CN108231967A - Light emitting diode and preparation method thereof, lighting device - Google Patents
Light emitting diode and preparation method thereof, lighting device Download PDFInfo
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- CN108231967A CN108231967A CN201810004954.8A CN201810004954A CN108231967A CN 108231967 A CN108231967 A CN 108231967A CN 201810004954 A CN201810004954 A CN 201810004954A CN 108231967 A CN108231967 A CN 108231967A
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- 238000002360 preparation method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000002346 layers by function Substances 0.000 claims abstract description 44
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 319
- 230000012010 growth Effects 0.000 claims description 28
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 20
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 20
- 230000007797 corrosion Effects 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 20
- 230000026267 regulation of growth Effects 0.000 claims description 17
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 19
- 230000008859 change Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 45
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 43
- 230000004888 barrier function Effects 0.000 description 15
- 239000000243 solution Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 210000004209 hair Anatomy 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 241001465382 Physalis alkekengi Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The embodiment of the present invention provides a kind of light emitting diode and its manufacturing method and display device.Light emitting diode including light emitting functional layer substrate and setting over the substrate, is provided in the light emitting functional layer for changing the diffuser structure of light transmission path.The present invention in light emitting functional layer by setting diffuser structure, diffuser structure can change light transmission path, reduce the total reflection that light occurs in LED internal, and then reduce the loss caused by total reflection, light extraction efficiency is improved, increases external quantum efficiency.Technical measure is succinct, with obvious effects, easy to implement, is with a wide range of applications.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of light emitting diode and preparation method thereof, illumination dress
It puts.
Background technology
Since semiconductor light-emitting-diode (Light Emitting Diode, LED) has simple in structure, small, section
Can, efficiently, the advantages that long-lived, light is clear, gradual traditional lightings lamps and lanterns such as substitution incandescent lamp, fluorescent lamp in recent years, just into
For the main product of illumination market of new generation, the application in electro-optical system is also extremely widespread.At present, two pole of semiconductor light emitting
Pipe is all utilized in Grown light emitting functional layer (also referred to as epitaxial structure), and substrate includes Sapphire Substrate or gallium nitride base
(GaN) substrate.
Through present inventor the study found that due to substrate refractive index considerably beyond air the refractive index (folding of GaN
It is 2.5 to penetrate rate, and sapphire refractive index is 1.8), to cause the critical angle in top layer or the total reflection of bottom light-emitting surface too small, light
After reaching top layer or bottom, some light can be totally reflected so that this some light roundtrip or even quilt inside LED
It consumes, greatly reduces light extraction efficiency, so that under high current density, external quantum efficiency (EQE) is very low.
Therefore, the light extraction efficiency of LED how is improved, is the technical issues of this field is urgently to be resolved hurrily.
Invention content
The embodiment of the present invention is the technical problem to be solved is that, provide a kind of light emitting diode and preparation method thereof, illumination
Device, the defects of to overcome existing structure light extraction efficiency low.
In order to solve the above-mentioned technical problem, an embodiment of the present invention provides a kind of light emitting diodes, including substrate and set
Light emitting functional layer over the substrate is put, is provided in the light emitting functional layer for changing the diffusion of light transmission path
Structure.
Optionally, the light emitting functional layer includes the first active layer set gradually over the substrate, Quantum Well, the
Two active layers, ohmic contact layer and conductive layer, the diffuser structure are arranged in the ohmic contact layer.
Optionally, the ohmic contact layer includes the first doped layer and the second doped layer, and first doped layer is arranged on
On second active layer, surface is formed with multiple pyramids of regular array, and second doped layer is arranged on described first
On doped layer, the contact surface between first doped layer and the second doped layer is made to form diffuser structure.
Optionally, first active layer includes N-shaped active layer, and second active layer includes p-type active layer, described
First doped layer includes p-type heavily doped layer, and thickness is 20~500nm, and second doped layer includes N-shaped heavily doped layer, thickness
For 20~500nm.
Optionally, the height of the pyramid is 10~2000nm, alternatively, the height of the pyramid is the λ of 0.1 λ~5,
λ is the wavelength that Quantum Well sends out light.
The embodiment of the present invention additionally provides a kind of lighting device, including aforementioned light emitting diode.
In order to solve the above-mentioned technical problem, the embodiment of the present invention additionally provides a kind of preparation method of light emitting diode, packet
It includes：
Light emitting functional layer is formed on substrate, is formed in the light emitting functional layer for changing light transmission path
Diffuser structure.
Optionally, light emitting functional layer is formed on substrate, is formed in the light emitting functional layer and is transmitted for changing light
The diffuser structure in path, including：
One active layer of growth regulation, Quantum Well, the second active layer successively on substrate；
One doped layer of growth regulation on second active layer carries out wet etching processing, described to the first doped layer
Multiple pyramids of the surface formation rule arrangement of first doped layer；
Two doped layer of growth regulation on first doped layer, makes between first doped layer and the second doped layer
Contact surface forms diffuser structure.
Optionally, wet etching processing is carried out to the first doped layer, including：
The potassium hydroxide or phosphoric acid solution of 4~8mol/L are coated on the surface of the first doped layer, corrodes 2~30min,
Make multiple pyramids of the surface formation rule arrangement of first doped layer, corrosion depth is 10~2000nm, alternatively, rotten
Erosion depth is the λ of 0.1 λ~5, and λ is the wavelength that Quantum Well sends out light
Optionally, one active layer of growth regulation, Quantum Well, the second active layer successively on substrate, including：On substrate according to
Secondary growth N-shaped active layer, Quantum Well, p-type active layer.
Optionally, one doped layer of growth regulation on second active layer, including：Growth thickness is on p-type active layer
The p-type heavily doped layer of 20~500nm.
Optionally, two doped layer of growth regulation on first doped layer, including：The growth thickness on p-type heavily doped layer
N-shaped heavily doped layer for 20~500nm.
The light emitting diode and its manufacturing method and display device that the embodiment of the present invention is provided, by lighting function
Setting diffuser structure, diffuser structure can change light transmission path, reduce what light occurred in LED internal in layer
Total reflection, and then the loss caused by total reflection is reduced, light extraction efficiency is improved, increases external quantum efficiency.At one
In embodiment, diffuser structure is located at tunnel knot interface, influence of the diffuser structure to Ohmic contact quality is reduced, using corruption
The tunnel junction structure of N-shaped heavily doped layer is covered behind the surface of erosion p-type heavily doped layer, LED device surface can be turned
N-shaped heavily doped layer is turned to, reduces the ohmic contact resistance of light emitting diode entirety, is avoided since p-type heavily doped layer carries
The problems such as low caused Ohmic contact contact resistance of sub- concentration is big, contact resistance is unstable is flowed, while simplifies processing step,
Reduce production cost.Technical measure is succinct, with obvious effects, easy to implement, is with a wide range of applications.
Certainly, implement any of the products of the present invention or method it is not absolutely required at the same reach all the above excellent
Point.Other features and advantages of the present invention will illustrate in subsequent specification embodiment, also, partly from specification reality
It applies and becomes apparent in example or understood by implementing the present invention.The purpose of the embodiment of the present invention and other advantages can lead to
Specifically noted structure in specification, claims and attached drawing is crossed to realize and obtain.
Description of the drawings
Attached drawing is used for providing further understanding technical solution of the present invention, and a part for constitution instruction, with this
The embodiment of application technical solution for explaining the present invention together, does not form the limitation to technical solution of the present invention.Attached drawing
In the shapes and sizes of each component do not reflect actual proportions, purpose is schematically illustrate the content of present invention.
Fig. 1 is the structure diagram of light emitting diode of the embodiment of the present invention；
Fig. 2 is the structure diagram of light emitting diode first embodiment of the present invention；
Fig. 3 is that first embodiment of the invention forms the schematic diagram after light emitting structure layer；
Fig. 4 is the schematic diagram after first embodiment of the invention corrosion treatment；
Fig. 5 is that first embodiment of the invention forms the schematic diagram after light emitting functional layer；
Fig. 6 is that first embodiment of the invention forms the schematic diagram after two step surfaces of height；
Fig. 7 is that first embodiment of the invention forms the schematic diagram after first electrode and second electrode；
Fig. 8 is the structure diagram of light emitting diode second embodiment of the present invention；
Fig. 9 is the structure diagram of light emitting diode 3rd embodiment of the present invention.
Reference sign:
1-substrate；2-light emitting functional layer；3-first electrode；
4-second electrode；5-diffuser structure；21-the first contact layer；
22-the first active layer；23-Quantum Well；24-electronic barrier layer；
25-the second active layer；26-p-type heavily doped layer；27-N-shaped heavily doped layer；
28-the second contact layer；29-conductive layer.
Specific embodiment
The specific embodiment of the present invention is described in further detail with reference to the accompanying drawings and examples.Implement below
Example is used to illustrate the present invention, but be not limited to the scope of the present invention.It should be noted that in the absence of conflict, this Shen
Please in embodiment and embodiment in feature mutually can arbitrarily combine.
The defects of in order to overcome existing light emitting diode construction light extraction efficiency low, an embodiment of the present invention provides a kind of hairs
Optical diode.Fig. 1 is the structure diagram of light emitting diode of the embodiment of the present invention.As shown in Figure 1, the main body of light emitting diode
Structure includes substrate 1, sets light emitting functional layer 2 on substrate 1, the first electrode 3 that is arranged in light emitting functional layer 2 and the
Two electrodes 4 are provided with the diffuser structure 5 for changing light transmission path in light emitting functional layer 2.Wherein, substrate 1 is as hair
The substrate of optical diode, first electrode 3 and second electrode 4 are respectively as the contact electrode of light emitting functional layer 2, light emitting functional layer 2
For shining under first electrode 3 and the effect of 4 voltage of second electrode, and pass through diffuser structure 5 therein and change light luminous
The path of functional layer internal transmission.
An embodiment of the present invention provides a kind of light emitting diodes, by setting diffuser structure in light emitting functional layer, diffuse
Structure can change light transmission path, reduce the total reflection that light occurs in LED internal, and then reduce due to complete
Loss caused by reflection, improves light extraction efficiency, increases external quantum efficiency.
Below by the technical solution of specific embodiment the present invention will be described in detail embodiment light emitting diode.
First embodiment
Fig. 2 is the structure diagram of light emitting diode first embodiment of the present invention.As shown in Fig. 2, the present embodiment shines two
The agent structure of pole pipe includes gallium nitride substrate 1, and the light emitting functional layer 2 being arranged on gallium nitride substrate 1 is arranged on luminous work(
First electrode 3 and second electrode 4 on ergosphere 2, light emitting functional layer 2 are included on gallium nitride substrate 1 the of epitaxial growth successively
One active layer 22, Quantum Well 23, the second active layer 25, ohmic contact layer and conductive layer 29, diffuser structure 5 are arranged on ohm and connect
In contact layer.Wherein, it is arranged on gallium nitride substrate 1 as the first active layer 22 of electron injecting layer, as the quantum for going out photosphere
Trap 23 is arranged on the first active layer 22, and the second active layer 25 as hole injection layer is arranged in Quantum Well 23, for carrying
For carrier hole.Ohmic contact layer and conductive layer 29 are successively set on the second active layer 25, and ohmic contact layer is for making the
Good Ohmic contact is formed between two active layers 25 and first electrode 3.Light emitting functional layer 2 is formed with two step surfaces of height,
First electrode 3 is arranged on the conductive layer 2 of high step surface, and second electrode 4 is arranged on the first active layer 22 of low step surface.
In the present embodiment, ohmic contact layer includes p-type heavily doped layer 26 and N-shaped heavily doped layer 27, p-type heavily doped layer 26 and N-shaped weight
Contact surface between doped layer 27 forms diffuser structure 5, and diffuser structure 5 reduces light and shining for changing light transmission path
The total reflection occurred inside diode, and then the loss caused by total reflection is reduced, light extraction efficiency is improved, is increased
External quantum efficiency.
In the present embodiment, diffuser structure 5 is handled by wet etching and realized.By using potassium hydroxide (KOH) or phosphoric acid
(H3PO4) etc. solution corrosions p-type heavily doped layer 26 surface so that the rib of regular array is presented in the surface of p-type heavily doped layer 26
Taper, such as hexagonal pyramid or 12 pyramid figures form the diffuser structure 5 for changing light transmission path.During work, Quantum Well
23 light sent out occur instead after reaching hexagonal pyramid or 12 pyramid figures between p-type heavily doped layer 26 and N-shaped heavily doped layer 27
It penetrates or reflects, light transmission path changes so that the angle of reflection for being reflected into 1 glazed thread of gallium nitride substrate also changes
Become, the probability for occurring being totally reflected greatly reduces, and reflects extraneous probability and greatly increases, light will not top layer and bottom it
Between back and forth Circulated reflection so that be consumed, thus improve light extraction efficiency, increase external quantum efficiency.
In the present embodiment, the λ of the height h=0.1 λ of hexagonal pyramid or 12 pyramids~5, at this point, light emitting diode goes out light efficiency
Rate is more than twice of traditional structure light extraction efficiency.Wherein, h is distance of the pyramid bottom to top, i.e. p-type heavily doped layer surface
The depth being corroded, λ are the wavelength that Quantum Well sends out light.
In the present embodiment, for the stress that buffer lattice mismatch generates, the light emitting functional layer of the present embodiment can also include
First boundary layer, the first contact layer are arranged between 1 and first active layer 22 of gallium nitride substrate.In order to stop in Quantum Well 23
The electronics of spilling, the light emitting functional layer of the present embodiment can also include electronic barrier layer, and electronic barrier layer is arranged on Quantum Well 23
Between the second active layer 25.In addition, the light emitting functional layer of the present embodiment can also include the second contact layer, the second contact layer
It is arranged between N-shaped heavily doped layer 27 and conductive layer 29.
The technical solution of the present embodiment is further illustrated below by the preparation process of light emitting diode.Wherein, this implementation
Mocvd method may be used in example growth.
(1) the low temperature nitride gallium layer that first growth thickness is 20~30nm on gallium nitride substrate 1, growth temperature for 500~
550 DEG C, growth pressure is 300~700mbar.Then growth thickness is the non-of 1000~2000nm on low temperature nitride gallium layer
Doped gallium nitride layer, growth temperature are 1000~1100 DEG C, and growth pressure is 200~500mbar.Wherein, low temperature nitride gallium layer
As stress release layer, undoped gallium nitride layer as buffer layer, low temperature nitride gallium layer and undoped gallium nitride layer together as
First contact layer 21 of the present embodiment, the stress generated with buffer lattice mismatch.Preferably, the thickness of low temperature nitride gallium layer is
25nm, the thickness of undoped gallium nitride layer is 1500nm.In the present embodiment, substrate of the gallium nitride substrate as light emitting diode,
Thickness is 15~200 μm.
Then, the first active layer 22 that growth thickness is 1000~3000nm on undoped gallium nitride layer.The present embodiment
In, the first active layer 22 is N-shaped active layer, using the gallium nitride of N-shaped doping, as electron injecting layer, growth temperature 1000
~1200 DEG C, growth pressure is 100~500Torr, and impurity is elemental silicon, and doping concentration is 5 × 10l8/cm3.It is preferred that
Ground, the thickness of the first active layer 22 is 2000nm.
Then, the grown quantum trap 23 on the first active layer 22, as the photosphere that goes out of light emitting diode, Quantum Well 23 is wrapped
The InGaN potential well layer of multiple period alternating growths and gallium nitride barrier layer are included, InGaN potential well layer thickness is 1~4nm,
Gallium nitride barrier layer thickness is 3~10nm, and InGaN potential well layer and gallium nitride barrier layer are unintentional doping.Preferably,
The thickness of InGaN potential well layer is 2.5 nm, and the thickness of gallium nitride barrier layer is 5nm, and Quantum Well number is at least 5 periods.
Then, electronic barrier layer 24 is grown in Quantum Well 23.In the present embodiment, electronic barrier layer 24 is used for blocking amount
The electronics overflowed in sub- trap 23, the aluminium gallium nitride alloy adulterated using p-type, thickness are 10~30nm, and dopant is magnesium Mg, and doping is dense
Spend is 3 × 10l9/cm3, the component of aluminium is 0.2 in aluminium gallium nitride alloy, and growth temperature is 950~1000 DEG C, growth pressure for 150~
400mbar.Preferably, the thickness of electronic barrier layer 24 is 20nm.
Then, two active layer 25 of growth regulation on electronic barrier layer 24.In the present embodiment, the second active layer 25 has for p-type
Active layer, the gallium nitride adulterated using p-type, as hole injection layer, for providing carrier hole, thickness is 50~150nm,
Dopant is magnesium Mg, and doping concentration is 3 × 10l9/cm3, growth temperature is 900~1000 DEG C, growth pressure for 100~
500mbar.Preferably, the thickness of the second active layer 25 is 100nm.
After LED techniques by aforesaid standards make, light emitting structure layer is formed on gallium nitride substrate, as shown in Figure 3.
(2) p-type heavily doped layer 26 is grown on the second active layer 25.In the present embodiment, the p-type as tunnel knot lower floor
Heavily doped layer 26 uses p-type heavy blended gallium nitride, and thickness is 20~500nm, and dopant is magnesium Mg, and doping concentration is 1 × 1020/
cm3, growth temperature is 800~900 DEG C, and growth pressure is 100~400mbar.
Then, the potassium hydroxide solution of 4~8mol/L is coated on the surface of p-type heavily doped layer 26, is carried out at corrosion
Reason, etching time are 2~30min, make the surface of p-type heavily doped layer 26 that multiple six ribs of regular array be presented after corrosion treatment
Bullet, as shown in Figure 4.In the present embodiment, height (i.e. corrosion depth) h of hexagonal pyramid is 10~2000nm.Preferably,
Corrosion depth h is 100~800nm.In addition, corrosion depth h can send out the wavelength of light according to Quantum Well to set, corrosion is deep
It spends for the λ of 0.1 λ~5, λ is the wavelength that Quantum Well sends out light.Preferably, corrosion depth h is the λ of 0.5 λ~2.5, and potassium hydroxide is molten
Liquid is 6mol/L.During actual implementation, the solution such as phosphoric acid can also be used, make the surface of p-type heavily doped layer 26 that regular array be presented
Multiple 12 pyramid figures.Gallium nitride material chemical property is stablized, and is not easily decomposed under room temperature, but in potassium hydroxide (KOH) or
Phosphoric acid (H3PO4) can be dissolved in solution, and it is anisotropic to corrode, therefore the multiple of regular array can be presented on its surface
The tapers figure such as hexagonal pyramid or 12 pyramids.
(3) after being cleaned to the surface of p-type heavily doped layer 26, epitaxial growth N-shaped is heavily doped on p-type heavily doped layer 26
Diamicton 27 makes p-type heavily doped layer 26 and N-shaped heavily doped layer 27 form tunnel knot, and p-type heavily doped layer 26 and N-shaped heavily doped layer
Contact surface between 27 forms diffuser structure 5.In the present embodiment, N-shaped heavily doped layer 27 uses N-shaped InGaN, thickness 20
~500nm, dopant are silicon Si, and doping concentration is 1 × 1020/cm3~3 × 1020/cm3, indium In components are 0.1~0.3, raw
Long temperature is 700~900 DEG C, and growth pressure is 100~500mbar.
Then, two contact layer 28 of growth regulation on N-shaped heavily doped layer 27.In the present embodiment, the second contact layer 28 uses n
Type gallium nitride, dopant are silicon Si, and doping concentration is 1 × 1020/cm3~3 × 1020/cm3, growth temperature is 700~900 DEG C,
Growth pressure is 100~500mbar.
Then, it deposits or sputters on the second contact layer 28 and form conductive layer 29.In the present embodiment, conductive layer 29 can be with
Using tin indium oxide ITO or indium zinc oxide IZO, more than 90% can be reached to the transmissivity of visible ray, therefore can improve
The luminous efficiency of light emitting diode.
After previous process makes, light emitting functional layer is formed on gallium nitride substrate, as shown in Figure 5.
(4) conductive layer 29, contact layer 28, N-shaped heavily doped layer 27, p type heavily doped layers are sequentially etched using etching technics
26th, the second active layer 25, electronic barrier layer 24,23 and first active layer 22 of Quantum Well so that light emitting functional layer forms height two
A step surface, as shown in Figure 6.Wherein, the first active layer 22, Quantum Well 23, electronic barrier layer 24, the second active layer 25, p-type
Heavily doped layer 26, N-shaped heavily doped layer 27, contact layer 28 and conductive layer 29 form higher step surface.
(5) finally, it completes first electrode 3 in two step surfaces of light emitting functional layer and second electrode 4 makes, form hair
Optical diode, as shown in Figure 7.Wherein, the side of magnetron sputtering or electron beam evaporation may be used in first electrode 3 and second electrode 4
Method deposits, and titanium-aluminium-titanium-billon or ni-au alloy may be used in material.In the present embodiment, first electrode and second electrode
The material identical of use.During actual implementation, the material that first electrode and second electrode use can also be different.During actual implementation,
The step of can also including forming protective layer, first electrode and second electrode are completely covered protective layer.Wherein, protective layer can
To use paraffin or photoresist.
A kind of light emitting diode is present embodiments provided, corrosion treatment is carried out by the surface to p-type heavily doped layer, makes p
Multiple pyramids of regular array, connecing between p-type heavily doped layer and N-shaped heavily doped layer is presented in the surface of type heavily doped layer
Contacting surface forms diffuser structure, when the light that Quantum Well is sent out reaches the diffuser structure between p-type heavily doped layer and N-shaped heavily doped layer
Reflection occurs or refraction, light transmission path change, the angle of reflection reflexed on gallium nitride substrate also changes, and goes out
The probability being now totally reflected greatly reduces, and reflects extraneous probability and greatly increases, light will not be between top layer and bottom back and forth
Circulated reflection increases external quantum efficiency so that be consumed, thus improve light extraction efficiency.
Since the present embodiment corrodes contact of the diffuser structure to be formed between p-type heavily doped layer and N-shaped heavily doped layer
On face, i.e., positioned at tunnel knot interface, thus reduce influence of the diffuser structure to Ohmic contact quality.The present embodiment uses
The tunnel junction structure of N-shaped heavily doped layer is covered behind the surface of corrosion p-type heavily doped layer, it can be by LED device surface
N-shaped heavily doped layer is converted into, since the contact resistance of N-shaped heavily doped layer is less than the contact resistance of p-type heavily doped layer, thus is subtracted
The small ohmic contact resistance of light emitting diode entirety, avoids ohm caused by p-type heavily doped layer carrier concentration is low
Contact the problems such as contact resistance is big, contact resistance is unstable.Further, since upper table surface has been converted into N-shaped so that up and down
Two step surfaces are N-shaped, therefore identical metal material may be used for coplanar type LED, first electrode and second electrode
Material, simplifies processing step, reduces production cost.The present embodiment technological means is succinct, with obvious effects, easy to implement, has
It is widely applied prospect.
This embodiment scheme is equally applicable to the light emitting diode using sapphire as substrate, similary to have raising LED light extractions
The technique effect of efficiency.Using gallium nitride as substrate, the lattice that can reduce gallium nitride based light emitting diode loses the present embodiment
With degree and dislocation density.
Second embodiment
Fig. 8 is the structure diagram of light emitting diode second embodiment of the present invention.As shown in figure 8, the present embodiment shines two
The agent structure of pole pipe includes gallium nitride substrate 1, and the light emitting functional layer 2 being arranged on gallium nitride substrate 1 is arranged on luminous work(
First electrode 3 and second electrode 4 on ergosphere 2, light emitting functional layer 2 are included on gallium nitride substrate 1 the of epitaxial growth successively
One contact layer 21, the first active layer 22, Quantum Well 23, the second active layer 25 and conductive layer 29, diffuser structure 5 are arranged on first
In contact layer 21.First contact layer 21 includes stress release layer 21a and buffer layer 21b, stress release layer 21a and buffer layer
Contact surface between 21b forms diffuser structure 5, and diffuser structure 5 reduces light in light-emitting diodes for changing light transmission path
It is totally reflected inside pipe, and then reduces the loss caused by total reflection, improved light extraction efficiency, increase outer quantum
Efficiency.
In the present embodiment, stress release layer 21a uses low temperature nitride gallium, and thickness is 20~30nm, and buffer layer 21b is used
Undoped gallium nitride, thickness are 1000~2000nm.Preferably, the thickness of stress release layer 21a is 25nm, buffer layer 21b's
Thickness is 1500nm.Diffuser structure 5 is realized by corrosion stress releasing layer 21a surfaces.By using potassium hydroxide (KOH)
Or phosphoric acid (H3PO4) etc. solution corrosions stress release layer 21a surface so that rule row is presented in the surface of stress release layer 21a
The pyramid of cloth, such as hexagonal pyramid or 12 pyramid figures, subsequent grown buffer layer, in stress release layer 21a and buffer layer
The diffuser structure 5 for changing light transmission path is formed on contact surface between 21b.During work, the light that Quantum Well 23 is sent out reaches
Reflection or refraction, light transmission occur after hexagonal pyramid or 12 pyramid figures between stress release layer 21a and buffer layer 21b
Path changes, and the angle of reflection reflexed on gallium nitride substrate 1 also changes, and the probability for occurring being totally reflected greatly reduces,
Extraneous probability is reflected to greatly increase, will not between top layer and bottom back and forth Circulated reflection so that be consumed, thus
Light extraction efficiency is improved, increases external quantum efficiency.
In the present embodiment, each film layer structure and material are identical with aforementioned first embodiment, can also be in Quantum Well 23 and
Electronic barrier layer is set between two active layers 25, ohmic contact layer and the are set between the second active layer 25 and conductive layer 29
Two contact layers, which is not described herein again.The preparation method of the present embodiment and aforementioned first embodiment are essentially identical, the difference is that
Corrosion treatment is the surface for stress release layer 21a.
Technical solution through this embodiment can be seen that the present embodiment and carry out corruption by the surface to stress release layer
Erosion is handled, and the diffuser structure for changing light transmission path, quantum are formed on the contact surface between stress release layer and buffer layer
Reflection occurs when reaching diffuser structure for the light that trap is sent out or refraction, light transmission path change, and reflexes to gallium nitride substrate
On angle of reflection also change, the probability for occurring being totally reflected greatly reduces, and reflects extraneous probability and greatly increases, will not
Circulated reflection so that be consumed, thus improve light extraction efficiency, increases outer quantum effect back and forth between top layer and bottom
Rate.
3rd embodiment
Fig. 9 is the structure diagram of light emitting diode 3rd embodiment of the present invention.As shown in figure 9, the present embodiment shines two
The agent structure of pole pipe includes gallium nitride substrate 1, and the light emitting functional layer 2 being arranged on gallium nitride substrate 1 is arranged on luminous work(
First electrode 3 and second electrode 4 on ergosphere 2, light emitting functional layer 2 are included on gallium nitride substrate 1 the of epitaxial growth successively
One active layer 22, Quantum Well 23, the second active layer 25, the second contact layer 28 and conductive layer 29, diffuser structure are arranged on second and connect
On contact surface between contact layer 28 and conductive layer 29, diffuser structure 5 reduces light luminous two for changing light transmission path
It is totally reflected inside pole pipe, and then reduces the loss caused by total reflection, improved light extraction efficiency, increase outer amount
Sub- efficiency.
In the present embodiment, the second contact layer 28 using heavy doping gallium nitride, thickness be 10~30nm, doping concentration 1
×1020/cm3~3 × 1020/cm3.Diffuser structure 5 is realized by corroding 28 surface of the second contact layer.By using hydroxide
Potassium (KOH) or phosphoric acid (H3PO4) etc. the second contact layer of solution corrosions 28 surface so that rule are presented in the surface of the second contact layer 28
The pyramid then arranged, such as hexagonal pyramid or 12 pyramid figures.Then deposition conductive layer 29 in the second contact layer 28 and is led
The diffuser structure 5 for changing light transmission path is formed on contact surface between electric layer 29.The light that Quantum Well 23 is sent out to diffusion
Reflection occurs after structure 5 or refraction, light transmission path change, the angle of reflection reflexed on gallium nitride substrate 1 also occurs
Change, the probability for occurring being totally reflected greatly reduces, and reflects extraneous probability and greatly increases, will not be between top layer and bottom
Circulated reflection increases external quantum efficiency so that be consumed, thus improve light extraction efficiency back and forth.
In the present embodiment, each film layer structure and material are identical with aforementioned first embodiment, can gallium nitride substrate 1 with
First contact layer is set between first active layer 22, electronics can also be set to hinder between 23 and second active layer 25 of Quantum Well
Barrier, which is not described herein again.The preparation method of the present embodiment and aforementioned first embodiment are essentially identical, the difference is that corrosion
Processing is the surface for the second contact layer 28.
Technical solution through this embodiment can be seen that the present embodiment and carry out corruption by the surface to the second contact layer
Erosion is handled, and the diffuser structure for changing light transmission path, quantum are formed on the contact surface between the second contact layer and conductive layer
Reflection occurs when reaching diffuser structure for the light that trap is sent out or refraction, light transmission path change, and reflexes to gallium nitride substrate
On angle of reflection also change, the probability for occurring being totally reflected greatly reduces, and reflects extraneous probability and greatly increases, will not
Circulated reflection so that be consumed, thus improve light extraction efficiency, increases outer quantum effect back and forth between top layer and bottom
Rate.Both in addition, while the contact surface between the second contact layer and conductive layer is formed diffuser structure by the present embodiment, increase
Contact area, the binding force both increased has certain help to the promotion of Ohmic contact quality.
During actual implementation, light emitting functional layer of the present invention comprising diffuser structure is not limited to the structure type of previous embodiment,
Various deformation and adjustment can be realized under the technology of the present invention thinking.From the angle for changing light transmission path, diffuser structure can
It between being arranged on two layers of arbitrary neighborhood, can also be arranged in a certain layer, thus can be set according to actual needs
Meter.In addition it is also possible to set reflecting layer in the film layer far from light-emitting surface, reflecting layer combines with diffuser structure to be improved
Light extraction efficiency.
Fourth embodiment
Technical concept based on previous embodiment, the embodiment of the present invention additionally provide a kind of preparation side of light emitting diode
Method.The preparation method of light emitting diode includes：
Light emitting functional layer is formed on substrate, is formed in the light emitting functional layer for changing light transmission path
Diffuser structure.
Wherein, light emitting functional layer is formed on substrate to include：
S1, on substrate one active layer of growth regulation, Quantum Well, the second active layer successively；
S2, one doped layer of growth regulation on second active layer carry out wet etching processing to the first doped layer,
Multiple pyramids of the surface formation rule arrangement of first doped layer；
S3, two doped layer of growth regulation on first doped layer, make between first doped layer and the second doped layer
Contact surface formed diffuser structure.
Wherein, wet etching processing is carried out to the first doped layer in step S2, including：
The potassium hydroxide or phosphoric acid solution of 4~8mol/L are coated on the surface of the first doped layer, corrodes 2~30min,
Make multiple pyramids of the surface formation rule arrangement of first doped layer, corrosion depth is 10~2000nm, alternatively, rotten
Erosion depth is the λ of 0.1 λ~5, and λ is the wavelength that Quantum Well sends out light.
Wherein, first active layer includes N-shaped active layer, and second active layer includes p-type active layer, and described the
One doped layer includes p-type heavily doped layer, and thickness is 20~500nm, and second doped layer includes N-shaped heavily doped layer, and thickness is
20~500nm.
5th embodiment
A kind of lighting device is present embodiments provided, the light emitting diode including previous embodiment.Lighting device can be with
Backlight as display devices such as liquid crystal display panel, LCD TV, liquid crystal display, mobile phone, tablet computers.
In the description of the embodiment of the present invention, it is to be understood that term " middle part ", " on ", " under ", "front", "rear",
The orientation or position relationship of the instructions such as " vertical ", " level ", " top ", " bottom " " interior ", " outer " be based on orientation shown in the drawings or
Position relationship is for only for ease of the description present invention and simplifies description rather than instruction or imply that signified device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In the description of the embodiment of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace
Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integrated
Ground connects；Can be mechanical connection or electrical connection；It can be directly connected, the indirect phase of intermediary can also be passed through
Even, can be the connection inside two elements.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in the present invention.
Although disclosed herein embodiment as above, the content only for ease of understanding the present invention and use
Embodiment, be not limited to the present invention.Technical staff in any fields of the present invention, is not departing from the present invention
Under the premise of disclosed spirit and scope, any modification and variation, but this can be carried out in the form and details of implementation
The scope of patent protection of invention, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of light emitting diode, which is characterized in that described including light emitting functional layer substrate and setting over the substrate
It is provided in light emitting functional layer for changing the diffuser structure of light transmission path.
2. light emitting diode according to claim 1, which is characterized in that the light emitting functional layer is included over the substrate
The first active layer, Quantum Well, the second active layer, ohmic contact layer and the conductive layer set gradually, the diffuser structure are arranged on
In the ohmic contact layer.
3. light emitting diode according to claim 2, which is characterized in that the ohmic contact layer include the first doped layer and
Second doped layer, first doped layer are arranged on second active layer, and surface is formed with multiple pyramids of regular array
Shape, second doped layer are arranged on first doped layer, make connecing between first doped layer and the second doped layer
Contacting surface forms diffuser structure.
4. light emitting diode according to claim 3, which is characterized in that first active layer includes N-shaped active layer, institute
It states the second active layer and includes p-type active layer, first doped layer includes p-type heavily doped layer, and thickness is 20~500nm, described
Second doped layer includes N-shaped heavily doped layer, and thickness is 20~500nm.
5. light emitting diode according to claim 3 or 4, which is characterized in that the height of the pyramid for 10~
2000nm, alternatively, the height of the pyramid is the λ of 0.1 λ~5, λ is the wavelength that Quantum Well sends out light.
6. a kind of lighting device, which is characterized in that including the light emitting diode as described in Claims 1 to 5 is any.
7. a kind of preparation method of light emitting diode, which is characterized in that including：
Light emitting functional layer is formed on substrate, and the diffusion knot for changing light transmission path is formed in the light emitting functional layer
Structure.
8. preparation method according to claim 7, which is characterized in that light emitting functional layer is formed on substrate, it is described to shine
It is formed in functional layer for changing the diffuser structure of light transmission path, including：
One active layer of growth regulation, Quantum Well, the second active layer successively on substrate；
One doped layer of growth regulation on second active layer carries out wet etching processing, described first to the first doped layer
Multiple pyramids of the surface formation rule arrangement of doped layer；
Two doped layer of growth regulation on first doped layer, makes the contact surface between first doped layer and the second doped layer
Form diffuser structure.
9. preparation method according to claim 8, which is characterized in that wet etching processing, packet are carried out to the first doped layer
It includes：
The potassium hydroxide or phosphoric acid solution of 4~8mol/L are coated on the surface of the first doped layer, corrodes 2~30min, is made described
Multiple pyramids of the surface formation rule arrangement of first doped layer, corrosion depth is 10~2000nm, alternatively, corrosion depth is
0.1 λ~5 λ, λ are the wavelength that Quantum Well sends out light.
10. preparation method according to claim 8 or claim 9, which is characterized in that
One active layer of growth regulation, Quantum Well, the second active layer successively on substrate, including：Growing n-type is active successively on substrate
Layer, Quantum Well, p-type active layer；
One doped layer of growth regulation on second active layer, including：Growth thickness is the p of 20~500nm on p-type active layer
Type heavily doped layer；
Two doped layer of growth regulation on first doped layer, including：Growth thickness is 20~500nm on p-type heavily doped layer
N-shaped heavily doped layer.
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| WO2020011117A1 (en) * | 2018-07-12 | 2020-01-16 | 江西兆驰半导体有限公司 | Ultraviolet light emitting diode chip for improving light extraction efficiency, and manufacturing method therefor |
| CN112786751A (en) * | 2021-01-19 | 2021-05-11 | 中国科学院长春光学精密机械与物理研究所 | N-polar nitride template, N-polar nitride device and preparation method thereof |
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| US20130134464A1 (en) * | 2011-11-29 | 2013-05-30 | Genesis Photonics Inc. | Light emitting diode device and flip-chip packaged light emitting diode device |
| CN104617195A (en) * | 2015-02-06 | 2015-05-13 | 扬州乾照光电有限公司 | Near infrared LED and production method thereof |
| CN108110106A (en) * | 2017-12-14 | 2018-06-01 | 扬州乾照光电有限公司 | The preparation method and LED chip of a kind of LED chip |
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| US20130134464A1 (en) * | 2011-11-29 | 2013-05-30 | Genesis Photonics Inc. | Light emitting diode device and flip-chip packaged light emitting diode device |
| CN104617195A (en) * | 2015-02-06 | 2015-05-13 | 扬州乾照光电有限公司 | Near infrared LED and production method thereof |
| CN108110106A (en) * | 2017-12-14 | 2018-06-01 | 扬州乾照光电有限公司 | The preparation method and LED chip of a kind of LED chip |
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| WO2020011117A1 (en) * | 2018-07-12 | 2020-01-16 | 江西兆驰半导体有限公司 | Ultraviolet light emitting diode chip for improving light extraction efficiency, and manufacturing method therefor |
| CN112786751A (en) * | 2021-01-19 | 2021-05-11 | 中国科学院长春光学精密机械与物理研究所 | N-polar nitride template, N-polar nitride device and preparation method thereof |
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