CN108155258B - A kind of thin-film solar cells flexible substrate that corrosion resistance is strong - Google Patents
A kind of thin-film solar cells flexible substrate that corrosion resistance is strong Download PDFInfo
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- CN108155258B CN108155258B CN201711405855.2A CN201711405855A CN108155258B CN 108155258 B CN108155258 B CN 108155258B CN 201711405855 A CN201711405855 A CN 201711405855A CN 108155258 B CN108155258 B CN 108155258B
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- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 230000007797 corrosion Effects 0.000 title claims abstract description 20
- 238000005260 corrosion Methods 0.000 title claims abstract description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- -1 perfluoroalkyl ethanol Chemical compound 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000004642 Polyimide Substances 0.000 claims abstract description 10
- 229920001721 polyimide Polymers 0.000 claims abstract description 10
- TXQVDVNAKHFQPP-UHFFFAOYSA-N [3-hydroxy-2,2-bis(hydroxymethyl)propyl] octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(CO)(CO)CO TXQVDVNAKHFQPP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010453 quartz Substances 0.000 claims abstract description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 9
- YGSDEFSMJLZEOE-UHFFFAOYSA-N Salicylic acid Natural products OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims abstract description 8
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 8
- 239000004417 polycarbonate Substances 0.000 claims abstract description 8
- 229920000515 polycarbonate Polymers 0.000 claims abstract description 8
- 229960004889 salicylic acid Drugs 0.000 claims abstract description 8
- 230000004927 fusion Effects 0.000 claims abstract description 7
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000835 fiber Substances 0.000 claims abstract description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 5
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 4
- 235000019441 ethanol Nutrition 0.000 claims description 13
- JDIJDQNYSUHWJJ-UHFFFAOYSA-N 1,1,1,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-henicosafluorodecan-2-ol Chemical compound FC(F)(F)C(F)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JDIJDQNYSUHWJJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000002360 preparation method Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 206010070834 Sensitisation Diseases 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 238000011068 loading method Methods 0.000 abstract description 2
- 230000008313 sensitization Effects 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 11
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- FSXXCCWUEAITLC-UHFFFAOYSA-N [Se-2].[Cd+2].[In+3] Chemical compound [Se-2].[Cd+2].[In+3] FSXXCCWUEAITLC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2095—Light-sensitive devices comprising a flexible sustrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
This case is related to a kind of thin-film solar cells flexible substrate that corrosion resistance is strong, including the first lining and the second lining；First lining contains polymethyl methacrylate, quartz fibre, perfluoroalkyl ethanol, pentaerythritol stearate；Second lining contains polycarbonate, polyimides, tantalum powder, salicylic acid isooctyl ester, trichlorosilane；First lining and the second lining are prepared respectively, are then squeezed fusion and are obtained flexible substrate；Thin-film solar cells flexible substrate corrosion resistance provided by the present invention is strong, performance is stable, long service life, it can be used in loading a variety of photoelectric conversion thin-film materials such as silicon substrate class, compounds and dye sensitization, and there is preferable incident photon-to-electron conversion efficiency, preparation process simple possible simultaneously, is with a wide range of applications.
Description
Technical field
The invention belongs to area of solar cell, and in particular to a kind of thin-film solar cells flexible liner that corrosion resistance is strong
Bottom.
Background technique
It is distinguished from the maturity of manufacture of solar cells technology, solar battery can be divided into: crystal silicon solar electricity
Pond and thin-film solar cells.Crystal silicon solar energy battery be built upon high quality single crystal silicon material and it is relevant it is a series of at
On the basis of ripe Treatment technique for processing, due to the relatively stable maturation of its technology, photoelectric conversion efficiency is high, at present in occupation of 80% with
On solar battery market, but the use cost of crystal silicon solar energy battery is very high, and photovoltaic power generation use cost is about
1.18 yuan/degree, much larger than 0.5 yuan/degree of coal electricity.Compared with crystal silicon solar energy battery, thin-film solar cells mostly uses non-
The thin-film materials such as crystal silicon, polysilicon membrane or indium cadmium selenide realize photoelectric conversion, material utilization amount is few, cheap, production from
Dynamicization degree is high, greatly reduces cost in raw material and manufacturing process.
More important point is that flexible substrate can be used in thin-film solar cells, greatly expands solar battery
Application range provides broader space for the development of solar battery.Currently, flexible liner selected by thin film solar cell
Bottom includes flexible metal foil (such as stainless steel substrates) and polymer film (such as polyimide material).Flexible thin-film solar cell
Component will receive natural environment influence, the especially substrate of carrying Heterolamellar photovoltaic conversion film in use in the natural environment outdoors
Always suffer erosion at first, and the corrosion resistance of substrate height is to entire thin-film solar cells service life, product quality
Most important, the corrosion resistance of the flexible substrate of thin-film solar cells is all not satisfactory in the prior art.
Summary of the invention
Aiming at the deficiencies in the prior art, the purpose of the present invention is to provide a kind of film sun that corrosion resistance is strong
It can cell flexible substrate.
The present invention provides a kind of thin-film solar cells flexible substrates that corrosion resistance is strong, including the first lining and second
Lining；First lining contains polymethyl methacrylate, quartz fibre, perfluoroalkyl ethanol, pentaerythritol stearate；
Second lining contains polycarbonate, polyimides, tantalum powder, salicylic acid isooctyl ester, trichlorosilane；First lining and
Two linings are prepared respectively, are then squeezed fusion and are obtained flexible substrate.
Preferably, the parts by weight of each component are as follows in first lining:
Wherein, the perfluoroalkyl ethanol contains in perfluoro hexyl ethyl alcohol, perfluoro octyl ethanol and perfluoro decyl ethyl alcohol
It is one or more.
Preferably, the parts by weight of each component are as follows in second lining:
Wherein, the purity of the tantalum powder is greater than 99.99%.
Preferably, the thickness of first lining is at 80-100 μm.
Preferably, the thickness of second lining is at 150-180 μm.
Preferably, the operation temperature for squeezing fusion is 170-175 DEG C, and the time was at 5-8 seconds.
Preferably, the thickness of the flexible substrate is at 200-300 μm.
Elaboration to the present invention and its advantages: thin-film solar cells flexible substrate provided by the present invention is corrosion-resistant
Property it is strong, translucency is good, performance is stable, long service life, can be used in loading silicon substrate class, compounds and dye sensitization etc. more
Kind photoelectric conversion thin-film material, and there is preferable incident photon-to-electron conversion efficiency, while preparation process simple possible, have and widely answers
Use prospect；Two layers of lining is fused to flexible substrate using instantaneous high-temperature integration technology by the fexible film in the present invention, is being guaranteed
Flexible bottom layer heat surely, under the premise of smooth, moisture-resistant characteristic greatly increases the toughness, corrosion resistance and translucency of substrate, together
When significantly increase the indices of substrate all；Wherein select polymethyl methacrylate, quartz fine in the first lining
Raw material, is passed through spin coating, printing or spray by four kinds of dimension, perfluoroalkyl ethanol and pentaerythritol stearate components after mixing
The mode of painting forms the film of micron level, and the quartz fibre of high-purity can increase the toughness and intensity of film, be not easy it
Jackknifing, quartzy physics and chemical property, which are stablized, has good resistance to ultraviolet and acid and alkali corrosion, in the first lining system with
The collective effect of perfluoroalkyl ethanol and pentaerythritol stearate extends entire lining while guaranteeing translucency
Service life；Two kinds of resin materials of polycarbonate and polyimides are mainly used in second lining to mix, and are inserted ultra-pure
Tantalum powder, under salicylic acid isooctyl ester and trichlorosilane collective effect, tantalum powder can be blended in completely among the second lining, be allowed to
With good corrosion resistance.
Specific embodiment
The present invention will be further described in detail below with reference to the embodiments, to enable those skilled in the art referring to specification
Text can be implemented accordingly.
Embodiment 1
The preparation process of thin-film solar cells flexible substrate involved in the present invention is following, and (all operations are under vacuum
Complete):
(1) on the glass substrate spin coating by 65 parts by weight polymethyl methacrylates, 10 parts by weight quartz fibres, 16 weight
First lining of part perfluoroalkyl ethanol and 8 parts by weight pentaerythritol stearates composition, thickness is at 95 μm or so, at 60 DEG C
It is dry；
(2) on another glass substrate spin coating by 45 weight part polycarbonates, 30 parts by weight polyimides, 8 parts by weight tantalums
Second lining of powder, 6 parts by weight salicylic acid isooctyl esters and 16 parts by weight trichlorosilanes composition, thickness are done at 60 DEG C at 170 μm
It is dry；
(3) it at a high temperature of 170 DEG C, merges the first lining and the first lining to obtain the flexible backing layer with a thickness of 250 μm.
Copper indium selenide flexible thin-film solar cell is further prepared on flexible backing layer according to routine techniques.
Embodiment 2
The preparation process of thin-film solar cells flexible substrate involved in the present invention is following, and (all operations are under vacuum
Complete):
(1) on the glass substrate spin coating by 60 parts by weight polymethyl methacrylates, 8 parts by weight quartz fibres, 15 weight
First lining of part perfluoroalkyl ethanol and 5 parts by weight pentaerythritol stearates composition, thickness is at 90 μm or so, at 60 DEG C
It is dry；
(2) on another glass substrate spin coating by 40 weight part polycarbonates, 25 parts by weight polyimides, 6 parts by weight tantalums
Second lining of powder, 4 parts by weight salicylic acid isooctyl esters and 15 parts by weight trichlorosilanes composition, thickness are done at 60 DEG C at 160 μm
It is dry；
(3) it at a high temperature of 170 DEG C, merges the first lining and the first lining to obtain the flexible backing layer with a thickness of 240 μm.
Embodiment 1 is adjusted in the range of present invention limitation, according to routine techniques in flexible backing layer enterprising one
Copper indium selenide flexible thin-film solar cell is prepared in step.
Comparative example 1
Spin coating is by 75 parts by weight polymethyl methacrylates, 10 parts by weight quartz fibres, 16 parts by weight on the glass substrate
Perfluoroalkyl ethanol, 8 parts by weight pentaerythritol stearates, 40 weight part polycarbonates, 25 parts by weight polyimides, 6 weight
The flexible substrate of part tantalum powder, 4 parts by weight salicylic acid isooctyl esters and 15 parts by weight trichlorosilanes composition, thickness is at 250 μm or so, 60
It is dry at DEG C, copper indium selenide flexible thin-film solar cell is further prepared on flexible substrates according to routine techniques.
Comparative example 2
Quartz fibre in (1) the step of embodiment 1 is replaced with the colourless silica white last reign of a dynasty, remaining forms and prepares and embodiment
1 is identical.
Comparative example 3
The polymethyl methacrylate of pentaerythritol stearate identical weight in (1) the step of embodiment 1 is replaced,
Remaining forms and prepares same as Example 1.
Comparative example 4
The polyimides of polycarbonate identical weight in (2) the step of embodiment 1 is replaced, remaining composition and preparation with
Embodiment 1 is identical.
Comparative example 5
The titanium valve of tantalum powder identical weight in (2) the step of embodiment 1 is replaced, remaining forms and prepares and embodiment 1
It is identical.
Comparative example 6
The polyimides of salicylic acid isooctyl ester identical weight in (2) the step of embodiment 1 is replaced, remaining composition and system
It is standby same as Example 1.
Comparative example 7
Commercially available copper indium selenide flexible thin-film solar cell and its flexible substrate.
The light transmittance of each flexible substrate and copper indium selenide prepared therefrom in testing example 1-2 and comparative example 1-7 respectively
Then flexible substrate is carried out etching operation by the incident photon-to-electron conversion efficiency of flexible thin-film solar cell in ageing oven, carrying out
Prepare copper indium selenide flexible thin-film solar cell again in the flexible substrate of etching operation, wherein extent of corrosion in natural ring
In border quite using 3 years, the light transmittance of each flexible substrate and the incident photon-to-electron conversion efficiency of solar battery are tested respectively；It is each soft
Property substrate and corresponding flexible thin-film solar cell made three batches, every batch of includes the sample of 20-25 same process production
Product, each sample carry out light transmittance and efficiency test, average after removing wherein abnormal data, are reported in Table 1 below respectively.
Can clearly it be found out by the data in table 1, according to prepared by (i.e. embodiment 1 and embodiment 2) of the invention
The translucency of flexible substrate reaches 94% or more, and copper indium selenide flexible thin-film solar cell efficiency reaches 18% or more, just
There is advantage very outstanding for the country, after carrying out simulation nature and corroding operation in 3 years, no matter light transmittance or efficiency
It does not reduce significantly, especially photoelectric conversion efficiency remains to maintain near 18%, illustrate that corrosion resistance of the present invention is good,
Properties of product are stablized, long using the time；The flexible substrate of two steps fusion will be needed only to be mixed with respective raw material in comparative example 1 and one
The transfer efficiency of step preparation, light transmittance and battery is substantially reduced compared with embodiment 1, and the product after etching operation
Can decline it is obvious, illustrate in the present invention with the method for high temperature moment fusion preparation flexible substrate to the translucency of substrate and corrosion-resistant
Property etc. plays a significant role, while also having a major impact to the transformation efficiency of final solar battery product；Comparative example 2-6 difference
Component in first lining and second layer lining is adjusted and changed, it can be found that once change any component,
The corrosion resistance of flexible bottom layer can all decline, and it is significant show as its light transmittance decline before and after carrying out etching operation, and by it
The photoelectric conversion efficiency of the hull cell of preparation is lower, the thin film solar electricity especially prepared with flexible substrate after etching operation
The efficiency in pond is extremely low, this illustrates that each component in each lining produces synergistic effect in entire substrate system, only passes through that
This interaction could effectively enhance its corrosion resistance；Compared by the test result of embodiment 1 and comparative example 7, Ke Yifa
Existing, the corrosion resistance of flexible substrate prepared by the present invention improves a lot compared with similar product.
Table 1
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details.
Claims (6)
1. a kind of thin-film solar cells flexible substrate that corrosion resistance is strong, which is characterized in that served as a contrast including the first lining and second
Layer；First lining contains polymethyl methacrylate, quartz fibre, perfluoroalkyl ethanol, pentaerythritol stearate；Institute
It states the second lining and contains polycarbonate, polyimides, tantalum powder, salicylic acid isooctyl ester, trichlorosilane；First lining and second
Lining is prepared respectively, is then squeezed fusion and is obtained flexible substrate；The operation temperature for squeezing fusion is 170-175 DEG C, the time
At 5-8 seconds.
2. flexible substrate according to claim 1, which is characterized in that the parts by weight of each component are such as in first lining
Under:
Wherein, the perfluoroalkyl ethanol contains one of perfluoro hexyl ethyl alcohol, perfluoro octyl ethanol and perfluoro decyl ethyl alcohol
Or it is a variety of.
3. flexible substrate according to claim 1, which is characterized in that the parts by weight of each component are such as in second lining
Under:
Wherein, the purity of the tantalum powder is greater than 99.99%.
4. flexible substrate according to claim 1, which is characterized in that the thickness of first lining is at 80-100 μm.
5. flexible substrate according to claim 1, which is characterized in that the thickness of second lining is at 150-180 μm.
6. flexible substrate according to claim 1, which is characterized in that the thickness of the flexible substrate is at 200-300 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711405855.2A CN108155258B (en) | 2017-12-22 | 2017-12-22 | A kind of thin-film solar cells flexible substrate that corrosion resistance is strong |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711405855.2A CN108155258B (en) | 2017-12-22 | 2017-12-22 | A kind of thin-film solar cells flexible substrate that corrosion resistance is strong |
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| CN108155258A CN108155258A (en) | 2018-06-12 |
| CN108155258B true CN108155258B (en) | 2019-10-18 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101044205A (en) * | 2004-10-22 | 2007-09-26 | 出光兴产株式会社 | Polycarbonate-based light-diffusing resin composition |
| CN101918619A (en) * | 2008-01-08 | 2010-12-15 | 特来德斯通技术公司 | Highly electrically conductive surfaces for electrochemical applications |
| CN103606633A (en) * | 2013-11-28 | 2014-02-26 | 电子科技大学 | Organic electroluminescence and photovoltaic integration device and manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130203203A1 (en) * | 2010-09-30 | 2013-08-08 | Kiyomi Uenomachi | Manufacturing method for flexible solar cell modules |
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2017
- 2017-12-22 CN CN201711405855.2A patent/CN108155258B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101044205A (en) * | 2004-10-22 | 2007-09-26 | 出光兴产株式会社 | Polycarbonate-based light-diffusing resin composition |
| CN101918619A (en) * | 2008-01-08 | 2010-12-15 | 特来德斯通技术公司 | Highly electrically conductive surfaces for electrochemical applications |
| CN103606633A (en) * | 2013-11-28 | 2014-02-26 | 电子科技大学 | Organic electroluminescence and photovoltaic integration device and manufacturing method |
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