CN108091982B - Micro-nano film magnetosonic antenna - Google Patents
Micro-nano film magnetosonic antenna Download PDFInfo
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- CN108091982B CN108091982B CN201711462035.7A CN201711462035A CN108091982B CN 108091982 B CN108091982 B CN 108091982B CN 201711462035 A CN201711462035 A CN 201711462035A CN 108091982 B CN108091982 B CN 108091982B
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- 239000002120 nanofilm Substances 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 111
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009422 external insulation Methods 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005690 magnetoelectric effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
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- 238000000527 sonication Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/80—Constructional details
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of micro-nano film magnetosonic antennas, including pedestal, cavity is offered in the middle part of base upper surface, in cavity bottom and side wall and base upper surface is equipped with the insulating layer being linked together, it is equipped with supporting layer on base upper surface insulating layer, is suspended on cavity in the middle part of supporting layer；The sound-electric coupled structure of magnetic-being made of magnetostrictive thin film and thin film bulk acoustic wave resonator is equipped on supporting layer, the sound-electric coupled structure of magnetic-is located at right above cavity.The magnetostrictive thin film every is made of multilayer magnetostrictive thin film layer with multi-buffering-layer, and the number of plies of magnetostrictive thin film layer and the number of plies of buffer layer are identical and be spaced setting.The present invention keeps antenna to have than traditional electric antenna better performance while realizing miniaturization.
Description
Technical field
The present invention relates to the prioritization schemes of antenna miniaturization, especially antenna multiphase heterostructure design, to enhance day
The magneto-electric coupled effect of line improves antenna gain and efficiency.
Background technique
Traditional antenna is essential component in any radio transceiver system, and function is radiation and receives from certainly
By the radio magnetic wave in space.In emission system, the effect of antenna is to convert high-frequency current to propagate in free space
Electromagnetic wave；And in emission system, the effect of antenna is that the electromagnetic wave from free space that will be received switchs to high-frequency electrical
Stream.It generally uses metal wire structure.Metal antenna is by keeping certain length (greater than 1/10 wavelength of resonance frequency)
The coupling between rf signal and radiation field at the resonant frequency fx is realized, to effectively emit or receive electromagnetic wave.
The gain of antenna is superimposed by oscillator and is generated, and gain is higher, and antenna length is longer.
In recent years, with the fast development that communication electronic equipment minimizes, most of electronic components have all realized microminiature
Change, and traditional antenna is limited by prior art working principle (only reaching corresponding size could a large amount of electromagnetic radiation outward
Wave), although size can be done smaller, bandwidth, gain and efficiency can be sacrificed, the technology for being usually used in antenna miniaturization is all difficult
With the progress of making a breakthrough property.Especially under the frequency that P ~ S-band etc. has big wavelength (0.1 meter ~ 10 meters), realize that antenna is small
Type and array have very big challenge, this seriously limits the miniature of the equipments such as wireless communication system and radar
Change process.
Summary of the invention
In view of the above shortcomings of the prior art, it is an object of the invention to propose a kind of micro-nano film magnetosonic antenna,
Antenna is kept to have than traditional electric antenna better performance while realizing miniaturization.
To achieve the above object, The technical solution adopted by the invention is as follows:
Micro-nano film magnetosonic antenna, including pedestal, offer cavity, in cavity bottom and side wall in the middle part of base upper surface
Upper and base upper surface is equipped with the insulating layer being linked together, and is equipped with supporting layer on base upper surface insulating layer, in supporting layer
Portion is suspended on cavity；It is sound-electric that the magnetic-being made of magnetostrictive thin film and thin film bulk acoustic wave resonator is equipped on supporting layer
Coupled structure, the sound-electric coupled structure of magnetic-are located at right above cavity.
The upper and lower surface of thin film bulk acoustic wave resonator in the sound-electric coupled structure of magnetic-is respectively equipped with top electrode and bottom
Electrode, magnetostrictive thin film be two, be located on top electrode and hearth electrode under, magnetostrictive thin film and branch under hearth electrode
Support layer connection.
The upper and lower surface of thin film bulk acoustic wave resonator in the sound-electric coupled structure of magnetic-is respectively equipped with top electrode and bottom
Electrode, magnetostrictive thin film are one, are located on top electrode or under hearth electrode；If be located under hearth electrode, under hearth electrode
Magnetostrictive thin film connect with supporting layer.
Magnetostrictive thin film in the sound-electric coupled structure of magnetic-is two, is located at thin film bulk acoustic wave resonator
To constitute top electrode and hearth electrode, the magnetostrictive thin film for constituting hearth electrode is connect upper and lower surface with supporting layer.
Magnetostrictive thin film in the sound-electric coupled structure of magnetic-is one, positioned at the upper table of thin film bulk acoustic wave resonator
Face or lower surface, if constituting hearth electrode, constitute the magnetostrictive thin film of hearth electrode to constitute top electrode or hearth electrode
It is connect with supporting layer.
The magnetostrictive thin film every is made of multilayer magnetostrictive thin film layer with multi-buffering-layer, magnetostrictive thin film
The number of plies of layer is identical as the number of plies of buffer layer and is spaced setting.
Every layer of magnetostrictive thin film layer combined by the magnetostriction materials of two layers or two layers or more multilayer performance complement and
At to enhance magnetosonic stiffness of coupling.
The magnetostrictive thin film layer is combined by nickel layer and alloy-layer FeGaB upper layer and lower layer, or by nickel layer and conjunction
Layer gold FeCuNbSiB upper layer and lower layer are combined.
Every layer of magnetostrictive thin film layer is by intermediate magnetostrictive thin film layer and is located at intermediate magnetostrictive thin film layer two
The end magnetostrictive thin film layer at end is constituted, intermediate magnetostrictive thin film layer and end magnetostrictive thin film layer property difference, from
And the enhanced heterojunction structure of magnetostriction for obtaining a kind of symmetrical structure is to enhance magnetic flux, the magnetostrictive thin film of both ends of them
Structure is identical with property.
Micro-nano film magnetosonic antenna manufacture craft, it is characterised in that: steps are as follows,
1) silicon substrate is cleaned, etches the cavity for needing size on a silicon substrate using reactive ion etching process；
2) with oxidation furnace, surface, cavity bottom and four walls aoxidize one layer of SiO on a silicon substrate2Insulating layer；
3) in the surface of insulating layer sacrificial layer of CVD technology growing polycrystalline silicon, cavity is filled up, is then retaining insulation
Chemical mechanical polishing method flattened surface is used on the basis of layer, only the sacrificial layer in remaining cavity, outside sacrificial layer upper surface and cavity
Insulating layer upper surface is in same level；
4) the flattened surface grown silicon nitride supporting layer obtained in step 3)；
5) hearth electrode (Mo or W) for then making antenna sputters one layer of AlN piezoelectric layer of growth on hearth electrode surface, is pressing
Electric layer surface prepares top electrode (Mo or W or Ta), PAD layers needed for then performing etching to piezoelectric layer and make circuit, sputtering
Magnetostrictive thin film layer, magnetostriction layer pattern needed for etching or corrode out using litho machine and mask plate, and etch corrosion
Window needed for sacrificial layer；
6) sacrificial layer is finally released by window using reactive ion etching technology, forms cavity, to obtain described
Micro-nano film magnetosonic antenna；
If to obtain magnetostrictive thin film layer between hearth electrode and supporting layer, after step 4), using coating machine, photoetching
Magnetostrictive thin film layer needed for machine and mask plate first make on supporting layer, then carries out step 5) again；
If magnetostrictive thin film reduces corresponding electrode and forms work directly as the electrode of thin film bulk acoustic wave resonator
Skill.
Compared with prior art, the invention has the following beneficial effects:
Micro-nano film magnetosonic antenna of the present invention is compound based on piezoelectric material and magnetostriction materials when receiving signal
" product effect " after electromagnetic signal is converted to acoustical signal using magnetosonic-acoustic-electric conversion, realizes that signal connects by sound wave resonance
It receives, otherwise realizes the transmitting of electromagnetic signal.Since the antenna bulk acoustic resonance frequency is identical as the wave frequency of transmitting-receiving, and
Under same frequency, the velocity of sound about 5 orders of magnitude smaller than electromagnetic wave, therefore antenna size can foreshorten to micron dimension, be the current same sex
The 1/10 ~ 1/100 of the electric antenna size of energy, solves the contradictory problems for being difficult to reconcile between traditional antenna size and performance.Micro-nano
Film magnetosonic antenna breaches the bottleneck that the prior art is difficult to realize miniaturization, greatly meets Novel electronic devices and equipment to height
The urgent need of performance miniaturized antenna.
Magnetic electric compound material is applied to antenna miniaturization techniques field by the present invention, utilizes magnetoelectric material magnetic-sound-electric coupling
The energy conversion machine of " product effect " is produced for the energy conversion machine system transmitting-receiving electricity between traditional antenna AC field and electromagnetic field
Magnetostatic wave signal opens new developing direction to domestic antenna miniaturization techniques.
Detailed description of the invention
Fig. 1 is magnetoelectricity antenna structure view of the present invention.
Fig. 2 is the heterojunction structure schematic diagram for enhancing magnetosonic stiffness of coupling.
Fig. 3 is one schematic diagram of heterojunction structure for enhancing magneto-electric coupled intensity.
Fig. 4 is two schematic diagram of heterojunction structure for enhancing magneto-electric coupled intensity.
Specific embodiment
In order to realize that purpose is miniaturized in antenna, micro-nano film magnetosonic antenna of the present invention is by magnetostrictive thin film and thin-film body sound
Wave resonator composition, the magneto-electric coupled mechanism generated based on piezoelectric material in composite material and magnetostriction materials " product effect "
Realize that electromagnetic wave signal sends and receivees.When the antenna receives signal, magnetostrictive thin film is magnetized by alternating electromagnetism wave, generates one
A sonication stress generates a voltage output in the stress transfer to piezoelectric material.On the contrary, in signal transmission process,
Thin film bulk acoustic wave resonator generates an oscillation bulk acoustic wave, the sound wave stress transfer to magnetostriction material under alternating voltage effect
Flexible oscillation occurs on material, generates the magnetic flux of variation and then external radiated electromagnetic wave, to realize that signal is sent.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail.
It referring to Fig. 1, can be seen from the chart, micro-nano film magnetosonic antenna of the present invention, including pedestal 1, in 1 upper surface of pedestal
Middle part offers cavity 2, and in 2 bottom and side wall of cavity and 1 upper surface of pedestal is equipped with the insulating layer 3 being linked together, pedestal 1
Lower surface also is provided with a layer insulating 3.It is equipped with supporting layer 4 on 1 upper surface insulating layer 3 of pedestal, is suspended in the middle part of supporting layer 4
On cavity 2；It is equipped with that the magnetic-that is made of magnetostrictive thin film 5 with thin film bulk acoustic wave resonator 6 is sound-electric to be coupled on supporting layer 4
Structure, the sound-electric coupled structure of magnetic-are located at right above cavity.Utilize magnetostrictive thin film and piezoelectricity in the sound-electric coupled structure of magnetic-
The magnetoelectric effect that film " product effect " generates realizes that signal sends and receivees.
The pedestal 1 is silicon materials composition.Silicon materials are High Resistivity Si, and cavity 2 therein is formed using etching.Select high resistant
Silicon materials are at low cost as pedestal, are easily integrated.
Magnetostrictive thin film 5 is thin film bulk acoustic wave resonator top electrode 7 and 8 both sides of hearth electrode be perhaps unilateral or mangneto
Self-adhering film directly makees the electrode of thin film bulk acoustic wave resonator.Specifically there are following several situations.
1, the upper and lower surface of the thin film bulk acoustic wave resonator in the sound-electric coupled structure of the magnetic-is respectively equipped with 7 and of top electrode
Hearth electrode 8, magnetostrictive thin film 5 are two, are located on top electrode 7 under hearth electrode 8, the magnetostriction under hearth electrode is thin
Film 5 is connect with supporting layer 4.That is structure shown in Fig. 1.
2, the upper and lower surface of the thin film bulk acoustic wave resonator in the sound-electric coupled structure of the magnetic-be respectively equipped with top electrode and
Hearth electrode, magnetostrictive thin film only have one, are located on top electrode or under hearth electrode；If be located under hearth electrode, bottom electricity
Magnetostrictive thin film under extremely is connect with supporting layer.
3, the magnetostrictive thin film in the sound-electric coupled structure of the magnetic-is two, is located at thin film bulk acoustic wave resonator
Upper and lower surface to constitute top electrode and hearth electrode, the magnetostrictive thin film for constituting hearth electrode is directly connect with supporting layer.
4, the magnetostrictive thin film in the sound-electric coupled structure of the magnetic-only has one, positioned at thin film bulk acoustic wave resonator
Upper surface or lower surface, if constituting hearth electrode, constitute the magnetostriction of hearth electrode to constitute top electrode or hearth electrode
Film is directly connect with supporting layer.
The magnetostrictive thin film every is made of multilayer magnetostrictive thin film layer with multi-buffering-layer, magnetostrictive thin film
The number of plies of layer is identical as the number of plies of buffer layer and interleaved is arranged.Usual buffer layer is the Al of 5nm thickness2O3Layer, such as [FeGaB
(45nm)/Al2O3(5nm)] × 10 layers, i.e. FeGaB and Al2O3It is all ten layers.The film that buffer layer is added has better c-axis
Preferred orientation, the surfacing of film, crystalline quality make moderate progress, and to enhance magnetostrictive thin film high-frequency soft magnetic characteristic, reduce
Eddy-current loss.When processing, lowest level buffer layer is first sputtered, magnetostrictive thin film layer is grown on its surface, then sputters buffering again
Layer, then magnetostrictive thin film layer and buffer layer alternating sputtering are pressed, until completing one layer of magnetostrictive thin film layer topmost.
Every layer of magnetostrictive thin film layer combined by the magnetostriction materials of two layers or two layers or more multilayer performance complement and
At to enhance magnetosonic stiffness of coupling.
In addition, every layer of magnetostrictive thin film layer is by two layers or two layers or more multilayer in order to enhance magnetosonic stiffness of coupling
Magnetostriction materials that can be complementary are composed, to obtain a kind of enhanced heterojunction structure of magnetosonic coupling.It specifically, will be traditional
Negative magnetostriction, low magnetic permeability, low saturation magnetic field strength materials nickel (Ni) and direct magnetostriction material, high magnetic permeability, high saturation
Magnetic field strength material press magnetic alloy FeGaB(or FeCuNbSiB) up and down be combined into new magnetostrictive thin film material FeGaB/Ni(or
FeCuNbSiB/Ni), structure is shown in Fig. 2, and wherein nickel layer is upper or lower.The dynamic piezomagnetic coefficient of Ni becomes with bias magnetic field
Change curve and an extreme point is presented, that is, has an optimal bias magnetic field.But, FeGaB/Ni(or FeCuNbSiB/Ni different from Ni)
Compound magnetic MATERIALS ' DYNAMIC piezomagnetic coefficient can obtain big dynamic piezomagnetic coefficient under zero offset magnetic field: when longitudinal resonance, FeGaB/
Ni(or FeCuNbSiB/Ni) piezomagnetic coefficient under zero offset magnetic field is Ni ~ 12.22 times.New magnetostrictive layer and piezoelectricity are thin
Film layer has bigger magnetic flux using the heterojunction structure of optimization.
Further, in order to enhance magneto-electric coupled intensity, the present invention by a kind of magnetostrictive thin film both ends respectively with it is another
Kind heterogeneity magnetostriction both ends combine, thus a kind of enhanced heterojunction structure of the magnetostriction for obtaining symmetrical structure, specifically
Structure can be both ends docking mode described in Fig. 3 or overlapping mode up and down shown in Fig. 4.The magnetostriction of both ends of them is thin
Membrane structure is identical with property.
The present invention uses the miniaturized antenna of completely new signal transmitting and receiving mechanism, by magnetostrictive thin film material and film bulk acoustic
Resonator composition, is based on the strong magneto-electric coupled effect under magnetoelectric composite structure resonance state between electromagnetic wave and bulk acoustic wave, in sound wave
The transmitting and reception of electromagnetic wave are realized under frequency.Bulk acoustic wave in magnetoelectricity antenna can excite soft magnetic film that mangneto oscillation occurs, into
And give off electromagnetic wave；Conversely, the antenna can directly perceive electromagnetic wave magnetic field, and export a piezoelectric voltage.Therefore, the day
Line work under its sound wave resonance frequency rather than EMR electromagnetic resonance frequency.Since under same frequency, the velocity of sound is smaller than electromagnetic wave
About 5 orders of magnitude, the antenna size based on the sound-electric coupling principle work of magnetic-can foreshorten to micron dimension, be same performance electricity antenna
The 1/10 ~ 1/100 of size.
Micro-nano film magnetosonic antenna manufacture craft of the present invention is (by taking unilateral magnetostrictive thin film as an example):
1) silicon substrate is cleaned, etches the cavity for needing size on a silicon substrate using reactive ion etching process；
2) with oxidation furnace, surface, cavity bottom and four walls aoxidize one layer of SiO on a silicon substrate2Insulating layer；
3) in the surface of insulating layer sacrificial layer of CVD technology growing polycrystalline silicon, cavity is filled up, is then retaining insulation
Chemical mechanical polishing method flattened surface is used on the basis of layer, only the sacrificial layer in remaining cavity, outside sacrificial layer upper surface and cavity
Insulating layer upper surface is in same level；
4) the flattened surface grown silicon nitride supporting layer obtained in step 3)；
5) hearth electrode (Mo or W) for then making antenna sputters one layer of AlN piezoelectric layer of growth on hearth electrode surface, is pressing
Electric layer surface prepares top electrode (Mo or W or Ta), PAD layers needed for then performing etching to piezoelectric layer and make circuit, sputtering
Magnetostrictive thin film layer, magnetostriction layer pattern needed for etching or corrode out using litho machine and mask plate, and etch corrosion
Window needed for sacrificial layer；
6) sacrificial layer is finally released by window using reactive ion etching technology, forms cavity, to obtain described
Micro-nano film magnetosonic antenna；
If to obtain magnetostrictive thin film layer between hearth electrode and supporting layer, after step 4), using coating machine, photoetching
Magnetostrictive thin film layer needed for machine and mask plate first make on supporting layer, then carries out step 5) again；
If magnetostrictive thin film reduces corresponding electrode and forms work directly as the electrode of thin film bulk acoustic wave resonator
Skill.
The above embodiment of the present invention is only example to illustrate the invention, and is not to implementation of the invention
The restriction of mode.For those of ordinary skill in the art, other can also be made not on the basis of the above description
With the variation and variation of form.Here all embodiments can not be exhaustive.It is all to belong to technical solution of the present invention
Changes and variations that derived from are still in the scope of protection of the present invention.
Claims (9)
1. micro-nano film magnetosonic antenna, it is characterised in that: including pedestal, cavity is offered in the middle part of base upper surface, in cavity
In bottom and side wall and base upper surface is equipped with the insulating layer being linked together, and support is equipped on base upper surface insulating layer
Layer, supporting layer middle part are suspended on cavity；It is equipped on supporting layer by magnetostrictive thin film and thin film bulk acoustic wave resonator structure
At the sound-electric coupled structure of magnetic-, the sound-electric coupled structure of magnetic-is located at right above cavity；
The upper and lower surface of thin film bulk acoustic wave resonator in the sound-electric coupled structure of magnetic-is respectively equipped with top electrode and hearth electrode,
Magnetostrictive thin film be two, be located on top electrode and hearth electrode under, magnetostrictive thin film and supporting layer under hearth electrode
Connection.
2. micro-nano film magnetosonic antenna, it is characterised in that: including pedestal, cavity is offered in the middle part of base upper surface, in cavity
In bottom and side wall and base upper surface is equipped with the insulating layer being linked together, and support is equipped on base upper surface insulating layer
Layer, supporting layer middle part are suspended on cavity；It is equipped on supporting layer by magnetostrictive thin film and thin film bulk acoustic wave resonator structure
At the sound-electric coupled structure of magnetic-, the sound-electric coupled structure of magnetic-is located at right above cavity；
The upper and lower surface of thin film bulk acoustic wave resonator in the sound-electric coupled structure of magnetic-is respectively equipped with top electrode and hearth electrode,
Magnetostrictive thin film is one, is located on top electrode or under hearth electrode；If be located under hearth electrode, the mangneto under hearth electrode
Self-adhering film is connect with supporting layer.
3. micro-nano film magnetosonic antenna, it is characterised in that: including pedestal, cavity is offered in the middle part of base upper surface, in cavity
In bottom and side wall and base upper surface is equipped with the insulating layer being linked together, and support is equipped on base upper surface insulating layer
Layer, supporting layer middle part are suspended on cavity；It is equipped on supporting layer by magnetostrictive thin film and thin film bulk acoustic wave resonator structure
At the sound-electric coupled structure of magnetic-, the sound-electric coupled structure of magnetic-is located at right above cavity；
Magnetostrictive thin film in the sound-electric coupled structure of magnetic-is two, is located at the upper and lower of thin film bulk acoustic wave resonator
To constitute top electrode and hearth electrode, the magnetostrictive thin film for constituting hearth electrode is connect with supporting layer on surface.
4. micro-nano film magnetosonic antenna, it is characterised in that: including pedestal, cavity is offered in the middle part of base upper surface, in cavity
In bottom and side wall and base upper surface is equipped with the insulating layer being linked together, and support is equipped on base upper surface insulating layer
Layer, supporting layer middle part are suspended on cavity；It is equipped on supporting layer by magnetostrictive thin film and thin film bulk acoustic wave resonator structure
At the sound-electric coupled structure of magnetic-, the sound-electric coupled structure of magnetic-is located at right above cavity；
Magnetostrictive thin film in the sound-electric coupled structure of magnetic-is one, positioned at thin film bulk acoustic wave resonator upper surface or
Person lower surface, if constituting hearth electrode, constitutes the magnetostrictive thin film and branch of hearth electrode to constitute top electrode or hearth electrode
Support layer connection.
5. micro-nano film magnetosonic antenna according to claim 1 to 4, it is characterised in that: the magnetostrictive thin film is every
It opens and is made of multilayer magnetostrictive thin film layer with multi-buffering-layer, the number of plies of magnetostrictive thin film layer and the number of plies of buffer layer are identical
And it is spaced setting.
6. micro-nano film magnetosonic antenna according to claim 5, it is characterised in that: every layer of magnetostrictive thin film layer is by two layers
Or the magnetostriction materials of two layers or more multilayer performance complement are composed, to enhance magnetosonic stiffness of coupling.
7. micro-nano film magnetosonic antenna according to claim 6, it is characterised in that: the magnetostrictive thin film layer is by nickel layer
It is combined with alloy-layer FeGaB upper layer and lower layer, or is combined by nickel layer and alloy-layer FeCuNbSiB upper layer and lower layer.
8. micro-nano film magnetosonic antenna according to claim 5, it is characterised in that: every layer of magnetostrictive thin film layer is by centre
Magnetostrictive thin film layer and the end magnetostrictive thin film layer for being located at intermediate magnetostrictive thin film layer both ends are constituted, intermediate magnetic
Self-adhering film layer and end magnetostrictive thin film layer property difference are caused, so that the magnetostriction for obtaining a kind of symmetrical structure is enhanced
For heterojunction structure to enhance magnetic flux, the magnetostrictive thin film structure of both ends of them is identical with property.
9. any micro-nano film magnetosonic antenna manufacture craft of claim 1-4, it is characterised in that: steps are as follows,
1) silicon substrate is cleaned, etches the cavity for needing size on a silicon substrate using reactive ion etching process；
2) silicon substrate upper surface, cavity bottom and four walls are used in and aoxidize a layer insulating；
3) sacrificial layer is grown in surface of insulating layer, cavity is filled up, then chemical machinery on the basis of retaining insulating layer
Polishing processes flattened surface, the sacrificial layer being only left in cavity, sacrificial layer upper surface are in same with cavity external insulation layer upper surface
Horizontal plane；
4) supporting layer is grown in the flattened surface that step 3) obtains；
5) hearth electrode for then making antenna sputters growth piezoelectric layer on hearth electrode surface, prepares top electrode in piezoelectric layer surface,
Then PAD layers needed for performing etching to piezoelectric layer and make circuit, magnetostrictive thin film layer is sputtered, using litho machine and exposure mask
Magnetostriction layer pattern needed for carving is lost or corroded out, and window needed for etching corrosion sacrificial layer；
6) sacrificial layer is finally released by window using reactive ion etching technology, cavity is formed, to obtain the micro-nano
Film magnetosonic antenna；
If to obtain magnetostrictive thin film layer between hearth electrode and supporting layer, after step 4), using coating machine, litho machine with
Magnetostrictive thin film layer, then carries out step 5) again needed for mask plate first makes on supporting layer；
If magnetostrictive thin film reduces corresponding electrode formation process i.e. directly as the electrode of thin film bulk acoustic wave resonator
It can.
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| CN108879071B (en) * | 2018-07-03 | 2019-12-06 | 西安电子科技大学 | magnetoelectric antenna based on magnetostrictive piezoelectric material and preparation method thereof |
| CN109103582A (en) * | 2018-08-29 | 2018-12-28 | 河海大学常州校区 | The nano-machine acoustic antennas and manufacturing method of film bulk acoustic resonator structure |
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| CN115000683B (en) * | 2022-05-20 | 2023-09-26 | 安徽安努奇科技有限公司 | Hybrid antenna |
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