CN108242763A - The monolithic structure of Electroabsorption Modulated Laser and its making test method - Google Patents
The monolithic structure of Electroabsorption Modulated Laser and its making test method Download PDFInfo
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- CN108242763A CN108242763A CN201810178924.9A CN201810178924A CN108242763A CN 108242763 A CN108242763 A CN 108242763A CN 201810178924 A CN201810178924 A CN 201810178924A CN 108242763 A CN108242763 A CN 108242763A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention provides a kind of monolithic structure of Electroabsorption Modulated Laser (EML) integrated device and its making test methods, belong to semiconductor optoelectronic subdomains, EML integrated devices monolithic structure is grid construction, the multiple quantum wells (MQW) of epitaxial growth laser and the MQW of modulator on wafer, EML device cells array arrangement including laser MQW and modulator MQW；Groove structure is set around EML device cells, side wall surface is minute surface and its bottom is antireflective face；It is respectively formed in the front/rear end face of EML device cells and subtracts/high reflection deielectric-coating, which is the end face of modulator MQW/ laser MQW sides.This monolithic structure is in test, a bar cleavage is not needed to, utilize the combination combination of high reflection deielectric-coating and antireflective face (further subtract /) in trenched side-wall minute surface and channel bottom antireflective face, realize effective light extraction of the EML device cells, not only make test data diagnose and collect it is faster, but also reduce EML integrated device costs of manufacture.
Description
Technical field
The invention belongs to semiconductor optoelectronic subdomains, and in particular to a kind of full wafer of Electroabsorption Modulated Laser integrated device
Structure and its making test method, it is particularly a kind of to realize online full wafer plated film, test and the high-performance and low-cost of screening
Electroabsorption Modulated Laser integrated device and its making test method.
Background technology
Electroabsorption Modulated Laser (EML：Electro-absorption modulated laser) it is distributed feed-back
(DFB：Distributed feedback) laser and electroabsorption modulator (EAM：Electro-Absorption
Modulator integrated device), usually as the key signal light source in telecommunications main line and high speed fibre Transmission system
It is widely used, however it is a kind of edge emitting photonic integrated device, compared with surface launching optical device, still can not achieve device at present
Part full wafer makes detection screening.To find out its cause, this is because the light Exit positions of edge emitting optical device be located at the side of device and
Non-top, therefore edge emitting optical device needs are cleaved into bar item after its manufacture craft is partially completed and bar item and plated film are laminated
Both ends of the surface (both ends cleavage surface), tube core structure could be detected and screened (or even the detection of tube core structure is screened sometimes
Or it is just carried out after singulated dies are resolved into).Edge emitting optical device is cumbersome more multiple than surface launching optical device manufacture craft as a result,
It is miscellaneous and time-consuming so that cost increase, this problem exist in the prior art.Thus, it explores about integrated electro-absorption modulation
The technology of the process optimization practicality of laser is always the important of semiconductor product industry to reduce cost and improve device performance etc.
Subject.
On the other hand, for the above problem of edge emitting optical device, some practices in the prior art are probed into and can be listed below：
The scientific workers such as P.Vettiger propose full wafer processing (FWP in the early 1990s in last century：full-wafer
Processing) and full wafer tests (FWT：Full wafer testing) solution (IEEE, J.of Quantum
Electronics, Vol.27, P.1319,1991), the key point of the solution is the edge-emitting laser with dry etching
End mirror face substitutes natural cleavage plane；The researchers such as Alexa Behfar pass through end face lithographic technique (EFT：etched facet
Technology research) is applied to A1GaInN edge-emitting lasers and the " AlGaInN based on EFT is obtained in the U.S.
The patent protection (US 2012/0142123A1) of laser "；The China such as Sun Changzheng Tsinghua University scientific research personnel, which also inquires into, to deliver
End face lithographic technique about InP-base edge-emitting laser paper (Chin.Phys.Lett., Vol.20, P.1312,
2003).However, for how effectively to realize that laser had not both had in the problems such as light extraction during full wafer is tested in the research of these EFT
Also illustrate consciously without concrete structure, even if the base that these problems are released in the Macom companies of current Massachusetts, United States
Also it is not related in the edge-emitting laser product of the FWP and FWT of EFT technologies.
Invention content
(1) technical problems to be solved
The present invention provides a kind of Electroabsorption Modulated Laser integrated device monolithic structure and its make test method, with
At least partly solve the technical issues of set forth above.
(2) technical solution
According to an aspect of the invention, there is provided a kind of full wafer knot of Electroabsorption Modulated Laser (EML) integrated device
Structure, the monolithic structure of the EML integrated devices is grid construction, including：Wafer substrate；EML device cells, the EML device lists
Member has laser multi-quantum pit structure and modulator multi-quantum pit structure, laser multi-quantum pit structure and modulator Multiple-quantum
Well structure in wafer substrate epitaxial growth and formed, EML device cells array arrangement in wafer substrate；Groove structure,
Side wall surface is minute surface, and antireflective face is formed on bottom, which forms around EML device cells；In EML device cells
Front end face is formed with antireflective deielectric-coating, and high reflection deielectric-coating is formed in the rear end face of EML device cells, which is
The end face of the modulator multi-quantum pit structure side of EML device cells, the rear end face are the laser Multiple-quantum of EML device cells
The end face of well structure side.
The groove structure of the present invention includes：Groove is etched, is set around EML device cells；Chase slot, is formed in
The center of the rear end face of EML device cells and with etching groove be connected；In the chase slot of the rear end faces of EML device cells
The plating of side wall minute surface is formed with high reflection deielectric-coating, and the recessed of adjacent EML device cells is being faced in the front end face of EML device cells
The etching trenched side-wall minute surface plating of the position of groove is formed with antireflective deielectric-coating.
In some embodiments of the invention, it further includes：First ridge ripple conducting bar, is formed in the centre bit across rear end face
The Intermediate Gray of EML device cells put and the top of laser multi-quantum pit structure；Second ridge ripple conducting bar, be formed in across
The Intermediate Gray of the EML device cells of the center of rear end face and the top of modulator multi-quantum pit structure；With the first ridge ripple
The side wall minute surface plating for the chase slot that conducting bar connects is formed with high reflection deielectric-coating, in the etching channel side to connect with the second ridge ripple conducting bar
The plating of wall mirror face is formed with low reflecting medium film.
In some embodiments of the invention, in the friendship of the first ridge ripple conducting bar of EML device cells and the second ridge ripple conducting bar
At boundary, setting is electrically isolated ditch.
In some embodiments of the invention, front end face and rear end face hang down with the first ridge ripple conducting bar of EML device cells
It is straight and vertical with the second ridge ripple conducting bar.
In some embodiments of the invention, in the first ridge ripple conducting bar of each EML device cell and the second ridge waveguide
The top of item sets front electrode respectively, and common backplate is set in whole EML device cells；Front electrode and back side electricity
The metal of pole includes：Titanium platinum (TiPtAu), gold germanium nickel (AuGeN i) or titanium (TiAu) alloy.
In some embodiments of the invention, the width for etching groove is 20~40 μm, and the width of chase slot is 50~100
μm, gash depth is 4~15 μm.
In some embodiments of the invention, the reflectance factor of antireflective deielectric-coating be 0.1%-2%, high reflection deielectric-coating
Reflectance factor be 75%-95%.
According to another aspect of the present invention, a kind of full wafer of Electroabsorption Modulated Laser (EML) integrated device is provided
The making test method of structure, the monolithic structure are grid construction, are included the following steps：The epitaxial growth laser in wafer substrate
Device multi-quantum pit structure and modulator multi-quantum pit structure, EML device cells include laser multi-quantum pit structure and modulator
Multi-quantum pit structure, EML device cells array arrangement in wafer substrate；It scribes and sets around EML device cells progress groove
Groove structure is put, the side wall surface of the groove structure is minute surface, and the bottom of the groove structure is antireflective face；In EML device cells
Front end face formed antireflective deielectric-coating, EML device cells rear end face formed high reflection deielectric-coating, front end face be EML devices
The end face of the modulator multi-quantum pit structure side of part unit, rear end face are the laser multi-quantum pit structure of EML device cells
The end face of side.
In some embodiments of the invention, in the scribing of groove, top half is straight using 200~280 degrees Celsius of techniques
To specific gash depth, lower half portion is in 100~200 degrees Celsius of progress.
In some embodiments of the invention, according to the side of the chase slot corresponding to end face thereafter on EML device cells
Formula sets automatic test machine structure.
In some embodiments of the invention, be electrically isolated ditch formed using etching method or by be electrically isolated ditch region into
Row He isotopic geochemistry, which is realized, to be electrically isolated and is formed.
In some embodiments of the invention, for the target source being coated with of antireflective deielectric-coating and high reflection deielectric-coating, with
There is inclination angle between the normal of wafer substrate.
In some embodiments of the invention, for antireflective deielectric-coating, the Coating Materials of high reflection deielectric-coating, it is
SiO2、Al2O3、TiO2, Si etc.；In addition, antireflective deielectric-coating, high reflection deielectric-coating pass through it is higher than material equivalent refractive index and low
Coating Materials combination and be made.
(3) advantageous effect
It can be seen from the above technical proposal that the monolithic structure and its system of Electroabsorption Modulated Laser integrated device of the present invention
Make test method and at least have the advantages that one of them or a part therein：
(1) cleavage surface is substituted by minute surface, so as to which EML integrated devices monolithic structure is when making test, does not need to a bar item solution
Reason and natural cleavage plane are formed, it is not required that bar item arrangement plated film and chip are drawn and split test, these difficult operating procedures with regard to disappearing naturally
In addition to so as to improve yield rate, reducing cost.
(2) using the combination in trenched side-wall minute surface and channel bottom antireflective face, further utilize be coated with subtract/it is high anti-
The combination of deielectric-coating and antireflective face is penetrated, realizes effective light extraction of the EML device cells, test data is not only made to diagnose and collect
It is faster, and improve EML device performance measuring accuracies.
(3) EML integrated devices monolithic structure relatively easily realizes that being mainly manifested in device does not have cleavage surface in technique
Structure not only makes laser and the integrated of modulator be easier to reach, also eliminates to techniques such as chip cleavage and end face coatings
The dependence of step；Further more, the chase slot corresponding to waveguide of setting EML device cells, is not only protected the test of wafer rank
Card is also easier the operation that mechanism for testing positions, and more improves the validity accordingly tested.
Description of the drawings
Fig. 1 is the flow chart made according to EML devices of embodiment of the present invention full wafer with test method.
Fig. 2 is the diagrammatic cross-section that device architecture after each step is performed in method shown in Fig. 1.
Fig. 3 is the etching groove of EML device cells of the embodiment of the present invention and its schematic top view of limited area.
Fig. 4 is involved by the double ditch ridge ripple conducting bar reticle schematic diagrames of EML of embodiment of the present invention device cells and Fig. 2 section
The schematic diagram of sectional position.
Fig. 5 is the SEM figures of the groove of the embodiment of the present invention.
Fig. 6 is the substrate wafer of the embodiment of the present invention and the location diagram for being coated with material target source.
【Main element of embodiment of the present invention symbol description in attached drawing】
1- substrates；2- laser MQW structures；3- modulator MQW structures；
4- device material structures；5- trenched side-wall minute surfaces；6- channel bottoms antireflective face；
The shallow double ditches of 7-；8- ridge ripple conducting bars；The deep double ditches of 9-；
10- ridge ripple conducting bars；11- is electrically isolated ditch；12- dielectrics；
13- low refractive index polymer materials；The front electrode of 14- lasers；
The front electrode of 15- modulators；16- antireflective deielectric-coating；
17- high reflection deielectric-coating；18- wafer rears；19- backplates；
20- auto testing instruments；21- etches groove；22- gray areas；
23- chase slots.
Specific embodiment
The present invention uses EFT technologies to scribe groove around EML device cells to generate trenched side-wall minute surface and trench bottom
Portion antireflective face has also been coated with front end face (modulation of the antireflective deielectric-coating in EML device cells using full wafer wafer coating technique
The front end face of device side) and high reflection deielectric-coating in the rear end face (rear end face of laser side) of EML device cells, so as to real
The online full wafer plated film of Electroabsorption Modulated Laser integrated device, test, screening are showed and have drawn sliver entirely, so as to avoid every
Cleavage, the plated film of bar item and chip, greatly improve the efficiency, and stabilize device performance and repeatability.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
In a specific embodiment of the present invention, a kind of EML devices full wafer making and test method are provided.In the present embodiment
In, using N-shaped or the InP wafer substrates of p-type doping, which is 2 inches, 3 inches or 4 inches, substrate epitaxial crystal face
For (100) face.
Fig. 1 is the flow chart made according to EML devices of embodiment of the present invention full wafer with test method.Fig. 2 is side shown in Fig. 1
The diagrammatic cross-section of device architecture after each step is performed in method, wherein be labeled as 1), 2) ... 6) subgraph is respectively divided into left
Right three figures, correspond to the device cell section of parallel wave conducting bar, the laser section of vertical waveguide item and vertical waveguide item respectively
Modulator section, (associated with the device cell section of parallel wave conducting bar) parallel wave conducting bar section is by ridge ripple conducting bar 10
The section of heart line (with reference to Fig. 4)；The subgraph being labeled as 7), 8) is only respectively a figure, is cut corresponding to parallel wave conducting bar device cell
Face, although this two figure draw ratio it is mutually different, also different from above-mentioned subgraph 1), 2) ... 6), different drafting ratios is
In order to targetedly be more advantageous to the illustrative purpose of clear explanation.As depicted in figs. 1 and 2, the present embodiment EML devices full wafer system
Make and test method includes：
Step S102, epitaxial growth laser multiple quantum wells (MQW) structure and modulator Multiple-quantum in InP wafer substrates
Well structure.
In this step, the laser MQW structures 2 of epitaxial growth EML integrated devices, modulator in InP wafer substrates 1
The left figure of MQW structures 3 and device material structure 4 (with reference to the subgraph 1 of Fig. 2)).
Wherein, laser MQW structures 2 and modulator MQW structures 3 be by Butt-coupling growing method and manufactured, and
These MQW structures are containing the upper and lower Quantum Well of limiting layer (SCH) respectively, build periodic structure；Laser MQW structures 2 and tune
Device MQW structures 3 processed are similar or entirely different, i.e., laser MQW structures 2 and modulator MQW structures 3 are in trap, base component, thickness
It is similar or entirely different on degree and periodicity.In addition, device material structure 4 includes making each of laser area and modulator region
Kind of material layer, i.e., including buffer layer, far field reduce layer, grating buried layer, etch stop layer, upper under-clad layer, contact transition zone and
Ohmic contact heavily doped layer, these layers are the conventional layer of EML devices, therefore respective description is omitted.
Step S104 has scribed groove around EML device cells and has generated trenched side-wall minute surface and channel bottom antireflective
Face.
In this step, in addition to having scribed groove and having generated trenched side-wall minute surface and channel bottom antireflective face, also it is prepared for
Double ditches, ridge ripple conducting bar and the dependency structure for being electrically isolated the EML device cells such as ditch.
EML device cells are illustrated as the gray area 22 limited by etching groove 21 in figure 3, wherein, in EML devices
The front and back end (upper and lower side for corresponding to Fig. 3) of unit, also sets up chase slot 23, with etching groove in the center of rear end face
21 are connected, and the chase slot is also the structure tested for wafer rank, once the structure is not present, then light will be all in waveguide
The inside also can not just realize light extraction, and it is even more impossible to be tested for the property.Also, utilize dry etching or dry/wet mixing etching
Etching groove 21 and chase slot 23 is made in technology, so as to generate the 6 (reference of trenched side-wall minute surface 5 and channel bottom antireflective face
The subgraph 2 of Fig. 2)), can be referred to as channel bottom falls into light anti-reflection face again in the channel bottom antireflective face 6.Etch groove 21 simultaneously
Width is 20~40 μm, and the width of chase slot 23 is 50~100 μm, and gash depth is 4~15 μm.It should be noted that at this
Groove includes etching groove 21 and chase slot 23 in invention, but sometimes will in the case where clearly understood that based on upper and lower context
Etching groove is referred to as groove.In addition, dry etching technology include reactive ion etching, sense coupling, from
The technologies such as beamlet etching, chemically assisted ion beam etching, magnetic intensified response ion beam etching；Dry/wet mixes lithographic technique
Refer to dry etching and selective wet chemical etching is used alternatingly technology.In addition, by taking sense coupling as an example, use
ICP power is 500W, and RF power is 100W, using Cl2、CH4、H2, Ar mixed gas, 80 degrees Celsius nearby perform etching,
It can obtain smooth side wall and the bottom with nano thread structure；It is alternatively, Celsius using high temperature 200~280 in top half
Degree technique after etching into 6 micrometer depths, then continues to ventilation and temperature is allowed to decline, continue to etch at 100~200 degrees Celsius,
Cl is not added2, Ar carry out continuing to etch, can obtain that side wall is smooth and bottom has the ditch of the nanoscale special end face for falling into light
Slot, schematic construction can refer to the micro-structure diagram (SEM figures) of the scanning electron microscope of Fig. 5.
Further more, the subgraph 3 such as Fig. 2) shown in, scribed in the laser area of EML device cells shallow double ditches 7 and ridge ripple conducting bar 8,
And deep double ditches 9 and ridge ripple conducting bar 10 are scribed in modulator region, scribed between laser and modulator and be electrically isolated ditch 11, except electricity every
Surface growth Si from 11 external EML device cells of ditch3N4Or SiO2Dielectric 12, at Shuan Gou (shallow double ditches 7, deep double ditches 9)
Interior filling benzocyclobutene (BCB) or the low refractive index polymer material 13 of polyimide material.
Also, as shown in figure 4, the ridge ripple conducting bar 8 in laser area and the ridge ripple conducting bar 10 of modulator region are with waveguide core one
The mode of cause is arranged on the Intermediate Gray of EML device cells, the centre bit of the Intermediate Gray and the rear end face of above-mentioned EML device cells
It puts and matches.In addition, the intersection of the ridge ripple conducting bar 10 in the ridge ripple conducting bar 8 and modulator region in laser area, setting is electrically isolated
Ditch 11, width be 20~50 μm, depth be 0.2~1.6 μm, be electrically isolated resistance value for several thousand ohms to megohm.In addition, electricity every
Forming method from ditch 11 includes etching method and He isotopic geochemistry method etc., that is, it can be electrically isolated by lithographic technique to realize,
It can be by be able to decrystallized to make its non-conductive so as to fulfill electric isolution being electrically isolated ditch region and carry out He isotopic geochemistry.
Step S106 is coated with antireflective deielectric-coating in the front end face and rear end face of EML device cells and high reflection is situated between respectively
Plasma membrane.
With reference to the subgraph 4 of Fig. 3, Fig. 4 and Fig. 2), it is seen that subgraph 4) left figure in right side chase slot 23 be in Fig. 3
Chase slot 23 set by the rear end face of EML device cells, it is, subgraph 4) parallel wave conducting bar device cell section be by
Have rotated 90 degree counterclockwise by the parallel wave conducting bar section of the ridge waveguide center line for the Intermediate Gray for being located at EML device cells and
It obtains.Thus, the front and back end of EML device cells corresponding to Fig. 3 upper and lower side in the case of, with regard to subgraph 4) left figure and
Speech, the front and back ends of EML device cells correspond to subgraph 4) left figure left and right end.Then, for represented by gray areas 22
EML device cells, front end face are the front end faces of modulator side, and end face is the rear end face of laser side thereafter.It is specific and
Speech, in conjunction with the subgraph 5 of Fig. 2), the trenched side-wall minute surface in front end face, that is, modulator side of EML device cells, at least just
Against the position (with reference to the P1 in Fig. 4) of the chase slot of adjacent EML device cells, vapor deposition antireflective deielectric-coating 16；In laser
The trenched side-wall minute surface of the chase slot of the rear end face of side is coated with high reflection deielectric-coating 17 (with reference to the P2 in Fig. 4).Before above-mentioned
Rear end face is vertical with ridge ripple conducting bar, and the trenched side-wall minute surface being coated with is also vertical with ridge ripple conducting bar.
Wherein, the reflectance factor of antireflective deielectric-coating 16 is between 0.1%-2%；The reflectance factor of high reflection deielectric-coating 17
Between 75%-95%.In addition, during being coated with of above-mentioned deielectric-coating, due to optical film be coated with position be located at trenched side-wall and
Non-substrate wafer frontside, thus the ion source exit direction for the evaporated device being coated with for deielectric-coating and substrate wafer front face normal it
Between have inclination angle, planetary plating pot may be used.Thus, there is the shape at inclination angle between ion source exit direction and wafer normal
State to the substrate wafer full wafer of rotation, is first coated with the high reflection deielectric-coating 17 of the rear end face of laser side, then makes substrate wafer
To the front end face vapor deposition antireflective deielectric-coating 16 of modulator side after the direction of rotation change of full wafer.Also, these optical films
It is coated with the methods of vapor deposition or sputtering can be used.More specifically, as shown in fig. 6, for protection is formed with photoresist in EML devices
The front of part unit and the substrate wafer full wafer of the front end face of modulator side, only swash EML device cells by ion source
The rear end face of light device side is coated with high reflection deielectric-coating 17；Then remove the protection of the front end face of modulator side with photoresist,
Via evaporated device to the front end face vapor deposition antireflective deielectric-coating 16 of the modulator side of EML device cells；Remove EML devices again
The protection that the front of unit is formed is with photoresist.Thus, such high, antireflective deielectric-coating be coated with as a result, in EML device lists
The trenched side-wall minute surface of the chase slot of the rear end face of the laser side of member is coated with high reflection deielectric-coating 17, in EML device cells
Modulator side front end face the trenched side-wall minute surface in the position for the chase slot at least facing adjacent EML device cells
It is deposited antireflective deielectric-coating 16, and the bottom of chase slot is channel bottom antireflective face or (or the anti-reflection on the antireflective face
Penetrate on the high reflection medium film surface in face) be coated with the structure of antireflective deielectric-coating, i.e. the bottom of chase slot can play reduction
The effect of reflected light.In addition, as being loaded in target source for antireflective deielectric-coating, the Coating Materials of high reflection deielectric-coating, example
SiO can such as be enumerated2、Al2O3、TiO2, Si etc., can be real by the combination of Coating Materials higher than material equivalent refractive index and low
Existing good high anti-and anti-reflection effect.
Step S108 makes electrode to EML device cells, to carry out online full wafer test and screening to EML device cells.
The electrode of EML device cells includes front electrode and backplate.To the laser and modulator of EML device cells
Front electrode is made respectively, and common backplate is made to EML device cells.In detail, with reference to Fig. 2 subgraph 4), subgraph
5) and subgraph 6), for front electrode, the position in laser area and modulator region at the top of waveguide item forms front electrode
Window and front electrode figure is gone out by lithography stripping, and positive electricity is formed by evaporating or sputtering based on front electrode figure
Pole；Front electrode can also be thickened by plating, Ohmic contact is realized in then annealing, so as to obtain swashing for EML device cells
Light device front electrode 14 and modulator front electrode 15.For backplate, pass through the thinned throwing to substrate wafer back side 18
Light and obtain backplate 19, it is, under the premise of front electrode graphic structure obtains protection, wafer rear 18 is carried out
Thinned and polishing treatment, so that wafer is suitable for the cutting in later stage and the cracking of EML units；And due to backplate figure phase
To simple so plating metal in a manner that front is coated with and being grounded, naturally it is also possible to use and front electrode same procedure
It obtains.Also, front electrode metal and backplate metal refer to titanium platinum (TiPtAu) or gold germanium nickel (AuGeN i) or titanium
(TiAu) alloy.
Further more, after the front electrode and backplate of EML device cells complete, received using auto testing instrument 20
The photosignal of EML device cells.Specifically, auto testing instrument 20 receives the slave edge emitting position institute from EML device cells
The optical signal of outgoing and the electric signal that is obtained of conversion via EML device cells.More specifically, such as the subgraph 7 of Fig. 2)
Shown, in the left side EML device cells of adjacent EML device cells (subgraph 7)) on correspond to the chase slot setting of end face thereafter from
Dynamic tester 20, the auto testing instrument 20 receive the right side for carrying out the EML device cells (subgraph 7) that free gray areas 22 represents
EML device cells) transmitting light.Wherein, optical signal, electric signal from EML device cells are to show laser and modulator
When additional working power, bias voltage and signal source, the electro-optical signal and electricity-electric signal converted out by EML device cells, and
And optical signal is the end face corresponding to the symbol 16 from EML device cells front end face (subgraph 8)) light intensity, spectrum and the tune that send out
Optical signal processed etc..
In addition, the wide part of transmitting from EML device cells reaches auto testing instrument 20, fraction reaches channel bottom
Antireflective face (or antireflective film surface).In the transmitting light for reaching the fraction of channel bottom, due to the antireflective face of channel bottom
Effect, the reflected light from channel bottom can be lowered.In this way, when carrying out High Speed Modulation to EML device cells, due to coming
From the reduction of the reflected light of channel bottom so that have phase difference compared to the emergent light for directly reaching auto testing instrument 20 from exit facet
The reflected light of the anxiety of time difference reduces, and make reflected light and emergent light test together in reflected light interference caused by test it is inclined
Subtractive is weak, thus improves the validity accordingly tested.
Certainly, according to actual needs, the full wafer making of Electroabsorption Modulated Laser integrated device of the present invention and test method
Also comprising other techniques and step, since the innovation of the same present invention is unrelated, details are not described herein again.
So far, attached drawing is had been combined the embodiment of the present invention is described in detail.It should be noted that it in attached drawing or says
In bright book text, the realization method that is not painted or describes is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or replaced to it, such as
(1) the method for the present invention is not limited only to EML, further include laser and semiconductor optical amplifier (SOA), SOA and EAM,
Wavelength tunable laser+EAM+SOA, distributed Bragg laser (DBR)+EAM, multisection type self-pulsing laser, superradiance
The integrated devices such as light emitting diode (SLD)+SOA, dfb laser array, EML arrays,；
(2) the method for the present invention is applicable not only to InP substrate, is also applied for a variety of semi-conducting materials such as GaAs, GaN, ZnO
The full wafer of edge emitting photonic integrated circuits (PIC) device makes and full wafer test；
According to above description, those skilled in the art should be to the full wafer of Electroabsorption Modulated Laser integrated device of the present invention
It makes and test method has clear understanding.
In conclusion the main characteristic of the invention lies in that：1) consider the characteristic of InP-base EML integrated devices, it is proposed that it
Carry out the technical solution of full wafer making and test；2) around EML device cells scribed groove and generate trenched side-wall minute surface and
Channel bottom antireflective face；3) in the center of the rear end face of EML device cells, setting chase slot is connected with perimeter trench, and
All channel bottoms of EML device cells are scribed into antireflective face, and corresponding chase slot setting auto testing instrument, as a result,
The etching depth of groove not only can be reduced and save the etching technics time, but also avoid chase trench bottom reflected light to device
The light path impact of performance test.
It should also be noted that, the direction term mentioned in embodiment, for example, " on ", " under ", "front", "rear", " left side ",
" right side " etc. is only the direction of refer to the attached drawing, is not used for limiting the scope of the invention.Through attached drawing, identical element by
Same or similar reference numeral represents.When the understanding of the present invention may be caused to cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present invention
Content.In addition, in the claims, any reference mark between bracket should not be configured to the limit to claim
System.
Unless there are known entitled phase otherwise meaning, the numerical parameter in this specification and appended claims are approximations, energy
Enough required characteristic changings according to as obtained by present disclosure.Specifically, all be used in specification and claim
The number of the middle content for representing composition, reaction condition etc., it is thus understood that repaiied by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning of expression refers to include by specific quantity ± 10% variation in some embodiments, at some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in more than institute for the sequence of above-mentioned steps
Row, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiment mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.Further, it is to be appreciated that the flow of embodiments herein only shows have with the understanding of the present invention
The step of pass, and it is understood that can before shown step, later and between perform for complete other functions permitted
More additional steps.
Particular embodiments described above has carried out the purpose of the present invention, technical solution and advantageous effect further in detail
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (15)
1. a kind of monolithic structure of Electroabsorption Modulated Laser (EML) integrated device, is grid construction, including：
Wafer substrate；
EML device cells, the EML device cells have laser multi-quantum pit structure and modulator multi-quantum pit structure, institute
It states laser multi-quantum pit structure and modulator multi-quantum pit structure is formed in the wafer substrate, the EML device cells
The array arrangement in the wafer substrate；
Groove structure, side wall surface are minute surface, and antireflective face is formed on bottom, which surrounds the EML device cells
It is formed；
Wherein, antireflective deielectric-coating is formed in the front end face of the EML device cells, in the rear end of the EML device cells
Face is formed with high reflection deielectric-coating, end face of the front end face for the modulator multi-quantum pit structure side of EML device cells, institute
State the end face for the laser multi-quantum pit structure side that rear end face is EML device cells.
2. the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 1, which is characterized in that the ditch
Slot structure includes：
Groove is etched, is set around the EML device cells；
Chase slot is formed in the center of the rear end face of the EML device cells and is connected with the etching groove；
Wherein, high reflection deielectric-coating is formed in the plating of the side wall minute surface of the chase slot of the rear end face of the EML device cells,
The etching trenched side-wall in the position for the chase slot for facing adjacent EML device cells of the front end face of the EML device cells
Minute surface plating is formed with antireflective deielectric-coating.
3. the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 2, which is characterized in that also wrap
It includes：
First ridge ripple conducting bar, be formed in across the EML device cells of the center of the rear end face Intermediate Gray and
The top of the laser multi-quantum pit structure；
Second ridge ripple conducting bar, be formed in across the EML device cells of the center of the rear end face Intermediate Gray and
The top of the modulator multi-quantum pit structure；
Wherein, high reflection deielectric-coating is formed in the plating of the side wall minute surface of the chase slot to connect with the first ridge ripple conducting bar,
The etching trenched side-wall minute surface plating to connect with the second ridge ripple conducting bar is formed with low reflecting medium film.
4. the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 3, which is characterized in that
In the first ridge ripple conducting bar of the EML device cells and the intersection of the second ridge ripple conducting bar, setting is electrically isolated ditch.
5. the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 3, which is characterized in that
The front end face and the rear end face it is vertical with the first ridge ripple conducting bar of the EML device cells and with the second ridge waveguide
Item is vertical.
6. the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 2, which is characterized in that
The width of the etching groove is 20~40 μm, and the width of the chase slot is 50~100 μm, and the gash depth is 4
~15 μm.
7. the monolithic structure of Electroabsorption Modulated Laser integrated device according to any one of claim 1 to 6, feature
It is, further includes：
Front electrode is respectively arranged at the first ridge ripple conducting bar of each EML device cell and the top of the second ridge ripple conducting bar；
Backplate is jointly set in whole EML device cells.
8. the monolithic structure of Electroabsorption Modulated Laser integrated device according to any one of claim 1 to 6, feature
It is,
The reflectance factor of the antireflective deielectric-coating is 0.1%-2%, and the reflectance factor of the high reflection deielectric-coating is 75%-
95%.
9. a kind of making test method of the monolithic structure of Electroabsorption Modulated Laser (EML) integrated device, the monolithic structure are
Grid construction, which is characterized in that include the following steps：
Epitaxial growth laser multi-quantum pit structure and modulator multi-quantum pit structure in wafer substrate, EML device cell packets
The laser multi-quantum pit structure and the modulator multi-quantum pit structure are included, in the wafer substrate described in array arrangement
EML device cells；
It is scribed around EML device cells progress groove and groove structure is set, the side wall surface of the groove structure is minute surface, should
The bottom of groove structure is antireflective face；
Antireflective deielectric-coating is formed in the front end face of the EML device cells, height is formed in the rear end face of the EML device cells
Reflecting medium film, end face of the front end face for the modulator multi-quantum pit structure side of EML device cells, the rear end face are
The end face of the laser multi-quantum pit structure side of EML device cells.
10. the making test method of the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 9,
It is characterized in that,
It is described around the EML device cells carry out groove scribe and groove structure be set the step of include：
Etching groove is formed around the EML device cells；
Chase slot is formed in the center of the rear end face of the EML device cells, which is connected with the etching groove；
Wherein, high reflection deielectric-coating is coated in the side wall minute surface of the chase slot of the rear end face of the EML device cells, is coated with
Antireflective deielectric-coating in the EML device cells front end face in the position for the chase slot for facing adjacent EML device cells
Etching trenched side-wall minute surface.
11. the making test method of the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 10,
It is characterized in that, described carry out around the EML device cells in the step of groove is scribed and sets groove structure：
In the Intermediate Gray of the EML device cells of the center across the rear end face, the first ridge ripple conducting bar is scribed respectively
With the second ridge ripple conducting bar；
The first ridge waveguide item is formed in the top of the laser multi-quantum pit structure, by the second ridge waveguide bar shaped
Into in the top of the modulator multi-quantum pit structure；
High reflection deielectric-coating is coated in the side wall minute surface of the chase slot to connect with the first ridge ripple conducting bar, is coated with low reflection
Deielectric-coating is in the etching trenched side-wall minute surface to connect with the second ridge ripple conducting bar.
12. the making test method of the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 10,
It is characterized in that, described carry out around the EML device cells in the step of groove is scribed and sets groove structure：
The groove structure mixes lithographic technique by dry etching or dry/wet and is made；And/or
The width of the etching groove is 20~40 μm, and the width of the chase slot is 50~100 μm, and the gash depth is 4
~15 μm.
13. the making test method of the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 10,
It is characterized in that,
Automatic test machine structure is set in the way of the chase slot corresponding to end face thereafter on the EML device cells；And/or
In the first ridge ripple conducting bar of the EML device cells and the intersection of the second ridge ripple conducting bar, setting is electrically isolated ditch；Wherein,
The electric isolution ditch is formed using etching method or by being electrically isolated ditch region progress He isotopic geochemistry realization electric isolution and shape
Into.
14. the making test method of the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 9,
It is characterized in that,
During the groove is scribed, top half is using 200~280 degrees Celsius of techniques until specific gash depth, lower half portion exists
100~200 degrees Celsius of progress.
15. the making test method of the monolithic structure of Electroabsorption Modulated Laser integrated device according to claim 11,
It is characterized in that,
For the target source of the antireflective deielectric-coating and the vapor deposition of the high reflection deielectric-coating, with the normal of the wafer substrate it
Between have inclination angle.
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