CN108108309A - It is related to concurrent access method, solid state disk and the computer of more nand flash memories - Google Patents
It is related to concurrent access method, solid state disk and the computer of more nand flash memories Download PDFInfo
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- CN108108309A CN108108309A CN201711483137.7A CN201711483137A CN108108309A CN 108108309 A CN108108309 A CN 108108309A CN 201711483137 A CN201711483137 A CN 201711483137A CN 108108309 A CN108108309 A CN 108108309A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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Abstract
The present invention relates to a kind of concurrent access methods in storage system of more nand flash memory compositions, the quantity of the nand flash memory is N, the quantity of passage is equal to the quantity of nand flash memory, the quantity of the Physical Page of the nand flash memory is M, and the logical address of the request of one-time continuous is 0 to M*N 1, wherein, M and N is positive integer, M >=2, N >=2, including：The continuous request is by queue management device, and the jth time request for the i-th passage, the logical address of distribution is 1 i*N j of M*N；It is written to successively after flash memory translation layer address of cache, request allocation manager and nand flash memory controller in the storage system of more nand flash memory compositions.System I/O performances improve, dirty piece of erasing times and active page number of copy times when reducing the garbage reclamation based on NAND Flash SSD.Invention further relates to access method, solid state disk and the computer in a kind of storage system of more nand flash memory compositions.
Description
Technical field
The present invention relates to nand flash memory, more particularly to the access method, more in the storage system of more nand flash memories composition
Concurrent access method, solid state disk and computer in the storage system of nand flash memory composition.
Background technology
NAND Flash have that small, access speed is fast, power is small and antidetonation as a kind of nonvolatile semiconductor memory member
Good characteristics are waited, therefore, the storage system (solid state disk (SSD) is exactly a typical example) of more nand flash memory compositions is
Applied to military and civilian field of storage.It should be noted that below in the introduction, for convenience, more NAND dodge
The storage system for depositing composition is replaced with solid state disk.The two is in a sense be exactly equivalence in other words.
But NAND Flash devices cause SSD management with certain difficulty with some intrinsic limitations, it is main
Limiting factor mainly has：
(1) non-instant update.Before certain one page is re-write erasing operation must be carried out to the block where this one page, without
Can write direct, and erasing operation with block (block) rather than with page (page) be unit；
(2) each piece of Nand Flash erasing/write-in numbers before its failure are limited.For individual layer NAND Flash (SLC
NAND Flash) generally there are tens thousand of time erasing/write-in numbers, and multilayer NAND Flash (MLC NAND Flash) are then only
There is the erasing/write-in number of thousands of times.Once overstep the extreme limit write/erase number in effect, then NAND Flash will fail,
It can not be continuing with.
At present, the SSD typical storage systems based on NAND Flash mainly use repeating query (Round-Robin) concurrent access
Method, as shown in Figure 1.
In order to make full use of the concurrency of the more a passages of SSD, all access requests are distributed to by repeating query concurrent access method
It is all to arrive Parallel Unit, as allowed these requests can be in the situation for withouting waiting for or hanging up in multi-chip either layer (die)
Under, while serviced, so as to reach higher I/O rates.Represented in Fig. 1 be exactly a simplified SSD, gather around there are four
Passage, each passage are respectively NAND Flash0~4 there are one NAND Flash chips.Logical address is write in file system
During LPN (Logical Page Number) 0~15, repeating query concurrent access method is deposited this 16 times requests by Fig. 1 modes
Storage.
There are following technical problems for traditional technology：
Mainly the logical address page of original order is dispersedly distributed entire using repeating query concurrent access method in SSD
In storage medium, so as to cause data distribution and file system data organizational form in physical storage medium inconsistent.This for
Disk etc. will not can bring any harmful effect by newer storage medium immediately, but NAND Flash must after being erased
It can write, be a kind of non-immediate update device, data organization form is inconsistent between file system and physical medium can cause greatly
The garbage reclamation of amount, so as to cause harmful effect to the I/O performances of SSD.
The content of the invention
Based on this, it is necessary to for above-mentioned technical problem, provide the visit in a kind of storage system of more nand flash memory compositions
Ask method.
A kind of concurrent access method in storage system of more nand flash memory compositions, the quantity of the nand flash memory is N, is led to
The quantity in road is equal to the quantity of nand flash memory, and the quantity of the Physical Page of the nand flash memory is M, the logic of the request of one-time continuous
Address for 0 to M*N-1, wherein, M and N are positive integers, M >=2, N >=2, including：
The continuous request is by queue management device, the jth time request for the i-th passage, and the logical address of distribution is
M*N-1-i*N-j；
It is written to successively after flash memory translation layer address of cache, request allocation manager and nand flash memory controller more
In the storage system of nand flash memory composition.
Concurrent access method in the storage system of above-mentioned more nand flash memory compositions, system I/O performances are improved, reduced more
Dirty piece of erasing times and active page number of copy times during the garbage reclamation of the storage system of nand flash memory composition, and using effectively
Queue management method takes full advantage of the concurrency of all passages in the storage system that more nand flash memories form, therefore, more NAND
The I/O performances of the storage system of flash memory composition are improved；The storage system of more nand flash memory compositions is extended to a certain extent
System service life, in the identical usage time of the storage system of more nand flash memories composition, method of the invention is compared with other
Concurrent access method reduces dirty piece during garbage reclamation of erasing times, since the limit erasing times of NAND Flash are certain
, therefore, the storage system formed using more nand flash memories of the method for the present invention can use the longer time.
In other one embodiment, the method for the parallel transmission that the request allocation manager is used for N channel
For repeating query.
A kind of access method in storage system of more nand flash memory compositions, the quantity of the nand flash memory is N, passage
Quantity is equal to the quantity of nand flash memory, and the quantity of the Physical Page of the nand flash memory is M, wherein, M and N are positive integers, M >=
2, N >=2, including：
Judge the whether continuous request of request；
If the request is continuously to ask, judge whether the length L of the request is more than M*N；
If the length L of the request is more than M*N, the storage system of [L, M*N] secondary above-mentioned more nand flash memories composition is performed
Concurrent access method in system writes the request；
As MOD (L, M*N) ≠ 0, performed using the repeating query concurrent access method write-in request remaining after previous step
Part.
In other one embodiment, when the request is not continuously to ask, using repeating query concurrent access method
Write the request.
In other one embodiment, when the length L of the request is less than M*N, using repeating query concurrent access method
Write the request.
A kind of solid state disk, concurrent access method in the storage system formed using above-mentioned more nand flash memories or on
Access method in the storage system for the more nand flash memories composition stated.
A kind of computer includes above-mentioned solid state disk.
Description of the drawings
Fig. 1 is a kind of schematic diagram of distribution of the request of repeating query concurrent access method in background technology in physical space.
Fig. 2 is the concurrent access method in a kind of storage system of more nand flash memory compositions provided by the embodiments of the present application
System construction drawing.
Fig. 3 is the concurrent access method in a kind of storage system of more nand flash memory compositions provided by the embodiments of the present application
The schematic diagram of the request write sequence of one application scenarios.
Fig. 4 is the concurrent access method in a kind of storage system of more nand flash memory compositions provided by the embodiments of the present application
The request of one application scenarios is in the schematic diagram of the distribution of physical space.
Fig. 5 is the stream of the access method in a kind of storage system of more nand flash memory compositions provided by the embodiments of the present application
Cheng Tu.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Refering to Fig. 2, a kind of concurrent access method in storage system of more nand flash memory compositions, the number of the nand flash memory
Measure as N, the quantity of passage is equal to the quantity of nand flash memory, and the quantity of the Physical Page of the nand flash memory is M, one-time continuous please
The logical address asked for 0 to M*N-1, wherein, M and N are positive integers, M >=2, N >=2, including：
The continuous request is by queue management device, the jth time request for the i-th passage, and the logical address of distribution is
M*N-1-i*N-j；
It is written to successively after flash memory translation layer address of cache, request allocation manager and nand flash memory controller more
In the storage system of nand flash memory composition.
Concurrent access method in the storage system of above-mentioned more nand flash memory compositions, system I/O performances are improved, reduced more
Dirty piece of erasing times and active page number of copy times during the garbage reclamation of the storage system of nand flash memory composition, and using effectively
Queue management method takes full advantage of the concurrency of all passages in the storage system that more nand flash memories form, therefore, more NAND
The I/O performances of the storage system of flash memory composition are improved；The storage system of more nand flash memory compositions is extended to a certain extent
System service life, in the identical usage time of the storage system of more nand flash memories composition, method of the invention is compared with other
Concurrent access method reduces dirty piece during garbage reclamation of erasing times, since the limit erasing times of NAND Flash are certain
, therefore, the storage system formed using more nand flash memories of the method for the present invention can use the longer time.
In other one embodiment, the method for the parallel transmission that the request allocation manager is used for N channel
For repeating query.It is appreciated that the method in addition to repeating query can also be used.
A specific application scenarios are described below：
Refering to Fig. 3 and Fig. 4, M=N=4, if there is write request LPN0~15, under the method according to the invention under, queue pipe
Device is managed by request data write sequence as shown in figure 3, these requests are as shown in Figure 4 in the distribution of physical space.The side of the present invention
The method that method still uses repeating query, will ask to be write between all parallel channels successively, therefore, take full advantage of
The concurrency of all passages does not influence the storage system I/O performances of more nand flash memories composition, but due to all requests
By queue management device, by write sequence, logically space rearranges, and therefore, the final data that write are in physical space
The distribution of distribution and logical space be consistent.
For Fig. 4, it can be seen that the present invention method under the action of, a physics logical page (LPAGE) in the block be it is continuous,
Therefore, when there is continuous update operation, erasing times and active page number of copy times can substantially reduce.For example, similary update
LPN0~3, then in the lower i.e. distribution of Fig. 4 of method of the invention, it is only necessary to wipe a Physical Page, and need not carry out any
The duplication of effective Physical Page, accordingly, with respect to only with the repeating query concurrent access method (side introduced in background technology
Method), the storage system I/O performances of more nand flash memory compositions greatly improve.
A kind of access method in storage system of more nand flash memory compositions, the quantity of the nand flash memory is N, passage
Quantity is equal to the quantity of nand flash memory, and the quantity of the Physical Page of the nand flash memory is M, wherein, M and N are positive integers, M >=
2, N >=2, including：
S110, judge the whether continuous request of request, if the request is continuously to ask, performs S120, otherwise hold
Row S150.
S120, judge whether the length L of the request is more than M*N, if the length L of the request is more than M*N, perform
Otherwise S130 performs S150.
The storage system of S130, the secondary above-mentioned more nand flash memories composition of execution [L, M*N] (two numbers be divided by bracket function)
In concurrent access method write the request.
S140, when MOD (L, M*N) ≠ 0 (two numbers, which are divided by, takes the remainder function), utilize repeating query concurrent access method write-in institute
It states request and performs remaining part after previous step, terminate to perform.
S150, the request is write using repeating query concurrent access method.
A kind of solid state disk, concurrent access method in the storage system formed using above-mentioned more nand flash memories or on
Access method in the storage system for the more nand flash memories composition stated.
A kind of computer includes above-mentioned solid state disk.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that come for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (7)
1. a kind of concurrent access method in storage system of more nand flash memory compositions, the quantity of the nand flash memory is N, described
The quantity of passage is equal to the quantity of nand flash memory, and the quantity of the Physical Page of the nand flash memory is M, and the request of one-time continuous is patrolled
Volume address is 0 to M*N-1, wherein, M and N are positive integers, M >=2, N >=2, which is characterized in that including：
The continuous request is by queue management device, and the jth time request for the i-th passage, the logical address of distribution is M*N-
1-i*N-j；
More NAND are written to after flash memory translation layer address of cache, request allocation manager and nand flash memory controller successively to dodge
In the storage system for depositing composition.
2. the concurrent access method in the storage system of more nand flash memory compositions according to claim 1, which is characterized in that
The method for the parallel transmission that the request allocation manager is used for N channel is repeating query.
3. the access method in a kind of storage system of more nand flash memories composition, the quantity of the nand flash memory is N, the number of passage
For amount equal to the quantity of nand flash memory, the quantity of the Physical Page of the nand flash memory is M, wherein, M and N are positive integers, M >=2, N
>=2, which is characterized in that including：
Judge the whether continuous request of request；
If the request is continuously to ask, judge whether the length L of the request is more than M*N；
If the length L of the request is more than M*N, more nand flash memories composition described in [L, M*N] secondary claim 1 or 2 is performed
Storage system in concurrent access method write the request；
As MOD (L, M*N) ≠ 0, remaining part after the repeating query concurrent access method write-in request execution previous step is utilized.
4. the access method in the storage system of more nand flash memory compositions according to claim 3, which is characterized in that work as institute
It is not when continuously asking to state request, and the request is write using repeating query concurrent access method.
5. the access method in the storage system of more nand flash memory compositions according to claim 3, which is characterized in that work as institute
When stating the length L of request less than M*N, the request is write using repeating query concurrent access method.
6. a kind of solid state disk, which is characterized in that in the storage system of application more nand flash memory compositions described in claim 1
Concurrent access method or power in the concurrent access method storage system that either more nand flash memories described in claim 2 form
Profit requires more NAND described in access method or claim 4 in the storage system that more nand flash memories described in 3 form to dodge
Deposit the visit in the storage system of more nand flash memories composition described in the access method or claim 5 in the storage system of composition
Ask method.
7. a kind of computer, which is characterized in that include the solid state disk described in claim 6.
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| CN111897766A (en) * | 2020-06-19 | 2020-11-06 | 西安微电子技术研究所 | Satellite-borne solid-state memory and data processing method capable of recording and erasing simultaneously |
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