CN108132282B - Preparation method of continuous double-sided heterojunction sandwich structure, product and application thereof - Google Patents
Preparation method of continuous double-sided heterojunction sandwich structure, product and application thereof Download PDFInfo
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- CN108132282B CN108132282B CN201711384785.7A CN201711384785A CN108132282B CN 108132282 B CN108132282 B CN 108132282B CN 201711384785 A CN201711384785 A CN 201711384785A CN 108132282 B CN108132282 B CN 108132282B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
Abstract
The invention discloses a preparation method of a continuous double-sided heterojunction interlayer structure, a product and application thereof, which are characterized in that a porous NiO hollow sphere is obtained by water-soluble nickel salt and then is immersed in InCl3Hydrolyzing the solution to attach InO on the inner and outer layers of the nickel oxide2The dispersed particles of (2) do not require a long reaction process. The performance of the gas sensitive element is regulated and controlled by controlling the concentration, size and distribution of the heterojunction structure. The method is simple to operate, and the prepared heterojunction interlayer structure is uniform in size distribution and controllable in structure and can be used for hydrogen sulfide gas sensitive sensors.
Description
Technical Field
The invention relates to a preparation technology of a semiconductor gas sensor, in particular to a continuous double-sided heterojunction sandwich structure (InO)2-NiO-InO2) The preparation method, the product and the application thereof.
Background
Semiconductor metal oxides have many advantages, such as controllable size, high thermal stability, low cost, simple preparation, high sensitivity, etc., and thus extensive and intensive research on metal oxide semiconductor gas sensors has been conducted. Metal oxide semiconductors are classified into n-type semiconductors and p-type semiconductors according to the difference in carriers. The carriers of n-type and p-type semiconductors are electrons and holes, respectively. The gas-sensitive sensing materials widely used at present mainly comprise pure semiconductor metal oxides, noble metal or rare earth element doped metal oxides and composite oxides forming p-n and n-n heterostructures.
In2O3The material is a gas-sensitive sensing material emerging recently, has become a research hotspot, and has response to various gases.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a preparation method of a continuous double-sided heterojunction sandwich structure.
Yet another object of the present invention is to: provides a continuous double-sided heterojunction sandwich structure product prepared by the method.
Yet another object of the present invention is to: provides an application of the product.
The purpose of the invention is realized by the following scheme: a method for preparing a continuous double-sided heterojunction sandwich structure is provided, wherein the continuous double-sided heterojunction sandwich structure is InO2-NiO-InO2Obtaining porous NiO hollow spheres by using water-soluble nickel salt as a precursor, and then immersing the porous NiO hollow spheres into InCl3Hydrolyzing the solution to attach InO on the inner and outer layers of the nickel oxide2The dispersion particles of (2) specifically comprise the following steps:
(1) dissolving nickel precursor in deionized water to form Ni2+Solution of Ni2+The concentration of the ammonium hydroxide is 0.5-1.0 mol/l, and after the ammonium hydroxide is uniformly stirred, ammonia water or sodium hydroxide is added at room temperature for continuous stirring;
(2) the Ni (OH) prepared in the step (1)2The precipitate was washed with deionized water by centrifugation 3 times, dried in an oven for 12 hours, and then immersed in InCl3Adding ammonia water into the solution to react to form a precipitate, and putting the precipitate into a muffle furnace of 500-800 partsoC, sintering for 3 hours to obtain continuous double-sided heterojunction interlayer structure InO2-NiO-InO2。
On the basis of the scheme, the nickel salt is one of nickel chloride or nickel sulfate, the stirring speed is 300-500 rpm at room temperature, and the stirring time is 30 min.
InCl described in step (2)3The concentration of (b) is 0.5 to 2.0 mol/l.
The invention provides a continuous double-sided heterojunction interlayer structure which is InO2-NiO-InO2Prepared according to any one of the methods described above.
The invention can be expanded to more layers on the basis of the continuous double-sided heterojunction sandwich structure of n-p-n, m (ethyl) -p-m (ethyl) and other types, and compared with the traditional structure, the double-heterojunction structure can be formed on the inner and outer interfaces, thereby multiplying the hole accumulation layer and improving the sensing performance.
The invention provides an application of a continuous double-sided heterojunction sandwich structure in a hydrogen sulfide gas sensitive sensor.
The invention provides a method for obtaining a double-layer heterojunction structure by utilizing the technology on the basis of fully knowing the gas-sensitive principle, has high gas-sensitive activity, is simple to prepare, has strong controllability and can be used for producing gas-sensitive sensing materials. The performance of the gas sensitive element is regulated and controlled by controlling the concentration, size and distribution of the heterojunction structure. The method is simple to operate, and the prepared heterojunction interlayer structure is uniform in size distribution and controllable in structure and can be used for hydrogen sulfide gas sensitive sensors.
Drawings
FIG. 1 InO of continuous double-sided heterojunction sandwich structure2-NiO-InO2Response curves to hydrogen sulfide gas.
Detailed Description
Example 1
0.5 mol/l nickel chloride was dissolved in 50 ml deionized water to form Ni2+Stirring the solution at 300 rpm for 30 min, adding ammonia water at room temperature, and continuing stirring at the same stirring speed for 1 h to obtain Ni (OH)2The precipitate was washed 3 times with deionized water and dried in an oven for 12 h, then immersed in 0.5 mol/l InCl3Adding ammonia water into the solution to form a precipitate, and placing the precipitate in a muffle furnace 500oC sintering for 3h to obtain InO with continuous double-sided heterojunction interlayer structure2-NiO-InO2The response to hydrogen sulfide gas is shown in figure 1.
Example 2
Dissolving 1.0 mol/l nickel chloride in 50 ml deionized water to form Ni2+Stirring the solution at 500 rpm for 30 min, adding ammonia water at room temperature, and continuing stirring at the same stirring speed for 1 h to obtain Ni (OH)2The precipitate was washed 3 times with deionized water and dried in an oven for 12 h, then immersed in 2.0 mol/l InCl3Adding ammonia water into the solution to form a precipitate, and placing the precipitate in a muffle furnace 800oC sintering for 3h to obtain InO with continuous double-sided heterojunction interlayer structure2-NiO-InO2。
Example 3
0.5 mol/l nickel chloride was dissolved in 50 ml deionized water to form Ni2+Stirring the solution at 400 rpm for 30 min, adding ammonia water at room temperature, and continuing stirring at the same stirring speed for 1 h to obtain Ni (OH)2The precipitate was washed 3 times with deionized water and dried in an oven for 12 h, then immersed in 1.2 mol/l InCl3Adding ammonia water into the solution to form a precipitate, and placing the precipitate in a muffle furnace 700oC sintering for 3h to obtain InO with continuous double-sided heterojunction interlayer structure2-NiO-InO2。
Claims (4)
1. A method for preparing a continuous double-sided heterojunction sandwich structure, wherein the continuous double-sided heterojunction sandwich structure is In2O3-NiO- In2O3The method is characterized in that water-soluble nickel salt is used as a precursor to obtain porous NiO hollow spheres, and then the porous NiO hollow spheres are immersed into InCl3Hydrolyzing the solution to attach In to the inner and outer layers of the nickel oxide2O3Comprising the steps of:
(1) dissolving nickel precursor in deionized water to form Ni2+Solution of Ni2+Is 0.5-1.0 mol/l, is evenly stirred, and then ammonia water or sodium hydroxide is added into the mixture at room temperature for continuous stirring to obtain Ni (OH)2Precipitating;
(2) the Ni (OH) prepared in the step (1)2Centrifugally washing the precipitate with deionized water, drying the precipitate in an oven for 12 hours, and then soaking the precipitate in InCl with the concentration of 0.5-2.0 mol/L3Hydrolyzing In the solution, adding ammonia water to react to form a precipitate, putting the precipitate into a muffle furnace to be sintered for 3 hours at 500-800 ℃ to obtain the In with the continuous double-sided heterojunction interlayer structure2O3-NiO-In2O3。
2. The method for preparing a continuous double-sided heterojunction sandwich structure according to claim 1, wherein the nickel salt is one of nickel chloride or nickel sulfate, and the stirring speed is 300-500 rpm at room temperature for 30 min.
3. A continuous double-sided heterojunction sandwich structure, the continuous double-sided heterojunction sandwich structure being In2O3-NiO- In2O3Characterized by being prepared according to the method of claim 1 or 2.
4. Use of the continuous double-sided heterojunction sandwich structure of claim 3 for hydrogen sulfide sensitive sensors.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280498A (en) * | 2013-04-22 | 2013-09-04 | 常州大学 | Preparation method of pointed-cone-shaped zinc oxide/nickel oxide heterojunction diodes |
| RU2537466C2 (en) * | 2013-05-08 | 2015-01-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Method of producing gas sensor material for selective detection of h2s and derivatives thereof |
| CN106784124A (en) * | 2016-12-23 | 2017-05-31 | 浙江大学 | One kind is based on P NiO/N ZnO:Ultraviolet detector of Al heterojunction structures and preparation method thereof |
| CN107285392A (en) * | 2017-06-28 | 2017-10-24 | 济南大学 | A kind of NiO In2O3The preparation method of nano composite material |
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- 2017-12-20 CN CN201711384785.7A patent/CN108132282B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280498A (en) * | 2013-04-22 | 2013-09-04 | 常州大学 | Preparation method of pointed-cone-shaped zinc oxide/nickel oxide heterojunction diodes |
| RU2537466C2 (en) * | 2013-05-08 | 2015-01-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Method of producing gas sensor material for selective detection of h2s and derivatives thereof |
| CN106784124A (en) * | 2016-12-23 | 2017-05-31 | 浙江大学 | One kind is based on P NiO/N ZnO:Ultraviolet detector of Al heterojunction structures and preparation method thereof |
| CN107285392A (en) * | 2017-06-28 | 2017-10-24 | 济南大学 | A kind of NiO In2O3The preparation method of nano composite material |
Non-Patent Citations (1)
| Title |
|---|
| Room temperature H2S micro-sensors with anti-humidity properties fabricated from NiO-In2O3 composite nanofibers;Yue XueJun 等;《Chinese Science Bullrtin》;20130331;第58卷(第7期);821-826 * |
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