CN108092655A - A kind of radio-frequency power single-pole double-throw switch circuit - Google Patents
A kind of radio-frequency power single-pole double-throw switch circuit Download PDFInfo
- Publication number
- CN108092655A CN108092655A CN201711198435.1A CN201711198435A CN108092655A CN 108092655 A CN108092655 A CN 108092655A CN 201711198435 A CN201711198435 A CN 201711198435A CN 108092655 A CN108092655 A CN 108092655A
- Authority
- CN
- China
- Prior art keywords
- resistance
- triode
- amplifier
- circuit
- opposite side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of radio-frequency power single-pole double-throw switch circuits, including power amplification circuit, filter circuit, regulator circuit and single-pole double-throw switch (SPDT) circuit, the power amplification circuit is connected with the filter circuit, the filter circuit is connected with the regulator circuit, the regulator circuit is connected with the single-pole double-throw switch (SPDT) circuit, wherein, the power amplification circuit includes IN, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, capacitance C1, triode Q1, triode Q2, amplifier A1, amplifier A2 and power supply.Advantageous effect:The present invention effectively meets the powerful operating condition of communication system, so as to be effectively guaranteed the normal work of circuit system, so as to be effectively improved its application convenience in mobile communication system compared to traditional single-pole double-throw switch (SPDT) circuit.
Description
Technical field
The present invention relates to microwave monolithic integrated circuit technical field, it particularly relates to a kind of radio-frequency power single-pole double throw
On-off circuit.
Background technology
In the microwave system of DC-2000MHz, particularly mobile communication system, power amplifier PA to antenna ANT and low noise
Acoustic amplifier LNA controls transmitting-receiving to switch to a power switch SW is usually required between antenna.In current microwave communication system
In, power switch is usually there are two types of form, and a kind of is the PIN diode using discrete silicon (si) material, using hybrid circuit
Mode complete, its main feature is that volume is big, working band is narrow, and control circuit is complicated.Another kind is counterfeit using GaAs (GaAs)
With high electron mobility transistor (PHEMT) single-chip switching, PHEMT switch have it is small, it is easy to use using bandwidth
Feature, but by power it is relatively small.With the continuous development of mobile communication system, to the performance of system, frequency bandwidth, collection
Cheng Du, volume, the requirement of cost is higher and higher, therefore the application of PHEMT switches is more and more extensive.The commercialization to communicate at present
PHEMT switch products, frequency coverage DC-6GHz, power is at 2GHz, P-1 power 10W.With some new communication systems
The development and exploitation of system, it is desirable to which power switch can handle the power more than 10W, GaAs (GaAs) PHEMT traditional at present
It can not be realized in switch monolithic performance.
The problem of in correlation technique, currently no effective solution has been proposed.
The content of the invention
The problem of in correlation technique, the present invention propose a kind of radio-frequency power single-pole double-throw switch circuit, existing to overcome
There is the above-mentioned technical problem present in correlation technique.
The technical proposal of the invention is realized in this way：
A kind of radio-frequency power single-pole double-throw switch circuit, including power amplification circuit, filter circuit, regulator circuit and hilted broadsword
Commutator circuit, the power amplification circuit are connected with the filter circuit, and the filter circuit connects with the regulator circuit
Connect, the regulator circuit is connected with the single-pole double-throw switch (SPDT) circuit, wherein, the power amplification circuit include IN, resistance R1,
Resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, capacitance C1, triode Q1, triode Q2, put
Big device A1, amplifier A2 and power supply, the first pin ground connection of the amplifier A1, the second pin of the amplifier A1 with it is described
The cathode connection of power supply, the 3rd pin of the amplifier A1 respectively with the one side of the resistance R2 and the one side of the resistance R1
Connection, the 4th pin of institute amplifier A1 respectively with the one side of the resistance R3, the one side of the resistance R4 and the amplifier
The 4th pin connection of A2, the 5th pin of the amplifier A1 respectively with the one side of the resistance R7 and the amplifier A1
6th pin connects, and the 7th pin of the amplifier A1 is connected with the one side of the resistance R8, the one side point of the resistance R8
Base stage not with the one side of the resistance R7 and the triode Q1 is connected, the opposite side of the resistance R7 respectively with the amplification
The 6th pin of device A1 is connected with the emitter of the triode Q1, and the emitter of the triode Q1 is with the resistance R7's
Anode of the opposite side with the power supply is connected, the collector of triode Q1 opposite side, the electricity with the resistance R2 respectively
The opposite side of resistance R3 is connected with the collector of the triode Q2, the first pin of the amplifier A2 respectively with the resistance R6
One side connected with the base stage of the triode Q2, the second pin of the amplifier A2 opposite side with the resistance R6 respectively
It is connected with the emitter of the triode Q2, and the opposite side of the emitter of the triode Q2 and the resistance R6 are and power supply
Cathode connection, the 3rd pin of the amplifier A2 connects respectively with the one side of the capacitance C1 and the one side of the resistance R1
It connects, the opposite side of the resistance R1 is connected with the IN, the 5th pin of the amplifier A2 anode with the power supply respectively
It is connected with the 6th pin of the amplifier A2, the 7th pin of the amplifier A2 is connected with the one side of the resistance R5, institute
The opposite side for stating resistance R5 is connected respectively with the opposite side of the resistance R4 and ground, and the opposite side of the resistance R4 with it is described
The opposite side connection of capacitance C1；The filter circuit includes resistance R9, resistance R10, resistance R11, capacitance C2, capacitance C3, benchmark
The first pin of voltage Uref and amplifier A3, the amplifier A3 respectively with the one side of the capacitance C3 and the resistance R11
One side connection, the second pin of the amplifier A3 is connected with the reference voltage Uref, and the 3rd of the amplifier A3 draws
Opposite side of the foot respectively with the one side of the resistance R10 and the capacitance C3 is connected, the opposite side of the resistance R10 respectively with institute
It states the one side of capacitance C2, the one side of resistance R9 to connect with the opposite side of the resistance R11, the opposite side ground connection of the capacitance C2；
The regulator circuit includes the base stage difference of resistance R12, resistance R13, triode Q3 and zener diode D, the triode Q3
It is connected with the one side of the resistance R12 and the cathode of the zener diode D, collector and the resistance of the triode Q3
The opposite side connection of R12, the emitter of the triode Q3 respectively with the one side of the resistance R13 and the zener diode D
The connection of reference pole, the opposite side of the resistance R13 is connected with the anode of the zener diode D；The single-pole double-throw switch (SPDT)
Circuit includes resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, triode Q4, triode Q5, triode Q6, base
Quasi- voltage Uref, OUT and power supply, the base stage of the triode Q4 respectively with the one side of the resistance R16 and the resistance R15
One side connects, and the opposite side of the emitter of the triode Q4 respectively with the anode of the power supply and the resistance R16 is connected, institute
The collector for stating triode Q4 connects respectively with the one side of the one side of resistance R13, the one side of the resistance R14 and the resistance R17
It connects, the opposite side of the resistance R13 is connected with the cathode of the power supply, the opposite side of the resistance R14 and the triode Q5
Base stage connection, the collector of the triode Q5 is connected with the reference voltage Uref, the emitter of the triode Q5 and
The emitter connection of the triode Q6, and the emitter of the emitter of the triode Q5 and the triode Q6 with it is described
OUT connections, the grounded collector of the triode Q6, the base stage of the triode Q6 are connected with the opposite side of the resistance R17.
Further, the power amplification circuit and the single-pole double-throw switch (SPDT) circuit respectively with baseband processing module and day
Line connects.
Further, the capacitance C1 is polar capacitor, and the capacitance of the capacitance C1 is 0.1uF.
Further, the model TL431 of the zener diode D.
Further, the model 2N6121 type triodes of the triode Q1 and triode Q2.
Further, the model of the triode Q4, the triode Q5 and the triode Q6 are respectively 2N3218 types
Triode, 2N2945 types triode and 2N2432 type triodes.
Beneficial effects of the present invention：By being provided with filter circuit, so that it can be gone clutter well
It removes, so that it can obtain desired wavelength signals, the unnecessary influence generated so as to efficiently avoid clutter to it；
By being provided with regulator circuit, so as to be effectively guaranteed the normal work of circuit, meanwhile, it efficiently avoids because of voltage instability
The influence determined and brought to circuit work；By being provided with power amplification circuit, so that it effectively meets communication system
It unites powerful operating condition, so as to be effectively guaranteed the normal work of system；The present invention is compared to traditional single-pole double throw
On-off circuit effectively meets the powerful operating condition of communication system, so as to be effectively guaranteed the normal of circuit system
Work, so as to be effectively improved its application convenience in mobile communication system.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of module diagram of radio-frequency power single-pole double-throw switch circuit according to embodiments of the present invention；
Fig. 2 is a kind of top half circuit signal of radio-frequency power single-pole double-throw switch circuit according to embodiments of the present invention
Figure；
Fig. 3 is a kind of the latter half circuit signal of radio-frequency power single-pole double-throw switch circuit according to embodiments of the present invention
Figure.
In figure：
1st, baseband processing module；2nd, power amplification circuit；3rd, filter circuit；4th, regulator circuit；5th, single-pole double-throw switch (SPDT) electricity
Road；6th, antenna.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art's all other embodiments obtained belong to what the present invention protected
Scope.
According to an embodiment of the invention, a kind of radio-frequency power single-pole double-throw switch circuit is provided.
As shown in Figs. 1-3, a kind of radio-frequency power single-pole double-throw switch circuit according to embodiments of the present invention, puts including power
Big circuit 2, filter circuit 3, regulator circuit 4 and single-pole double-throw switch (SPDT) circuit 5, the power amplification circuit 2 and the filtered electrical
Road 3 connects, and the filter circuit 3 is connected with the regulator circuit 4, the regulator circuit 4 and the single-pole double-throw switch (SPDT) circuit 5
Connection, wherein, the power amplification circuit 2 include IN, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6,
Resistance R7, resistance R8, capacitance C1, triode Q1, triode Q2, amplifier A1, amplifier A2 and power supply, the amplifier A1's
First pin is grounded, and the second pin of the amplifier A1 is connected with the cathode of the power supply, and the 3rd of the amplifier A1 draws
One side of the foot respectively with the one side of the resistance R2 and the resistance R1 is connected, the 4th pin of institute amplifier A1 respectively with it is described
The one side of resistance R3, the one side of the resistance R4 are connected with the 4th pin of the amplifier A2, and the 5th of the amplifier A1 the
Sixth pin of the pin respectively with the one side of the resistance R7 and the amplifier A1 is connected, the 7th pin of the amplifier A1
Be connected with the one side of the resistance R8, the one side of the resistance R8 respectively with the one side of the resistance R7 and the triode Q1
Base stage connects, the opposite side of the resistance R7 respectively with the 6th pin of the amplifier A1 and the emitter of the triode Q1
Connection, and the emitter of the triode Q1 is connected with anode of the opposite side of the resistance R7 with the power supply, described three
The collector of pole pipe Q1 connects respectively with the collector of the opposite side of the resistance R2, the opposite side of resistance R3 and the triode Q2
It connects, the base stage of the first pin of the amplifier A2 respectively with the one side of the resistance R6 and the triode Q2 is connected, described
Emitter of the second pin of amplifier A2 respectively with the opposite side of the resistance R6 and the triode Q2 is connected, and described three
The opposite side of the emitter of pole pipe Q2 and the resistance R6 are connected with the cathode of power supply, the 3rd pin point of the amplifier A2
One side not with the one side of the capacitance C1 and the resistance R1 is connected, and the opposite side of the resistance R1 is connected with the IN, institute
It states sixth pin of the 5th pin of amplifier A2 respectively with the anode of the power supply and the amplifier A2 to be connected, the amplification
The 7th pin of device A2 is connected with the one side of the resistance R5, and the opposite side of the resistance R5 is another with the resistance R4 respectively
Side is connected with ground, and the opposite side of the resistance R4 is connected with the opposite side of the capacitance C1；The filter circuit 3 includes electricity
Hinder R9, resistance R10, resistance R11, capacitance C2, capacitance C3, reference voltage Uref and amplifier A3, the first of the amplifier A3
One side of the pin respectively with the one side of the capacitance C3 and the resistance R11 is connected, the second pin of the amplifier A3 and institute
State reference voltage Uref connections, the 3rd pin of the amplifier A3 respectively with the one side of the resistance R10 and the capacitance C3
Opposite side connection, the opposite side of the resistance R10 respectively with the one side of the capacitance C2, the one side of resistance R9 and the resistance
The opposite side connection of R11, the opposite side ground connection of the capacitance C2；The regulator circuit 4 includes resistance R12, resistance R13, three poles
The base stage of pipe Q3 and zener diode D, the triode Q3 respectively with the one side of the resistance R12 and the zener diode D
Cathode connection, the collector of the triode Q3 is connected with the opposite side of the resistance R12, the emitter of the triode Q3
The reference pole with the one side of the resistance R13 and the zener diode D is connected respectively, the opposite side of the resistance R13 and institute
State the anode connection of zener diode D；The single-pole double-throw switch (SPDT) circuit 5 includes resistance R13, resistance R14, resistance R15, resistance
R16, resistance R17, triode Q4, triode Q5, triode Q6, reference voltage Uref, OUT and power supply, the triode Q4's
One side of the base stage respectively with the one side of the resistance R16 and the resistance R15 is connected, the emitter of the triode Q4 respectively with
The anode of the power supply is connected with the opposite side of the resistance R16, the collector of the triode Q4 respectively with resistance R13 one
Side, the one side of the resistance R14 are connected with the one side of the resistance R17, the opposite side of the resistance R13 and bearing for the power supply
Pole connects, and the opposite side of the resistance R14 is connected with the base stage of the triode Q5, the collector of the triode Q5 with it is described
Reference voltage Uref connections, the emitter of the triode Q5 is connected with the emitter of the triode Q6, and the triode
The emitter of the emitter of Q5 and the triode Q6 with the connection, the grounded collector of the triode Q6, described three
The base stage of pole pipe Q6 is connected with the opposite side of the resistance R17.
By means of above-mentioned technical proposal, by being provided with filter circuit 3, so that it can carry out clutter well
Removal, so that it can obtain desired wavelength signals, the unnecessary shadow generated so as to efficiently avoid clutter to it
It rings；By being provided with regulator circuit 4, so as to be effectively guaranteed the normal work of circuit, meanwhile, it efficiently avoids because of voltage
It is unstable and give the influence that brings of circuit work；By being provided with power amplification circuit 2 so that its effectively meet it is logical
The powerful operating condition of news system, so as to be effectively guaranteed the normal work of system；The present invention is compared to traditional hilted broadsword
Commutator circuit effectively meets the powerful operating condition of communication system, so as to be effectively guaranteed circuit system
Normal work, so as to be effectively improved its application convenience in mobile communication system.
In addition, the power amplification circuit 2 and the single-pole double-throw switch (SPDT) circuit 5 respectively with baseband processing module 1 and day
Line 6 connects, the capacitance C1 be polar capacitor, and the capacitance of the capacitance C1 be 0.1uF, the model of the zener diode D
For the model 2N6121 type triodes of TL431, the triode Q1 and the triode Q2, the triode Q4, described three
The model of pole pipe Q5 and the triode Q6 are respectively 2N3218 types triode, three pole of 2N2945 types triode and 2N2432 types
Pipe.
In conclusion by means of the above-mentioned technical proposal of the present invention, by being provided with filter circuit 3, so that it can
Clutter to be removed well, so that it can obtain desired wavelength signals, so as to efficiently avoid clutter
The unnecessary influence generated on it；By being provided with regulator circuit 4, so as to be effectively guaranteed the normal work of circuit, meanwhile,
Efficiently avoid the influence brought due to spread of voltage to circuit work；By being provided with power amplification circuit 2, so that
It obtains it and effectively meets the powerful operating condition of communication system, so as to be effectively guaranteed the normal work of system；This hair
It is bright effectively to meet the powerful operating condition of communication system compared to traditional single-pole double-throw switch (SPDT) circuit, so as to effectively
Ground ensure that the normal work of circuit system, so as to be effectively improved its application convenience in mobile communication system.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention god.
Claims (6)
1. a kind of radio-frequency power single-pole double-throw switch circuit, which is characterized in that including power amplification circuit (2), filter circuit
(3), regulator circuit (4) and single-pole double-throw switch (SPDT) circuit (5), the power amplification circuit (2) connect with the filter circuit (3)
It connects, the filter circuit (3) is connected with the regulator circuit (4), the regulator circuit (4) and the single-pole double-throw switch (SPDT) circuit
(5) connect, wherein, the power amplification circuit (2) includes IN, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, electricity
Hinder R6, resistance R7, resistance R8, capacitance C1, triode Q1, triode Q2, amplifier A1, amplifier A2 and power supply, the amplification
The first pin ground connection of device A1, the second pin of the amplifier A1 are connected with the cathode of the power supply, the amplifier A1's
One side of 3rd pin respectively with the one side of the resistance R2 and the resistance R1 is connected, the 4th pin difference of institute amplifier A1
It is connected with the 4th pin of the one side of the resistance R3, the one side of the resistance R4 and the amplifier A2, the amplifier A1
Sixth pin of the 5th pin respectively with the one side of the resistance R7 and the amplifier A1 be connected, the of the amplifier A1
Seven pins are connected with the one side of the resistance R8, the one side of the resistance R8 respectively with the one side of the resistance R7 and three pole
The base stage connection of pipe Q1, the opposite side of the resistance R7 respectively with the 6th pin of the amplifier A1 and the triode Q1
Emitter connects, and the emitter of the triode Q1 is connected with anode of the opposite side of the resistance R7 with the power supply,
The collector of the triode Q1 collection with the opposite side of the resistance R2, the opposite side of resistance R3 and the triode Q2 respectively
Electrode connects, and the first pin of the amplifier A2 connects respectively with the base stage of the one side of the resistance R6 and the triode Q2
It connecing, the emitter of the second pin of the amplifier A2 respectively with the opposite side of the resistance R6 and the triode Q2 is connected,
And the opposite side of the emitter of the triode Q2 and the resistance R6 are connected with the cathode of power supply, the of the amplifier A2
One side of three pins respectively with the one side of the capacitance C1 and the resistance R1 is connected, opposite side and the IN of the resistance R1
Connection, the 6th pin of the 5th pin of the amplifier A2 respectively with the anode of the power supply and the amplifier A2 are connected,
The 7th pin of the amplifier A2 is connected with the one side of the resistance R5, the opposite side of the resistance R5 respectively with the resistance
The opposite side of R4 is connected with ground, and the opposite side of the resistance R4 is connected with the opposite side of the capacitance C1；The filtered electrical
Road (3) includes resistance R9, resistance R10, resistance R11, capacitance C2, capacitance C3, reference voltage Uref and amplifier A3, the amplification
One side of the first pin of device A3 respectively with the one side of the capacitance C3 and the resistance R11 is connected, and the of the amplifier A3
Two pins are connected with the reference voltage Uref, the 3rd pin of the amplifier A3 respectively with the one side of the resistance R10 and
The opposite side connection of the capacitance C3, the opposite side of the resistance R10 respectively with the one side of the capacitance C2, the one side of resistance R9
It is connected with the opposite side of the resistance R11, the opposite side ground connection of the capacitance C2；The regulator circuit (4) include resistance R12,
The base stage of resistance R13, triode Q3 and zener diode D, the triode Q3 respectively with the one side of the resistance R12 and described
The cathode connection of zener diode D, the collector of the triode Q3 are connected with the opposite side of the resistance R12, three pole
Reference pole of the emitter of pipe Q3 respectively with the one side of the resistance R13 and the zener diode D is connected, the resistance R13
Opposite side be connected with the anode of the zener diode D；The single-pole double-throw switch (SPDT) circuit (5) includes resistance R13, resistance
R14, resistance R15, resistance R16, resistance R17, triode Q4, triode Q5, triode Q6, reference voltage Uref, OUT and electricity
Source, the one side of the base stage of the triode Q4 respectively with the one side of the resistance R16 and the resistance R15 are connected, three pole
Opposite side of the emitter of pipe Q4 respectively with the anode of the power supply and the resistance R16 is connected, the current collection of the triode Q4
One side of the pole respectively with the one side of resistance R13, the one side of the resistance R14 and the resistance R17 is connected, the resistance R13's
Opposite side is connected with the cathode of the power supply, and the opposite side of the resistance R14 is connected with the base stage of the triode Q5, and described three
The collector of pole pipe Q5 is connected with the reference voltage Uref, the transmitting of the emitter of the triode Q5 and the triode Q6
Pole connects, and the emitter of the triode Q5 is connected with the emitter of the triode Q6 with the OUT, the triode
The grounded collector of Q6, the base stage of the triode Q6 are connected with the opposite side of the resistance R17.
A kind of 2. radio-frequency power single-pole double-throw switch circuit according to claim 1, which is characterized in that the power amplification
Circuit (2) and the single-pole double-throw switch (SPDT) circuit (5) are connected respectively with baseband processing module (1) and antenna (6).
3. a kind of radio-frequency power single-pole double-throw switch circuit according to claim 1, which is characterized in that the capacitance C1 is
Polar capacitor, and the capacitance of the capacitance C1 is 0.1uF.
A kind of 4. radio-frequency power single-pole double-throw switch circuit according to claim 1, which is characterized in that two pole of voltage stabilizing
The model TL431 of pipe D.
A kind of 5. radio-frequency power single-pole double-throw switch circuit according to claim 1, which is characterized in that the triode Q1
With the model 2N6121 type triodes of the triode Q2.
A kind of 6. radio-frequency power single-pole double-throw switch circuit according to claim 1, which is characterized in that the triode
The model of Q4, the triode Q5 and the triode Q6 be respectively 2N3218 types triode, 2N2945 types triode and
2N2432 type triodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711198435.1A CN108092655A (en) | 2017-11-25 | 2017-11-25 | A kind of radio-frequency power single-pole double-throw switch circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711198435.1A CN108092655A (en) | 2017-11-25 | 2017-11-25 | A kind of radio-frequency power single-pole double-throw switch circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108092655A true CN108092655A (en) | 2018-05-29 |
Family
ID=62173012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711198435.1A Pending CN108092655A (en) | 2017-11-25 | 2017-11-25 | A kind of radio-frequency power single-pole double-throw switch circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108092655A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020017931A1 (en) * | 1999-06-21 | 2002-02-14 | Petr Kadanka | Rail-to-rail driver for use in a regulator, and method |
| CN101795463A (en) * | 2010-02-09 | 2010-08-04 | 工业和信息化部电信传输研究所 | Method and system for analyzing WLAN authentication and privacy infrastructure protocol |
| US20120119834A1 (en) * | 2009-10-29 | 2012-05-17 | Novatek Microelectronics Corp. | Amplifier circuit with overshoot suppression |
| CN203071878U (en) * | 2013-03-08 | 2013-07-17 | 滁州学院 | Wideband direct-current amplifier based on voltage-controlled operational amplifier |
| CN104426525A (en) * | 2013-08-22 | 2015-03-18 | 联发科技股份有限公司 | Signal generation apparatus |
| CN107394903A (en) * | 2017-08-17 | 2017-11-24 | 华昕通源创新科技有限公司 | A kind of straight ripple wireless charging system |
-
2017
- 2017-11-25 CN CN201711198435.1A patent/CN108092655A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020017931A1 (en) * | 1999-06-21 | 2002-02-14 | Petr Kadanka | Rail-to-rail driver for use in a regulator, and method |
| US20120119834A1 (en) * | 2009-10-29 | 2012-05-17 | Novatek Microelectronics Corp. | Amplifier circuit with overshoot suppression |
| CN101795463A (en) * | 2010-02-09 | 2010-08-04 | 工业和信息化部电信传输研究所 | Method and system for analyzing WLAN authentication and privacy infrastructure protocol |
| CN203071878U (en) * | 2013-03-08 | 2013-07-17 | 滁州学院 | Wideband direct-current amplifier based on voltage-controlled operational amplifier |
| CN104426525A (en) * | 2013-08-22 | 2015-03-18 | 联发科技股份有限公司 | Signal generation apparatus |
| CN107394903A (en) * | 2017-08-17 | 2017-11-24 | 华昕通源创新科技有限公司 | A kind of straight ripple wireless charging system |
Non-Patent Citations (4)
| Title |
|---|
| 横井与次郎: "《线性集成电路实用电路手册》", 31 January 1984, 国防工业出版社 * |
| 田良: "《综合电子设计与实践》", 31 March 2002, 东南大学出版社 * |
| 郝会新: "《模拟与数字电路基础》", 30 June 1992, 高等教育出版社 * |
| 钱艾文: "《电子电路集》", 30 June 1990, 人民邮电出版社 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104969479B (en) | The RF front-end modules of LNA bypass mode insertion loss are reduced using single-pole three-throw switch | |
| CN105049015B (en) | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more | |
| CN108063627A (en) | Radio-frequency receiving-transmitting switchs | |
| KR102177542B1 (en) | Radio frequency switch circuit | |
| CN105049016B (en) | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more | |
| CN106533494B (en) | A kind of microwave converter and its microwave frequency changer circuit | |
| CN100361398C (en) | Impedance matching circuit for a multi-band radio frequency device | |
| CN108736866A (en) | A kind of CMOS SOI radio-frequency switch circuits | |
| JP2014204170A (en) | Power amplifier and communication device | |
| CN104485907A (en) | High-efficiency multimode radio frequency power amplifier | |
| CN111262045B (en) | Compact rectifying antenna with wide dynamic input power range | |
| CN108809262A (en) | A kind of restructural low power consumption and low cost supports the receiver front end of multi-frequency multi-mode | |
| US20170026072A1 (en) | Radio frequency switching system | |
| CN112886976B (en) | Antenna sharing circuit and terminal | |
| CN108092655A (en) | A kind of radio-frequency power single-pole double-throw switch circuit | |
| CN106027077B (en) | The radio frequency front-end device that integrated carrier wave polymerize and the mobile terminal comprising it | |
| CN104518812A (en) | Mobile terminal switching antenna and switching method thereof | |
| CN109167605A (en) | RF front end structure and mobile terminal | |
| CN110445471A (en) | A kind of restructural radio-frequency power amplifier of two waveband and its control method | |
| CN210273975U (en) | Control circuit and low noise amplifier | |
| CN104935316A (en) | Radio frequency switch used for controlling sending and receiving path switching, radio frequency system and operation method | |
| CN207283507U (en) | A kind of radio-frequency power amplifier output circuit with gain-adjusted | |
| CN208174663U (en) | Communication apparatus signal transmission circuit and communication apparatus | |
| CN106911358A (en) | A kind of wireless transceiver system | |
| CN110611486A (en) | Control circuit and low noise amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180529 |