CN108206154B - Grain positioning method and production equipment applied to fan-out process - Google Patents
Grain positioning method and production equipment applied to fan-out process Download PDFInfo
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- CN108206154B CN108206154B CN201611176367.4A CN201611176367A CN108206154B CN 108206154 B CN108206154 B CN 108206154B CN 201611176367 A CN201611176367 A CN 201611176367A CN 108206154 B CN108206154 B CN 108206154B
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000005553 drilling Methods 0.000 claims abstract description 68
- 239000013078 crystal Substances 0.000 claims abstract description 51
- 238000007689 inspection Methods 0.000 claims abstract description 25
- 238000010191 image analysis Methods 0.000 claims abstract description 20
- 239000003292 glue Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 30
- 238000004806 packaging method and process Methods 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a crystal grain positioning method applied to a fan-out process, wherein the fan-out process sequentially comprises a crystal placing step, a measuring step, a glue filling step, a laser drilling step, an electroplating step and a circuit exposure developing step, and the crystal grain positioning method comprises the following steps: the method comprises an X-ray inspection step, an image analysis step and a repositioning step between the glue filling step and the laser drilling step, wherein X-ray scanning is performed in the X-ray inspection step to generate X-ray scanning image information, the deviation state between the actual position and the preset position of each crystal grain is analyzed in the image analysis step to obtain crystal grain deviation state information, the laser drilling data is corrected in the repositioning step according to the crystal grain deviation state information, and the laser drilling step is performed according to the corrected laser drilling data. The invention also provides a production device applied to the fan-out process.
Description
Technical Field
The present invention relates to a method for positioning a die and a production apparatus, and more particularly, to a method for positioning a die and a production apparatus applied to a fan-out process.
Background
In the fan-out process of semiconductor, the semiconductor manufacturing process usually includes a die-placing step, a glue-filling step, a laser drilling step, and a circuit exposure developing step. The die placement means placing a plurality of cut dies at predetermined positions on a substrate for subsequent processing and packaging. The step of filling the glue is to cover the insulating glue on the upper surfaces of the substrate and the dies to form an insulating layer to encapsulate and fix the dies. After the insulating glue is fixed, laser drilling is performed by laser drilling equipment according to laser drilling data (a preset position related to the crystal grains), and a through hole penetrating through the insulating layer and the substrate is formed. These through holes perpendicular to the substrate and the insulating layer are usually located at the outer side of the die for providing wires to electrically connect the contact portions of the die and the substrate.
However, the glue before being fixed is fluid, so that the flow of the glue may cause the crystal grains to deviate from the predetermined positions in the glue filling step, or the stress from each direction during the fixing process may cause the crystal grains to deviate. This deviation condition is not only two-dimensional, but may also be three-dimensional. Once the die is embedded in the insulating layer, the offset is difficult to observe. If the laser drilling is performed according to the original laser drilling data, the relationship between the crystal grains and the original predetermined position may cause the problems that the crystal grains are accidentally damaged by the laser beam, the positions formed by the through holes cannot correspond to the crystal grains, and the like, thereby further affecting the subsequent electroplating step and the circuit exposure and development step to be performed unsuccessfully. Therefore, the production yield is greatly reduced, and the time and the material cost are wasted.
Disclosure of Invention
Therefore, to solve the above problems, an object of the present invention is to provide a die-positioning method and a manufacturing apparatus applied in a fan-out process.
The invention provides a crystal grain positioning method applied to a fan-out process for solving the technical problems in the prior art, wherein the fan-out process sequentially comprises a crystal placing step of placing a plurality of crystal grains at preset positions of a substrate, a glue pouring step of coating an insulating layer on the plurality of crystal grains and the upper surface of the substrate to form a packaging structure with the substrate, and a laser drilling step of performing laser drilling according to laser drilling data, and the crystal grain positioning method comprises the following steps: an X-ray inspection step, wherein an X-ray inspection mechanism performs X-ray scanning on the packaging structure and the plurality of crystal grains to generate X-ray scanning image information between the glue filling step and the laser drilling step, wherein the X-ray scanning image information comprises plane image information of the positions of the plurality of crystal grains relative to the substrate and depth image information of the embedded states of the plurality of crystal grains relative to the packaging structure at different depths; an image analysis step, wherein an image analysis mechanism analyzes the offset state between the actual positions of the plurality of crystal grains and the preset positions of the packaging structure according to the X-ray scanning image information to obtain crystal grain offset state information; and a repositioning step of correcting the laser drilling data by a repositioning mechanism according to the grain deviation state information, wherein the laser drilling step is executed by the laser drilling mechanism according to the corrected laser drilling data, and then the circuit exposure developing step is executed according to the corrected laser drilling data.
In an embodiment of the present invention, a die-positioning method applied to a fan-out process is provided, wherein the image analysis step includes: and analyzing the X-axis offset distance, the Y-axis offset distance and the offset rotation angle between the actual position and the preset position of each of the plurality of crystal grains according to the plane image information of the position of each of the plurality of crystal grains relative to the substrate in the X-ray scanning image information.
In an embodiment of the invention, a die-positioning method applied to a fan-out process is provided, and the image analyzing step further includes analyzing a warpage state of the package structure according to the X-ray scanning image information.
The invention provides a production device applied to a fan-out process for solving the problems in the prior art, wherein the fan-out process comprises the steps of forming a packaging structure and a plurality of crystal grains embedded in preset positions of the packaging structure, forming laser drilling data according to the preset positions, performing laser drilling according to the laser drilling data, and performing circuit exposure and development according to the corrected laser drilling data. The production equipment applied to the fan-out process comprises: the X-ray inspection mechanism is used for carrying out X-ray scanning on the packaging structure and the plurality of crystal grains embedded in the packaging structure to generate X-ray scanning image information, wherein the X-ray scanning image information comprises plane image information of the positions of the plurality of crystal grains relative to the substrate and depth image information of the embedded states of the plurality of crystal grains relative to the packaging structure at different depths; the image analysis mechanism is in signal connection with the X-ray inspection mechanism and analyzes the offset state between the actual positions of the plurality of crystal grains and the preset position of the packaging structure according to the X-ray scanning image information to obtain crystal grain offset state information; and a repositioning mechanism in signal connection with the image analysis mechanism, the repositioning mechanism correcting the laser drilling data according to the die shift status information.
In an embodiment of the present invention, a production apparatus for fan-out process further includes a laser drilling mechanism and a laser exposure machine, the laser drilling mechanism is in signal connection with the repositioning mechanism, the laser drilling mechanism performs laser drilling according to the corrected laser drilling data, and then the laser exposure machine performs circuit exposure development in a circuit exposure development step according to the corrected data.
In an embodiment of the present invention, a production apparatus for fan-out process is provided, wherein the X-ray inspection mechanism is a 3d X-ray inspection mechanism.
In one embodiment of the present invention, a production facility for a fan-out process is provided, wherein the X-ray inspection mechanism comprises a digital micromirror assembly.
By adopting the technical means, the deviation state between the actual position and the preset position of each crystal grain can be analyzed to obtain the crystal grain deviation state information, and the crystal grains are accurately repositioned according to the crystal grain deviation state information to correct the laser drilling data, so that the through hole formed by laser drilling can correspond to the crystal grain with the deviation position, the production yield is improved, and the cost is reduced. In addition, the X-ray scanning image information generated by the X-ray inspection step comprises the embedded states of the plurality of crystal grains with different depths, so that the warping state of the packaging structure can be analyzed, and the accuracy of subsequent processing and packaging processes can be improved.
Drawings
The present invention will be further described with reference to the following examples and accompanying drawings.
FIG. 1 is a schematic diagram showing a die-placement step of a fan-out process.
FIG. 2 is a schematic diagram showing a glue filling step of a fan-out process.
FIG. 3 is a schematic diagram showing a wire-plating step of a fan-out process.
FIG. 4 is a schematic diagram showing a laser drilling step of a fan-out process.
FIG. 5 is a flow chart illustrating a die-positioning method applied in a fan-out process according to an embodiment of the invention.
FIG. 6 is a schematic diagram of a manufacturing apparatus applied in a fan-out process according to an embodiment of the invention.
Fig. 7 to 11 are schematic views showing the state of the deviation between the actual position and the predetermined position of each die.
Fig. 12 is a schematic diagram showing the offset state of each die on the substrate.
Fig. 13 and 14 are schematic views showing X-ray scanning image information.
Reference numerals
100 production equipment for fan-out process
1X-ray inspection mechanism
2 image analysis mechanism
3 repositioning mechanism
4 laser drilling mechanism
5 laser exposure mechanism
B substrate
D crystal grain
G insulating layer
S101X-ray examination step
S102 image analysis step
S103 repositioning step
S104 laser drilling step
S105 electroplating step
S106 circuit exposure and development step
T1X-ray scanning image information
T2 die offset status information
Laser drilling data corrected by T3
Detailed Description
Embodiments of the present invention will be described below with reference to fig. 1 to 14. The description is not intended to limit the embodiments of the present invention, but is one example of the present invention.
Before describing the present invention, it is necessary to understand what is referred to as a fan-out process for a semiconductor package. The fan-out process sequentially comprises a crystal placing step, a measuring step, a glue filling step, a laser drilling step, an electroplating step and a circuit exposure and development step.
As shown in fig. 1, in the die-placing step, a plurality of dies D are placed at predetermined positions on the substrate B.
Next, as shown in fig. 2, in the step of encapsulating, an insulating layer G is coated on the upper surfaces of the plurality of dies D and the substrate B, and the insulating layer G and the substrate B form a package structure to bury the plurality of dies D, so that only the contact portions of the dies D are exposed.
As shown in fig. 3, before the laser drilling step, a wire electrically connecting the contact portion of the crystal grain D is plated on the surface of the insulating layer G.
As shown in fig. 4, in the laser drilling step, laser drilling is performed according to laser drilling data (related to the arrangement of the substrate B and the die D), that is, a hole is drilled at a specific position in the package structure by the concentrated energy of the laser, so that the subsequent electroplating step and the circuit exposure development step continue to plate the conductive wire, so that the die D is electrically connected to the substrate B through the contact portion and the conductive wire.
Referring to fig. 5 and fig. 6, a die-positioning method and a manufacturing apparatus according to an embodiment of the invention are applied to the fan-out process. The die positioning method comprises the following steps: an X-ray inspection step S101, an image analysis step S102, and a repositioning step S103. The manufacturing apparatus 100 applied to the fan-out process of the embodiment of the present invention includes an X-ray inspection mechanism 1, an image analysis mechanism 2, and a repositioning mechanism 3. The image analysis mechanism 2 is connected with the X-ray inspection mechanism 1 and the repositioning mechanism 3 through signals. The production apparatus 100 further includes a laser drilling mechanism 4 and a laser exposure mechanism 5 which signal-connect the repositioning mechanism 3.
In the X-ray inspection step S101, between the glue filling step and the laser drilling step, the X-ray inspection mechanism 1 performs X-ray scanning on the package structure and the plurality of dies D embedded in the package structure to generate X-ray scanning image information T1. Since the insulating layer G hardly reflects and absorbs the X-rays (i.e., the insulating layer G hardly causes transmission obstruction to the X-rays and thus is not irradiated in the X-ray scanning image information T1), and the absorption and reflection degrees of the X-rays are different between the die D and the substrate B, the plurality of dies D embedded in the insulating layer G can be easily distinguished by the X-rays (as shown in the photographs of fig. 13 and 14), so that the relative position relationship between each die D and the substrate B in space can be known to achieve precise positioning.
The X-ray scanning image information T1 includes plane image information of the positions of the respective plural dies D with respect to the substrate B, and depth image information of the respective plural dies D at different depths with respect to the buried state in the package structure. The planar image information refers to image information of a plurality of dies D projected on the upper surface of the substrate B. By setting X-ray to image at different depth planes, depth image information of multiple dies D relative to the embedded state in the package structure can be obtained.
Next, in the image analyzing step S102, the image analyzing mechanism 2 analyzes the actual positions of each of the plurality of dies D and the offset state between the predetermined positions of the package structure according to the X-ray scanning image information T1 to obtain die offset state information T2. In the present embodiment, the image analyzing step S102 includes: the X-axis offset distance, the Y-axis offset distance, and the offset rotation angle between the actual position of each of the plurality of dies D and the predetermined position are analyzed according to the planar image information of the position of each of the plurality of dies D relative to the substrate B of the X-ray scanning image information T1. As shown in FIG. 7, there is no offset between the actual position of each of the plurality of dies D and the predetermined position. As shown in FIG. 8, the actual positions of the plurality of dies D are offset from the predetermined positions by an X-axis offset distance. As shown in FIG. 9, there is a Y-axis offset distance between the actual position of each of the plurality of dies D and the predetermined position. As shown in fig. 10, the actual positions of the plurality of dies D are offset from the predetermined positions by a rotation angle. As shown in fig. 11, the actual positions of the plurality of dies D are offset from the predetermined positions by X-axis and Y-axis distances. In addition, the plurality of crystal grains D on one substrate B may have different degrees of deviation and different tendency of deviation, and there may be a non-deviated crystal grain D and a deviated crystal grain D at the same time, and the deviation degree may be complicated to form the deviation state as shown in fig. 12. Therefore, the image analysis mechanism 2 analyzes the shift state of each die D. In detail, the image analysis mechanism 2 can determine that some dies D are not shifted according to the X-ray scanning image information T1, and other dies D are shifted from the original predetermined positions respectively, and the states and degrees of the shifts are different individually, so that the image analysis mechanism 2 calculates the precise values of the shift distances and angles between the actual positions of the shifted dies D and the original predetermined positions to obtain the die shift state information T2.
Next, in the repositioning step S103, the repositioning mechanism 3 corrects the laser drilling data according to the die shift status information T2. In detail, it is known from the die shift status information T2 that the specific partial die D is not shifted, so that the repositioning mechanism 3 retains the predetermined punching positions corresponding to the non-shifted die D; the exact values of the offset distances and angles between the actual positions of the other offset dies D and the original predetermined positions are obtained according to the die offset status information T2, so as to recalculate and determine the positions of the through holes corresponding to the offset dies D. The repositioning mechanism 3 finally corrects the original laser drilling data based on the above calculations.
In the laser drilling step S104, laser drilling is performed by the laser drilling mechanism 4 according to the corrected laser drilling data T3. Therefore, the through holes formed by laser drilling can correspond to the die D, so that the subsequent electroplating step S105 and the circuit exposure and development step S106 can be smoothly performed, thereby improving the production yield and reducing the production cost.
Further, after the package structure is plated in the plating step S105, the laser exposure mechanism 5 performs a circuit exposure developing step S106 on the package structure according to the corrected laser drilling data T3.
In the present embodiment, the X-ray inspection mechanism 1 is a 3DX X-ray inspection mechanism, and includes a Digital Micromirror Device (DMD), which can provide fast scanning imaging. Therefore, in the image analyzing step S102, the method further includes scanning the depth image information of the plurality of dies D at different depths of the image information T1 according to the X-ray to analyze the warpage state of the package structure.
In summary, the die positioning method and the production equipment applied to the fan-out process of the present invention can solve the problems of the prior art, improve the production yield of the semiconductor fan-out process, and reduce the cost.
While the foregoing description and description are of the preferred embodiment of the present invention, other modifications of the invention shall be apparent to those skilled in the art from the foregoing description and claims, and it is intended that such modifications shall fall within the spirit and scope of the invention.
Claims (9)
1. A die positioning method applied to a fan-out process is characterized in that the fan-out process sequentially comprises a die placing step of placing a plurality of dies at preset positions of a substrate, a glue filling step of covering an insulating layer on the plurality of dies and the upper surface of the substrate to form a packaging structure with the substrate, and a laser drilling step of performing laser drilling according to laser drilling data, and the die positioning method comprises the following steps:
an X-ray inspection step, wherein an X-ray inspection mechanism performs X-ray scanning on the packaging structure and the plurality of crystal grains to generate X-ray scanning image information between the glue filling step and the laser drilling step, wherein the X-ray scanning image information comprises plane image information of the positions of the plurality of crystal grains relative to the substrate and depth image information of the embedded state of the plurality of crystal grains relative to the packaging structure at different depths;
an image analysis step, wherein an image analysis mechanism analyzes the offset state between the actual positions of the plurality of crystal grains and the preset position of the packaging structure according to the X-ray scanning image information to obtain crystal grain offset state information; and
a repositioning step, wherein a repositioning mechanism corrects the laser drilling data according to the die offset status information,
wherein the laser drilling step is performed by the laser drilling mechanism according to the corrected laser drilling data.
2. The method of claim 1, wherein the step of analyzing the image comprises: and analyzing the X-axis offset distance, the Y-axis offset distance and the offset rotation angle between the actual position and the preset position of each of the plurality of crystal grains according to the plane image information of the position of each of the plurality of crystal grains relative to the substrate in the X-ray scanning image information.
3. The method as claimed in claim 1, wherein the step of image analysis further comprises analyzing the warpage status of the package structure according to the image information scanned by the X-ray.
4. The method as claimed in claim 1, further comprising a plating step and a circuit exposing and developing step after the laser drilling step.
5. A production apparatus for a fan-out process, the fan-out process including forming a package structure and a plurality of dies embedded in predetermined positions of the package structure, forming laser drilling data according to the predetermined positions and performing laser drilling according to the laser drilling data, the production apparatus comprising:
an X-ray inspection mechanism for performing X-ray scanning on the package structure and the plurality of dies embedded in the package structure to generate X-ray scanning image information, wherein the X-ray scanning image information includes planar image information of positions of the plurality of dies relative to a substrate of the package structure, and depth image information of embedded states of the plurality of dies relative to the package structure at different depths;
the image analysis mechanism is in signal connection with the X-ray inspection mechanism and analyzes the offset state between the actual positions of the plurality of crystal grains and the preset position of the packaging structure according to the X-ray scanning image information to obtain crystal grain offset state information; and
and the repositioning mechanism is in signal connection with the image analysis mechanism and corrects the laser drilling data according to the grain deviation state information.
6. The manufacturing apparatus for fan-out manufacturing process as claimed in claim 5, further comprising a laser drilling mechanism in signal connection with said repositioning mechanism, said laser drilling mechanism performing laser drilling based on said corrected laser drilling data.
7. The manufacturing apparatus for fan-out manufacturing process as claimed in claim 6, further comprising a laser exposure mechanism in signal connection with said repositioning mechanism.
8. The manufacturing apparatus for fan-out manufacturing process as claimed in claim 5, wherein said X-ray inspection mechanism is a 3 DX-ray inspection mechanism.
9. The manufacturing apparatus for fan-out manufacturing of claim 8, wherein said X-ray inspection mechanism includes a digital micromirror assembly.
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| CN201611176367.4A CN108206154B (en) | 2016-12-19 | 2016-12-19 | Grain positioning method and production equipment applied to fan-out process |
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| CN201611176367.4A CN108206154B (en) | 2016-12-19 | 2016-12-19 | Grain positioning method and production equipment applied to fan-out process |
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| CN108206154B true CN108206154B (en) | 2020-06-19 |
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| CN114185248A (en) * | 2020-09-14 | 2022-03-15 | 刘大有 | Wafer offset correction method for maskless exposure machine |
| CN113533356A (en) * | 2021-09-16 | 2021-10-22 | 武汉精创电子技术有限公司 | Method, device and equipment for detecting crystal grain array defects and readable storage medium |
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| JPH09223722A (en) * | 1996-02-15 | 1997-08-26 | Toshiba Microelectron Corp | Position recognizing mark, tab tape, semiconductor device and printed circuit board |
| JP2004077284A (en) * | 2002-08-19 | 2004-03-11 | Yokogawa Electric Corp | Locating method of object having recursive structure |
| JP4523732B2 (en) * | 2001-04-04 | 2010-08-11 | 東レエンジニアリング株式会社 | Chip bonding equipment |
| CN102192918A (en) * | 2010-03-15 | 2011-09-21 | 欧姆龙株式会社 | X-ray inspection apparatus and X-ray inspection method |
| TW201444016A (en) * | 2013-01-31 | 2014-11-16 | Toray Eng Co Ltd | Mounting method and mounting device |
| CN105051878A (en) * | 2013-03-07 | 2015-11-11 | 吉林克斯公司 | Package integrity monitor with sacrificial bumps |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6993832B2 (en) * | 2001-03-02 | 2006-02-07 | Toray Engineering Co., Ltd. | Chip mounting device |
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Patent Citations (6)
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|---|---|---|---|---|
| JPH09223722A (en) * | 1996-02-15 | 1997-08-26 | Toshiba Microelectron Corp | Position recognizing mark, tab tape, semiconductor device and printed circuit board |
| JP4523732B2 (en) * | 2001-04-04 | 2010-08-11 | 東レエンジニアリング株式会社 | Chip bonding equipment |
| JP2004077284A (en) * | 2002-08-19 | 2004-03-11 | Yokogawa Electric Corp | Locating method of object having recursive structure |
| CN102192918A (en) * | 2010-03-15 | 2011-09-21 | 欧姆龙株式会社 | X-ray inspection apparatus and X-ray inspection method |
| TW201444016A (en) * | 2013-01-31 | 2014-11-16 | Toray Eng Co Ltd | Mounting method and mounting device |
| CN105051878A (en) * | 2013-03-07 | 2015-11-11 | 吉林克斯公司 | Package integrity monitor with sacrificial bumps |
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