CN108233909A - The controllable semi-conductor electricity electrical source protecting equipment of conversion rate - Google Patents
The controllable semi-conductor electricity electrical source protecting equipment of conversion rate Download PDFInfo
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- CN108233909A CN108233909A CN201710173897.1A CN201710173897A CN108233909A CN 108233909 A CN108233909 A CN 108233909A CN 201710173897 A CN201710173897 A CN 201710173897A CN 108233909 A CN108233909 A CN 108233909A
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- switching controller
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses the controllable semi-conductor electricity electrical source protecting equipments of conversion rate; including power supply, pmos load switch, enabled switch, rate switching controller, microcontroller; the power supply is connect with the source electrode that pmos load switchs; the drain electrode of pmos load switch is connected with load; the grid of pmos load switch is connect with rate switching controller; the enabled switch is connect with rate switching controller, and the microcontroller is connect with rate switching controller；The pmos load switchs to control surge current；The rate switching controller is for controlling pmos load to switch, and the enabled switch is for the working condition of speed control switching controller, the speed that the microcontroller is converted for the rate of regulations speed switching controller.The present invention realizes that the adjustable power protection of rate switchs using the rate switching controller and its peripheral circuit of diversified forms, while also load equipment is avoided to be damaged by surge current using pmos load switch.
Description
Technical field
The present invention relates to power protection switches, and in particular to the controllable semi-conductor electricity electrical source protecting equipment of conversion rate.
Background technology
Rapidly increased and popularized in past 10 years mobile equipment, from portable digital assistant (PDA), to movement
Phone, electronic reader arrive Portable tablet personal computer again, and user wishes that carrying personal communication and the demand of computing device continues
Increasing.These appliance arrangements are required for battery to operate and operating system.Due to the market need lasting to complicated device
It asks, battery system needs to provide more energy to support the application demand of these more high levels and complexity.Limited chemical-electrical
Pond will provide higher supply current, however high current is very rambunctious.
For the battery with higher capacity and load, how to control the surge current from battery to load is one important
The problem of.If opening protection switch too quickly, the load in switch can be caused to generate the high current of ampere grade in the short time
End forms voltage overshoot, and generates voltage drop in the power input or source terminal of protection switch.Excessive overvoltage can be damaged
The sensitive circuit being connected with protection switch, and input terminal excessive voltage drop voltage source can be caused it is uncertain,
The even influence of destructive.Existing semiconductor protection switching technique has surge current certain when opening protection switch
Control ability；However, these equipment usually only control protection switch with fixed conversion rate, and need other relevant
Device generates different conversion rates.
Invention content
The technical problems to be solved by the invention are only protection to be controlled to open with fixed conversion rate in the prior art
It closes, and it is an object of the present invention to provide the controllable semi-conductor electricity electrical source protecting equipment of conversion rate, realizes the conversion rate of power protection switch
Controllable function.
The present invention is achieved through the following technical solutions：
The controllable semi-conductor electricity electrical source protecting equipment of conversion rate, including power supply, pmos load switch, enabled switch, speed
Rate switching controller, microcontroller, the power supply are connect with the source electrode that pmos load switchs, the drain electrode of pmos load switch
It is connected with load, the grid of pmos load switch is connect with rate switching controller, and the enabled switch is controlled with rate conversion
Device connection processed, the microcontroller are connect with rate switching controller；The pmos load switchs to control surge current；
The rate switching controller is for controlling pmos load to switch, and the enabled switch is for speed control switching controller
Working condition, the speed that the microcontroller is converted for the rate of regulations speed switching controller.Pmos load switch connects
Input voltage and the output loading of power supply are connect, the purpose switched using pmos load is the load in order to protect output terminal
Equipment protects it from the damage of potential too high voltages.As connection load capacitance C and power supply it is possible that surge electricity can be generated
Stream makes output terminal load bear too high voltages.Diversified forms can be used in conversion rate control device, to generate resultant effect.
Further, rate switching controller includes oscillator, gate driver, reference current generating, the oscillator
It is connect with reference current generating, the oscillator is connect with gate driver, and the reference current generating connects with gate driver
It connects；The enabled switch is connected on the circuit that oscillator is connect with reference current generating, and the microcontroller is connected to door
On driver, the grid of the pmos load switch is connect with gate driver.The frequency of oscillator is not fixed, the oscillator
Frequency depends on applied voltage, wherein, often apply a specific voltage, a corresponding frequency will be generated, start
Oscillator is arranged on minimum voltage level by period, then frequency accordingly can be very slow, if the rise time can be 30 millis
Second.If necessary to the shorter rise time, control voltage is turned up, the frequency of corresponding voltage-controlled oscillator is higher, so as to drop
The low unlatching rise time of protection switch.
Further, gate driver includes field-effect tube M1, field-effect tube M2, field-effect tube M3, the field-effect tube M2
Grid and oscillator a clock line CLKB connection, the grid of the field-effect tube M3 connects with enabled switch, field-effect
Another clock line CLK connection of the grid and oscillator of pipe M1, the drain electrode of field-effect tube M2 connect with the source electrode of field-effect tube M3
It connects, the source electrode of field-effect tube M2 is connect with the source electrode of field-effect tube M1, the drain electrode of field-effect tube M1 and the drain electrode of field-effect tube M3
Connection, the reference current generating are connected on the circuit that field-effect tube M1 is connect with field-effect tube M2.When CLK signal is height
During level, field-effect tube M1 conductings, and within an of short duration time, reference current IREF can be switched to pmos load
Gate discharge.During this period of time, it when enabled switch is in an open state, is transferred to reference to electric current IREF and is born to PMOS tube
During the pattern of the gate discharge of load switch, field-effect tube M3 is to disconnect, and when needing to close PMOS load switch, enables switch
Closed state can be pulled to, field-effect tube M3 can be used to the grid voltage that pmos load switchs to be withdrawn into power input
Voltage, with this come disconnect pmos load switch.
Further, in two clock signals that two clock lines of oscillator generate, one of clock signal accounts for
For sky than being approximately the 1% of the entire clock cycle, the duty ratio of the clock signal determines the unlatching rise time of clock signal.
Further, rate switching controller includes buffer, field-effect tube M4, field-effect tube M5, field-effect tube M6, field
Effect pipe M7, field-effect tube M8, field-effect tube M9, the grid of the field-effect tube M4 are connected with the grid of field-effect tube M5, institute
The source electrode for stating field-effect tube M4 is connect with the drain electrode of field-effect tube M6, the drain electrode of the field-effect tube M4 and the leakage of field-effect tube M5
Pole connects；The source electrode ground connection of the field-effect tube M6, and the drain electrode of itself is connect with the source electrode of itself；The field-effect tube M6's
Grid is connect with the grid of field-effect tube M7, and the grid of field-effect tube M7 is connect with the drain electrode of itself, the drain electrode of field-effect tube M7
Drain electrode with field-effect tube M8 is connect, and the source electrode of the field-effect tube M8 is connect with the source electrode of field-effect tube M9, the field-effect
The grid of pipe M9 and the grid of field-effect tube connect, and the drain electrode of the field-effect tube M9 is connect with microcontroller, field-effect tube M9
Grid connect with the drain electrode of itself；The source electrode of field-effect tube M7 is connect with the source electrode of field-effect tube M6；The field-effect tube M5
Source electrode be connected on the circuit that the source electrode of field-effect tube M8 is connect with the source electrode of field-effect tube M9.It is also connected on a microcontroller
There are one resistance R, the other end ground connection that resistance R is connect with microcontroller；Field-effect tube M3, field-effect tube M4, field-effect tube M5,
Field-effect tube M6 forms a current mirror；Conversion rate can be realized by the change in resistance or current mirror of resistance R, can be with
It is realized by reference to electric current I1.Conversion time can be extended to 3 milliseconds from 1 millisecond using this rate switching controller.
Compared with prior art, the present invention it has the following advantages and advantages：The present invention uses the speed of diversified forms
Rate switching controller and its peripheral circuit realize the adjustable power protection switch of rate, while are also kept away using pmos load switch
Exempt from load equipment to be damaged by surge current.
Description of the drawings
Attached drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application
Point, do not form the restriction to the embodiment of the present invention.In the accompanying drawings：
Fig. 1 is schematic structural view of the invention；
Fig. 2 is gate driver structural scheme of mechanism；
Fig. 3 is the structure diagram of the different rate switching controllers with Fig. 1.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment 1
As shown in Figure 1, the semi-conductor electricity electrical source protecting equipment that conversion rate is controllable, including power supply, pmos load switch, makes
Energy switch, rate switching controller, microcontroller, the power supply are connect with the source electrode that pmos load switchs, pmos load
The drain electrode of switch is connected with load, and the grid of pmos load switch connect with rate switching controller, it is described it is enabled switch and
Rate switching controller connects, and the microcontroller is connect with rate switching controller；The pmos load switchs to control
Surge current processed；The rate switching controller is for controlling pmos load to switch, and the enabled switch is for speed control
The working condition of switching controller, the speed that the microcontroller is converted for the rate of regulations speed switching controller.Power supply
Using DC power supply；That end of power supply and pmos load switch connection is input terminal, and pmos load switch is connected with load
That end be output terminal；After conversion rate control device is connected, pmos load switch conduction, while pmos load can be made
Switch and the output end voltage of load connection will be increased to input terminal voltage from zero volt, only subtract since pmos load is opened
Close a small amount of pressure drops caused by the conducting resistance of itself；When PMOS tube is closed, conversion rate control device is also at not
Working condition, so that pmos load switch has saved electrical source consumption when being located at closed state.
Rate switching controller includes oscillator, gate driver, reference current generating, the oscillator and reference current
Generator connects, and the oscillator is connect with gate driver, and the reference current generating is connect with gate driver；It is described enabled
Switch is connected on the circuit that oscillator is connect with reference current generating, and the microcontroller is connected on gate driver, institute
The grid for stating pmos load switch is connect with gate driver.
As shown in Fig. 2, gate driver includes field-effect tube M1, field-effect tube M2, field-effect tube M3, the field-effect tube M2
Grid and oscillator a clock line CLKB connection, the grid of the field-effect tube M3 connects with enabled switch, field-effect
Another clock line CLK connection of the grid and oscillator of pipe M1, the drain electrode of field-effect tube M2 connect with the source electrode of field-effect tube M3
It connects, the source electrode of field-effect tube M2 is connect with the source electrode of field-effect tube M1, the drain electrode of field-effect tube M1 and the drain electrode of field-effect tube M3
Connection, the reference current generating are connected on the circuit that field-effect tube M1 is connect with field-effect tube M2.
In two clock signals that two clock lines of oscillator generate, the duty ratio of one of clock signal is approximately
The 1% of entire clock cycle, the duty ratio of the clock signal determines the unlatching rise time of clock signal.
One unlatching rise time controlled rate switching controller provides the grid voltage of pmos load switch,
The oscillator that there is fixed frequency including one and a reference current generating that reference current IREF is provided.This
Rise time controlled slew rate control circuit is turned on and off signal deciding of the state by enabled switch, and when conducting
When, oscillator generates the clock frequency output of a particular duty cycle, the reference generated with timing control reference current generating
Electric current.
Embodiment 2
The difference lies in the frequency that oscillator generates is not fixed embodiment 2, and the oscillator is by voltage with embodiment 1
Control, wherein, often apply a specific voltage, a corresponding frequency will be generated, i.e. the frequency of oscillator depends on
The voltage applied.Oscillator is arranged on minimum voltage level by beginning period, then frequency accordingly can be very slow, such as
Rise time can be 30 milliseconds.If necessary to shorter rising with strength, control voltage is turned up, corresponding voltage-controlled oscillator
Frequency increases, so as to reduce the unlatching rise time of protection switch.
Embodiment 3
The difference lies in as shown in figure 3, rate switching controller includes buffer, field to embodiment 3 with embodiment 1
Effect pipe M4, field-effect tube M5, field-effect tube M6, field-effect tube M7, field-effect tube M8, field-effect tube M9, the field-effect tube
The grid of M4 is connected with the grid of field-effect tube M5, and the source electrode of the field-effect tube M4 is connect with the drain electrode of field-effect tube M6, institute
The drain electrode for stating field-effect tube M4 is connect with the drain electrode of field-effect tube M5；The source electrode ground connection of the field-effect tube M6, and the leakage of itself
Pole is connect with the source electrode of itself；The grid of the field-effect tube M6 is connect with the grid of field-effect tube M7, the grid of field-effect tube M7
Pole is connect with the drain electrode of itself, and the drain electrode of field-effect tube M7 is connect with the drain electrode of field-effect tube M8, the source of the field-effect tube M8
Pole is connect with the source electrode of field-effect tube M9, and the grid of the field-effect tube M9 and the grid of field-effect tube connect, the field-effect
The drain electrode of pipe M9 is connect with microcontroller, and the grid of field-effect tube M9 is connect with the drain electrode of itself；The source electrode of field-effect tube M7 with
The source electrode connection of field-effect tube M6；The source electrode of the field-effect tube M5 is connected to the source electrode of field-effect tube M8 with field-effect tube M9's
On the circuit of source electrode connection.It is also connected on a microcontroller there are one resistance R, another termination that resistance R is connect with microcontroller
Ground；Field-effect tube M3, field-effect tube M4, field-effect tube M5, field-effect tube M6 form a current mirror；Conversion rate can pass through
The change in resistance or current mirror of resistance R is realized, can also be realized by reference to electric current I1.Use this rate switching controller
Conversion time can be extended to 3 milliseconds from 1 millisecond.
Above-described specific embodiment has carried out the purpose of the present invention, technical solution and advantageous effect further
It is described in detail, it should be understood that the foregoing is merely the specific embodiment of the present invention, is not intended to limit the present invention
Protection domain, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (5)
1. the controllable semi-conductor electricity electrical source protecting equipment of conversion rate, which is characterized in that including power supply, pmos load switch, make
Energy switch, rate switching controller, microcontroller, the power supply are connect with the source electrode that pmos load switchs, pmos load
The drain electrode of switch is connected with load, and the grid of pmos load switch connect with rate switching controller, it is described it is enabled switch and
Rate switching controller connects, and the microcontroller is connect with rate switching controller；The pmos load switchs to control
Surge current processed；The rate switching controller is for controlling pmos load to switch, and the enabled switch is for speed control
The working condition of switching controller, the speed that the microcontroller is converted for the rate of regulations speed switching controller.
2. the controllable semi-conductor electricity electrical source protecting equipment of conversion rate according to claim 1, which is characterized in that the rate
Switching controller includes oscillator, gate driver, reference current generating, and the oscillator is connect with reference current generating,
The oscillator is connect with gate driver, and the reference current generating is connect with gate driver；The enabled switch is connected to
On the circuit that oscillator is connect with reference current generating, the microcontroller is connected on gate driver, and the PMOS tube is born
The grid of load switch is connect with gate driver.
3. the controllable semi-conductor electricity electrical source protecting equipment of conversion rate according to claim 2, which is characterized in that the door drives
When dynamic device includes one of field-effect tube M1, field-effect tube M2, the grid of field-effect tube M3, the field-effect tube M2 and oscillator
The CLKB connections of clock line, the grid of the field-effect tube M3 are connected with enabled switch, the grid of field-effect tube M1 and oscillator it is another
A piece clock line CLK connection, the drain electrode of field-effect tube M2 are connect with the source electrode of field-effect tube M3, the source electrode of field-effect tube M2 and field
The source electrode connection of effect pipe M1, the drain electrode of field-effect tube M1 are connect with the drain electrode of field-effect tube M3, the reference current generating
It is connected on the circuit that field-effect tube M1 is connect with field-effect tube M2.
4. the controllable semi-conductor electricity electrical source protecting equipment of conversion rate according to claim 3, at two of the oscillator
Clock line generate two clock signals in, the duty ratio of one of clock signal is approximately the 1% of the entire clock cycle, this when
The duty ratio of clock signal determines the unlatching rise time of clock signal.
5. the controllable semi-conductor electricity electrical source protecting equipment of conversion rate according to claim 1, which is characterized in that the rate
Switching controller include buffer, field-effect tube M4, field-effect tube M5, field-effect tube M6, field-effect tube M7, field-effect tube M8,
Field-effect tube M9, the grid of the field-effect tube M4 are connected with the grid of field-effect tube M5, the source electrode of the field-effect tube M4 with
The drain electrode connection of field-effect tube M6, the drain electrode of the field-effect tube M4 are connect with the drain electrode of field-effect tube M5；The field-effect tube
The source electrode ground connection of M6, and the drain electrode of itself is connect with the source electrode of itself；The grid of the field-effect tube M6 is with field-effect tube M7's
Grid connects, and the grid of field-effect tube M7 is connect with the drain electrode of itself, the drain electrode of field-effect tube M7 and the drain electrode of field-effect tube M8
Connection, the source electrode of the field-effect tube M8 are connect with the source electrode of field-effect tube M9, the grid of the field-effect tube M9 and field-effect
The grid connection of pipe, the drain electrode of the field-effect tube M9 are connect with microcontroller, the grid of field-effect tube M9 and the drain electrode of itself
Connection；The source electrode of field-effect tube M7 is connect with the source electrode of field-effect tube M6；The source electrode connection scene effect of the field-effect tube M5
On the circuit that the source electrode of pipe M8 is connect with the source electrode of field-effect tube M9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710173897.1A CN108233909B (en) | 2017-03-22 | 2017-03-22 | Semiconductor power supply protection device with controllable conversion rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710173897.1A CN108233909B (en) | 2017-03-22 | 2017-03-22 | Semiconductor power supply protection device with controllable conversion rate |
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| CN108233909A true CN108233909A (en) | 2018-06-29 |
| CN108233909B CN108233909B (en) | 2023-08-18 |
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| CN111010032A (en) * | 2018-10-08 | 2020-04-14 | 圣邦微电子（北京）股份有限公司 | Four-pin load switch suitable for different input voltages |
| CN116545422A (en) * | 2023-06-28 | 2023-08-04 | 杰夫微电子（四川）有限公司 | Ultra-low power consumption load switch based on timer control and control method thereof |
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| CN111010032B (en) * | 2018-10-08 | 2021-09-24 | 圣邦微电子（北京）股份有限公司 | Four-pin load switch suitable for different input voltages |
| CN116545422A (en) * | 2023-06-28 | 2023-08-04 | 杰夫微电子（四川）有限公司 | Ultra-low power consumption load switch based on timer control and control method thereof |
| CN116545422B (en) * | 2023-06-28 | 2023-09-05 | 杰夫微电子（四川）有限公司 | Ultra-low power consumption load switch based on timer control and control method thereof |
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| CN108233909B (en) | 2023-08-18 |
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