CN108173419A - A kind of highly efficient driver circuit suitable for wide-bandgap power devices - Google Patents

A kind of highly efficient driver circuit suitable for wide-bandgap power devices Download PDF

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Publication number
CN108173419A
CN108173419A CN201810141932.6A CN201810141932A CN108173419A CN 108173419 A CN108173419 A CN 108173419A CN 201810141932 A CN201810141932 A CN 201810141932A CN 108173419 A CN108173419 A CN 108173419A
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circuit
logic circuit
input terminal
resistance
connect
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CN201810141932.6A
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CN108173419B (en
Inventor
王振民
范文艳
谢芳祥
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South China University of Technology SCUT
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South China University of Technology SCUT
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/44Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

The present invention provides a kind of highly efficient driver circuits suitable for wide-bandgap power devices, it is characterised in that:Including control chip, power supply module one, power supply module two, insulation blocking module and power device;PWM output terminals are connect with the input terminal of logic circuit one, and power supply module one is connect with the input terminal of logic circuit one;Power supply module two is connect with the input terminal of logic circuit three, and the grid of power device is connect with the input terminal of logic circuit three;The output terminal of logic circuit three is connected by the grid of gate protection circuit and power device;The drain electrode of power device protects circuit to be connect with the input terminal of logic circuit four by drain electrode, and the output terminal of logic circuit two is connect respectively with ready signal input terminal and fault-signal input terminal.The driving circuit has defencive function, can weaken during driving that transient state occur excessively high and lead to the problem of electromagnetic interference, prevents due to voltage spikes and cause false triggering have good driving effect.

Description

A kind of highly efficient driver circuit suitable for wide-bandgap power devices
Technical field
The present invention relates to wide-bandgap power devices actuation techniques fields, are suitable for broad stopband more specifically to one kind The highly efficient driver circuit of power device.
Background technology
Current various power supplys propose higher requirement to power density and energy conversion efficiency, substantially pass through The high frequency of power device is realized with power consumption is reduced.For traditional Si base power devices, broad stopband work(of new generation Rate device has the superior switch performance such as faster switching capability and lower switching loss.Wide-bandgap power devices are main Including two major class of SiC types and GaN types.At present, Scientific Research Workers are try to wide-bandgap power devices being widely used in On various power supplys, improving the overall performance of power supply, reducing switching loss, reduction volume and improving efficiency.
But when wide-bandgap power devices work under high frequency condition, excessively high transient voltage dv/dt and transient current Di/dt can generate electromagnetic interference by interacting with the input capacitance of circuit stray inductance and wide-bandgap power devices (EMI), spike is generated so as to cause driving circuit voltage, causes false triggering.In order to solve this problem, there is an urgent need to develop one The driving circuit of with wider accommodation, the efficient wide-bandgap power devices of kind.
Invention content
It is an object of the invention to overcome shortcoming and deficiency of the prior art, provide a kind of suitable for broad stopband power device Part, have defencive function, power device is effectively prevent to be damaged, can weaken wide-bandgap power devices driving during there is wink State voltage and transient current it is excessively high and lead to the problem of electromagnetic interference, prevent due to voltage spikes and cause false triggering, have it is good The highly efficient driver circuit of effect is driven well.
In order to achieve the above object, the technical scheme is that:One kind is suitable for broad stopband power The highly efficient driver circuit of device, it is characterised in that:Including control chip, power supply module one, power supply module two, insulation blocking module And power device;The control chip includes PWM output terminals, ready signal input terminal, fault-signal input terminal and reset signal Output terminal;The insulation blocking module includes isolation circuit one, isolation circuit two, logic circuit one, logic circuit two, logic electricity Road three and logic circuit four;
The PWM output terminals are connect with the input terminal of logic circuit one, power supply module one by under-voltage locking module M1 with The input terminal connection of logic circuit one, the output terminal of logic circuit one are connect with the input terminal of isolation circuit one, to realize power supply One voltage monitoring of module, and the pwm signal that PWM output terminals export is transmitted under one voltage normal condition of power supply module;Isolation electricity The output terminal on road one is connect with the input terminal of logic circuit three, power supply module two-way overvoltage/undervoltage locking module M5 and logic circuit three Input terminal connection, and the grid of power device is connect by grid voltage comparison circuit with the input terminal of logic circuit three;It patrols The output terminal for collecting circuit three is connected by the grid of gate protection circuit and power device, to realize two voltage of power supply module and work( The grid voltage monitoring of rate device, and by institute under and the grid voltage normal condition of power device normal in one voltage of power supply module State the grid that pwm signal is sent to power device by gate protection circuit;
The drain electrode of the power device protects circuit and drain-source voltage comparison circuit with patrolling by sequentially connected drain electrode The input terminal connection of circuit four is collected, the output terminal of logic circuit four is connect with the input terminal of isolation circuit two, to realize power device The drain-source voltage monitoring of part, and send out fault-signal when the drain-source voltage of power device is excessive;Isolation circuit two it is defeated Outlet is connect with the input terminal of logic circuit two;The output terminal of logic circuit two respectively with ready signal input terminal and fault-signal Input terminal connects, and the fault-signal is sent to control chip to realize;Reset signal output terminal is defeated with logic circuit two Enter end connection;The ready signal input terminal is connect by resistance R3 with power supply module one;The fault-signal input terminal passes through Resistance R4 is connect with power supply module one.
Highly efficient driver circuit of the present invention is suitable for wide-bandgap power devices, has multi-protective function, effectively prevent power Device is damaged;Can weaken wide-bandgap power devices driving during occur transient voltage and transient current it is excessively high, generate electricity The problem of magnetic disturbance, prevents due to voltage spikes and causes false triggering have good driving effect.
Preferably, the drain electrode protection circuit includes:Capacitance C4, voltage-stabiliser tube ZD1, resistance R10 and diode D2;The leakage Source voltage comparison circuit is connected by the drain electrode of sequentially connected resistance R10 and diode D2 and power device;Hourglass source electrode electricity Pressure comparison circuit connect the cathode of power supply module two with the tie point of resistance R10 by capacitance C4 and voltage-stabiliser tube ZD1 respectively.
Preferably, the gate protection circuit includes:Diode D3, resistance R11, resistance R12, resistance R13 and capacitance C5; It is in parallel with resistance R12 after the diode D3 and resistance R11 series connection;The tie point of resistance R11 and resistance R12 and power device Grid connects;Diode D3 is connect with the tie point of resistance R12 with the output terminal of logic circuit three;Resistance R13 and capacitance C5 are simultaneously It is parallel between the grid of power device and source electrode after connection.By adjusting the parameter of each device of gate protection circuit, it is adjusted The actuating speed of power device.
Preferably, the isolation circuit one, isolation circuit two, logic circuit one, logic circuit two, logic circuit three, patrol Collect circuit four, grid voltage comparison circuit, drain-source voltage comparison circuit, under-voltage locking module M1 and under-voltage locking module M5 collection On Cheng Yi isolation drive chip.Highly efficient driver circuit of the present invention is mutually tied using integrated isolation drive chip with discrete component It closes, circuit structure can be simplified.
Preferably, the isolation drive chip refers to:Model ISO5852S, ISO5851, ISO5452, ISO5451, The chip of any one of 1ED020I12-F2,2ED020I12-F2 and 1EDU20I12SV.These chip reliabilities are strong, and fit For wide-bandgap power devices.
Compared with prior art, the invention has the advantages that and advantageous effect:
1st, highly efficient driver circuit of the present invention is suitable for wide-bandgap power devices, has multi-protective function, effectively prevent work( Rate device is damaged;Can weaken wide-bandgap power devices driving during occur transient voltage and transient current it is excessively high, generate The problem of electromagnetic interference, prevents due to voltage spikes and causes false triggering have good driving effect;
2nd, highly efficient driver circuit of the present invention is by adjusting the parameter of each device of gate protection circuit, regulating power device Actuating speed, debugging it is simple, convenient;
3rd, full discrete component pattern had not only may be used in highly efficient driver circuit of the present invention, but also integrated isolation drive may be used Chip is combined with discrete component, can simplify circuit structure.
Description of the drawings
Fig. 1 is the structure diagram of highly efficient driver circuit of the present invention;
Fig. 2 is the circuit diagram that one highly efficient driver circuit of embodiment uses full discrete cell mode;
Fig. 3 is the circuit diagram that two highly efficient driver circuit of embodiment uses intergration model.
Specific embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment one
As depicted in figs. 1 and 2, a kind of highly efficient driver circuit suitable for wide-bandgap power devices of the present embodiment, including control Coremaking piece, power supply module one, power supply module two, insulation blocking module and power device;Control chip including PWM output terminals, just Thread signal input part, fault-signal input terminal and reset signal output terminal;Insulation blocking module includes isolation circuit one, isolation electricity Road two, logic circuit one, logic circuit two, logic circuit three and logic circuit four.
PWM output terminals are connect with the input terminal of logic circuit one, and power supply module one passes through under-voltage locking module M1 and logic The input terminal connection of circuit one, the output terminal of logic circuit one is connect with the input terminal of isolation circuit one, to realize power supply module One voltage monitoring, and the pwm signal that PWM output terminals export is transmitted under one voltage normal condition of power supply module;Isolation circuit one Output terminal connect with the input terminal of logic circuit three, power supply module two-way overvoltage/undervoltage locking module M5 is defeated with logic circuit three Enter end connection, and the grid of power device is connect by grid voltage comparison circuit with the input terminal of logic circuit three;Logic electricity The output terminal on road three is connected by the grid of gate protection circuit and power device, to realize two voltage of power supply module and power device The grid voltage monitoring of part, and believe PWM under and the grid voltage normal condition of power device normal in one voltage of power supply module The grid of power device number is sent to by gate protection circuit.
Principle is:As shown in Fig. 2, when the supply voltage of power supply module one is less than the voltage V of under-voltage locking module M1UVLOL1 Or the supply voltage of power supply module two is less than the V of under-voltage locking module M5UVLOL2When, cut-off signals will be sent to control core Piece, the pwm signal of PWM output terminals input are ignored automatically.
The PWM output terminals of chip is controlled to provide pwm signal, high level is effective;Pwm signal forward direction is input to pin PWM+, Pin PWM- is connected to the cathode GND1 of power supply module one;Pin PWM+ is connected to the negative of power supply module one by pull down resistor R2 Pole GND1, pin PWM- are connected to the anode VCC1 of power supply module one by pull-up resistor R5.PWM- points of pin PWM+ and pin The input terminal of logic circuit one is not connected to via PWM time delay modules M2 and M3;Therefore pwm signal is via PWM time delay modules M2 And M3, the minimum value of pulse width can be limited, is interfered so as to eliminate high-frequency impulse.
The output terminal of logic circuit three is connect by the push-pull configuration being made of MOSFT pipes Q4 and Q5 with pin OUT;PWM Signal controls the push-pull configuration being made of MOSFT pipes Q4 and Q5 by logic circuit one, isolation circuit one and logic circuit three, Output pwm signal can reduce power consumption, improve reliability to pin OUT.It can be the micro- place of MCU, ARM or DSP to control chip Manage device or dedicated integrated pwm chip.
Grid voltage comparison circuit includes comparator F1 and MOSFET pipe Q3;Pin CLAMP monitors power device in real time By its voltage value by comparing device F1, rear input logic circuit three is compared with 2V for grid voltage;Pin CLAMP is compared with Device F1 turns on MOSFET pipe Q3, conducive to the release of grid source electrode internal parasitic capacitances charge, so as to subtract when voltage is more than 2V Small or elimination the Miller effect.
The drain electrode of power device protects circuit and drain-source voltage comparison circuit and logic electricity by sequentially connected drain electrode The input terminal connection on road four, the output terminal of logic circuit four is connect with the input terminal of isolation circuit two, to realize power device Drain-source voltage monitors, and sends out fault-signal when the drain-source voltage of power device is excessive;The output terminal of isolation circuit two It is connect with the input terminal of logic circuit two;The output terminal of logic circuit two inputs respectively with ready signal input terminal and fault-signal Fault-signal is sent to control chip by end connection to realize;Reset signal output terminal is connect with the input terminal of logic circuit two; Ready signal input terminal is connect by resistance R3 with power supply module one;Fault-signal input terminal passes through resistance R4 and power supply module one Connection.
As shown in Fig. 2, gate protection circuit includes:Diode D3, resistance R11, resistance R12, resistance R13 and capacitance C5; It is in parallel with resistance R12 after diode D3 and resistance R11 series connection;Resistance R11 and the tie point of resistance R12 and the grid of power device Connection;Diode D3 is connect with the tie point of resistance R12 with the output terminal of logic circuit three;After resistance R13 and capacitance C5 parallel connections It is parallel between the grid of power device and source electrode.By adjusting the parameter of each device of gate protection circuit, regulating power The actuating speed of device.
Resistance R12 drives resistance for forward conduction in gate protection circuit, and resistance R11 drives resistance reversely to turn off, and two Pole pipe D3 can accelerate power device turn-off speed.Wherein resistance R13 and capacitance C5 can be directly affected in the conducting of power device Rise actuating speed.Therefore, highly efficient driver circuit debugging of the present invention is simple, convenient.
Drain electrode protection circuit includes:Capacitance C4, voltage-stabiliser tube ZD1, resistance R10 and diode D2;Drain-source voltage is more electric Road is connected by the drain electrode of sequentially connected resistance R10 and diode D2 and power device;Drain-source voltage comparison circuit and electricity The tie point of resistance R10 connects the cathode of power supply module two by capacitance C4 with voltage-stabiliser tube ZD1 respectively.
Drain-source voltage comparison circuit includes comparator F2, high-precision current source I1, resistance R9, diode D1 and MOSFET Pipe Q7;Pin DESAT is used for detecting the drain-source voltage of power device, so as to detect whether power device is in over-current state, By its voltage value by comparing device F2, rear input logic circuit four is compared with 9V, it is made to close PWM when voltage is more than 9V Driving output burns out so as to prevent power device from straight-through rear overcurrent occurs.High-precision current source I1, capacitance C4 and voltage-stabiliser tube ZD1 forms blanking time circuit, prevents accidentally to protect.Resistance R10 and diode D2, which is that drain current is counter in order to prevent, to be filled.
Pin Ready represents ready state, is connected between ready signal input terminal and logic circuit two by MOSFET pipes Q1 It connects, MOSFET pipes Q1 is also connected to by resistance R6 on the anode VCC1 of power supply module one.Resistance R4 is connected to confession for pull-up resistor The anode VCC1 of electric module one, when power supply module one is abnormal and circuit transmission is wrong, signal by logic circuit four, every From circuit two and logic circuit two, open MOSFET pipes Q1, wherein resistance R6 is pull-up resistor, pin Ready open-drain outputs Low level prompts control chip status not ready to control chip.
Pin Fault represents fault-signal, is connected between fault-signal input terminal and logic circuit two by MOSFET pipes Q2 It connects, MOSFET pipes Q2 is also connected to by resistance R7 on the anode VCC1 of power supply module one.Resistance R3 is connected to confession for pull-up resistor The anode VCC1 of electric module one, after same bridge arm power device is led directly to, fault-signal passes through logic circuit four, isolation circuit two With logic circuit two, MOSFET pipes Q2 is connected, wherein resistance R7 is pull-up resistor, and pin Fault exports low level to control Chip, so as to turn off pwm signal output.
Pin Reset represents reset signal, is connected between reset signal output terminal and logic circuit two by time delay module M4 It connects, pin Reset is also connected to by resistance R8 on the anode VCC1 of power supply module one.When control chip exports low level to drawing Foot Reset, pwm signal output shutdown, signal by time delay module M4 for a period of time after by logic circuit two, in pin Pin Fault is caused to obtain effective high level and reset at rising edge when Reset becomes high level.Wherein resistance R8 is pull-up electricity Resistance.
Under-voltage locking module M1, time delay module M2, time delay module M3, time delay module M4 and under-voltage locking module M5 are existing There is technology.Logic circuit one, logic circuit two, logic circuit three and logic circuit four are respectively used to connect between each funtion part Relationship, the prior art can be used.The prior art, such as transformer can be used in isolation circuit one and isolation circuit two.
Highly efficient driver circuit of the present invention is suitable for wide-bandgap power devices, has multi-protective function, effectively prevent power Device is damaged;Can weaken wide-bandgap power devices driving during occur transient voltage and transient current it is excessively high, generate electricity The problem of magnetic disturbance, prevents due to voltage spikes and causes false triggering have good driving effect.
Embodiment two
As shown in figure 3, a kind of highly efficient driver circuit suitable for wide-bandgap power devices of the present embodiment, using integrated mould Formula, isolation circuit one, isolation circuit two, logic circuit one described in embodiment one, logic circuit three, are patrolled at logic circuit two Collect circuit four, grid voltage comparison circuit, drain-source voltage comparison circuit, under-voltage locking module M1, time delay module M2, delay mould Block M3, time delay module M4 and under-voltage locking module M5 are integrated on an isolation drive chip.Highly efficient driver circuit of the present invention It is combined using integrated isolation drive chip with discrete component, circuit structure can be simplified.
Isolation drive chip refers to:Model ISO5852S, ISO5851, ISO5452, ISO5451,1ED020I12-F2, The chip of any one of 2ED020I12-F2 and 1EDU20I12SV.These chip reliabilities are strong, and suitable for broad stopband power Device.
Specifically, in isolation drive chip, pin VCC1 is connect by resistance R1 with the anode of power supply module one, also logical The cathode that capacitance C1 is crossed with power supply module one is connect;The cathode of pin GND1 and pin PWM- respectively with power supply module one is connect.
Pin PWM+ is with controlling the PWM output terminals of chip to connect, the fault-signal input terminal of pin Fault and control chip Connection, for pin Ready with the ready signal input terminal of chip is controlled to connect, pin Reset is defeated with controlling the reset signal of chip Outlet connects, and pin Fault and pin Ready are also connect by resistance R3 and resistance R4 with the anode of power supply module one respectively.
Pin VCC2 is connect with the anode of power supply module two, is also grounded by capacitance C2;Pin GND2 and power supply module two Cathode connection and be grounded, pin VEE2 is grounded by capacitance C3.Pin DESAT protects circuit and power device by drain electrode The grid of drain electrode connection, pin CLAMP and power device connects, and pin OUT passes through gate protection circuit and the grid of power device Pole connects, the source electrode ground connection of power device.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification, Equivalent substitute mode is should be, is included within protection scope of the present invention.

Claims (5)

1. a kind of highly efficient driver circuit suitable for wide-bandgap power devices, it is characterised in that:Including control chip, power supply module First, power supply module two, insulation blocking module and power device;The control chip includes PWM output terminals, ready signal inputs End, fault-signal input terminal and reset signal output terminal;The insulation blocking module include isolation circuit one, isolation circuit two, Logic circuit one, logic circuit two, logic circuit three and logic circuit four;
The PWM output terminals are connect with the input terminal of logic circuit one, and power supply module one passes through under-voltage locking module M1 and logic The input terminal connection of circuit one, the output terminal of logic circuit one is connect with the input terminal of isolation circuit one, to realize power supply module One voltage monitoring, and the pwm signal that PWM output terminals export is transmitted under one voltage normal condition of power supply module;Isolation circuit one Output terminal connect with the input terminal of logic circuit three, power supply module two-way overvoltage/undervoltage locking module M5 is defeated with logic circuit three Enter end connection, and the grid of power device is connect by grid voltage comparison circuit with the input terminal of logic circuit three;Logic electricity The output terminal on road three is connected by the grid of gate protection circuit and power device, to realize two voltage of power supply module and power device The grid voltage monitoring of part, and under and the grid voltage normal condition of power device normal in one voltage of power supply module by described in Pwm signal is sent to the grid of power device by gate protection circuit;
The drain electrode of the power device protects circuit and drain-source voltage comparison circuit and logic electricity by sequentially connected drain electrode The input terminal connection on road four, the output terminal of logic circuit four is connect with the input terminal of isolation circuit two, to realize power device Drain-source voltage monitors, and sends out fault-signal when the drain-source voltage of power device is excessive;The output terminal of isolation circuit two It is connect with the input terminal of logic circuit two;The output terminal of logic circuit two inputs respectively with ready signal input terminal and fault-signal The fault-signal is sent to control chip by end connection to realize;The input terminal of reset signal output terminal and logic circuit two Connection;The ready signal input terminal is connect by resistance R3 with power supply module one;The fault-signal input terminal passes through resistance R4 is connect with power supply module one.
2. the highly efficient driver circuit according to claim 1 suitable for wide-bandgap power devices, it is characterised in that:The leakage Pole protection circuit includes:Capacitance C4, voltage-stabiliser tube ZD1, resistance R10 and diode D2;The drain-source voltage comparison circuit passes through The drain electrode connection of sequentially connected resistance R10 and diode D2 and power device;Drain-source voltage comparison circuit is with resistance R10's Tie point connects the cathode of power supply module two by capacitance C4 with voltage-stabiliser tube ZD1 respectively.
3. the highly efficient driver circuit according to claim 1 suitable for wide-bandgap power devices, it is characterised in that:The grid Pole protection circuit includes:Diode D3, resistance R11, resistance R12, resistance R13 and capacitance C5;The diode D3 and resistance R11 It is in parallel with resistance R12 after series connection;Resistance R11 is connect with the tie point of resistance R12 and the grid of power device;Diode D3 and electricity The tie point of resistance R12 is connect with the output terminal of logic circuit three;The grid of power device are parallel to after resistance R13 and capacitance C5 parallel connections Between pole and source electrode.
4. the highly efficient driver circuit according to claim 1 suitable for wide-bandgap power devices, it is characterised in that:It is described every Compare from circuit one, isolation circuit two, logic circuit one, logic circuit two, logic circuit three, logic circuit four, grid voltage Circuit, drain-source voltage comparison circuit, under-voltage locking module M1 and under-voltage locking module M5 are integrated in an isolation drive chip On.
5. the highly efficient driver circuit according to claim 4 suitable for wide-bandgap power devices, it is characterised in that:It is described every Refer to from driving chip:Model ISO5852S, ISO5851, ISO5452, ISO5451,1ED020I12-F2,2ED020I12- The chip of any one of F2 and 1EDU20I12SV.
CN201810141932.6A 2018-02-11 2018-02-11 High-efficiency driving circuit suitable for wide bandgap power device Active CN108173419B (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110587070A (en) * 2019-08-28 2019-12-20 华南理工大学 Amphibious in-situ electric arc additive manufacturing equipment and method
CN111490528A (en) * 2020-04-23 2020-08-04 国电南瑞科技股份有限公司 Overcurrent protection device suitable for wide bandgap power device
CN112953490A (en) * 2021-02-26 2021-06-11 西安微电子技术研究所 Programmable driving circuit
CN113067564A (en) * 2021-03-31 2021-07-02 无锡英诺赛思科技有限公司 High-efficiency insulation isolation SiC MOSFET gate drive circuit
CN113643882A (en) * 2021-06-30 2021-11-12 北京精密机电控制设备研究所 High-temperature-resistant self-power supply type wide-bandgap power device drive control circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090180303A1 (en) * 2008-01-15 2009-07-16 Fitipower Integrated Technology, Inc. Voltage converter
CN106026621A (en) * 2016-07-19 2016-10-12 武汉理工大学 IGBT drive circuit for preventing short circuit protection blind area and detection method
CN106411297A (en) * 2015-07-29 2017-02-15 国网智能电网研究院 High temperature driving protection circuit based on silicon-on-insulator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090180303A1 (en) * 2008-01-15 2009-07-16 Fitipower Integrated Technology, Inc. Voltage converter
CN106411297A (en) * 2015-07-29 2017-02-15 国网智能电网研究院 High temperature driving protection circuit based on silicon-on-insulator
CN106026621A (en) * 2016-07-19 2016-10-12 武汉理工大学 IGBT drive circuit for preventing short circuit protection blind area and detection method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110587070A (en) * 2019-08-28 2019-12-20 华南理工大学 Amphibious in-situ electric arc additive manufacturing equipment and method
CN110587070B (en) * 2019-08-28 2023-09-29 华南理工大学 Amphibious in-situ arc additive manufacturing equipment and method
CN111490528A (en) * 2020-04-23 2020-08-04 国电南瑞科技股份有限公司 Overcurrent protection device suitable for wide bandgap power device
CN111490528B (en) * 2020-04-23 2022-06-07 国电南瑞科技股份有限公司 Overcurrent protection device suitable for wide bandgap power device
CN112953490A (en) * 2021-02-26 2021-06-11 西安微电子技术研究所 Programmable driving circuit
CN112953490B (en) * 2021-02-26 2023-06-13 西安微电子技术研究所 Programmable driving circuit
CN113067564A (en) * 2021-03-31 2021-07-02 无锡英诺赛思科技有限公司 High-efficiency insulation isolation SiC MOSFET gate drive circuit
CN113067564B (en) * 2021-03-31 2022-03-01 无锡英诺赛思科技有限公司 High-efficiency insulation isolation SiCMOS (silicon-on-insulator-semiconductor field effect transistor) gate drive circuit
CN113643882A (en) * 2021-06-30 2021-11-12 北京精密机电控制设备研究所 High-temperature-resistant self-power supply type wide-bandgap power device drive control circuit

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