CN108179450A - 微电子衬底电处理*** - Google Patents
微电子衬底电处理*** Download PDFInfo
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Abstract
在一种用于电镀半导体晶片与类似衬底的处理***中,从电镀处理器的旋转器移除该处理器的接触环,并以先前褪镀的接触环予以替换。这使接触环能在***的环件服务模块中被褪镀,同时该处理器继续工作。晶片处理量得以提升。该接触环可以附接至夹盘,该夹盘用于将该接触环移动于这些处理器和该环件服务模块之间,该夹盘可被快速地附接至该旋转器和从该旋转器释放。
Description
本申请是申请日为2014年4月28日、申请号为201480022902.3、发明名称为“微电子衬底电处理***”的发明专利申请的分案申请。
发明背景
微电子器件一般形成在半导体晶片或其他类型的衬底或工件上。在典型的制造工艺中,在晶片上形成一层或多层薄金属层,以生产微电子器件和/或提供器件之间的导线。
金属层一般是在电镀处理器中经由电化学镀制而施加于晶片上的。典型的电镀处理器包括用于容纳电镀溶液的容器或槽体(bowl)、在槽体中与电镀溶液接触的一个或多个阳极、以及具有接触环的头部,其中该接触环上具有碰触晶片的多个电气触点。晶片的前表面被浸没于电镀溶液中,且电场使电镀溶液中的金属离子析出(plate out)至晶片上,形成金属层。
在所谓的“湿式接触”处理器中,电气触点在镀制周期期间暴露给电镀溶液。因此,在电镀溶液中的金属离子也析出至触点上。然而,触点可能在不同的速率下电镀,结果是当被镀上的(plated-on)金属随时间逐渐积聚在触点上时,某些触点会具有相对较大或较小的与晶片接触的表面积。这降低了镀制在晶片上的金属层的均匀性。与触点分离且沉积在晶片上的粘着不良的金属粒子也会污染晶片。为避免这样的结果,作为反应器的日常维护(ongoing maintenance)的一部分,触点必须被周期性地“褪镀(de-plated)”,以移除在镀制周期期间镀制在触点上的金属。
一般而言,通过将触点组件浸没于电镀溶液中、同时使反向电流通过触点来使触点褪镀。反向电流使镀制周期反向,使金属离开触点而返回溶液中。然而,必须限制反向电流以避免使电镀溶液分解。褪镀的速率也受能被给予触点周围的电镀溶液的扰动量所限制。因此,触点褪镀操作花费大量时间来完成。
所谓的干式接触电镀处理器使用密封件来保持电镀溶液不与触点的部分接触。该密封件必须被周期性地清洁,以有效作业和避免污染晶片。维护触点与密封件的需求降低了电镀***的处理量或使用效率。因此,需要有改良设计。
附图说明
在附图中,相同的元件符号表示各视图中的相同元件。
图1为处理***的平面图。
图2至图5为图1所示处理器的立体图、侧视图、前视图与平面图。
图6是图1中的机器人臂部的立体图,该机器人臂部保持(hold)夹盘组件。
图7是将夹盘组件移至处理器的机器人的侧视图。
图8是侧视图,示出了当时于处理器的头部下方对准的夹盘组件。
图9是侧视图,示出了传递出(hand off)且附接至旋转器的夹盘组件。
图10A与图10B是侧视图,示出了具有附接至旋转器的夹盘组件的头部,其中在图10A中头部是回缩的,而在图10B中头部是伸长的。
图11为头部的放大图,其中旋转部件是以深灰色或黑色示出。
图12为附接至旋转器的夹盘的放大截面图。
图13为附接至旋转器的夹盘组件的另一放大截面图。
图14A为接触环的立体图。
图14B为接触夹盘的环上的接触指部与旋转器之间的电气连接的放大细部截面图。
图14C为图14A与图14B所示的电气触点的立体图。
图15为头部的前、上、和左侧立体图。
图16为头部的侧视图,示出了其他的元件。
图17为处于倾斜方向的头部的侧视图。
图18为另一头部的前、上、和左侧立体图。
图19为图18的头部的侧视图。
图20为另一夹盘的立体图。
图21为适于与图20所示的夹盘一起使用的另一旋转器的截面图。
图22A至图22D为截面图,说明了用于从图21的旋转器松开图20的夹盘组件的步骤的顺序。
图23为另一处理***的平面图。
具体实施方式
如图1所示,处理***20包括外壳22内的模块或子***。诸如FOUP(前开式标准舱(front opening unified pod)容器之类的晶片或衬底容器24可以停驻在外壳22前方的装载/卸载站26处。所使用的子***可以随***20所执行的特定制造工艺而变化。在示出的实例中,***20包括前接口28,该前接口28可以为待移进或移出***20的晶片提供暂时储存,以及视情况提供其他的功能。若有设置的话,退火模块30、清洗(rinse)/干燥模块32、环件模块40、以及电镀腔室42在外壳22内依序布置于前接口28的后面。机器人将晶片移动于子***之间。举例而言,晶片机器人48被置为将晶片移动于退火模块30与清洗/干燥模块32之间。夹盘机器人60被置为将保持晶片的夹盘组件移动于环件模块40与电镀腔室42之间。在一种基本形式中,***20可以仅包括一个或多个电镀腔室与环件模块40。
如图2至图5所示,电镀腔室42可包括含有阳极、电解质与其他部件的容器或槽体50,例如在国际专利公开文件WO 2012/158966中所描述的那样。电镀腔室或处理器42也包括头部52。槽体50与头部52可被支撑于框架54上,电源56或其他辅助部件也可被支撑在框架上。
在传统电镀处理器中,接触环通常是永久地附接至旋转器。因此,当接触环正被褪镀、和/或接触环密封件(若有使用的话)正被清洁时,该处理器在该处理器没有正在处理晶片这个意义上说是闲置的。在***20中,通过使接触环是从该处理器的旋转器可移除的而克服了此缺点。这使得接触环可被快速移除、并以先前褪镀的接触环来替换。处理器闲置时间被大幅减少。
返回参见图1,晶片120经由晶片机器人48而被装入和载出环件模块40。在环件模块40内,接触环被褪镀。晶片由接触环夹持定位于夹盘上。夹盘、接触环和晶片、的组件或单元在此称为夹盘组件76。夹盘组件76被移动至处理器42。
图6至图9示出了由夹盘机器人60所进行的夹盘组件76的移动。如下所述,在环件模块40中,处理器42中所使用的接触环70被附接至夹盘72,连同被夹持在它们之间的晶片120一起形成夹盘组件76。夹盘机器人60然后将夹盘组件76移动至处理器42。如图6所示,夹盘机器人60可具有半圆形的终端受动器或臂部62,所述终端受动器或臂部62用于接合夹盘72。处理器42的旋转器80被提升离开槽体50。参阅图8,机器人60使夹盘组件76前进至与旋转器80对准。如图9所示,夹盘组件76然后被传递出至旋转器80,夹盘72被固定地附接至该旋转器,而机器人60被撤回。
随着夹盘组件76在旋转器80上的适当位置,处理器42就准备好处理晶片。头部52使旋转器80从图10A所示的装载/卸载位置向下移动至图10B所示的镀制位置,在该镀制位置,晶片120(被夹持在夹盘和接触环之间)与槽体50中的电解质相接触。一般而言,旋转器在镀制工艺期间旋转晶片,以提供更均匀的镀制层。图11示出了图10B的处理器,其中为说明目的,旋转元件是以黑色或深灰色表示。
转而参见图12,接触环70可以经由接触环磁铁102而附接至夹盘72,接触环磁铁102对夹盘磁铁104施加磁性吸引力。在传递出期间,夹盘72可以经由夹盘磁铁104对在旋转器80中的旋转器磁铁106的作用力而类似地附接至旋转器80。如图13所示,突出至夹盘顶部中的开口中的对准梢122可被用以使夹盘72与旋转器80对准。在接触环与夹盘附接件是利用机械元件(例如自动紧固件或夹具)制成的情况下,可视情况而省略磁铁。
如图14A至图14C所示,接触环70具有大量的单独的接触指部74,这些接触指部74与晶片120产生实际的物理与电气接触。电流从指部74流经环件导体90而至夹盘上的多个径向分隔开来的夹盘触点132。当夹盘附接至旋转器时,夹盘触点132碰触旋转器中的金属环130。金属环130经由头部52中的导电元件连接至电流源(一般为阴极)。
图15至图17示出头部设计,除了如图10A至图10B中所示的举升和降低旋转器80以外,该头部设计也可使旋转器倾斜,以使晶片120以一角度进入电解质。在图15至图17所示的设计中,旋转器框架85借助枢转致动器66而绕头部枢转接头64枢转。如图17所示,倾斜旋转器框架85对应地使晶片120倾斜。这使得旋转器80能以一角度将晶片120移动至电解质中,以改善湿润特性并减少泡沫截留(bubble trapping)。图18至图19示出另一种头部140,其中旋转器框架是固定的(亦即仅可垂直移动),且旋转器144绕头部枢转接头142倾斜。
图20示出另一夹盘150,用于与图21所示的另一旋转器160一起使用。夹盘150具有槽板152和引入(lead-in)凹槽154。旋转器160具有夹杆166,夹杆166被弹簧164向上促动。在头部中的致动器162被定位成逆着弹簧力向下移动夹杆166。
图22A至图22D示出了夹盘松开顺序。在图22A中,在致动器关闭的情况下,弹簧将夹杆保持向上。夹杆166的头部168被固定于槽板152的下面,从而夹盘借助弹簧力而被牢固地夹持在旋转器上。在图22B中,致动器被通电而将夹杆下推,并使夹盘与旋转器分离。在图22C中,夹盘机器人60横向移动夹盘,使夹杆的头部从槽板下面移出并进入凹槽154中。在图22D中,机器人60然后降低夹盘组件76且从旋转器移除夹盘组件76,并将该夹盘组件76递送给环件模块40。在环件模块40处,机器人60将该夹盘组件76放下并拾取具有未处理晶片的新的夹盘组件76。机器人60然后将该新的夹盘组件76移动至处理器,在该处理器处,以与图22A至图22D所示的步骤相反的顺序而装载该新的夹盘组件76。旋转器、夹盘和接触环可为统一的(具有相同尺寸与形状),从而夹盘组件可以被可互换地使用。
在环件模块内,接触环被褪镀,而接触密封件(若有的话)可以被清洁。褪镀和/或密封件清洁可以在接触环附接至夹盘的情况下进行。在这种类型的***中,夹盘与接触环可以实质上永久地彼此附接。可替代地,可使用适合处理和附接至头部(以与夹盘相同的方式)的改良接触环,实质上是作为一组合接触环/夹盘。在此设计中,夹盘的功能性元件是包含在接触环中的,而未设有独立的夹盘。举例而言,接触环可以配备有整合背板,接触环的接触指部能朝向背板移动和移动离开背板,以装载和卸载晶片。
接触环也可于褪镀和/或清洁期间从夹盘拆下和分离。在此类型的***中,每个经褪镀的接触环被附接至夹盘,在接触环与夹盘之间夹有未处理晶片,所得到的夹盘组件76然后被定位以由机器人60进行拾取。同样在环件模块40内,从处理器42返回的夹盘组件76被打开,即,经处理的晶片被松开和移除,以由晶片机器人48进行拾取。
图1所示的***20可用于铜镶嵌(Damascene)电镀。图23为另一***180的顶视图,该***180可用于晶片级封装(Wafer Level Packaging,WLF)。***180可省略退火腔室30。清洗/干燥模块32可与环件模块40相结合成支持模块182。支持模块182也可包括一个或多个真空预湿润腔室。相较于图1所示的***20,在图23所示***180中,晶片夹持/松开步骤是在支持模块182中朝向***前端进行,而非如图1中在较为中央的位置处进行。支持模块可配备有三个清洗/干燥模块、两个真空预湿润腔室、以及两个环件模块。
仍参照图23,***180可以具有高达20个金属电镀腔室42,这些金属电镀腔室42设定为群组以镀制三种不同金属,例如铜、镍、以及锡-银。这些金属电镀腔室可以以叠加的构造而处于两个高度水平。上述用于***20中的机器人与夹盘操作也同样可于***180中使用。
因此,本文已示出和描述新颖的***和方法。在未脱离本发明的精神与范畴下当然可进行诸般变化与替换。因此,本发明应不受除下述要求保护的专利范围与其等同物以外的限制。晶片是指硅或其他半导体材料的晶片、或是用以制造微电子、微机电、或微光学器件的其他类型的衬底或工件。所描述的***可以适合用于直径为150、200、300或450mm的晶片。
Claims (8)
1.一种使用于电镀***中的夹盘组件(76),所述夹盘组件包括:
夹盘板(72,150),所述夹盘板具有顶表面和底表面;
接触环(70),所述接触环在所述夹盘板的所述底表面上,其中所述接触环具有多个接触指部(74),所述多个接触指部适于接触在所述接触环与所述夹盘板之间的工件;和
至少一个夹盘触点(132),所述至少一个夹盘触点在所述夹盘板上且与所述接触环的所述多个接触指部产生电气接触。
2.如权利要求1所述的夹盘组件,进一步包括槽板(152),所述槽板位于所述夹盘板的所述顶表面上的中央,其中所述槽板具有从所述槽板的边缘延伸至所述槽板的中心的槽。
3.如权利要求1所述的夹盘组件,进一步包括在所述接触环上的环形密封件。
4.如权利要求1所述的夹盘组件,进一步包括在所述夹盘板上或中的一个或多个夹盘磁铁(104)和在所述接触环(70)上或中的一个或多个接触环磁铁(102)。
5.如权利要求1所述的夹盘组件,进一步包括从所述夹盘板的所述顶表面向上延伸的一个或多个对准销(122),所述一个或多个对准销用以使所述夹盘与电镀***的旋转器对准。
6.如权利要求1所述的夹盘组件,进一步包括在所述夹盘板中的引入凹槽(154)。
7.如权利要求1所述的夹盘组件,进一步包括多个电气夹盘触点(132),所述多个电气夹盘触点从所述夹盘板(72,150)的顶表面延伸至所述接触环(70)。
8.如权利要求1所述的夹盘组件,进一步包括一个或多个环件导体(90),所述一个或多个环件导体将所述至少一个夹盘触点电气连接至所述接触环(70)。
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