List is thinned speed, is time-consuming shorter, more efficient, by setting thickness arrangement for detecting and control device can be more accurately
Control thickness thinning；Meanwhile wafer is thinned using water jet and laser beam cooperation, water jet can treat thinned wafer and quiet
Electric sucker cools down, and does not need to additional cooling device, in addition, water jet can also take away the pair that generation is thinned in time
Product causes to damage so as to avoid treating thinned wafer surface.
Description of the drawings
Fig. 1 is shown as the plan structure of the wafer stripping apparatus based on laser water jet provided in the embodiment of the present invention one
Schematic diagram.
Fig. 2 is shown as the facing structure of the wafer stripping apparatus based on laser water jet provided in the embodiment of the present invention one
Schematic diagram.
Fig. 3 is shown as the flow chart of the wafer thining method based on laser water jet provided in the embodiment of the present invention two.
Component label instructions
1 electrostatic chuck
2 water tanks
21 through-holes
3 first lens
4 horizontal laser beams
5 second lens
6 treat thinned wafer
7 water
71 water jets
8 thickness arrangement for detecting
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Fig.3.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout form may also be increasingly complex.
Embodiment one
It please refers to Fig.1 and Fig. 2, a kind of wafer stripping apparatus based on laser water jet of present invention offer is described based on sharp
The wafer stripping apparatus of light water jet includes：Electrostatic chuck 1, the electrostatic chuck 1 are suitable for absorption and treat thinned wafer 6；Water tank 2,
The water tank 2 is located at 1 side of electrostatic chuck, and has spacing with the electrostatic chuck 1；The water tank 2 is adjacent to described quiet
The side wall of electric sucker 1 is equipped with through-hole 21, and the water 7 in the water tank 2 forms via the through-hole 21 and treats thinned wafer 6 described in directive
Water jet 71；Side wall of the water tank 2 far from the electrostatic chuck 1 is equipped with the first lens through 2 side wall of water tank
3, first lens 3 are correspondingly arranged with the through-hole 21；Laser beam emitting device (not shown), the laser beam emitting device are located at
The water tank 2 has spacing far from 1 side of electrostatic chuck, and with the water tank 2；The laser beam emitting device is suitable for transmitting
Horizontal laser beam 4；Second lens 5, second lens 5 between the water tank 2 and the laser beam emitting device, and with institute
It states water tank 2 and the laser beam emitting device is respectively provided with spacing；Second lens 5 are used cooperatively with first lens 3, are suitable for
4 level of horizontal laser beam that the laser beam emitting device emits is converged in the water jet 71, and with the water jet 71
The edge of thinned wafer 6 is treated to treat that thinned wafer 6 is thinned to described to described together.The present invention based on laser water jet
The horizontal laser beam 4 that is emitted by using the laser beam emitting device of wafer stripping apparatus treat that thinned wafer 6 carries out to described
It is thinned, the equipment operation is simple, speed is thinned, is time-consuming shorter, more efficient；Meanwhile use the water jet 71 and institute
It states horizontal laser beam 4 and coordinates and treat that thinned wafer 6 is thinned to described, the water jet 71 can treat thinned wafer 6 to described
And the electrostatic chuck 1 cools down, and does not need to additional cooling device, in addition, the water jet 71 can also be in time
The by-product that generation is thinned is taken away, so as to avoid treating that 6 surface of thinned wafer causes to damage to described.
It should be noted that first lens 3 can also be the transparent window that any one transparent material is made, it is described
First lens 3 can be replaced by glass window, transparent crystal window or crystalline ceramics window.
As an example, the electrostatic chuck 1 further includes radio-frequency electrode (not shown), the radio-frequency electrode is adsorbed for generating
The electrostatic adsorption force for treating thinned wafer 6.
As an example, the size of the through-hole 21 can be set according to actual needs, it is preferable that in the present embodiment,
The width of the through-hole 21 is 3cm~30cm, is highly 20 μm~100 μm.
As an example, the wavelength of the horizontal laser beam of the laser beam emitting device transmitting is 500nm~600nm, maximum work
Rate is 300W；The horizontal laser beam 4 is pulse laser beam, and the time of each pulse persistance is 150ns~400ns.
As an example, the water jet 71 needs to treat that thinned wafer 6 applies enough pressure to described, it is preferable that this reality
It applies in example, it is 250Mpa~350Mpa that the water jet 71, which is applied to the pressure treated on thinned wafer 6,.
As an example, the wafer stripping apparatus based on laser water jet further includes water pump (not shown), the water pump
Suitable for the water filling into the water tank 2, and pass through and adjust pressure itself, the water flow velocity in exit is applied with adjusting the water jet 71
In the pressure treated on thinned wafer 6.
As an example, the pressure of the water pump is 5Mpa~50Mpa, the water flow velocity of the pump outlet is 0.5L/min
~10L/min.
As an example, the wafer stripping apparatus based on laser water jet further includes driving device (not shown), it is described
Driving device is connected with the electrostatic chuck 1, suitable for driving the electrostatic chuck 1 to treat 6 basis of thinned wafer described in drive
Actual needs move up and down, rotary motion or simultaneously move up and down and rotary motion.Due to the water jet 71 and horizontal remittance
Gather and fixed in the position of the laser beam for treating thinned wafer 6, can be adjusted by adjusting the position for treating thinned wafer 6 sharp
The different location for treating thinned wafer 6 is thinned in light beam, so that it is more preferable that uniformity is thinned.
As an example, the wafer stripping apparatus based on laser water jet further includes thickness arrangement for detecting 8, the thickness
Arrangement for detecting 8 is suitable for treating the thickness of thinned wafer 6 described in detecting real-time.
As an example, the wafer stripping apparatus based on laser water jet further includes control device (not shown), it is described
Control device is connected with the laser beam emitting device, the water pump, the driving device and the thickness arrangement for detecting 8, fits
The ginseng of the horizontal laser beam of the laser beam emitting device transmitting is adjusted when the fructufy detected according to the thickness arrangement for detecting 8
The parameter (pressure of the water pump, the water flow velocity in exit) of several, described water pump and the driving device are to the electrostatic chuck 1
Driving.
Embodiment two
Referring to Fig. 3, the present embodiment also provides a kind of wafer thining method based on laser water jet, it is described to be based on laser
The wafer thining method of water jet is described to be based on based on the wafer stripping apparatus based on laser water jet described in embodiment one
The wafer thining method of laser water jet includes the following steps：
1) it will treat that thinned wafer is adsorbed on electrostatic chuck；
2) to it is described treat thinned wafer spray water jet while, using laser beam emitting device to it is described treat thinned wafer send out
Horizontal laser beam is penetrated, and is converged at the horizontal laser beam level in the water jet using lens, with the water jet one
It rises to described and treats the edge of thinned wafer to treat that thinned wafer is thinned to described.
As an example, in step 2), the wavelength of the horizontal laser beam of the laser beam emitting device transmitting for 500nm~
600nm, maximum power 300W；The horizontal laser beam is pulse laser beam, time of each pulse persistance for 150ns~
400ns。
As an example, in step 2), using the water jet be applied to the pressure for treating thinned wafer for 250Mpa~
350Mpa。
As an example, in step 2), to it is described treat that thinned wafer is thinned during, driven using driving device
The electrostatic chuck described treats that thinned wafer moves up and down and/or rotary motion to drive.
As an example, in step 2), to it is described treat that thinned wafer is thinned while, it is real-time using thickness arrangement for detecting
The thickness of thinned wafer is treated described in detecting.
As an example, in step 2), to it is described treat that thinned wafer is thinned while, according to the thickness arrangement for detecting
Detecting as a result, adjusting the parameter of the horizontal laser beam of laser beam emitting device transmitting, the water in real time using control device
Jet stream treats the driving of the pressure and the driving device of thinned wafer to the electrostatic chuck described in being applied to.
The wafer thining method step based on laser water jet of the present invention is simple, be easily achieved, be thinned speed compared with
Soon, it is time-consuming shorter, more efficient, thickness thinning can be precisely controlled.
In conclusion the present invention provides a kind of wafer stripping apparatus and method based on laser water jet, it is described based on sharp
The wafer stripping apparatus of light water jet includes：Electrostatic chuck treats thinned wafer suitable for absorption；Water tank, positioned at the electrostatic chuck
Side, and there is spacing with the electrostatic chuck；The water tank is equipped with through-hole, the water tank adjacent to the side wall of the electrostatic chuck
In water formed via the through-hole water jet of thinned wafer treated described in directive；Side of the water tank far from the electrostatic chuck
Wall is equipped with the first lens through the water tank side wall, and first lens are correspondingly arranged with the through-hole；Laser emission fills
It puts, positioned at the water tank far from the electrostatic chuck side, and there is spacing with the water tank；The laser beam emitting device is suitable for
Emission level laser beam；Second lens, between the water tank and the laser beam emitting device, and with the water tank and described
Laser beam emitting device is respectively provided with spacing；Second lens are used cooperatively with first lens, suitable for by the Laser emission
The horizontal laser beam level of device transmitting is converged in the water jet, and treats thinned wafer to described together with the water jet
Edge to treat that thinned wafer is thinned to described.The present invention based on the wafer stripping apparatus of laser water jet by using
Laser beam is treated thinned wafer and is thinned, it is easy to operate, be thinned speed, take it is shorter, more efficient, pass through set it is thick
Degree arrangement for detecting and control device can precisely control thickness thinning；Meanwhile coordinated using water jet and laser beam to crystalline substance
Circle is thinned, and water jet can treat thinned wafer and electrostatic chuck cools down, and not need to additional cooling device, this
Outside, water jet can also take away the by-product that generation is thinned in time, cause to damage so as to avoid treating thinned wafer surface.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (16)
1. a kind of wafer stripping apparatus based on laser water jet, which is characterized in that including：
Electrostatic chuck treats thinned wafer suitable for absorption；
Water tank has spacing positioned at the electrostatic chuck side, and with the electrostatic chuck；The water tank is inhaled adjacent to the electrostatic
The side wall of disk is equipped with through-hole, and the water in the water tank forms the water jet that thinned wafer is treated described in directive via the through-hole；Institute
It states side wall of the water tank far from the electrostatic chuck and is equipped with the first lens for running through the water tank side wall, first lens and institute
Through-hole is stated to be correspondingly arranged；
Laser beam emitting device positioned at the water tank far from the electrostatic chuck side, and has spacing with the water tank；It is described to swash
Light emitting devices is suitable for emission level laser beam；
Second lens fill between the water tank and the laser beam emitting device, and with the water tank and the Laser emission
It puts and is respectively provided with spacing；Second lens are used cooperatively with first lens, suitable for emit the laser beam emitting device
Horizontal laser beam level is converged in the water jet, and treats the edge of thinned wafer with right to described together with the water jet
It is described to treat that thinned wafer is thinned.
2. the wafer stripping apparatus according to claim 1 based on laser water jet, it is characterised in that：The electrostatic chuck
Including radio-frequency electrode.
3. the wafer stripping apparatus according to claim 1 based on laser water jet, it is characterised in that：The width of the through-hole
It spends for 3cm~30cm, is highly 20 μm~100 μm.
4. the wafer stripping apparatus according to claim 1 based on laser water jet, it is characterised in that：The Laser emission
The wavelength of the horizontal laser beam of device transmitting is 500nm~600nm, maximum power 300W；The horizontal laser beam is pulse
Laser beam, the time of each pulse persistance is 150ns~400ns.
5. the wafer stripping apparatus according to claim 1 based on laser water jet, it is characterised in that：The water jet is applied
It is 250Mpa~350Mpa to be added on the pressure for treating thinned wafer.
6. the wafer stripping apparatus according to claim 1 based on laser water jet, it is characterised in that：It is described to be based on laser
The wafer stripping apparatus of water jet further includes water pump, and the water pump is suitable for the water filling into the water tank.
7. the wafer stripping apparatus according to claim 6 based on laser water jet, it is characterised in that：The pressure of the water pump
Power is 5Mpa~50Mpa, and the water flow velocity of the pump outlet is 0.5L/min~10L/min.
8. the wafer stripping apparatus according to claim 5 or 6 based on laser water jet, it is characterised in that：It is described to be based on
The wafer stripping apparatus of laser water jet further includes driving device, and the driving device is connected with the electrostatic chuck, is suitable for
It drives the electrostatic chuck and described treats that thinned wafer moves up and down and/or rotary motion to drive.
9. the wafer stripping apparatus according to claim 8 based on laser water jet, it is characterised in that：It is described to be based on laser
The wafer stripping apparatus of water jet further includes thickness arrangement for detecting, suitable for treating the thickness of thinned wafer described in detecting real-time.
10. the wafer stripping apparatus according to claim 9 based on laser water jet, it is characterised in that：It is described to be based on swashing
The wafer stripping apparatus of light water jet further includes control device, the control device and the laser beam emitting device, the water pump,
The driving device and the thickness arrangement for detecting are connected, suitable for detected according to the thickness arrangement for detecting fructufy when tune
The parameter of horizontal laser beam, the parameter of the water pump and the driving device of the laser beam emitting device transmitting are saved to described quiet
The driving of electric sucker.
11. a kind of wafer thining method based on laser water jet, which is characterized in that include the following steps：
1) it will treat that thinned wafer is adsorbed on electrostatic chuck；
2) to it is described treat thinned wafer spray water jet while, using laser beam emitting device to it is described treat thinned wafer emit water
Flat laser beam, and converged at the horizontal laser beam level in the water jet using lens, together with the water jet extremely
The edge for treating thinned wafer to described to treat that thinned wafer is thinned.
12. the wafer thining method according to claim 11 based on laser water jet, it is characterised in that：In step 2),
The wavelength of the horizontal laser beam of the laser beam emitting device transmitting is 500nm~600nm, maximum power 300W；The level
Laser beam is pulse laser beam, and the time of each pulse persistance is 150ns~400ns.
13. the wafer thining method according to claim 11 based on laser water jet, it is characterised in that：In step 2),
It is 250Mpa~350Mpa to be applied to the pressure for treating thinned wafer using the water jet.
14. the wafer thining method according to claim 11 based on laser water jet, it is characterised in that：In step 2),
To it is described treat that thinned wafer is thinned during, drive the electrostatic chuck using driving device and described wait to subtract to drive
Thin wafer moves up and down and/or rotary motion.
15. the wafer thining method according to claim 14 based on laser water jet, it is characterised in that：In step 2),
To it is described treat that thinned wafer is thinned while, use the thickness that thinned wafer is treated described in thickness arrangement for detecting detecting real-time.
16. the wafer thining method according to claim 15 based on laser water jet, it is characterised in that：In step 2),
To it is described treat that thinned wafer is thinned while, according to thickness arrangement for detecting detecting as a result, using control device real
When adjust the parameter of horizontal laser beam of laser beam emitting device transmitting, the water jet is applied to and described treats thinned wafer
The driving of pressure and the driving device to the electrostatic chuck.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611261712.4A CN108269740A (en) | 2016-12-30 | 2016-12-30 | Wafer stripping apparatus and method based on laser water jet |
| TW106124970A TWI663675B (en) | 2016-12-30 | 2017-07-25 | Wafer thinning equipment and operating method thereof based on laser water jet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611261712.4A CN108269740A (en) | 2016-12-30 | 2016-12-30 | Wafer stripping apparatus and method based on laser water jet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108269740A true CN108269740A (en) | 2018-07-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611261712.4A Pending CN108269740A (en) | 2016-12-30 | 2016-12-30 | Wafer stripping apparatus and method based on laser water jet |
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| CN (1) | CN108269740A (en) |
| TW (1) | TWI663675B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150170967A1 (en) * | 2012-08-23 | 2015-06-18 | Michael Xiaoxuan Yang | Methods for Substrate and Device Fabrications |
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|---|---|---|---|---|
| JP6161188B2 (en) * | 2013-02-05 | 2017-07-12 | 株式会社ブイ・テクノロジー | Laser processing apparatus and laser processing method |
| WO2016122821A2 (en) * | 2015-01-29 | 2016-08-04 | Imra America, Inc. | Laser-based modification of transparent materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150170967A1 (en) * | 2012-08-23 | 2015-06-18 | Michael Xiaoxuan Yang | Methods for Substrate and Device Fabrications |
Non-Patent Citations (2)
| Title |
|---|
| MATHILDE GOBET,ETAL.: "Implementation of Short-Pulse Lasers for Wafer Scribing and Grooving Applications", 《JLMN-JOURNAL OF LASER MICRO/NANOENGINEERING》 * |
| TUAN ANH MAI，ETAL.: "The Laser MicroJet® (LMJ) - A Multi-Solution Technology", 《PROC. OF SPIE》 * |
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| Publication number | Publication date |
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| TW201838059A (en) | 2018-10-16 |
| TWI663675B (en) | 2019-06-21 |
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