CN108172640A - 一种双面发电的碲化镉薄膜太阳能电池及其制备方法 - Google Patents

一种双面发电的碲化镉薄膜太阳能电池及其制备方法 Download PDF

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CN108172640A
CN108172640A CN201711460881.5A CN201711460881A CN108172640A CN 108172640 A CN108172640 A CN 108172640A CN 201711460881 A CN201711460881 A CN 201711460881A CN 108172640 A CN108172640 A CN 108172640A
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彭寿
马立云
潘锦功
殷新建
杨少飞
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Abstract

本发明公开了一种双面发电的碲化镉薄膜太阳能电池及其制备方法，它依次包括玻璃衬底层、透明导电膜层、窗口层、吸收层、背接触层、背电极层、封装材料层和背板玻璃层，所述背接触层的材料选用硫氰酸亚铜，背电极层的材料选用掺钨氧化铟。本发明采用p型材料硫氰酸亚铜做背接触层，掺钨氧化铟做背电极层，实现了碲化镉电池的背部电极透明，进而实现了双面发电，提高了电池的发电量，同时强p型的背接触可以提高内建电场，提高碲化镉太阳电池的Voc和FF，进而提高了电池的性能。

Description

一种双面发电的碲化镉薄膜太阳能电池及其制备方法
技术领域
本发明涉及一种双面发电的碲化镉薄膜太阳能电池及其制备方法，属于太阳能电池技术领域。
背景技术
碲化镉薄膜太阳能电池是以CdTe为吸收材料的一种化合物半导体薄膜太阳电池，因其禁带宽度最佳，弱光效应好，吸光系数大，理论转化效率高、制造成本低等特点受到很多科研机构和企业的关注。碲化镉理论转化效率高达28％，量产最高转化效率已经超过了22％，且仍具有广阔的发展空间。但是目前碲化镉薄膜太阳能电池中背接触层为碳浆背接触层，背电极为金属层背电极，而碳浆和金属都不透明，导致碲化镉薄膜太阳能电池的吸收层无法从背面吸收太阳光，导致碲化镉太阳能电池无法做到双面发电，进一步提高其转换效率。
发明内容
有鉴于此，针对现有技术的不足，本发明提供一种可双面发电的碲化镉薄膜太阳能电池及其制备方法。
为解决以上技术问题，本发明的技术方案首先提供了一种双面发电的碲化镉薄膜太阳能电池，它依次包括玻璃衬底层、透明导电膜层、窗口层、吸收层、背接触层、背电极层、封装材料层和背板玻璃层，其特征在于：所述背接触层的材料选用硫氰酸亚铜，背电极层的材料选用掺钨氧化铟。
进一步的，所述玻璃衬底层的材料选自普通浮法玻璃、超白玻璃、钢化玻璃和半钢化玻璃。
进一步的，所述透明导电膜层的材料选自掺氟的氧化锡。
进一步的，所述窗口层的材料为硫化镉，吸收层的材料为碲化镉。
进一步的，所述封装材料层的材料选自POE、EVA和PVB。
进一步的，所述背板玻璃层的材料选自钢化玻璃和半钢化玻璃。
同时，本发明还提供了上述双面发电的碲化镉薄膜太阳能电池的制备方法，它包括以下步骤：
(1)在玻璃衬底上沉积掺氟氧化锡形成透明导电膜层，沉积温度条件为低于400℃；
(2)在透明导电膜层上沉积硫化镉形成窗口层，沉积温度条件为低于250℃；
(3)在窗口层上沉积碲化镉形成吸收层，沉积温度条件为低于300℃；
(4)在吸收层上沉积硫氰酸亚铜形成背接触层，沉积温度条件为低于300℃；
(5)在背接触层上沉积掺钨氧化铟形成背电极层，沉积温度条件为低于300℃；
(6)用封装材料将沉积好各层的玻璃衬底与背板玻璃进行层压封装。
优选的是，上述玻璃衬底上各层的沉积方式采用低温沉积方式，避免玻璃衬底变形。
现有的碲化镉薄膜太阳能电池，由于背接触层和背电极不透明，无法从背部吸收太阳光，实现双面发电。而一般的透明导电材料功函数低，做背电极时与碲化镉材料的接触势垒过大，阻碍空穴的传输，影响太阳电池的载流子收集效率。本发明采用硫氰酸亚铜(CuSCN)代替碳浆背接触层，掺钨氧化铟代替金属层背电极。由于掺钨氧化铟是一种透过率极高的透明导电氧化物，可见光波段的透过率超过95％，同时又具有高的功函数，功函数高达5.2eV，因此是一种理想的碲化镉薄膜太阳电池的背电极。而采用透明材料硫氰酸亚铜代替碳浆，可以有效的形成背接触，且硫氰酸亚铜为p型材料，有利于增强碲化镉太阳能电池的内建电场。采用硫氰酸亚铜作为背接触层，同时采用掺钨氧化铟做碲化镉太阳电池的背电极可以实现在良好的背接触情况下实现碲化镉太阳电池的双面发电。
与现有技术相比，本发明提供的双面发电的碲化镉薄膜太阳能电池，采用p型材料硫氰酸亚铜做背接触层，掺钨氧化铟做背电极层，实现了碲化镉电池的背部电极透明，进而实现了双面发电，提高了电池的发电量，同时强p型的背接触可以提高内建电场，提高碲化镉太阳电池的Voc和FF，进而提高了电池的性能。
附图说明
图1为本发明双面发电的碲化镉薄膜太阳能电池的结构示意图。
具体实施方式
为了使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步的详细说明。
参见图1，本发明提供了一种双面发电的碲化镉薄膜太阳能电池，它依次包括玻璃衬底层1、透明导电膜层2、窗口层3、吸收层4、背接触层5、背电极层6、封装材料层7和背板玻璃层8，其特征在于：所述背接触层5的材料选用硫氰酸亚铜，背电极层6的材料选用掺钨氧化铟。
优选的是玻璃衬底层1的材料选自普通浮法玻璃、超白玻璃、钢化玻璃和半钢化玻璃。
优选的是透明导电膜层2的材料选自掺氟的氧化锡。
进优选的是窗口层3的材料为硫化镉，吸收层4的材料为碲化镉。
优选的是封装材料层7的材料选自POE、EVA和PVB。
优选的是背板玻璃层8的材料选自钢化玻璃和半钢化玻璃。
下面以具体实施方式说明本发明双面发电的碲化镉薄膜太阳能电池的制备方法。
实施例1：
一种双面发电的碲化镉薄膜太阳能电池的制备方法，包括以下步骤：
(1)在玻璃衬底上沉积掺氟氧化锡形成透明导电膜层，沉积温度条件为低于400℃；
(2)在透明导电膜层上沉积硫化镉形成窗口层，沉积温度条件为低于250℃；
(3)在窗口层上沉积碲化镉形成吸收层，沉积温度条件为低于300℃；
(4)在吸收层上沉积硫氰酸亚铜形成背接触层，沉积温度条件为低于300℃；
(5)在背接触层上沉积掺钨氧化铟形成背电极层，沉积温度条件为低于300℃；
(6)用POE封装材料将沉积好各层的玻璃衬底与背板玻璃进行层压封装得到本发明双面发电的碲化镉薄膜太阳能电池。
上述沉积方法为近空间升华法。
实施例2：
一种双面发电的碲化镉薄膜太阳能电池的制备方法，包括以下步骤：
(1)在玻璃衬底上沉积掺氟氧化锡形成透明导电膜层，沉积温度条件为低于400℃；
(2)在透明导电膜层上沉积硫化镉形成窗口层，沉积温度条件为低于250℃；
(3)在窗口层上沉积碲化镉形成吸收层，沉积温度条件为低于300℃；
(4)在吸收层上沉积硫氰酸亚铜形成背接触层，沉积温度条件为低于300℃；
(5)在背接触层上沉积掺钨氧化铟形成背电极层，沉积温度条件为低于300℃；
(6)用EVA封装材料将沉积好各层的玻璃衬底与背板玻璃进行层压封装得到本发明双面发电的碲化镉薄膜太阳能电池。
上述沉积方法为磁控溅射法。
实施例3(对比实施例)：
一种碲化镉薄膜太阳能电池的制备方法，包括以下步骤：
(1)在玻璃衬底上沉积掺氟氧化锡形成透明导电膜层，沉积温度条件为低于400℃；
(2)在透明导电膜层上沉积硫化镉形成窗口层，沉积温度条件为低于250℃；
(3)在窗口层上沉积碲化镉形成吸收层，沉积温度条件为低于300℃；
(4)在吸收层上沉积碳浆形成背接触层，沉积温度条件为低于300℃；
(5)在背接触层上沉积金属镍形成背电极层，沉积温度条件为低于300℃；
(6)用PVB封装材料将沉积好各层的玻璃衬底与背板玻璃进行层压封装得到碲化镉薄膜太阳能电池。
上述沉积方法为磁控溅射法。
对上述三个实施例得到的电池进行电池性能测定，具体数据见下表所示：
从上表可以看出，实施例1和2的开路电压、短路电流密度、填充因子和效率都比实施例3高，因此本发明提供的双面发电的碲化镉薄膜太阳能电池，实现了电池的双面发电，提高了电池的性能和发电量。
应当指出的是，上述实施方式不应视为对本发明的限制，本发明的保护范围应当以权利要求所限定的范围为准。对于本技术领域的普通技术人员来说，在不脱离本发明的精神和范围内，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (8)

1.一种双面发电的碲化镉薄膜太阳能电池，依次包括玻璃衬底层、透明导电膜层、窗口层、吸收层、背接触层、背电极层、封装材料层和背板玻璃层，其特征在于：所述背接触层的材料选用硫氰酸亚铜，背电极层的材料选用掺钨氧化铟。
2.根据权利要求1所述的一种双面发电的碲化镉薄膜太阳能电池，其特征在于：所述玻璃衬底层的材料选自普通浮法玻璃、超白玻璃、钢化玻璃和半钢化玻璃。
3.根据权利要求1所述的一种双面发电的碲化镉薄膜太阳能电池，其特征在于：所述透明导电膜层的材料选自掺氟的氧化锡。
4.根据权利要求1所述的一种双面发电的碲化镉薄膜太阳能电池，其特征在于：所述窗口层的材料为硫化镉，吸收层的材料为碲化镉。
5.根据权利要求1所述的一种双面发电的碲化镉薄膜太阳能电池，其特征在于：所述封装材料层的材料选自POE、EVA和PVB。
6.根据权利要求1所述的一种双面发电的碲化镉薄膜太阳能电池，其特征在于：所述背板玻璃层的材料选自钢化玻璃和半钢化玻璃。
7.一种双面发电的碲化镉薄膜太阳能电池的制备方法，其特征在于：包括以下步骤：
(1)在玻璃衬底上沉积掺氟氧化锡形成透明导电膜层，沉积温度条件为低于400℃；
(2)在透明导电膜层上沉积硫化镉形成窗口层，沉积温度条件为低于250℃；
(3)在窗口层上沉积碲化镉形成吸收层，沉积温度条件为低于300℃；
(4)在吸收层上沉积硫氰酸亚铜形成背接触层，沉积温度条件为低于300℃；
(5)在背接触层上沉积掺钨氧化铟形成背电极层，沉积温度条件为低于300℃；
(6)用封装材料将沉积好各层的玻璃衬底与背板玻璃进行层压封装。
8.根据权利要求7所述的一种双面发电的碲化镉薄膜太阳能电池的制备方法，其特征在于：所述玻璃衬底上各层的沉积方式采用低温沉积方式。
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