CN108109895B - Needle-shaped test piece, preparation method and its analysis method - Google Patents
Needle-shaped test piece, preparation method and its analysis method Download PDFInfo
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- CN108109895B CN108109895B CN201611043670.7A CN201611043670A CN108109895B CN 108109895 B CN108109895 B CN 108109895B CN 201611043670 A CN201611043670 A CN 201611043670A CN 108109895 B CN108109895 B CN 108109895B
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- needle
- test piece
- shaped test
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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Abstract
The present invention relates to a kind of needle-shaped test piece, preparation method and its analysis methods.Needle-shaped test piece includes substrate, component layer and heat dissipating layer.Component layer is configured on substrate, including area-of-interest.Heat dissipating layer covers the exposed surface of substrate and component layer, and the thermal conductivity of heat dissipating layer is greater than the thermal conductivity of substrate.
Description
Technical field
The present embodiments relate to a kind of test piece, preparation method and its analysis method more particularly to a kind of needle-shaped examinations
Piece, preparation method and its analysis method.
Background technique
In general, in order to which the material for analyzing semiconductor device forms, it will use atom-probe technology (atom probe
Technology) test piece prepared by semiconductor device analyzed.Atom-probe technology be using to include metal and
The test piece of the materials such as semiconductor carries out heating and provides electric field, so that ion is incident to mass spectrograph by strip, and then passes through
Time and charge needed for measurement ion incidence identifies ionic species.The method to increase mass spectrometric resolution power has at present
The shortcomings that time-consuming cost with increase.Therefore increasing mass spectrometric resolution power is still this field problem to be solved.
Summary of the invention
According to an embodiment of the invention, needle-shaped test piece includes substrate, component layer and heat dissipating layer.Component layer is configured at substrate
On, including area-of-interest.Heat dissipating layer covers the exposed surface of substrate and component layer, and the thermal conductivity of heat dissipating layer is greater than the heat of substrate
Conductance.
According to an embodiment of the invention, the preparation method of needle-shaped test piece includes the following steps.Cutting tip semiconductor device,
To form needle-shaped test piece, needle-shaped test piece includes section substrate and the members layer containing area-of-interest.In needle-shaped test piece
Heat dissipating layer is formed on exposed surface, the thermal conductivity of heat dissipating layer is greater than the thermal conductivity of substrate.
According to an embodiment of the invention, the analysis method of needle-shaped test piece includes the following steps.Needle-shaped test piece is provided comprising
Substrate, component layer and heat dissipating layer, wherein component layer is configured on substrate and including area-of-interest, heat dissipating layer cover substrate with
The exposed surface of component layer and the thermal conductivity of heat dissipating layer are greater than the thermal conductivity of substrate.Atom-probe skill is carried out to needle-shaped test piece
Art is formed with the atom analyzed in area-of-interest.
Detailed description of the invention
Comprising attached drawing to further understand the present invention, and attached drawing is incorporated to and in this specification and constitutes one of this specification
Point.Detailed description of the invention the embodiment of the present invention, and principle for explaining the present invention together with the description.
Fig. 1 is the flow chart of the preparation method of needle-shaped test piece according to some embodiments of the invention；
Fig. 2A to Fig. 2 C is the flow diagram of the preparation method of needle-shaped test piece according to some embodiments of the invention；
Fig. 3 is the flow chart of the analysis method of needle-shaped test piece according to some embodiments of the invention；
Fig. 4 is the schematic diagram of atom-probe technical equipment according to some embodiments of the invention.
Specific embodiment
Content disclosed below provides many different embodiments or examples of the different characteristic for implementing provided target.
The specific example of component and configuration discussed below be in order to convey the present invention in a simplified manner for the purpose of.Certainly, these
Only example rather than to limit.For example, in the following description, formed above second feature or in second feature
Fisrt feature may include that fisrt feature with second feature is formed as the embodiment directly contacted, and may also comprise fisrt feature and the
Additional features can be formed between two features, so that the embodiment that fisrt feature and second feature can be not directly contacted with.In addition, this
Invention reusable component symbol and/or letter in various examples.The reuse of component symbol is in order to simple and clear
Chu Qijian, and the relationship being not offered as between each embodiment to be discussed and/or configuration itself.
In addition, for ease of a component or feature and another component shown in description attached drawing or the relationship of feature,
Can be used herein for example " ... under ", " in ... lower section ", " lower part ", " ... on ", " in ... top ", " top " and similar
The spatially relative term of term.Other than orienting shown in attached drawing, the spatially relative term is intended to cover component and exists
Using or operation when be differently directed.Equipment can be otherwise oriented and (be rotated by 90 ° or in other orientations), and sky used herein
Between relative terms correspondingly make explanations.
Fig. 1 is the flow chart of the preparation method of needle-shaped test piece according to some embodiments of the invention.Fig. 2A to Fig. 2 C is root
According to the flow diagram of the preparation method of the needle-shaped test piece of some embodiments of the invention.
Referring to Fig. 1 and Fig. 2A, firstly, carrying out step S10, cutting tip semiconductor device (not shown), with shape
At needle-shaped test piece 102, needle-shaped test piece 102 includes section substrate 104 and the members layer 106 containing area-of-interest 110.?
In some embodiments, semiconductor device is, for example, chip comprising transistor, resistor, diode, optical diode or fuse sets
Part etc..Semiconductor device includes substrate 104 and is configured at component layer 106 in substrate 104 or on substrate 104.Component layer 106
Including area-of-interest 110.By taking semiconductor device includes fin field-effect transistor as an example, component layer 106 can for fin, channel,
The component of the fin transistors such as grid, source electrode and drain electrode, dielectric layer, but the present invention is not limited thereto.In some embodiments,
Substrate 104 is for example including silicon (SOI) substrate or silicon on sapphire on bulk silicon, doped or undoped silicon substrate, insulating layer
(SOS) substrate.Certainly, in some embodiments, substrate 104 may also comprise the appropriate elemental semiconductor such as germanium or diamond,
The appropriate compound semiconductor such as silicon carbide, gallium nitride, GaAs or indium phosphide or such as germanium silicide, silication indium, aluminium arsenide
The appropriate alloy semiconductor such as gallium or gallium arsenide phosphide.In general, component layer 106 includes conductor layer and dielectric layer.The material of conductor layer
Material includes metal, doped silicon or polysilicon etc..The material of dielectric layer includes oxide or nitride, such as silica, silicon nitride,
Titanium nitride, tantalum nitride, titanium aluminum carbide etc..
In some embodiments, the method for cutting semiconductor device includes using focused ion beam method (Focused Ion
Beam, FIB), electrochemical process or any method that can generate needle-shaped section.Focused ion beam method is, for example, to fill to part semiconductor
The surface layer set carries out local splash focused ion beam to complete.For example, in ion beam cutting process, by will with gallium from
Focused ion beam based on son is incident to semiconductor device surface layer, to be etched selectively to semiconductor device.Wherein, it will generate poly-
The house vacuum pressure of pyrophosphate ion beam maintains about 7 microtorrs to 10 microtorrs or so.In this way, which focused ion beam can be with such as 0
Degree is to the very small angle impacts semiconductor device surface layers such as 5 degree, to obtain needle-shaped test piece 102.
For macroscopic view, the shape for carrying out the needle-shaped test piece 102 after step S10 is, for example, to be similar to cone (such as Fig. 2A
It is shown).In some embodiments, the cone vertex angle theta of needle-shaped test piece 102 is about 12 degree to 24 degree.However, from the point of view of microcosmic, needle
Shape test piece 102 is essentially the cone with 102a at the top of arc.In some embodiments, 102a is, for example, half at the top of arc
Spherical top.In some embodiments, the diameter d of 102a is about 7 nanometers to 13 nanometers at the top of the arc of needle-shaped test piece 102.?
In some embodiments, the diameter d of area-of-interest 110 is about 40 nanometers to 60 nanometers.In some embodiments, needle-shaped test piece
Vertical range h between 102 top 102a and area-of-interest 110 is about 50 nanometers to 150 nanometers.In some embodiments
In, the vertical height of needle-shaped test piece 102 is, for example, about 5 microns to 15 microns.In some embodiments, since substrate 104 accounts for needle
Maximum ratio in shape test piece 102, therefore the overall permanence of needle-shaped test piece 102 is still mostly concerned with the material of substrate 104.
Referring to Fig. 1 and Fig. 2 B, then, step S20 is carried out, dissipated in being formed on the exposed surface of needle-shaped test piece 102
Thermosphere 120, the thermal conductivity of heat dissipating layer 120 are greater than the thermal conductivity of substrate 104.Heat dissipating layer 120 is, for example, to be coated on needle-shaped test piece 102
Entire exposed surface, that is, be coated on the top surface of the side surface of substrate 104 and the side surface of component layer 106.One
In a little embodiments, substrate 104 is, for example, silicon substrate, and thermal conductivity is, for example, 4 watts of rice-1It opens-1.In some embodiments,
The thermal conductivity of heat dissipating layer 120 is about 10 watts of rice-1It opens-1To 2300 watts of rice-1It opens-1.For example, heat dissipating layer 120
Material be, for example, metal, including copper, gold, aluminium or silver etc..In some embodiments, the material of heat dissipating layer 120 should be avoided and institute
The needle-shaped test piece 102 of analysis has a Mass Interference, and the gap of volatilize electric field and the surface mass of needle-shaped test piece 102 do not answer it is excessive.
In some embodiments, the ratio of the thickness of the thickness of heat dissipating layer 120 and area-of-interest 110 is about 1:1 to 1:3.Some
In embodiment, the thickness that heat dissipating layer 120 is located at the side of needle-shaped test piece 102 is, for example, 20 nanometers to 40 nanometers.In some implementations
In example, the thickness that heat dissipating layer 120 is located at the top of needle-shaped test piece 102 is, for example, 30 nanometers to 60 nanometers.Heat dissipating layer 120 is, for example,
There is good adhesion for the main material (such as silicon) of needle-shaped test piece 102.In some embodiments, heat dissipating layer 120
It is made of in this way single kind of conductor material, but the present invention is not limited thereto.In some embodiments, heat dissipating layer 120 is, for example,
It is conformally formed on the exposed surface of needle-shaped test piece 102.In some embodiments, the method for formation heat dissipating layer 120 is, for example,
Deposition manufacture process or coating process etc., wherein deposition manufacture process includes physical vapour deposition (PVD) processing procedure, chemical vapor deposition process or chemistry
Deposition manufacture process etc., coating process include rotary coating process etc..
In some embodiments, by taking deposition manufacture process forms heat dissipating layer 120 as an example, e.g. needle-shaped test piece 102 is placed in
In ion beam sputter board 200, to carry out the deposition of heat dissipating layer 120.In detail, ion beam sputter board 200 is, for example, to wrap
Include the first ion gun 202, the second ion gun 204, target 206 and microscope carrier 208.Wherein, the first ion gun 202 and the second ion
Rifle 204 is oppositely arranged, and the first ion gun 202 can be described as ion gun again, and the second ion gun 204 can be described as lower ion gun again.Target
Material 206 is the material of heat dissipating layer 120 to be formed, and the metal targets such as copper, gold, aluminium or silver are configured at the first ion gun 202
Between the second ion gun 204.Microscope carrier 208 is carried to carry needle-shaped test piece 102 and be fixed thereon needle-shaped test piece 102
Platform 208 itself can be rotated and be tilted.It is to show microscope carrier 208 and carry a needle-shaped examination in the embodiment shown in Fig. 2 B
For piece 102, but the present invention is not limited thereto.(not shown) in some embodiments, microscope carrier 208 be, for example, include pedestal with
At least one microscope carrier being configured on pedestal, wherein secondary microscope carrier (coupon) accommodates needle-shaped test piece 102.That is, microscope carrier
The quantity of the 208 needle-shaped test pieces 102 that can be carried is determined by the quantity of secondary microscope carrier.(not shown) in some embodiments, it is secondary
Microscope carrier may include groove, so that the needle-shaped test piece 102 of a part is located in groove to fix it.
In some embodiments, firstly, needle-shaped test piece 102 is fixed on microscope carrier 208.Then, just with needle-shaped test piece 102
To the mode of target 206, so that the atom 206a or cluster (cluster) of target 206 are positive heavy to carrying out in needle-shaped test piece 102
Product.Wherein, needle-shaped test piece 102 is rotated because microscope carrier 208 rotates.In some embodiments, the rotation angle of microscope carrier 208 is, for example,
Between 20rpm to 40rpm.Then, on the position of multiple tilt angles of microscope carrier 208, with the atom 206a of target 206 or group
Cluster favours the mode of needle-shaped test piece 102, carries out glancing angle deposition respectively to needle-shaped test piece 102.Wherein, mobile microscope carrier can be passed through
Needle-shaped test piece 102 is moved in 208 position.In some embodiments, on the basis of trunnion axis HA, the inclination angle alpha of microscope carrier 208
E.g. -40 degree to+40 degree or -80 degree to+80 degree.In detail, when being biased to the first ion gun 202 and the second ion
When rifle 204, the first ion gun 202 and the second ion gun 204 can make ion acceleration hit target 206, so that the atom got
206a or cluster (cluster) are deposited in needle-shaped test piece 102.In some embodiments, the ion beam 205 of target 206 is hit
Current strength be, for example, 30mA to 90mA.In some embodiments, since needle-shaped test piece 102 can be rotated with microscope carrier 208
With inclination, therefore heat dissipating layer 120 can be formed uniformly in needle-shaped test piece 102, completely to cover the exposure of needle-shaped test piece 102
Surface.Although be illustrated for the board to be deposited is ion beam sputter board in the present embodiment, this hair
It is bright to be not limited thereto.In other embodiments, other, which also can be used, can carry out the board of deposition manufacture process or coating process etc..
C referring to figure 2. then obtains needle-shaped test piece 100.In some embodiments, needle-shaped test piece 100 includes part half
Conductor device, the fin transistor etc. including nano-scale.Needle-shaped test piece 100 include substrate 104, component layer 106 and
Heat dissipating layer 120.Component layer 106 is configured on substrate 104, including area-of-interest 110.Heat dissipating layer 120 covers substrate 104 and group
The exposed surface of part layer 106, and the thermal conductivity of heat dissipating layer 120 is greater than the thermal conductivity of substrate 104.
In some embodiments, when the surface of needle-shaped test piece 102 has the defects of such as recess or cavity, can also lead to
Ion beam sputter board 200 above-mentioned is crossed to be filled up, so that needle-shaped test piece 100 has substantially smooth surface.Wherein,
Recess above-mentioned or cavity may be from remove semiconductor material or conductor material be peeled back to (delayer) processing procedure caused by, because
This usually need to be to the processing procedures such as progress gap filling (gap filling) at this.In addition, in the above-described embodiment, all passing through
Ion beam sputter board 200 forms film layer using as heat dissipating layer 120 or hole-filling material in the surface of needle-shaped test piece 102, but
(not shown) in other embodiments, if not placing target in ion beam sputter board 200, using ion beam sputter machine
Platform 200 to carry out surface cleaning to test piece 102, that is to say, that by from the first ion gun 202 and the second ion gun 204
Ion hit 102 surface of test piece to reach cleaning purpose.
Fig. 3 is the flow chart of the analysis method of needle-shaped test piece according to some embodiments of the invention.Fig. 4 is according to the present invention
The schematic diagram of the atom-probe technical equipment of some embodiments.Referring to figure 3., firstly, carrying out step S310, needle-shaped test piece is provided
100, with aforementioned structure.In detail, a part of needle-shaped test piece 100 from semiconductor device comprising interested
Region 110.Needle-shaped test piece 100 is used as the test piece that the subsequent area-of-interest 110 to semiconductor device is tested or characterized.
Referring to figure 3., then, step S320 is carried out, atom-probe technology is carried out to needle-shaped test piece 100, it is emerging with analysis sense
Atom composition in interesting region 110.In some embodiments, atom-probe technology can provide the atom of area-of-interest 110
The stereo-picture and chemical material of grade form.As shown in figure 4, atom-probe technical equipment 400 be, for example, including laser source 410,
Location sensitive detector (position sensitive detector) 420 and processing unit 430.Firstly, with laser source
Laser pulse 410 caused by 410 irradiates the top of needle-shaped test piece 100.Since the top of needle-shaped test piece 100 is by laser pulse
422 irradiations, therefore the atom 412 in needle-shaped test piece 100 can be removed layer by layer and (such as remove).Then, according to position
Generated electric field between sensor detector 420 and needle-shaped test piece 100, location sensitive detection can be projected to by being removed atom 412
On device 420.Therefore, it is possible to use reaching sensor detector 420 with the removed atom 412 at the time of providing pulse to laser
At the time of between time determine flight time (time of flight) of atom 412 (namely ion), and then confirm matter
Lotus ratio (namely m/q).Then, the x of detected atom 412, y-coordinate can be used on sensor detector 420 to rebuild corresponding to needle
The atom home position at the top of shape test piece 100.Wherein, processing unit 430 can collect position data by sensor detector 420
And the stereo-picture at the top of needle-shaped test piece 100 is rebuild by atomic species.
In some embodiments, the outer layer of needle-shaped test piece is configured with heat dissipating layer, and the thermal conductivity of heat dissipating layer is greater than needle-shaped examination
The thermal conductivity of main part in piece.Since heat dissipating layer has good thermal conductivity, in the mistake for carrying out atom-probe technology
Cheng Zhong is avoided that on the surface of needle-shaped test piece, to prevent the generation of ambient noise, and then mass spectrometric resolution is substantially improved in accumulation of heat
Ability.In addition, in some embodiments, heat dissipating layer is only made of homogenous material, therefore it is avoided that the material interference matter of heat dissipating layer
It composes resolution capability or increases the added burden of mass spectrometric resolution.Furthermore in some embodiments, the preparation method of needle-shaped test piece is applicable in
In the lamination of all semiconductor layers and conductor layer, therefore can be widely used for preparing the test piece of various semiconductor devices.In addition,
In some embodiments, the preparation method of needle-shaped test piece is had simple step and can be reached using existing board, therefore needle-shaped
The preparation method of test piece has the advantages that high yield and low cost.
In some embodiments, a kind of needle-shaped test piece includes substrate, component layer and heat dissipating layer.Component layer is configured at substrate
On, including area-of-interest.Heat dissipating layer covers the exposed surface of substrate and component layer, and the thermal conductivity of heat dissipating layer is greater than the heat of substrate
Conductance.
In some embodiments, a kind of preparation method of needle-shaped test piece includes the following steps.Cutting tip semiconductor device,
To form needle-shaped test piece, needle-shaped test piece includes section substrate and the members layer containing area-of-interest.In needle-shaped test piece
Heat dissipating layer is formed on exposed surface, the thermal conductivity of heat dissipating layer is greater than the thermal conductivity of substrate.
In some embodiments, a kind of analysis method of needle-shaped test piece includes the following steps.Needle-shaped test piece is provided comprising
Substrate, component layer and heat dissipating layer, wherein component layer is configured on substrate and including area-of-interest, heat dissipating layer cover substrate with
The exposed surface of component layer and the thermal conductivity of heat dissipating layer are greater than the thermal conductivity of substrate.Atom-probe skill is carried out to needle-shaped test piece
Art is formed with the atom analyzed in area-of-interest.
Foregoing has outlined the features of multiple embodiments, make those skilled in the art that can be better understood upon aspect of the invention.This
Field it should be understood to the one skilled in the art that it can use the present invention as the foundation for designing or modifying other techniques and structure easily, with
It carries out the identical purpose of embodiments described herein and/or reaches same advantage.It should also be understood by those skilled in the art that this
Equivalent configuration does not simultaneously depart from spirit and scope of the invention, and those skilled in the art are in without departing from the spirit and model
It can be to making various changes, displacement and change herein in the case where farmland.
Although the present invention is disclosed as above with embodiment, however, it is not to limit the invention, any technical field
Middle those of ordinary skill, without departing from the spirit and scope of the present invention, when can make a little change and retouching, in the present invention
In range.
Claims (10)
1. a kind of needle-shaped test piece characterized by comprising
Substrate；
Component layer is configured on the substrate, including area-of-interest；And
The surface of the substrate with the component layer for including the area-of-interest, the heat dissipating layer is completely covered in heat dissipating layer
Thermal conductivity be greater than the substrate thermal conductivity.
2. needle-shaped test piece according to claim 1, which is characterized in that wherein the thermal conductivity of the heat dissipating layer is 10 watts
Rice-1It opens-1To 2300 watts of rice-1It opens-1。
3. needle-shaped test piece according to claim 1, which is characterized in that wherein the heat dissipating layer includes copper, gold, aluminium or silver.
4. needle-shaped test piece according to claim 1, which is characterized in that the wherein diameter at the top of the arc of the needle-shaped test piece
It is 7 nanometers to 13 nanometers.
5. needle-shaped test piece according to claim 1, which is characterized in that wherein the apex angle of the needle-shaped test piece is 12 degree to 24
Degree.
6. needle-shaped test piece according to claim 1, which is characterized in that wherein the top of the needle-shaped test piece and the sense are emerging
Vertical range between interesting region is 50 nanometers to 150 nanometers.
7. a kind of preparation method of needle-shaped test piece characterized by comprising
Cutting tip semiconductor device, to form needle-shaped test piece, the needle-shaped test piece includes section substrate and contains region of interest
The members layer in domain；And
In forming heat dissipating layer on the exposed surface of the needle-shaped test piece, the thermal conductivity of the heat dissipating layer is greater than the thermal conductivity of the substrate
Rate.
8. the preparation method of needle-shaped test piece according to claim 7, which is characterized in that wherein cutting tip semiconductor device
Method include use focused ion beam method or electrochemical process.
9. the preparation method of needle-shaped test piece according to claim 7, which is characterized in that wherein form the method packet of heat dissipating layer
Include deposition manufacture process or coating process.
10. a kind of analysis method of needle-shaped test piece characterized by comprising
Needle-shaped test piece is provided comprising substrate, component layer and heat dissipating layer, wherein the component layer be configured on the substrate and
Including area-of-interest, the table of the substrate with the component layer for including the area-of-interest is completely covered in the heat dissipating layer
The thermal conductivity of face and the heat dissipating layer is greater than the thermal conductivity of the substrate；And
Atom-probe technology is carried out to the needle-shaped test piece, is formed with analyzing the atom in the area-of-interest.
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| CN109307784B (en) * | 2018-10-12 | 2020-12-11 | 南京理工大学 | Preparation method of semiconductor needle tip sample for three-dimensional atom probe detection |
| CN109540947B (en) * | 2018-12-21 | 2021-04-02 | 北京科技大学 | Method for preparing nose tip sample for FIB three-dimensional reconstruction |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088137A (en) * | 2004-12-21 | 2007-12-12 | 埃美格科学仪器公司 | Laser atom probes |
| CN104701203A (en) * | 2013-12-09 | 2015-06-10 | 国际商业机器公司 | Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices |
| CN105865862A (en) * | 2016-03-25 | 2016-08-17 | 江苏省沙钢钢铁研究院有限公司 | Making method of three-dimensional atom probe sample |
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2016
- 2016-11-24 CN CN201611043670.7A patent/CN108109895B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088137A (en) * | 2004-12-21 | 2007-12-12 | 埃美格科学仪器公司 | Laser atom probes |
| CN104701203A (en) * | 2013-12-09 | 2015-06-10 | 国际商业机器公司 | Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices |
| CN105865862A (en) * | 2016-03-25 | 2016-08-17 | 江苏省沙钢钢铁研究院有限公司 | Making method of three-dimensional atom probe sample |
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