CN108177080A - A kind of bevelling method of chip - Google Patents
A kind of bevelling method of chip Download PDFInfo
- Publication number
- CN108177080A CN108177080A CN201711457843.4A CN201711457843A CN108177080A CN 108177080 A CN108177080 A CN 108177080A CN 201711457843 A CN201711457843 A CN 201711457843A CN 108177080 A CN108177080 A CN 108177080A
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- CN
- China
- Prior art keywords
- chip
- bevelling
- buffer solution
- abrasive sand
- dispersant
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B31/00—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor
- B24B31/02—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor involving rotary barrels
- B24B31/03—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor involving rotary barrels the workpieces being continuously-travelling
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The embodiment of the present invention provides a kind of bevelling method of chip, is related to materials processing technology field.Wherein, this method includes：Chip, abrasive sand, mill ball and buffer solution are mixed, it is placed in roller, rotates 10min under conditions of rotating speed is 560pm, obtain the chip after bevelling, wherein, the ratio of the volume of the quantity of chip and the quality of abrasive sand, the quality of mill ball and buffer solution is 500：5g：10g：10mL, grinding bead diameter 5mm, buffer solution are dispersant and the aqueous solution of antirust agent, and the wherein mass ratio of dispersant, antirust agent and water is 0.5：0.1：1, dispersant is at least one of triethyl group hexyl phosphoric acid and polyacrylamide, and antirust agent is at least one of alkylolamides and sodium citrate.By general, abrasive sand, mill ball and buffer solution mix, obtain the chip of bevelling, do not need to replace abrasive sand, the simple passable raising bevelling efficiency of operating process.
Description
Technical field
The invention belongs to materials processing technology field more particularly to a kind of bevelling methods of chip.
Background technology
Quartz wafer is to use a kind of relatively broad semi-conducting material at present.In the technique for preparing quartz wafer, need
Bevelling is carried out, usually using three kinds of methods：1st, it is put into roller using abrasive sand and quartz wafer and carries out bevelling；2nd, in stone
English wafer surface overlay film, is added to bevelling in roller together with water, abrasive sand, steel ball；3rd, the method bevelling of etching is utilized.
However, the above method 1 needs repeatedly to replace abrasive sand during bevelling, the time is long, and the consumptive material of abrasive sand is more.Side
Method 2 can save the usage amount of abrasive sand and bevelling time, still, be needed before bevelling in quartz wafer surface coating, complete
Demoulding again after into bevelling, procedure complexity.Method 3 needs accurate equipment to implement to etch, and equipment cost is high, at present efficiency
It is low.
Invention content
The present invention provides a kind of bevelling method of chip, it is intended to solve that existing bevelling method consumptive material is more, tedious process, imitate
The problem of rate is low.
The present invention provides a kind of bevelling method of chip, including：Chip, abrasive sand, mill ball and buffer solution are mixed, put
In roller, 10-3000min is rotated under conditions of rotating speed is 50-560rpm, obtains the chip after bevelling；
Wherein, the ratio of the volume of the quantity of chip and the quality of abrasive sand, the quality of mill ball and buffer solution is
500-50000 parts：5-500g：10~500g：10~500mL；
Aqueous solution of the buffer solution for dispersant and antirust agent, the wherein mass ratio of dispersant, antirust agent and water for 0.2~
0.7：0.05~0.2：1~1000, dispersant is at least one of triethyl group hexyl phosphoric acid and polyacrylamide, and antirust agent is
At least one of alkylolamides and sodium citrate.
The embodiment of the present invention provides a kind of bevelling method of quartz wafer, by general, abrasive sand, mill ball and buffer solution mix
Merge and rolled under conditions of rotating speed is 50-560rpm with chip, obtain the chip of bevelling.This method does not need to replace grinding
Sand, operating process is simple, not only reduces the consumption of material, bevelling efficiency can also be greatly improved.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention.
Fig. 1 is a kind of process schematic representation of the bevelling of chip provided in an embodiment of the present invention；
Fig. 2 is the distribution of impedance figure for the bevelling quartz wafer that the embodiment of the present invention 5 provides.
Specific embodiment
In order to make the invention's purpose, features and advantages of the invention more obvious and easy to understand, below in conjunction with the present invention
The technical solution in the embodiment of the present invention is clearly and completely described in attached drawing in embodiment, it is clear that described reality
It is only part of the embodiment of the present invention to apply example, and not all embodiments.Based on the embodiments of the present invention, people in the art
Member's all other embodiments obtained without making creative work, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of bevelling method of chip, including：
Chip, abrasive sand, mill ball and buffer solution are mixed, are placed in roller, under conditions of rotating speed is 50-560rpm
10-30000min is rotated, obtains the chip after bevelling；
Wherein, the ratio of the volume of the quantity of chip and the quality of abrasive sand, the quality of mill ball and buffer solution is
500-50000 parts：5-500g：10~500g：10~500mL；
Aqueous solution of the buffer solution for dispersant and antirust agent, the wherein mass ratio of dispersant, antirust agent and water for 0.2~
0.7：0.05~0.2：1~1000, dispersant is at least one of triethyl group hexyl phosphoric acid and polyacrylamide, and antirust agent is
At least one of alkylolamides and sodium citrate.
The embodiment of the present invention provides a kind of bevelling method of chip, by the way that abrasive sand, mill ball and buffer solution are mixed simultaneously
It is rolled under conditions of rotating speed is 50-560rpm with chip, obtains the chip of bevelling.As shown in FIG. 1, FIG. 1 is the present invention to implement
The schematic diagram for the chip bevelling technique that example provides, this method do not need to replace abrasive sand, and operating process is simple, not only reduces consumptive material
Consumption, bevelling efficiency can also be greatly improved.
Specifically, chip is other chips such as quartz wafer, silicon wafer, silicon carbide wafer or gallium nitride wafer, size
For：It is long<3mm, width<2mm and thickness<0.2mm.Preferably, chip is quartz wafer.
Specifically, abrasive sand is one kind in aluminium oxide, silicon carbide, metal and grinding material.Its grain size is micro- for 1~100
Rice.Preferably, the grain size of abrasive sand is 30~100 microns.
Specifically, mill ball is at least one of for copper bead, steel ball and porcelain bead, a diameter of 0.3~5mm.Preferably, it grinds
Abrading-ball is multiple steel balls not of uniform size comprising a diameter of 0.3~2.5mm.
Preferably, the rotating speed when carrying out chip bevelling is 200rpm, and rotation time is 100~1500min, more preferably
Ground, rotation time are 500~1000min.
Preferably, the ratio of the volume of the quantity of chip and the quality of abrasive sand, the quality of mill ball and buffer solution is
2000：20~80g：100~300g：100~300mL.
Preferably, in buffer solution, the mass ratio of triethyl group hexyl phosphoric acid, alkylolamides and water is 0.5：0.1：500, gather
The mass ratio of acrylamide, sodium citrate and water is 0.4：0.15：800.
Embodiment 1
By quartz wafer, 5g abrasive sands, 10g mill balls and the 10mL that 2000 chip sizes are 0.6mm*0.4mm*0.03mm
Buffer solution mixes, and rotates 30min under conditions of rotating speed is 140rpm, obtains the chip after bevelling, wherein, in buffer solution, three
The mass ratio of ethylhexyl phosphoric acid, alkylolamides and water is 0.5：0.1：500.
Embodiment 2
By 30000 chip sizes be the quartz wafer of 2mm*1.5mm*0.2mm, 100g abrasive sands, 500g mill balls and
500mL buffer solutions mix, and rotate 2000min under conditions of rotating speed is 260rpm, obtain the chip after bevelling, wherein, buffering
In liquid, the mass ratio of polyacrylamide, sodium citrate and water is 0.2：0.05：1.
Embodiment 3
Quartz wafer, 50g abrasive sands, 80g mill balls and 100mL that 5000 chip sizes are 1mm*1mm*0.05mm are delayed
Fliud flushing mixes, and rotates 500min under conditions of rotating speed is 200rpm, obtains the chip after bevelling, wherein, in buffer solution, poly- third
The mass ratio of acrylamide, alkylolamides and water is 0.4：0.15：800.
Embodiment 4
By 10000 chip sizes be the quartz wafer of 1.2mm*1.5mm*0.08mm, 80g abrasive sands, 100g mill balls and
150mL buffer solutions mix, and rotate 300min under conditions of rotating speed is 250rpm, obtain the chip after bevelling, wherein, buffer solution
In, the mass ratio of triethyl group hexyl phosphoric acid, sodium citrate and water is 0.4：0.15：800.
Embodiment 5
Quartz wafer, 50g abrasive sands, 80g mill balls and 100mL that 8000 chip sizes are 1mm*1mm*0.05mm are delayed
Fliud flushing mixes, and rotates 200min under conditions of rotating speed is 180rpm, obtains the chip after bevelling, wherein, in buffer solution, three second
The mass ratio of base hexyl phosphoric acid, sodium citrate and water is 0.4：0.15：800.
Quartz wafer edge symmetry after 5 bevelling of Statistics Implementation example is good, and the finished product electric parameter being assembled into is good, wherein hindering
Anti- distribution map as shown in Fig. 2, from Figure 2 it can be seen that embodiment 1 be prepared quartz wafer assembling finished product after, the impedance one of product
Cause property is good.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of bevelling method of chip, which is characterized in that the method includes：
Chip, abrasive sand, mill ball and buffer solution are mixed, are placed in roller, is rotated under conditions of rotating speed is 50-560rpm
10-3000min obtains the chip after bevelling；
Wherein, the ratio of the volume of the quantity of chip and the quality of abrasive sand, the quality of mill ball and buffer solution is 500-
50000：5-500g：10~500g：10~500mL；
Buffer solution is dispersant and the aqueous solution of antirust agent, and the wherein mass ratio of dispersant, antirust agent and water is 0.2~0.7：
0.05~0.2：1~1000, dispersant is at least one of triethyl group hexyl phosphoric acid and polyacrylamide, and antirust agent is alkyl
At least one of alkylolamides and sodium citrate.
2. according to the method described in claim 1, it is characterized in that, the chip is quartz wafer.
3. according to the method described in claim 1, it is characterized in that, the abrasive sand is aluminium oxide, silicon carbide, metal and grinding
One kind in material.
4. according to the method described in claim 3, it is characterized in that, the grain size of the abrasive sand is 1~100 micron.
5. according to the method described in claim 1, it is characterized in that, a diameter of 0.3-5mm of the mill ball.
6. according to the method described in claim 5, it is characterized in that, the mill ball in copper bead, steel ball and porcelain bead at least
It is a kind of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711457843.4A CN108177080A (en) | 2017-12-28 | 2017-12-28 | A kind of bevelling method of chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711457843.4A CN108177080A (en) | 2017-12-28 | 2017-12-28 | A kind of bevelling method of chip |
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| CN108177080A true CN108177080A (en) | 2018-06-19 |
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| CN201711457843.4A Pending CN108177080A (en) | 2017-12-28 | 2017-12-28 | A kind of bevelling method of chip |
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| CN (1) | CN108177080A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113306028A (en) * | 2021-05-10 | 2021-08-27 | 中山市海晶电子有限公司 | Preparation method of quartz wafer with 3225-8MHZ resonator mounted on surface of ultra-small resistor |
| CN113478331A (en) * | 2021-05-10 | 2021-10-08 | 中山市海晶电子有限公司 | Quartz wafer trimming barrel diameter capable of reducing resonator resistance and trimming method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69719459D1 (en) * | 1996-10-02 | 2003-04-10 | Ngk Ceramics Europ Sa | Process for splinterless processing of the edge area of a ceramic preform |
| US20070029063A1 (en) * | 2005-08-03 | 2007-02-08 | Didion Michael S | Liner for a casting shake out and reclaimer |
| CN102311718A (en) * | 2011-04-26 | 2012-01-11 | 东莞市安美润滑科技有限公司 | Aqueous grinding fluid applied to super precision grinding of hard and brittle materials and application method thereof |
| CN102335855A (en) * | 2011-06-02 | 2012-02-01 | 湖北东光电子股份有限公司 | Beveling process for 49U/S quartz wafer |
| CN104532354A (en) * | 2015-02-03 | 2015-04-22 | 贵州省冶金化工研究所 | Preparation method of light-color conducting whiskers |
| CN105751054A (en) * | 2016-03-09 | 2016-07-13 | 应达利电子股份有限公司 | Quartz wafer processing technology |
-
2017
- 2017-12-28 CN CN201711457843.4A patent/CN108177080A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69719459D1 (en) * | 1996-10-02 | 2003-04-10 | Ngk Ceramics Europ Sa | Process for splinterless processing of the edge area of a ceramic preform |
| US20070029063A1 (en) * | 2005-08-03 | 2007-02-08 | Didion Michael S | Liner for a casting shake out and reclaimer |
| CN102311718A (en) * | 2011-04-26 | 2012-01-11 | 东莞市安美润滑科技有限公司 | Aqueous grinding fluid applied to super precision grinding of hard and brittle materials and application method thereof |
| CN102335855A (en) * | 2011-06-02 | 2012-02-01 | 湖北东光电子股份有限公司 | Beveling process for 49U/S quartz wafer |
| CN104532354A (en) * | 2015-02-03 | 2015-04-22 | 贵州省冶金化工研究所 | Preparation method of light-color conducting whiskers |
| CN105751054A (en) * | 2016-03-09 | 2016-07-13 | 应达利电子股份有限公司 | Quartz wafer processing technology |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113306028A (en) * | 2021-05-10 | 2021-08-27 | 中山市海晶电子有限公司 | Preparation method of quartz wafer with 3225-8MHZ resonator mounted on surface of ultra-small resistor |
| CN113478331A (en) * | 2021-05-10 | 2021-10-08 | 中山市海晶电子有限公司 | Quartz wafer trimming barrel diameter capable of reducing resonator resistance and trimming method thereof |
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Application publication date: 20180619 |