CN108231811A - The microlens array of optical crosstalk between polarization imaging device pixel can be reduced - Google Patents
The microlens array of optical crosstalk between polarization imaging device pixel can be reduced Download PDFInfo
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- 230000010287 polarization Effects 0.000 title claims abstract description 44
- 238000003384 imaging method Methods 0.000 title claims abstract description 27
- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 238000002955 isolation Methods 0.000 claims abstract description 14
- 238000009826 distribution Methods 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 235000007926 Craterellus fallax Nutrition 0.000 description 1
- 240000007175 Datura inoxia Species 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006854 communication Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention proposes a kind of microlens array that can reduce optical crosstalk between polarization imaging device pixel, including pixel array, planarization layer, grating array and microlens array；Pixel array is made of multiple pixels by array format distribution；Grating array is made of multiple sub-wave length gratings by array format distribution；Microlens array is made of multiple lenticules by array format distribution；Its innovation is：The diameter of the lenticule and the diagonal of pixel are isometric；Isolation channel is provided between contiguous microlens, the depth of isolation channel reaches grating array surface.The method have the benefit that：A kind of microlens array for polarization imaging device is proposed, which can effectively reduce the optical crosstalk between pixel.
Description
Technical field
The present invention relates to a kind of polarization imaging device more particularly to a kind of optical crosstalks between reducing polarization imaging device pixel
Microlens array.
Background technology
Conventional imaging techniques generally realize imaging function by capturing wavelength and strength information, are imaged using polarization information
It is then an emerging field of rising in recent years.It is well known that light is substantially a kind of electromagnetic wave, when light is in communication process,
Its electric field oscillation is partial to the polarization characteristic that some direction is light；It is imaged using polarization information, is capable of providing more horn of plenty
Scene information, when light is after body surface reflects, polarization characteristic can occur to change accordingly, thus can therefrom carry
The composition information and surface characteristic of object are taken out, improves the ability of target identification.Existing polarization imaging technology, principle are profits
The electric field oscillation of different directions in incident light is decomposed with the polarizer of multiple and different angles, reuses imaging sensor point
Different polarized components is not acquired, is calculated finally by algorithm and is obtained the polarization informations such as polarization degree and polarization angle, enhancing figure
As recognition capability.Polarization imaging has extensively in fields such as target identification, atmospheric seeing, ground telemetering, medical diagnosis, image defoggings
General application prospect.
Existing polarization imaging device mainly has rotatable polarizer, light path separation and three kinds of point focal plane technical solution；Its
In, rotatable polarizer scheme is one linear polarizer of increase before camera lens, and being driven polarizer by driving device rotates, this
Kind of scheme is relatively simple and cheap, and the secondary complete polarization image of synthesis one needs to rotate to polarizer into multiple angles successively to be obtained step by step
Polarization information is taken, imaging takes very much, and frame per second is relatively low.Light path separation side is by being that multiple cameras are formed array, in each camera
Front installs the polarizer of different directions additional, and the image in different polarization direction that each camera obtains finally is synthesized a secondary complete graph
Picture, this method can obtain the polarization information of different directions simultaneously, but excessive volume makes it lack portability.Divide focal plane
Scheme is that the minitype polarization device of different angle is integrated on the neighbouring pixel of sensitive chip focal plane, each minitype polarization device with
Pixel corresponds, and four pixels with different angle minitype polarization device just constitute a polarization pixel, based on this scheme
Polarization camera there is very high integrated level and Image Acquisition efficiency, thus become the mainstream development side of polarization imaging device
To.
In the prior art, based on the polarization imaging device for dividing focal plane scheme, minitype polarization device generally use sub-wavelength
Grating, sub-wave length grating have the characteristic of analyzing, when the line width of sub-wave length grating is much smaller than incident wavelength, only specific direction
Polarized component could by sub-wave length grating, by be respectively 0 ° by four analyzing angles, 45 °, 90 °, 135 ° of sub-wavelength
Grating and corresponding pixel are combined, and just constitute a polarization function unit；For polarization imaging device, partially
Extinction ratio of shaking is one of its major parameter, and polarization extinction ratio refers to particular polarization light intensity received by pixel with other partially
It shakes the ratio between direction light intensity, since each sub-wave length grating surrounding is the sub-wave length grating of other analyzing angles, thus must be tight
Optical crosstalk between lattice limitation pixel just can guarantee higher polarization extinction ratio, however, since sub-wave length grating is provided simultaneously with spreading out
Characteristic is penetrated, after incident light enters sub-wave length grating, neighbouring pixel can be entered under diffraction, causes optical crosstalk.
Invention content
To solve the problems, such as the optical crosstalk described in background technology, the present invention, which proposes, a kind of can reduce polarization imaging device picture
The microlens array of optical crosstalk between member, including pixel array, planarization layer, grating array and microlens array；The pixel battle array
Row are made of multiple pixels by array format distribution；The grating array is by multiple sub-wave length gratings by array format distribution
Composition；The microlens array is made of multiple lenticules by array format distribution；The planarization layer is arranged on pixel battle array
List face, the grating array are arranged on planarization layer surface, and multiple sub-wave length gratings are corresponded with multiple pixels, described micro-
Lens array is arranged on grating array surface, and multiple lenticules are corresponded with multiple sub-wave length gratings；Corresponding lenticule,
Sub-wave length grating and pixel three are concentric；Its innovation is：The diameter of the lenticule and the diagonal of pixel are isometric；It is adjacent micro-
Isolation channel is provided between lens, the depth of isolation channel reaches grating array surface.
The principle of the present invention is：In the prior art, the diameter of lenticule is generally there are two types of set-up mode, first, making micro-
The diameter of mirror and the length of side of pixel are isometric, second, make lenticule diameter and pixel diagonal it is isometric；The diameter of lenticule with
When the length of side of pixel is isometric, lenticule can only cover sub-wave length grating part, not by lenticule covering on sub-wave length grating
Region can be by incident light direct irradiation, and there are stronger diffraction, diffraction lights can enter in neighbouring pixel to cause light string for corresponding region
It disturbs；When the diameter of lenticule and the isometric diagonal of pixel, the size of single lenticule is more than pixel dimension, contiguous microlens
Edge can interconnect, and incident light can be laterally propagated to by the join domain of contiguous microlens in the pixel of surrounding, cause light
Crosstalk；In the present invention, the diameter of lenticule is set as isometric with the diagonal of pixel, meanwhile, it is set between contiguous microlens
Put isolation channel；This lenticule not only can be by sub-wave length grating all standing, but also can make to be physically isolated between contiguous microlens, by
In sub-wave length grating by all standing, the diffraction at sub-wave length grating edge is weaker, simultaneously as physics between contiguous microlens
Isolation can effectively block the lateral of light to propagate, pass through two aforementioned aspect effects, it is possible to the light string being effectively improved between pixel
It disturbs.
Preferably, the outer width of frame of the sub-wave length grating is denoted as L1, and the width of the isolation channel is calculated as L2, the Asia wave
The screen periods of long grating are denoted as L3；L1, L2 and L3 meet following relationship：L1≤L2≤(L1+2×L3).
Preferably, the microlens array is made of spin-coating glass or polymethyl methacrylate.
Preferably, the planarization layer is made of silica.
The method have the benefit that：A kind of microlens array for polarization imaging device is proposed, this is micro-
Lens array can effectively reduce the optical crosstalk between pixel.
Description of the drawings
The vertical view of Fig. 1, the present invention；
The side sectional view of Fig. 2, the present invention；
Title in figure corresponding to each label is respectively：Pixel 1, planarization layer 2, sub-wave length grating 3, lenticule 4, every
From slot 5, the outline border 6 of sub-wave length grating.
Specific embodiment
A kind of microlens array that can reduce optical crosstalk between polarization imaging device pixel, including pixel array, planarization layer
2nd, grating array and microlens array；The pixel array is made of multiple pixels 1 by array format distribution；The grating battle array
Row are made of multiple sub-wave length gratings 3 by array format distribution；The microlens array presses what array format was distributed by multiple
Lenticule 4 forms；The planarization layer 2 is arranged on pixel array surface, and the grating array is arranged on 2 surface of planarization layer,
Multiple sub-wave length gratings 3 are corresponded with multiple pixels 1, and the microlens array is arranged on grating array surface, multiple micro-
Mirror 4 is corresponded with multiple sub-wave length gratings 3；Corresponding lenticule 4, sub-wave length grating 3 and 1 three of pixel are concentric；It is created
Newly it is：The diagonal of the diameter and pixel 1 of the lenticule 4 is isometric；Isolation channel 5 is provided between contiguous microlens 4, is isolated
The depth of slot 5 reaches grating array surface.
Further, the outer width of frame of the sub-wave length grating 3 is denoted as L1, and the width of the isolation channel 5 is calculated as L2, described
The screen periods of sub-wave length grating 3 are denoted as L3；L1, L2 and L3 meet following relationship：L1≤L2≤(L1+2×L3).
Further, the microlens array is made of spin-coating glass or polymethyl methacrylate.
Further, the planarization layer 2 is made of silica.
When it is implemented, isolation channel 5 can be made after microlens array is made by etching technics；Grating array and
The manufacture craft of microlens array is very ripe, therefore repeats no more herein.
Embodiment：
Prepare the CCD chip that pixel dimension is 7.4 μm；Silicon dioxide film is deposited in CCD chip, using chemically or mechanically
Polishing handles silicon dioxide film, obtains planarization layer 2；The aluminium layer of 200nm is deposited on 2 surface of planarization layer, using electricity
Beamlet photoetching process, it is grating array that aluminium layer, which is etched, and in grating array, the line width of single sub-wave length grating 3 is 140nm, week
Phase is 300nm, outer width of frame is 340nm；In one strata methyl methacrylate of grating array surface spin coating, and it is heating and curing；
Mask photolithographic process is used to etch polymethyl methacrylate for array corresponding with pixel；Heating makes poly-methyl methacrylate
Ester heats, and obtains microlens array；Photoetching is used to etch isolation channel 5 of the width for 800nm between contiguous microlens 4.It is existing
Have in technology, when being not provided with microlens array, optical crosstalk is generally in -19.2dB between polarization imaging device pixel；Lenticule is set
After array, when the diameter of lenticule and the isometric length of side of pixel, between polarization imaging device pixel optical crosstalk generally in -21.5dB,
When the diameter of lenticule and the isometric diagonal of pixel, optical crosstalk is generally in -24.8dB between polarization imaging device pixel；Using this
During scheme of the invention, optical crosstalk can be reduced to -29.8dB between polarization imaging device pixel.
Claims (4)
1. a kind of microlens array that can reduce optical crosstalk between polarization imaging device pixel, including pixel array, planarization layer
(2), grating array and microlens array；The pixel array is made of multiple pixels (1) by array format distribution；The light
Grid array is made of multiple sub-wave length gratings (3) by array format distribution；The microlens array presses array format by multiple
Lenticule (4) composition of distribution；The planarization layer (2) is arranged on pixel array surface, and the grating array is arranged on flat
Change layer (2) surface, multiple sub-wave length gratings (3) correspond with multiple pixels (1), and the microlens array is arranged on grating battle array
List face, multiple lenticules (4) correspond with multiple sub-wave length gratings (3)；Corresponding lenticule (4), sub-wave length grating
(3) and pixel (1) three is concentric；It is characterized in that：The diagonal of the diameter and pixel (1) of the lenticule (4) is isometric；It is adjacent
Isolation channel (5) is provided between lenticule (4), the depth of isolation channel (5) reaches grating array surface.
2. the microlens array according to claim 1 that can reduce optical crosstalk between polarization imaging device pixel, feature exist
In：The outer width of frame of the sub-wave length grating (3) is denoted as L1, and the width of the isolation channel (5) is calculated as L2, the sub-wave length grating
(3) screen periods are denoted as L3；L1, L2 and L3 meet following relationship：L1≤L2≤(L1+2×L3).
3. the microlens array according to claim 1 that can reduce optical crosstalk between polarization imaging device pixel, feature exist
In：The microlens array is made of spin-coating glass or polymethyl methacrylate.
4. the microlens array according to claim 1 that can reduce optical crosstalk between polarization imaging device pixel, feature exist
In：The planarization layer (2) is made of silica.
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| CN201810062611.7A CN108231811A (en) | 2018-01-23 | 2018-01-23 | The microlens array of optical crosstalk between polarization imaging device pixel can be reduced |
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| CN201810062611.7A CN108231811A (en) | 2018-01-23 | 2018-01-23 | The microlens array of optical crosstalk between polarization imaging device pixel can be reduced |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108807447A (en) * | 2018-08-03 | 2018-11-13 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110504279A (en) * | 2019-08-30 | 2019-11-26 | Oppo广东移动通信有限公司 | A kind of polarization type CIS, image processing method and storage medium and terminal device |
| US20220086321A1 (en) * | 2020-09-15 | 2022-03-17 | Micron Technology, Inc. | Reduced diffraction micro lens imaging |
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