CN108233891A - Duplexer - Google Patents
Duplexer Download PDFInfo
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- CN108233891A CN108233891A CN201810096372.7A CN201810096372A CN108233891A CN 108233891 A CN108233891 A CN 108233891A CN 201810096372 A CN201810096372 A CN 201810096372A CN 108233891 A CN108233891 A CN 108233891A
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- electrode
- piezoelectric layer
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 34
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 5
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 14
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of duplexers.The duplexer includes：Substrate, first electrode, piezoelectric layer, second electrode, wherein, first electrode on substrate, has sound wave resonance portion between the part and substrate of first electrode；Piezoelectric layer, in first electrode；A part for second electrode is located on piezoelectric layer, and a part again for second electrode is located in first electrode；The part that sound wave resonance portion, first electrode, piezoelectric layer, second electrode are located on piezoelectric layer forms at least one thin film bulk acoustic wave resonator；First electrode and second electrode, which are located in first electrode, further partly forms at least one SAW resonator.By the present invention, solves the problems, such as the complex manufacturing technology of the bulk acoustic wave duplexer with difference output in the relevant technologies.
Description
Technical field
The present invention relates to electronic communication devices field, in particular to a kind of duplexer.
Background technology
Piezoelectricity duplexer is one of important component of handheld mobile communication product.At present, handheld mobile communication product
It is main to use the duplexer made based on piezoelectric material, such as bulk acoustic wave duplexer.In modern transceiver design, receiving port is normal
Using the form of difference, so as to better suppression common mode noise, better receiving sensitivity is obtained.
Fig. 1 is the schematic diagram of the duplexer of the prior art being made of two bulk accoustic wave filters, receiving filter 100
Using the form of difference output.Each wave filter is made of three series resonators and three parallel resonators.As shown in Figure 1,
Receiving filter 100 is made of series resonator 111,112,113 and parallel resonator 121,122,123.Wherein, series resonance
Thin film bulk acoustic wave resonator (FBAR), solid-state assembling resonator (SMR) may be used in device and parallel resonator.In addition, wave filter
100 further include the inductance 103,104,105 of ground connection, wherein, the inductance 103,104,105 respectively with parallel resonator 121,122,
123 are connected, and the inductance of these ground connection can form transmission zero with parallel resonator 121,122,123, so as to improve filtering
The stopband of device 100 inhibits.Wherein receiving filter is connected to a balun (Balun), to realize wave filter single-ended-to-difference
Conversion.
A variety of ways of realization such as transformer, L-C/C-L impedance transformers may be used in balun.With mobile hand-held device not
It is disconnected to develop towards miniaturization and lightening direction, have to the size of used duplexer and more carry out about small requirement, in bulk acoustic wave
Balun is additionally introduced in wave filter can directly influence the size of duplexer chip, while balun can also increase the insertion of duplexer
Loss.
Bulk acoustic wave duplexer realizes that another scheme of difference output is that receiving filter uses Coupled resonator filter
(CRF), structure is as shown in Figure 2.Fig. 3 is a kind of schematic diagram of the cross section of Coupled resonator filter (CRF) of the prior art, such as
Shown in Fig. 3, Coupled resonator filter is formed there are two bulk acoustic wave resonator stacked on top, have between two resonators coupling layer every
From.Because Coupled resonator filter is stacked by two bulk accoustic wave filters, while to ensure the one of two resonators
Cause property, therefore there are many photoetching number of the needs of Coupled resonator filter (CRF), manufacturing process is extremely complex.
For in the relevant technologies have difference output bulk acoustic wave duplexer complex manufacturing technology the problem of, at present not yet
It is proposed effective solution.
Invention content
It is a primary object of the present invention to provide a kind of duplexer, answered with the manufacture craft for solving duplexer in the relevant technologies
The problem of miscellaneous.
To achieve these goals, according to an aspect of the invention, there is provided a kind of duplexer, the duplexer include：
Substrate, first electrode, piezoelectric layer, second electrode, wherein, the first electrode, on the substrate, the first electrode
It is a part of that there is sound wave resonance portion between the substrate；The piezoelectric layer, in the first electrode；The second electrode
A part be located on the piezoelectric layer, the second electrode again a part be located at the first electrode on；The sound wave is humorous
The part that portion, the first electrode, the piezoelectric layer, the second electrode of shaking are located on the piezoelectric layer forms at least one
Thin film bulk acoustic wave resonator；Another part that the first electrode and the second electrode are located in the first electrode is formed extremely
A few SAW resonator.
Further, the substrate has groove, and a part for the first electrode covers the groove and forms cavity, institute
Cavity is stated as the sound wave resonance portion.
Further, which further includes：Acoustic reflector between the substrate and the first electrode,
In, the acoustic reflector is the sound wave resonance portion.
Further, the acoustic reflector includes at least two layers of acoustic impedance material.
Further, at least two layers of acoustic impedance material replaces structure for the first acoustic impedance material and the second acoustic impedance material
Into, wherein, the acoustic impedance of first acoustic impedance material is less than second acoustic impedance material.
Further, the first electrode forms the interdigital transducer and reflecting grating of the SAW resonator, described
Second electrode be located in the first electrode it is another partly form the SAW resonator be electrically connected layer.
Further, spaced part forms the sound surface resonator to the first electrode over the substrate
Interdigital transducer and reflecting grating.
Further, the material of the first electrode and the second electrode is at least one of：Molybdenum, tungsten, aluminium；With/
Or, the material of the piezoelectric layer is at least one of：Aluminium nitride, zinc oxide, PZT；And/or the material of the substrate includes
At least one of：LiTaO3、LiNbO3.
Further, at least one thin film bulk acoustic wave resonator composition transmitting filter；At least one sound table
Surface wave resonator forms receiving filter.
Further, the receiving filter includes at least two opposite polarity interdigital transducers.
The present invention by substrate, first electrode, piezoelectric layer, second electrode, wherein, first electrode, on substrate, first
There is sound wave resonance portion between the part and substrate of electrode；Piezoelectric layer, in first electrode；A part of position of second electrode
In on piezoelectric layer, a part again for second electrode is located in first electrode；Sound wave resonance portion, first electrode, piezoelectric layer, the second electricity
The part that pole is located on piezoelectric layer forms at least one thin film bulk acoustic wave resonator；First electrode and second electrode are located at first
At least one SAW resonator is partly further formed on electrode, solves the bulk acoustic wave duplexer with difference output
The problem of complex manufacturing technology, and then achieved the effect that the manufacture craft of simplified duplexer.
Description of the drawings
The attached drawing for forming the part of the application is used to provide further understanding of the present invention, schematic reality of the invention
Example and its explanation are applied for explaining the present invention, is not constituted improper limitations of the present invention.In the accompanying drawings：
Fig. 1 is the schematic diagram of the duplexer of the prior art being made of two bulk accoustic wave filters；
Fig. 2 is the schematic diagram of duplexer that another kind of the prior art is made of two bulk accoustic wave filters；
Fig. 3 is a kind of cross-sectional view of Coupled resonator filter (CRF) of the prior art；
Fig. 4 is the schematic diagram of the cross section of the sub- device of duplexer according to a first embodiment of the present invention；
Fig. 5 is the schematic diagram of the cross section of the sub- device of duplexer according to a second embodiment of the present invention；
Fig. 6 is the schematic diagram of duplexer according to a first embodiment of the present invention；
Fig. 7 is the schematic diagram of duplexer in accordance with another embodiment of the present invention；And
Fig. 8 is the schematic diagram according to the duplexer of another embodiment of the invention.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order to which those skilled in the art is made to more fully understand application scheme, below in conjunction in the embodiment of the present application
The technical solution in the embodiment of the present application is clearly and completely described in attached drawing, it is clear that described embodiment is only
The embodiment of the application part, instead of all the embodiments.Based on the embodiment in the application, ordinary skill people
Member's all other embodiments obtained without making creative work should all belong to the model of the application protection
It encloses.
It should be noted that term " first " in the description and claims of this application and above-mentioned attached drawing, "
Two " etc. be the object for distinguishing similar, and specific sequence or precedence are described without being used for.It should be appreciated that it uses in this way
Data can be interchanged in the appropriate case, so as to embodiments herein described herein.In addition, term " comprising " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing series of steps or unit
Process, method, system, product or equipment are not necessarily limited to those steps or unit clearly listed, but may include without clear
It is listing to Chu or for the intrinsic other steps of these processes, method, product or equipment or unit.
An embodiment of the present invention provides a kind of duplexer, which includes：Substrate, first electrode, piezoelectric layer, the second electricity
Pole, wherein, first electrode on substrate, has sound wave resonance portion between the part and substrate of first electrode；Piezoelectric layer,
In first electrode；A part for second electrode is located on piezoelectric layer, and a part again for second electrode is located in first electrode；
The part that sound wave resonance portion, first electrode, piezoelectric layer, second electrode are located on piezoelectric layer forms at least one film bulk acoustic
Resonator；First electrode and second electrode, which are located in first electrode, further partly forms at least one SAW resonator.
Fig. 4 is the schematic diagram of the cross section of the sub- device of duplexer according to a first embodiment of the present invention, and duplexer can be with
It is piezoelectricity duplexer, for example, difference output piezoelectricity duplexer, as shown in figure 4, the substrate of the duplexer can be Piezoelectric Substrates
401, there is cavity 411 between first electrode 412 and Piezoelectric Substrates 401, cavity can be by way of etching in Piezoelectric Substrates
It is formed, substrate has groove, and the part covering groove of first electrode forms cavity, and cavity is as sound wave resonance portion.First
Electrode forms the interdigital transducer and reflecting grating of SAW resonator, and spaced part is formed first electrode on substrate
The interdigital transducer and reflecting grating of sound surface resonator.Another part that second electrode is located in first electrode forms surface acoustic wave
Resonator is electrically connected layer, multiple sound wave resonance portions and it is multiple be electrically connected layer and repeat setting can be used as a kind of piezoelectricity duplex
Device.
Duplexer further includes piezoelectric layer 413 and second electrode 414.The material of Piezoelectric Substrates include but not limited to LiTaO3,
LiNbO3 etc..The material of first electrode and second electrode includes but not limited to molybdenum, tungsten, aluminium etc..Piezoelectricity layer material includes but unlimited
In materials such as aluminium nitride (AlN), zinc oxide (ZnO), PZT.Cavity 411, first electrode 412, piezoelectric layer 413, second electrode 414
Collectively form a film bulk acoustic resonator 410.Piezoelectric Substrates 401, first electrode 412, second electrode 414 collectively constitute one
SAW resonator.First electrode 412 can form the interdigital transducer (IDT) and reflecting grating of SAW resonator.The
What two electrodes 414 may be constructed SAW resonator 420 is electrically connected layer.There are one or multiple 410 and 420 be connected with each other,
A piezoelectricity duplexer is just constituted, the receiving filter of the duplexer uses the form of difference output.
Optionally, the material of first electrode and second electrode is at least one of：Molybdenum, tungsten, aluminium or other metal materials；
And/or the material of piezoelectric layer is at least one of：Aluminium nitride, zinc oxide, PZT or other piezoelectric materials；And/or substrate
Material includes at least one of：LiTaO3, LiNbO3 or other Piezoelectric Substrates.At least one thin film bulk acoustic wave resonator composition
Transmitting filter；At least one SAW resonator forms receiving filter, and receiving filter includes at least two polarity phases
Anti- interdigital transducer.
The embodiment uses substrate, first electrode, piezoelectric layer, second electrode, wherein, first electrode, on substrate, the
There is sound wave resonance portion between the part and substrate of one electrode；Piezoelectric layer, in first electrode；A part for second electrode
On piezoelectric layer, a part again for second electrode is located in first electrode；Sound wave resonance portion, first electrode, piezoelectric layer, second
The part that electrode is located on piezoelectric layer forms at least one thin film bulk acoustic wave resonator；First electrode and second electrode are located at the
At least one SAW resonator is partly further formed on one electrode, such structure can solve have difference output
The problem of complex manufacturing technology of bulk acoustic wave duplexer, so as to achieve the effect that the manufacture craft of simplified duplexer.
Fig. 5 is the schematic diagram of the cross section of the sub- device of duplexer according to a second embodiment of the present invention, as shown in figure 5,
The duplexer includes：Piezoelectric Substrates 501；Deposited in Piezoelectric Substrates the acoustic reflection mirror 530,530 of formation by film 515,
516th, 517,518,519 composition, wherein 515,517,519 be low acoustic impedance material, such as silica.516th, 518 be high acoustic resistance
Anti- material, such as tungsten.First electrode 512；Piezoelectric layer 513；Second electrode 514.The material of Piezoelectric Substrates includes but not limited to
LiTaO3, LiNbO3 etc..The material of first electrode and second electrode includes but not limited to molybdenum, tungsten, aluminium etc..Piezoelectricity layer material includes
But it is not limited to the materials such as aluminium nitride (AlN), zinc oxide (ZnO), PZT.Acoustic reflection mirror 530, first electrode 512, piezoelectric layer
513rd, second electrode 514 collectively forms a film bulk acoustic resonator 510.Piezoelectric Substrates 501, first electrode 512, second electrode
514 collectively constitute the raw surface resonator of one.First electrode 512 can form the interdigital transducer of SAW resonator
(IDT) and reflecting grating.What second electrode 514 may be constructed SAW resonator 420 is electrically connected layer.There are one or it is multiple
510 and 520 are connected with each other, and just constitute a piezoelectricity duplexer, and the receiving filter of the duplexer uses the shape of difference output
Formula.
Fig. 6 is the schematic diagram of duplexer according to a first embodiment of the present invention, as shown in fig. 6, piezoelectricity duplexer 600 is by sending out
Wave filter 610 and receiving filter 620 is sent to form.Wave filter 610 is by series resonator 611,612,613 and parallel resonator
614th, 615,616 composition.Wherein, series resonator and the structure of parallel resonator are the film bulk acoustic filter shown in Fig. 4 410
Thin-film bulk acoustic wave filter shown in 510 in wave device or Fig. 5.In addition, wave filter 610 further include ground connection inductance 617,618,
619, wherein, which is connected respectively with parallel resonator 614,615,616, and the inductance of these ground connection can
To form transmission zero with parallel resonator 614,615,616, inhibit so as to improve the stopband of wave filter 100.
Wave filter 620 is made of interdigital transducer (IDT) 622,623,624 and reflecting grating 621,625, interdigital transducer
(IDT) 622,623,624 and reflecting grating 621,625 structure for shown in shown in Fig. 4 420 or 520 in Fig. 5.Interdigital transducer
(IDT) 623 one end is connected with the input port of wave filter, other end ground connection.One end of interdigital transducer (IDT) 622 with
The output port 643 of wave filter is connected, other end ground connection.One end of interdigital transducer (IDT) 624 and the output terminal of wave filter
Mouth 644 is connected, other end ground connection.There are one signal input port and two signal output ports 643,644 for wave filter 620.
Because the polarity of interdigital transducer (IDT) 622 and 624 is on the contrary, the signal width that therefore two signal output ports 643,644 export
Spend equal, phase difference 180o。
631 and 632 be phase shifter, and phase shifter 631 and 632 causes wave filter 610 and wave filter 620 in respective passband
It will not influence each other.Phase shifter 631 and 632 can be made of diversified forms such as inductance, capacitance, transmission lines.Simultaneously in certain electricity
Phase shifter 631 and 632 can be merged into one in road.
Fig. 7 is the schematic diagram of duplexer in accordance with another embodiment of the present invention, as shown in fig. 7, the duplexer of embodiment
Structure is identical with the diplexer structure of first embodiment with the duplexer, and the difference lies in phase shifter 732 and wave filter
Resonator 731 is additionally provided between 720.
Fig. 8 is according to the schematic diagram of the duplexer of another embodiment of the invention, as shown in figure 8, the duplex of the embodiment
Device structure is identical with the diplexer structure of embodiment in Fig. 7, the difference lies in, the embodiment interdigital transducer by three more
Five are changed to, resonator 831 is also connect with interdigital transducer 826 and 827.
Compared with prior art, the present invention has the following advantages：It is answered not increasing thin-film bulk acoustic wave filter manufacturing process
Miscellaneous degree and under the premise of increasing additional balun (Balun), realizes the output form of thin-film bulk acoustic wave filter single-ended-to-difference,
The volume of difference film bulk acoustic duplexer is reduced, while improves the insertion loss of duplexer receiving filter, so as to make
Receiver obtains better receiving sensitivity.
In the above embodiment of the present invention, all emphasize particularly on different fields to the description of each embodiment, do not have in some embodiment
The part of detailed description may refer to the associated description of other embodiment.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, that is made any repaiies
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of duplexer, which is characterized in that including：Substrate, first electrode, piezoelectric layer, second electrode, wherein,
The first electrode, it is humorous with sound wave between a part for the first electrode and the substrate on the substrate
Shake portion；
The piezoelectric layer, in the first electrode；
A part for the second electrode is located on the piezoelectric layer, and a part again for the second electrode is located at the described first electricity
On extremely；
The sound wave resonance portion, the first electrode, the piezoelectric layer, the second electrode are located at one on the piezoelectric layer
Divide and form at least one thin film bulk acoustic wave resonator；
The first electrode and the second electrode, which are located in the first electrode, further partly forms at least one sound surface
Wave resonator.
2. duplexer according to claim 1, which is characterized in that the substrate have groove, the one of the first electrode
Part covers the groove and forms cavity, and the cavity is as the sound wave resonance portion.
3. duplexer according to claim 1, which is characterized in that further include：Positioned at the substrate and the first electrode
Between acoustic reflector, wherein, the acoustic reflector be the sound wave resonance portion.
4. duplexer according to claim 3, which is characterized in that the acoustic reflector includes at least two layers of acoustic impedance material
Material.
5. duplexer according to claim 4, which is characterized in that at least two layers of acoustic impedance material is the first acoustic impedance
Material and the second acoustic impedance material are alternately formed, wherein, the acoustic impedance of first acoustic impedance material is less than second acoustic resistance
Anti- material.
6. duplexer according to claim 1, which is characterized in that the first electrode forms the SAW resonator
Interdigital transducer and reflecting grating, what the second electrode was located in the first electrode another partly forms the surface acoustic wave
Resonator is electrically connected layer.
7. duplexer according to claim 6, which is characterized in that the first electrode is spaced over the substrate
Part forms the interdigital transducer and reflecting grating of the sound surface resonator.
8. duplexer according to any one of claim 1 to 7, which is characterized in that the first electrode and described second
The material of electrode is at least one of：Molybdenum, tungsten, aluminium；And/or the material of the piezoelectric layer is at least one of：Nitridation
Aluminium, zinc oxide, PZT；And/or the material of the substrate includes at least one of：LiTaO3、LiNbO3。
9. duplexer according to any one of claim 1 to 7, which is characterized in that at least one film bulk acoustic
Resonator forms transmitting filter；At least one SAW resonator forms receiving filter.
10. duplexer according to claim 9, which is characterized in that the receiving filter includes at least two polarity phases
Anti- interdigital transducer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810096372.7A CN108233891B (en) | 2018-01-31 | 2018-01-31 | Duplexer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810096372.7A CN108233891B (en) | 2018-01-31 | 2018-01-31 | Duplexer |
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| CN108233891A true CN108233891A (en) | 2018-06-29 |
| CN108233891B CN108233891B (en) | 2023-10-27 |
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| CN201810096372.7A Active CN108233891B (en) | 2018-01-31 | 2018-01-31 | Duplexer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111865248A (en) * | 2020-04-30 | 2020-10-30 | 诺思(天津)微***有限责任公司 | Resonator assembly, semiconductor device, electronic apparatus, and method of manufacturing resonator assembly |
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| CN108233891B (en) | 2023-10-27 |
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Application publication date: 20180629 Assignee: Suzhou zexun Technology Co.,Ltd. Assignor: HUBEI QUANTGRAV TECHNOLOGY Co.,Ltd. Contract record no.: X2019320010013 Denomination of invention: Communication system duplexer and multiplexer and duplexer and multiplexer method License type: Common License Record date: 20191226 |
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