CN108258084B - flexible thin-film solar cells and manufacturing method thereof - Google Patents
flexible thin-film solar cells and manufacturing method thereof Download PDFInfo
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- CN108258084B CN108258084B CN201810076695.XA CN201810076695A CN108258084B CN 108258084 B CN108258084 B CN 108258084B CN 201810076695 A CN201810076695 A CN 201810076695A CN 108258084 B CN108258084 B CN 108258084B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses flexible thin-film solar cells and a manufacturing method thereof, wherein the weight and the occupied volume of the flexible thin-film solar cells are reduced by thinning a substrate, the flexible thin-film solar cells can have a high-efficiency power-to-mass ratio, the weight and the volume of a solar cell panel of a space vehicle are further reduced, meanwhile, the mechanical strength of an epitaxial wafer is high and the thickness is uniform by thinning the substrate through a chemical thinning solution, and in addition, the mechanical strength of the epitaxial wafer can be further improved by steps by polishing the substrate through a polishing solution after the substrate is thinned.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to flexible thin-film solar cells and a manufacturing method thereof.
Background
The triple-junction gallium arsenide solar cell has the advantages of high photoelectric conversion efficiency, strong irradiation resistance, good temperature characteristic and the like, is applied to fields in a spacecraft power system and a ground high-power concentrating photovoltaic power station, and completely replaces a crystalline silicon solar cell to become a main power source of a spacecraft, for example, the crystalline silicon solar cell is applied to rockets.
Disclosure of Invention
In view of the above, the invention provides flexible thin-film solar cells and a manufacturing method thereof, the weight and the occupied volume of the flexible thin-film solar cells are reduced by thinning a substrate, the flexible thin-film solar cells can have a more efficient power-to-mass ratio, the weight and the volume of a spacecraft solar cell panel are further reduced, meanwhile, the mechanical strength of an epitaxial wafer can be ensured to be high and the thickness of the epitaxial wafer can be uniform by thinning the substrate through a chemical thinning solution, and in addition, the mechanical strength of the epitaxial wafer can be further improved by steps by polishing the substrate through a polishing solution after the substrate is thinned.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
method for manufacturing flexible thin film solar cell, comprising:
providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate base plate and a battery epitaxial layer grown on the surface of the substrate base plate ;
forming a protective film layer for coating the epitaxial wafer, wherein the side, corresponding to the substrate, of the protective film layer, which is far away from the battery epitaxial layer is a hollow area;
immersing the epitaxial wafer into a chemical thinning solution, and thinning the substrate base plate to a preset thickness;
polishing the side surface of the substrate, which is far away from the battery epitaxial layer , by using a polishing solution;
removing the protective film layer;
a front-side gate electrode and an antireflection layer are sequentially formed on the side of the cell epitaxial layer, which is far away from the substrate , and a back-side electrode is formed on the side of the substrate, which is far away from the cell epitaxial layer .
Optionally, the protective film layer includes:
a photoresist film layer coating the epitaxial wafer;
and the PE film layer coats the photoresist film layer.
Optionally, will in the epitaxial wafer immerses chemical thinning solution, right the substrate base plate thins to predetermineeing thickness, include:
and immersing the epitaxial wafer into a chemical thinning solution, and controlling the epitaxial wafer to be statically immersed so as to thin the substrate base plate to a preset thickness.
Optionally, will in the epitaxial wafer immerses chemical thinning solution, right the substrate base plate thins to predetermineeing thickness, include:
immersing the epitaxial wafer into a chemical thinning solution;
taking out the epitaxial wafer after soaking for a preset time, turning the epitaxial wafer by 180 degrees, and soaking the epitaxial wafer into the chemical thinning solution again;
and repeating the steps for multiple times until the substrate base plate is thinned to a preset thickness.
Optionally, the epitaxial wafer is taken out after soaking for a preset time, and the epitaxial wafer is turned over by 180 degrees and then immersed in the chemical thinning solution again, the method further includes:
and stirring the chemical thinning solution.
Optionally, the back electrode includes an electrode region and a stress relief region.
Optionally, the electrode region is composed of a plurality of block-shaped electrodes;
and gaps between adjacent block electrodes form the stress release regions, and the electrode regions and the stress release regions are distributed in a grid shape.
Optionally, the battery epitaxial layer is a triple junction gallium arsenide battery epitaxial layer.
Optionally, the substrate base plate is a germanium substrate base plate.
Correspondingly, the invention also provides flexible thin-film solar cells, and the flexible thin-film solar cells are manufactured by adopting the manufacturing method of the flexible thin-film solar cells.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides flexible thin-film solar cells and a manufacturing method thereof, and the manufacturing method comprises the steps of providing epitaxial wafers, wherein each epitaxial wafer comprises a substrate base plate and a cell epitaxial layer growing on the surface of the substrate base plate , forming a protective film layer wrapping the epitaxial wafer, the side, away from the cell epitaxial layer , of each protective film layer is a hollow area corresponding to the substrate base plate, immersing the epitaxial wafer into a chemical thinning solution, thinning the substrate base plate to a preset thickness, polishing the side, away from the cell epitaxial layer , of the substrate base plate by using a polishing solution, removing the protective film layer, sequentially forming a front-face gate electrode and an antireflection layer on the side, away from the substrate , of the cell epitaxial layer, and forming a back-face electrode on the side, away from the cell epitaxial layer , of the substrate base plate.
According to the technical scheme, the substrate is thinned to reduce the weight and the occupied volume of the flexible thin-film solar cell, the flexible thin-film solar cell can have a high-efficiency power-to-mass ratio, the weight and the volume of the spacecraft solar cell panel are further reduced, meanwhile, the mechanical strength of the epitaxial wafer is high and the thickness of the epitaxial wafer is uniform by thinning the substrate through the chemical thinning solution, and in addition, the mechanical strength of the epitaxial wafer can be further improved by steps by polishing the substrate through the polishing solution after the substrate is thinned.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of flexible thin-film solar cells and a manufacturing method thereof provided in an embodiment of the present application;
FIGS. 2 a-2 f are schematic views of corresponding structures of the steps in FIG. 1;
FIG. 3 is a flow chart of thinning processes for a substrate provided by an embodiment of the present application;
fig. 4 is a schematic structural diagram of kinds of back electrodes provided in the embodiments of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only partial embodiments of of the present invention, rather than all embodiments.
As described in the background art, the triple-junction gallium arsenide solar cell has the advantages of high photoelectric conversion efficiency, strong irradiation resistance, good temperature characteristic and the like, is applied to a spacecraft power supply system and a ground high-power concentrating photovoltaic power station in degrees, and completely replaces a crystalline silicon solar cell to become a main power supply of a spacecraft, such as a rocket.
Based on this, the flexible thin-film solar cells and the manufacturing method thereof are provided in the embodiments of the present application, the substrate is thinned to reduce the weight and the occupied volume of the flexible thin-film solar cells, the flexible thin-film solar cells can have a more efficient power-to-mass ratio, and further the weight and the volume of the spacecraft solar cell panel are reduced, meanwhile, the mechanical strength of the epitaxial wafer can be ensured to be high and uniform by thinning the substrate through a chemical thinning solution, and in addition, the mechanical strength of the epitaxial wafer can be further improved by steps by polishing the substrate after thinning the substrate, in order to achieve the above purpose, the technical scheme provided in the embodiments of the present application is as follows, and the technical scheme provided in the embodiments of the present application is described in detail with reference to fig. 1 to fig. 4.
Referring to fig. 1, a flowchart of a manufacturing method of flexible thin film solar cells is provided in an embodiment of the present application, where the manufacturing method of a flexible thin film solar cell includes:
s1, providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate base plate and a battery epitaxial layer grown on the surface of the substrate base plate ;
s2, forming a protective film layer wrapping the epitaxial wafer, wherein a hollow area is formed on the side, away from the battery epitaxial layer , of the protective film layer corresponding to the substrate base plate;
s3, immersing the epitaxial wafer into a chemical thinning solution, and thinning the substrate base plate to a preset thickness;
s4, polishing the side surface, away from the battery epitaxial layer , of the substrate base plate by using a polishing solution;
s5, removing the protective film layer;
s6, sequentially forming a front gate electrode and an anti-reflection layer on the side of the cell epitaxial layer far away from the substrate base plate , and forming a back electrode on the side of the substrate base plate far away from the cell epitaxial layer .
The embodiment of the application provides flexible thin-film solar cells and a manufacturing method thereof, and the manufacturing method comprises the steps of providing epitaxial wafers, wherein each epitaxial wafer comprises a substrate base plate and a cell epitaxial layer growing on the surface of the substrate base plate , forming a protective film layer wrapping the epitaxial wafer, the protective film layer corresponds to the side, deviating from the cell epitaxial layer , of the substrate base plate and is a hollow area, immersing the epitaxial wafer into a chemical thinning solution, thinning the substrate base plate to a preset thickness, polishing the side, deviating from the cell epitaxial layer , of the substrate base plate by using a polishing solution, removing the protective film layer, sequentially forming a front-side gate electrode and an antireflection layer on the side, deviating from the substrate , of the cell epitaxial layer, and forming a back-side electrode on the side, deviating from the cell epitaxial layer , of the substrate base plate.
According to the technical scheme, the substrate is thinned to reduce the weight and the occupied volume of the flexible thin-film solar cell, the flexible thin-film solar cell can have a high-efficiency power-to-mass ratio, the weight and the volume of the spacecraft solar cell panel are further reduced, meanwhile, the mechanical strength of the epitaxial wafer can be high and the thickness of the epitaxial wafer is uniform by thinning the substrate through the chemical thinning solution, and in addition, the mechanical strength of the epitaxial wafer can be further improved by steps by polishing the substrate through the polishing solution after the substrate is thinned.
The following describes the manufacturing method provided in the embodiment of the present application in detail with reference to the schematic structural diagram corresponding to each step of the manufacturing flow. Specifically, with reference to the schematic diagrams shown in fig. 1 to 2f, fig. 2a to 2f are schematic diagrams of corresponding structures of the steps in fig. 1.
Referring to fig. 2a, corresponding to step S1, a epitaxial wafer is provided, which includes a substrate 100 and a cell epitaxial layer 200 grown on the surface of the substrate 100 .
In an embodiment of the present application , the substrate base plate provided by the present application may be a germanium substrate base plate, wherein an initial thickness of the germanium substrate base plate may be not less than 140 μm, and the material and the initial thickness range of the substrate base plate are not particularly limited in the present application.
And the battery epitaxial layer provided by the embodiment of the application can be a triple junction gallium arsenide battery epitaxial layer, namely, after the substrate base plate is provided, the nucleation layer, the middle battery, the tunneling layer and the top battery are sequentially grown on the growth surface of the substrate base plate to form the battery epitaxial layer. In addition, when the battery epitaxial layer is a triple junction gallium arsenide battery epitaxial layer, an ohmic contact layer and an epitaxial protection layer can be sequentially formed after the top battery is formed; when the front-side gate electrode is manufactured subsequently, the epitaxial protection layer is required to be removed, the front-side gate electrode is formed on the ohmic contact layer, and then the part of the ohmic contact layer, which is outside the region corresponding to the front-side gate electrode, is etched.
Referring to fig. 2b, in step S2, a protection film 300 wrapping the epitaxial wafer is formed , and the side of the protection film 300 away from the battery epitaxial layer 200 corresponding to the substrate 100 is a hollow area.
The protective film layer provided by the embodiment of the application mainly has the function of protecting the side surface of the epitaxial wafer and the side surface of the epitaxial cell layer in the subsequent chemical thinning process and the like, so that the regions are prevented from being corroded by chemical thinning solution and the like.
In the embodiment of the present application , in order to ensure that the protective film layer can protect the epitaxial wafer more effectively, the protective film layer provided in the embodiment of the present application may be a multi-structure, as shown in fig. 2b, the protective film layer 300 provided in the embodiment of the present application includes:
a photoresist film layer 310 for coating the epitaxial wafer;
and a PE (polyethylene) film 320 covering the photoresist film 310, wherein the structure of the double-layer protective film can protect the side surface of the epitaxial wafer and the surface of the battery epitaxial layer from corrosion.
In the process of forming the protective film layer, firstly, photoresist is coated on the side face of the epitaxial wafer and the surface of the epitaxial cell layer, wherein the photoresist can be positive photoresist, then, the photoresist is subjected to hardening treatment to obtain a photoresist layer, and finally, PE film layers are adhered to the surface of the photoresist layer to obtain the protective film layer.
Referring to fig. 2c, corresponding to step S3, the epitaxial wafer with the protective film layer formed thereon is immersed in a chemical thinning solution to thin the substrate 100 away from the epitaxial cell layer 200 until the substrate is thinned to a predetermined thickness.
Preparing chemical thinning solution after forming a protective film layer on the epitaxial wafer, wherein the chemical thinning solution can be selected from HF and HNO3、CH3COOH、H2SO4、H3PO4、HCLO、HBr、HMnO4The method comprises the steps of preparing or more of the acid materials with water to finally obtain a chemical thinning solution with the concentration range not greater than 75%, and then thinning the substrate to a preset thickness within the temperature range of 0-85 ℃ including the endpoint value by adopting a thinning process, and thinning the substrate to the preset thickness within the time range of not greater than 100 minutes by adopting the thinning process.
In an embodiment of the present application , the immersion of the epitaxial wafer in the chemical thinning solution provided herein thins the substrate to a predetermined thickness, including:
will in the epitaxial wafer immerses chemical thinning solution, control the static soaking of epitaxial wafer, it is right to be in order to the substrate base plate carries out the attenuate to predetermineeing thickness, wherein, after immersing the epitaxial wafer in chemical thinning solution, control epitaxial wafer standing and soak to finally obtain the epitaxial wafer that thickness is even, the stable performance, avoid the epitaxial wafer to take place the shake and influence the attenuate effect.
Specifically, refer to fig. 3, for kinds of flow charts of substrate thinning process that this application embodiment provided, wherein, what this application embodiment provided will in the epitaxial wafer immerses chemical thinning solution, right the substrate base plate is thinned to preset thickness, include:
s11, immersing the epitaxial wafer into a chemical thinning solution;
s12, taking out the epitaxial wafer after soaking for a preset time, turning the epitaxial wafer 180 degrees, and soaking the epitaxial wafer into the chemical thinning solution again;
and S13, repeating the step S12 for multiple times until the substrate base plate is thinned to a preset thickness.
In the thinning process of the substrate, after the epitaxial wafer is immersed in the chemical thinning solution, the static soaking of the epitaxial wafer can be controlled, the epitaxial wafer is taken out and turned for 180 degrees after the preset time (namely, the epitaxial wafer is vertically immersed in the chemical thinning solution when initially entering the epitaxial wafer, namely, the side surface of the epitaxial wafer is downwardly immersed, then the epitaxial wafer is turned for 180 degrees after the preset time, so that the initial bottom surface of the epitaxial wafer becomes the top surface and the initial top surface becomes the bottom surface), then the epitaxial wafer is immersed in the chemical thinning solution again for thinning treatment, the process is repeated for multiple times until the substrate is thinned to the preset thickness, the thinning rate can be greatly improved by thinning the substrate by adopting the mode, the manufacturing time is saved and the manufacturing efficiency is improved in the embodiment, the preset time can be 10 minutes, and the application is not specifically limited.
, taking out the epitaxial wafer after soaking for a preset time, and before turning the epitaxial wafer 180 degrees to immerse the chemical thinning solution again, further comprising:
it is right chemical thinning solution stirs, wherein, stirs chemical thinning solution, can make the unordered floating in solution of reaction product in the chemical thinning solution, and avoids reaction product deposit at the solution bottom and lead to the adhesion to the condition appearance on the epitaxial wafer.
Referring to fig. 2d, the side of the substrate 100 facing away from the cell epitaxial layer 200 is polished with a polishing solution corresponding to step S4. additionally, the surface of the integrated structure may be cleaned with deionized water after the polishing process.
After the substrate is thinned, the side surface of the substrate, which is far away from the cell epitaxial layer , needs to be polished, so that the mechanical strength of the epitaxial wafer can be improved2SO4And H2O2The material is prepared with water, the concentration of the finally obtained polishing solution is not more than 75%, then the temperature range of the polishing process can be 0-85 ℃ in the polishing process, including the end point value, and the time of the polishing process is not more than 30 minutes.
Referring to fig. 2e, the protection film layer 300 is removed corresponding to step S5.
When the protection film layer that this application embodiment provided includes photoresist layer and PE film, can get rid of the protection film layer with the epitaxial wafer immerse in acetone solution to get rid of PE rete and photoresist layer, then carry out organic washing, the oven is baked dry and is handled to the epitaxial wafer.
Referring to fig. 2f, in step S6, a front grid electrode 400 and an anti-reflection layer 500 are sequentially formed on the cell epitaxial layer 200 away from the substrate 100 , and a back electrode 600 is formed on the substrate 100 away from the cell epitaxial layer 200 .
When the battery epitaxial layer provided by the embodiment of the application can be a triple junction gallium arsenide battery epitaxial layer, and an ohmic contact layer and an epitaxial protection layer are sequentially formed after a top battery is formed, firstly removing the epitaxial protection layer, and then manufacturing a front-side gate electrode on the surface of the ohmic contact layer; then, removing the part of the ohmic contact layer, which corresponds to the part outside the front gate electrode area, by adopting an etching technology; and finally, carrying out evaporation plating of the antireflection film outside the region corresponding to the front gate electrode.
In the embodiment, the front electrode thickness provided by the invention is not more than 20 microns, and the antireflection film provided by the embodiment of the invention can be a double-layer film structure and can also be a double-layer film structureA three-layer film structure, and the thickness range of the antireflection film is not more than 10 microns, wherein the two-layer film structure can be formed sequentially of TiO2Layer and Al2O3The layer, three-layer film structure may be sequentially formed Ti3O5Layer, SiO2Layers and MgF layers.
The back electrode provided by the embodiment of the application can comprise an electrode area and a stress release area, wherein the back electrode can release the stress between the electrode area and the epitaxial wafer by adopting the stress release area, and the situation that the epitaxial wafer is warped due to overlarge stress between the electrode area and the epitaxial wafer is avoided.
Referring to fig. 4, a schematic structural diagram of kinds of back electrodes provided in the embodiments of the present application is shown, wherein the electrode region provided in the embodiments of the present application is composed of a plurality of bulk electrodes 610;
and the gaps 620 between the adjacent block electrodes 610 form the stress relief regions, and the electrode regions and the stress relief regions are distributed in a grid shape.
When the latticed back electrodes are manufactured, a photoresist mask can be formed to cover the stress release area, and then the photoresist mask is stripped after the back electrode material is evaporated to obtain the back electrodes. The material of the back electrode provided in the embodiment of the present application may be Ti, Al, Au, Pd, Ag, or a laminated structure formed of the above materials, which is not specific to the present application. In addition, the thickness of the back electrode provided by the embodiment of the application is not more than 20 microns.
In the above method, when a large number of base substrates are manufactured, it is necessary to obtain individual solar cells by dividing and splitting after the electrodes are manufactured.
Correspondingly, the embodiment of the application further provides flexible thin-film solar cells, and the flexible thin-film solar cells are manufactured by adopting the manufacturing method of the flexible thin-film solar cells provided by any embodiment.
The embodiment of the application provides flexible thin-film solar cells and a manufacturing method thereof, and the manufacturing method comprises the steps of providing epitaxial wafers, wherein each epitaxial wafer comprises a substrate base plate and a cell epitaxial layer growing on the surface of the substrate base plate , forming a protective film layer wrapping the epitaxial wafer, the protective film layer corresponds to the side, deviating from the cell epitaxial layer , of the substrate base plate and is a hollow area, immersing the epitaxial wafer into a chemical thinning solution, thinning the substrate base plate to a preset thickness, polishing the side, deviating from the cell epitaxial layer , of the substrate base plate by using a polishing solution, removing the protective film layer, sequentially forming a front-side gate electrode and an antireflection layer on the side, deviating from the substrate , of the cell epitaxial layer, and forming a back-side electrode on the side, deviating from the cell epitaxial layer , of the substrate base plate.
According to the technical scheme, the substrate is thinned to reduce the weight and the occupied volume of the flexible thin-film solar cell, the flexible thin-film solar cell can have a high-efficiency power-to-mass ratio, the weight and the volume of the spacecraft solar cell panel are further reduced, meanwhile, the mechanical strength of the epitaxial wafer can be high and the thickness of the epitaxial wafer is uniform by thinning the substrate through the chemical thinning solution, and in addition, the mechanical strength of the epitaxial wafer can be further improved by steps by polishing the substrate through the polishing solution after the substrate is thinned.
Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention.
Claims (9)
- The manufacturing method of the flexible thin film solar cells is characterized by comprising the following steps:providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate base plate and a battery epitaxial layer grown on the surface of the substrate base plate ;forming a protective film layer for coating the epitaxial wafer, wherein the side, corresponding to the substrate, of the protective film layer, which is far away from the battery epitaxial layer is a hollow area;immersing the epitaxial wafer into a chemical thinning solution, and thinning the substrate base plate to a preset thickness;polishing the side surface of the substrate, which is far away from the battery epitaxial layer , by using a polishing solution;removing the protective film layer;sequentially forming a front gate electrode and an antireflection layer on the side, away from the substrate , of the cell epitaxial layer, and forming a back electrode on the side, away from the cell epitaxial layer , of the substrate;wherein, will in the epitaxial wafer immerges chemical thinning solution, right the substrate base plate thins to predetermineeing thickness, include:immersing the epitaxial wafer into a chemical thinning solution;taking out the epitaxial wafer after soaking for a preset time, turning the epitaxial wafer by 180 degrees, and soaking the epitaxial wafer into the chemical thinning solution again;and repeating the steps for multiple times until the substrate base plate is thinned to a preset thickness.
- 2. The method according to claim 1, wherein the protective film layer comprises:a photoresist film layer coating the epitaxial wafer;and the PE film layer coats the photoresist film layer.
- 3. The method for manufacturing the flexible thin-film solar cell according to claim 1, wherein the step of immersing the epitaxial wafer into a chemical thinning solution to thin the substrate base plate to a preset thickness comprises the following steps:and immersing the epitaxial wafer into a chemical thinning solution, and controlling the epitaxial wafer to be statically immersed so as to thin the substrate base plate to a preset thickness.
- 4. The method for manufacturing a flexible thin film solar cell according to claim 1, wherein after taking out the epitaxial wafer after soaking for a preset time and before turning the epitaxial wafer 180 degrees and immersing the epitaxial wafer in the chemical thinning solution again, the method further comprises:and stirring the chemical thinning solution.
- 5. The method according to claim 1, wherein the back electrode comprises an electrode region and a stress relief region.
- 6. The method according to claim 5, wherein the electrode area is composed of a plurality of bulk electrodes;and gaps between adjacent block electrodes form the stress release regions, and the electrode regions and the stress release regions are distributed in a grid shape.
- 7. The method according to claim 1, wherein the cell epitaxial layer is a triple junction gallium arsenide cell epitaxial layer.
- 8. The method according to claim 1, wherein the substrate base plate is a germanium substrate base plate.
- The flexible thin-film solar cell of 9 or , wherein the flexible thin-film solar cell is manufactured by the method for manufacturing the flexible thin-film solar cell of any of claims 1-8.
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