CN108267078A - A kind of flexible wearable resistance strain and preparation method thereof - Google Patents
A kind of flexible wearable resistance strain and preparation method thereof Download PDFInfo
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- CN108267078A CN108267078A CN201810221727.0A CN201810221727A CN108267078A CN 108267078 A CN108267078 A CN 108267078A CN 201810221727 A CN201810221727 A CN 201810221727A CN 108267078 A CN108267078 A CN 108267078A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/103—Detecting, measuring or recording devices for testing the shape, pattern, colour, size or movement of the body or parts thereof, for diagnostic purposes
- A61B5/11—Measuring movement of the entire body or parts thereof, e.g. head or hand tremor, mobility of a limb
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Abstract
The invention discloses a kind of flexible wearable resistance strain and preparation method thereof, resistance strain includes flexible substrates, sensing layer, electrode layer and protective layer.The wearable resistance strain of the present invention is for other same type sensors, have the characteristics that prepared by rapid large-area, stability is good, high sensitivity, easy to operate, it can be worn on the skin surface of human body, have broad application prospects in terms of human motion detection, intelligent medical service etc..
Description
Technical field
The present invention relates to physiology, mobile monitoring fields, and in particular to a kind of flexible wearable resistance strain and
Preparation method.
Background technology
With the development of the social economy, the raising of living standards of the people, health problem are increasingly valued by people.It passes
The medical monitoring device of system is complicated, of high cost, detection time is long, it is also possible to bring many pains to patient and be examined to doctor
It is disconnected to make troubles, have been unable to meet requirement of the people for health care.In real time, accurately detection human body respectively to health indicator,
And data analysis is carried out to indices and makes the trend that best health care plans are future development in time.
Wearable strain transducer plays very important effect in the real-time monitoring of health index, for example,
When no fitness accompanies lower progress outdoor sports, the excessive pulled muscle for being likely to result in sporter of amount of exercise, joint
Abrasion, digestive system operation are abnormal etc., so as to generate totally unfavorable influence to health；And amount of exercise is too small, is not achieved
The effect of exercise, thus monitored in real time by wearable sensors in motion process and according to monitoring result adjust run duration,
Intensity and frequency can be only achieved the purpose of health exercising.Heart rate and pulse frequency are one of important physiology physical sign parameters of human body,
It is carried out to monitor in real time, useful physiological health information is provided for user, by the health evaluating of user and disease (such as
Disease of cardiovascular system) primary prevention have important value；In addition to body sounds, breathing and each position because causing during lesion
The real-time monitoring of nerve bounce also there is earthshaking meaning in medical treatment.In conclusion wearable strain transducer
In medical treatment ＆ health field, great application potential is shown.
Flexible strain with micro-nano size crack structtire passes device, because its signal acquisition simple in structure easily in recent years by
The extensive concern of people, composition include：Flexible substrates and the flexible strain sensor film that is set in the flexible substrates with
And it is set to the conducting wire at flexible strain sensor film both ends.Its operation principle is：It is strained in flexibility and processes tool on sensing conductive film
There is the crackle of specific micro-nano size, when being detected, the geometric parameters of crack structtire on external mechanical signal induction sensor film
Number changes so as to cause the variation of resistance, and the conducting wire output for passing through both ends is corresponding electric signal.
(the Ultrasensitive mechanical crack-based sensor such as Kahp-Yang Suh in 2014
Inspired by the spider sensory system.2014,516:222-226)；Yue.Zhang in 2015 etc.
(Flexible and Highly Sensitive Strain Sensors Fabricated by Pencil Drawn for
Wearable Monitor.2015,25：2395–2401)；(the Parallel such as Morteza Amjadi in 2015
Microcracks-based Ultrasensitive and Highly Stretchable Strain Sensors.2015,
8:5168-5626)；(the Dramatically Enhanced Mechanosensitivity and such as Taeil Kim in 2016
Signal-to-Noise Ratio of Nanoscale Crack-Based Sensors:Effect of Crack
Depth.2016,28：8130-8137) etc. computer MSR Information systems develop more moneys and are based on nanoscale crack structtire in succession has superelevation
The flexible strain of sensitivity passes device, can be good at realizing the features such as speech recognition, pulse detection.However above-mentioned strain transducer
Although possessing the crack structtire of micro/nano-scale, the geometric parameter (length, depth and width) of crackle cannot carry out controllably adding
Work, and the geometric parameter of crackle finally decides the sensitivity and stability of sensor, this just necessarily leads to different sensors
The sensitivity of body is different.In addition, it due to the difference of micron order crack structtire size and arranges disorderly and unsystematic in use
So that stability, service life that the type passes device substantially reduce.New processing technology is taken, by spontaneous, irregular crackle
Structure is changed into the crack structtire of controllable precise, is to realize so as to improve its stability while sensor sensitivity is ensured
The inevitable approach that the type sensor can promote and apply
Invention content
The present invention provides a kind of flexible wearable with micro-nano size crack structtire based on conventional lithography process manufacture
Strain transducer and preparation method thereof, preparation process is simple, can form aligned orderly, and the crackle array that size is controllable.
A kind of flexible wearable resistance strain of the present invention, including：
Barrier layer is formed in the region that measurement is touched on skin；
Sensing layer, including structure sheaf and sensitive layer, structure sheaf is formed in the upper surface of barrier layer, and sensitive layer is formed in structure
The upper surface of layer；
Electrode layer, the electrode drawn including two from the surface of sensitive layer；
Protective layer, protective layer are located at the top of electrode layer.
Wherein, the preparation process of the structure sheaf is in addition to longer developing time is needed, the photoetching of other steps and standard
Technique is similar, and principle is：Due to exposure uneven so that photoresist occur in a thickness direction thin but stiff elastic layer and
Viscoelastic layer below elastic layer, when isotropism expansion occurs in developer solution in viscoelastic layer, it will so that elasticity
The stress intensity factor of layer is more than easily its fracture toughness, is cracked so as to cause elastic layer.In a photolithographic process, ultraviolet exposure
Light causes photoresist to form viscoelastic layer close to the position of silicon base in a thickness direction, and in the upper surface shape far from silicon base
Into thin but stiff elastic layer；Mask plate causes photoresist side to form specific stress concentration structure (sharp nick shaped), separately
Side forms strain relief (arc-shaped)；In developing process, viscoelastic layer goes out due to the solute molecule in absorbent solution
Existing isotropism expansion so that elastic layer, which generates, is more than each to same tropism tensile stress of self structure intensity, and finally lead
Fracturing line from stress raiser (sharp notch side), spread by stress release (circular arc side).During reasonable Control experiment
Relevant parameter can control germinating, extension, termination and the geometric dimension (length and width, depth etc.) of crackle.
The barrier layer material is thin for polyethylene terephthalate (PET) film or dimethyl siloxane (PDMS)
Film, thickness are 15-20 μm.
The structure sheaf is dimethyl siloxane (PDMS) the film knot with crack structtire obtained by template
Structure, thickness are 11-18 μm, and the width of its face crack is 0.5 μm -3 μm in a free state, crack depth 50nm-
The distance between 300nm, crackle is 70 μm -80 μm, crack length 1-2mm.
The sensitive layer material be Pt, sensitive layer thickness be 20nm-100nm, its face crack under no detection state
The dimensional parameters of dimensional parameters and structure sheaf are essentially identical.Pt is platinum nano particle, uniform by the method for physical deposition
Flexible layer surface is deposited on as conductive layer.
The electrode is copper foil or enameled wire.
The protective layer is cured PET film or PDMS film.
It is a further object of the present invention to provide a kind of preparation method of flexible wearable resistance strain, packets
It includes：The preparation of flexible sensor structure sheaf and the preparation of flexible wearable resistance sensor：
The preparation of flexible wearable resistance sensor includes the following steps：
S1, by PDMS spin coatings on a silicon substrate, it is 15-20 μm of barrier layer to obtain thickness；
S2, preparation structure layer, and structure sheaf is placed on the barrier layer described in step S1, after cured with barrier layer one
It is same to peel off from the substrate；
S3, one layer of Pt is deposited on structure sheaf as sensitive material by the use of the method for sputtering sedimentation, it is curved with smaller radian
Bent structure sheaf, so as to which sensitive material be induced to generate the crackle that there is same widths and length with structure sheaf；
S4, at least two strip electrodes, sensitive material described in the end thereof contacts of electrode are drawn, the other end leans out the sensitive material
The bed of material；
S5, one layer of flexible macromolecule polymer is applied as protective layer in the sensitive material layer surface, it is sensitive to form covering
Material layer, and the sensor layer and electrode layer are wrapped up jointly with the barrier layer；
The preparation of flexible sensor structure sheaf includes the following steps：
S2.1, SU-8 bear photoresist and are uniformly applied on a silicon substrate by spin-coating method；
S2.2, the mask plate with stress concentration structure and strain relief is placed on SU-8 photoresists and with one
Surely amount is exposed, soft baking on baking oven after exposure；
S2.3, for obtain with specific dimensions crackle, by the sample after above-mentioned exposure develop in developer solution one section when
Between after, and repeat step S2.2；
S2.4, above-mentioned sample is developed in developer solution, constant temperature, which dries, after being taken out from developing solution obtains with crackle
Pattern master；
S2.5, by ultraviolet-curable materials urethane acrylate (PUA) drop coating on above-mentioned motherboard, it is clean using one piece
PET base is stamped on material, is then placed under ultraviolet light and is cured with certain energy, and the coining glue of replicated architecture is consolidated
It is adhered on PET after change, is stripped down from motherboard together；
S2.6, by dimethyl silicone polymer (PDMS) drop coating on above-mentioned urethane acrylate (PUA), shell after cured
From obtain with motherboard have identical crack structtire structure sheaf.
The present invention has the advantages that：
1st, for other resistance-types strain and pass device, structure sheaf and sensitive layer crack structtire geometric parameter are controllable, from
And it ensure that the sensitivity and stability of sensor；
2nd, inventive sensor can process the crack structtire with specific length according to different working condition requirements, from
And sensor is caused to meet different detection ranges；
3rd, inventive sensor has large area preparation, simple operation and other advantages.
Description of the drawings
Fig. 1 is the structure diagram of flexible wearable resistance strain of the present invention.
Fig. 2 is flexible wearable resistance strain sensing layer structure diagram of the present invention.
Fig. 3 is material in a thickness direction after mask plate structure feature used and photoresist exposure in structure sheaf preparation process
Mechanical property distribution schematic diagram.
Fig. 4 is crackle formation mechenism schematic diagram in developing process.
In figure：1-barrier layer, 2-sensing layer, 3-electrode layer, 4-protective layer, 5-structure sheaf, 6-sensitive layer.
Specific embodiment
As depicted in figs. 1 and 2, a kind of flexible wearable resistance strain, including
Barrier layer 1,
Sensing layer 2, sensing layer 2 include micro nano structure layer 5 and sensitive layer 6, and wherein structure sheaf 5 is formed in barrier layer 1
Upper surface, sensitive layer 6 are formed in the upper surface of structure sheaf 5；
Electrode layer 3, the electrode drawn including two from the surface of sensitive layer 6；
Protective layer 4, protective layer are located at the top of electrode layer.
It is the preparation of structure sheaf 5 first, template used structure and crackle formation basic theory are as shown in Figure 3, Figure 4：
(1), SU-8 bears photoresist and is uniformly applied by spin-coating method on a silicon substrate, and thickness is 15 μm, and in 90 DEG C of baking
Soft baking 3 minutes on case；
(2), by the mask plate with stress concentration structure and strain relief on SU-8 photoresists and with about 125mJ
cm-2Light exposure be exposed, after exposure on 90 DEG C of baking oven soft baking 3 minutes, at this time since illumination is not on thickness direction
Uniformly, so as to which there are tension gradients on photoresist thickness direction, i.e., it is elastic layer close to upper surface, is viscous below elastic layer
Elastic layer, as shown in Figure 3；The stress concentration structure is isosceles acute triangle, and the strain relief is semicircle
Arc, the structure of mask plate are as shown in Figure 1.
(3), above-mentioned sample is developed 50min in developer solution, since sample is expanded in night of developing so that elastic layer shape
Into crackle, as shown in figure 4, constant temperature dries and obtains the motherboard with crack pattern after being taken out from solution；
(4), by ultraviolet-curable materials urethane acrylate (PUA) drop coating on above-mentioned motherboard, thickness is 15 μm, is utilized
One piece of clean PET base is stamped on material, is then placed under ultraviolet light and is cured 40min, a length of 365nm of light wave, power
For 100mJ/cm2, it is adhered on PET after the coining adhesive curing of replicated architecture, is stripped down from silicon template together；
(5), by dimethyl silicone polymer (PDMS) drop coating, thickness is 20 μm on above-mentioned urethane acrylate (PUA),
Stripping obtains the structure sheaf 5 for having identical crackle with template after cured.
On the basis of structure sheaf 5 prepares completion, the preparation of flexible wearable resistance sensor is carried out：
S1, by dimethyl siloxane (PDMS) spin coating on a silicon substrate, it is 15 μm of barrier layer 1 to obtain thickness；
S2, by the structure stratification and PDMS (barrier layer) that have prepared, after cured with barrier layer 1 together from substrate
It strips down；
S3, with 10 degree of bending curvature structure sheaf 5, and deposited on structure sheaf with the method for sputtering sedimentation under this radian
The Pt of 20nm thickness is as sensitive material 6, and sensitive material 6 generates the crack structtire with 5 identical size of structure sheaf, such as Fig. 2 institutes
Show；
S4, two enamel-cover line electrodes 3 are drawn, sensitive material 6 described in the end thereof contacts of electrode, the other end leans out described quick
Feel material layer 6；
S5, in the 6 surface spin coating of sensitive material, one layer of PDMS, formed and cover the sensitive material 6, and with it is described
Barrier layer 1 wraps up the sensing layer 2 jointly.
Claims (7)
1. a kind of flexible wearable resistance strain, it is characterised in that：Including：
Barrier layer is formed in the region that measurement is touched on skin；
Sensing layer, including structure sheaf and sensitive layer, structure sheaf is formed in the upper surface of barrier layer, and sensitive layer is formed in structure sheaf
Upper surface；
Electrode layer, the electrode drawn including two from the surface of sensitive layer；
Protective layer, protective layer are located at the top of electrode layer.
2. a kind of flexible wearable resistance strain according to claim 1, it is characterised in that：The barrier
Layer material is pet film or dimethyl siloxane film, and thickness is 15-20 μm.
3. a kind of flexible wearable resistance strain according to claim 1, it is characterised in that：The structure
For layer for the dimethyl siloxane membrane structure with crack structtire, thickness is 11-18 μm, in a free state its face crack
Width is 0.5 μm -3 μm, crack depth 50nm-300nm, and the distance between crackle is 70 μm -80 μm, crack length 1-
2mm。
4. a kind of flexible wearable resistance strain according to claim 1, it is characterised in that：The sensitivity
Layer material is Pt, and sensitive layer thickness is 20nm-100nm, its face crack dimensional parameters and structure sheaf under no detection state
Dimensional parameters are identical.
5. a kind of flexible wearable resistance strain according to claim 1, it is characterised in that：The electrode is
Copper foil or enameled wire.
6. a kind of flexible wearable resistance strain according to claim 1, it is characterised in that：The protective layer
For cured PET film or PDMS film.
7. a kind of flexible wearable resistance strain preparation method described in claim 1, it is characterised in that：Including soft
The property preparation of sensor structure layer and the preparation of flexible wearable resistance sensor：
The preparation of flexible wearable resistance sensor includes the following steps：
S1, by PDMS spin coatings on a silicon substrate, it is 15-20 μm of barrier layer to obtain thickness；
S2, preparation structure layer, and structure sheaf is placed on the barrier layer described in step S1, after cured with barrier layer together from
It is stripped down in substrate；
S3, one layer of Pt is deposited on structure sheaf as sensitive material by the use of the method for sputtering sedimentation, with smaller bending curvature knot
Structure layer, so as to which sensitive material be induced to generate the crackle that there is same widths and length with structure sheaf；
S4, at least two strip electrodes, sensitive material described in the end thereof contacts of electrode are drawn, the other end leans out the sensitive material
Layer；
S5, one layer of flexible macromolecule polymer is applied as protective layer in the sensitive material layer surface, form covering sensitive material
Layer, and the sensor layer and electrode layer are wrapped up jointly with the barrier layer；
The preparation of flexible sensor structure sheaf includes the following steps：
S2.1, SU-8 bear photoresist and are uniformly applied on a silicon substrate by spin-coating method；
S2.2, the mask plate with stress concentration structure and strain relief is placed on SU-8 photoresists and with one surely
Amount is exposed, soft baking on baking oven after exposure；
S2.3, to obtain the crackle with specific dimensions, the sample after above-mentioned exposure was developed in developer solution after a period of time,
And repeat step S2.2；
S2.4, above-mentioned sample is developed in developer solution, constant temperature, which dries, after being taken out from developing solution obtains with crack pattern
Motherboard；
S2.5, by ultraviolet-curable materials urethane acrylate drop coating on above-mentioned motherboard, utilize one piece of clean PET base pressure
It is imprinted on material, is then placed under ultraviolet light and is cured with certain energy, adhered to after the coining adhesive curing of replicated architecture
On PET, stripped down from motherboard together；
S2.6, by dimethyl silicone polymer drop coating on above-mentioned urethane acrylate, after cured stripping obtain and motherboard have
There is the structure sheaf of identical crack structtire.
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| CN109099832A (en) * | 2018-08-21 | 2018-12-28 | 华东理工大学 | Strain transducer and its manufacturing method |
| CN109199339A (en) * | 2018-09-12 | 2019-01-15 | 合肥工业大学 | A kind of wearable flexibility temperature sensor and preparation method thereof for monitoring body temperature |
| CN109855526A (en) * | 2019-02-28 | 2019-06-07 | 吉林大学 | A kind of resistance-type flexibility strain transducer and preparation method thereof based on dry mediation self assembly |
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| CN113510726B (en) * | 2021-07-13 | 2022-07-29 | 吉林大学 | Intelligent manipulator based on bionic rigid-flexible coupling multi-dimensional force perception |
| CN113510726A (en) * | 2021-07-13 | 2021-10-19 | 吉林大学 | Intelligent manipulator based on bionic rigid-flexible coupling multi-dimensional force perception |
| CN113551588A (en) * | 2021-07-27 | 2021-10-26 | 北方工业大学 | Resistance-type flexible carbon fiber strain sensor and manufacturing method thereof |
| CN113796854A (en) * | 2021-09-16 | 2021-12-17 | 吉林大学 | Bending strain sensor based on gold nanoparticles, preparation method and application |
| CN113883997A (en) * | 2021-09-24 | 2022-01-04 | 昆明理工大学 | Flexible resistance type strain sensor based on carbon fiber film microflakes |
| CN113883997B (en) * | 2021-09-24 | 2023-10-27 | 昆明理工大学 | Flexible resistance type strain sensor based on carbon fiber film microchip |
| CN113916417A (en) * | 2021-10-18 | 2022-01-11 | 天津科技大学 | Novel flexible stress sensor and preparation method thereof |
| CN113959605A (en) * | 2021-10-19 | 2022-01-21 | 广州碳思科技有限公司 | Stress sensor and stress sensing device |
| CN114440760A (en) * | 2022-01-26 | 2022-05-06 | 浙江大学 | Flexible tensile strain sensor |
| CN114440760B (en) * | 2022-01-26 | 2023-01-10 | 浙江大学 | Flexible tensile strain sensor |
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