CN108203829A - The manufacturing method of etching solution and display - Google Patents
The manufacturing method of etching solution and display Download PDFInfo
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- CN108203829A CN108203829A CN201710317772.1A CN201710317772A CN108203829A CN 108203829 A CN108203829 A CN 108203829A CN 201710317772 A CN201710317772 A CN 201710317772A CN 108203829 A CN108203829 A CN 108203829A
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- 238000005530 etching Methods 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 19
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims abstract description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 14
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims abstract description 12
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims abstract description 10
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229940102253 isopropanolamine Drugs 0.000 claims abstract description 9
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims abstract description 4
- 239000001384 succinic acid Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims description 18
- 239000011733 molybdenum Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 6
- 235000019329 dioctyl sodium sulphosuccinate Nutrition 0.000 claims description 6
- YHAIUSTWZPMYGG-UHFFFAOYSA-L disodium;2,2-dioctyl-3-sulfobutanedioate Chemical compound [Na+].[Na+].CCCCCCCCC(C([O-])=O)(C(C([O-])=O)S(O)(=O)=O)CCCCCCCC YHAIUSTWZPMYGG-UHFFFAOYSA-L 0.000 claims description 6
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 claims description 5
- 229910000906 Bronze Inorganic materials 0.000 claims 1
- 239000010974 bronze Substances 0.000 claims 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 abstract 2
- 125000003831 tetrazolyl group Chemical group 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 100
- 239000007800 oxidant agent Substances 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229960000583 acetic acid Drugs 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229960001484 edetic acid Drugs 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- -1 hydroxypropyl Chemical group 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- GEHBUYNXWNQEIU-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC=1N=NNN=1.NC=1N=NNN=1 GEHBUYNXWNQEIU-UHFFFAOYSA-N 0.000 description 1
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- YBCVMFKXIKNREZ-UHFFFAOYSA-N acoh acetic acid Chemical compound CC(O)=O.CC(O)=O YBCVMFKXIKNREZ-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- OVYQSRKFHNKIBM-UHFFFAOYSA-N butanedioic acid Chemical compound OC(=O)CCC(O)=O.OC(=O)CCC(O)=O OVYQSRKFHNKIBM-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- CBXWGGFGZDVPNV-UHFFFAOYSA-N so4-so4 Chemical compound OS(O)(=O)=O.OS(O)(=O)=O CBXWGGFGZDVPNV-UHFFFAOYSA-N 0.000 description 1
- 229940087596 sodium phenolsulfonate Drugs 0.000 description 1
- BLXAGSNYHSQSRC-UHFFFAOYSA-M sodium;2-hydroxybenzenesulfonate Chemical compound [Na+].OC1=CC=CC=C1S([O-])(=O)=O BLXAGSNYHSQSRC-UHFFFAOYSA-M 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229940032330 sulfuric acid Drugs 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
A kind of manufacturing method of etching solution and display.Etching solution includes hydrogen peroxide,Succinic acid,Malonic acid,Acetic acid,Sulfuric acid,Isopropanolamine,5 amino 1H tetrazoliums,Tetrahydroxypropyl ethylenediamine and Gly,Mentioned component is uniformly mixed in deionized water,The weight percent that wherein hydrogen peroxide accounts for etching solution is 5~10wt%,The weight percent that succinic acid accounts for etching solution is 0.5~10wt%,The weight percent that malonic acid accounts for etching solution is 0.5~10wt%,The weight percent that acetic acid accounts for etching solution is 1~10wt%,The weight percent that sulfuric acid accounts for etching solution is 0.5~5wt%,The weight percent that isopropanolamine accounts for etching solution is 1~20wt%,The weight percent that 5 amino 1H tetrazoliums account for etching solution is 0.01~0.5wt%,The weight percent that tetrahydroxypropyl ethylenediamine accounts for etching solution is 1~15wt%,The weight percent that Gly accounts for etching solution is 1~5wt%.
Description
Technical field
The invention relates to a kind of etching solution and the manufacturing method of display, and in particular to a kind of etching solution and
Using the manufacturing method of the display of the etching solution.
Background technology
According to demands such as the size of semiconductor element and functions, manufacture of semiconductor includes many fabrication steps, such as heavy
Product step, patterning step, heat treatment step ... etc..In order to reach raising process rate and manufacture cost can be reduced
Purpose, dealer is dedicated to the various improvement of each step in manufacture of semiconductor and research and development.
Invention content
The present invention is the manufacturing method in relation to a kind of etching solution and display.Etching described in embodiment using the present invention
Liquid carries out metal layer patterning process, and the metal layer after etching can form the side that angle is less than or equal to 60 degree, therefore
With relatively gentle side, be conducive to be subsequently formed other film layers when on metal layer, be not susceptible to the film layer being subsequently formed
The situation crack or fractured.
An embodiment according to the present invention, proposes a kind of etching solution.Etching solution includes hydrogen peroxide, succinic acid, malonic acid, vinegar
Acid, sulfuric acid, isopropanolamine, 5- amino -1H-TETRAZOLE, tetrahydroxypropyl ethylenediamine and Gly, mentioned component are uniformly mixed in
In ionized water, the weight percent that wherein hydrogen peroxide accounts for etching solution is 5~10wt%, and succinic acid accounts for the weight percent of etching solution
For 0.5~10wt%, the weight percent that malonic acid accounts for etching solution is 0.5~10wt%, and acetic acid accounts for the weight percent of etching solution
Than for 1~10wt%, the weight percent that sulfuric acid accounts for etching solution is 0.5~5wt%, and isopropanolamine accounts for the weight percent of etching solution
It is 0.01~0.5wt% than the weight percent that for 1~20wt%, 5- amino -1H-TETRAZOLE accounts for etching solution, four hydroxypropyl second two
The weight percent that amine accounts for etching solution is 1~15wt%, and the weight percent that Gly accounts for etching solution is 1~5wt%.
According to another embodiment of the present invention, a kind of manufacturing method of display is proposed.The manufacturing method of display includes
Following steps：One first substrate is provided；A metal layer is formed on first substrate；Metal layer is carried out using aforementioned etching solution
One patterning process；A display layer is formed on metal layer；And a second substrate is provided on display layer.
Description of the drawings
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to the tool of the present invention
Body embodiment elaborates, wherein：
Figure 1A~Fig. 1 D are painted the flow chart of the etching solution etching metal layer according to one embodiment of the invention.
Fig. 2 is painted the manufacturing method flow chart of the display according to one embodiment of the invention.
Specific embodiment
Describe the embodiment of the present invention in detail referring to the drawings.Identical label is to indicate identical or class in schema
As part.It is noted that attached drawing is the simplified content for clearly illustrating embodiment with profit, the thin portion knot that embodiment is proposed
Structure is used by way of example only, and not the range to be protected of the present invention is limited.Those skilled in the art work as can be according to reality
Embodiment aspect needs that these structures are modified or changed.
According to an embodiment of the invention, a kind of etching solution set forth below.According to an embodiment of the invention, etching solution is, for example,
Patterning process applied to the metal layer in display.
In some embodiments, etching solution includes hydrogen peroxide (H2O2), succinic acid (succinic acid), malonic acid
(malnoic acid), acetic acid (acetic acid), sulfuric acid (sulfuric acid), isopropanolamine (1-amino-2-
Propanol), 5- amino -1H-TETRAZOLE (5-amino-1H-tetrazole), tetrahydroxypropyl ethylenediamine (N, N, N ' N ' -
tetrakis(2-hydroxypropyl)ethylenediamine；EDTP) and Gly (glycine), mentioned component is equal
It is even to be mixed in deionized water.
Etching solution described in embodiment using the present invention carries out patterning process to metal layer, and the metal layer after etching can
To form the side that angle is less than or equal to 60 degree, therefore with relatively gentle side, be conducive to be subsequently formed other film layers
When on metal layer, situation that the film layer that is not susceptible to be subsequently formed cracks or fractures.
In one embodiment, the weight percent that hydrogen peroxide accounts for etching solution is about 5~10wt%.
In one embodiment, the weight percent that succinic acid accounts for etching solution is about 0.5~10wt%.In another embodiment, fourth
The weight percent that diacid accounts for etching solution is about 2~6wt%.
In one embodiment, the weight percent that malonic acid accounts for etching solution is about 0.5~10wt%.In another embodiment, third
The weight percent that diacid accounts for etching solution is about 1.5~4.5wt%.
In one embodiment, the weight percent that acetic acid accounts for etching solution is about 1~10wt%.
In one embodiment, the weight percent that sulfuric acid accounts for etching solution is about 0.5~5wt%.
In one embodiment, the weight percent that isopropanolamine accounts for etching solution is about 1~20wt%.
In one embodiment, the weight percent that 5- amino -1H-TETRAZOLE accounts for etching solution is about 0.01~0.5wt%.
In one embodiment, the weight percent that tetrahydroxypropyl ethylenediamine accounts for etching solution is about 1~15wt%.
In one embodiment, the weight percent that Gly accounts for etching solution is about 1~5wt%.
In some embodiments, etching solution more may include sodium dioctyl sulfosuccinate (sodium
dioctylsulfosuccinate).In one embodiment, the weight percent that sodium dioctyl sulfosuccinate accounts for etching solution is about
0.1~0.5wt%.
In some embodiments, etching solution more may include natrium phenolsulfonicum (sodium phenolsulfonate).One embodiment
In, the weight percent that natrium phenolsulfonicum accounts for etching solution is about 0.5~5wt%.
In some embodiments, etching solution of the invention is for example golden for etching the MULTILAYER COMPOSITE comprising at least layers of copper and molybdenum layer
Belong to layer, the wherein thickness of layers of copper can be more than the thickness of molybdenum layer.For example, in an embodiment, the thickness of layers of copper is, for example, about
3000 angstromsThe thickness of molybdenum layer is, for example, about 150 angstroms.In some embodiments, the temperature of etch process is about 30~35 DEG C,
The etching period of etch process is about 105 seconds.
In some embodiments, the pH-value (pH value) of etching solution of the invention is about 3.5~5.5.If pH-value is less than
2.5 can destroy the effect of etching inhibitor (isopropanolamine and 5- amino -1H-TETRAZOLE).
In some embodiments, since phosphoric acid can accelerate etch-rate, the etching solution of the present invention may not include phosphoric acid.One
In a little embodiments, since nitric acid can destroy photoresist, the etching solution of the present invention may not include nitric acid.
According to an embodiment of the invention, hydrogen peroxide can be used to oxidized metal as oxidant.
According to an embodiment of the invention, natrium phenolsulfonicum is optionally added as oxidizing agent stabilizing agents, can be used to stablize
The activity of oxidant and oxidant too fast decoupled is prevented, and the service life of oxidant can be extended.
According to an embodiment of the invention, succinic acid, malonic acid, acetic acid and sulfuric acid can be used to etch metal as etchant
Or metal oxide, and isopropanolamine and 5- amino -1H-TETRAZOLE can be used to control etch-rate then as etching inhibitor, into
And the form of metal after the estimated etching reached can be controlled.
In some embodiments, etching solution of the invention may not include fluoric-containing acid.For example, etching solution of the invention can not
Including hydrofluoric acid (HF).
According to an embodiment of the invention, tetrahydroxypropyl ethylenediamine and Gly can be used as metal ion chelation agent, be used for
Relatively stable metal misfit object is formed, and then oxidant can be prevented further anti-with metal ion with metal ion-chelant
It answers and the decomposition of accelerated oxidation agent.
According to an embodiment of the invention, sodium dioctyl sulfosuccinate is optionally added as surfactant, it can
To promote the uniformity of etching.
Specifically, after the metal layer to be etched is reacted with etching solution, at least part of metal is aoxidized by oxidant
And metal oxide is formed, metal oxide then can further be etched agent and etch and form metal ion, these metals
Ion can further react with chelating agent and form stable metallo-chelate.Via above-mentioned each ingredient and its other work
With, and can reach and effectively etch metal layer, control etch-rate, the activity for extending oxidant and/or promote the equal of etching
Even property.
Figure 1A~Fig. 1 D are painted the flow chart of the etching solution etching metal layer according to one embodiment of the invention.It should be noted
It is that flow figure representation of the invention needs to etch any gold in the step of making transistor unit or making other metallic circuits
Belong to flow chart during layer.
As shown in Figure 1A, a first substrate 110 is provided and forms a metal layer 120 on first substrate 110.Some
In embodiment, first substrate 110 is, for example, glass substrate；In some embodiments, first substrate 110 can also be composite film,
It may include passivation layer (passivation layer), metal oxide semiconductor layer (such as indium gallium zinc layers), amorphous phase silicon
Layer and/or silicon nitride layer or other suitable materials, but not limited to this.
As shown in Figure 1A, metal layer 120 can be initially formed molybdenum layer 121 in for example including a molybdenum layer 121 and a layers of copper 123
On one substrate 110, layers of copper 123 is then formed on molybdenum layer 121.
In some embodiments, the thickness T1 of molybdenum layer 121 is about 100~400 angstromsThe thickness T2 of layers of copper 123 is about
2500~10000 angstroms
Then, as shown in Figure 1B~Fig. 1 C, a patterning is carried out to metal layer 120 using etching solution of the present invention and is made
Journey.For example, as shown in Figure 1A~Figure 1B, a photoresist layer PR can be set on metal layer 120, then according to photoresist layer PR with
Etching solution of the present invention etches metal layer 120.In some embodiments, etch-rate is about 60~125 angstroms per seconds.At it
In his embodiment, etch-rate is about 80~100 angstroms per seconds.
Then, as shown in Figure 1 C, photoresist layer PR is removed.
In embodiment, as shown in Figure 1 C, the section of the metal layer 120 after etching completion is substantially for example with taper
(taper shaped).Since the thickness T1 of molybdenum layer 121 is less than the section of the thickness T2, actually layers of copper 123 of layers of copper 123
Such as with taper.Fig. 1 C are the sections of the metal layer 120 after etching is completed, for example, if the gold after etching completion
Category layer 120 is the linear pattern with an extending direction, and the section shown in Fig. 1 C refers to metal layer 120 perpendicular to aforementioned at this time
A section on the direction of the extending direction of linear pattern.In addition, in fig. 1 c, a side 123a of layers of copper 123 is with smooth
For surface, in other embodiments, the side 123a of layers of copper 123 may be, for example, rough surface, however, the present invention is not limited thereto.
In some embodiments, between the extension line of the side 123a of layers of copper 123 and a surface 110a of first substrate 110
One angle theta is to less than or equal to 60 degree more than 0 degree.In fig. 1 c, the side 123a extension lines of layers of copper 123 and molybdenum layer 121
Be between side extension line and the surface 110a of first substrate 110 for identical angle, but in other embodiments,
Can also have between the side 123a extension lines of layers of copper 123 and the side extension line of molybdenum layer 121 and the surface 110a of first substrate 110
There is different angles.For example, the angle between the side extension line of molybdenum layer 121 and the surface 110a of first substrate 110 can
Extremely it is less than 90 degree more than 0 degree, and this angle (not indicating) can be different from angle theta, however, the present invention is not limited thereto.Due to molybdenum layer
121 thickness T1 is less than the thickness T2 of layers of copper 123, therefore the angle theta of meaning of the embodiment of the present invention refers to the side of layers of copper 123
Angle theta between 123a extension lines and the surface 110a of first substrate 110.According to an embodiment of the invention, the side of layers of copper 123
Angle theta between the extension line of 123a and the surface 110a of first substrate 110 represents layers of copper 123 less than or equal to 60 degree with phase
To gentle side 123a, be conducive to be subsequently formed other film layers when in layers of copper 123, be not susceptible to the film layer being subsequently formed
Crack or fracture situation.
Then, as shown in figure iD, an insulating layer 130 is can be selectively formed on metal layer 120.In embodiment, due to
Angle theta between the extension line of the side 123a of layers of copper 123 and the surface 110a of first substrate 110 is less than or equal to 60 degree, after
Continue insulating layer 130 formed thereon to be not susceptible to crack or fracture situation.
Fig. 2 is painted the manufacturing method flow chart of the display according to one embodiment of the invention.In the present embodiment with it is aforementioned
The same or similar element of embodiment is to continue to use same or like element numbers, and the related description of same or similar element please
With reference to aforementioned, details are not described herein.It is noted that the subelement of Fig. 2 is that expression is omitted or simplified, to become apparent from expressing
The technical characteristic of the present invention.For example, the metal layer 120 of Fig. 2 can represent its in transistor unit or other metallic circuits
In one layer of structure diagram.
Referring to Figure 1A~1D and Fig. 2.As shown in Figure 1A~1D and Fig. 2, first substrate 110 is provided, forms metal
Layer 120 carries out metal layer 120 patterning process and selection on first substrate 110 using etching solution of the present invention
Property insulating layer 130 is formed on metal layer 120.
Then, as shown in Fig. 2, forming a display layer 140 on metal layer 120 and providing a second substrate 150 in aobvious
Show on layer 140.So far, display 10 as shown in Figure 2 is formed.
In some embodiments, display layer 140 is, for example, comprising liquid crystal, Organic Light Emitting Diode, quantum dot, light-emitting diodes
Pipe, micro- light emitting diode or other display mediums, but the present invention is not limited thereto.In some embodiments, second substrate 150
It such as may include glass, encapsulated layer or protective layer, but not limited to this.In some embodiments, display 10 is, for example, bendable display
Device, touch control display, flexible displays or other displays, but not limited to this.
It is that embodiment is described further below.It is the group for listing several embodiments and the etching solution of comparative example below
Into the property of metal layer prepared by illustrate to etch using the etching solution of the content of present invention.However following embodiment is only
For the use illustrated, and it is not necessarily to be construed as the limitation of the content of present invention implementation.The composition of the etching solution of each embodiment and
The property of metal layer after etching such as table 1, the property such as table of the metal layer after the composition of the etching solution of each comparative example and etching
2, wherein the ratio of each ingredient is represented with accounting for the weight percent of whole etching solution, " N/A " then represents that the ingredient is not included in
In the composition, and the residual components of the composition of each embodiment and comparative example are deionized water, and all the components in composition add
Total weight percent after upper deionized water is 100%.
Table 1
Table 2
It can be seen that by the result of table 1, the etching solution of Examples 1 to 5 can provide good etching result, and metal layer
Angle theta between the extension line of (layers of copper) side and the surface of first substrate can be less than 60 degree.
It can be seen that by the result of table 2, when the weight percent of hydrogen peroxide is more than 10wt%, then the metal layer after etching can be sent out
Raw undercutting, for example, undercutting refer to compare the etch-rate of molybdenum layer 121 etching of layers of copper 123 when the ingredient in etching solution
When speed is fast, the molybdenum layer 121 being etched in same time is more, leads to the edge of part layers of copper 123 can not have molybdenum because of bottom
121 support of layer and it is hanging, the film layer being subsequently formed might have the situation crack or fractured and occur；When in etching solution include hydrogen
During fluoric acid, over etching can be caused and so that substrate surface is corroded；When there is ethylenediamine tetra-acetic acid (EDTA) in etching solution, gold
The etching for belonging to layer is then incomplete, and metal material residual is had on substrate, may cause electric leakage.
Although the present invention is disclosed as above with preferred embodiment, however, it is not to limit the invention, any this field skill
Art personnel, without departing from the spirit and scope of the present invention, when can make a little modification and it is perfect, therefore the present invention protection model
It encloses to work as and is subject to what claims were defined.
Claims (10)
1. a kind of etching solution, which is characterized in that the etching solution includes：
Hydrogen peroxide, succinic acid, malonic acid, acetic acid, sulfuric acid, isopropanolamine, 5- amino -1H-TETRAZOLE, tetrahydroxypropyl ethylenediamine and
Gly is uniformly mixed in deionized water, and the weight percent that wherein hydrogen peroxide accounts for the etching solution is 5~10wt%, should
The weight percent that succinic acid accounts for the etching solution is 0.5~10wt%, and the weight percent which accounts for the etching solution is 0.5
~10wt%, the weight percent which accounts for the etching solution is 1~10wt%, which accounts for the weight percent of the etching solution
For 0.5~5wt%, the weight percent which accounts for the etching solution is 1~20wt%, which accounts for this
The weight percent of etching solution is 0.01~0.5wt%, the tetrahydroxypropyl ethylenediamine account for the weight percent of the etching solution for 1~
15wt%, the weight percent which accounts for the etching solution are 1~5wt%.
2. etching solution as described in claim 1, further includes sodium dioctyl sulfosuccinate.
3. etching solution as claimed in claim 2, which is characterized in that the sodium dioctyl sulfosuccinate accounts for the weight of the etching solution
Percentage is 0.1~0.5wt%.
4. etching solution as described in claim 1, further includes natrium phenolsulfonicum.
5. etching solution as claimed in claim 4, which is characterized in that the weight percent that the natrium phenolsulfonicum accounts for the etching solution is
0.5~5wt%.
6. etching solution as described in claim 1, which is characterized in that the pH-value of the etching solution is between 3.5 to 5.5.
7. a kind of manufacturing method of display, which is characterized in that the manufacturing method of the display includes：
One first substrate is provided；
A metal layer is formed on the first substrate；
One patterning process is carried out to the metal layer using etching solution as described in claim 1；
A display layer is formed on the metal layer；And
A second substrate is provided on the display layer.
8. the manufacturing method of display as claimed in claim 7, further includes：
An insulating layer is formed on the metal layer.
9. the manufacturing method of display as claimed in claim 7, which is characterized in that the metal layer includes a molybdenum layer and a bronze medal
Layer, forms the metal layer and is further included on the first substrate：
The molybdenum layer is formed on the first substrate；And
The layers of copper is formed on the molybdenum layer.
10. the manufacturing method of display as claimed in claim 9, which is characterized in that the extension line of a side of the layers of copper with
An angle between one surface of the first substrate is to less than or equal to 60 degree more than 0 degree.
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| US15/813,290 US10125316B2 (en) | 2016-12-20 | 2017-11-15 | Etching solution and manufacturing method of display |
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| US201662437043P | 2016-12-20 | 2016-12-20 | |
| US62/437,043 | 2016-12-20 |
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| CN115011349A (en) * | 2022-07-06 | 2022-09-06 | 南通群安电子材料有限公司 | Etching liquid medicine suitable for semiconductor process |
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