CN108112184B - Manufacturing method of S-band 100-watt pulse power amplifier - Google Patents
Manufacturing method of S-band 100-watt pulse power amplifier Download PDFInfo
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- CN108112184B CN108112184B CN201711064670.XA CN201711064670A CN108112184B CN 108112184 B CN108112184 B CN 108112184B CN 201711064670 A CN201711064670 A CN 201711064670A CN 108112184 B CN108112184 B CN 108112184B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/16—Inspection; Monitoring; Aligning
- H05K2203/162—Testing a finished product, e.g. heat cycle testing of solder joints
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Abstract
The invention discloses a manufacturing method of an S-band 100-watt pulse power amplifier, which specifically comprises the following steps: the method comprises the following steps: sintering S-band 100W pulse power amplifier microwave module circuit board components; step two: sintering components of a circuit board of a power supply module of the S-band 100-watt pulse power amplifier; step three: sintering and assembling the microwave module circuit board and the components on the cavity; step four: assembling a power module circuit board and components on the cavity in a welding manner; step five: and debugging, testing, capping and marking the assembled component. The manufacturing method of the S-band 100-watt pulse power amplifier provided by the invention has the advantages that the process flow is scientific, simple and convenient, the qualification rate of the produced products is greatly improved compared with the prior art, the equipment investment cost is low, the requirement on the quality of production staff is not high, the production staff can be put on duty after being subjected to basic training, and the manufacturing method is suitable for small-batch production.
Description
Technical Field
The invention relates to a manufacturing method of an S-band 100-watt pulse power amplifier, belonging to the technical field of manufacturing and processing processes of microwave modules.
Background
The S wave band is widely applied to the fields of signal relay, satellite communication, radar communication and the like. The shadow area problem of the S-band signal can be generated due to the self characteristic in the transmission process, and an S-band ground supplementary network is established for solving the shadow area problem of the S-band satellite signal.
In the S-band ground supplementary transmitting process, two transmitting modes of frequency shift and common frequency are adopted according to the shadow shielding range and the actual coverage environment. Regardless of the frequency shift forwarding mode or the same frequency forwarding mode, the signals received on the ground are finally re-transmitted at the S-band frequency after frequency conversion and amplification, so that the S-band signals in the coverage range meet the receiving requirements. The invention relates to an amplifier part which amplifies a received signal and then retransmits the amplified signal in an S wave band.
The problems that the cost is too high, the defective rate is too high and the production efficiency is low in the existing production and manufacturing are all needed to be solved urgently.
Disclosure of Invention
The purpose is as follows: in order to overcome the defects in the prior art, the invention provides a manufacturing method of an S-band 100-watt pulse power amplifier.
The technical scheme is as follows: in order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a manufacturing method of an S-band 100-watt pulse power amplifier specifically comprises the following steps:
the method comprises the following steps: sintering S-band 100W pulse power amplifier microwave module circuit board components;
step two: sintering components of a circuit board of a power supply module of the S-band 100-watt pulse power amplifier;
step three: sintering and assembling the microwave module circuit board and some components on the cavity;
step four: assembling a power module circuit board and some components on the cavity in a welding manner;
step five: and debugging, testing, capping and marking the assembled component.
Further, the first step comprises the following steps:
1.1 respectively placing a cavity of an S-waveband 100-watt pulse power amplifier, a microwave module circuit board and a power module circuit board in a culture dish filled with 60 ℃ absolute ethyl alcohol, scrubbing, cleaning, then placing the cavity, the microwave module circuit board and the power module circuit board in a 50 ℃ oven for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃;
1.2, opening a dispenser and adopting a continuous dispensing mode, setting the pressure of the dispenser to be 45-60psi, dispensing a proper amount of soldering paste with a melting point of 217 ℃ and a component of A L PHA OM338 at a pad of a circuit board of the microwave module, slightly clamping the components by using tweezers, and correctly placing the components at the pad of the circuit board of the microwave module, which is coated with the soldering paste;
1.3, setting the temperature of a heating platform to be 250 +/-5 ℃, and placing the 1.2 component to be sintered on the heating platform at 250 +/-5 ℃ for sintering; observing under a microscope, and correcting by using tweezers if the components shift and warp in the sintering process; after sintering, placing the sintered component on filter paper for natural cooling;
1.4 cleaning the assembly cooled by 1.1 by using a vapor phase cleaning machine, placing the microwave module circuit board of the sintered component in a cleaning tank filled with an ABZO L CEG C L EANER cleaning agent at 60 ℃ for hot boiling for 20 +/-1 minutes, taking out the microwave module circuit board, placing the microwave module circuit board in a culture dish filled with absolute ethyl alcohol at 60 ℃ for scrubbing, placing the cleaned assembly in a drying oven at 50 ℃ for baking for 5 +/-1 minute, and naturally cooling to 22-25 ℃ for later use.
Further, the second step comprises the following steps:
2.1, opening a dispenser and adopting a continuous dispensing mode, setting the pressure of the dispenser to be 45-60psi, dispensing and coating a proper amount of soldering paste with a melting point of 217 ℃ and a component of A L PHA OM338 at the bonding pad of the power module circuit board cleaned at 1.1, clamping the component by using tweezers, and correctly placing the component at the bonding pad of the power module circuit board coated with the soldering paste;
2.2 setting the temperature of the heating platform to be 250 +/-5 ℃, and placing the 2.1 component to be sintered on the heating platform at 250 +/-5 ℃ for sintering; observing under a microscope, and correcting by using tweezers if the components shift and warp in the sintering process; after sintering, placing the sintered component on filter paper for natural cooling;
2.3 cleaning the assembly cooled in 2.2 by using a vapor phase cleaning machine, placing the power module circuit board of the sintered component in a cleaning tank filled with an ABZO L CEG C L EANER cleaning agent at 60 ℃ for hot boiling for 20 +/-1 minutes, taking out the component and placing the component in a culture dish filled with absolute ethyl alcohol at 60 ℃ for scrubbing, placing the cleaned assembly in an oven at 50 ℃ for baking for 5 +/-1 minute, and naturally cooling to 22-25 ℃ for later use.
Further, the third step includes the following steps:
3.1 printing SN63CR32 solder paste with the melting point of 183 ℃ on the back surface of the microwave module circuit board cleaned by 1.4; and the circuit board is correctly arranged on the cavity;
3.2 setting the temperature of the heating platform to be 190 +/-5 ℃, placing the 3.1 component with the microwave circuit board on the heating platform for sintering, observing under a microscope, and correcting the circuit board by using tweezers in time if the circuit board deviates in the sintering process to ensure that the welding process is accurate and correct; when the soldering tin is melted, a proper amount of rosin water is added by an injector to improve the penetration rate; after welding, taking the welded assembly off the heating platform, and placing the assembly on filter paper for natural cooling;
3.3 cleaning by using a vapor phase cleaning machine, placing the components of the sintered microwave circuit board in a cleaning tank containing ABZO L CEG C L EANER cleaning agent with the temperature of 60 ℃ for hot boiling for 20 +/-1 minutes, taking out the components, placing the components in a culture dish containing 60 ℃ absolute ethyl alcohol for scrubbing, washing gaps around the circuit board for 5 +/-1 minutes, placing the cleaned components in a 50 ℃ oven for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃ for later use.
And 3.4, fixing the amplifier on the cavity by using screws, and welding the pins of the amplifier on the circuit board pads by using soldering wires at 120 ℃.
Further, the fourth step includes the steps of:
4.1 fixing the power module circuit board cleaned by 2.3 on the cavity by using screws, fixing the voltage regulating module on the cavity, and welding pins of the voltage regulating module on circuit board pads by using solder wires at 120 ℃;
4.2 welding W1, W3 by using phi 0.3mm high-temperature wires, W2 by using phi 0.5 wires, W4, W5 by using phi 1 wires, W6 by using phi 0.3 copper wires, W7 by using phi 1.5 wires and by using solder wires at 120 ℃; w1, W2, W3, W4, W5, W6 and W7 are all welding pads which need to be connected by separate leads on the circuit board;
and 4.3, fixing the radio frequency connector joint and the microstrip connector joint on the cavity by using screws, and welding the pins on the circuit board welding pads by using soldering wires at 120 ℃.
Further, the fifth step includes: after the peripheral circuit and the instrument are connected, the assembled component can be debugged and tested, and after the debugging and the testing are completed, the cover is closed and the mark is marked.
Thus, the S-band 100-watt pulse power amplifier is manufactured.
Has the advantages that: according to the manufacturing method of the S-band 100-watt pulse power amplifier, the S-band 100-watt pulse power amplifier produced by the process is tested, subjected to environmental experiments and debugged on site, and various technical performance indexes completely meet the requirements of the whole machine. The technological process for producing the amplifier is scientific and simple, the qualification rate of the produced products is greatly improved compared with the prior art, the equipment investment cost is low, the requirement on the quality of production staff is not high, the amplifier can be put on duty after being basically trained, and the amplifier is suitable for small-batch production.
Drawings
FIG. 1 is a schematic diagram of a cavity structure of an S-band 100W pulse power amplifier;
FIG. 2 is a schematic diagram of sintering of components of a microwave module circuit board of an S-band 100W pulse power amplifier;
FIG. 3 is a schematic diagram of sintering of components of a circuit board of a power module of a S-band 100W pulse power amplifier;
FIG. 4 is a schematic diagram of a sintering assembly of a circuit board of a microwave module of an S-band 100W pulse power amplifier;
fig. 5 is a schematic diagram of the circuit board assembly of the S-band 100 w pulse power amplifier power module.
Detailed Description
The present invention will be further described with reference to the accompanying drawings.
A manufacturing process of an S-band 100-watt pulse power amplifier specifically comprises the following steps:
step 1: sintering of S-band 100-watt pulse power amplifier microwave module circuit board components:
1.1 respectively putting the cavity of the S-waveband 100-watt pulse power amplifier, the microwave module circuit board and the power module circuit board in a culture dish filled with absolute ethyl alcohol at 60 ℃ and brushing the cavity, the microwave module circuit board and the power module circuit board by using a yellow soft hair brush, after the cavities, the microwave module circuit board and the power module circuit board are cleaned, placing the cavities, the microwave module circuit board and the power module circuit board in a drying oven at 50 ℃ for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃.
1.2, opening a dispenser, adopting a continuous dispensing mode, setting the pressure of the dispenser to be 45-60psi, dispensing a proper amount of melting point component A PHA OM338 solder paste at a pad of a microwave module circuit board, slightly clamping a component by using tweezers, and correctly placing the component at the pad of the microwave module circuit board coated with the solder paste, wherein the specific component placement position refers to a schematic diagram of sintering of the component of the microwave module circuit board of the S-band 100-watt pulse power amplifier, and the list of the components to be sintered comprises that A is 3M9009, A is AM-FM-R, A is 11306-3, C, C, C, C, C, C0603V 102, C is a chip capacitor JCC 06050V 103, 2 is a chip inductor nH, R, R, R omega is R, R, R and R is a chip resistor 50R, R is a chip load omega R, R is 50R, R and R is a chip resistor R.
1.3 the temperature of the heating platform is set to be 250 +/-5 ℃, and the component to be sintered 1.2 is placed on the heating platform at 250 +/-5 ℃ for sintering. And (4) observing under a microscope, and slightly correcting by using tweezers if the components shift and warp in the sintering process. And after sintering, placing the sintered assembly on filter paper for natural cooling.
1.4 cleaning the assembly cooled by 1.3 by using a vapor phase cleaning machine, placing the microwave module circuit board of the sintered component in a cleaning tank filled with an ABZO L CEG C L EANER cleaning agent at 60 ℃ for hot boiling for 20 +/-1 minutes, taking out the assembly, placing the assembly in a culture dish filled with absolute ethyl alcohol at 60 ℃ for scrubbing by using a yellow soft hair brush, placing the cleaned assembly in a drying oven at 50 ℃ for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃ for later use.
Step 2: sintering of circuit board components of the S-band 100-watt pulse power amplifier power module:
2.1, a dispenser is opened in a continuous dispensing mode, the pressure of the dispenser is set to 45-60psi, a proper amount of soldering paste with melting point 217 ℃ and component A L PHA OM338 is dispensed at a pad of a circuit board of a power module cleaned by 1.1, the components are gently clamped by tweezers and are correctly placed at the pad of the circuit board of the power module coated with the soldering paste, the specific component placement position refers to a sintering schematic diagram of the circuit board of the power module of the S-band 100-watt pulse power amplifier in FIG. 3, the list of the components to be sintered is that 1C L is 50V/10uF (D), 1C L, 1C L, 1C L, 1C L, 1C L, 1C L, 1C L, 1C L, 1C L, 361C L, 361C L, 361C 1C L, 361C L, 361C L, 361C L, 361C L, 361C L, 361C L, 361C 1C 361C L, 361C L, 361C L, 361C L, 361C 1C L, 361C 1C L, 36.
2.2 the temperature of the heating platform is set to be 250 +/-5 ℃, and the 2.1 component to be sintered is placed on the heating platform at 250 +/-5 ℃ for sintering. And (4) observing under a microscope, and slightly correcting by using tweezers if the components shift and warp in the sintering process. And after sintering, placing the sintered assembly on filter paper for natural cooling.
2.3 cleaning the assembly cooled in 2.2 by using a vapor phase cleaning machine, placing the power module circuit board of the sintered component in a cleaning tank containing an ABZO L CEG C L EANER cleaning agent at 60 ℃ for hot boiling for 20 +/-1 minutes, taking out the component, placing the component in a culture dish containing absolute ethyl alcohol at 60 ℃ for scrubbing by using a yellow soft hair brush, placing the cleaned component in an oven at 50 ℃ for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃ for later use.
And step 3: sintering and assembling microwave module circuit board and some components on cavity
3.1 printing SN63CR32 solder paste with the melting point of 183 ℃ on the back surface of the microwave module circuit board cleaned in 1.4. And the circuit board is correctly arranged on the cavity, the specific arrangement position is shown in figure 4, and the sintering assembly schematic diagram of the circuit board of the S-band 100-watt pulse power amplifier microwave module is shown.
3.2 the temperature of the heating platform is set to be 190 +/-5 ℃, the assembly with the 3.1 placed microwave circuit board is placed on the heating platform for sintering, and the assembly is observed under a microscope, if the circuit board deviates in the sintering process, the circuit board is slightly corrected by using tweezers in time, so that the accuracy of the welding process is ensured. When the soldering tin is melted, a proper amount of rosin water is added by a medical injector to improve the penetration rate. And after the welding is finished, taking the welded assembly down from the heating platform, and placing the assembly on filter paper for natural cooling.
3.3 using a vapor phase cleaning machine to clean, placing the components of the sintered microwave circuit board in a cleaning tank containing ABZO L CEG C L EANER cleaning agent with the temperature of 60 ℃ to be boiled for 20 +/-1 minutes, taking out and placing the components in a culture dish containing 60 ℃ absolute ethyl alcohol to be scrubbed, scrubbing gaps around the circuit board for 5 +/-1 minutes by using a flesh color scrubbing brush, then placing the cleaned components in a drying oven with the temperature of 50 ℃ to be baked for 5 +/-1 minutes, and naturally cooling the components to 22-25 ℃ for later use.
3.4A 4 and A5 are MGFS45V2735 which are fixed on the cavity by screws, and A4 and A5 pins are welded on the circuit board pads by solder wires at 120 ℃.
And 4, step 4: welding and assembling power module circuit board and some components on cavity
Referring to fig. 5, an S-band 100 watt pulse power amplifier power module circuit board assembly diagram operates. U3 is a microwave circuit component; u6 is KFD214 linker; u4 is M2 x 4 round head screw; u5 is M2 x 6 flat head screw; u11 is M4 x 10 round head screw; u13 is M3X 8 flat head screw; u21 is M3 × 8 round head screw; u22 is a M2.5 x 8 round head screw; u23 is a phi 2 elastic flat pad; u24 is a phi 4 elastic flat pad; u25 is a phi 3 elastic flat pad; u26 is a phi 2.5 resilient flat pad.
4.1 fixing the 2.3 cleaned power module circuit board on the cavity by using screws, fixing U1 and U2 MIC29302BT on the cavity, and soldering the U1 and U2 pins on circuit board pads by using solder wires at 120 ℃.
4.2 welding W1, W3 using phi 0.3mm high temperature wire, W2 using phi 0.5 wire, W4, W5 using phi 1 wire, W6 using phi 0.3 copper wire, W7 using phi 1.5 wire, using 120 deg.C soldering wire.
4.3U 9 for N-50KFD1.5 and U6 for SMA-KFD214 connector were screwed into the cavity and the pins were soldered to the circuit board pads with 120 deg.C solder wires. W1, W2, W3, W4, W5, W6 and W7 are all bonding pads on the circuit board which need to be connected by separate leads.
And 5: debugging, testing, closing cap and marking are carried out to the subassembly that the assembly is accomplished:
and after the peripheral circuit and the instrument and meter are connected, debugging and testing can be carried out on the assembled assembly, and after the debugging and testing are finished, the assembly is sealed and marked.
Thus, the S-band 100-watt pulse power amplifier is manufactured.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (2)
1. A manufacturing method of an S-band 100-watt pulse power amplifier is characterized by comprising the following steps: the method specifically comprises the following steps:
the method comprises the following steps: sintering S-band 100W pulse power amplifier microwave module circuit board components;
the first step comprises the following steps:
1.1 respectively placing a cavity of an S-waveband 100-watt pulse power amplifier, a microwave module circuit board and a power module circuit board in a culture dish filled with 60 ℃ absolute ethyl alcohol, scrubbing, cleaning, then placing the cavity, the microwave module circuit board and the power module circuit board in a 50 ℃ oven for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃;
1.2, opening a dispenser and adopting a continuous dispensing mode, setting the pressure of the dispenser to be 45-60psi, dispensing a proper amount of soldering paste with a melting point of 217 ℃ and a component of A L PHA OM338 at a pad of a circuit board of the microwave module, slightly clamping the components by using tweezers, and correctly placing the components at the pad of the circuit board of the microwave module, which is coated with the soldering paste;
1.3, setting the temperature of a heating platform to be 250 +/-5 ℃, and placing the 1.2 component to be sintered on the heating platform at 250 +/-5 ℃ for sintering; observing under a microscope, and correcting by using tweezers if the components shift and warp in the sintering process; after sintering, placing the sintered component on filter paper for natural cooling;
1.4 cleaning the assembly cooled by 1.1 by using a vapor phase cleaning machine, placing a microwave module circuit board of the sintered component in a cleaning tank filled with an ABZO L CEG C L EANER cleaning agent at 60 ℃ for hot boiling for 20 +/-1 minutes, taking out the circuit board and placing the circuit board in a culture dish filled with absolute ethyl alcohol at 60 ℃ for scrubbing, placing the cleaned assembly in a drying oven at 50 ℃ for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃ for later use;
step two: sintering components of a circuit board of a power supply module of the S-band 100-watt pulse power amplifier;
the second step comprises the following steps:
2.1, opening a dispenser and adopting a continuous dispensing mode, setting the pressure of the dispenser to be 45-60psi, dispensing and coating a proper amount of soldering paste with a melting point of 217 ℃ and a component of A L PHA OM338 at the bonding pad of the power module circuit board cleaned at 1.1, clamping the component by using tweezers, and correctly placing the component at the bonding pad of the power module circuit board coated with the soldering paste;
2.2 setting the temperature of the heating platform to be 250 +/-5 ℃, and placing the 2.1 component to be sintered on the heating platform at 250 +/-5 ℃ for sintering; observing under a microscope, and correcting by using tweezers if the components shift and warp in the sintering process; after sintering, placing the sintered component on filter paper for natural cooling;
2.3 cleaning the assembly cooled in 2.2 by using a vapor phase cleaning machine, placing a power module circuit board of the sintered component in a cleaning tank filled with an ABZO L CEG C L EANER cleaning agent at 60 ℃ for hot boiling for 20 +/-1 minutes, taking out the component and placing the component in a culture dish filled with absolute ethyl alcohol at 60 ℃ for scrubbing, placing the cleaned component in an oven at 50 ℃ for baking for 5 +/-1 minute, and naturally cooling to 22-25 ℃ for later use;
step three: sintering and assembling the microwave module circuit board and the components on the cavity;
the third step comprises the following steps:
3.1 printing SN63CR32 solder paste with the melting point of 183 ℃ on the back surface of the microwave module circuit board cleaned by 1.4; and the circuit board is correctly arranged on the cavity;
3.2 setting the temperature of the heating platform to be 190 +/-5 ℃, placing the 3.1 component with the microwave circuit board on the heating platform for sintering, observing under a microscope, and correcting the circuit board by using tweezers in time if the circuit board deviates in the sintering process to ensure that the welding process is accurate and correct; when the soldering tin is melted, a proper amount of rosin water is added by an injector to improve the penetration rate; after welding, taking the welded assembly off the heating platform, and placing the assembly on filter paper for natural cooling;
3.3 cleaning by using a vapor phase cleaning machine, placing the components of the sintered microwave circuit board in a cleaning tank containing ABZO L CEG C L EANER cleaning agent with the temperature of 60 ℃ for hot boiling for 20 +/-1 minutes, taking out and placing in a culture dish containing 60 ℃ absolute ethyl alcohol for scrubbing, and scrubbing gaps around the circuit board for 5 +/-1 minutes, then placing the cleaned components in a 50 ℃ oven for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃ for later use;
3.4 fixing the amplifier on the cavity by using screws, and welding the amplifier pins on the circuit board bonding pads by using soldering wires at 120 ℃;
step four: assembling a power module circuit board and components on the cavity in a welding manner;
the fourth step comprises the following steps:
4.1 fixing the power module circuit board cleaned by 2.3 on the cavity by using screws, fixing the voltage regulating module on the cavity, and welding pins of the voltage regulating module on circuit board pads by using solder wires at 120 ℃;
4.2 welding a welding spot W1, a welding spot W3 uses a high-temperature lead with phi of 0.3mm, a welding spot W2 uses a lead with phi of 0.5mm, a welding spot W4, a welding spot W5 uses a lead with phi of 1mm, a welding spot W6 uses a copper wire with phi of 0.3mm, a welding spot W7 uses a lead with phi of 1.5mm and a soldering tin wire with 120 ℃;
4.3 fixing the radio frequency connector joint and the microstrip connector joint on the cavity by using screws, and welding the pins on the circuit board bonding pads by using soldering wires at 120 ℃;
step five: and debugging, testing, capping and marking the assembled component.
2. The method of claim 1 for manufacturing an S-band 100 w pulse power amplifier, wherein: the fifth step comprises the following steps: after the peripheral circuit and the instrument are connected, the assembled component can be debugged and tested, and after the debugging and the testing are completed, the cover is closed and the mark is marked.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100947943B1 (en) * | 2001-02-06 | 2010-03-15 | 가부시키가이샤 히타치세이사쿠쇼 | High frequency power amplifier module |
| CN106341125A (en) * | 2016-08-30 | 2017-01-18 | 安徽华东光电技术研究所 | Coaxial medium oscillation source processing method |
| CN205945654U (en) * | 2016-08-29 | 2017-02-08 | 成都川美新技术股份有限公司 | C wave band pulse power amplifier |
| CN106455356A (en) * | 2016-08-24 | 2017-02-22 | 安徽华东光电技术研究所 | Manufacturing and processing method of solid microwave source |
| CN106535497A (en) * | 2016-11-04 | 2017-03-22 | 安徽华东光电产业研究院有限公司 | T/R receiving front-end module processing method |
| CN106658983A (en) * | 2016-12-23 | 2017-05-10 | 安徽华东光电技术研究所 | Manufacturing process of L-band 4-watt high-gain broadband power amplifier |
| CN106714471A (en) * | 2016-12-23 | 2017-05-24 | 安徽华东光电技术研究所 | Manufacturing process of S-band pulse 3-watt amplifier |
-
2017
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100947943B1 (en) * | 2001-02-06 | 2010-03-15 | 가부시키가이샤 히타치세이사쿠쇼 | High frequency power amplifier module |
| CN106455356A (en) * | 2016-08-24 | 2017-02-22 | 安徽华东光电技术研究所 | Manufacturing and processing method of solid microwave source |
| CN205945654U (en) * | 2016-08-29 | 2017-02-08 | 成都川美新技术股份有限公司 | C wave band pulse power amplifier |
| CN106341125A (en) * | 2016-08-30 | 2017-01-18 | 安徽华东光电技术研究所 | Coaxial medium oscillation source processing method |
| CN106535497A (en) * | 2016-11-04 | 2017-03-22 | 安徽华东光电产业研究院有限公司 | T/R receiving front-end module processing method |
| CN106658983A (en) * | 2016-12-23 | 2017-05-10 | 安徽华东光电技术研究所 | Manufacturing process of L-band 4-watt high-gain broadband power amplifier |
| CN106714471A (en) * | 2016-12-23 | 2017-05-24 | 安徽华东光电技术研究所 | Manufacturing process of S-band pulse 3-watt amplifier |
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