CN108107673A - photoresist processing method - Google Patents
photoresist processing method Download PDFInfo
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- CN108107673A CN108107673A CN201711323254.7A CN201711323254A CN108107673A CN 108107673 A CN108107673 A CN 108107673A CN 201711323254 A CN201711323254 A CN 201711323254A CN 108107673 A CN108107673 A CN 108107673A
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- photoresist
- exposure
- mask plate
- energy
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The present invention provides a kind of photoresist processing method, the photoresist processing method includes：The first photoresist and the second photoresist are sequentially formed in semiconductor substrate surface, wherein second photoresist covers first photoresist；First time exposure-processed is carried out to first photoresist and second photoresist using the first mask plate, wherein being the first masked areas by the region of first mask plate covering；Second of exposure-processed is carried out to first photoresist using the second mask plate and by second photoresist, to form exposure open area at the first photoresist edge of first masked areas；Development treatment is carried out to first photoresist and second photoresist, forms the photoresist structure of inverted trapezoidal.
Description
【Technical field】
The present invention relates to semiconductor chip manufacturing technology fields, particularly, are related to a kind of photoresist processing method.
【Background technology】
Photoresist is widely applied to during semiconductor and micro-nano processing and manufacturing.Photoresist ion implanting,
Ion implanting or etching processing to some film layer of semiconductor devices can be realized in etching technics as shielded layer.Generally
For, it is necessary to which photoresist is carried out stripping removal after the completion of ion implanting or etching technics.
Common photoresist process technology mainly has following two：
The first：Single-layer lithography glue technology, mainly by using toluene etc., certain special solution impregnates photoresist surface, makes
Photoresist superficial layer is obtained in development, solubility reduces in developer solution, so as to form the photoresist pattern of inverted trapezoidal.For
Single-layer lithography adhesive process generally requires the complexity for by toluene equal solvent processing photoresist surface, adding technique, cost
It is high.Moreover, even if photoresist surface is after treatment, solution rate is slow in developer solution during development, but obtain
The pattern of inverted trapezoidal also is difficult to ensure, especially the inclined degree of inverted trapezoidal, can not be made big.And for the stripping work of photoresist
Skill generally requires the inclined degree of inverted trapezoidal to be the bigger the better.
Second：Double-tiered arch dam technology, mainly by levels photoresist, solution rate is different in developer solution,
Obtain the photoresist pattern of inverted trapezoidal.But, due to upper and lower two layers of photoresist, solution rate is different in developer solution, also can not
Ensure accuracy, can not ensure the inverted trapezoidal photoresist pattern at big inclination angle.
In view of this, it is necessary to a kind of photoresist processing method is provided, to solve the above problem existing in the prior art.
【The content of the invention】
One of purpose of the present invention is to provide a kind of photoresist processing method in order to solve the above problem.
Photoresist processing method provided by the invention, including：Semiconductor substrate surface sequentially form the first photoresist and
Second photoresist, wherein second photoresist covers first photoresist；Using the first mask plate to first photoetching
Glue and second photoresist carry out first time exposure-processed, wherein being the first mask by the region of first mask plate covering
Region；Second of exposure-processed is carried out to first photoresist using the second mask plate and by second photoresist, with
Exposure open area is formed at the first photoresist edge of first masked areas；To first photoresist and described second
Photoresist carries out development treatment, forms the photoresist structure of inverted trapezoidal.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, described
The first of one photoresist is aobvious to open second display energy of the energy less than second photoresist.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, described
First of the first exposure energy that single exposure processing uses more than first photoresist, which shows, opens energy and second photoetching
The second of glue is aobvious to open energy.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, described
The second exposure energy that re-expose processing uses is more than the first display energy of first photoresist, but less than described second
The second of photoresist is aobvious to open energy.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, described
In first time exposure-processed, first photoresist and second photoresist are not exposed by the first of first mask plate covering
Light region is all effectively exposed.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, described
In second of exposure-processed, first photoresist is in first exposure area not by the side of second mask plate covering
Edge point is effectively exposed and forms the exposure open area.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, described
In second of exposure-processed, second photoresist above the exposure open area can not be effectively exposed.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, described
The size of two mask plates is less than first mask plate, and in the center of second mask plate and first masked areas
The heart aligns.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, further include：
Based on the photoresist structure of the inverted trapezoidal, metal layer is formed in the semiconductor substrate surface.
As a kind of improvement in photoresist processing method provided by the invention, in an advantageous embodiment, further include：
Lift-off processing is carried out to the photoresist structure of the inverted trapezoidal, so that the semiconductor substrate surface forms metal pattern.
Compared to the prior art, photoresist processing method provided by the invention opens the different light of energy by using minimum show
Photoresist is repeatedly coated, then carries out the pattern progress of multiexposure, multiple exposure.Under being higher than due to the lowest exposure energy of upper strata photoresist
The lowest exposure energy of layer photoresist, therefore can be exposed to be formed in the edge domain of lower floor's photoresist by upper strata photoresist
Open area, so as to after developing formed inverted trapezoidal photoresist structure, and the open area of lower floor's photoresist completely by
The mask plate of exposure determines, so opening size can be made big, therefore the photoresist structure of inverted trapezoidal can have it is larger
Angle, convenient for subsequently carrying out photoresist lift off, and improve the precision of photoetching offset plate figure, reduce integral manufacturing cost.
【Description of the drawings】
To describe the technical solutions in the embodiments of the present invention more clearly, used in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure, wherein：
Fig. 1 is a kind of flow diagram of embodiment of photoresist processing method provided by the invention；
Fig. 2 is the structure diagram that the step S1 of photoresist processing method shown in FIG. 1 is obtained；
Fig. 3 is the structure diagram that the step S2 of photoresist processing method shown in FIG. 1 is obtained；
Fig. 4 is the structure diagram that the step S3 of photoresist processing method shown in FIG. 1 is obtained；
Fig. 5 is the structure diagram that the step S4 of photoresist processing method shown in FIG. 1 is obtained；
Fig. 6 is the structure diagram that the step S5 of photoresist processing method shown in FIG. 1 is obtained；
Fig. 7 is the structure diagram that the step S6 of photoresist processing method shown in FIG. 1 is obtained.
【Specific embodiment】
The technical solution in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example is only the part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
All other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects
It encloses.
Various existing for the photoresist stripping process of the prior art to solve the problems, such as, the present invention provides a kind of photoresist processing
Method, by using it is minimum it is aobvious open the different photoresist of energy and repeatedly coated, then carry out the pattern progress of multiexposure, multiple exposure.By
Energy is opened higher than minimum show of lower floor's photoresist in the minimum aobvious energy of opening of upper strata photoresist, therefore upper strata photoresist can be passed through
It is exposed to form open area in the edge domain of lower floor's photoresist, it is cementing so as to form the photoetching of inverted trapezoidal after developing
Structure, and the open area of lower floor's photoresist is determined completely by the mask plate exposed, so opening size can be made big, because
The photoresist structure of this inverted trapezoidal can have larger angle, convenient for subsequently carrying out photoresist lift off, and improve photoresist
The precision of figure reduces integral manufacturing cost.
Referring to Fig. 1, Fig. 1 is a kind of flow diagram of embodiment of photoresist processing method provided by the invention.Having
In body embodiment, photoresist processing method provided by the invention may be employed the different minimum aobvious photoresists for opening energy of multilayer and carry out
Multiexposure, multiple exposure forms the photoresist structure of inverted trapezoidal.But, for ease of description, the present embodiment is carried out by taking two layers of photoresist as an example
Illustrate, the photoresist processing method of the present embodiment can be expanded to answering for multilevel resist by person of ordinary skill in the field
With scene, the application is without limitation.Specifically, the photoresist processing method mainly includes the following steps that：
Step S1 sequentially forms the first photoresist and the second photoresist in semiconductor substrate surface, wherein second light
Photoresist covers first photoresist, and its minimum aobvious energy of opening is higher than first photoresist；
Referring to Fig. 2, the structure diagram that the step S1 that Fig. 2 is photoresist processing method shown in FIG. 1 is obtained, in step
In S1, a Semiconductor substrate is provided first, the Semiconductor substrate can be silicon substrate；Then, in the Semiconductor substrate
Surface coats the first photoresist (photoresist 1), then coats the second photoresist (photoresist 2) on the first photoresist surface.
Wherein, first photoresist has the first display ENERGY E 1, as shown in Fig. 2, first photoresist covers first light
Photoresist, and second photoresist has the second display ENERGY E 2, in the present embodiment, the described second aobvious ENERGY E 2 of opening is more than institute
State the first display ENERGY E 1, i.e. E2>E1.
Step S2 is carried out at first time exposure first photoresist and second photoresist using the first mask plate
Reason, wherein being the first masked areas by the region of first mask plate covering；
Referring to Fig. 3, the structure diagram that the step S2 that Fig. 3 is photoresist processing method shown in FIG. 1 is obtained, in step
In S2, first photoresist and second photoresist are carried out by first mask plate and using the first exposure energy
First time exposure-processed.Wherein, not by first mask plate covering in first photoresist and second photoresist
Region is the first exposure area, and is the first masked areas by the region of first mask plate covering.In the present embodiment, institute
It states the first exposure energy P1 ENERGY Es 1 and described second of opening aobvious more than described first and aobvious opens ENERGY E 2, i.e. P1>E2>E1.Therefore, institute
State the first photoresist and second photoresist be located at first exposure area part can in follow-up developing process quilt
Developer solution is got rid of.It can be seen that in this step, by selecting suitable first exposure energy P1, it can cause described
It is incomplete by the region (i.e. described first masked areas) of first mask plate covering in one photoresist and second photoresist
Portion is effectively exposed.
Step S3 using the second mask plate and passes through second photoresist to first photoresist progress, second of exposure
Light processing, to form exposure open area at the first photoresist edge of first masked areas；
Referring to Fig. 4, the structure diagram that the step S3 that Fig. 4 is photoresist processing method shown in FIG. 1 is obtained, step S3
Second of exposure-processed is carried out to first photoresist using the second mask plate for partly covering first masked areas,
Described in the size of the second mask plate be less than first mask plate, therefore in second of exposure process, not by
Second exposure area of the second mask plate covering is more than first exposure area.As a kind of preferred embodiment, institute
The center for stating the center and the predetermined pattern region of the second mask plate aligns, and first photoresist is described as a result,
The edge of one masked areas can be effectively exposed in second of exposure process.
It should be noted that in step s3, the second exposure energy P2 that second of exposure-processed uses is more than institute
State first it is aobvious open ENERGY E 1, but aobvious open ENERGY E 2, i.e. E1 less than described second<P2<E2.Therefore, the first photoresist middle position
It is effectively exposed in first masked areas and not by the marginal portion that second mask plate covers, so as to be formed at edge
Open area is exposed, the first photoresist of the exposure open area can be removed in subsequent developing process.And
During second of exposure-processed, since the second aobvious ENERGY E 1 of opening of second photoresist is more than the described second exposure
ENERGY E, therefore the second photoresist above the exposure open area can not be effectively exposed, in other words, the exposure
The second photoresist above open area can be retained in subsequent developing process.
Step S4 carries out development treatment to first photoresist and second photoresist, forms the photoetching of inverted trapezoidal
Plastic structure；
Referring to Fig. 5, the structure diagram that the step S4 that Fig. 5 is photoresist processing method shown in FIG. 1 is obtained, in step
In S4, will can in developer solution it develop by the device placement of above-mentioned first time exposure-processed and second of exposure-processed
Processing, in developing process, first photoresist and second photoresist can be in first exposure area part
Developed removal, also, first photoresist developed can also be gone in the exposure open area of first masked areas
Remove, so as to first photoresist formed with corresponding first photoetching offset plate figure of second mask plate, and described the
Two photoresists are formed and corresponding second photoetching offset plate figure of first mask plate, wherein the second photoetching offset plate figure size
More than first photoetching offset plate figure, therefore ladder is collectively formed down in second photoetching offset plate figure and first photoetching offset plate figure
The photoresist structure of shape.
It should be appreciated that in the present embodiment be described as an example with two layers of photoresist, the expansion as the present embodiment
Exhibition, in other embodiments can also by photoresist more than third layer and using it is suitable aobvious open energy and exposure energy into
The similar exposure-processed of row, to form the multilevel resist structure of inverted trapezoidal.
Based on the photoresist structure of the inverted trapezoidal, metal layer is formed in the semiconductor substrate surface by step S5；
In step s 5, referring to Fig. 6, the structure that the step S5 that Fig. 6 is photoresist processing method shown in FIG. 1 is obtained is shown
It is intended to, the photoresist structure based on the inverted trapezoidal can carry out metal layer growth, the gold in the semiconductor substrate surface
Belong to layer in addition to not by the semiconductor substrate surface of the photoresist structure of the inverted trapezoidal, can also be formed simultaneously described second
The surface of photoresist, but the exposure open area of first photoresist is due to being blocked and can not be formed by second photoresist
Metal layer, therefore the metal layer is discontinuous, and the metal layer of the semiconductor substrate surface will not be with described
One photoresist has adhesion.
Step S6 carries out lift-off processing, so that the semiconductor substrate surface shape to the photoresist structure of the inverted trapezoidal
Into metal pattern.
Referring to Fig. 7, the structure diagram that the step S7 that Fig. 7 is photoresist processing method shown in FIG. 1 is obtained, by right
The photoresist structure of the inverted trapezoidal is removed, and can remove the photoresist structure, so as to which first photoresist be connected
It is removed together with the second photoresist above it and metal layer.Since the edge of first photoresist has the exposure
Open area, thus the stripping of first photoresist will fairly simple convenience, and the photoresist structure remove after shape
Into metal pattern also have higher precision.
The main feature of the photoresist processing method provided below the application is summarized：
First, because the exposure open area of first photoresist is determined completely by second mask plate, institute
Stating the actual aperture size of exposure open area can be made big, this degree for allowing for the inverted trapezoidal of the photoresist structure can
To be made big, can be more convenient when subsequently carrying out the removal of photoresist；
Second, above-mentioned photoresist processing method and conventional chip production process line compatibility are very high, and toluene etc. is not required
Material；
3rd, in the above-described embodiments, first photoresist and second photoresist are using positive photoresist, therefore quilt
The region that development is fallen is determined by the transmission region of mask plate rather than completely by photoresist developing powder in developer solution in itself
It determines, so the resolution ratio higher of photoetching offset plate figure；
4th, the present embodiment can be extended to the photoresist structure of the big gradient of multilayer, although above-described embodiment is only listed
The situation of applied in two coats photoresist, can essentially coated with multiple layer photoresist, photoresist processing is carried out using similar principle.
Compared to the prior art, photoresist processing method provided by the invention opens the different light of energy by using minimum show
Photoresist is repeatedly coated, then carries out the pattern progress of multiexposure, multiple exposure.Under being higher than due to the lowest exposure energy of upper strata photoresist
The lowest exposure energy of layer photoresist, therefore can be exposed to be formed in the edge domain of lower floor's photoresist by upper strata photoresist
Open area, so as to after developing formed inverted trapezoidal photoresist structure, and the open area of lower floor's photoresist completely by
The mask plate of exposure determines, so opening size can be made big, therefore the photoresist structure of inverted trapezoidal can have it is larger
Angle, convenient for subsequently carrying out photoresist lift off, and improve the precision of photoetching offset plate figure, reduce integral manufacturing cost.
Above-described is only embodiments of the present invention, it should be noted here that for those of ordinary skill in the art
For, without departing from the concept of the premise of the invention, improvement can also be made, but these belong to the protection model of the present invention
It encloses.
Claims (10)
1. a kind of photoresist processing method, which is characterized in that including：
The first photoresist and the second photoresist are sequentially formed in semiconductor substrate surface, wherein described in second photoresist covering
First photoresist；
First time exposure-processed is carried out to first photoresist and second photoresist using the first mask plate, wherein by institute
The region for stating the covering of the first mask plate is the first masked areas；
Using the second mask plate and by second photoresist to first photoresist carry out second of exposure-processed, with
First photoresist edge of first masked areas forms exposure open area；
Development treatment is carried out to first photoresist and second photoresist, forms the photoresist structure of inverted trapezoidal.
2. according to the method described in claim 1, it is characterized in that, the first aobvious energy of opening of first photoresist is less than described
Second display energy of the second photoresist.
3. according to the method described in claim 2, it is characterized in that, the first exposure energy that the first time exposure-processed uses
First more than first photoresist aobvious open the second of energy and second photoresist and aobvious opens energy.
4. according to the method described in claim 3, it is characterized in that, the second exposure energy that second of exposure-processed uses
Energy is shown more than the first of first photoresist, but is shown less than the second of second photoresist and opens energy.
5. according to the method described in claim 1, it is characterized in that, in the first time exposure-processed, first photoetching
Glue and second photoresist are not all effectively exposed by the first exposure area that first mask plate covers.
6. according to the method described in claim 5, it is characterized in that, in second of exposure-processed, first photoetching
Glue is not effectively exposed by the marginal portion that second mask plate covers in first exposure area and forms the exposure
Light open area.
7. according to the method described in claim 6, it is characterized in that, in second of exposure-processed, positioned at the exposure
Second photoresist above open area can not be effectively exposed.
8. according to the method described in claim 6, it is characterized in that, the size of second mask plate is less than first mask
Plate, and the center of second mask plate and the center of first masked areas align.
9. method according to any one of claim 1 to 8, which is characterized in that further include：Light based on the inverted trapezoidal
Photoresist structure forms metal layer in the semiconductor substrate surface.
10. it according to the method described in claim 9, it is characterized in that, further includes：The photoresist structure of the inverted trapezoidal is carried out
Lift-off processing, so that the semiconductor substrate surface forms metal pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711323254.7A CN108107673A (en) | 2017-12-12 | 2017-12-12 | photoresist processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711323254.7A CN108107673A (en) | 2017-12-12 | 2017-12-12 | photoresist processing method |
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| CN108107673A true CN108107673A (en) | 2018-06-01 |
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| CN201711323254.7A Withdrawn CN108107673A (en) | 2017-12-12 | 2017-12-12 | photoresist processing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379707A (en) * | 2019-08-21 | 2019-10-25 | 无锡英菲感知技术有限公司 | A kind of lift-off structure of metal patternization and preparation method thereof |
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| CN105334699A (en) * | 2014-06-24 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Method for improving photoresist morphology through repetitive exposure |
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| CN101436540A (en) * | 2007-10-30 | 2009-05-20 | Wj通信公司 | Methods of minimizing etch undercut and providing clean metal liftoff |
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