CN108109984A - Semiconductor package and preparation method thereof - Google Patents
Semiconductor package and preparation method thereof Download PDFInfo
- Publication number
- CN108109984A CN108109984A CN201711282034.4A CN201711282034A CN108109984A CN 108109984 A CN108109984 A CN 108109984A CN 201711282034 A CN201711282034 A CN 201711282034A CN 108109984 A CN108109984 A CN 108109984A
- Authority
- CN
- China
- Prior art keywords
- antenna
- substrate
- layer
- semiconductor package
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The present invention provides a kind of semiconductor package and preparation method thereof, and semiconductor package includes：Antenna substrate, including opposite first surface and second surface；Re-wiring layer, on the first surface of antenna substrate；Antenna module, on the second surface of antenna substrate；The poly- ripple arc mirror of high frequency, on the second surface of antenna substrate.In the semiconductor package of the present invention, being used to support the material of the antenna substrate of antenna module can select according to actual needs, select elastic higher, and the loss of antenna signal can be reduced by the selection of antenna substrate；By setting the poly- ripple arc mirror of high frequency in the top of antenna module, the antenna gain of antenna module can be dramatically increased.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of semiconductor package and preparation method thereof.
Background technology
At present, for communication efficiency the considerations of, radio frequency chip can all set antenna, the fan-out-type of radio frequency chip when in use
Wafer-level packaging method is generally：Carrier is provided, adhesive layer is formed in carrier surface；On adhesive layer photoetching, electroplate out again
Wiring layer (Redistribution Layers, RDL)；Radio frequency chip is installed to by re-wiring layer using chip bonding process
On；Using Shooting Technique by chip plastic packaging in capsulation material layer；Antenna is formed on the surface of the capsulation material layer；Removal carries
Body and adhesive layer；Photoetching, plating form Underbump metallization layer (UBM) on re-wiring layer；It carries out planting ball reflux on UBM,
Form soldered ball convex block；Then carry out wafer and stick piece, cutting scribing.From the foregoing, it will be observed that in existing radio frequency chip encapsulating structure, radio frequency
Chip plastic packaging is in capsulation material layer, and antenna can only be made in the surface of capsulation material layer and radio frequency chip is used cooperatively, the envelope
There are the following problems for assembling structure：The material layer contacted with antenna is only the capsulation material layer for radio frequency chip plastic packaging, optional
Selecting property is small, and the loss of antenna signal is larger；The structure of antenna and radio frequency chip is relatively more fixed, convenient using underaction；Antenna
Gain is poor.
The content of the invention
In view of the foregoing deficiencies of prior art, it is an object of the invention to provide a kind of semiconductor package and its
Preparation method is only for solving the material layer in the prior art contacted with antenna for the modeling of radio frequency chip plastic packaging
Closure material layer, alternative small, the loss of antenna signal is larger；The structure of antenna and radio frequency chip is relatively more fixed, using inadequate
Flexibly and easily；The problems such as antenna gain is poor.
In order to achieve the above objects and other related objects, the present invention provides a kind of semiconductor package, the semiconductor
Encapsulating structure includes：
Antenna substrate, the antenna substrate include opposite first surface and second surface；
Re-wiring layer, on the first surface of the antenna substrate；
Antenna module, on the second surface of the antenna substrate；
The poly- ripple arc mirror of high frequency encapsulates plastic packaging on the second surface of the antenna substrate, and by the antenna module, uses
In the antenna gain for increasing the antenna module.
Preferably, the antenna substrate includes：Glass substrate, silicon substrate, 5880 substrates of Roger, high molecular material substrate
Or composite substrate.
Preferably, the re-wiring layer includes：
Insulating layer, positioned at the second surface of the antenna substrate；
At least one layer of metal line layer, in the insulating layer；
Underbump metallization layer, positioned at surface of the insulating layer away from the antenna substrate, and it is electric with the metal line layer
Connection.
Preferably, the antenna module includes at least one antenna element, and the antenna element is patch antenna or spiral
Shape antenna.
Preferably, the antenna module includes multiple antenna elements, and multiple antenna elements are in the antenna base
It is in monolayer distribution on the first surface of plate.
Preferably, the antenna module includes multiple antenna elements, and multiple antenna elements are in the antenna base
If in the distribution of dried earth layer that interval up and down is stacked on the first surface of plate, and it is connected between antenna element described in adjacent two layers.
Preferably, the antenna module further includes dielectric layer, and the dielectric layer is located at least in antenna list described in adjacent two layers
Between member.
Preferably, each layer antenna element includes multiple antenna elements, more in each layer antenna element
A antenna element is along the direction parallel to the antenna substrate first surface in array distribution, annular spread or random
Every arrangement.
Preferably, the poly- ripple arc mirror of the high frequency is convex mirror.
Preferably, the poly- ripple arc mirror of the high frequency is polymer convex mirror.
Preferably, the semiconductor package further includes：
Semiconductor chip, upside-down mounting are installed in surface of the re-wiring layer away from the antenna substrate, and with it is described heavy
New route layer is electrically connected；
Solder projection, positioned at surface of the re-wiring layer away from the antenna substrate, and with the re-wiring layer
Electrical connection.
The present invention also provides a kind of preparation method of semiconductor package, the preparation methods of the semiconductor package
Include the following steps：
1) antenna substrate is provided, the antenna substrate includes opposite first surface and second surface；
2) re-wiring layer is formed in the first surface of the antenna substrate；
3) antenna module is formed in the second surface of the antenna substrate；
4) the poly- ripple arc mirror of high frequency is formed in the second surface of the antenna substrate, the poly- ripple arc mirror of high frequency is by the antenna
Component encapsulates plastic packaging, for increasing the antenna gain of the antenna module.
Preferably, the antenna substrate being supplied in step 1) includes：Glass substrate, silicon substrate, 5880 bases of Roger
Plate, high molecular material substrate or composite substrate.
Preferably, in step 4), the poly- ripple arc mirror of the high frequency is formed including as follows in the second surface of the antenna substrate
Step：
4-1) the poly- ripple arc mirror material layer of high frequency is formed in the second surface of the antenna substrate；
4-2) the poly- ripple arc mirror material layer of the high frequency is processed to form the poly- ripple arc mirror of the high frequency.
Preferably, the material of the poly- ripple arc mirror material layer of the high frequency is polymer material, and the poly- ripple arc mirror of high frequency is poly-
Close object convex mirror.
Preferably, following steps are further included after step 4)：
5) semiconductor chip is provided, the semiconductor chip upside-down mounting is installed in the re-wiring layer away from the antenna
The surface of substrate, the semiconductor chip are electrically connected with the re-wiring layer；
6) solder projection, the solder projection and institute are formed in surface of the re-wiring layer away from the antenna substrate
State re-wiring layer electrical connection.
As described above, semiconductor package of the present invention and preparation method thereof, has the advantages that：The present invention's
Semiconductor package is used to support by the way that antenna module and re-wiring layer are arranged at two opposite surfaces of antenna substrate
The material of the antenna substrate of antenna module can select according to actual needs, select elastic higher, can pass through antenna substrate
Selection reduces the loss of antenna signal, while can reduce the size of antenna module；Surface of the antenna substrate away from antenna module
Re-wiring layer is set, and the re-wiring layer is used for bonding semiconductor chip, and can select to replace as needed different
Semiconductor chip is bonded on re-wiring layer to cooperate with antenna module, and use scope is wider, and use is more flexible and convenient；
By setting the poly- ripple arc mirror of high frequency in the top of the antenna module, the antenna gain of the antenna module can be dramatically increased,
So as to improve the performance of the fan-out package structure.
Description of the drawings
Fig. 1 is shown as the flow chart of the preparation method of the semiconductor package provided in the embodiment of the present invention one.
Fig. 2~Figure 13 is shown as each step institute of preparation method of the semiconductor package provided in the embodiment of the present invention one
The structure diagram of presentation, wherein, Figure 10 to Figure 13 is shown as the structure diagram of the semiconductor package of the present invention.
Component label instructions
10 antenna substrates
11 antenna modules
111 antenna elements
112 dielectric layers
113 conductive plugs
12 re-wiring layers
121 insulating layers
122 metal line layers
123 Underbump metallization layers
The poly- ripple arc mirror of 13 high frequencies
The poly- ripple arc mirror material layer of 131 high frequencies
14 semiconductor chips
15 connection soldered balls
16 solder projections
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Figure 13.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present embodiment provides a kind of preparation method of semiconductor package, the semiconductor packages
Preparation method include the following steps：
1) antenna substrate is provided, the antenna substrate includes opposite first surface and second surface；
2) re-wiring layer is formed in the first surface of the antenna substrate；
3) antenna module is formed in the second surface of the antenna substrate；
4) the poly- ripple arc mirror of high frequency is formed in the second surface of the antenna substrate, the poly- ripple arc mirror of high frequency is by the antenna
Component encapsulates plastic packaging, for increasing the antenna gain of the antenna module.
In step 1), S1 steps and Fig. 2 in please referring to Fig.1 provide an antenna substrate 10, and the antenna substrate 10 wraps
Include opposite first surface and second surface.
As an example, the antenna substrate 10 can be the substrate that any one can play a supporting role, it is preferable that institute
It is that smaller substrate is lost to antenna signal to state antenna substrate 10, it is further preferable that in the present embodiment, the antenna substrate 10 wraps
It includes：Glass substrate, silicon substrate, 5880 substrates of Roger, high molecular material substrate or composite substrate, the composite material base
Plate can include the compound composite substrate or inorganic of the compound composite substrate of different organic materials, different inorganic material
Material and the compound composite substrate of organic material.
As an example, the shape of the antenna substrate 10 can be set according to actual needs, the antenna substrate 10
Shape can be rectangle, circle, hexagon, triangle or trapezoidal etc., do not limit herein.
In step 2), S2 steps and Fig. 3 in please referring to Fig.1 form weight in the first surface of the antenna substrate 10
New route layer 12.
In one example, include in the re-wiring layer 12 one layer of metal line layer 122, at least one layer of insulating layer 121 and
Underbump metallization layer 123 forms the re-wiring layer 12 in the first surface of the antenna substrate 10 and includes the following steps：
2-1) the described one layer metal line layer 122 is formed in the first surface of the antenna substrate 10；
2-2) insulating layer 121 is formed in the first surface of the antenna substrate 10, the insulating layer 121 is by the gold
Belong to line layer 122 to encapsulate, and the upper surface of the insulating layer 121 is higher than the upper surface of the metal line layer 122；
2-3) in forming opening in the insulating layer 121, the opening exposes the part metal line layer 122；
2-4) in forming the Underbump metallization layer 123 in the opening, the Underbump metallization layer 123 and the metal
Line layer 122 is connected.
In another example, as shown in figure 3, including one layer of metal line layer 122, at least one layer in the re-wiring layer 12
Insulating layer 121 and Underbump metallization layer 123, forming the re-wiring layer 12 in the first surface of the antenna substrate 10 includes
Following steps：
2-1) insulating layer 121 described in first layer is formed in the first surface of the antenna substrate 10；
2-2) metal line layer 122 is formed in surface of the insulating layer described in first layer 121 away from the antenna substrate 10；
Insulating layer 121 described in the second layer 2-4) is formed in the upper surface of insulating layer described in first layer 121, described in the second layer absolutely
The metal line layer 122 is completely covered in edge layer 121；
2-5) in forming opening in insulating layer described in the second layer 121, the opening exposes the metal line layer 122；
2-6) in forming the Underbump metallization layer 123 in the opening.
As an example, in above-mentioned example, the material of the metal line layer 122 can be but be not limited only to copper, aluminium, nickel, only,
Silver or a kind of material in titanium or two or more combined materials, and the works such as PVD, CVD, sputtering, plating or chemical plating can be used
Skill forms the metal line layer 122.The material of the insulating layer 121 can be low k dielectric, specifically, the insulating layer
121 material can include a kind of material in epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass and fluorine-containing glass
Material, and the techniques such as spin coating, CVD, plasma enhanced CVD may be employed and form the insulating layer 121.
In step 3), S3 steps and Fig. 4 to Fig. 8 in please referring to Fig.1, in the second surface shape of the antenna substrate 10
Into antenna module 11.
In one example, as shown in Figures 4 to 7, the antenna module is formed in the second surface of the antenna substrate 10
11 specific method is：Forming one layer in the second surface of the antenna substrate 10 includes several antenna elements 111 as institute
Antenna module 11 is stated, wherein, several described antenna elements 111 are in along the direction parallel to 10 second surface of antenna substrate
Array distribution, annular spread or it is random be intervally arranged, the antenna element 111 be patch antenna or helical antenna.
Specifically, one layer of antenna material layer can be formed in the second surface of the antenna substrate 10, then pass through photoetching
Etching technics removes the extra antenna material layer, and the antenna material layer of reservation is i.e. as several described antenna elements
111.In other examples, first the pattern mask with opening can also be formed in the second surface of the antenna substrate 10
Layer, described be open define shape and the position of the antenna element 111；Then, then in the opening deposit antenna material
Layer is to form the 111 of the antenna；Finally, the Patterned masking layer is removed.
As an example, the antenna element 111 can be on the second surface edge of the antenna substrate 10 parallel to the day
The direction of line substrate 10 is distributed in arbitrary shape, and the antenna element 111 can be to include above-mentioned patch antenna or helical form
The antenna of the arbitrary shape of antenna.Wherein, it is that the antenna element 111 is patch antenna in Fig. 5, the patch antenna is described
Example of the second surface of antenna substrate 10 along the rectangular annular distribution in direction parallel to the antenna substrate 10；It is in Fig. 6
The antenna element 111 is patch antenna, and the patch antenna is on the second surface edge of the antenna substrate 10 parallel to described
The directional spreding of antenna substrate 10 has the example of the rectangular ring of the patch antenna into center；It is that the antenna is in Fig. 7
Rectangular coil shape antenna, the rectangular coil shape antenna is on the second surface edge of the antenna substrate 10 parallel to the antenna base
The direction of plate 10 is in the example of array distribution.
It should be noted that when the antenna element 111 is patch antenna, the patch antenna can be metal derby；Institute
State antenna element 111 for helical antenna when, the helical antenna can be formed for metal wire coiling is spiral.Except
Outside rectangular coil shape antenna as shown in Figure 6, the antenna element 111 can also be any other helical antenna, for example, circle
Shape helical antenna etc..
In another example, it is multiple described referring to Fig. 8, the antenna module 11 includes multiple antenna elements 111
Two layers of distribution that antenna element 111 is stacked on the second surface of the antenna substrate 10 in interval up and down, and adjacent two layers institute
It states and is connected via conductive plug 113 between antenna element 111；The antenna is formed in the second surface of the antenna substrate 10
Component 11 includes the following steps：
One layer of antenna for including several antenna elements 111 3-1) is formed in the second surface of the antenna substrate 10, it should
Layer antenna in several described antenna elements 111 along parallel to 10 second surface of antenna substrate direction in array distribution,
Annular spread or it is random be intervally arranged, the antenna element 111 be patch antenna or helical antenna；
Dielectric layer 112 3-2) is formed in the second surface of the antenna substrate 10, the dielectric layer 112 is completely covered described
Antenna element 111；
3-3) in formation conductive plug 113 in the dielectric layer 112, the conductive plug 113 and the antenna element 111
Electrical connection；
3-4) one layer of antenna for including several antenna elements 111 is formed again in the surface of the dielectric layer 112,
The antenna element 111 of several in this layer of antenna is along the direction parallel to 10 second surface of antenna substrate in array point
Cloth, annular spread random are intervally arranged.
In another example, multiple antenna elements 111 are also in up and down on the second surface of the antenna substrate 10
Three layers of stacked distribution of interval, at this point, step 3-4) further include following steps afterwards：
The surface of the dielectric layer 112 3-5) formed in upper step forms one layer of dielectric layer 112 again, described
Step 3-4 is completely covered in dielectric layer 112) in formed the antenna element 111；
3-6) in step 3-5) in formed the dielectric layer 112 in formed conductive plug 113, the conductive plug 113
With step 3-4) in formed the antenna element 111 be electrically connected；
3-7) in step 3-5) in formed the dielectric layer 112 surface formed again one layer include several described days
The antenna of line unit 111, several described antenna elements 111 are along parallel to 10 second surface of antenna substrate in this layer of antenna
Direction in array distribution, annular spread or random be intervally arranged.
In another example, multiple antenna elements 111 are on the second surface of the antenna substrate 10 also in up and down
The stacked Multi-layers distributing for being more than three layers in interval, at this point, step 3-7) further include repetition step 3-5 afterwards)~step 3-7) extremely
The step of one time few.
As an example, in above-mentioned each example, the material of the dielectric layer 112 can include but are not limited to silica
Or PET (polyethylene terephthalate), pass through such as spin coating, chemical vapor deposition method (CVD), plasma enhanced CVD
Etc. techniques be prepared.The material of the antenna element 111 and the conductive plunger 113 can include but are not limited to copper, aluminium,
It is more than one or both of nickel, gold, silver, tin, titanium；Wherein, the antenna element 111 and the conductive plunger 113 can lead to
The one kind crossed in physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering, plating or chemical plating is prepared into
It arrives.
It should be noted that in other examples, step 2) can also be exchanged with step 3), i.e., except said program it
Outside, can also the antenna module 11 first be formed in the second surface of the antenna substrate 10, then in the antenna substrate 10
First surface forms the re-wiring layer 12.
In step 4), S4 steps and Fig. 9 to Figure 11 in please referring to Fig.1, in the second surface of the antenna substrate 10
The poly- ripple arc mirror 13 of high frequency is formed, the antenna module 11 is encapsulated plastic packaging by the poly- ripple arc mirror 13 of high frequency, for increasing the day
The antenna gain of line component 11.
As an example, the second surface in the antenna substrate 10 forms the poly- ripple arc mirror 13 of the high frequency including walking as follows
Suddenly：
The poly- ripple arc mirror material layer 131 of high frequency 4-1) is formed in the second surface of the antenna substrate 10, as shown in Figure 9；Tool
Body, compressing and forming process, transfer shaping technology, hydraulic seal moulding process, vacuum lamination process or spin coating work may be employed
Skill forms the poly- ripple arc mirror material layer 131 of the high frequency in the second surface of the antenna substrate 10.The poly- ripple arc mirror material of high frequency
The material of the bed of material 131 can be but be not limited only to polyimides, silica gel, epoxy resin, curable polymer-based material or can
Cured resin-based materials etc..Certainly, in other examples, the material of the poly- ripple arc mirror material layer 131 of the high frequency can be with
For it is any other it is a kind of can cause aerial signal by polymer material.
4-2) the poly- ripple arc mirror material layer 131 of the high frequency is processed to form the poly- ripple arc mirror 13 of the high frequency, is such as schemed
Shown in 10 and Figure 11, wherein, Figure 10 with the antenna module 11 include one layer of antenna element 111 as an example, Figure 11 with
The antenna module 11 includes two layers of antenna element 111 and is used as example；Specifically, it may be employed but be not limited only to 3D engravings
Technique is processed the poly- ripple arc mirror material layer 131 of the high frequency to form the poly- ripple arc mirror 13 of the high frequency.
As an example, the poly- ripple arc mirror 13 of high frequency is convex mirror, i.e., the described poly- ripple arc mirror 13 of high frequency is to away from the day
The convex surface radian of 11 one side of line component protrusion.Since the poly- ripple arc mirror 13 of the high frequency is convex mirror, the antenna module 11 is sent
Aerial signal be easier to assemble by the poly- ripple arc mirror 13 of the high frequency for convex mirror when outwards propagating, so as to effectively carry
The antenna gain of the high antenna module 11.
As an example, the curved surface radian of the poly- ripple arc mirror 13 of high frequency can be set according to actual needs, herein not
It limits.
As an example, as shown in FIG. 12 and 13, wherein, Figure 12 includes one layer of antenna list with the antenna module 11
Member 111 is as an example, Figure 13 includes two layers of antenna element 111 as example using the antenna module 11；After step 4)
Further include following steps：
5) semiconductor chip 14 is provided, 14 upside-down mounting of semiconductor chip is installed in the re-wiring layer 12 away from institute
The surface of antenna substrate 10 is stated, the semiconductor chip 14 is electrically connected with the re-wiring layer 12；
6) solder projection 16 is formed in surface of the re-wiring layer 12 away from the antenna substrate 10, the solder is convex
Block 16 is electrically connected with the re-wiring layer 12.
As an example, in step 5), bonding back tracking method (bond-on-trace) may be employed by the semiconductor chip 14
It is bonded to the upper surface of the re-wiring layer 12；The bonding back tracking method is not repeated herein known to those skilled in the art.
Certainly, can also be used in the present embodiment a kind of any other bonding method by the semiconductor chip 14 be bonded to it is described again
The upper surface of wiring layer 12.
As an example, the front of the semiconductor chip 14 is formed with the contact pad for drawing its inside function device electricity
(not shown), 14 back bonding of semiconductor chip is in the upper surface of the re-wiring layer 12, and the semiconductor chip
14 contact pad is electrically connected with the re-wiring layer 12.Specifically, the semiconductor chip 14 can be via connection soldered ball
15 are bonded to the upper surface of the re-wiring layer 12；It is described connection soldered ball 15 material can be copper, nickel, tin and silver in extremely
Few one kind.
In one example, in step 6), weldering is formed in surface of the re-wiring layer 12 away from the antenna substrate 10
Material convex block 16 includes the following steps：
6-1) metal column is formed in surface of the re-wiring layer 12 away from the antenna substrate 10；
6-2) soldered ball is formed in surface of the metal column away from the re-wiring layer 12.
As an example, the material of the metal column can be copper, aluminium, nickel, gold, silver, a kind of material in titanium or two kinds and
Two or more combined materials, can by physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering,
Any one of plating or chemical plating technique form the metal column.The material of the soldered ball can be copper, aluminium, nickel, gold, silver,
A kind of material or two kinds and two or more combined materials in titanium can form the soldered ball by planting ball reflux technique.
In another example, the solder projection 16 is a soldered ball, can directly form weldering by planting ball reflux technique
Ball is as the solder projection 16.
Embodiment two
Please continue to refer to Figure 10 and Figure 11, the present embodiment also provides a kind of semiconductor package, the semiconductor packages
The preparation method that structure may be employed but be not limited only to described in embodiment one is prepared, the semiconductor package bag
It includes：Antenna substrate 10, the antenna substrate 10 include opposite first surface and second surface；Re-wiring layer 12 is described heavy
New route layer 12 is located on the first surface of the antenna substrate 10；Antenna module 11, the antenna module 11 are located at the day
On the second surface of line substrate；The poly- ripple arc mirror 13 of high frequency, the poly- ripple arc mirror 13 of high frequency are located at the second of the antenna substrate 10
On surface, and the antenna module 11 is encapsulated into plastic packaging, for increasing the antenna gain of the antenna module 11.
As an example, the antenna substrate 10 can be the substrate that any one can play a supporting role, it is preferable that institute
It is that smaller substrate is lost to antenna signal to state antenna substrate 10, it is further preferable that in the present embodiment, the antenna substrate 10 wraps
It includes：Glass substrate, silicon substrate, 5880 substrates of Roger, high molecular material substrate or composite substrate, the composite material base
Plate can include the compound composite substrate or inorganic of the compound composite substrate of different organic materials, different inorganic material
Material and the compound composite substrate of organic material.
As an example, the shape of the antenna substrate 10 can be set according to actual needs, the antenna substrate 10
Shape can be rectangle, circle, hexagon, triangle or trapezoidal etc., do not limit herein.
As an example, the re-wiring layer 12 includes：Insulating layer 121, the insulating layer 121 are located at the antenna substrate
10 first surface；At least one layer of metal line layer 122, the metal line layer 122 are located in the insulating layer 121；It is golden under convex block
Belong to layer 123, the Underbump metallization layer 123 is located at surface of the insulating layer 121 away from the antenna substrate 10, and with it is described
Metal line layer 122 is electrically connected.
As an example, in above-mentioned example, the material of the metal line layer 122 can be but be not limited only to copper, aluminium, nickel, only,
Silver or a kind of material in titanium or two or more combined materials, and the works such as PVD, CVD, sputtering, plating or chemical plating can be used
Skill forms the metal line layer 122.The material of the insulating layer 121 can be low k dielectric, specifically, the insulating layer
121 material can include a kind of material in epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass and fluorine-containing glass
Material, and the techniques such as spin coating, CVD, plasma enhanced CVD may be employed and form the insulating layer 121.
As an example, the antenna module 11 includes at least one antenna element 111, the antenna element 111 can be
Patch antenna or helical antenna.
In one example, as shown in Figure 10, the antenna module 11 includes multiple antenna elements 111, multiple described
Antenna element 111 is in monolayer distribution on the second surface of the antenna substrate 10.
As an example, the antenna element 111 can be on the second surface edge of the antenna substrate 10 parallel to the day
The direction of line substrate 10 is distributed in arbitrary shape, and the antenna element 111 can be to include above-mentioned patch antenna or helical form
The antenna of the arbitrary shape of antenna.Wherein, it is that the antenna element 111 is patch antenna in Fig. 5, the patch antenna is described
Example of the second surface of antenna substrate 10 along the rectangular annular distribution in direction parallel to the antenna substrate 10；It is in Fig. 6
The antenna element 111 is patch antenna, and the patch antenna is on the second surface edge of the antenna substrate 10 parallel to described
The directional spreding of antenna substrate 10 has the example of the rectangular ring of the patch antenna into center；It is that the antenna is in Fig. 7
Rectangular coil shape antenna, the rectangular coil shape antenna is on the second surface edge of the antenna substrate 10 parallel to the antenna base
The direction of plate 10 is in the example of array distribution.
It should be noted that when the antenna element 111 is patch antenna, the patch antenna can be metal derby；Institute
State antenna element 111 for helical antenna when, the helical antenna can be formed for metal wire coiling is spiral.Except
Outside rectangular coil shape antenna as shown in Figure 6, the antenna element 111 can also be any other helical antenna, for example, circle
Shape helical antenna etc..
In another example, the antenna module 11 includes multiple antenna elements 111, multiple antenna elements
If 111 distribution of dried earth layer being stacked on the second surface of the antenna substrate 10 in upper and lower interval, and antenna described in adjacent two layers
Be connected between unit 111, wherein, in Figure 11 with multiple antenna elements 111 the antenna substrate 10 second surface
Upper two layers distribution stacked in interval up and down is as example.
As an example, the antenna module 11 further includes dielectric layer 112, the dielectric layer 112 is located at least in adjacent two layers
Between the antenna element 111, by taking antenna element 111 described in Figure 11 is in two layers of distribution as an example, the dielectric layer 112 covers completely
Antenna element 111 described in lid first layer, antenna element 111 described in the second layer are located at the dielectric layer 112 away from the antenna base
The surface of plate 10.
As an example, the antenna module 11 further includes conductive plug 113, the conductive plug 113 is located at the medium
In layer 112, and it is electrically connected between antenna element 111 described in adjacent two layers, and by antenna element described in adjacent two layers 111.
As an example, in above-mentioned each example, the material of the dielectric layer 112 can include but are not limited to silica
Or PET (polyethylene terephthalate), pass through such as spin coating, chemical vapor deposition method (CVD), plasma enhanced CVD
Etc. techniques be prepared.The material of the antenna element 111 and the conductive plunger 113 can include but are not limited to copper, aluminium,
It is more than one or both of nickel, gold, silver, tin, titanium；Wherein, the antenna element 111 and the conductive plunger 113 can lead to
The one kind crossed in physical gas-phase deposition (PVD), chemical vapor deposition method (CVD), sputtering, plating or chemical plating is prepared into
It arrives.
As an example, the poly- ripple arc mirror 13 of high frequency is convex mirror, i.e., the described poly- ripple arc mirror 13 of high frequency is to away from the day
The convex surface radian of 11 one side of line component protrusion.Since the poly- ripple arc mirror 13 of the high frequency is convex mirror, the antenna module 11 is sent
Aerial signal be easier to assemble by the poly- ripple arc mirror 13 of the high frequency for convex mirror when outwards propagating, so as to effectively carry
The antenna gain of the high antenna module 11.
As an example, the material of the poly- ripple arc mirror 13 of high frequency can be but be not limited only to polyimides, silica gel, asphalt mixtures modified by epoxy resin
Fat, curable polymer-based material or curable resin-based materials etc..Certainly, in other examples, the high frequency gathers
The material of ripple arc mirror 13 can also be it is any other it is a kind of can cause aerial signal by polymer material.
As an example, the curved surface radian of the poly- ripple arc mirror 13 of high frequency can be set according to actual needs, herein not
It limits.
As an example, 2 and Figure 13 is please referred to Fig.1, wherein, Figure 12 includes multiple antenna lists with the antenna module 11
Member 111, multiple antenna elements 111 are in monolayer distribution on the second surface of the antenna substrate 10, and Figure 13 is with multiple institutes
Two layers that antenna element 111 is stacked on the second surface of the antenna substrate 10 in interval up and down is stated to be distributed as example；Institute
Semiconductor package is stated to further include：Semiconductor chip 14,14 upside-down mounting of semiconductor chip are installed in the re-wiring layer
12 surfaces away from the antenna substrate 10, and be electrically connected with the re-wiring layer 12；Solder projection 16, the solder projection
16 are located at surface of the re-wiring layer 12 away from the antenna substrate 10, and are electrically connected with the re-wiring layer 12.
As an example, the front of the semiconductor chip 14 is formed with the Contact welding for drawing its inside function device electricity
Pad, 14 back bonding of semiconductor chip are and described in surface of the re-wiring layer 12 away from the antenna substrate 10
The contact pad of semiconductor chip 14 is electrically connected with the re-wiring layer 12.Specifically, the semiconductor chip 14 can be through
Surface of the re-wiring layer 12 away from the antenna substrate 10 is bonded to by connection soldered ball 15；The material of the connection soldered ball 15
Material can be at least one of copper, nickel, tin and silver.
In one example, the solder projection 16 includes：Metal column, it is remote that the metal column is located at the re-wiring layer 12
It is electrically connected from the antenna substrate 10, and with the re-wiring layer 12；Soldered ball, it is separate that the soldered ball is located at the metal column
The surface of the re-wiring layer 12.The material of the metal column can be copper, aluminium, nickel, gold, silver, a kind of material in titanium or
Two kinds and two or more combined materials, can by physical gas-phase deposition (PVD), chemical vapor deposition method (CVD),
Any one of sputtering, plating or chemical plating technique forms the metal column.The material of the soldered ball can be copper, aluminium, nickel,
A kind of material or two kinds and two or more combined materials in gold, silver, titanium can form the weldering by planting ball reflux technique
Ball.
In another example, the solder projection 16 is soldered ball.
In conclusion semiconductor package of the present invention and preparation method thereof, the semiconductor package includes：My god
Line substrate, the antenna substrate include opposite first surface and second surface；Re-wiring layer, positioned at the antenna substrate
On first surface；Antenna module, on the second surface of the antenna substrate；The poly- ripple arc mirror of high frequency, positioned at the antenna base
On the second surface of plate, and the antenna module is encapsulated into plastic packaging, for increasing the antenna gain of the antenna module.The present invention
Semiconductor package by the way that antenna module and re-wiring layer are arranged at two opposite surfaces of antenna substrate, for propping up
Supportting the material of the antenna substrate of antenna module can select according to actual needs, select elastic higher, can pass through antenna substrate
Selection reduce the loss of antenna signal, while the size of antenna module can be reduced；Table of the antenna substrate away from antenna module
Face sets re-wiring layer, and the re-wiring layer is used for bonding semiconductor chip, and can select to replace as needed different
Semiconductor chip be bonded on re-wiring layer with antenna module cooperate, use scope is wider, use more flexibly side
Just；By setting the poly- ripple arc mirror of high frequency in the top of the antenna module, the antenna that can dramatically increase the antenna module increases
Benefit, so as to improve the performance of the fan-out package structure.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (16)
1. a kind of semiconductor package, which is characterized in that the semiconductor package includes：
Antenna substrate, the antenna substrate include opposite first surface and second surface；
Re-wiring layer, on the first surface of the antenna substrate；
Antenna module, on the second surface of the antenna substrate；
The poly- ripple arc mirror of high frequency encapsulates plastic packaging, for increasing on the second surface of the antenna substrate, and by the antenna module
Add the antenna gain of the antenna module.
2. semiconductor package according to claim 1, which is characterized in that the antenna substrate includes：Glass substrate,
Silicon substrate, 5880 substrates of Roger, high molecular material substrate or composite substrate.
3. semiconductor package according to claim 1, which is characterized in that the re-wiring layer includes：
Insulating layer, positioned at the second surface of the antenna substrate；
At least one layer of metal line layer, in the insulating layer；
Underbump metallization layer is electrically connected positioned at surface of the insulating layer away from the antenna substrate, and with the metal line layer.
4. semiconductor package according to claim 1, which is characterized in that the antenna module includes at least one day
Line unit, the antenna element are patch antenna or helical antenna.
5. semiconductor package according to claim 4, which is characterized in that the antenna module includes multiple days
Line unit, multiple antenna elements are in monolayer distribution on the first surface of the antenna substrate.
6. semiconductor package according to claim 4, which is characterized in that the antenna module includes multiple days
Line unit, if the distribution of dried earth layer that multiple antenna elements are stacked on the first surface of the antenna substrate in upper and lower interval,
And it is connected between antenna element described in adjacent two layers.
7. semiconductor package according to claim 4, which is characterized in that the antenna module further includes dielectric layer,
The dielectric layer is located at least between antenna element described in adjacent two layers.
8. semiconductor package according to any one of claims 5 to 7, which is characterized in that each layer antenna list
Member includes multiple antenna elements, and multiple antenna elements in each layer antenna element are along parallel to the antenna
The direction of substrate first surface is in array distribution, annular spread or random is intervally arranged.
9. semiconductor package according to claim 1, which is characterized in that the poly- ripple arc mirror of high frequency is convex mirror.
10. semiconductor package according to claim 1, which is characterized in that the poly- ripple arc mirror of high frequency is polymer
Convex mirror.
11. semiconductor package according to claim 1, which is characterized in that the semiconductor package further includes：
Semiconductor chip, upside-down mounting are installed in surface of the re-wiring layer away from the antenna substrate, and with the cloth again
Line layer is electrically connected；
Solder projection is electrically connected positioned at surface of the re-wiring layer away from the antenna substrate, and with the re-wiring layer
It connects.
A kind of 12. preparation method of semiconductor package, which is characterized in that the preparation method bag of the semiconductor package
Include following steps：
1) antenna substrate is provided, the antenna substrate includes opposite first surface and second surface；
2) re-wiring layer is formed in the first surface of the antenna substrate；
3) antenna module is formed in the second surface of the antenna substrate；
4) the poly- ripple arc mirror of high frequency is formed in the second surface of the antenna substrate, the poly- ripple arc mirror of high frequency is by the antenna module
Plastic packaging is encapsulated, for increasing the antenna gain of the antenna module.
13. the preparation method of semiconductor package according to claim 12, which is characterized in that be supplied in step 1)
The antenna substrate include：Glass substrate, silicon substrate, 5880 substrates of Roger, high molecular material substrate or composite material base
Plate.
14. the preparation method of semiconductor package according to claim 12, which is characterized in that in step 4), in institute
The second surface for stating antenna substrate forms the poly- ripple arc mirror of the high frequency and includes the following steps：
4-1) the poly- ripple arc mirror material layer of high frequency is formed in the second surface of the antenna substrate；
4-2) the poly- ripple arc mirror material layer of the high frequency is processed to form the poly- ripple arc mirror of the high frequency.
15. the preparation method of semiconductor package according to claim 14, which is characterized in that the poly- ripple arc of high frequency
The material of mirror material layer is polymer material, and the poly- ripple arc mirror of high frequency is polymer convex mirror.
16. the preparation method of the semiconductor package according to any one of claim 12 to 15, which is characterized in that step
It is rapid 4) to further include following steps afterwards：
5) semiconductor chip is provided, the semiconductor chip upside-down mounting is installed in the re-wiring layer away from the antenna substrate
Surface, the semiconductor chip is electrically connected with the re-wiring layer；
6) form solder projection in surface of the re-wiring layer away from the antenna substrate, the solder projection with it is described heavy
New route layer is electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711282034.4A CN108109984A (en) | 2017-12-07 | 2017-12-07 | Semiconductor package and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711282034.4A CN108109984A (en) | 2017-12-07 | 2017-12-07 | Semiconductor package and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108109984A true CN108109984A (en) | 2018-06-01 |
Family
ID=62209381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711282034.4A Pending CN108109984A (en) | 2017-12-07 | 2017-12-07 | Semiconductor package and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108109984A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816644A (en) * | 2019-04-10 | 2020-10-23 | 力成科技股份有限公司 | Antenna integrated packaging structure and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1627562A (en) * | 2003-12-09 | 2005-06-15 | 国际商业机器公司 | Apparatus and methods for constructing antennas using vias as radiating elements formed in a substrate |
| US20070026567A1 (en) * | 2005-06-01 | 2007-02-01 | Gottfried Beer | Semiconductor module comprising components for microwave engineering in plastic casing and method for the production thereof |
| TW200943637A (en) * | 2007-12-12 | 2009-10-16 | Broadcom Corp | Method and system for a phased array antenna embedded in an integrated circuit package |
| TW201413901A (en) * | 2012-06-29 | 2014-04-01 | Kyocera Slc Technologies Corp | Antenna substrate |
| CN104867912A (en) * | 2013-12-18 | 2015-08-26 | 英特尔公司 | Embedded Millimeter Wave Phased Array Module |
| US20150280327A1 (en) * | 2014-03-31 | 2015-10-01 | Nxp B.V. | Radar antenna system |
| US20170229783A1 (en) * | 2012-09-12 | 2017-08-10 | International Business Machines Corporation | Hybrid on-chip and package antenna |
| CN207517672U (en) * | 2017-12-07 | 2018-06-19 | 中芯长电半导体（江阴）有限公司 | Semiconductor package |
-
2017
- 2017-12-07 CN CN201711282034.4A patent/CN108109984A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1627562A (en) * | 2003-12-09 | 2005-06-15 | 国际商业机器公司 | Apparatus and methods for constructing antennas using vias as radiating elements formed in a substrate |
| US20070026567A1 (en) * | 2005-06-01 | 2007-02-01 | Gottfried Beer | Semiconductor module comprising components for microwave engineering in plastic casing and method for the production thereof |
| TW200943637A (en) * | 2007-12-12 | 2009-10-16 | Broadcom Corp | Method and system for a phased array antenna embedded in an integrated circuit package |
| TW201413901A (en) * | 2012-06-29 | 2014-04-01 | Kyocera Slc Technologies Corp | Antenna substrate |
| US20170229783A1 (en) * | 2012-09-12 | 2017-08-10 | International Business Machines Corporation | Hybrid on-chip and package antenna |
| CN104867912A (en) * | 2013-12-18 | 2015-08-26 | 英特尔公司 | Embedded Millimeter Wave Phased Array Module |
| US20150280327A1 (en) * | 2014-03-31 | 2015-10-01 | Nxp B.V. | Radar antenna system |
| CN207517672U (en) * | 2017-12-07 | 2018-06-19 | 中芯长电半导体（江阴）有限公司 | Semiconductor package |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816644A (en) * | 2019-04-10 | 2020-10-23 | 力成科技股份有限公司 | Antenna integrated packaging structure and manufacturing method thereof |
| US11532575B2 (en) | 2019-04-10 | 2022-12-20 | Powertech Technology Inc. | Integrated antenna package structure and manufacturing method thereof |
| CN111816644B (en) * | 2019-04-10 | 2023-08-29 | 力成科技股份有限公司 | Antenna integrated packaging structure and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9379064B2 (en) | Semiconductor device and method of mounting semiconductor die to heat spreader on temporary carrier and forming polymer layer and conductive layer over the die | |
| US9252075B2 (en) | Semiconductor device and method of forming a conductive via-in-via structure | |
| US8436439B2 (en) | Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure | |
| US9721925B2 (en) | Semiconductor device and method of forming overlapping semiconductor die with coplanar vertical interconnect structure | |
| US8350368B2 (en) | Semiconductor device and method of forming shielding layer after encapsulation and grounded through interconnect structure | |
| US9324672B2 (en) | Semiconductor device and method of forming dual-active sided semiconductor die in fan-out wafer level chip scale package | |
| CN102237281B (en) | Semiconductor device and manufacturing method thereof | |
| TW201108335A (en) | Semiconductor device and method of forming dam material around periphery of die to reduce warpage | |
| CN107706521A (en) | Fan-out-type antenna packages structure and preparation method thereof | |
| CN207852888U (en) | Semiconductor package with antenna module | |
| TW201946164A (en) | Single-shot encapsulation | |
| CN108336494B (en) | Antenna packaging structure and packaging method | |
| CN105870109A (en) | 2.5D integrated packaged semiconductor device and manufacturing method thereof | |
| CN107742778A (en) | Fan-out-type antenna packages structure and preparation method thereof | |
| CN109742056A (en) | The encapsulating structure and packaging method of antenna | |
| CN207852654U (en) | Semiconductor package with antenna module | |
| CN207517662U (en) | Fan-out package structure | |
| CN107910320A (en) | Semiconductor structure with antenna module and preparation method thereof | |
| CN207517680U (en) | Semiconductor structure with antenna module | |
| CN207517672U (en) | Semiconductor package | |
| CN209328892U (en) | The encapsulating structure of antenna | |
| CN108109984A (en) | Semiconductor package and preparation method thereof | |
| CN207977309U (en) | Fan-out-type semiconductor package with antenna module | |
| CN207852897U (en) | Fan-out-type antenna packages structure | |
| CN206931602U (en) | The two-sided system-level laminated packaging structure of plastic packaging fan-out-type |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province (place of business: No.9 Dongsheng West Road, Jiangyin City) Applicant after: Shenghejing micro semiconductor (Jiangyin) Co.,Ltd. Address before: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province Applicant before: SJ Semiconductor (Jiangyin) Corp. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180601 |
|
| RJ01 | Rejection of invention patent application after publication |