CN108110097A - GaN base LED component and preparation method thereof - Google Patents
GaN base LED component and preparation method thereof Download PDFInfo
- Publication number
- CN108110097A CN108110097A CN201810034773.XA CN201810034773A CN108110097A CN 108110097 A CN108110097 A CN 108110097A CN 201810034773 A CN201810034773 A CN 201810034773A CN 108110097 A CN108110097 A CN 108110097A
- Authority
- CN
- China
- Prior art keywords
- layer
- gan
- thickness
- algan
- base led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910002601 GaN Inorganic materials 0.000 claims description 69
- 229910002704 AlGaN Inorganic materials 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000012010 growth Effects 0.000 description 11
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
A kind of GaN base LED component, including：One substrate；One nucleating layer makes on substrate；One undoped GaN layer, is produced on nucleating layer；One n-layer is produced in undoped GaN layer；One luminescent layer, is produced in n-layer；One p-type layer makes on the light-emitting layer.The present invention has the advantages of preparation time is short, of low cost, can prepare on a large scale, improve epitaxial material quality and device performance.
Description
Technical field
This disclosure relates to technical field of semiconductors, more particularly to a kind of GaN base LED component and preparation method thereof.
Background technology
GaN base LED has many advantages, such as economize on electricity, environmentally friendly, small, has become the mainstream of general illumination field at present.
Due to lacking the cheap foreign substrates such as inexpensive homogeneity GaN substrate, GaN base LED generally uses sapphire, silicon substrate,
And generally use MOCVD technologies carry out the hetero-epitaxy production of GaN base LED epitaxial structure.The GaN base for long high quality of making a living
LED epitaxial materials need first MOCVD low-temperature epitaxies GaN or AlN nucleating layers on substrate material, for alleviating foreign substrate and GaN
Then the lattice mismatch and thermal mismatching of material use MOCVD technology growth GaN base LED epitaxy junctions on GaN or AlN nucleating layers
Structure.In the recent period, relevant report proves [Improved output power of GaN-based ultraviolet light-
Emitting diodes with sputtered AlN nucleation layer, Journal ofCrystalGrowth,
414,258-262,2015], using the AlN of magnetron sputtering as nucleating layer, then preparing GaN base LED using MOCVD technologies can
Improve hetero epitaxial materials quality, improve LED luminous efficiencies, and greatly promote antistatic breakdown (ESD) ability of LED, therefore,
The nucleating layer for being GaN base LED using the AlN of magnetron sputtering at present obtains extensive concern, and has put into mass production.
As the significant challenge that GaN base LED epitaxially deposited layers face it is AlN nucleating layers using magnetron sputtering An nucleating layers
Crystal quality is not high enough, and X-ray diffraction XRD (10-12) crystal face of especially AlN nucleating layers is second-rate, follow-up so as to reduce
The GaN base epitaxial material quality of MOCVD growths, causes the reduction of LED luminous efficiencies.Recently, by studying it was found that in nitrogen
1200-2300 DEG C of high-temperature thermal annealing under gas atmosphere, the AlN films of magnetron sputtering can recrystallize, so as to substantially improve magnetic
The crystal quality of control sputtering AlN materials, Fig. 1 and Fig. 2 be respectively before and after annealing the XRD (0002) of magnetron sputtering AlN films and
(10-12) face rocking curve, it can be seen that the halfwidth in (0002) and (10-12) face of AlN films is great after high annealing
Reduce, show increasing substantially for AlN films (0002) and (10-12) faceted crystal quality.The present invention intends for magnetron sputtering AlN
The problem of nucleating layer crystal quality difference improves the crystal matter of AlN nucleating layers using 1200-2300 DEG C of high annealing under nitrogen atmosphere
Amount further improves the crystal quality of follow-up MOCVD growths GaN base LED epitaxial layers, promotes the luminous efficiency of GaN base LED.
The content of the invention
In view of above-mentioned technical problem, present disclose provides a kind of GaN base LED component and preparation method thereof, have when preparing
Between it is short, it is of low cost the advantages of, can prepare on a large scale, improve epitaxial material quality and device performance.
The present invention provides a kind of GaN base LED component, including：
One substrate；
One nucleating layer makes on substrate；
One undoped GaN layer, is produced on nucleating layer；
One n-layer is produced in undoped GaN layer；
One luminescent layer, is produced in n-layer；
One p-type layer makes on the light-emitting layer.
The present invention also provides a kind of preparation methods of GaN base LED component, include the following steps：
Step 1：Nucleating layer is prepared on a substrate；
Step 2：Annealing；
Step 3：Non-doped layer is prepared on nucleating layer；
Step 4：N-layer is prepared on non-doped layer；
Step 5：Luminescent layer is prepared in n-layer；
Step 6：P-type layer is prepared on the light-emitting layer.
It can be seen from the above technical proposal that the invention has the advantages that：
1. the present invention improves GaN base LED by using the quality of high annealing skill upgrading magnetron sputtering AlN nucleating layers
Epitaxial material quality, and then improve the luminous efficiency of GaN base LED.
2. the preparation method of GaN base LED proposed by the present invention has the characteristics that the time is short, of low cost, it is suitable for advising greatly
Mould industrialization production.
Description of the drawings
Purpose, technical scheme and advantage to make the disclosure are more clearly understood, and with reference to embodiments and attached drawing is detailed
Illustrate as after, wherein：
Fig. 1 is the diagrammatic cross-section of structure of the present invention；
Fig. 2 is preparation method flow diagram of the present invention；
Fig. 3 is according to XRD (0002) and (10-12) face rocking curve before and after the annealing of AlN of embodiment of the present invention nucleating layers.
Specific embodiment
It should be noted that in attached drawing or specification description, similar or identical part all uses identical figure number.It is attached
The realization method for not illustrating or describing in figure is form known to a person of ordinary skill in the art in technical field.In addition, though this
Text can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is worth accordingly without being definitely equal to, but can connect
The error margin received is similar to be worth accordingly in design constraint.The direction term mentioned in embodiment, such as " on ", " under ",
"front", "rear", "left", "right" etc. are only the directions of refer to the attached drawing, are not used for limiting the protection domain of the disclosure.
Refering to Figure 1, the present invention provides a kind of GaN base LED component, including：
One substrate 10, the material of the substrate 10 is sapphire, carborundum, gallium nitride, gallium oxide, zinc oxide, magnesia,
Silicon, glass or metal；
One nucleating layer 20 makes over the substrate 10, and the material of the nucleating layer 20 is AlN, and thickness is 1nm-500 μm；
One non-doped layer 30, is produced on nucleating layer 20；
One n-layer 40, is produced on non-doped layer 30；
One luminescent layer 50, is produced in n-layer 40；
One p-type layer 60, is produced on luminescent layer 50.
The material of wherein described non-doped layer 30 is GaN, AlGaN or AlN, and thickness is 0-1 μm；The material of the n-layer 40
Expect for GaN or AlGaN, thickness is 0-1 μm；The luminescent layer 50 is single quantum well or multiple quantum wells, material for InGaN/GaN or
AlGaN/AlGaN or GaN/AlGaN, cycle 1-20, wherein, the thickness of trap is 2-10nm, the thickness 2-15nm at base；The p
The material of type layer 60 is GaN or AlGaN, and thickness is 0-1 μm.
Referring to Fig. 2, and combination as shown in fig.1, the present invention provides a kind of preparation method of GaN base LED component, including
Following steps：
Step 1：Nucleating layer 20 is prepared on a substrate 10, the material of the substrate 10 is sapphire, carborundum, nitridation
Gallium, gallium oxide, zinc oxide, magnesia, silicon, glass or metal；The material of the nucleating layer 20 is AlN, and thickness is 1nm-500 μ
m；
Step 2：Annealing, the temperature of the annealing are 1200-2300 DEG C, and protective gas during annealing is nitrogen, argon gas, helium
Gas or ammonia, or more various gases mixed gas；
Step 3：Prepare non-doped layer 30 on nucleating layer 20, the material of the non-doped layer 30 for GaN, AlGaN or
AlN, thickness are 0-1 μm；
Step 4：N-layer 40 is prepared on non-doped layer 30, the material of the n-layer 40 is GaN or AlGaN, and thickness is
0-1μm；
Step 5：Luminescent layer 50 is prepared in n-layer 40, the luminescent layer 50 is single quantum well or multiple quantum wells, and material is
InGaN/GaN or AlGaN/AlGaN or GaN/AlGaN, cycle 1-20, wherein, the thickness of trap is 2-10nm, the thickness 2- at base
15nm；
Step 6：P-type layer 60 is prepared on luminescent layer 50, the material of the p-type layer 60 is GaN or AlGaN, thickness 0-1
μm。
More specifically, in the step 1, the substrate 10 can be conventional plane substrate, or figure serves as a contrast
Bottom.The nucleating layer 20 is prepared using magnetron sputtering technique, and boundary is heterogeneous for alleviating between the substrate and non-doped layer
Lattice mismatch and thermal mismatching between substrate and non-doped layer, to promote the growth of follow-up non-doped layer.In addition, 10 He of substrate
Other buffer layer structures of lattice and thermally matched degree can also be improved between the AlN nucleating layers 20.
In the step 2, anneal to promote the crystal quality of AlN nucleating layers.As shown in figure 3, in high-temperature thermal annealing
After processing, AlN nucleating layer crystal quality has obtained larger raising.
In the step 3, by taking undoped GaN layer as an example, the non-doped layer 30, can be with using the growth of MOCVD techniques
Using hydrogen or nitrogen as carrier gas, TMGa and NH3Respectively as Ga sources and N sources, growth temperature is 600-1100 DEG C, thickness 0-1 μ
m。
In the step 4, by taking n-type GaN layer as an example, the n-layer 40, can be with hydrogen using the growth of MOCVD techniques
Or nitrogen is as carrier gas, TMGa and NH3Respectively as Ga sources and N sources, silane is n-type dopant, growth temperature 600-1100
DEG C, 0-1 μm of thickness.
In the step 5, by taking InGaN/GaN Quantum Well as an example, the luminescent layer 50, can using the growth of MOCVD techniques
With using hydrogen or nitrogen as carrier gas, TMAl, TMIn and NH3Respectively as Al sources, In sources and N sources, growth temperature 400-1000
DEG C, luminescent layer can be that InGaN/GaN is multiple quantum wells or single quantum well, cycle 1-20, wherein, the thickness of trap is 2-
10nm, the thickness 2-15nm at base.
In the step 6, by taking p-type GaN layer as an example, the p-type layer 60 is using the growth of MOCVD techniques, with hydrogen or nitrogen
Gas is as carrier gas, TMGa and NH3Respectively as Ga sources and N sources, two luxuriant magnesium are p-type dopant, 500-1100 DEG C of temperature, thickness 0-
1μm.The p-type layer can provide the p-type material in hole with selected as luminescent layer, also may be selected comprising electronic barrier layer and p-type nitrogen
Change at least one of gallium contact layer and p-type superlattice layer etc. material.
In addition to GaN base LED, AIN nucleating layers and its annealing preparation method in disclosure preparation method apply also for
Other need the various GaN bases of AlN nucleating layers, AIN bases photoelectricity or electronic device device, such as laser diode (LD), partly lead
Body photodetector (PD), surface acoustic wave and bulk acoustic wave device and high frequency, high temperature, high-power electronic device etc..
Particular embodiments described above has carried out the purpose, technical solution and advantageous effect of the disclosure further in detail
Describe in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, be not limited to the disclosure, it is all
The spirit of the disclosure and any modification, equivalent substitution, improvement and etc. within principle, done, should be included in the protection of the disclosure
Within the scope of.
So far, attached drawing is had been combined the present embodiment is described in detail.According to above description, those skilled in the art
There should be clear understanding to disclosure semiconductor devices and preparation method thereof.
It should be noted that in attached drawing or specification text, the realization method that does not illustrate or describe is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
Various concrete structures, shape or the mode mentioned in embodiment are not limited only to, those of ordinary skill in the art can carry out more it
Change or replace.
It should also be noted that, the demonstration of the parameter comprising particular value can be provided herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
To term, such as " on ", " under ", "front", "rear", "left", "right" etc., only it is the direction of refer to the attached drawing, is not used for limiting this
Disclosed protection domain.
Particular embodiments described above has carried out the purpose, technical solution and advantageous effect of the disclosure further in detail
It describes in detail bright, it should be understood that the foregoing is merely the specific embodiments of the disclosure, is not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (9)
1. a kind of GaN base LED component, including：
One substrate；
One nucleating layer makes on substrate；
One undoped GaN layer, is produced on nucleating layer；
One n-layer is produced in undoped GaN layer；
One luminescent layer, is produced in n-layer；
One p-type layer makes on the light-emitting layer.
2. GaN base LED component according to claim 1, wherein the material of the substrate is sapphire, carborundum, nitridation
Gallium, gallium oxide, zinc oxide, magnesia, silicon, glass or metal.
3. GaN base LED component according to claim 1, wherein the material of the undoped GaN layer for GaN, AlGaN or
AlN, thickness are 0-1 μm；The material of the n-layer is GaN or AlGaN, and thickness is 0-1 μm；The luminescent layer is single quantum well
Or multiple quantum wells, material be InGaN/GaN or AIGaN/AlGaN or GaN/AlGaN, cycle 1-20, wherein, the thickness of trap is
2-10nm, the thickness 2-15nm at base；The material of the p-type layer is GaN or AlGaN, and thickness is 0-1 μm.
4. GaN base LED component according to claim 1, wherein the material of the nucleating layer is AlN, thickness is
1nm-500μm。
5. a kind of preparation method of GaN base LED component, includes the following steps：
Step 1：Nucleating layer is prepared on a substrate；
Step 2：Annealing；
Step 3：Non-doped layer is prepared on nucleating layer；
Step 4：N-layer is prepared on non-doped layer；
Step 5：Luminescent layer is prepared in n-layer；
Step 6：P-type layer is prepared on the light-emitting layer.
6. the preparation method of GaN base LED component according to claim 5, wherein the material of the substrate is sapphire, carbon
SiClx, gallium nitride, gallium oxide, zinc oxide, magnesia, silicon, glass or metal.
7. the preparation method of GaN base LED component according to claim 5, wherein the temperature annealed is 1200-2300 DEG C,
Protective gas during annealing is nitrogen, argon gas, helium or ammonia, or more various gases mixed gas.
8. the preparation method of GaN base LED component according to claim 5, wherein the material of the nucleating layer is AlN, it is thick
It spends for 1nm-500 μm.
9. the preparation method of GaN base LED component according to claim 5, wherein the material of the undoped GaN layer is
GaN, AlGaN or AlN, thickness are 0-1 μm；The material of the n-layer is GaN or AlGaN, and thickness is 0-1 μm；The luminescent layer
For single quantum well or multiple quantum wells, material is InGaN/GaN or AlGaN/AlGaN or GaN/AlGaN, cycle 1-20, wherein,
The thickness of trap is 2-10nm, the thickness 2-15nm at base；The material of the p-type layer is GaN or AlGaN, and thickness is 0-1 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810034773.XA CN108110097A (en) | 2018-01-15 | 2018-01-15 | GaN base LED component and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810034773.XA CN108110097A (en) | 2018-01-15 | 2018-01-15 | GaN base LED component and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108110097A true CN108110097A (en) | 2018-06-01 |
Family
ID=62220063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810034773.XA Pending CN108110097A (en) | 2018-01-15 | 2018-01-15 | GaN base LED component and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108110097A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638126A (en) * | 2018-10-31 | 2019-04-16 | 华灿光电（浙江）有限公司 | A kind of nitridation aluminum alloy pattern plate, deep-UV light-emitting diode epitaxial wafer and preparation method thereof |
| CN109768127A (en) * | 2019-01-23 | 2019-05-17 | 华灿光电（浙江）有限公司 | GaN base light emitting epitaxial wafer and preparation method thereof, light emitting diode |
| CN111710595A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Stress and wafer warping control method for high-quality AlN template |
| CN111816739A (en) * | 2020-08-17 | 2020-10-23 | 西安电子科技大学芜湖研究院 | High-efficiency ultraviolet light-emitting diode based on gallium oxide substrate and preparation method |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1697134A (en) * | 2004-05-14 | 2005-11-16 | 中国科学院物理研究所 | Method for preparing graphical substrate in situ by using SIN film |
| CN1900386A (en) * | 2006-07-05 | 2007-01-24 | 武汉华灿光电有限公司 | Method for epitaxial growing AlxGa1-xN single crystal film on saphire lining bottom material |
| CN102867896A (en) * | 2012-09-26 | 2013-01-09 | 湘能华磊光电股份有限公司 | LED epitaxial structure and preparation method thereof |
| CN104112799A (en) * | 2014-06-26 | 2014-10-22 | 山西飞虹微纳米光电科技有限公司 | Lattice-matched LED epitaxial structure and preparation method thereof |
| CN104319234A (en) * | 2014-10-14 | 2015-01-28 | 北京大学 | Method for growing high-crystal quality AlN epitaxial layer |
| CN104332545A (en) * | 2014-09-02 | 2015-02-04 | 中国科学院半导体研究所 | Low-electrical-resistivity p-type aluminum gallium nitrogen material and preparation method thereof |
| CN105161592A (en) * | 2015-07-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | LED having N type AlInGaN contact layer and preparation method |
| CN105449522A (en) * | 2015-12-28 | 2016-03-30 | 中国科学院半导体研究所 | Green laser epitaxial wafer and preparation method thereof |
| CN207765474U (en) * | 2018-01-15 | 2018-08-24 | 中国科学院半导体研究所 | GaN base LED component |
-
2018
- 2018-01-15 CN CN201810034773.XA patent/CN108110097A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1697134A (en) * | 2004-05-14 | 2005-11-16 | 中国科学院物理研究所 | Method for preparing graphical substrate in situ by using SIN film |
| CN1900386A (en) * | 2006-07-05 | 2007-01-24 | 武汉华灿光电有限公司 | Method for epitaxial growing AlxGa1-xN single crystal film on saphire lining bottom material |
| CN102867896A (en) * | 2012-09-26 | 2013-01-09 | 湘能华磊光电股份有限公司 | LED epitaxial structure and preparation method thereof |
| CN104112799A (en) * | 2014-06-26 | 2014-10-22 | 山西飞虹微纳米光电科技有限公司 | Lattice-matched LED epitaxial structure and preparation method thereof |
| CN104332545A (en) * | 2014-09-02 | 2015-02-04 | 中国科学院半导体研究所 | Low-electrical-resistivity p-type aluminum gallium nitrogen material and preparation method thereof |
| CN104319234A (en) * | 2014-10-14 | 2015-01-28 | 北京大学 | Method for growing high-crystal quality AlN epitaxial layer |
| CN105161592A (en) * | 2015-07-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | LED having N type AlInGaN contact layer and preparation method |
| CN105449522A (en) * | 2015-12-28 | 2016-03-30 | 中国科学院半导体研究所 | Green laser epitaxial wafer and preparation method thereof |
| CN207765474U (en) * | 2018-01-15 | 2018-08-24 | 中国科学院半导体研究所 | GaN base LED component |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638126A (en) * | 2018-10-31 | 2019-04-16 | 华灿光电（浙江）有限公司 | A kind of nitridation aluminum alloy pattern plate, deep-UV light-emitting diode epitaxial wafer and preparation method thereof |
| CN109768127A (en) * | 2019-01-23 | 2019-05-17 | 华灿光电（浙江）有限公司 | GaN base light emitting epitaxial wafer and preparation method thereof, light emitting diode |
| CN111710595A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Stress and wafer warping control method for high-quality AlN template |
| CN111816739A (en) * | 2020-08-17 | 2020-10-23 | 西安电子科技大学芜湖研究院 | High-efficiency ultraviolet light-emitting diode based on gallium oxide substrate and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3812368B2 (en) | Group III nitride compound semiconductor device and method for manufacturing the same | |
| US8563995B2 (en) | Ultraviolet light emitting diode/laser diode with nested superlattice | |
| CN102368519B (en) | A kind of method improving semiconductor diode multiple quantum well light emitting efficiency | |
| JP4189386B2 (en) | Method for growing nitride semiconductor crystal layer and method for producing nitride semiconductor light emitting device | |
| US7871845B2 (en) | Nitride-based semiconductor light emitting device and method of manufacturing the same | |
| RU2523747C2 (en) | Boron-containing iii-nitride light-emitting device | |
| JP4939014B2 (en) | Group III nitride semiconductor light emitting device and method for manufacturing group III nitride semiconductor light emitting device | |
| CN105428482B (en) | A kind of LED epitaxial structure and production method | |
| JP2008205514A (en) | Iii-v nitride semiconductor device | |
| JP2010521059A (en) | Deep ultraviolet light emitting device and method for manufacturing the same | |
| CN108110097A (en) | GaN base LED component and preparation method thereof | |
| KR20070102114A (en) | Nitride semiconductor light-emitting device and manufacturing method thereof | |
| KR100689975B1 (en) | Ternary nitride-based buffer layer of a nitride-based light-emitting device and a method for manufacturing the same | |
| CN104409587A (en) | An InGaN-based blue-green light-emitting diode epitaxial structure and growth method | |
| US20180182916A1 (en) | Group iii nitride semiconductor light-emitting device and production method therefor | |
| JP2004047764A (en) | Method for manufacturing nitride semiconductor, semiconductor wafer and semiconductor device | |
| JP5401145B2 (en) | Method for producing group III nitride laminate | |
| KR20080046743A (en) | Nitride semiconductor device and method for manufacturing same | |
| CN105914270A (en) | Manufacturing method of silicon-based gallium nitride LED epitaxial structure | |
| JPH11135889A (en) | Substrate for crystal growth and light-emitting device using the same | |
| CN114361302A (en) | Light-emitting diode epitaxial wafer, light-emitting diode buffer layer and preparation method thereof | |
| JP3718329B2 (en) | GaN compound semiconductor light emitting device | |
| CN109671816A (en) | A kind of epitaxial wafer of light emitting diode and preparation method thereof | |
| JP2000114599A (en) | Semiconductor light emitting element | |
| CN103137808A (en) | Gallium nitride light-emitting diode (LED) with low-temperature n-type inserted layer and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |