CN108264014B - Metal array detection unit, preparation method thereof and detection conversion device - Google Patents

Metal array detection unit, preparation method thereof and detection conversion device Download PDF

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CN108264014B
CN108264014B CN201810044476.3A CN201810044476A CN108264014B CN 108264014 B CN108264014 B CN 108264014B CN 201810044476 A CN201810044476 A CN 201810044476A CN 108264014 B CN108264014 B CN 108264014B
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lambda
metal
metal square
detection
array structure
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CN108264014A (en
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张中月
陈旭浪
王明艳
赵文静
朱牧飞
孙永伟
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Shaanxi Normal University
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Shaanxi Normal University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
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  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The invention relates to a metal array detection unit, a preparation method thereof and a detection conversion device, wherein the detection conversion device comprises a rotating shaft, a plurality of detection units which are uniformly distributed along the circumferential direction of the rotating shaft, and a connecting rod for connecting the detection units and the rotating shaft, wherein the detection units comprise an external fixing frame, upper high-transmittance glass, lower high-transmittance glass and a metal square array structure plate; the invention also relates to a preparation method of the detection unit, and the detection unit generates different transmission spectral lines through the metal square array structure plates with the micro-nano structures at different included angles. The detection unit is driven to rotate through the rotation of the rotating shaft, so that the wavelengths corresponding to the transmission valley positions of a plurality of transmission spectral lines can be obtained, a plurality of logic conditions can be screened through the wavelengths corresponding to the transmission valley positions, a plurality of logic operations can be realized, the detection unit can be used as a logic switch, the operation is convenient, and the dynamic change adjustment can be realized.

Description

Metal array detection unit, preparation method thereof and detection conversion device
Technical Field
The invention belongs to the technical field of automatic control, and particularly relates to a metal array detection unit, a preparation method thereof and a detection conversion device.
Background
A logic switch (or called a pressure logic switch) is a control instrument widely used in an automatic control system. Logic switches are commonly used to measure the pressure or temperature of a fluid, such as a gas or liquid. When the pressure or temperature of the measured fluid is higher or lower than the rated value, the logic switch can correspondingly act to change the on-off state of the micro switch contained in the logic switch, thereby achieving the purpose of automatic control.
The existing logic switch is mainly designed in a mechanical mode, a circuit mode and a PN junction mode so as to judge the related rated value and make corresponding action.
Disclosure of Invention
The invention provides a metal array detection unit, a preparation method thereof and a detection conversion device. The technical problem to be solved by the invention is realized by the following technical scheme: a metal array detection unit comprises an external fixing frame, upper high-transmittance glass, lower high-transmittance glass and a metal square array structure plate; the metal square array structure plate is positioned between the upper high-transmittance glass and the lower high-transmittance glass, and the upper high-transmittance glass and the lower high-transmittance glass are fixed through an external fixing frame;
the length of a single metal square in the metal square array of the metal square array structure plate is 60-120 nm, and the width of the single metal square is 60 nm.
Furthermore, the metal square of the metal square array structure plate adopts metal gold, silver or copper.
A preparation method of a metal array detection unit comprises the following steps:
step 1, preparing a substrate: preparing an ITO glass substrate, cleaning and blow-drying;
step 2, coating photoresist: coating PMMA photoresist on the ITO glass substrate prepared in the step 1 by using a photoresist spinner, wherein the thickness of the photoresist is 270nm, the rotating speed of the photoresist spinner is 4000rpm, and the time is 60 s;
step 3, drying after gluing: placing the substrate coated with the PMMA photoresist in the step 2 on a hot plate for drying, wherein the drying temperature is 150 ℃, and the drying time is 3-15 min;
step 4, electron beam exposure of structural patterns: designing a graph of a metal square array structure of the metal square array structure plate by using a graph generator, and exposing the graph by using an electron beam to obtain an exposed substrate; during exposure, etching the PMMA photoresist of the pattern part of the metal square array structure by using an electron beam;
and step 5, developing: at normal temperature, placing the substrate exposed in the step 4 into a developing solution for soaking and developing, wherein the developing solution is prepared by matching tetramethylcyclopentanone and isopropanol in a volume ratio of 3:1, and the soaking and developing time is 60 s;
step 6, fixing: putting the substrate subjected to the soaking and developing in the step 5 into a fixing solution for soaking and fixing, taking the substrate out after the fixing is finished, and drying the substrate by using nitrogen for 60 s;
and 7, drying after fixing: putting the substrate which is soaked and fixed in the step 6 and dried in the air on a hot plate for drying; the drying temperature is 150 ℃, and the drying time is 3-15 min;
step 8, gold plating: putting the substrate dried after the fixing in the step 7 into an electron beam vacuum evaporation coating machine for gold plating, silver plating or copper plating, cooling for 10-20 min after evaporation, and taking out, wherein the thickness of the evaporated metal is 50 nm;
step 9, stripping the PMMA photoresist: soaking the substrate subjected to vacuum gold plating in the step 8 in acetone for at least 30min by using a lift-off process to dissolve the electron beam PMMA photoresist;
step 10, drying: drying the substrate stripped of the PMMA photoresist obtained in the step 9 by using a nitrogen gun to obtain a metal square array structural plate;
and 11, fixing the metal square array structure plate between upper high-transmittance glass and lower high-transmittance glass, and fixing the upper high-transmittance glass and the lower high-transmittance glass through an external fixing frame to prepare the detection unit.
And 12, repeating the steps 1 to 11 to prepare the metal square array structure plates with different metal square lengths, and preparing different detection units.
A metal array detection conversion device comprises a rotating shaft, a plurality of detection units and a connecting rod, wherein the detection units are uniformly distributed along the circumferential direction of the rotating shaft;
the detection unit comprises an external fixing frame, upper high-transmittance glass, lower high-transmittance glass and a metal square array structural plate; the metal square array structure plate is clamped between upper high-transmittance glass and lower high-transmittance glass, and the upper high-transmittance glass and the lower high-transmittance glass are fixed through an external fixing frame;
the length of a single metal square of the metal square array structure plate is 60-120 nm, and the width of the single metal square is 60 nm;
the sizes of the metal squares of the metal square array structure plate are the same, and the sizes of the metal squares of the metal square array structure plate of different detection units 4 are different.
Further, the number of the detection units 4 is four, and the detection units are symmetrically arranged in a cross shape.
Further, the wavelength corresponding to the transmission valley position of the visible light wave band transmission line of the metal square array structure plate 4-4 is λ, and when the length of the metal square is 60nm, the wavelength λ corresponding to the wavelength λ is λ1530nm, where the length of the metal square is 80nm corresponds to a wavelength λ2550nm, where the length of the metal square is 100nm, the corresponding wavelength λ is λ3580nm, when the length of the metal square is 120nm, the corresponding wavelength λ is λ4＝610nm；
When lambda ∈ (0, lambda)1]Executing a first logic operation A;
when lambda ∈ (lambda)1，λ2]Executing a second logic operation B;
when lambda ∈ (lambda)2，λ3]Executing a third logic operation C;
when lambda ∈ (lambda)3，λ4]Executing a fourth logic operation D;
when lambda is more than or equal to lambda4The fifth logic operation E is performed.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the metal square array structure plate with the micro-nano structure can generate transmission spectral lines, so that the wavelengths corresponding to the transmission valley positions of different transmission spectral lines can be obtained, and condition screening can be performed through the wavelengths corresponding to the transmission valley positions.
The detection unit is driven to rotate through the rotation of the rotating shaft, the detection unit converts incident light to generate transmission spectral lines with different effects, so that wavelengths corresponding to the transmission valley positions of a plurality of transmission spectral lines can be obtained, a plurality of logic conditions can be screened through the wavelengths corresponding to the transmission valley positions, a plurality of logic operations can be realized, the detection device can be used as a logic switch, the operation is convenient, and the dynamic change adjustment is facilitated.
Drawings
FIG. 1 is a schematic diagram of a single metal square array structure plate;
FIG. 2 is a schematic view of a detecting unit;
FIG. 3 is a schematic structural diagram of the detection conversion device;
FIG. 4 is a schematic structural diagram of a use state of the detection and conversion device;
FIG. 5 is a schematic view of the detection assembly;
FIG. 6 is a diagram showing the corresponding transmission lines when the length of the metal block in the metal block array structural plate is changed.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings, which are merely for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be construed as limiting the invention.
Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to a number of indicated technical features. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
The terms "mounted," "connected," and "coupled" are to be construed broadly and may, for example, be fixedly coupled, detachably coupled, or integrally coupled; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the creation of the present invention can be understood by those of ordinary skill in the art through specific situations.
Example 1:
as shown in fig. 1, the present embodiment provides a metal array detection unit, which includes an external fixing frame 4-1, a high-transmittance glass 4-2, a low-transmittance glass 4-3, and a metal square array structure plate 4-4; the metal square array structure plate 4-4 is positioned between the upper high-transmittance glass 4-2 and the lower high-transmittance glass 4-3, and the upper high-transmittance glass 4-2 and the lower high-transmittance glass 4-3 are fixed through an external fixing frame 4-1; the metal square in the metal square array of the metal square array structure plate 4-4 has a length of 60-120 nm and a width of 60 nm.
As shown in fig. 2, when the metal block length L of the metal block array structure plate 4-4 is 60nm, the width W is 60nm, and the width W is not changed, only the length L of the metal block is changed, transmission lines with different effects are generated, and as shown in fig. 6, transmission lines corresponding to visible light bands are generated when the length of the metal block is changed from 60nm to 80nm, 100nm, and 120nm, respectively. The lambda is defined to represent the wavelength corresponding to the position of the transmission valley in the transmission spectral line, different transmission valleys are generated if the lengths L of the metal squares are different, and the wavelength corresponding to the transmission valleys is different, so that a plurality of different conditions can be screened.
Further, the metal squares of the metal square array structure plate 4-4 are made of metal gold, silver or copper, and metal gold is used as a specific implementation manner in this embodiment and the following embodiments.
Example 2:
the embodiment provides a preparation method of a metal array detection unit, which comprises the following steps:
step 1, cleaning: preparing ITO glass as a substrate, putting the ITO glass into a washing solution for washing, performing ultrasonic treatment on the ITO glass for 15min by using deionized water, performing ultrasonic treatment on the ITO glass for 15min by using acetone, performing ultrasonic treatment on the ITO glass for 15min by using alcohol, performing ultrasonic treatment on the ITO glass for 5min by using deionized water, and finally drying the ITO glass by using a nitrogen gun and putting the ITO glass into a nitrogen cabinet for later use.
Step 2, coating photoresist: coating PMMA photoresist on the ITO glass substrate prepared in the step 1 by using a photoresist spinner, wherein the thickness of the photoresist is 270nm, the rotating speed of the photoresist spinner is 4000rpm, and the time is 60 s;
step 3, drying after gluing: and (3) drying the substrate coated with the PMMA photoresist in the step (2) on a hot plate at the temperature of 150 ℃ for 3-15 min, wherein the hot plate is placed at a ventilation position in an ultraclean room, and the temperature precision of the hot plate is +/-1 ℃.
Step 4, electron beam exposure of structural patterns: designing the graph of the metal square array structure plate 4-4 by using a graph generator, and exposing the graph by using an electron beam to obtain an exposed substrate; during exposure, etching the PMMA photoresist of the pattern part of the metal square array structure by using an electron beam;
and step 5, developing: at normal temperature, placing the substrate exposed in the step 4 into a developing solution for soaking and developing, wherein the developing solution is prepared by matching tetramethylcyclopentanone and isopropanol in a volume ratio of 3:1, and the soaking and developing time is 60 s;
step 6, fixing: putting the substrate subjected to the soaking and developing in the step 5 into a fixing solution for soaking and fixing, taking the substrate out after the fixing is finished, and drying the substrate by using nitrogen for 60 s;
and 7, drying after fixing: putting the substrate which is soaked and fixed in the step 6 and dried in the air on a hot plate for drying;
step 8, gold plating, namely putting the substrate which is fixed and dried in the step 7 into an electron beam vacuum evaporation coating machine for gold plating, cooling for 10-20 min after evaporation, and taking out the substrate, wherein the vacuum degree of the vacuum evaporation coating machine is not more than 3 × 10-6torr, thickness of gold vapor deposition is 50 nm;
step 9, stripping the PMMA photoresist: soaking the substrate subjected to vacuum gold plating in the step 8 in acetone for at least 30min by using a lift-off process to dissolve the electron beam PMMA photoresist;
step 10, drying: and (4) drying the substrate stripped of the PMMA photoresist obtained in the step (9) by using a nitrogen gun to obtain the metal square array structure plate 4-4.
And 11, fixing the metal square array structure plate 4-4 between the upper high-transmittance glass 4-2 and the lower high-transmittance glass 4-3, and fixing the upper high-transmittance glass 4-2 and the lower high-transmittance glass 4-3 through an external fixing frame 4-1 to prepare the detection unit.
And 12, repeating the steps 1 to 11 to prepare the metal square array structure plates 4-4 with different metal square lengths, so as to obtain different detection units.
Example 3:
as shown in fig. 3, the present embodiment provides a metal array detection and conversion device, which includes a rotating shaft 3, a plurality of detecting units 4 uniformly distributed along the circumferential direction of the rotating shaft 3, and a connecting rod 7 for connecting the detecting units and the rotating shaft 3, wherein one end of the connecting rod 7 is connected to the rotating shaft 3, specifically, one end of the connecting rod 7 is connected to the circumferential side wall of the rotating shaft 3, and the other end of the connecting rod 7 is connected to the detecting unit 4. The rotation of the rotating shaft 3 can drive the detection unit 4 to rotate, so that a plurality of different detection units can be detected one by one, one detection unit can execute one condition after detection, and the aim of screening different conditions can be fulfilled. The detection unit 4 converts the transmission spectral lines for realizing different effects of incident light, so that wavelengths corresponding to the transmission valley positions of a plurality of transmission spectral lines can be obtained, the wavelengths corresponding to the transmission valley positions can be subjected to logic condition screening, a plurality of groups of detection conversion devices can realize a plurality of logic operations, can be used as logic switches, are convenient to operate and are beneficial to realizing dynamic change adjustment.
The detection unit 4 includes: an external fixing frame 4-1, upper high-transmittance glass 4-2, lower high-transmittance glass 4-3 and a metal square array structure plate 4-4; the metal square array structure plate 4-4 is clamped between the upper high-transmittance glass 4-2 and the lower high-transmittance glass 4-3, and the upper high-transmittance glass 4-2 and the lower high-transmittance glass 4-3 are fixed through an external fixing frame 4-1;
the length of a single metal square of the metal square array structural plate 4-4 is 60-120 nm, and the width of the single metal square is 60 nm; the metal square arrays in the metal square array structure plates 4-4 are all the same in size, that is, the metal square arrays in the same detection unit 4 are all the same in size, and the metal square arrays in the metal square array structure plates (4-4) of different detection units (4) are all different in size.
In this embodiment, as shown in fig. 4 and 5, when the detection conversion device is used as a logic switch, the logic switch further includes a detection assembly 1, and the detection assembly 1 includes a transmitting unit 5 and a receiving unit 6; the transmitting unit 5 and the receiving unit 6 are correspondingly arranged, the detection conversion assembly 2 comprises a connecting rod 7 and a detection unit 4, and a gap for the detection conversion assembly 2 to pass through is arranged between the transmitting unit 5 and the receiving unit 6. When the emitting unit 5 generates circularly polarized light and irradiates the detecting unit, the receiving unit 6 measures the linearly polarized light transmittance, and logic condition screening is performed according to the transmittance peak value, so that a logic operation function is realized, and a logic switch function is realized. When the external condition changes, the detection conversion assembly 2 rotates, the detection unit 4 in the detection assembly 1 is replaced by the next gear, and then one logic operation is performed through the transmission spectrum characteristic. The detection unit 4 can perform logical operation judgment once per conversion, and the detection conversion device can realize various logical operations.
When the external condition changes, the detection conversion assembly 2 rotates, the detection units 4 in the transmitting unit 5 and the receiving unit 6 are replaced by the next gear, and then a logic operation is performed through the transmission spectrum characteristics.
Further, the number of the detection units 4 is four, and the detection units are symmetrically arranged in a cross shape. Four detection units 4 are made by using corresponding metal square array structural plates 4-4, and every two detection units 4 are positioned on one side of the cross. In each detection unit 4, in the four detection units, the size of each metal square in the metal square array of the metal square array structural plate 4-4 is the same, the sizes of the metal squares of different detection units are different, the width of the metal squares is unchanged, and four values of the length are respectively corresponding to the four detection units 4.
As shown in fig. 6, the metal block length L of the metal block array structure plate 4-4 is 60nm, the width W is not changed, and when only the length L of the metal block is changed, transmission lines with different effects are generated, and as shown in fig. 6, transmission lines corresponding to visible light bands when the length of the metal block is changed from 60nm to 80nm, 100nm, and 120nm, respectively.
Defining the wavelength corresponding to the transmission valley position of the transmission line as DeltaLambda, the wavelength corresponding to the included angle α of 50 degrees as Lambda, and the wavelength corresponding to the transmission valley position of the transmission line with the length L of 60nm as Lambda of the metal square1When the length L of the metal square is 530nm, the wavelength lambda corresponding to the transmission valley position of the transmission line of 80nm is lambda2When the length L of the metal square is 550nm, the wavelength lambda corresponding to the transmission valley position of the transmission line of 100nm is lambda3580nm, and λ is corresponding to the transmission valley position of the transmission line when the length L of the metal square is 120nm4＝610nm；
When lambda ∈ (0, lambda)1]Executing a first logic operation A;
when lambda ∈ (lambda)1，λ2]Executing a second logic operation B;
when lambda ∈ (lambda)2，λ3]Executing a third logic operation C;
when lambda ∈ (lambda)3，λ4]Executing a fourth logic operation D;
when lambda is more than or equal to lambda4The fifth logic operation E is performed.
When the lengths L of the metal squares are different, different transmittance curves can be generated, the wavelength corresponding to the wave trough of the curve is lambda, the wavelength lambda has the tendency of increasing along with the increase of the lengths L, and when the lengths L of the metal squares are different, a certain corresponding logic operation can be executed through the judgment principle.
Based on the above judgment principle, the working mode of the logic switch based on the detection conversion device is as follows: when the emitting unit 5 generates circularly polarized light and irradiates the detecting unit 4, the receiving unit 6 measures the transmittance of the linearly polarized light, and performs logical condition screening according to the peak value of the transmittance and the corresponding wavelength according to the judgment principle, thereby realizing a logical operation function and a logical switch function. The receiving unit is connected with a processing unit, which can be a control chip or a computer, and processes the signal of the receiving unit.
In this embodiment, two or more groups of rotation devices cooperate to realize various combinational logic operations, increasing the number of executable logic operations: for example, when two sets of detection and conversion devices are provided, the wavelengths corresponding to the transmission valley positions are used as basic logics for combination, the first set can perform logic operation A, B, C or D, the second set can perform logic operation A, B, C or D, and sixteen kinds of logic operations of AA, AB, AC, AD, BA, BB, BC, BD, CA, CB, CC, CD, DA, DB, DC or DD can be performed after combination.
When three sets of test conversion devices are combined, the first set can perform logic A, B, C or D, the second set can perform logic A, B, C or D, and the third set can perform logic A, B, C or D. More than three groups of detection conversion devices can be combined to execute more logic operations, and by analogy, more logic operations can be combined to execute, so that the number of logic operations is increased.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (3)

1. A metal array detection conversion device is characterized in that: the device comprises a rotating shaft (3), a plurality of detection units (4) which are uniformly distributed along the circumferential direction of the rotating shaft (3), and a connecting rod (7) for connecting the detection units and the rotating shaft (3), wherein one end of the connecting rod (7) is connected with the rotating shaft (3), and the other end of the connecting rod (7) is connected with the detection units (4);
the detection unit (4) comprises: the device comprises an external fixing frame (4-1), upper high-transmittance glass (4-2), lower high-transmittance glass (4-3) and a metal square array structure plate (4-4); the metal square array structure plate (4-4) is clamped between the upper high-transmittance glass (4-2) and the lower high-transmittance glass (4-3), and the upper high-transmittance glass (4-2) and the lower high-transmittance glass (4-3) are fixed through an external fixing frame (4-1);
the length of a single metal square of the metal square array structure plate (4-4) is 60-120 nm, and the width of the single metal square is 60 nm;
the sizes of all metal squares of the metal square array structure plate (4-4) are the same, and the sizes of the metal squares of the metal square array structure plate (4-4) of different detection units (4) are different.
2. The metal array detection conversion device of claim 1, wherein: the number of the detection units (4) is four, and the detection units are symmetrically arranged into a cross shape.
3. A metal array detection conversion device according to claim 2, wherein: the wavelength of the metal square array structural plate (4-4) corresponding to the transmission valley position of the visible light wave band transmission line is lambda, and when the length of the metal square is 60nm, the wavelength lambda corresponding to the metal square is lambda1530nm, where the length of the metal square is 80nm corresponds to a wavelength λ2550nm, where the length of the metal square is 100nm, the corresponding wavelength λ is λ3580nm, when the length of the metal square is 120nm, the corresponding wavelength λ is λ4＝610nm；
When lambda ∈ (0, lambda)1]Executing a first logic operation A;
when lambda ∈ (lambda)1，λ2]Executing a second logic operation B;
when lambda ∈ (lambda)2，λ3]Executing a third logic operation C;
when lambda ∈ (lambda)3，λ4]Executing a fourth logic operation D;
when lambda is more than or equal to lambda4The fifth logic operation E is performed.
CN201810044476.3A 2018-01-17 2018-01-17 Metal array detection unit, preparation method thereof and detection conversion device Active CN108264014B (en)

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