CN108235203A - A kind of method and microphone apparatus of adaptive tracing bias voltage - Google Patents
A kind of method and microphone apparatus of adaptive tracing bias voltage Download PDFInfo
- Publication number
- CN108235203A CN108235203A CN201711310676.0A CN201711310676A CN108235203A CN 108235203 A CN108235203 A CN 108235203A CN 201711310676 A CN201711310676 A CN 201711310676A CN 108235203 A CN108235203 A CN 108235203A
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- China
- Prior art keywords
- bias voltage
- voltage
- pole plate
- back pole
- adaptive tracing
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Pressure Sensors (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The invention discloses a kind of methods and microphone apparatus of adaptive tracing bias voltage, including an Acoustic sensor, Acoustic sensor includes a back pole plate and the acoustic diaphragm being formed on back pole plate, wherein, adaptive tracing bias voltage method includes the following steps:Step S1, add a continuous raised bias voltage to acoustic diaphragm, when bias voltage reaches one first setting voltage, the sensitivity of silicon-based microelectromechanical microphone declines, and record first sets voltage as first voltage;Step S2, to reset under acoustic diaphragm;Step S3, a bias voltage is reset, the size of bias voltage is the 60% to 80% of first voltage.Technical scheme of the present invention advantageous effect is:A kind of method and microphone apparatus of adaptive tracing bias voltage are disclosed, can be with the structure size of precision control part, realization is easy to operate, can adaptively dynamically change bias voltage, promotes sensitivity, reduces signal-to-noise ratio, puies forward high performance consistency.
Description
Technical field
The present invention relates to the methods and wheat of silicon-based microelectromechanical technical field more particularly to a kind of adaptive tracing bias voltage
Gram wind apparatus.
Background technology
Acoustic signals can be converted to electronic signal for various applications by Acoustic sensor.Acoustic sensor has been widely used
In a variety of electronic products, such as mobile phone, camera, laptop and microphone etc..In the prior art, according to different works
Make principle, Acoustic sensor can be divided into piezoelectric type, pressure resistance type and condenser type.
At present, Acoustic sensor forms a plane-parallel capacitor, under the action of acoustic pressure, sound by acoustic diaphragm and back pole plate
Learning vibrating diaphragm will move to back pole plate, and the capacitance between two-plate changes, and realize conversion of the acoustical signal to electric signal.So
And in volume production, height, thickness and the lateral stress of backplane harden structure can all influence the sensitivity of structure, and during wet etching
The concentration of hydrofluoric acid is unable to control, and traditional calibration can only change gain, and this is to lose performance as cost, influences signal-to-noise ratio,
That is the bad control of concentration of the hydrofluoric acid of corrosion acoustic diaphragm in the prior art, can not obtain the good Acoustic sensor of consistency.
Invention content
For the above-mentioned problems in the prior art, now provide one kind aim at it is easy to operate, adaptively dynamically
Change bias voltage, promote sensitivity, improve the method and microphone of a kind of adaptive tracing bias voltage of consistency of performance
Device.
Specific technical solution is as follows:
A kind of adaptive tracing bias voltage method, applied to silicon-based microelectromechanical microphone, the silicon-based microelectromechanical Mike
Bellows chamber includes an Acoustic sensor, and the Acoustic sensor includes a back pole plate and the acoustic diaphragm being formed on the back pole plate,
Including following step:
Step S1, add a continuous raised bias voltage to the acoustic diaphragm, when the bias voltage reaches one
During one setting voltage, the sensitivity of the silicon-based microelectromechanical microphone declines, and records described first and sets voltage as first voltage;
Step S2, to reset under the acoustic diaphragm;
Step S3, reset a bias voltage, the size of the bias voltage for the first voltage 60% to
80%.
Preferably, the bias voltage in the step S3 is the 75% of the first voltage.
A kind of microphone apparatus of adaptive tracing bias voltage, including:
Acoustic sensor, the Acoustic sensor include a back pole plate and the acoustic diaphragm being formed on the back pole plate;
Circuit chip, the circuit chip include:
Control unit, for adjusting the size of the bias voltage;
Storage unit, for storing the first setting voltage, the first voltage.
Preferably, the structure of the back pole plate be a sandwich structure, the sandwich structure from top to bottom for silicon nitride,
Silica, polysilicon.
Preferably, the acoustic diaphragm is to be corroded to be formed by hydrofluoric acid.
Preferably, the substrate for preparing the silicon-based microelectromechanical microphone monomer is one 6 cun of wafers or 8 cun of wafers.
Preferably, the thickness of the back pole plate is 1.4-2.5 times of the thickness of the acoustic diaphragm.
Technical scheme of the present invention advantageous effect is:Disclose method and the Mike of a kind of adaptive tracing bias voltage
Wind apparatus, can be with the structure size of precision control part, and realization is easy to operate, can adaptively dynamically change bias voltage,
Sensitivity is promoted, signal-to-noise ratio is reduced, puies forward high performance consistency.
Description of the drawings
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, the present invention and its feature, outer
Shape and advantage will become more apparent.It should be noted that associated components are not drawn to scale in attached drawing, it is preferred that emphasis is
The purport of the present invention is shown.
Fig. 1 is a kind of flow chart of adaptive tracing bias voltage embodiment of the method for the present invention;
Fig. 2 is the structure diagram about Acoustic sensor in the embodiment of the present invention;
Fig. 3 is the microphone apparatus figure about adaptive tracing bias voltage in the embodiment of the present invention.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained under the premise of creative work is not made it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described in the following with reference to the drawings and specific embodiments, but not as limiting to the invention.
As shown in Figure 1, 2, a kind of adaptive tracing bias voltage method, for silicon-based microelectromechanical microphone, silicon substrate microcomputer
Electric microphone includes an Acoustic sensor 1, and Acoustic sensor 1 includes a back pole plate 2 and the acoustic diaphragm being formed on back pole plate 2
3, which is characterized in that include the following steps:
Step S1, to acoustic diaphragm 3 plus a continuous raised bias voltage Vbias, when bias voltage Vbias reaches
During one first setting voltage, the sensitivity of silicon-based microelectromechanical microphone declines, and record first sets voltage as first voltage;
Step S2, to 3 times resets of acoustic diaphragm;
Step S3, a bias voltage Vbias is reset, bias voltage Vbias is the 60% to 80% of first voltage.
In a kind of preferably embodiment, bias voltage Vbias is the 75% of first voltage.
By the technical solution of above-mentioned adaptive tracing bias voltage Vbias methods, first to acoustic diaphragm 3 plus one
Continuous raised bias voltage Vbias, when bias voltage Vbias reaches one first setting voltage, silicon-based microelectromechanical microphone
Sensitivity decline, record first sets voltage as first voltage, then to 3 times resets of acoustic diaphragm, then resets
One bias voltage Vbias, bias voltage Vbias are the 75% of first voltage;
Further, above-mentioned step S1, S2, S3 are repeated so that the first voltage finally obtained is firm closest to sensitivity
The voltage declined well can adaptively dynamically change bias voltage Vbias, promote sensitivity, reduce signal-to-noise ratio, improve performance
Consistency.
As shown in figure 3, a kind of microphone apparatus of adaptive tracing bias voltage Vbias, including:
Acoustic sensor 1, Acoustic sensor 1 include a back pole plate 2 and the acoustic diaphragm 3 being formed on back pole plate 2;
Circuit chip 4, circuit chip 4 include:
Control unit, for adjusting the size of bias voltage Vbias;
Storage unit, for storing the first setting voltage, first voltage.
In a kind of preferably embodiment, the structure of back pole plate 2 is a sandwich structure, and sandwich structure is from top to bottom
For silicon nitride 20, silica 21, polysilicon 22.
In a kind of preferably embodiment, acoustic diaphragm 3 is to be corroded to be formed by hydrofluoric acid.
In a kind of preferably embodiment, the substrate for preparing silicon-based microelectromechanical microphone monomer is one 6 cun of wafers or 8 cun
Wafer.
In a kind of preferably embodiment, the thickness of back pole plate 2 is 1.4-2.5 times of the thickness of acoustic diaphragm 3.
Specifically, in a kind of preferably embodiment, a kind of microphone apparatus of adaptive tracing bias voltage, wherein wrapping
An Acoustic sensor 1 is included, Acoustic sensor 1 is a plate capacitor structure, including a back pole plate 2 and is formed on back pole plate
Acoustic diaphragm 3;
Further, as shown in figure 3, the microphone apparatus of adaptive tracing bias voltage, is generated using the variation of sound
Barometric gradient so that acoustic diaphragm 3 is interfered by boosting and generates deformation, and then changes the electricity between back pole plate 2 and acoustic diaphragm 3
Capacitance, capacitance carry out processing by circuit chip and are converted to voltage signal;
Further, the control unit of circuit chip 4 adjusts the size of bias voltage Vbias, to acoustic diaphragm 3 plus one
Continuous raised bias voltage Vbias, when bias voltage Vbias reaches one first setting voltage, adaptive tracing biased electrical
The sensitivity of the microphone apparatus of Vbias is pressed to decline, record first sets voltage as first voltage, and pass through circuit chip 4
Storage unit carry out storage the first setting voltage and first voltage;
Further, acoustic diaphragm 3 is related with rigidity, and rigidity is bigger, and deformation is bigger, and then air gap is lower, then exports electricity
Pressure is more excellent with sensitivity, again to 3 times resets of acoustic diaphragm, then resets a bias voltage Vbias, bias voltage
The size of Vbias is the 75% of first voltage, so as to get the voltage that sensitivity just declines is first voltage, and then can be adaptive
Bias voltage Vbias should be dynamically changed, promotes sensitivity, signal-to-noise ratio is reduced, puies forward high performance consistency.
Specifically, in a kind of preferably embodiment, as shown in Fig. 2, Acoustic sensor 1 includes a back pole plate 2 and is formed
In the acoustic diaphragm 3 on back pole plate, an air-gap 23, the bottom setting of back pole plate 2 are set between back pole plate 2 and acoustic diaphragm 3
One acoustic holes 24, air-gap 23 are communicated with acoustic holes 24.The thickness of back pole plate 2 acoustic diaphragm 3 1.4-2.5 times of thickness,
Acoustic diaphragm 3 is formed by the corrosion of hydrogen fluoride HF, and back pole plate 2 is a sandwich structure, and sandwich structure is top-down suitable
Sequence is silicon nitride 20, silica 21 and polysilicon 22, wherein, silicon nitride 20 is very hard but does not thick, can only make a film,
The surface layer of back pole plate 2 is placed in, for ensureing that silica 21 is not corroded by hydrofluoric acid, silica 21 is easy to by hydrofluoric acid corruption
Erosion, is placed in middle section, and polysilicon 22 is placed in the bottom of back pole plate 2 for conduction.For airflow impedances in narrow air gap
In the presence of causing the reduction of high-frequency sensitivity, this point can set a large amount of acoustic holes 24 reduce sky by 2 bottom of back pole plate
The method of flow impedance solves the problems, such as this;
Further, the microphone apparatus of adaptive tracing bias voltage can be held with the structure size of precision control part
It easily realizes batch production, and is integrated convenient for compatible with IC, form complicated micro-system.
The foregoing is merely preferred embodiments of the present invention, not thereby limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all include within the scope of the present invention.
Claims (7)
1. a kind of adaptive tracing bias voltage method, applied to silicon-based microelectromechanical microphone, the silicon-based microelectromechanical microphone
Including an Acoustic sensor, the Acoustic sensor includes a back pole plate and the acoustic diaphragm being formed on the back pole plate,
It is characterized in that, includes the following steps:
Step S1, add a continuous raised bias voltage to the acoustic diaphragm, set when the bias voltage reaches one first
During constant voltage, the sensitivity of the silicon-based microelectromechanical microphone declines, and records described first and sets voltage as first voltage;
Step S2, to reset under the acoustic diaphragm;
Step S3, a bias voltage is reset, the size of the bias voltage is the 60% to 80% of the first voltage.
2. adaptive tracing bias voltage method according to claim 1, which is characterized in that described in the step S3
Bias voltage is the 75% of the first voltage.
3. a kind of microphone apparatus of adaptive tracing bias voltage, which is characterized in that including:
Acoustic sensor, the Acoustic sensor include a back pole plate and the acoustic diaphragm being formed on the back pole plate;
Circuit chip, the circuit chip include:
Control unit, for adjusting the size of the bias voltage;
Storage unit, for storing the first setting voltage, the first voltage.
4. the microphone apparatus of adaptive tracing bias voltage according to claim 3, which is characterized in that the back pole plate
Structure for a sandwich structure, the sandwich structure is from top to bottom silicon nitride, silica, polysilicon.
5. the microphone apparatus of adaptive tracing bias voltage according to claim 3, which is characterized in that the acoustics shakes
Film is to be corroded to be formed by hydrofluoric acid.
6. the microphone apparatus of adaptive tracing bias voltage according to claim 3, which is characterized in that described in preparing certainly
The substrate for adapting to the microphone apparatus of tracking bias voltage is one 6 cun of wafers or 8 cun of wafers.
7. the microphone apparatus of adaptive tracing bias voltage according to claim 3, which is characterized in that the back pole plate
Thickness be 1.4-2.5 times of thickness of the acoustic diaphragm.
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CN201711310676.0A CN108235203A (en) | 2017-12-11 | 2017-12-11 | A kind of method and microphone apparatus of adaptive tracing bias voltage |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101000968A (en) * | 2007-01-19 | 2007-07-18 | 清华大学 | Stack silicon-base miniature fuel celles and manufacturing method |
CN101018429A (en) * | 2007-03-05 | 2007-08-15 | 胡维 | Capacitor micro silicon microphone and making method |
CN101197290A (en) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for semiconductor device |
CN101295662A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Metallic silicide blocking structure forming method and semiconductor device thereof |
CN201699978U (en) * | 2010-04-09 | 2011-01-05 | 无锡芯感智半导体有限公司 | Capacitive miniature silicon microphone |
CN202444620U (en) * | 2012-02-23 | 2012-09-19 | 苏州敏芯微电子技术有限公司 | Capacitance type miniature silicon microphone |
CN103139674A (en) * | 2011-11-28 | 2013-06-05 | 英飞凌科技股份有限公司 | Microphone and method for calibrating a microphone |
CN204681591U (en) * | 2015-05-29 | 2015-09-30 | 歌尔声学股份有限公司 | A kind of MEMS microphone element |
WO2015176745A1 (en) * | 2014-05-20 | 2015-11-26 | Epcos Ag | Microphone and method of operating a microphone |
CN105981407A (en) * | 2014-02-05 | 2016-09-28 | 罗伯特·博世有限公司 | Method and means for regulating the electrical bias voltage in the measuring capacitor of a MEMS sensor element |
WO2017167876A1 (en) * | 2016-03-31 | 2017-10-05 | Tdk Corporation | Mems microphone and method for self-calibration of the mems microphone |
-
2017
- 2017-12-11 CN CN201711310676.0A patent/CN108235203A/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101197290A (en) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for semiconductor device |
CN101000968A (en) * | 2007-01-19 | 2007-07-18 | 清华大学 | Stack silicon-base miniature fuel celles and manufacturing method |
CN101018429A (en) * | 2007-03-05 | 2007-08-15 | 胡维 | Capacitor micro silicon microphone and making method |
CN101295662A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Metallic silicide blocking structure forming method and semiconductor device thereof |
CN201699978U (en) * | 2010-04-09 | 2011-01-05 | 无锡芯感智半导体有限公司 | Capacitive miniature silicon microphone |
CN103139674A (en) * | 2011-11-28 | 2013-06-05 | 英飞凌科技股份有限公司 | Microphone and method for calibrating a microphone |
CN202444620U (en) * | 2012-02-23 | 2012-09-19 | 苏州敏芯微电子技术有限公司 | Capacitance type miniature silicon microphone |
CN105981407A (en) * | 2014-02-05 | 2016-09-28 | 罗伯特·博世有限公司 | Method and means for regulating the electrical bias voltage in the measuring capacitor of a MEMS sensor element |
WO2015176745A1 (en) * | 2014-05-20 | 2015-11-26 | Epcos Ag | Microphone and method of operating a microphone |
CN204681591U (en) * | 2015-05-29 | 2015-09-30 | 歌尔声学股份有限公司 | A kind of MEMS microphone element |
WO2017167876A1 (en) * | 2016-03-31 | 2017-10-05 | Tdk Corporation | Mems microphone and method for self-calibration of the mems microphone |
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Application publication date: 20180629 |