CN108172550A - For the pressure apparatus, switching device and its configuration of electronic power switch device - Google Patents
For the pressure apparatus, switching device and its configuration of electronic power switch device Download PDFInfo
- Publication number
- CN108172550A CN108172550A CN201711282538.6A CN201711282538A CN108172550A CN 108172550 A CN108172550 A CN 108172550A CN 201711282538 A CN201711282538 A CN 201711282538A CN 108172550 A CN108172550 A CN 108172550A
- Authority
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- China
- Prior art keywords
- pressure
- pressure apparatus
- main body
- power semiconductor
- elastomer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229920001971 elastomer Polymers 0.000 claims abstract description 47
- 239000000806 elastomer Substances 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000012528 membrane Substances 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 229920002379 silicone rubber Polymers 0.000 claims description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 239000004945 silicone rubber Substances 0.000 claims description 4
- 239000013536 elastomeric material Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 210000002706 plastid Anatomy 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
- Power Conversion In General (AREA)
- Push-Button Switches (AREA)
Abstract
It is proposed a kind of pressure apparatus for electronic power switch device, it is implemented as including the rigid primary body with planar range, and the elastomer body including elastically deformable, wherein primary body and elastomer body in a manner of positive lock or active lock and are reversibly attached to each other, and wherein elastomer body includes multiple pressure main bodys.In addition, it proposes two electronic power switch devices and includes the configuration of this pressure apparatus.
Description
Technical field
The present invention describes a kind of pressure apparatus for electronic power switch device, the electronic power switch device due to
Following facts can form the basic unit of power semiconductor modular or power electronic system, and the fact is that it passes through itself
Or the mode combined with other preferably identical basic units forms the electric power of power semiconductor modular or power electronic system
Basic electronic component.In addition, the present invention describes the first electronic power switch device and is filled including the second electronic power switch
The configuration put, in each case, the electronic power switch device include pressure apparatus according to the present invention.
Background technology
Such as disclosed in 10 2,013 104 949 B3 of DE prior art discloses a kind of switching device, including
Substrate, power semiconductor component, attachment device, load terminal device and pressure apparatus.In this case, substrate has electricity absolutely
The conductive traces of edge, wherein power semiconductor component are arranged in conductive traces.The attachment device is implemented as membrane complex,
Including conductive film and electrical insulating film, and with the first and second main regions.Switching device is therefore in inside with the side of coincident circuit
Formula connects.Pressure apparatus has pressure main body, which has the first notch, and pressure elements is arranged to dash forward from the first notch
Go out, wherein pressure elements is pressed on the region part of the second main region of membrane complex, and in this case, the region
It is partially disposed in the region along the normal direction projection of power semiconductor component of power semiconductor component.
Invention content
In the case where knowing mentioned condition, the purpose of the present invention is to provide a kind of pressure apparatus, the pressure apparatus
It is simple to manufacture and is also applied for corresponding electronic power switch device and associated the present invention also aims to provide
First switch device and the configuration for including second switch device, in each case the switching device respectively include the pressure
Device.
According to the present invention, the purpose by pressure apparatus with the following characteristics, pass through the with the following characteristics first electricity
It power electronic switching device and is realized by including the configuration of the second electronic power switch device with the following characteristics.
Preferred embodiment is described separately below.
Pressure apparatus according to the present invention for electronic power switch device is implemented as including with planar range
Rigid primary body, and the elastomer body including elastically deformable, wherein primary body and elastomer body are to force to lock
It fixed or active lock mode and is reversibly attached to each other, and wherein elastomer body includes multiple pressure main bodys.
In this case, primary body is preferably implemented in a unitary manner, but in order to which higher load can also be with two parts
Or manifold mode is implemented, especially as the primary body being made of the plastics with metal insert.Positive lock
Or active lock connection is understood to mean that the connection that non-material combines, or only in a manner of positive lock or active lock
Implement or one wherein in the connection of these types forms major part, and corresponding other types of connection is formed
Remainder.
If pressure main body is respectively had features designed to pressure or is arranged for indirectly or directly far from main
The pressure span on switching device is applied on the direction of main body, then it is preferred.In this case, under no-load condition
Pressure span may be implemented as concave surface, plane or convex surface.Only part has such embodiment in each case
It is possible.
If the pressure main body of elastomer body includes coupling part, the coupling part corresponding with primary body first
Attachment device forms positive lock or active lock connection together, then can be advantageous.
If elastomer body includes connection main body, the connection main body is except pressure main body and independently of pressure main body
In the presence of, and the connection main body forms positive lock or active lock together with corresponding second attachment device of primary body
Connection can be similarly advantageous.
In addition, if the pressure main body of elastomer body is connected to each other by connecting plate or elastomer body is prominent to have
The mat-like fashion of the pressure main body gone out is implemented, then can be preferred.
Particularly, primary body can be made of megohmite insulant, preferably high-temperature resistance plastice, preferably thermoplastic, special
It is not polyphenylene sulfide, and in this case the additional stiffening device of for example, metal core form can also be included.It is optional
, primary body can be implemented as metal forming body in itself.Elastomer body can be made of elastomeric material, and elastomeric material is excellent
Silicone elastomer or silicone rubber are selected as, particularly crosslinked liquid silicone.
In addition, if primary body is implemented as the housing or housing parts of power semiconductor modular, then can be advantageous.
First electronic power switch device according to the present invention is implemented as including above-mentioned pressure apparatus, including substrate simultaneously
And including attachment device.In this case, substrate has the conductive traces being electrically insulated from each other and power semiconductor component, should
Power semiconductor component is arranged therein by its first main region in a conductive traces, and is connected with the conductive traces conduction
It connects.In each case, pressure apparatus is pressed in the first area of attachment device by the pressure span of one of pressure main body
On part, the first area part faces pressure apparatus, wherein the first area part is arranged to and power semiconductor portion
Regional alignment of the part in the normal direction of substrate.The region of power semiconductor component is construed as referring to it perpendicular to normal
The planar range in direction.
If attachment device is implemented as the membrane complex for including conductive film and electrical insulating film, wherein switching device passes through company
Connection device is internally connected in a manner of coincident circuit, then is preferred.Attachment device and power semiconductor component or and substrate
Conductive traces the configuration being conductively connected, however, it would be possible to usual manner configuration in the art, that is to say, that as material
With reference to connection or as positive lock connect.
Advantageously, the pressure span of pressure main body is fully located at power semiconductor component and is projected along the normal direction of substrate
Region in.
It is also advantageous that pressure apparatus is pressed in the secondth area of attachment device by the pressure span of other pressure main body
On the part of domain, the second area part faces pressure apparatus, wherein to be partially disposed on existing institute active for the second area
The outside in region that the normal orientation along substrate of rate semiconductor device projects.In other words, pressure is applied on a region,
The region not any regional alignment with one of power semiconductor component or power semiconductor component, but it is embodied in one
The side of a power semiconductor component or if there is multiple power semiconductor components, then be embodied in all these power
The side of semiconductor device.
Configuration according to the present invention is implemented as including the second electronic switching device, and second electronic switching device includes
Above-mentioned pressure apparatus, configuration according to the present invention is implemented as including cooling device, including printed circuit board and including being used for
The pressure introducing device of these parts of press-in connection.In this case, second switch device is implemented as power semiconductor mould
Block.The pressure main body of pressure apparatus is pressed on printed circuit board by pressure introducing device in this manner, so that printing electricity
Road plate is pressed against on the final element of power semiconductor modular, and therefore these final elements are conductively connected to printing electricity
Road plate.As a result, power semiconductor modular is further pressed against on cooling device, and power semiconductor modular thus with cooling
Device connects with heat conduction.
Preferably, heat-conducting layer is arranged between power semiconductor modular and cooling device, is particularly had less than 20 μm, spy
It is not less than 10 μm, the heat-conducting layer for being especially less than 5 μ m thicks.
Certainly, unless foreclosing in itself, the above-mentioned feature mentioned in the singular can plural number presence.Particularly, work(
Rate semiconductor device can exist in corresponding electronic power switch device or its configuration with plural number.
It is self-evident, it is improved to realize, can realize the different configurations of the present invention individually or in any combination.Especially
Be whether they are from it is no referred in the context of pressure apparatus, electronic power switch device or configuration, institute above and below
The feature for referring to and explaining can be not only applied in combination with shown, but also can be applied in combination or can be with it with other
Itself is used, and is made without departing from the scope of the present invention.
Description of the drawings
According to the description hereafter to illustrated example embodiment in Fig. 1 to Figure 11, of the invention is further elucidated above
With advantageous details and be characterized in obvious.
Fig. 1 and Fig. 2 shows pressure apparatus according to the present invention.
Fig. 3 shows the summary of another configuration of pressure apparatus according to the present invention.
Fig. 4 to fig. 6 shows the various configurations of pressure apparatus according to the present invention.
Fig. 7 shows the configuration according to the present invention for including the first electronic power switch device with decomposition diagram.
Fig. 8 shows another first electronic power switch device according to the present invention.
Fig. 9 shows the dress according to the present invention for including the second electronic power switch device according to the present invention with decomposition diagram
It puts.
Configuration according to the present invention and its part is shown respectively in Figure 10 and Figure 11.
Specific embodiment
Fig. 1 and Fig. 2 shows the pressure apparatus 5 according to the present invention suitable for electronic power switch device with viewgraph of cross-section.
In this case, pressure apparatus 5 has primary body 50, and primary body 50 has real in an identical manner in such arrangements
The multiple notch 500 applied.The primary body 50 is formed by heat safe polyphenylene sulfide and can include additional add herein
Strong structure (not shown).
In addition, pressure apparatus 5 has the elastomer body 52 of elastically deformable, it is made of crosslinked liquid silicone,
And it is connected to mutual multiple connecting plates with multiple pressure main bodys 520,522 and by the pressure main body 520,522
540。
Each pressure main body 520,522 of elastomer body 52 is assigned to the notch 500 of primary body 50 and is set
Into for being arranged therein, with reference to figure 2.Connection between elastomer body 52 and primary body 50 is not embodied as material clearly
With reference to connection.Therefore, in contrast to the prior art, pressure apparatus 5 is not produced by bicomponent injection molding method.It is on the contrary, main
Main body 50 and elastomer body 52 is wanted to manufacture independently of one another.This allows to have multiple elastomers 52 of different physical characteristics to connect
To primary body 50, to form pressure apparatus 5 in a particularly simple way.
Another major advantage is simpler, the more cost effective and more flexible production of entire pressure apparatus 5.Especially
Be can more easily implement to Power Electronic Circuit carry out adaptive change, such as attachment device configuration or power partly lead
The quantitative variation of body component.
Connection between primary body 50 and elastomer body 52 is with positive lock (force-locking) or active lock
The mode of (positively locking) is realized with its mixed form.Two modifications of the connection are illustrated herein.The
One modification is the arrangement of mainly positive lock of the pressure main body 520,522 in notch 500, wherein pressure main body 520,522
Size on the x-y plane is slightly larger than the notch 500 of distribution, and therefore after being disposed therein, due to pressure main body
520,522 elastic property and remain at, and form positive lock can reverse connection.Second modification is pressure main body 520,
The arrangement of the 522 mainly active lock in notch.For this purpose, in the configuration, primary body 50 is in corresponding notch
There is the first attachment device or pressure main body 520 to have coupling part in 500.First attachment device or coupling part
It is implemented as one or more lug bosses 504 herein or is implemented as circumferential protruding portion 526, and corresponding mating member
It is implemented as the notch 524,506 of distribution.What the arrangement of lug boss or protruding portion generated active lock can reverse connection.It is mentioned
Connection be entirely elastomer 52 to primary body 50 the first attachment device can reverse connection.The obvious characteristic of these connections exists
In connection is more precisely formed by the formation of pressure main body 520,522 by a part for pressure main body.
Each pressure main body 520,522 has to apply stressed pressure span 560,562 in Power Electronic Circuit.
Two kinds of configurations of the pressure main body 520,522 with different height 580,582 only by way of example are shown herein, are used for
The parallel offset of pressure span 560,562 is formed, referring also to Fig. 8.With it with the effect being equal, additionally or alternatively, though
It is so not shown, but the depth of the notch 500 of primary body 50 can also change.
Fig. 3 shows the summary of another configuration of pressure apparatus 5 according to the present invention.In this case, primary body 50
Without notch, but with protrusion 508 cylinder in terms of its basic configuration.The protrusion is also in its edge
With circumferential protruding portion.The pressure main body 520 of the distribution of elastomer body 52 surrounds the protrusion 508 and protruding portion together,
And primary body 50 is therefore at least mainly reversibly again connected in a manner of active lock, even if as pressure main body 520
The result connection of elasticity also has the part of positive lock.
Pressure span 560 has the planar configuration with recessed recess purely by way of example herein.However principle
On, the shape of pressure span 560,562 is can unrestricted choice and suitable for task.However, in most applications, plane
Or slightly convex shape can admirably complete task, be particularly due in the case where introducing pressure, the material of pressure main body
It is adapted to the surface applied pressure to thereon.
Fig. 4 to fig. 6 shows the various configurations of pressure apparatus according to the present invention with three-dimensional, and wherein Fig. 4 and Fig. 5 are point
Xie Tu, showing in other words in primary body and formed between elastomer body in each case herein can be before reverse connection
State.
Fig. 4 shows the primary body 50 of pressure apparatus 5, and the primary body is implemented as housing parts, is herein power
The plastic lid of semiconductor module, and also there is reinforcement structure.The primary body 50 not only has for elastomer body 52
Pressure main body 520 notch 500, and with for the notch for the connecting plate 540 for interconnecting the pressure main body
500.Reversible connection between elastomer 52 and primary body 50 is formed herein by the connection main body 582 of elastomer body 52, should
Connection main body 582 is connect with the second attachment device 580 of the distribution of primary body 50 into positive lock.As a result, if necessary
Or if necessary, it is convenient to omit the pressure main body of elastic body and the connection of primary body.
Fig. 5 shows the primary body 50 with plane domain, and cushion elastomer body 52,542 is in planar fashion against flat
Face region.Pressure apparatus 520 is protruded from the cushion elastomer body as protrusion.Here, the position of pressure main body 520 and
Diameter, even basic configuration can freely be configured, the configuration without changing primary body 50.The connection of elastomer body 52
Main body 582 and 50 corresponding second attachment device 580 of primary body are arranged in corner region.Main body 582 is connected herein
It is engaged in the corner region around primary body.
Fig. 6 shows to be implemented as the primary body 50 of planar metal forming body, the turning in addition to being disposed with screw device
Except region, the region towards elastomer body 52 of the primary body is completely covered by elastomer body.Elastomer body
52 connection main body 582 surrounds metal forming body in its side, wherein side here forms the second attachment device.
The configuration that Fig. 7 includes the first electronic power switch device 1 according to the present invention so that decomposition diagram to be illustrated to show.The figure
The substrate 2 implemented in principle with usual manner in the art is shown, and it includes insulant plastid 20 and is arranged in it
Upper and electrically insulated from one another conductive traces 22, the conductive traces have different current potentials, particularly loaded level, additionally
There is the switch of adminicle, particularly switching device and measure current potential.It is specifically illustrating herein and provides such as power electronic circuit
Typical half bridge topology, load potential three conductive traces 22.
Corresponding power semiconductor component 7 is disposed in two conductive traces 22, which can this
Usual manner in field is implemented as individually switching, and is implemented as MOS-FET or is implemented with to scheme herein
The IGBT for the power diode being connected in inverse parallel shown.Power semiconductor component 7, more precisely their the first primary area
First contact area 700 in domain is electrically connected to the conductor of distribution in a manner of routine in the art in a manner that material combines
Trace 22 preferably connects 84 by pressure sintering.
The inside connection of switching device 1 is formed by attachment device 3 made of membrane complex, and membrane complex, which has, alternately leads
Electrolemma 30,34 and electrical insulating film 32.In an insulation of the tool there are two conductive film and arrangement between the two just of this membrane complex
Film.In this case, the surface towards substrate 2 of the membrane complex 3 forms the first main region of the film composite material
300, and opposite surface forms the second main region 340 of the film composite material.Particularly, the conductive film 30 of attachment device 3,
34 inherently construct and therefore form the conductive traces part being electrically insulated from each other.The conductive traces part is specifically will be corresponding
Power semiconductor component 7, more precisely its contact area on 2 side of substrate are connected to the conductive traces of substrate
22.In the configuration, conductive traces part is connected to the contact zone of substrate 2 by pressure sintering connection 82 with material combination
Domain.
For external electrical links, electronic power switch device 1, which has, loads and assists final element, only shows to load herein
Final element 100,102.The load terminal element is only implemented as metal forming body 100 by way of example, the metal
Formed body 100 is connected to the conductive traces 22 of substrate 2 contacting footing in a manner of material combination, advantageously again by pressure
Power sintering connection.Be also shown as the load terminal element of contact spring 102 it is in the art it is conventional can arrangement.Principle
On, the part of of attachment device 3 itself can also be implemented as loading or assisting final element.Final element (not shown) is assisted,
Such as grid or sensor terminal are preferably equally implemented with usual manner in the art, particularly with above-mentioned load terminal
Element functionally implemented by identical mode.
Pressure apparatus 5 is carried out as being described such as under Fig. 1, Fig. 2 and Fig. 4, and with primary body 50 and in institute
The pressure main body 520 reversibly arranged in the notch 500 of primary body is stated, the pressure main body is connected with each other by connecting plate.
Implemented in a manner of cushion the pressure span 560 of pressure main body 520.
The configuration also has radiator 9, and the surface of radiator 9 is covered with heat-conducting layer 900, electronic power switch device 10
(more precisely its substrate 2) is arranged on heat-conducting layer 900.In view of the configuration according to the present invention of the arrangement, heat conduction
Layer 900 can have very small thickness, its thickness is between 5 μm and 10 μm herein.In principle, it is possible to completely left out heat conduction
Layer 900.This depends on the roughness of surface structure, particularly radiator 9.
Alternatively and by way of example, the insulating layer 20 of substrate 2 may be implemented as being laminated directly to radiator 9
On electrical insulating film.In this case, conductive traces 22 can also be implemented as the planar conductive element being made of copper.The latter
Advantageously there is the thickness of 0.5mm to 1.0mm.
The configuration also has pressure introducing device 6, which is arranged in top and the tool of attachment device 3
There is spring element 600, which is pressed on pressure apparatus 5 between two parties in the configuration.In a not shown manner against scattered
Pressure 60 is introduced into pressure main body 50 by the pressure introducing device 6 of hot device support.In each case, the pressure 60
It is used as by pressure elements 520 and its pressure span 560 and divides 62 the second main regions 340 for being directly delivered to membrane complex 3
First area part 360.The region part 360 is then by forming positive lock connection and indirectly by film composite material 3
The first main region 300 contact area be pressed into power semiconductor component 7 the second main region the contact area distributed
On 700.The region part 360 is arranged as being projected in the region 760 of power semiconductor component 7 in the normal orientation N of substrate 2
It is interior.
By the pressure 60 of transmission, substrate 2 is arranged by the pressure 68 on radiator 9 and is connect with heat conduction with it.Every
Kind in the case of, both pressure contact, between attachment device 3 and power semiconductor component 7 being conductively connected pressure contact and
On the normal orientation N of substrate and therefore pressure contact is conductively connected between substrate 2 and radiator 9, is partly led in power
It is acted on the normal orientation N of body component 7.Therefore, first, it is efficient between attachment device 3 and power semiconductor component 7
Positive lock and being conductively connected is formed, and the connection shows low-down contact resistance.Secondly, in substrate 2 and radiator 9
Between be formed simultaneously similar efficiencies heat transmit connection, be directed at arrangement, the connection herein due to applying stressed pressure main body 50
Most effective heat is accurately formed at position, that is, power semiconductor component 7 with highest calorific value to transmit.Therefore it can save
The connection of the large area between substrate 2 and radiator 9 and material combination is gone, which is conventional in the art and is difficult to
Resistance to land used manufacture.
Fig. 8 shows another the first electronic power switch device 10 according to the present invention, is similar to and has shown in the figure 7
Go out and the first electronic power switch device.
It shows to include an insulating layer 20 and the substrate 2 of two conductive traces 22 herein.Conductive traces on right side
The power semiconductor component 7 for being implemented as power diode is disposed on 22, and the power semiconductor component 7 passes through material
Conductive traces 22 are conductively connected to reference to connection (being pressure sintering connection 84 herein).
The contact area 700 of power semiconductor component 7, more precisely its second main region away from substrate 2, passes through
Attachment device 3 is conductively connected on left conductor trace 22.For this purpose, attachment device 3 has the first conductive film 30, wherein
The contact area of first conductive film 30 is only connected with the corresponding contact area of power semiconductor component 7 by positive lock here
(but it is not limited to this) is realized.
The positive lock connection is introduced directly into the second primary area of attachment device (being herein membrane complex 3) by partial pressure 62
It is formed on the first area part 360 in domain 340.The corresponding contact position of positive lock connection is preferably provided with gold surface herein,
Particularly several microns of thin layer gold, because these layer gold have best contact performance and contact resistance.In addition, according to EN
In various situations determining ISO 4287, the corresponding contact position of positive lock connection, which has, is less than 5 μm, especially less than 2 μ
The roughness depth (Rz) of m and the mean roughness (Ra) less than 1 μm, especially less than 0.5 μm of mean roughness.
Second contact area of power semiconductor component 7 is conductively connected with left conductor trace 22.For this purpose, film is compound
First metal film 30 of object 3 from power semiconductor component 7 contact position, extension as far as left conductor trace 22 contact position
Put 222.Connection between the contact position 322 of attachment device 3 and the contact position 222 of the conductive traces 22 of substrate 2 is to force
The mode of locking is formed.For this purpose, the other partial pressure 62 of the pressure main body 522 of the distribution of pressure apparatus 5 is introduced in and leads
On the contact position 222,322 of body trace 22 and metal film 30.Therefore, in this case, partial pressure 62 is applied to connection dress
On the second area part 362 of the second main region 340 put, thus the contact area 322 of the first conductive film 30 is pressed against a left side
It is conductively connected on the contact area 222 of side conductor trace 22 and in a manner of positive lock with it.
In order to compensate for first area part 360,362 caused by the thickness as power semiconductor component relative to second area
The offsets in height 382 of part 360,362, with reference to figure 1 and Fig. 2, compared with the height 580 of right side first pressure main body 520, left side
First pressure main body 522 has higher height 582.This is with being assigned to the notch of left pressure main body unlike being assigned to the right side
The fact that the notch of lateral pressure main body is deep is relevant.The difference in height of two pressure main bodys is preferred but is not absolutely essential inclined with height
382 are moved to correspond exactly to.Here, up to 10%, the difference in the range of typically even up to 25% can be tolerated completely.
As the replacement of the positive lock connection between the contact position 222,322 and metal film 30 of conductive traces 22, institute
Pressure sintering connection can also be implemented as or be implemented as some other connections of routine in the art by stating connection.
In addition, attachment device 3 has electrical insulating film 32 and other conductive film 34, electrical insulating film 32 and other conductive film
34 form the inside connection of the other coincident circuit of electronic power switch device 10 in interaction.By conductive film 30,
The electroplating ventilating hole 320 of electrical insulating film 32 between 34 is also shown in this example.
In addition, electronic power switch device 10 also have be arranged in substrate 2, attachment device 3 and power semiconductor component 7 it
Between gap in preferably be gelatinous megohmite insulant 38.The substance is for the of built-in electrical insulation, particularly attachment device 3
Built-in electrical insulation between one conductive film 30 and the right conductor trace 22 of substrate 2.
Fig. 9 shows the apparatus according to the invention with decomposition diagram, including the second electronic power switch according to the present invention
Device and power semiconductor modular.Configuration in this has consisting of part:Pressure introducing device 6, power semiconductor modular
12 pressure apparatus 5, printed circuit board 8, the housing 4 of power semiconductor modular 12 have 2 He of circuit carrier being arranged therein
Cooling device 9.
Cooling device 9 is implemented as air-cooling apparatus, has and has female notch 96.Power semiconductor modular
12 housing 4 is implemented in a manner of cup-shaped herein, and covers circuit carrier 2 towards cooling device 9.There is housing 4 band to guide
Two notch 400 of device 402 are disposed with the final element 42 of distribution in each at this in notch.
Circuit carrier 2 is implemented as with substrate 20, and substrate 20 has the first conductive traces 22 of potential isolation each other.Work(
Rate semiconductor device 7 is arranged in the conductive traces 22 and by its first contact area and the conductive traces distributed respectively
22 are conductively connected.Interconnector is implemented as multiple conducting wires and combines connection 40 herein, this be in the art it is conventional,
The second contact area of power semiconductor component 7 is connected to the first conductive traces by it in a manner of coincident circuit in each case
22 or it is connected in a not shown manner to the second contact area of other power semiconductor components.
Final element 42 be implemented in each case first end section 420 and second end section 422 and
The bolt of the middle section formed therebetween.Bolt shown here is implemented with 3mm with its entirety2The cylinder of cross-sectional area
Body or hollow cylinder, while by having the copper of the face coat of silver to form.In this case, implement in planar fashion herein
First end section 420 there is contact area between final element 42 and circuit carrier 2, more specifically circuit carrier
Contact area, wherein can be the part or attachment device of the first conductive traces 22 with preferred contact area as shown in the figure
A part, if attachment device is implemented as shown in Figure 8.The corresponding end being arranged in the guide device 402 of distribution
End element 42 is protruded by notch 400 from housing 4, and thus the second end section 422 of final element 42 is protruded from housing 4, described
Equally implement to form the external contact devices of power semiconductor modular with plane or convex manner in second end section.
Second end section 422, more precisely its contact area are designed to and the conductor mark for printed circuit board 8
Line, the second conductive traces 82 mechanically and electrically contact.Second conductive traces 82 are designed to herein by power semiconductor mould
Block is connected to load and auxiliary (such as control or sensor) current potential.
Additionally illustrate the pressure apparatus 5 of the configuration.The pressure apparatus have rigid primary body 50 and, it is reversible
Ground is connected to its elastomer body, and the elastomer body has multiple pressure main bodys, pressure span facing towards housing 4 or
The direction of printed circuit board 8.First primary body 50 is formed herein by polyphenylene sulfide, and also there is metal to strengthen knot when necessary
Structure, which is injected or is arranged in the groove for its setting, with reference to figure 10 and Figure 11.Elastomer body is still
It is made of silicone rubber, is so-called crosslinked fluid silicone rubber or alternatively so-called linked solid silicones herein
Rubber.The pressure main body 520 of elastomer body 52 is arranged to be aligned with guide device 402 and therefore also right with final element 42
It is accurate.
Pressure introducing device 6 is implemented as individual screw 620 herein, passes through pressure apparatus 5, printed circuit board 8, shell
The notch 56 being mutually aligned of body 4 and circuit carrier 2,86,46,26, and engage the notch being similarly aligned with of cooling device 9
96.60, which are introduced, by means of the pressure introducing device 6, by pressure realizes the press-in connection of component part referred to.This
In the case of, the pressing of pressure main body 520 64 be aligned with the guide device 402 of housing 4, pressure apparatus 5 to printed circuit board 8
On.Pressure 66 is transmitted on the second end section 422 of final element 42 by the latter, that is, printed circuit board 8, thus described second
It holds and pressure contact connection is formed between part 422 and the second conductive traces 82 of printed circuit board 8, that is to say, that positive lock machine
Tool is connected and is also had and is conductively connected.
Corresponding final element 42 is used to transmit between the second conductive traces 82 and circuit carrier 2 of printed circuit board 8
Electric current.For this purpose, between the first end section of final element 42 420 and the distribution contact area of circuit carrier 2, it is similary logical
Excess pressure introducing device 6 forms (namely positive lock) mechanical connection of pressure contact and is conductively connected.
Further, since the mechanical force by final element 42 is transmitted, circuit carrier 2 is pressed against on cooling device 9, thus
These are mechanically connected in a manner of positive lock.As a result, circuit carrier 2 also has power semiconductor component 7 to the good of cooling device 9
Therefore good thermally coupled can be realized.
Figure 10 and Figure 11 shows the apparatus according to the invention and its component with three-dimensional respectively.Figure 10 diagrams include metal
The pressure apparatus 5 of reinforcement structure, the metallic strengthening structure are implemented as planar metal plate 508 and are arranged in primary body herein
In 50 recess portion, which is formed by plastics, as described in relation to figure 9.As pressure introducing device, screw 620 extends through
It crosses the metallic plate 508 and therefore also extends across the notch of the first primary body 50.The screw 620 further extends through
Notch (with reference to figure 11) printed circuit board 8 and housing 4 of elastomer body and those notch (ginsengs of circuit carrier (invisible)
Examine Fig. 9) it is directly entered cooling device 9.
Figure 11 shows the pressure apparatus according to Figure 10 with decomposition diagram.The diagram shows have for 508 shape of planar metal plate
Formula, metallic strengthening structure primary body and the elastomer body also implemented with mat-like fashion, the elastomer body
Connection main body with multiple pressure main bodys He the second attachment device for being connected to primary body.
Claims (19)
1. the pressure apparatus (5) of electronic power switch device (1) is used for including having the rigid primary body (50) of planar range,
And the elastomer body (52) including elastically deformable, wherein primary body (50) and elastomer body (52) are with positive lock
Or active lock mode and be reversibly attached to each other, and wherein elastomer body (52) includes multiple pressure main bodys
(520,522).
2. pressure apparatus according to claim 1, it is characterised in that:
Pressure main body (520,522) respectively has pressure span (560,562), and pressure span (560,562) are designed to separate
It is applied pressure on switching device on the direction of primary body.
3. pressure apparatus according to any one of the preceding claims, it is characterised in that the pressure main body of elastomer body
(520,522) include coupling part (524,526), the coupling part (524,526) the first connection corresponding with primary body
Device (504,506) forms positive lock or active lock connection together.
4. the pressure apparatus according to preceding claims 1 or 2, it is characterised in that elastomer body includes connection main body
(582), described connection main body (582) second attachment device (580) corresponding with primary body (50) forms pressure lock together
The connection of fixed or active lock.
5. the pressure apparatus according to preceding claims 1 or 2, it is characterised in that the pressure main body of elastomer body (52)
(520,522) are connected to each other by connecting plate (540) or elastomer body is to have prominent pressure main body (520,522)
Mat-like fashion implement.
6. the pressure apparatus according to preceding claims 1 or 2, it is characterised in that primary body (50) is by insulant texture
Into or primary body (50) be made of metal forming body, and elastomer body (52) is made of elastomeric material.
7. according to the pressure apparatus described in preceding claims 6, it is characterised in that primary body (50) is made of high-temperature resistance plastice,
And elastomer body (52) is made of silicone elastomer or silicone rubber.
8. according to the pressure apparatus described in preceding claims 6, it is characterised in that primary body (50) is made of thermoplastic,
And elastomer body (52) is made of crosslinked liquid silicone.
9. according to the pressure apparatus described in preceding claims 6, it is characterised in that primary body (50) is made of polyphenylene sulfide.
10. the pressure apparatus according to preceding claims 1 or 2, it is characterised in that primary body (50) is implemented as power
The housing (4) of semiconductor module or housing parts (40).
11. the first electronic power switch device (10), including pressure apparatus according to any one of the preceding claims,
Including substrate (2) and including attachment device (3), it is characterised in that:
The substrate (2) has the conductive traces (22) being electrically insulated from each other and power semiconductor component (7), the power semiconductor
Component (7) is arranged therein on a conductive traces (22) by its first main region and connected with the conductive traces (22) conduction
It connects;
It is characterized in that in each case, the pressure span (560) that pressure apparatus (5) passes through one of pressure main body (520)
It is pressed on the first area part (360) of attachment device (3), the first area part (360) is in face of pressure apparatus, wherein institute
State first area part (360) be arranged to the region of power semiconductor component (7) substrate (2) normal direction (N) on pair
It is accurate.
12. first switch device according to claim 11, it is characterised in that:
Attachment device (3) is implemented as the membrane complex for including conductive film (30,34) and electrical insulating film (32), wherein switching device
It is internally connected in a manner of coincident circuit attachment device (3).
13. the first switch device according to claim 11 or 12, it is characterised in that:
The pressure span (560) of pressure main body (520) is projected in the normal direction of substrate (2) is fully located at power semiconductor
In the region (760) of component (7).
14. the first switch device according to claim 11 or 12, it is characterised in that:
Pressure apparatus (5) is pressed in the secondth area of attachment device (3) by the pressure span (562) of other pressure main body (522)
On domain part (362), the second area part faces pressure apparatus (5), wherein the second area part (362) is arranged to
The outside in the region (760) of all power semiconductor components (7) is projected in the normal direction (N) of substrate (2).
15. a kind of configuration, including the pressure apparatus (5) described according to any of claims 1 to 10, including the second electronic cutting
Close device (12), second electronic switching device (12) includes cooling device (9), including printed circuit board (8) and including
For the pressure introducing device (6) of these element partial pressures connection, it is characterised in that second switch device (12) is implemented as
Power semiconductor modular (4), and wherein the pressure main body (520,522) of pressure apparatus (5) is pressed in by pressure introducing device (6)
On printed circuit board (8), so that printed circuit board (8) is crushed on the final element (42) of power semiconductor modular (4), and
And these final elements are therefore conductively connected to printed circuit board (8), and power semiconductor modular (4) is further pressed
Onto cooling device (9), and power semiconductor modular (4) is thus connect with heat conduction with cooling device (9).
16. configuration according to claim 15, it is characterised in that:
Heat-conducting layer (900) is arranged between power semiconductor modular (4) and cooling device (9).
17. configuration according to claim 16, it is characterised in that:
Heat-conducting layer (900) has the thickness less than 20 μm.
18. configuration according to claim 16, it is characterised in that:
Heat-conducting layer (900) has the thickness less than 10 μm.
19. configuration according to claim 16, it is characterised in that:
Heat-conducting layer (900) has the thickness less than 5 μm.
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DE102016123697.7A DE102016123697B4 (en) | 2016-12-07 | 2016-12-07 | Printing device for a power electronic switching device, switching device and arrangement herewith |
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DE102020115831B4 (en) | 2020-06-16 | 2024-03-14 | Semikron Elektronik Gmbh & Co. Kg | Power electronic switching device with a printing device |
DE102021115926B3 (en) | 2021-06-21 | 2022-09-01 | Semikron Elektronik Gmbh & Co. Kg | Pressure device for direct or indirect application of pressure to power semiconductor components of a power semiconductor module |
DE102022101511A1 (en) | 2022-01-24 | 2023-07-27 | Semikron Elektronik Gmbh & Co. Kg | Performance switching device with optimized pressure plate |
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DE10258565B3 (en) * | 2002-12-14 | 2004-08-12 | Semikron Elektronik Gmbh | Circuit arrangement for semiconductor components and method for the production |
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CN108172550B (en) | 2023-04-14 |
DE102016123697B4 (en) | 2021-06-24 |
DE102016123697A1 (en) | 2018-06-07 |
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