CN108117841A - A kind of lapping liquid, the method and chemical and mechanical grinding method for preparing lapping liquid - Google Patents

A kind of lapping liquid, the method and chemical and mechanical grinding method for preparing lapping liquid Download PDF

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Publication number
CN108117841A
CN108117841A CN201611076134.7A CN201611076134A CN108117841A CN 108117841 A CN108117841 A CN 108117841A CN 201611076134 A CN201611076134 A CN 201611076134A CN 108117841 A CN108117841 A CN 108117841A
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China
Prior art keywords
lapping liquid
tio
particle
content
total weight
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CN201611076134.7A
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Chinese (zh)
Inventor
王芬
王立众
禹菲菲
姚文磊
张欢欢
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Priority to CN201611076134.7A priority Critical patent/CN108117841A/en
Publication of CN108117841A publication Critical patent/CN108117841A/en
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472Non-aqueous liquid suspensions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention provides a kind of lapping liquid, and the lapping liquid includes (Fe3N)TiO2Particle and solvent, wherein, (Fe3N)TiO2The content of particle is the 5% to 35% of the lapping liquid gross weight.Lapping liquid having thus described the invention possesses special magnetic property and lapping liquid is increased in magnetic field medium viscosity, effectively reduces being settled in transport, storing process, ensures the stability of lapping liquid.So as to reduce grinding wafer damage in chemical mechanical milling tech, product yield is promoted.Meanwhile lapping liquid magnetic property is reversible, lapping liquid has the function of identical with prior art lapping liquid when being not added with externally-applied magnetic field.

Description

A kind of lapping liquid, the method and chemical and mechanical grinding method for preparing lapping liquid
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of lapping liquid, method and the change of lapping liquid are prepared Learn mechanical grinding method.
Background technology
Widely used at present applied to the lapping liquid that flattening wafer surface is carried out in chemical mechanical milling tech is to incite somebody to action Non-magnetic particle such as SiO2Or Al2O3Or TiO2Scattered lapping liquid in a solvent.These lapping liquids because its at any time and temperature Change unstable free settling, once agglomerating, will scratch crystal column surface, generate rough surface, make under product yield Drop.
For solid particle is avoided to generate the sedimentation prior art in a solvent frequently with ultrasound, stirring and rational temperature To avoid lapping liquid sedimentation, cohesion occur for control.But in storage and transportational process, with the even small temperature of time change Variation all can cause above-mentioned technological means that cannot control, and cause lapping liquid that cohesion, sedimentation occurs.
How in chemical mechanical milling tech is prevented lapping liquid store and transportational process in cohesion, sedimentation, raising grinds Grinding fluid stability, so as to reduce grinding damage of the wafer in chemical mechanical milling tech, it is semiconductor system to promote product yield Make the problem of manufacturer is concerned about for a long time with paying attention to.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will in specific embodiment part into One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
Lapping liquid is storing and cohesion, sedimentation in transportational process, raising grinding in chemical mechanical milling tech in order to prevent Liquid stability so as to reduce grinding damage of the wafer in chemical mechanical milling tech, promotes product yield, the present invention provides A kind of lapping liquid, the lapping liquid include (Fe3N)TiO2Particle and solvent, wherein, (Fe3N)TiO2The content of particle is described The 5% to 35% of lapping liquid gross weight.
Illustratively, described (Fe3N)TiO2Particle is Fe3N cores and the TiO being coated on outside it2Shell is formed.
Illustratively, the Fe3The average grain diameter of N cores is the 100-250nm, (Fe3N)TiO2The average grain diameter of particle For 300-450nm.
Illustratively, the solvent is water or ethyl alcohol.
Illustratively, the lapping liquid further includes metal onidiges, and the metal onidiges are H2O2Or citrate, institute The content for stating metal onidiges is the 1% to 10% of the lapping liquid total weight.
Illustratively, the lapping liquid further includes antisettling agent, and the antisettling agent is polyethylene glycol (PEG) or polyamide Resin, the antisettling agent content are the 0.5% to 2% of the lapping liquid total weight.
Illustratively, the lapping liquid further includes surfactant, the surfactant is Tween (polysorbate), Span (fatty acid sorbitan) or OP (series non-ionic surfactants), the content of the surfactant is the lapping liquid The 0.1% to 1% of total weight.
Illustratively, the lapping liquid further includes PH buffers, and the PH buffers are ammonium citrate or ammonium acetate, described The content of PH buffers is the 1% to 5% of the lapping liquid total weight.
The present invention also provides a kind of method for preparing lapping liquid, including:
Prepare (Fe3N)TiO2Particle;
By (Fe3N)TiO2Particle is mixed with solvent.
Illustratively, the preparation (Fe3N)TiO2The step of particle, includes:
Prepare Fe3N cores;
Prepare TiO2Shell, the TiO2Shell coats the Fe3N cores.
Illustratively, the preparation Fe3The step of N cores is Fe (CO)5With NH3Ammonification pyrolytic reaction process.
Illustratively, Fe (CO) in the reaction5Adding rate be 0.5mL/min-1mL/min, the NH3Addition Rate is 4mL/min-6mL/min, and reaction temperature is 150 DEG C -250 DEG C, reaction time 2-4h.
Illustratively, the preparation TiO2Shell step is (C2H5O)4Ti、NH3In Fe3N cores surface carries out solgel reaction Process.
Illustratively, (C during the solgel reaction2H5O)4The adding rate of Ti is 0.25mL/min-1mL/ min、NH3Adding rate for 2mL/min-3mL/min, the adding rate of water is 0.5mL/min-2mL/min, and reaction temperature is 20 DEG C -70 DEG C, reaction time 2-8h.
Illustratively, it is described by (Fe3N)TiO2The step of particle is mixed with solvent masses (Fe3N)TiO2The content of particle For the 5% to 35% of the lapping liquid gross weight.
Illustratively, the solvent is water or ethyl alcohol.
Illustratively, described the step of preparing lapping liquid, further includes:
1) to (Fe3N)TiO2Particle is mixed with adding in pH buffer in the mixed liquor of solvent, stirred until mixing It is even;
2) antisettling agent and the surfactant and then are again added successively;
3) metal onidiges are finally added and stir 30min.
Illustratively, the metal onidiges are H2O2Or citrate, the content of the metal onidiges is the grinding The 1% to 10% of liquid total weight.
Illustratively, the antisettling agent is PEG or polyamide, and the antisettling agent content is total for the lapping liquid The 0.5% to 2% of weight.
Illustratively, the surfactant is Tween, Span or OP, and the content of the surfactant is ground to be described The 0.1% to 1% of grinding fluid total weight.
Illustratively, the PH buffers are ammonium citrate or ammonium acetate, and the content of the PH buffers is the grinding The 1% to 5% of liquid total weight.
The present invention also provides a kind of chemical and mechanical grinding method, in the method, using grinding provided by the invention Liquid and the lapping liquid provided by the invention prepared prepared by the method for lapping liquid.
Lapping liquid having thus described the invention possesses special magnetic property so that and lapping liquid increases in magnetic field medium viscosity, It effectively reduces and is settled in transport, storing process, improve the stability of lapping liquid.Subtract so as to reduce in chemical mechanical milling tech Few grinding wafer damage, promotes product yield.Meanwhile lapping liquid magnetic property is reversible, lapping liquid has when being not added with externally-applied magnetic field The function identical with prior art lapping liquid.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Figure 1A and 1B is lapping liquid of the magnetically grinding liquid of the present invention under additional magnetic fields and during without externally-applied magnetic field Middle abrasive grains disperse schematic diagram.
Fig. 2 is nucleocapsid structure (Fe in the embodiment of the present invention3N)TiO2The structure diagram of particle.
Specific embodiment
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into Row description.
In order to thoroughly understand the present invention, detailed description will be proposed in following description, to illustrate of the present invention grind Grinding fluid, grinding liquid and preparation method thereof and chemical and mechanical grinding method.Obviously, execution of the invention is not limited to the skill of semiconductor applications The specific details that art personnel are familiar with.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions, The present invention can also have other embodiment.
It should give it is noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root According to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative Intention includes plural form.Additionally, it should be understood that when in the present specification use term "comprising" and/or " comprising " When, it indicates there are the feature, entirety, step, operation, element and/or component, but does not preclude the presence or addition of one or more Other a features, entirety, step, operation, element, component and/or combination thereof.
Now, exemplary embodiment according to the present invention is more fully described with reference to the accompanying drawings.However, these exemplary realities Applying example can be implemented with many different forms, and should not be construed to be limited solely to the embodiments set forth herein.It should These embodiments that are to provide understood are in order to enable disclosure of the invention is thoroughly and complete, and by these exemplary implementations The design of example is fully conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, the thickness of layer and region is exaggerated Degree, and make identical element is presented with like reference characters, thus description of them will be omitted.
Principle according to the present invention is explained below in conjunction with specific embodiment.Following embodiments are not intended to this hair Bright technical solution is defined, it is clear that during technical scheme can also be applied to the preparation of other lapping liquids and apply.
Applied to lapping liquid in chemical mechanical milling tech mainly with non-magnetic particle such as SiO2Or Al2O3Or TiO2Based on Ingredient is wanted to be dispersed in solvent to be formed.These lapping liquids because its at any time with the unstable free settling of temperature change, once occur solidifying It is poly-, it will scratch crystal column surface, generate rough surface, decline product yield.
Lapping liquid is storing and cohesion, sedimentation in transportational process, raising grinding in chemical mechanical milling tech in order to prevent Liquid stability so as to reduce grinding damage of the wafer in chemical mechanical milling tech, promotes product yield, the present invention provides A kind of lapping liquid, the lapping liquid include (Fe3N)TiO2Particle and solvent, wherein, (Fe3N)TiO2The content of particle is described The 5% to 35% of lapping liquid gross weight.
The present invention also provides a kind of method for preparing lapping liquid, the described method includes:Prepare (Fe3N)TiO2Particle;It will (Fe3N)TiO2Particle is mixed with solvent.
Further, the present invention also provides a kind of chemical and mechanical grinding method, the method uses the lapping liquid.
Lapping liquid having thus described the invention possesses special magnetic property so that and lapping liquid increases in magnetic field medium viscosity, It effectively reduces and is settled in transport, storing process, ensure the stability of lapping liquid.Subtract so as to reduce in chemical mechanical milling tech Few grinding wafer damage, promotes product yield.Meanwhile lapping liquid magnetic property is reversible, lapping liquid has when being not added with externally-applied magnetic field The function identical with prior art lapping liquid.
Embodiment one
The present invention provides a kind of lapping liquid, the lapping liquid includes (Fe3N)TiO2Particle and solvent, wherein, (Fe3N) TiO2The content of particle is the 5% to 35% of the lapping liquid gross weight.The present invention uses (Fe3N)TiO2Particle is ground as lapping liquid Abrasive particle main component, magnetism (Fe different from non-magnetic particle in traditional lapping liquid3N)TiO2Particle is in the effect of externally-applied magnetic field It is uniform down, rule to be distributed in lapping liquid such as Figure 1A so that grinding fluid viscosity sharply increases, and can effectively reduce lapping liquid and deposit It is settled in storage and transportational process.Meanwhile the magnetism of magnetic-particle is reversible, and under the action of externally-applied magnetic field is not added with, institute Distributed state of the magnetic-particle in lapping liquid is stated as traditional lapping liquid, as shown in Figure 1B, the lapping liquid is ground with tradition Grinding fluid viscosity is suitable, it is possible to provide with the comparable function of traditional lapping liquid.Magnetism (Fe in the lapping liquid3N)TiO2The content of particle For the 5% to 35% of the lapping liquid gross weight, it is ensured that lapping liquid has certain magnetism in magnetic field and in process of lapping Possess certain amount of abrasive particles, possess certain grinding effect.
Optionally, described (Fe3N)TiO2Particle is Fe3N cores and the TiO being coated on outside it2Shell is formed.Such as Fig. 2 It is shown, (Fe3N)TiO2Particle is Fe3N cores and the TiO being coated on outside it2Shell is formed, wherein Fe3N magnetic cores provide (Fe3N)TiO2Particle is with magnetism, TiO2Shell provides (Fe3N)TiO2Particle is with abrasive hardness.The present embodiment is with nucleocapsid structure (Fe3N)TiO2Particle is explained the principle of the present invention as embodiment, is not intended to (Fe in the present invention3N)TiO2Particle Structure be any limitation as, other can make (Fe3N)TiO2Particle has magnetic and abrasive characteristic (Fe simultaneously3N)TiO2Structure is all It can be applied in lapping liquid provided by the present invention.
Optionally, the Fe3N cores are that average grain diameter is 100-250nm, (the Fe3N)TiO2Particle is that average grain diameter is 300-450nm.As shown in Fig. 2, when preparing the nucleocapsid structure magnetic compound particles, the magnetic particle of such grain size is easy It is wrapped in inside polymer particle, so as to which magnetic particle be avoided to scratch lapped face.
Optionally, the lapping liquid further includes metal onidiges, and the metal onidiges are H2O2Or citrate, it is described The content of metal onidiges is the 1% to 10% of the lapping liquid total weight.The oxidable crystalline substance of metal onidiges in the lapping liquid Circular surfaces metal is easier the metal oxide being ground to be formed, so that grinding is easier to make for.
Optionally, the lapping liquid further includes antisettling agent, and the antisettling agent is PEG or polyamide, described anti- Settle 0.5% to 2% that agent content is the lapping liquid total weight.Antisettling agent rushes to form sky in lapping liquid in the lapping liquid Between net structure, to avoid (Fe3N)TiO2Particle settles.
Optionally, the surfactant is Tween, Span or OP, and the content of the surfactant is the grinding The 0.1% to 1% of liquid total weight.Surfactant can be to (Fe in the lapping liquid3N)TiO2Particle carries out surface modification, modification Ti-OH, so as to avoid (Fe3N)TiO2Particle aggregation.
Optionally, the lapping liquid further includes PH buffers, and the PH buffers are ammonium citrate or ammonium acetate, the PH The content of buffer is the 1% to 5% of the lapping liquid total weight.PH buffers are adjusting in lapping liquid in the lapping liquid PH, to ensure that each component plays optimal performance in lapping liquid.
Optionally, the solvent is water or ethyl alcohol.To ensure in lapping liquid that each component reaches suitable ratio and abundant It is scattered.
Embodiment two
The present invention also provides a kind of method for preparing lapping liquid, including:
Prepare (Fe3N)TiO2Particle;
By (Fe3N)TiO2Particle is mixed with solvent.
Illustratively, the preparation (Fe3N)TiO2The step of particle, includes:
Prepare Fe3N cores;
Prepare TiO2Shell, the TiO2Shell coats the Fe3N cores.
It specifically, can be by first preparing magnetic core Fe3N, then again into enforcement SiO2Shell coats the magnetic core Fe3N and The step of growth, prepares the magnetically grinding particle (Fe3N)SiO2.It is to be appreciated that the present embodiment is with nucleocapsid structure (Fe3N)TiO2The principle of the present invention is explained as embodiment, is not intended to (Fe in the present invention3N)TiO2The knot of particle Structure is any limitation as, other make (Fe3N)TiO2Particle has magnetic and abrasive characteristic (Fe simultaneously3N)TiO2Structure can answer In preparation method for lapping liquid provided by the present invention.
Illustratively, the preparation Fe3The step of N cores is Fe (CO)5With NH3Ammonification pyrolytic reaction process.Specifically, Pass through Fe (CO)5With NH3First carry out ammonification and then the ammonification pyrolytic reaction that is pyrolyzed again in pyrolysis oven in ammonification stove and It is made, wherein, Fe (CO)5With NH3Ammonification pyrolysis prepares Fe3The reaction equation of N is as follows:
To ensure to obtain required grain size and the magnetically grinding particle (Fe of saturation magnetization3N)TiO2, by the magnetic core Fe3The average grain diameter control of N is in 100nm-250nm, at Fe (CO)5With NH3Ammonification pyrolytic reaction in, accurately control reaction The adding speed of temperature and raw material.
Illustratively, at Fe (CO)5With NH3Ammonification pyrolytic reaction in, reaction temperature control at 150 DEG C -250 DEG C, it is described Fe(CO)5Adding rate control for 0.5mL/min-1mL/min, the NH3Adding rate control is 4mL/min-6mL/min, Reaction time can be with 2h-4h in order to control.Specifically, listed in table 1 in three embodiments of the present invention, Fe (CO)5、NH3's Adding rate, reaction temperature, reaction time and obtained Fe3The average grain diameter of N.
Table 1
It is to be appreciated that the present embodiment is with Fe (CO)5With NH3Ammonification pyrolytic reaction explained this as embodiment Invent Fe3The preparation method of N cores is not intended to Fe in the present invention3The preparation method of N cores is limited, other can form Fe3N The preparation method of nuclear particle can be applied in the preparation method of lapping liquid provided by the present invention.
Illustratively, the preparation TiO2Shell step is (C2H5O)4Ti、NH3In Fe3N cores surface carries out solgel reaction Process.Specifically, the magnetic core Fe by the appropriate amount prepared3N is dispersed in water, and is then passed through NH again3、(C2H5O)4Ti and Water, by using (C2H5O)4Ti、NH3It is completed with water via sol-gal process.Wherein by (C2H5O)4Ti、NH3It is prepared with water TiO2Equation it is as follows:
To ensure to obtain required grain size and full abrasive grains (Fe3N)TiO2, (the Fe by described in3N)TiO2Particle is averaged Size controlling is in 300nm-450nm, at Fe (CO)5With NH3Ammonification pyrolytic reaction in, accurately control reaction temperature and raw material Adding speed.
Illustratively, (C during the solgel reaction2H5O)4The adding rate of Ti is 0.25mL/min-1mL/ min、NH3Adding rate for 2mL/min-3mL/min, the adding rate of water is 0.5mL/min-2mL/min, and reaction temperature is 20℃-70℃.Specifically, listed in table 2 in three embodiments of the present invention, (C2H5O)4Ti、NH3With the addition speed of water Rate, reaction temperature, reaction time and the (Fe finally obtained3N)TiO2Average grain diameter.
Table 2
It is to be appreciated that the present embodiment is with (C2H5O)4Ti、NH3In Fe3N cores surface carries out solgel reaction preparation TiO2The method of shell is explained TiO of the present invention as embodiment2The preparation method of shell is not intended to TiO in the present invention2Shell Preparation method be limited, other can form TiO2The preparation method of shell can be applied to lapping liquid provided by the present invention Preparation method in.
Illustratively, (the Fe that will be prepared3N)TiO2Particle is mixed with solvent, to prepare lapping liquid.
Illustratively, magnetism (Fe in the lapping liquid3N)TiO2The content of particle for the lapping liquid gross weight 5% to 35%, it is ensured that lapping liquid has certain magnetism in magnetic field and possesses certain amount of abrasive particles in process of lapping, has Standby certain grinding effect.
Illustratively, the solvent is water or ethyl alcohol.To ensure in lapping liquid that each component reaches suitable ratio and fills It is scattered.
Illustratively, described the step of preparing lapping liquid, further includes:
1) to (Fe3N)TiO2Particle in the mixed liquor of solvent add in state pH buffer mix, stir until mix Uniformly;
2) antisettling agent and the surfactant and then are again added successively;
3) metal onidiges are finally added and stir 30min.
Illustratively, the PH buffers are ammonium citrate or ammonium acetate, and the content of the PH buffers is the grinding The 1% to 5% of liquid total weight.PH buffers are each in lapping liquid to ensure to adjust PH in lapping liquid in the lapping liquid Component plays optimal performance.
Illustratively, the antisettling agent is PEG or polyamide, and the antisettling agent content is total for the lapping liquid The 0.5% to 2% of weight.Antisettling agent rushes to form space net structure in lapping liquid in the lapping liquid, to avoid (Fe3N) TiO2Particle settles.
Illustratively, the surfactant is Tween, Span or OP, and the content of the surfactant is ground to be described The 0.1% to 1% of grinding fluid total weight.Surfactant can be to (Fe in the lapping liquid3N)TiO2Particle carries out surface modification, repaiies Ti-OH is adornd, so as to avoid (Fe3N)TiO2Particle aggregation.
Here it is given at that one embodiment of the present of invention is detailed, to describe the tool of the method for the present invention for preparing lapping liquid Body step, including:(the Fe of lapping liquid gross weight 15% is added in first into solvent3N)TiO2Particle is sufficiently mixed;Then, to mixed (the Fe got togather3N)TiO2Addition is calculated as 2% ammonium citrate with lapping liquid gross weight in solution, stirs until being uniformly mixed;Then, It adds successively and 1% polyamide is calculated as with lapping liquid gross weight and is calculated as with lapping liquid gross weight 0.5% Span, be stirred Uniformly;It is last add again be calculated as with lapping liquid gross weight 1.0% H2O2, and stir about 30 minutes, so as to obtain the lapping liquid.
The various parameters of the lapping liquid finally obtained in embodiment 1-3 are listed in table 3
Table 3
As shown in Table 3, there is the magnetic, viscosity in magnetic field drastically by the obtained lapping liquid of preparation method of the present invention Ground increases and with broader temperature window, therefore the lapping liquid is highly stable, it is not easy to the solidifying of abrasive grains occur Poly- and precipitation, ensures that the stability of chemical mechanical milling tech, reduce wafer scrapes trace problem or coarse defect.This Outside, the magnetism of the lapping liquid obtained by the method for the present invention is reversible, as shown in table 3, when the lapping liquid is not or not magnetic field When middle, the lapping liquid has and the comparable normal viscosity of existing lapping liquid.
Embodiment three
The present invention also provides a kind of chemical and mechanical grinding method, due in the method, the tool except using the present invention It is other identical with conventional chemical and mechanical grinding method outside magnetic lapping liquid, therefore do not go to live in the household of one's in-laws on getting married to this method at this It states.
In conclusion lapping liquid having thus described the invention possesses special magnetic property so that lapping liquid is in magnetic field Viscosity increases, and effectively reduces being settled in transport, storing process, ensures the stability of lapping liquid.It is ground so as to reduce in chemical machinery Grinding wafer damage is reduced in grinding process, promotes product yield.Meanwhile lapping liquid magnetic property is reversible, when being not added with externally-applied magnetic field Lapping liquid has the function of identical with prior art lapping liquid.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to Citing and the purpose of explanation, and be not intended to limit the invention in the range of described embodiment.In addition people in the art Member is it is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by The appended claims and its equivalent scope are defined.

Claims (22)

1. a kind of lapping liquid, which is characterized in that the lapping liquid includes (Fe3N)TiO2Particle and solvent, wherein, (Fe3N)TiO2 The content of particle is the 5% to 35% of the lapping liquid gross weight.
2. the lapping liquid as described in claim 1, which is characterized in that (Fe3N)TiO2Particle is Fe3N cores and it is coated on it The TiO of outside2Shell is formed.
3. lapping liquid as claimed in claim 2, which is characterized in that the Fe3The average grain diameter of N cores is 100-250nm, described (Fe3N)TiO2The average grain diameter of particle is 300-450nm.
4. lapping liquid as described in claim 1, which is characterized in that the solvent is water or ethyl alcohol.
5. lapping liquid as described in claim 1, which is characterized in that the lapping liquid further includes metal onidiges, the metal Oxidant is H2O2Or citrate, the content of the metal onidiges are the 1% to 10% of the lapping liquid total weight.
6. lapping liquid as described in claim 1, which is characterized in that the lapping liquid further includes antisettling agent, the anti-settling Agent is polyethylene glycol or polyamide, and the antisettling agent content is the 0.5% to 2% of the lapping liquid total weight.
7. lapping liquid as described in claim 1, which is characterized in that the lapping liquid further includes surfactant, the surface Activating agent is Tween, Span or OP, and the content of the surfactant is the 0.1% to 1% of the lapping liquid total weight.
8. lapping liquid as described in claim 1, which is characterized in that the lapping liquid further includes PH buffers, the PH bufferings Agent is ammonium citrate or ammonium acetate, and the content of the PH buffers is the 1% to 5% of the lapping liquid total weight.
9. a kind of method for preparing lapping liquid, including:
Prepare (Fe3N)TiO2Particle;
By (Fe3N)TiO2Particle is mixed with solvent.
10. method as claimed in claim 9, which is characterized in that the preparation (Fe3N)TiO2The step of particle, includes:
Prepare Fe3N cores;
Prepare TiO2Shell, the TiO2Shell coats the Fe3N cores.
11. method as claimed in claim 10, which is characterized in that the preparation Fe3The step of N cores is Fe (CO)5With NH3's Ammonification pyrolytic reaction process.
12. method as claimed in claim 11, which is characterized in that Fe (CO) in the reaction5Adding rate be 0.5mL/ Min-1mL/min, the NH3Adding rate for 4mL/min-6mL/min, reaction temperature is 150 DEG C -250 DEG C, the reaction time For 2-4h.
13. method as claimed in claim 10, which is characterized in that the preparation TiO2Shell step is (C2H5O)4Ti、NH3 Fe3N cores surface carries out solgel reaction process.
14. method as claimed in claim 13, which is characterized in that (C during the solgel reaction2H5O)4Ti's adds Rate of acceleration is 0.25mL/min-1mL/min, NH3Adding rate for 2mL/min-3mL/min, the adding rate of water is 0.5mL/min-2mL/min, reaction temperature are 20 DEG C -70 DEG C, reaction time 2-8h.
15. method as claimed in claim 9, which is characterized in that described by (Fe3N)TiO2The step of particle is mixed with solvent is big Crowd (Fe3N)TiO2The content of particle is the 5% to 35% of the lapping liquid gross weight.
16. method as claimed in claim 9, which is characterized in that the solvent is water or ethyl alcohol.
17. method as claimed in claim 9, which is characterized in that described the step of preparing lapping liquid further includes:
1) to (Fe3N)TiO2Particle is with adding in pH buffer mixing, stirring until being uniformly mixed in the mixed liquor of solvent;
2) antisettling agent and the surfactant and then are again added successively;
3) metal onidiges are finally added and stir 30min.
18. method as claimed in claim 17, which is characterized in that the metal onidiges are H2O2Or citrate, the metal The content of oxidant is the 1% to 10% of the lapping liquid total weight.
19. method as claimed in claim 17, which is characterized in that the antisettling agent is PEG or polyamide, described anti-heavy Depressant prescription content is the 0.5% to 2% of the lapping liquid total weight.
20. method as claimed in claim 17, which is characterized in that the surfactant be Tween, Span or OP, the table The content of face activating agent is the 0.1% to 1% of the lapping liquid total weight.
21. method as claimed in claim 17, which is characterized in that the PH buffers be ammonium citrate or ammonium acetate, the PH The content of buffer is the 1% to 5% of the lapping liquid total weight.
22. a kind of chemical and mechanical grinding method, which is characterized in that in the method, any one of usage right requirement 1-8 institutes The lapping liquid stated.
CN201611076134.7A 2016-11-29 2016-11-29 A kind of lapping liquid, the method and chemical and mechanical grinding method for preparing lapping liquid Pending CN108117841A (en)

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CN113442056A (en) * 2021-07-15 2021-09-28 湖北鼎汇微电子材料有限公司 Polishing pad, preparation method thereof and manufacturing method of semiconductor device

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Application publication date: 20180605