CN108092491A - Electric power management circuit applied to GCT device gate-drives - Google Patents
Electric power management circuit applied to GCT device gate-drives Download PDFInfo
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- CN108092491A CN108092491A CN201810002287.XA CN201810002287A CN108092491A CN 108092491 A CN108092491 A CN 108092491A CN 201810002287 A CN201810002287 A CN 201810002287A CN 108092491 A CN108092491 A CN 108092491A
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- 230000005611 electricity Effects 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000004891 communication Methods 0.000 claims abstract description 11
- 238000012544 monitoring process Methods 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 230000002159 abnormal effect Effects 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
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- Engineering & Computer Science (AREA)
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- Power Conversion In General (AREA)
Abstract
A kind of electric power management circuit applied to GCT device gate-drives, including the first power module, shut-off module for GCT devices is opened the modules such as module, monitoring and communication module and is powered；Second source module is managed for the power supply in the electrifying startup and power process to GCT devices；For providing the stand-by power supply of the first power module of upper and lower adjacent level GCT devices, isolation power supply is carried out to adjacent GCT devices for 3rd power module.This electric power management circuit meet GCT gate-drives unit from GCT devices high-pressure side main circuit directly take electricity the needs of, without carrying out high_voltage isolation power supply to the gate-drive unit of GCT from low potential, greatly reduce device volume and cost, a variety of stand-by power supply modes are provided, improve reliability.Increase powers on, the power supply management strategy of power process, the voltage breakdown during effectively preventing.
Description
Technical field
The invention belongs to technical field of electric power, are related to power electronic devices, more particularly to a kind of to be applied to GCT device doors
The electric power management circuit of pole driving.
Background technology
Door pole stream-exchanging thyristor GCT (Gate Commutated Thyristor) device is as a kind of high power semi-conductor
Switching device using gate commutated turn-off technique as characteristic, has thyristor (SCR) and gate level turn-off thyristor (GTO) low pass concurrently
The advantages that dynamic and static state turn-off performance that state pressure drop and IGBT stablize.
The existing gate-drive applied to GCT devices (such as IGCT, ETO), as shown in Figure 1, its circuit module mainly wraps
It includes electric power management circuit module, open module, shut-off module, monitoring and communication module etc..Exist in the shut-off module of GCT devices
The recharged capacitance group of tens mF, in the off case, gate pole, the cathode of the capacitance group and GCT are connected in parallel, and make gate pole, the moon
Voltage across poles keeps reverse bias, so as to ensure that the anode of GCT, cathode can be resistant to specified DC voltage or transient voltage.
If gate pole, cathode voltage are unsatisfactory for certain reverse bias condition, then the withstanding voltage of GCT and voltage change ratio cannot
Reach rated insulation voltage value.Electric power management circuit is tens mF capacitance groups of shut-off module, opens module, monitoring and communication module etc.
It is powered.
The electrifying startup process of GCT gate-drives needs capacitance group charging to predetermined voltage threshold (such as 20V).Due to electricity
Power management circuits charge power is limited, and the existing typical gate-drive electrifying startup processes of GCT generally require 3-5 seconds.It is charging
It should ensure that GCT is off state in the process, and high voltage or voltage change ratio cannot be applied between anode, cathode, otherwise
GCT over-voltage breakdowns may be caused to damage.Therefore, it is necessary to first completion GCT gate-drive power up, then will in the application of GCT
Apply high-voltage electricity between anode, cathode.Correspondingly, it should can just disconnect after voltage drops to certain value between anode, cathode
GCT gate-drive power supplys.This also just determines that the gate-drive of GCT cannot be from directly taking electricity between anode, cathode, but needs
Using other electric power loops of low potential, high_voltage isolation power supply is carried out to GCT gate-drives unit.
In addition, existing power supply manage circuit under conditions of, once external power supply break down, gate-drive will immediately without
Method works normally, and the system that GCT is applied is caused to break down.
The electric power management circuit of this gate-drive of the prior art seriously limits the application of GCT, especially in high pressure
Field with the raising of voltage class, is continuously improved the isolation voltage grade of GCT gate-drives unit power supply, greatly increases
Add the cost of device volume and power supply, reduce reliability.
The content of the invention
The defects of solving prior art and deficiency, the present invention propose a kind of gate-drive applied to GCT devices
Novel electric power management circuits.
Technical solution is as follows：
A kind of electric power management circuit applied to GCT device gate-drives connects external power supply, including：
First power module is the shut-off module of the GCT devices gate-drive, opens module and monitoring and communication module
It is powered；
Second source module, the first power module described in electric coupling, for the electrifying startup to the GCT devices and power-off
Power supply in the process is managed, and first power module is carried out using the anode of the GCT devices, cathode voltage
Stand-by power supply；
The first and second power module electric coupling external power supply, the external power supply supply for first and second power module
Electricity.
Further comprise the 3rd power module, the first power module of the upper and lower adjacent level GCT devices of electric coupling, for carrying
For the stand-by power supply of the first power module of upper and lower adjacent level GCT devices, spare isolation is carried out to the adjacent GCT devices and is supplied
Electricity；3rd power module described in the first power module electric coupling is powered for the 3rd power module.
Wherein, the second source module, for the breaking circuit module in the GCT devices power up capacitance not
When completing to charge, certain reverse bias voltage is provided between the gate poles of the GCT devices, cathode or by the GCT devices
Gate pole, cathode short circuit.
Wherein, the second source module, for the capacitance electricity of the breaking circuit module in the GCT devices power process
Press it is relatively low in the case of, certain reverse bias voltage is provided between the gate poles of the GCT devices, cathode or by the GCT devices
The gate pole of part, cathode short circuit.
Wherein, power in GCT devices, power off, in course of normal operation, utilized by the second source module described in
Anode, the cathode voltage of GCT devices are powered for first power module, are closed the external power supply, are reduced external power supply
Power supply.
Wherein, in the 3rd power module exception of the external power supply abnormal electrical power supply and adjacent level GCT devices, described
The positive and negative voltage across poles of two power modules from the GCT devices takes electricity, is to open module, pass by first power module
Disconnected module is powered.
Wherein, in the external power supply abnormal electrical power supply and second source module exception, the of the adjacent level GCT devices
Three power modules are powered by first power module to open module, turning off module.
Reverse bias voltage threshold value is equal to or less than described the between gate pole that wherein the second source module provides, cathode
The predetermined voltage threshold of one power module, and in the GCT devices power up, when the GCT device anodes, cathode voltage
When rising to low voltage, reverse bias voltage threshold value between the default gate pole of second source module, cathode is charged to rapidly.Wherein
Reverse bias voltage between gate pole that the second source module provides, cathode, maintains anode, cathode until the GCT devices
Between voltage be down to below security value (s).
Wherein described second source module is in the GCT devices power up, when the GCT device anodes, cathode electricity
When pressure rises to low voltage, rapidly by gate pole, cathode short circuit.
Wherein described second source module maintains the gate pole of the GCT devices, cathode short circuit, until the GCT devices
Voltage between anode, cathode is down to below security value (s).
Itself status information with external power supply can be fed back to monitoring and communication by first, second and third power module
Module；The monitoring and communication module report the status information to superior system.
Wherein described GCT devices and gate-drive, collectively form IGCT devices or ETO devices.
Using above-mentioned technical proposal, the beneficial effects of the present invention are：
1) meet GCT gate-drives unit from GCT devices high-pressure side main circuit directly take electricity the needs of, without from
Low potential carries out high_voltage isolation power supply to the gate-drive unit of GCT, greatly reduces device volume and cost, improves reliable
Property；
2) a variety of stand-by power supply modes are provided, enhance reliability；
3) increase power on, the power supply management strategy of power process, the voltage breakdown during effectively preventing.
Description of the drawings
Fig. 1 prior arts are applied to the electric power management circuit of the gate-drive of GCT devices
Fig. 2 present invention is applied to the embodiment of the Novel electric power management circuits of the gate-drive of GCT devices.
Specific embodiment
With reference to technical scheme and the attached drawing specific embodiment that the present invention is further explained.
The Novel electric power management circuits of the gate-drive applied to GCT devices of the present invention, as shown in Fig. 2, including first
Power module, in course of normal operation, tens mF capacitance groups for the shut-off module of GCT devices open module, monitoring and communication
The modules such as module are powered；Second source module, the first power module of electric coupling, for the electrifying startup to GCT devices and
Power supply in power process is managed, and using the anode of the GCT devices, cathode voltage to first power module
Carry out stand-by power supply.The capacitance that second source module is mainly used for the breaking circuit module in GCT device power up does not complete
During charging, certain reverse bias voltage or gate pole, the moon by the GCT devices are provided between the gate pole, cathode for GCT devices
Extremely short road；It is the GCT devices in the case that the capacitance voltage of breaking circuit module is relatively low in the GCT devices power process
Certain reverse bias voltage is provided between the gate pole of part, cathode or by the gate pole of the GCT devices, cathode short circuit.Wherein, exist
GCT devices are powered on, powered off, in course of normal operation, and anode, the cathode voltage of GCT devices are utilized by second source module
It powers for the first power module, closes the external power supply, external power supply power supply is reduced, so as to ensure that GCT devices are resistant to
Specified direct current and transient voltage and voltage change ratio.
Further comprise the 3rd power module, the first power module of the upper and lower adjacent level GCT devices of electric coupling, for carrying
For the stand-by power supply of the first power module of upper and lower adjacent level GCT devices, spare isolation is carried out to adjacent GCT devices and is powered；The
The 3rd power module of one power module electric coupling is powered for the 3rd power module.
In addition, when the 3rd power module exception of external power supply abnormal electrical power supply and adjacent level GCT devices, the second electricity of this grade
Source module can also take electricity between GCT positive and negative pole tensions, by the first power module for open module, shut-off module carry out it is short
When power, the error protection for GCT institutes application system provides buffer time.
Wherein, in external power supply abnormal electrical power supply and second source module exception, the 3rd power supply mould of adjacent level GCT devices
Block is powered by the first power module of this grade to open module, turning off module.
As shown in Fig. 2, each power module is connected as corresponding construction parts power supply by a dotted line；Monitoring and communication module pass through
Dotted line connection is monitored to opening the monitored control modules such as module, shut-off module, the 3rd power module；Wherein first and second,
Itself status information with external power supply can be fed back to monitoring and communication module by three power modules；The monitoring and communication
Module reports these status informations to superior system；Module, shut-off module, second source module etc. is opened by solid line respectively to connect
Connect the gate pole and cathode of GCT devices.
Wherein, reverse bias voltage threshold value is equal to or less than the first power supply between the gate pole of second source module offer, cathode
The predetermined voltage threshold of module, and in the GCT devices power up, when GCT device anodes, cathode voltage rise to it is relatively low
During voltage, reverse bias voltage threshold value between the default gate pole of second source module, cathode is charged to rapidly.
Reverse bias voltage wherein between the gate pole of second source module offer, cathode, maintains the sun until the GCT devices
Voltage between pole, cathode is down to below security value (s).
Wherein second source module is in the GCT devices power up, when on the GCT device anodes, cathode voltage
When rising to low voltage, rapidly by gate pole, cathode short circuit.Second source module maintains gate pole, the cathode of the GCT devices short
Road, until the voltage between the anode of the GCT devices, cathode is down to below security value (s).
The electric power management circuit of the present invention, in order to improve confession of the electric power management circuit of the present invention in High Voltage Cascade application
Electric reliability prevents from causing to drive power down, each son of the invention due to power module failure of certain level-one for driving unit power supply
The power management module of module, while as the stand-by power supply of front and rear two adjacent submodules, adjacent submodule is carried out every
From power supply.
In conclusion the electric power management circuit of the gate-drive using the present invention applied to GCT devices, advantage exist
In：
1) meet GCT gate-drives unit from GCT devices high-pressure side main circuit directly take electricity the needs of, without from
Low potential carries out high_voltage isolation power supply to the gate-drive unit of GCT, greatly reduces device volume and cost, improves reliable
Property；
2) a variety of stand-by power supply modes are provided, enhance reliability；
3) increase power on, the power supply management strategy of power process, the voltage breakdown during effectively preventing.
Although according to above embodiment described the present invention, person of ordinary skill in the field is it should be understood that can be with
In the spirit and scope of the appended claims the present invention is realized by changing.All such changes and modifications, which are intended to, falls into institute
In the range of attached claim.Therefore, example and attached drawing are considered to be illustrative rather than restrictive.
Claims (10)
1. a kind of electric power management circuit applied to GCT device gate-drives connects external power supply, it is characterised in that：
Including：
First power module is the shut-off module of the GCT devices gate-drive, open module and monitoring is carried out with communication module
Power supply；
Second source module, the first power module described in electric coupling, for the electrifying startup and power process to the GCT devices
In power supply be managed, and using the anode of the GCT devices, cathode voltage to first power module carry out it is spare
Power supply；
The first and second power module electric coupling external power supply, the external power supply are powered for first and second power module.
2. electric power management circuit as described in claim 1 further comprises the 3rd power module, the 3rd power module electricity
The first power module of upper and lower adjacent level GCT devices is coupled, for providing the first power module of upper and lower adjacent level GCT devices
Stand-by power supply, spare isolation is carried out to the adjacent GCT devices and is powered；3rd electricity described in the first power module electric coupling
Source module is powered for the 3rd power module.
3. electric power management circuit as claimed in claim 2, wherein, in the external power supply abnormal electrical power supply and adjacent level GCT devices
During the 3rd power module exception of part, the positive and negative voltage across poles of the second source module from the GCT devices takes electricity, passes through
First power module is opens module, shut-off module is powered.
4. electric power management circuit as described in claim 1, wherein, the second source module, in the GCT devices
When the capacitance of breaking circuit module does not complete charging in electric process, provided between the gate poles of the GCT devices, cathode certain anti-
It is to bias voltage or the gate pole of the GCT devices, cathode is short-circuit.
5. electric power management circuit as described in claim 1, wherein, the second source module, for breaking in the GCT devices
In the case that the capacitance voltage of breaking circuit module is relatively low in electric process, provided between the gate pole, cathode for the GCT devices certain
Reverse bias voltage or by the gate pole of the GCT devices, cathode short circuit.
6. electric power management circuit as claimed in claim 4, wherein the door for the GCT devices that the second source module provides
Reverse bias voltage threshold value is equal to or less than the predetermined voltage threshold of first power module between pole, cathode, and in the GCT
In device power up, when the GCT device anodes, cathode voltage rise to low voltage, described is charged to rapidly
Reverse bias voltage threshold value between the default gate pole of two power modules, cathode；The GCT devices that the second source module provides
Gate pole, reverse bias voltage between cathode, maintain until the voltage between the anodes of the GCT devices, cathode is down to security value (s)
Below.
7. electric power management circuit as described in claim 1, wherein the second source module is in the GCT devices power up
In, when anode, the cathode voltage of the GCT devices rise to low voltage, rapidly by gate pole, the moon of the GCT devices
Extremely short road；The second source module maintains the gate pole of the GCT devices, cathode short circuit, until the anode of the GCT devices,
Voltage between cathode is down to below security value (s).
8. electric power management circuit as described in claim 1, wherein powering in the GCT devices, powering off, course of normal operation
In, it is supplied by the second source module using anode, the cathode voltage of the GCT devices for first power module
Electricity closes the external power supply, reduces external power supply power supply.
9. electric power management circuit as claimed in claim 2, wherein, in the external power supply abnormal electrical power supply and second source module
When abnormal, the 3rd power module of the adjacent level GCT devices is to open module, shut-off mould by first power module
Block is powered.
10. electric power management circuit as claimed in any one of claims 1-9 wherein, wherein the GCT devices are IGCT devices or ETO
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810002287.XA CN108092491B (en) | 2018-01-02 | 2018-01-02 | Power management circuit applied to GCT device gate electrode drive |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810002287.XA CN108092491B (en) | 2018-01-02 | 2018-01-02 | Power management circuit applied to GCT device gate electrode drive |
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| Publication Number | Publication Date |
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| CN108092491A true CN108092491A (en) | 2018-05-29 |
| CN108092491B CN108092491B (en) | 2024-03-12 |
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|---|---|---|---|
| CN201810002287.XA Active CN108092491B (en) | 2018-01-02 | 2018-01-02 | Power management circuit applied to GCT device gate electrode drive |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108718193A (en) * | 2018-07-25 | 2018-10-30 | 清华大学 | A kind of Drive Protecting Circuit and its control method of power semiconductor |
| CN112803373A (en) * | 2020-12-14 | 2021-05-14 | 株洲中车时代半导体有限公司 | Power semiconductor device protection circuit, control method, storage medium, and apparatus |
| CN113497545A (en) * | 2020-04-08 | 2021-10-12 | 南京南瑞继保工程技术有限公司 | IGCT driving device, IGCT module, electronic equipment and control method |
| CN114726357A (en) * | 2022-05-17 | 2022-07-08 | 清华大学 | Driving circuit of turn-off thyristor and control method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108718193A (en) * | 2018-07-25 | 2018-10-30 | 清华大学 | A kind of Drive Protecting Circuit and its control method of power semiconductor |
| CN113497545A (en) * | 2020-04-08 | 2021-10-12 | 南京南瑞继保工程技术有限公司 | IGCT driving device, IGCT module, electronic equipment and control method |
| CN112803373A (en) * | 2020-12-14 | 2021-05-14 | 株洲中车时代半导体有限公司 | Power semiconductor device protection circuit, control method, storage medium, and apparatus |
| CN112803373B (en) * | 2020-12-14 | 2024-05-07 | 株洲中车时代半导体有限公司 | Power semiconductor device protection circuit, control method, storage medium, and apparatus |
| CN114726357A (en) * | 2022-05-17 | 2022-07-08 | 清华大学 | Driving circuit of turn-off thyristor and control method |
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|---|---|
| CN108092491B (en) | 2024-03-12 |
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