CN108110617A - It is a kind of that the method for making films on cavity surfaces of semiconductor lasers structure is mutually spread based on dual element - Google Patents
It is a kind of that the method for making films on cavity surfaces of semiconductor lasers structure is mutually spread based on dual element Download PDFInfo
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- CN108110617A CN108110617A CN201711499934.4A CN201711499934A CN108110617A CN 108110617 A CN108110617 A CN 108110617A CN 201711499934 A CN201711499934 A CN 201711499934A CN 108110617 A CN108110617 A CN 108110617A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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Abstract
The present invention proposes a kind of method for mutually being spread based on dual element and making films on cavity surfaces of semiconductor lasers structure.This method is according to the different diffusion mechanisms of each atom in semiconductor laser, a floor P type dopant diffusion sources are grown in laser gain area, and on non-laser gain region, such as two side of Cavity surface or laser waveguide section, one layer of N type dopant diffusion source is grown, so passes through diffusion annealing, on the one hand in gain region due to the relative diffusion of P types foreign atom and N type foreign atoms, the defects of alunite for generating hole and interstitial atom is gone out combinations, effectively prevents the disordering of active layer, reduction active layer；On the other hand, in non-gain region N types foreign atom phase counterdiffusion up and down, the disordering of matrix atom is greatly strengthened, the active layer at Cavity surface is made to disappear and becomes non-absorbent layer；Furthermore at the similar positive-negative-positive interface that P types are generated with N types diffusion source junction, effectively carrier can be prevented to be moved to Cavity surface, so as to greatly improve laser control Cavity surface catastrophic optical damage lesion capability.
Description
Technical field
The present invention relates to semiconductor laser chip Manufacturing Techniques fields, and in particular to one kind is mutual based on dual element
The method that diffusion makes films on cavity surfaces of semiconductor lasers structure.
Background technology
Semiconductor laser requirement Laser output power that the fields such as industrial processes, medical and beauty treatment, national defense safety use is high,
Service life is long.And influence the catastrophic optical damage damage that one of the principal element in power and service life is films on cavity surfaces of semiconductor lasers
(catastrophic optical mirror damage, COMD).Document " Lattice disorder, facet heating
And catastrophic optical mirror damage of AlGaAs quantum well lasers,
P.W.Epperlein, P.Buchmann, and A.Jakubowicz, Appl.Phys.Lett., Vol.62, No.5,1993,
The lattice defect that 455-457 " analyzes at Cavity surface easily becomes carrier (electronics and hole) non-radiative recombination point, causes luminous energy
The rise so as to cause Cavity surface local temperature is absorbed, COMD is just generated when temperature is higher than the molten point of material.So reduce Cavity surface
The lattice defect quantity at place reduces carrier by the concentration of Cavity surface and to avoid the absorption of luminous energy at Cavity surface be to improve semiconductor to swash
The key of light device control COMD abilities.Reach above three purpose, usually require that while using multiple technologies, as Cavity surface vacuum is blunt
Change, ion implanting, non-absorbing window etc., add technology difficulty, and production cost also accordingly improves.Therefore new fit is developed
It has broad application prospects together in the simple and effective method for improving the damage of semiconductor laser control Cavity surface catastrophic optical damage.
The crystal structure of semiconductor laser be typically on the basis of substrate growth have epitaxial layer, this epitaxial layer is according to mixing
Miscellaneous difference can be divided into three layers, and upper strata is P-type doped layer, and interlayer is the N-type doping undoped with active layer and lower floor
Layer.This crystal structure is included there are many atom, such as GaAs base semiconductor lasers, contains matrix atom A l, Ga, In, As and miscellaneous
Matter atom Si, Se, Te (N-type impurity) and C, B, Zn (P-type impurity).The diffusion of atom is generally by crystal in crystal
Hole or interstitial site are realized.If N-type adulterates Si atoms, the position of matrix atom Ga is usually located at, it is by crystal
Hole on middle Ga positions is spread to match, and P-type doping Zn atoms are the interstitial sites positioned at crystal, it is to pass through dependence
Displacement with matrix Ga atoms is diffused.Diffusion for matrix atom also because of the difference of doping, shows different machines
Reason, the matrix atoms permeating of P-type doping are carried out by the displacement of interstitial site, and the matrix atoms permeating of N-type doping is logical
The hole pairs for crossing crystal are diffused, people be exactly using this mechanism come realize impurity Si or impurity Zn induction Quantum Well without
Sequence, so as to improve semiconductor laser control Cavity surface catastrophic optical damage lesion capability.
The content of the invention
The present invention is based on above-mentioned existing films on cavity surfaces of semiconductor lasers to have the expansion of various atoms in COMD and semiconductor
It is different to dissipate mechanism, using be combineding with each other in diffusion process there are hole and interstitial atom defect alunite is caused to be gone out phenomenon, proposed a kind of
The forming method of new films on cavity surfaces of semiconductor lasers structure.This method employs brand-new double foreign atoms diffusion source design,
The one of which atom of this pair of foreign atom is the P-type foreign atom spread by interstitial atom displacement, and another kind is to rely on
Hole to come the N-type foreign atom that spreads, this two kinds of diffusion sources are alternately distributed on the surface of semiconductor laser device epitaxial wafer, by
P-type foreign atom in former semiconductor laser device epitaxial wafer is not easy to spread, therefore in the diffusion process of semiconductor laser
In, the P-type diffusion source on surface is spread downwards, while the N-type doping of semiconductor in itself diffuses up, they are near active layer
It meets, generates hole and go out with interstitial atom alunite, on the one hand reduce hole and the dislocation defects of active layer, while also prevented
The disordering of matrix atom in active layer.On the other hand, the N-type diffusion source on surface is spread downwards, in addition the N-type of semiconductor in itself
Doping diffuses up, and enhances the disordering of active layer, and active layer herein is made to become non-absorbent layer.In another aspect, in P-
Type spreads the junction in source and N-type diffusion source, since the concentration in diffusion source is different, P-type foreign atom and N-type foreign atom
Diffusion coefficient it is different, it is possible to form the interface of similar positive-negative-positive, can play limiting carrier interface by work
With.So when from close to interface N-type diffusion source one side cleavage, the laser cavity surface formed, just there are three the spies of aspect for tool
Point, first, active layer hole and dislocation defects are few, second is that disordering enhancing generates non-absorbing window at Cavity surface, three are proximate to Cavity surface
There is the interface of similar positive-negative-positive in region, limits carrier and passes through from Cavity surface.These three features are complete by one step of double diffusion source structure
Into effectively improving semiconductor laser control Cavity surface catastrophic optical damage lesion capability, and reduce the system of semiconductor laser chip
Make cost.
The present invention solves above-mentioned technical problem and is adopted the technical scheme that：It is a kind of that making half is mutually spread based on dual element
The method of conductor laser Cavity surface structure, is as follows：
1) MOCVD (Metal Organic Chemical Vapor Deposition) technology growth is used in semiconductor laser device epitaxial wafer
The InGaAs layers of one layer of P-type doping spread source, thickness as P-type foreign atomThen PECVD is used thereon
(plasma reinforced chemical vapour deposition) technology growth layer of sin x is as diffusion impervious layer, thickness
2) SiNx layer is removed with RIE etchings or chemical attack in the place of the non-gain region of laser using photolithography method, connect
It and removes InGaAs layers with chemical attack again, expose former semiconductor laser device epitaxial wafer layer.
3) the Si layers that the epitaxial wafer after photoetching corrosion mixes As after thoroughly cleaning using one layer of MOCVD technology growths are made
For the diffusion source of N-type foreign atom, thicknessLayer of sin x diffusing protections are grown using PECVD technique again thereon
Layer, thickness
4) under N2 protections, semiconductor laser device epitaxial wafer of the surface with double diffusion source is diffused using diffusion furnace
Annealing, 750-850 DEG C of diffusion temperature, when diffusion time 8-15 is small.
5) semiconductor laser device epitaxial wafer after having spread removes SiNx layer and Si layers using RIE or chemical attack, then uses
Chemical attack removes InGaAs layers.Hereafter, the semiconductor laser device epitaxial wafer after DIFFUSION TREATMENT can carry out other laser cores
The subsequent manufacturing processes of piece.
6) following technique effect can at least be reached by technical scheme：Due to using with different diffusion machines
The P-type of reason and the method for diffusion in N-type double diffusion source, it is on the one hand former by P-type foreign atom and N- impurity in laser gain area
Sub- relative diffusion, the alunite for generating hole and interstitial atom are gone out combinations, effectively prevent the disordering of active layer, meanwhile, reduction
The defects of active layer concentration, ensure that the luminous efficiency and spectral characteristic of active layer；On the other hand, in the non-gain of laser
Area, at laser cavity surface, the phase counterdiffusion up and down of N-type foreign atom greatly strengthens the disordering of matrix atom, makes Cavity surface
The active layer disappearance at place becomes non-absorbent layer, meanwhile, with the disappearance of Cavity surface active layer, the wave guiding effect at Cavity surface also disappears
It losing so that light extraction speck area increases at Cavity surface, so, while laser control Cavity surface catastrophic optical damage lesion capability is improved,
The near field mode of laser is not had an impact again；Furthermore P-type spreads the phase counterdiffusion production of source and N-type diffusion source junction
The interface of raw similar positive-negative-positive, effectively can prevent carrier from being moved to Cavity surface, that is, improves the light extraction efficiency of laser, and reduce
Non-radiative recombination of the carrier at Cavity surface, can also further improve laser control Cavity surface catastrophic optical damage lesion capability.This
Outside, this method will not increase semiconductor laser chip and make any additional equipment investment, and can guarantee semiconductor core
Piece makes quick, simplicity, therefore has a vast market popularizing application prospect.
The present invention is further described below in conjunction with the accompanying drawings.
Description of the drawings
Attached drawing 1 is the Cavity surface structure diagram for the semiconductor laser for spreading source with dual element using the present invention.
Attached drawing 2 is that the diffusion of the films on cavity surfaces of semiconductor lasers structural section after being spread using the method for the present invention shows knot SEM photographs
Piece.
The meaning of each reference numeral is as follows in figure：
1- semiconductor laser device epitaxial wafers, 2- semiconductor laser substrates, 3-N- type doped epitaxial layers, 4- non-impurity-dopeds are active
Layer, 5-P- type doped epitaxial layers, 6-P- type diffusion source layers, 7- diffusion impervious layers, 8-N- type diffusion source layers, 9- diffusion barriers,
10-P- types spread interface, 11- laser gains area, the non-gain region of 12- laser with N-type.
Specific embodiment
Illustrate that a kind of mutually spread based on dual element proposed by the present invention makes films on cavity surfaces of semiconductor lasers knot with reference to attached drawing 1
The method of structure.The present invention makes the structure of the epitaxial wafer 1 of semiconductor laser from below to up by substrate 2, N-type doped epitaxial layer
3, undoped active layer 4 and P-type doped epitaxial layer 5 form.N-type foreign atom is usually Si or Se or Te, preferably Se；P-
Type foreign atom has C or B or Zn, is preferably not easy the atom of diffusion, such as C；The active layer to undope is usually Quantum Well
InGaAs or AlGaAs, preferably InGaAs.Growth has thickness above the laser gain area of laser epitaxial piece center sectionP-type dopant diffusion source layer 6, preferablyThe InGaAs for mixing Zn layers；In two side of laser epitaxial piece
Non- gain region above, such as the region at two end of Cavity surface, growth has thicknessN-type dopant diffusion source layer 8, preferablyThe Si for mixing As layers；P-type diffusion source layer 6 and N- diffusion source layers 8 are by thicknessDiffusion impervious layer
7 keep apart, preferablySiNx layer；Finally a layer thickness is grown on all grown layersExpansion
Protective layer 9 is dissipated, preferablySiNx layer.
The present invention is specific real using a kind of method for mutually being spread based on dual element and making films on cavity surfaces of semiconductor lasers structure
It is as follows to apply step：
Step 1, using MOCVD methods on the P-type epitaxial layer 5 of laser epitaxial piece 1 growth thicknessMix
The InGaAs layers of Zn, as P-type diffusion source layer 6, concentration ＞=5x10 of wherein Zn19/cm3；
Step 2, using PECVD methods above P-type diffusion source layer 6 growth thicknessSiNx layer, make
For diffusion impervious layer 7；
Step 3, using the method for photoetching in the non-gain region of laser, such as the 10-30 um regions at two end of laser cavity surface,
Diffusion impervious layer SiNx is removed using RIE or chemical corrosion method first, the wherein chemical corrosion liquid of SiNx can be BOE or HF water
Solution；Then P-type diffusion source layer InGaAs is removed using chemical corrosion method, the wherein chemical corrosion liquid of InGaAs can be lemon
The aqueous solution of lemon acid and hydrogen peroxide；
Step 4, using MOCVD methods in extension on piece growth thicknessThe Si for mixing As layers, as N-type expand
Dissipate active layer 8, concentration ＞=2x10 of wherein As20/cm3；
Step 5, the SiNx layer using PECVD methods growth thickness 1000-1200A above N-type diffusion source layer 8 are made
For diffusion barrier 9；
Step 6, in inert gas, as N2 gas protection under, the epitaxial wafer with dual element diffusion source is put into diffusion furnace
In be diffused annealing, diffusion conditions is 750-850 DEG C, when time 10-15 is small, preferably 800 DEG C, when 11-12 is small；
Diffusion barrier 9, N-type diffusion source layer 8 and the diffusion impervious layer 7 on epitaxial wafer surface after step 7, diffusion is adopted
It is removed with chemical corrosion method, such as BOE or HF aqueous solutions；P-type diffusion source layer 6 above epitaxial wafer uses citric acid and hydrogen peroxide
Aqueous solution removal；
Step 8, the epitaxial wafer after surface is removed can carry out conventional chip of laser and make subsequent technique.
PL spectrums (photoluminescence spectra) are carried out to the laser epitaxial piece after diffusion to analyze, it was demonstrated that swash in intermediate gain region
Wavelength blue shift is penetrated less than 30nm, and the excitation wavelength blue shift in two end Cavity surface regions is more than 100nm, and the two peak height differs
2 times or more.Electronic Speculum fabric analysis (Fig. 2) is scanned to diffusion cross section simultaneously, it can be seen that using the present invention is based on dual elements
The method that mutually diffusion makes films on cavity surfaces of semiconductor lasers structure, the handing-over in double diffusion source are formed with similar positive-negative-positive everywhere
Interface 10.
In practical applications, it is of the invention based on the mutual method of diffusion of dual element, it can not only make semiconductor laser
Cavity surface structure, and the waveguiding structure of semiconductor laser can also be made.These conversion belong to the protection model of the present invention
Farmland.
Claims (5)
1. a kind of mutually spread the method for making films on cavity surfaces of semiconductor lasers structure based on dual element, which is characterized in that in laser
Growth has P-type dopant diffusion source floor 6 in the laser gain area 11 of 1 center section of device epitaxial wafer, at two end of laser epitaxial piece
On non-laser gain region 12, such as two side of Cavity surface or laser waveguide area, growth has N-type dopant diffusion source layer 8, P-type diffusion source
Kept apart between N- diffusions source by diffusion impervious layer 7, finally growth has diffusion barrier 9 on all grown layers.
2. a kind of side that making films on cavity surfaces of semiconductor lasers structure is mutually spread based on dual element according to claim 1
Method, which is characterized in that the structure of the epitaxial wafer 1 is from below to up by substrate 2, N-type doped epitaxial layer 3, undoped active layer
4 and P-type doped epitaxial layer 5 form；N-type foreign atom is usually Si or Se or Te, preferably Se；P-type foreign atom has C or B
Or Zn, preferably it is not easy the atom spread, such as C；The active layer to undope is usually Quantum Well InGaAs or AlGaAs.
3. a kind of side that making films on cavity surfaces of semiconductor lasers structure is mutually spread based on dual element according to claim 1
Method, which is characterized in that the P-type dopant diffusion source layer 6 is thicknessThe InGaAs for mixing Zn or B layers；The N-
Type dopant diffusion source layer 8 is thicknessMix the Si layers of As；The diffusion impervious layer 7 is thicknessSiNx
Layer；The last diffusion barrier 9 is thicknessSiNx layer.
4. a kind of side that making films on cavity surfaces of semiconductor lasers structure is mutually spread based on dual element according to claim 1
Method, which is characterized in that the laser gain area 11 generates stimulated radiation region for carrier；The non-gain region 12 of laser includes
The end face at two end of semiconductor laser, two side regions of semiconductor laser waveguide section etc., this area are not required carrier to pass through.
5. a kind of side that making films on cavity surfaces of semiconductor lasers structure is mutually spread based on dual element according to claim 1
Method, which is characterized in that including following specific implementation step：
Step 1 grows P-type diffusion source layer 6 using MOCVD methods on the P-type epitaxial layer 5 of laser epitaxial piece 1；
Step 2 grows diffusion impervious layer 7 using PECVD methods above P-type diffusion source layer 6；
Step 3, using the method for photoetching in the non-gain region of laser, such as two end of Cavity surface, gone using RIE or chemical corrosion method
Fall diffusion impervious layer 7 and P-type diffusion source layer 6；
Step 4 grows N-type diffusion source layer 8 using MOCVD methods；
Step 5 grows diffusion barrier 9 using PECVD methods；
Step 6, in inert gas, as N2 gas protection under, the epitaxial wafer with dual element diffusion source be put into diffusion furnace into
Row diffusion annealing；
Diffusion barrier 9, N-type diffusion source layer 8, diffusion impervious layer 7 and the P-type on epitaxial wafer surface after step 7, diffusion expands
Active layer 6 is dissipated to remove using chemical corrosion method.
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| CN111463653A (en) * | 2020-04-21 | 2020-07-28 | 四川大学 | Semiconductor laser and preparation method thereof |
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| CN111463653A (en) * | 2020-04-21 | 2020-07-28 | 四川大学 | Semiconductor laser and preparation method thereof |
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