CN108231817A - A kind of low-power consumption charge coupling device based on two-dimensional material/insulating layer/semiconductor structure - Google Patents
A kind of low-power consumption charge coupling device based on two-dimensional material/insulating layer/semiconductor structure Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of low-power consumption charge coupling devices based on two-dimensional material/insulating layer/semiconductor structure, several pixels including forming array, pixel include grid, Semiconductor substrate, insulating layer, source electrode, drain electrode and two-dimensional material film layer successively from bottom to top；Source electrode and drain electrode horizontal interval is arranged in the upper surface of insulating layer；Two-dimensional material film layer be covered in source electrode, drain electrode and its between insulating layer upper surface.Incident light is irradiated to the charge coupling device surface of the present invention, is absorbed by Semiconductor substrate.Due to the special nature of two-dimensional material, it can effectively collect carrier by capacitive coupling, the photo-signal of generation is directly from single pixel structure output, realize local reading, random read take, without horizontal transfer charge mode between pixel, fundamentally change the signal playback mode of charge coupling device, improve system Whole Response speed, linear dynamic range and reliability.Two-dimensional material hetero-junctions can effectively reduce device dark current.
Description
Technical field
The invention belongs to image sensor technologies fields, are related to image sensor devices structure more particularly to one kind is based on
The low-power consumption charge coupling device of two-dimensional material/insulating layer/semiconductor structure.
Background technology
Charge coupling device (CCD) imaging sensor can directly convert optical signals into analog current signal, electric current letter
Number by amplification and analog-to-digital conversion, realize acquisition, storage, transmission, processing and the reproduction of image.It can be according to being radiated at its face
On light generate corresponding charge signal, it is this in the digital signal that " 0 " or " 1 " are converted by analog-digital converter chip
Digital signal can preserve i.e. receipts optical signal by flash memory or hard disk card and be converted into computer after overcompression and program arrangement
The electronic image signal that can be identified can carry out testee accurately to measure, analyze.Traditional CCD is sensed with cmos image
Device compare have better image quality, but due to CCD by the way of charge lateral transport between pixel output data, system
Whole Response speed it is slow, as long as and wherein there are one pixel transmission break down, the data that may result in an entire row can not
Normal transmission, therefore control the yields of CCD more difficult.
Graphene is the cellular two dimensional surface crystal film being made of individual layer sp2 hydbridized carbon atoms, have excellent power,
The performances such as heat, light, electricity.Different from common metal, graphene is a kind of with transparent and flexible New Two Dimensional conductive material.Stone
It black alkene and is covered in semiconductor oxide piece and may be constructed simple fet structure, preparation process is simple, is easily transferred to any
On substrate.Since graphene translucency is very high, the quantum efficiency of Traditional photovoltaic device can be improved.
Two-dimensional semiconductor film refers to that electronics only can the free movement on the non-nanosize (1-100nm) of two dimensions
The material of (plane motion), such as nano thin-film, superlattices, Quantum Well.Two-dimensional semiconductor film is along with Man Qiesi in 2004
Especially big Geim groups are successfully separated out the graphene of monoatomic layer and propose, the two dimension half be successfully separated at present, prepared
Conductor thin film has tens kinds, including black phosphorus, transient metal sulfide etc..Breakthrough tradition CCD is given in the discovery of two-dimensional semiconductor film
Limitation bring chance.
Invention content
In order to solve the above technical problems, present invention offer is a kind of based on the low of two-dimensional material/insulating layer/semiconductor structure
Power consumption charge coupling device.
A kind of low-power consumption charge coupling device based on two-dimensional material/insulating layer/semiconductor structure of the present invention, including group
Into several pixels of array, the pixel includes grid, Semiconductor substrate, insulating layer, source electrode, drain electrode and two successively from bottom to top
Tie up material film layers；The source electrode and the drain electrode horizontal interval are arranged in the upper surface of the insulating layer；The two-dimensional material
Film layer be covered in the source electrode, drain electrode and its between insulating layer upper surface；The two-dimensional material film layer includes two kinds
More than two-dimensional material forms hetero-junctions between different two-dimensional materials.
As preferred technical solution, the two-dimensional material film layer is made of graphene film and two-dimensional semiconductor film
Hetero-junctions, the graphene film are divided to two sections to be respectively overlay in the source electrode, in drain electrode, pass through two among two sections of graphene films
Semiconductive thin film connection is tieed up, forms two schottky junctions.
As preferred technical solution, the two-dimensional semiconductor film be black phosphorus film or transient metal sulfide film,
Transient metal sulfide film has molybdenum disulfide, tungsten disulfide or two tungsten selenides etc..
As preferred technical solution, is semiconductor is lightly doped in the Semiconductor substrate.
As preferred technical solution, the Semiconductor substrate is N-shaped lightly-doped silicon, and insulating layer is silica.
As preferred technical solution, drain region, the buried channel are provided between the Semiconductor substrate and insulating layer
Layer is adulterated for N-shaped, and the Semiconductor substrate is adulterated for p-type.
As preferred technical solution, the Semiconductor substrate is partly led for low energy gap width semiconductor or broad stopband width
Body.
As preferred technical solution, the insulating layer material low for Ultroviolet absorptivity or high-k are situated between
Matter.
As preferred technical solution, light injects the charge coupling device by lower section.
The operation principle of two-dimensional material film is in the application：Two-dimensional material forms MIS knots with insulating layer, Semiconductor substrate
Structure, as gate voltage gradually increases, silicon base will enter spent condition from electron accumulation.If grid voltage is sufficiently large, semiconductor-insulator
Bed boundary will form hole inversion layer.But if grid voltage is pulse signal, and needs certain longevity is generated due to minority carrier
The time is ordered, will not occur inversion layer immediately, still maintains that (thickness ratio that exhausts at this moment is maximally depleted thickness for the state that exhausts
Degree is also big)；What this majority carrier had been depleted completely, it should occur and not occur the semiconductor of inversion layer for the moment
Surface state, referred to as deep spent condition.Into deep spent condition, width of depletion region increase.When incident light is irradiated to device area,
Silicon depletion region absorbs incident light and simultaneously generates electron-hole pair, and quantum efficiency is close to 100%；If Semiconductor substrate is N-shaped,
Electron stream is collected by two-dimensional material under high speed grid electric field action, and the fermi level of two-dimensional material is caused to rise.Due to two-dimensional material
Special band structure, conductance can corresponding proportional variation.After applying fixed bias to two-dimensional material in this way, pass through two
The electric current of dimension material can synchronize the quantity of electric charge for reflecting potential well memory storage, and be read without repeatedly transfer.
Charge coupled array is widely used, such as imaging and monitoring.The application is based on two-dimensional material/insulation
The low-power consumption charge coupling device of layer/semiconductor structure can use standard semi-conductor processes to make photodetector array.It is logical
Cross terminal conjunction method, with gold thread or metal interconnecting wires the top electrode of each element in charge coupled array with it is traditional
The electrode of signal processing circuit connects, and all of photodetector array can be obtained using traditional signal processing circuit
The data of CCD pixel.
Pulse grid voltage is added to the charge coupling device of the application so that it can exhaust working condition into deep, realizes photon
It absorbs.Source electrode and drain electrode directly applies fixed-bias transistor circuit, realizes nondestructive readout of the charge in two-dimensional material in potential well.Wherein grid electricity
The cathode of pressure is connected on the grid of device, and the anode of gate voltage is connected on the source electrode of charge coupling device, in source electrode and leakage
Between pole plus 1V is biased, as shown in Figure 1.
The present invention a kind of low-power consumption charge coupling device based on two-dimensional material/insulating layer/semiconductor structure have with
Lower advantageous effect：
1. incident light is irradiated to the application charge coupling device surface, absorbed by two-dimensional material and Semiconductor substrate.Pulse
Bias is added to device back-gate electrode, and Semiconductor substrate enters deep spent condition, in photo-generated carrier (the hole electricity that depletion layer generates
Son to) detach under device inside electric field action, electronics is collected by two-dimensional material, so as to form larger photo-signal, tool
There is larger linear dynamic range；
2. two-dimensional material cost of material is relatively low, device architecture is simple, is easy to manufacture on a large scale, and compatible with CMOS technology；
3. two-dimensional material enhances absorbing incident light, compared to traditional polysilicon electrode, greatly improves as transparent electrode
Conventional charge coupled apparatus has widened the response spectrum of imaging sensor in ultraviolet and quantum efficiency of infrared band；
4. due to the special nature of two-dimensional material, carrier, the photoelectricity of generation can effectively be collected by capacitive coupling
Signal is flowed directly from single pixel structure output, local reading, random read take is realized, without horizontal transfer charge between pixel
Mode fundamentally changes the signal playback mode of charge coupling device, improves system Whole Response speed, linear dynamic range
And reliability；
5. two-dimensional material hetero-junctions can reduce dark current to 1nA hereinafter, correspondingly also reducing the work(of charge coupling device
Consumption.
Description of the drawings
Fig. 1 is the structure diagram of the charge coupling device in embodiment 1-6；
Fig. 2 is the response curve under the 532nm laser of different capacity in single gate pulse voltage cycle；
Fig. 3 is operated in 0~-30V for charge coupling device, and duty ratio is 532nm, light under 20% 1kHz pulse grid voltages
Energy is 0~120mW/cm2The optical response plot of laser and its in light energy in 0~4mW/cm2Curve graph；
Fig. 4 is within a gate voltage pulse period, and the photoresponse with the 1550nm laser irradiation devices of varying strength is bent
Line chart；
Fig. 5 is the structure diagram of the charge coupling device in embodiment 6.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1
As shown in Figure 1, a kind of low-power consumption charge coupling based on two-dimensional material/insulating layer/semiconductor structure of the present embodiment
Clutch part, several pixels including forming array, pixel include grid 1, N-shaped lightly-doped silicon Semiconductor substrate successively from bottom to top
2nd, silicon dioxide insulating layer 3, source electrode 4, drain electrode 5 and two-dimensional material film layer；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in dioxy
The upper surface of SiClx insulating layer 3；Two-dimensional material film layer be covered in source electrode 4, drain electrode 5 and its between silicon dioxide insulating layer 3
Upper surface；Two-dimensional material film layer includes being made of graphene film 6 and molybdenum disulfide film 7, and graphene film 6 is divided to two sections
Be respectively overlay in source electrode 4, drain electrode 5 on, connected among two sections of graphene films 6 by molybdenum disulfide film 7, formed two Xiao Te
Base junction reduces dark current.
Wherein, the material for making grid 1 is gallium-indium alloy, and the thickness of N-shaped lightly-doped silicon Semiconductor substrate 2 is 300~500
μm, resistivity is 1~10 Ω cm, and the thickness of silicon dioxide insulating layer 3 is 10~100nm, source electrode 4 and 5 material therefors that drain
For chrome gold alloy, the size of graphene film 6 is 60 μm of 60 μ m, and the size of molybdenum disulfide film 7 is 40 μm of 40 μ m, two
The overlapping region size of person is 10 μm of 40 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge in two-dimensional material in potential well.Wherein
The cathode of gate voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source
Between pole 4 and drain electrode 5 plus 1V is biased, as shown in Figure 1.
Since conductance of the read output signal dependent on two-dimensional material changes, the charge coupling device of the present embodiment is compared to biography
The CCD device of system has higher dark current and power consumption.Stone is replaced by using the hetero-junctions that graphene+two-dimensional semiconductor film is formed
The mode of black alkene reduces the dark current of device, reduces device power consumption.Since the size of release liner limits, charge coupling device ruler
It is very little usually in 20~80 μm of magnitudes.Due to foring graphene-semiconductor-transition metal-graphene between source electrode 4 and drain electrode 5
MSM hetero-junctions, dark current can be suppressed to 1nA or so, and the power consumption of background can be greatly reduced to the magnitude of 1nW.
When there is photo-generated carrier to be transferred in graphene, the potential barrier for the schottky junction that graphene is formed with transient metal sulfide is high
Degree can reduce, so as to cause the unexpected increase of photoelectric current.The charge coupling device is in single gate pulse voltage cycle, different work(
Response under the 532nm laser of rate is as shown in Figure 2.
The method for preparing above-mentioned charge coupling device pixel, includes the following steps：
(1) in the upper surface oxidation growth silicon dioxide insulating layer 3 of N-shaped lightly-doped silicon Semiconductor substrate 2, N-shaped used is light
The resistivity for adulterating silicon semiconductor substrate 2 is 1~10 Ω cm；The thickness of silicon dioxide insulating layer 3 is 100nm~200nm, raw
Long temperature is 900~1200 DEG C；
(2) go out the figure of top electrode sum in 3 photomask surface of silicon dioxide insulating layer, then using electron beam evaporation technique,
Then the chromium adhesion layer source electrode 4 that growth thickness is about 5nm first grows the gold electrode drain electrode 5 of 60nm；
(3) two are covered each by the upper surface of the upper surface of top electrode (source electrode 4 and drain electrode 5) and silicon dioxide insulating layer 3
A graphene film 6；Wherein, the transfer method of transient metal sulfide film 7 is：It is formed sediment with chemical vapor deposition or physical vapor
Product method generation single-layer or multi-layer transient metal sulfide, and silicon oxidation on piece is transferred into, silicon chip is imitated in 60 DEG C of heat
On plate, transient metal sulfide film 7 is uncovered to the PC films that PDMS is substrate, is transferred on target devices, with 80 DEG C
Melt PC, PC glue is washed away with chloroform soln, then shift one layer of boron nitride pellicle as protective layer by the use of same method；
(4) it is prepared at 2 back side of N-shaped lightly-doped silicon Semiconductor substrate and 2 Ohmic contact of N-shaped lightly-doped silicon Semiconductor substrate
Metal gates 1.
The charge coupling device of the present embodiment uses N-shaped lightly-doped silicon Semiconductor substrate 2, and gate voltage is operated in 0~-30V,
Duty ratio is under 20% 1kHz pulse grid voltages, and 532nm, light energy are 0~120mW/cm2The optical response plot of laser and its
In light energy in 0~4mW/cm2Curve graph it is as shown in Figure 3.From figure 3, it can be seen that prepared device is in 0~4mW/cm2Tool
There is the good linearity；And photoelectric current is larger, it was demonstrated that device can be applied to image sensor array.
More than structure is based on, larger response is generated in infrared band using the interfacial state of silicon-silica, improves Charged Couple
The responsiveness of device.
Semiconductor substrate 2 used be N-shaped lightly-doped silicon, insulating layer 3 be silica, the interface between silicon and silica
State can absorb infrared light and generate electron hole pair, and being transferred to makes the conductance of graphene generate variation in graphene, finally lead
Cause the output current variation on graphene.Although the quantum efficiency that interfacial state absorbs infrared light is extremely low, since the charge of CCD accumulates
It is allocated as using and the gain effect of graphene itself, can still obtain larger response.As shown in figure 4, in a gate voltage
In pulse period, with the 1550nm laser irradiation devices of varying strength, it is seen that it is responded significantly, and responsiveness is about 50mA/W, is
50 times of commercial infrared probe.Its response wave length scope is surveyed as 200~2000nm.
Embodiment 2
As shown in Figure 1, a kind of low-power consumption charge coupling based on two-dimensional material/insulating layer/semiconductor structure of the present embodiment
Clutch part, include composition array several pixels, pixel from bottom to top successively include grid 1, low energy gap width semiconductor 2, absolutely
Edge layer 3, source electrode 4, drain electrode 5 and two-dimensional material film layer；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in the upper surface of insulating layer 3；
Two-dimensional material film layer be covered in source electrode 4, drain electrode 5 and its between insulating layer 3 upper surface；Two-dimensional material film layer include by
Graphene film 6 and black phosphorus film 7 are formed, graphene film 6 be divided to two sections be respectively overlay in source electrode 4, drain electrode 5 on, two sections of graphite
It is connected among alkene film 6 by black phosphorus film 7, forms two schottky junctions, reduce dark current.
Wherein, the material for making grid 1 is gallium-indium alloy, and low energy gap width semiconductor 2 is using germanium Ge, indium gallium arsenic InGaAs
Or group Ⅲ-Ⅴ compound semiconductor, thickness are 300~500 μm, resistivity is 1~10 Ω cm, and the thickness of insulating layer 3 is
10~100nm, source electrode 4 and 5 material therefors of drain electrode are chrome gold alloy, and the size of graphene film 6 is 30 μm of 30 μ m, black phosphorus
The size of film 7 is 20 μm of 20 μ m, and the overlapping region size of the two is 5 μm of 20 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
The charge coupling device structure of the present embodiment replaces low energy gap width semiconductor and generates larger sound in infrared band
It answers, improves the responsiveness of charge coupling device.
It can be realized in a variety of semiconductors due to exhausting this state deeply.Therefore Semiconductor substrate 2 is used into narrow taboo
Bandwidth semiconductor such as germanium Ge, indium antimonide InSb, indium gallium arsenic InGaAs, group Ⅲ-Ⅴ compound semiconductor etc., these semiconductors can
Directly to absorb infrared photon, larger responsiveness and quantum efficiency can be generated.But it should be noted that semiconductor-insulator
Bed boundary should have good interfacial characteristics, flood optical response signal to prevent heat from generating excessive velocities.Infrared band can
To extend to 5 μm or more.
Embodiment 3
As shown in Figure 1, a kind of low-power consumption charge coupling based on two-dimensional material/insulating layer/semiconductor structure of the present embodiment
Clutch part, include composition array several pixels, pixel from bottom to top successively include grid 1, wide bandgap semiconductor 2, absolutely
Edge layer 3, source electrode 4, drain electrode 5 and two-dimensional material film layer；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in the upper surface of insulating layer 3；
Two-dimensional material film layer be covered in source electrode 4, drain electrode 5 and its between insulating layer 3 upper surface；Two-dimensional material film layer include by
Graphene film 6 and black phosphorus film 7 are formed, graphene film 6 be divided to two sections be respectively overlay in source electrode 4, drain electrode 5 on, two sections of graphite
It is connected among alkene film 6 by black phosphorus film 7, forms two schottky junctions, reduce dark current.
Wherein, the material for making grid 1 is gallium-indium alloy, and wide bandgap semiconductor 2 uses gallium nitride GaN or silicon carbide
SiC, thickness are 300~500 μm, and resistivity is 1~10 Ω cm, and the thickness of insulating layer 3 is 10~100nm, source electrode 4 and leakage
5 material therefor of pole is chrome gold alloy, and the size of graphene film 6 is 30 μm of 30 μ m, and the size of black phosphorus film 7 is 20 μ ms
20 μm, the overlapping region size of the two is 5 μm of 20 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
More than structure is based on, wide bandgap semiconductor is replaced and generates larger response in ultraviolet band, improve Charged Couple
The responsiveness of device makes charge coupling device only absorb the light of ultraviolet band.
It can be realized in a variety of semiconductors due to exhausting this state deeply.Therefore Semiconductor substrate 2 is prohibited using wide
Bandwidth semiconductor such as gallium nitride GaN, silicon carbide SiC etc., these semiconductors can directly absorb ultraviolet photon, can generate compared with
Big responsiveness and quantum efficiency.But it should be noted that semiconductor-insulator bed boundary should have good interfacial characteristics,
Optical response signal is flooded to prevent heat from generating excessive velocities, reduces the interference of visible ray.
Embodiment 4
As shown in Figure 1, a kind of low-power consumption charge coupling based on two-dimensional material/insulating layer/semiconductor structure of the present embodiment
Clutch part, several pixels including forming array, pixel include grid 1, Semiconductor substrate 2, ultraviolet light and inhale successively from bottom to top
Receive insulating layer 3, source electrode 4, drain electrode 5 and two-dimensional material film layer made of the low material of coefficient；5 horizontal intervals of source electrode 4 and drain electrode
It is arranged in the upper surface of insulating layer 3 made of the low material of Ultroviolet absorptivity；Two-dimensional material film layer be covered in source electrode 4,
Drain electrode 5 and its between the low material of Ultroviolet absorptivity made of insulating layer 3 upper surface；Two-dimensional material film layer includes
Be made of graphene film 6 and tungsten disulfide film 7, graphene film 6 be divided to two sections be respectively overlay in source electrode 4, drain electrode 5 on, two
It is connected among section graphene film 6 by tungsten disulfide film 7, forms two schottky junctions, reduce dark current.
Wherein, the material for making grid 1 is gallium-indium alloy, and the thickness of Semiconductor substrate 2 is 300~500 μm, and resistivity is
1~10 Ω cm, the thickness of insulating layer 3 made of the low material of Ultroviolet absorptivity are 10~100nm, source electrode 4 and drain electrode 5
Material therefor is chrome gold alloy, and the size of graphene film 6 is 60 μm of 60 μ m, and the size of tungsten disulfide film 7 is 40 μ ms
40 μm, the overlapping region size of the two is 10 μm of 40 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
Since the translucency of graphene is preferable, the reflectivity of ultraviolet light can be reduced from design by improving ultraviolet response,
From the point of view of insulating layer is reduced to the absorption of ultraviolet light, the responsiveness in ultraviolet band of charge coupling device is improved.It is based on
Silica is larger to the absorption of ultraviolet light, selects the insulating layer material to Ultroviolet absorptivity bottom, such as using silicon nitride or
The insulating layer material less to ultraviolet band light absorption such as high dielectric constant material.
Embodiment 5
As shown in Figure 1, a kind of low-power consumption charge coupling based on two-dimensional material/insulating layer/semiconductor structure of the present embodiment
Clutch part, several pixels including forming array, it is normal that pixel includes grid 1, Semiconductor substrate 2, high dielectric successively from bottom to top
Insulating layer 3, source electrode 4, drain electrode 5 and two-dimensional material film layer made of number medium；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in height
The upper surface of insulating layer 3 made of dielectric constant dielectric；Two-dimensional material film layer be covered in source electrode 4, drain electrode 5 and its between height
The upper surface of insulating layer 3 made of dielectric constant dielectric；Two-dimensional material film layer includes thin by 6 and two tungsten selenide of graphene film
Film 7 is formed, graphene film 6 be divided to two sections be respectively overlay in source electrode 4, drain electrode 5 on, pass through two selenium among two sections of graphene films 6
Change W film 7 to connect, form two schottky junctions, reduce dark current.
Wherein, the material for making grid 1 is gallium-indium alloy, and the thickness of Semiconductor substrate 2 is 300~500 μm, and resistivity is
1~10 Ω cm, the thickness of insulating layer 3 made of high dielectric constant are 10~100nm, source electrode 4 and 5 material therefors that drain
For chrome gold alloy, the size of graphene film 6 is 30 μm of 30 μ m, and the sizes of two selenizing W films 7 is 20 μm of 20 μ m, two
The overlapping region size of person is 5 μm of 20 μ m.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 1.
Insulating layer made of high dielectric constant has enhancing capacitance coupling effect, the work for reducing grid voltage, reducing power consumption
With.
Embodiment 6
As shown in Figure 5, a kind of low-power consumption charge coupling based on two-dimensional material/insulating layer/semiconductor structure of the present embodiment
Clutch part, include composition array several pixels, pixel from bottom to top successively include grid 1, p-type dope semiconductor substrates 2, absolutely
Edge layer 3, source electrode 4, drain electrode 5 and two-dimensional material film layer；Source electrode 4 and 5 horizontal intervals of drain electrode are arranged in the upper surface of insulating layer 3；
Two-dimensional material film layer be covered in source electrode 4, drain electrode 5 and its between insulating layer 3 upper surface；Two-dimensional material film layer include by
Graphene film 6 and molybdenum disulfide film 7 are formed, graphene film 6 be divided to two sections be respectively overlay in source electrode 4, drain electrode 5 on, two sections
It is connected among graphene film 6 by molybdenum disulfide film 7, forms two schottky junctions, reduce dark current, in p-type doping half
The drain region 8 of N-shaped doping is provided between conductor substrate 2 and insulating layer 3.
Wherein, the material for making grid 1 is gallium-indium alloy, and the thickness of p-type dope semiconductor substrates 2 is 300~500 μm,
Resistivity is 1~10 Ω cm, and the thickness of insulating layer 3 is 10~100nm, and source electrode 4 and 5 material therefors of drain electrode are chrome gold alloy,
The size of graphene film 6 is 30 μm of 30 μ m, and the size of molybdenum disulfide film 7 is 20 μm of 20 μ m, the overlapping region of the two
Size is 5 μm of 20 μ m, and the thickness of the drain region 8 of N-shaped doping is 2 μm, and resistivity is 1~10 Ω cm.
Pulse grid voltage is added to the charge coupling device of the present embodiment so that it can exhaust working condition into deep, realizes light
Son absorbs.Source electrode 4 and drain electrode 5 directly apply fixed-bias transistor circuit, realize nondestructive readout of the charge on graphene in potential well.Wherein grid
The cathode of voltage is connected on the grid 1 of device, and the anode of gate voltage is connected on the source electrode 4 of charge coupling device, in source electrode 4
Between drain electrode 5 plus 1V is biased, as shown in Figure 5.
Surface channel CCD can influence the transfer velocity of charge due to the presence of surface state, and the heat in the case of details in a play not acted out on stage, but told through dialogues generates
Higher, and there is one layer of doped layer opposite with Semiconductor substrate doping type on Buried Channel CCD surface, which is completely depleted,
The photogenerated charge of accumulation leaves surface, reduces the dark noise that surface heat generation is brought, improves transfer efficiency, optimize charge coupling
The operating rate of clutch part.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in each embodiment can also be properly combined, forms those skilled in the art
The other embodiment being appreciated that.The N-shaped doping of Semiconductor substrate or other functional layers involved by this specification, p-type are mixed
It is miscellaneous, merely for convenience of description, stated as special case.Doping type (N-shaped is changed to p-type, p-type is changed to N-shaped) is exchanged, is only caused
Device carrier type (electronics or hole) exchanges, the operation principle without influencing device, therefore without departing from this explanation
The range of book.
Claims (9)
1. a kind of low-power consumption charge coupling device based on two-dimensional material/insulating layer/semiconductor structure, if including composition array
Dry pixel, which is characterized in that the pixel include successively from bottom to top grid, Semiconductor substrate, insulating layer, source electrode, drain electrode with
Two-dimensional material film layer；The source electrode and the drain electrode horizontal interval are arranged in the upper surface of the insulating layer；The two dimension material
Material film layer be covered in the source electrode, drain electrode and its between insulating layer upper surface；The two-dimensional material film layer includes two
Kind or more two-dimensional material, form hetero-junctions between different two-dimensional materials.
2. a kind of low-power consumption charge-coupled device based on two-dimensional material/insulating layer/semiconductor structure according to claim 1
Part, which is characterized in that the two-dimensional material film layer forms hetero-junctions, the stone by graphene film and two-dimensional semiconductor film
Black alkene film is divided to two sections to be respectively overlay in the source electrode, in drain electrode, passes through two-dimensional semiconductor film among two sections of graphene films
Connection forms two schottky junctions.
3. a kind of low-power consumption charge-coupled device based on two-dimensional material/insulating layer/semiconductor structure according to claim 2
Part, which is characterized in that the two-dimensional semiconductor film is black phosphorus film or transient metal sulfide film.
4. a kind of low-power consumption charge-coupled device based on two-dimensional material/insulating layer/semiconductor structure according to claim 1
Part, which is characterized in that is semiconductor is lightly doped in the Semiconductor substrate.
5. a kind of low-power consumption charge-coupled device based on two-dimensional material/insulating layer/semiconductor structure according to claim 4
Part, which is characterized in that the Semiconductor substrate is N-shaped lightly-doped silicon, and insulating layer is silica.
6. a kind of low-power consumption charge-coupled device based on two-dimensional material/insulating layer/semiconductor structure according to claim 1
Part, which is characterized in that drain region is provided between the Semiconductor substrate and insulating layer, the drain region is adulterated for N-shaped, institute
Semiconductor substrate is stated to adulterate for p-type.
7. a kind of low-power consumption charge-coupled device based on two-dimensional material/insulating layer/semiconductor structure according to claim 1
Part, which is characterized in that the Semiconductor substrate is low energy gap width semiconductor or wide bandgap semiconductor.
8. a kind of low-power consumption charge-coupled device based on two-dimensional material/insulating layer/semiconductor structure according to claim 1
Part, which is characterized in that the insulating layer material or high dielectric constant low for Ultroviolet absorptivity.
9. a kind of low-power consumption charge-coupled device based on two-dimensional material/insulating layer/semiconductor structure according to claim 1
Part, which is characterized in that light injects the charge coupling device by lower section.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300911A (en) * | 2018-09-11 | 2019-02-01 | 北京大学 | Based on two-dimensional semiconductor hetero-junctions and/or logic gates and its realization and preparation method |
| CN109671627A (en) * | 2018-12-24 | 2019-04-23 | 山东大学 | Reduce the interface processing method of silicon and transient metal sulfide semiconductor Schottky potential barrier |
| CN110767542A (en) * | 2018-07-26 | 2020-02-07 | 中国计量科学研究院 | Two-dimensional material electrical property regulation and control system and regulation and control method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219403A (en) * | 2013-04-19 | 2013-07-24 | 苏州大学 | Optical detector based on two-dimensional stratiform atomic crystal materials |
| KR20140037702A (en) * | 2012-09-19 | 2014-03-27 | 경희대학교 산학협력단 | Transparent electronic devices having 2d transition metal dichalcogenides with multi-layers, optoelectronic device, and transistor device |
| CN105590985A (en) * | 2015-12-31 | 2016-05-18 | 南京大学 | Optoelectronic device based on two-dimensional layered material p-i-n heterojunction |
| CN105742394A (en) * | 2016-02-29 | 2016-07-06 | 北京邮电大学 | Black phosphorus/graphene heterostructure-based ultraviolet detector and production method thereof |
| CN106169511A (en) * | 2015-05-18 | 2016-11-30 | 三星电子株式会社 | Including the semiconductor device of two-dimensional material and the method that manufactures this semiconductor device |
| CN106206710A (en) * | 2016-07-15 | 2016-12-07 | 广东工业大学 | A kind of two-dimensional material HFET, its preparation method and transistor array devices |
-
2018
- 2018-01-29 CN CN201810082620.2A patent/CN108231817A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140037702A (en) * | 2012-09-19 | 2014-03-27 | 경희대학교 산학협력단 | Transparent electronic devices having 2d transition metal dichalcogenides with multi-layers, optoelectronic device, and transistor device |
| CN103219403A (en) * | 2013-04-19 | 2013-07-24 | 苏州大学 | Optical detector based on two-dimensional stratiform atomic crystal materials |
| CN106169511A (en) * | 2015-05-18 | 2016-11-30 | 三星电子株式会社 | Including the semiconductor device of two-dimensional material and the method that manufactures this semiconductor device |
| CN105590985A (en) * | 2015-12-31 | 2016-05-18 | 南京大学 | Optoelectronic device based on two-dimensional layered material p-i-n heterojunction |
| CN105742394A (en) * | 2016-02-29 | 2016-07-06 | 北京邮电大学 | Black phosphorus/graphene heterostructure-based ultraviolet detector and production method thereof |
| CN106206710A (en) * | 2016-07-15 | 2016-12-07 | 广东工业大学 | A kind of two-dimensional material HFET, its preparation method and transistor array devices |
Non-Patent Citations (7)
| Title |
|---|
| SUBBIAH ALWARAPPAN: "《石墨烯基材料 科学与技术》", 30 June 2016, 国防工业出版社 * |
| 卢晓波: "石墨烯_六方氮化硼范德华异质结的制备表征以及电子结构的研究", 《中国博士学位论文全文数据库》 * |
| 张自元: "借助聚合物实现石墨烯转移的技术进展", 《材料导报》 * |
| 戴明金: "石墨烯基二维垂直异质结的制备及光电子器件", 《材料科学与工艺》 * |
| 猪濑博: "《数字电路》", 31 December 1982, 高等教育出版社 * |
| 赵尚弘: "《卫星光通信导论》", 31 December 2015, 西安电子科技大学出版社 * |
| 陈牧: "大面积石墨烯薄膜转移技术研究进展", 《航空材料学报》 * |
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|---|---|---|---|---|
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| CN111509076A (en) * | 2020-04-30 | 2020-08-07 | 华南理工大学 | Self-driven photoelectric detector with low dark current and preparation method thereof |
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