CN108091589A - 基板处理装置及基板处理方法 - Google Patents
基板处理装置及基板处理方法 Download PDFInfo
- Publication number
- CN108091589A CN108091589A CN201710611245.1A CN201710611245A CN108091589A CN 108091589 A CN108091589 A CN 108091589A CN 201710611245 A CN201710611245 A CN 201710611245A CN 108091589 A CN108091589 A CN 108091589A
- Authority
- CN
- China
- Prior art keywords
- substrate
- locking cavity
- chamber
- load locking
- cover board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 286
- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 238000012545 processing Methods 0.000 claims abstract description 62
- 238000012546 transfer Methods 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 18
- 230000005540 biological transmission Effects 0.000 claims description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 16
- 230000005284 excitation Effects 0.000 description 9
- 239000007921 spray Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000018199 S phase Effects 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 oxygen radical Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Robotics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
本发明提供一种基板处理装置及基板处理方法,本发明的基板处理装置包括:设备前端模块(EFEM),其具有装载端口和索引机器人;工艺腔室;传送腔室,其具有用于相对于所述工艺腔室搬入或搬出基板的传送机器人;以及装载锁定腔室,其位于所述传送腔室与所述设备前端模块(EFEM)之间,且具有用于支撑基板的基板支撑单元和用于支撑覆盖所述基板的外周的盖板的盖板支撑单元。
Description
技术领域
本发明涉及一种基板处理装置以及基板处理方法。
背景技术
为了制造半导体装置或液晶显示器,可在基板上执行各种工艺,例如蚀刻工艺、灰化工艺和清洗工艺。ICP源、远程电浆源等被用作电浆源。
使用集群类型(cluster type)的装置来执行上述工艺。在集群类型的装置中,装载锁定腔室和工艺腔室被布置在传送腔室的周围。
在传送腔室中,用于传送芯片的传送单元提供在装载锁定腔室和工艺腔室之间,或在工艺腔室中的一个和工艺腔室中的另一个之间。
发明内容
本发明的一实施例提供一种基板处理装置以及用于有效处理基板的基板处理方法。
本发明的一实施例提供一种基板处理装置以及用于在基板的外周被覆盖时处理基板的基板处理方法。
本发明构思的示例性实施例可提供一种基板处理装置,包括:设备前端模块EFEM,其具有装载端口和索引机器人;工艺腔室;传送腔室,其具有用于相对于所述工艺腔室搬入或搬出基板的传送机器人;以及装载锁定腔室,其位于所述传送腔室与所述设备前端模块EFEM之间,且具有用于支撑基板的基板支撑单元和用于支撑覆盖所述基板的外周的盖板的盖板支撑单元。
在示例性实施例中,所述基板支撑单元可包括用于支撑所述基板的底表面的第一基板支撑单元。
在示例性实施例中,所述基板支撑单元可包括用于支撑所述基板的外周的第二基板支撑单元。
在示例性实施例中,所述盖板支撑单元位于所述基板支撑单元的外侧。
在示例性实施例中,所述盖板支撑单元可被定位成使得其顶端比所述基板支撑单元的顶端更高出一预定长度。
示例性实施例可进一步包括推动器,所述推动器位于所述基板支撑单元的外侧,且能够沿设置在所述基板支撑单元中的基板的侧向移动。
在示例性实施例中,可提供多个推动器以相对于基板彼此面对。
在示例性实施例中,可提供多个工艺腔室,且所述装载锁定腔室可具有多个传送区域,其中每个传送区域具有基板支撑单元和盖板支撑单元。
在示例性实施例中,每个传送区域可提供基板从设备前端模块EFEM被搬入到传送腔室的搬入路径,以及将基板从传送腔室搬出到设备前端模块EFEM的搬出路经。
在示例性实施例中,传送区域的数量大于工艺腔室的数量。
在示例性实施例中,工艺腔室可通过电浆执行工艺处理。
本发明构思的其他实施例可提供一种基板处理方法,包括:将未处理的基板搬入到装载锁定腔室;将盖板设置在所述装载锁定腔室内的基板的外周上;搬出所述未处理的基板,其中所述盖板从所述装载锁定腔室被设置到传送腔室;以及搬入所述未处理的基板,其中所述盖板被设置到工艺腔室。
在示例性实施例中,设置所述盖板可包括:当所述未处理的基板位于被设置在所述装载锁定腔室中的所述盖板下方时,垂直地排列所述未处理的基板;以及沿所述盖板方向升高所述未处理的基板。
在示例性实施例中,设置在所述装载锁定腔室中的所述盖板可被提供为设置在盖板支撑单元中,所述盖板支撑单元被设置在用于在所述装载锁定腔室中支撑所述基板的基板支撑单元的外侧。
在示例性实施例中,将所述未处理的基板搬入到所述装载锁定腔室可借由设备前端模块EFEM的索引机器人来进行;且设置所述盖板及从所述装载锁定腔室搬出所述未处理的基板可借由所述传送腔室的传送机器人来进行。
在示例性实施例中,所述工艺腔室可使用电浆处理所述基板。
本发明构思的示例性实施例可提供一种基板处理方法,包括:将未处理的基板从传送腔室搬入到装载锁定腔室,及将盖板设置在所述基板的外周上;将所述盖板设置到所述装载锁定腔室的内部空间;将经处理的基板设置在被设置于所述装载锁定腔室中的基板支撑单元中;以及将所述基板搬出到设备前端模块EFEM。
在示例性实施例中,将所述盖板设置到所述装载锁定腔室的内侧可包括:将所述经处理的基板设置到被设置在所述装载锁定腔室中的盖板支撑单元的上侧;以及将所述经处理的基板向下移动。
在示例性实施例中,将所述基板搬出到所述设备前端模块EFEM可借由设置在所述设备前端模块EFEM中的索引机器人来进行;以及将所述基板搬入到所述装载锁定腔室并将所述基板设置在所述支撑单元中可借由设置在所述传送腔室中的传送机器人来进行。
本发明构思的实施例可提供一种基板处理装置以及用于有效处理基板的基板处理方法。
本发明构思的实施例可提供一种基板处理装置以及用于在基板的周围被覆盖时处理基板的基板处理方法。
附图说明
图1是根据实施例的基板处理装置的平面图。
图2是装载锁定腔室的视图。
图3是可提供在图1的工艺腔室中的电浆模块的视图。
图4是在搬入基板之前的装载锁定腔室的视图。
图5是示出在EFEM中将基板搬入装载锁定腔室的状态的视图。
图6是示出改变基板的位置的推动器的视图。
图7是将盖板设置在基板中的视图。
图8是示出其中传送机器人将基板搬入到工艺腔室的状态的视图。
图9是示出其中基板被设置在基座的状态的视图。
附图标记的说明
1:基板处理装置;4:载体;6:支撑件;10:装载端口;11:第一方向;12:第二方向;20:设备前端模块(EFEM);21:传送框架;25:索引机器人;27:传送轨道;30:工艺处理单元;40:装载锁定腔室;41a、41b:传送区域;50:传送腔室;53:传送机器人;60:工艺腔室;70:控制器;100:壳体;110:基板支撑单元(第一基板支撑单元);120:基板支撑单元(第二基板支撑单元);121:支撑槽;130:盖板支撑单元;140:推动器;150:盖板;151:接收槽;152:槽;2100:腔室;2110:主体;2111:通气孔;2112:排气线;2120:密封盖;2121:扩展空间;2210:偏置功率;2200:基座;2220:加热构件;2230:升降销;2300:喷淋头;2310:分配孔;2400:电浆激发单元;2410:振荡器;2420:波导;2430:介电波导;2440:工艺气体供给单元;S:基板
具体实施方式
以下将参照附图更详细地描述实施例。然而,实施例可采用不同的形式,并且不应被认为限于本文所述的特定实施例。相反地,提供这些实施例使得本发明将是彻底且完整的,并且将对本案所属技术领域中具有通常知识的人员充分传达该范围。在附图中,为了清楚起见而夸大了形状。
图1是根据实施例的基板处理装置的平面图。
参照图1,基板处理装置1包括设备前端模块EFEM 20、工艺处理腔室30以及控制器70。EFEM 20和工艺处理腔室30沿着一个方向串联布置。在下文中,将EFEM20和工艺处理腔室30布置的方向称作为第一方向11,及将从顶部观看时垂直于该第一方向11的方向称作为第二方向12。
EFEM 20包括装载端口10和传送框架21。装载端口10沿着第一方向11布置在EFEM20的前面。装载端口10具有多个支撑件6。每个支撑件6沿着第二方向12串联布置,且一基板将被提供于一工艺中并设置一载体4(例如,晶舟、FOUP等)。载体4储存有经处理的基板W。在载体4中,存储将在工艺中提供的基板W和完成处理的基板W。传送框架21布置在装载端口10和工艺处理腔室30之间。传送框架21被设置在其中,且包括用于在装载端口10和工艺处理腔室30之间传送基板W的索引机器人25。索引机器人25沿着传送轨道27移动,该传送轨道27沿着第二方向12设置,且在载体4和工艺处理腔室30之间传送基板W。
工艺处理腔室30包括装载锁定腔室40、传送腔室50和工艺腔室60。
装载锁定腔室40和传送框架21相邻地设置。在一实例中,装载锁定腔室40可设置在传送腔室50和EFEM20之间。装载锁定腔室40提供一备用空间以用于被传送到工艺腔室60之前的工艺中要被提供的基板W,或用于被传送到EFEM 20之前完成处理的基底W。
传送腔室50和装载锁定腔室40相邻地设置。当从顶侧观看时,传送腔室50可具有多边形主体。在一实例中,当从顶侧观看时,传送腔室50可具有五边形主体。在主体的外表面中,装载锁定腔室40和多个工艺腔室60沿着主体的周围布置。在主体的每个侧壁中,形成用于基板W进入的信道(未图标),且该信道连接传送腔室50、装载锁定腔室40或工艺腔室60。在每个信道中,一门(未图示)用于打开和关闭该通道,从而在其中密封。传送腔室50的内部空间设置有用于在装载锁定腔室40和工艺腔室60之间传送基板W的传送机器人53。该传送机器人53将待装载在装载锁定腔室40中的未处理的基板W传送到工艺腔室60,或将完成处理的基板W传送到装载锁定腔室40。为了在多个工艺腔室60中依序提供基板W,该基板W在工艺腔室60之间传送。在邻近EFEM 20的传送腔室50的侧壁中,布置每个装载锁定腔室40,且在该侧壁的其余部分中,布置工艺腔室60。
工艺腔室60沿着传送腔室50的周围布置。可提供多个工艺腔室60。可在每个工艺腔室60中处理基板W。工艺腔室60从传送机器人53接收基板W,处理基板W,及将经处理的基板W提供给传送机器人53。在每个工艺腔室60进行的处理可以是不同的。由工艺腔室60执行的工艺可以是在制造半导体装置或显示面板期间使用基板W的工艺。在一实例中,在工艺腔室60中的一个或多个可包括用于使用电浆处理基板W的电浆模块。
控制器70控制基板处理装置1的组成。
图2是装载锁定腔室的视图。
参照图2,装载锁定腔室40包括壳体100、基板S支撑单元110、120和盖板支撑单元130。
壳体100形成装载锁定腔室40的框架。壳体100连接传送框架21和传送腔室50。连接壳体100和传送框架21的开口(未图示)可借由一门(未图示)打开和关闭。连接壳体100和传送腔室50的开口(未图示)可借由一门(未图示)打开和关闭。在壳体100中,其中将基板S设置其中的传送区域41a、41b可设置有多个数量。在一实例中,在壳体100中,传送区域41a、41b的数量可设置与工艺腔室60的数量为相同或较多。传送区域41a、41b可垂直地布置、水平地布置或两者。传送区域41a、41b提供用于搬入待处理的基板及搬出经处理的基板的通道。
基板支撑单元110、120支撑从每个传送区域41a、41b搬入到装载锁定腔室40的基板S。基板支撑单元110、120包括第一基板支撑单元110和第二基板支撑单元120。
第一基板支撑单元110支撑基板S的底表面。第一基板支撑单元110可位于传送区域41a、41b的底部。第一基板支撑单元110设置有一形状,使得当索引机器人25、传送机器人53搬入和搬出基板S时防止干扰索引机器人25、传送机器人53。在一实例中,第一基板支撑单元110可设置有多个装载形状,从而支撑基板S的底表面。
在一实例中,第一基板支撑单元110可设置为板形,从而包括用于支撑基板S的单元和用于当索引机器人25、传送机器人53交换基板S时将基板S升高到预定高度的销。
第二基板支撑单元120支撑基板S的外周。多个第二基板支撑单元120可位于对应于基板S的外边缘的位置。在一实例中,当基板S被设置为方形,两个或更多个第二基板支撑单元120可位于基板S的边缘上。当基板S被设置为圆形时,两个或更多个第二基板支撑单元120可位于对应于基板S的任何外底表面的位置。此处,第二基板支撑单元120可沿着圆周等距地间隔开。
在第二基板支撑单元120中,可形成对应于基板S的外底表面的支撑槽121。当基板S垂直于第二基板支撑单元120布置而移动时,基板S由支撑槽121支撑并且防止偏离到外部。一外表面和支撑槽121的一外表面之间的距离可形成为大于一预定尺寸和基板S的一尺寸。即使在垂直布置基板S和第二基板支撑单元120的同时存在误差时,基板S仍可位于支撑槽121中。
可省略第一基板支撑单元110和第二基板支撑单元120中的一个。基板S可由第一基板支撑单元110或第二基板支撑单元120支撑。
盖板支撑单元130在每个传送区域41a、41b中支撑盖板150。盖板支撑单元130位于基板支撑单元110、120的外侧,并防止干扰位于基板支撑单元110、120中的基板S。盖板支撑单元130位于可防止干扰搬入和搬出基板S的索引机器人25、传送机器人53的位置。在一实例中,盖板支撑单元130可以是位于基板支撑单元110、120外侧的多个装载端口或具有预定宽度的板。盖板支撑单元130的上端可比基板支撑单元110、120的上端高出一预定高度。因此,由盖板支撑单元130支撑的盖板150可位于比位在基板支撑单元110、120中的基板S更高的位置。
在基板支撑单元110、120的外部,可以设置推动器140。推动器140设置成面向基板S的侧表面的表面可沿着基板S移动。多个推动器140可设置成相对于基板S彼此面对。在一实例中,两个推动器140可设置为基于基板S彼此面对,或者四个推动器140可设置为彼此交叉。
图3是可提供在图1的工艺腔室中的电浆模块的视图。
参照图3,工艺腔室60包括腔室2100、基座2200、喷淋头2300和电浆激发单元2400。
腔室2100提供基板处理工艺的空间。腔室2100包括主体2110和密封盖2120。主体2110的上表面是开放的并且具有一内部空间。在基板进入处有一开口(未图示)被形成在主体2110的侧壁中,且该开口可借由诸如一狭缝门(未图示)的开启和关闭装置而开启和关闭。该开启和关闭装置在基板W于腔室2100内被处理时关闭该开口,且当基板W被搬入腔室2100中并被搬出到外部时开启该开口。
在主体2110的底壁中形成有通气孔2111。通气孔2111连接到排气线2112。腔室2100内的压力通过排气线2112控制,并且在工艺中产生的反应副产物被排出到腔室2100的外部。
密封盖2120耦接到主体2110的上壁,覆盖主体2110的敞开的上表面并密封主体2110的内部。密封盖2120的上端连接到电浆激发单元2400。在密封盖2120中形成有扩展空间2121。扩展空间2121在靠近喷淋头2300时变宽。例如,扩展空间2121可以是上下颠倒的漏斗形式。
基座2200位于腔室2100中。基板被放置在基座2200的上表面。在基座2200中,可以形成冷却流体在其中循环的冷却路径(未图标)。冷却流体沿着冷却路径循环并冷却基座2200。在基座2200中,可以从偏置功率(bias power)2210施加功率以从电浆控制基板W处理。从偏置功率2210施加的功率可以是射频(Radio Frequency;RF)。基座2200借由从偏置功率2210供应的功率形成护套,并可形成高密度电浆,从而提高工艺能力。
加热构件2220可以提供在基座2200中。在一实施例中,加热构件2220可以是热线。加热构件2220将基板W加热至预定温度。
喷淋头2300耦接到主体2110的上壁。喷淋头2300具有圆形形状,并且可以平行于基座2200的上表面布置。喷淋头2300可以是铝材料,其中表面经氧化。分配孔2310可以形成在喷淋头2300中。分配孔2310可以与同心圆周间隔开一定距离以均匀地供应自由基。在扩展空间2121中的电浆扩散流向分配孔2310。在此期间,在喷淋头2300中捕获诸如电子或离子的带电粒子,并且诸如氧自由基的中性粒子穿过分配孔2310并提供到基板W。另外,喷淋头可以接地并且形成电子或离子移动的路径。
电浆激发单元2400产生电浆并供应到腔室2100。电浆激发单元2400可以设置在腔室2100的上部。电浆激发单元2400包括振荡器2410、波导2420、介电波导2430、和工艺气体供给单元2440。
振荡器2410产生电磁波。波导2420将振荡器2410与介电波导2430连接,并且提供其中将从振荡器2410产生的电磁波传递到介电波导2430的通路。工艺气体供应单元2440将工艺气体供应到腔室2100的上部。工艺气体可根据工艺供应为第一工艺气体和第二工艺气体。提供到介电波导2430的工艺气体借由电磁波形成电浆状态。电浆穿过介电波导2430并流动到扩展空间2121。
电浆激发单元2400被示例为使用电磁波。在另一实施例中,电浆激发单元2400可以被提供为电感耦合电浆激发单元和电容耦合电浆激发单元。
图4是在搬入基板之前的装载锁定腔室的视图。
如图2和图4所示,在基板S从EFEM 20被搬入到装载锁定腔室40之前,盖板150被提供在盖支撑单元130中。盖板150提供有方形环或圆形形状,以对应于基板S的外周。因此,当盖板150放置在基板S的上表面上时,基板S的外周被盖板150覆盖。盖板150的内底表面的形状对应于基板S的外周,且可包括接收槽151。因此,可以在盖板150和基板S之间形成黏附。槽152可以形成在盖板150中。槽152可以对应于盖支撑单元130的上端的形状。当盖板150位于盖支撑单元130中时,盖支撑单元130的上端位于槽152中,并且可以防止盖板150偏离盖支撑件单元130。
图5是示出在EFEM中将基板搬入装载锁定腔室的状态的视图。
参照图5,索引机器人25可将在工艺腔室60中处理的基板S搬入到装载锁定腔室40中。控制器70控制索引机器人25,使得基板S可被搬入到由基板支撑单元110、120支撑的更高的位置。当基板S垂直于可由基板支撑单元110、120支撑的位置布置时,索引机械人25向下移动,并使基板S能位于基板支撑单元110、120。
图6是示出改变基板的位置的推动器的视图。
参照图6,在从EFEM20搬入基板S之后,可以借由推动器140校正基板S的位置。索引机械人25被设定为将基板S放置在设置位置。然而,在将基板S放置基板支撑单元110、120的同时,基板S的位置和设置位置可以不同。控制器70沿着基板S将推动器140移动预定距离,并且可推动基板S使得其可以位于正确的位置。之后,推动器140以与基板S相反的方向移动,并且可以防止在移动基板S期间与其它组件干扰。
图7是将盖板设置在基板中的视图。
参照图7,传送机器人53将盖板150放置在基板S中,并从装载锁定腔室40搬出基板。
将传送机器人53搬入到装载锁定腔室40中以放置基板S的底部,升高并拾取基板S。传送机器人53进一步升高到设定高度,并将盖板150放置在基板S中。传送机器人53沿着传送腔室50移动并移动将沿着传送腔室50处理的基板S。
用于承载在基板S中的传送区域41a、41b利用盖板150和基板S执行,从而使盖支撑单元130变空。当将基板S搬入到传送腔室50时,控制器70存储盖支撑单元130被排空的传送区域41a、41b的信息。
图8是示出其中传送机器人将基板搬入到工艺腔室的状态的视图。图9是示出其中基板被设置在基座的状态的视图。
参照图8和图9,从装载锁定腔室40搬出的基板S被搬入到工艺腔室60中。
当基板S被搬入到工艺腔室60中时,升降销2230可在基座2200中升高。在基板S与基座2200垂直布置之后,传送机器人53向下移动。因此,基板S被升降销2230支撑,传送机器人53沿着传送腔室50移动。当升降销2230向下升起时,基板S被放置在基座2200的上表面。
根据实施例,搬入到工艺腔室60中的基板S被提供成使得其外周被盖板150覆盖。因此,可以防止暴露于电浆的基板S的外周所产生的现象或其程度可被降低。在一实例中,当基板S位于基座2200中时,基板S的外周的底面可以不是平面的,因此在基板S的外底面与基座S之间可能存在间隙。当处理基板S时,可能会产生此种间隙,从而损坏基板S。因此可能需要借由电浆阻断处理基板S的外周。
在一实施例中,不需要将盖板150放置在工艺腔室60中的基板S上,因此更容易维持工艺腔室60。
当基板S完成处理时,基板S以与搬入基板S相反的顺序进行。当升降销2230升高时,传送机器人53从工艺腔室60搬出置放在盖板150上的基板S。控制器70控制传送机器人53,使得基板被搬入到没有盖支撑单元130的传送区域41a、41b中。传送机器人53将基板S搬入到装载锁定腔室40,使得盖板150与盖支撑单元130垂直布置,并且将盖板150和基板S分别放置在盖支撑单元130和基板支撑单元110、120。之后,传送机器人53移动到传送腔室50,且索引机器人25到达装载锁定腔室40并搬出处理过的基板S。
前述详细描述可以仅仅是实施例的示例。此外,上述内容仅示出和描述较佳的实施例,并且其他实施例可以包括各种组合、改变和环境。此即,本发明所属技术领域中具有通常知识的人员将理解,在不背离由所附权利要求书及其等同物限定其范围的原理和精神的情况下,可以对这些实施例进行替换、修改和改变。此外,不意欲本申请的范围限于这些具体实施例或其具体特征或益处。相反地,意在将本申请的范围仅限于现在遵循的权利要求书及其等同物。
Claims (19)
1.一种基板处理装置,包括:
设备前端模块,其具有装载端口和索引机器人;
工艺腔室;
传送腔室,其具有用于相对于所述工艺腔室搬入或搬出基板的传送机器人;以及
装载锁定腔室,其位于所述传送腔室与所述设备前端模块之间,且具有用于支撑基板的基板支撑单元和用于支撑覆盖所述基板的外周的盖板的盖板支撑单元。
2.根据权利要求1所述的基板处理装置,其中所述基板支撑单元包括用于支撑所述基板的底表面的第一基板支撑单元。
3.根据权利要求1所述的基板处理装置,其中所述基板支撑单元包括用于支撑所述基板的外周的第二基板支撑单元。
4.根据权利要求1所述的基板处理装置,其中所述盖板支撑单元位于所述基板支撑单元的外侧。
5.根据权利要求1所述的基板处理装置,其中所述盖板支撑单元被定位成使得其顶端比所述基板支撑单元的顶端更高出一预定长度。
6.根据权利要求1所述的基板处理装置,其进一步包括推动器,所述推动器位于所述基板支撑单元的外侧,且能够沿设置在所述基板支撑单元中的基板的侧向移动。
7.根据权利要求6所述的基板处理装置,其中提供多个所述推动器以相对于所述基板彼此面对。
8.根据权利要求1所述的基板处理装置,其中提供多个所述工艺腔室,且所述装载锁定腔室具有多个传送区域,其中每个所述传送区域具有所述基板支撑单元和所述盖板支撑单元。
9.根据权利要求8所述的基板处理装置,其中每个所述传送区域提供所述基板从所述设备前端模块被搬入到所述传送腔室的搬入路径;以及将所述基板从所述传送腔室搬出到所述设备前端模块的搬出路经。
10.根据权利要求8所述的基板处理装置,其中所述传送区域的数量大于所述工艺腔室的数量。
11.根据权利要求1所述的基板处理装置,其中所述工艺腔室通过电浆执行工艺处理。
12.一种基板处理方法,包括以下步骤:
将未处理的基板搬入到装载锁定腔室;
将盖板设置在所述装载锁定腔室内的基板的外周上;
搬出所述未处理的基板,其中所述盖板从所述装载锁定腔室被设置到传送腔室;以及
搬入所述未处理的基板,其中所述盖板被设置到工艺腔室。
13.根据权利要求12所述的基板处理方法,其中设置所述盖板包括:
当所述未处理的基板位于被设置在所述装载锁定腔室中的所述盖板下方时,垂直地排列所述未处理的基板;以及
沿所述盖板方向升高所述未处理的基板。
14.根据权利要求13所述的基板处理方法,其中设置在所述装载锁定腔室中的所述盖板被提供为设置在盖板支撑单元中,所述盖板支撑单元被设置在用于在所述装载锁定腔室中支撑所述基板的基板支撑单元的外侧。
15.根据权利要求12所述的基板处理方法,其中将所述未处理的基板搬入到所述装载锁定腔室借由设备前端模块的索引机器人来进行;且设置所述盖板及从所述装载锁定腔室搬出所述未处理的基板借由所述传送腔室的传送机器人来进行。
16.根据权利要求12所述的基板处理方法,其中所述工艺腔室使用电浆处理所述基板。
17.一种基板处理方法,包括以下步骤:
将未处理的基板从传送腔室搬入到装载锁定腔室,及将盖板设置在所述基板的外周上;
将所述盖板设置到所述装载锁定腔室的内部空间;
将经处理的基板设置在被设置于所述装载锁定腔室中的基板支撑单元中;以及
将所述基板搬出到设备前端模块。
18.根据权利要求17所述的基板处理方法,其中将所述盖板设置到所述装载锁定腔室的内部空间包括:
将所述经处理的基板设置到被设置在所述装载锁定腔室中的盖板支撑单元的上侧;以及
将所述经处理的基板向下移动。
19.根据权利要求17所述的基板处理方法,其中将所述基板搬出到所述设备前端模块借由设置在所述设备前端模块中的索引机器人来进行;以及将所述基板搬入到所述装载锁定腔室并将所述基板设置在所述基板支撑单元中借由设置在所述传送腔室中的传送机器人来进行。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160155070A KR101754589B1 (ko) | 2016-11-21 | 2016-11-21 | 기판 처리 장치 및 기판 처리 방법 |
KR10-2016-0155070 | 2016-11-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108091589A true CN108091589A (zh) | 2018-05-29 |
CN108091589B CN108091589B (zh) | 2021-10-26 |
Family
ID=59355208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710611245.1A Active CN108091589B (zh) | 2016-11-21 | 2017-07-25 | 基板处理装置及基板处理方法 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR101754589B1 (zh) |
CN (1) | CN108091589B (zh) |
SG (1) | SG10201701124TA (zh) |
TW (1) | TWI631642B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112151412A (zh) * | 2019-06-26 | 2020-12-29 | 细美事有限公司 | 传送机器人和具有上述传送机器人的基板处理装置 |
CN112687598A (zh) * | 2019-10-17 | 2021-04-20 | 细美事有限公司 | 基板传送设备和基板处理设备 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109994358B (zh) * | 2017-12-29 | 2021-04-27 | 中微半导体设备(上海)股份有限公司 | 一种等离子处理***和等离子处理***的运行方法 |
KR102139934B1 (ko) * | 2018-02-21 | 2020-08-03 | 피에스케이홀딩스 (주) | 기판 처리 장치, 및 이를 이용하는 기판 처리 방법 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4727993A (en) * | 1984-03-09 | 1988-03-01 | Tegal Corporation | Wafer cassette having multi-directional access |
CN1533590A (zh) * | 2001-07-25 | 2004-09-29 | ���������ƴ���ʽ���� | 处理装置和处理方法 |
KR20060010153A (ko) * | 2004-07-27 | 2006-02-02 | 삼성전자주식회사 | 수율을 높일 수 있는 로드록 챔버를 가지는 반도체 제조장치 |
WO2008108604A1 (en) * | 2007-03-08 | 2008-09-12 | Sosul Co., Ltd. | Apparatus and method of processing substrates |
CN101740335A (zh) * | 2008-11-14 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | 半导体制造设备和半导体结构的刻蚀方法 |
CN102595760A (zh) * | 2011-01-10 | 2012-07-18 | 丽佳达普株式会社 | 等离子体处理设备 |
CN102714146A (zh) * | 2009-12-31 | 2012-10-03 | 应用材料公司 | 用以修改晶圆边缘与斜面沉积的遮蔽环 |
CN103094037A (zh) * | 2011-11-08 | 2013-05-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种夹持装置及应用该夹持装置的等离子体加工设备 |
US20130202387A1 (en) * | 2010-08-06 | 2013-08-08 | Tokyo Electron Limited | Substrate processing system, transfer module, substrate processing method, and method for manufacturing semiconductor element |
CN103730318A (zh) * | 2013-11-15 | 2014-04-16 | 中微半导体设备(上海)有限公司 | 一种晶圆边缘保护环及减少晶圆边缘颗粒的方法 |
CN104051293A (zh) * | 2013-03-13 | 2014-09-17 | 稳懋半导体股份有限公司 | 晶圆边缘保护装置 |
CN104103557A (zh) * | 2013-04-08 | 2014-10-15 | Psk有限公司 | 基板处理装置及其方法 |
US20140377039A1 (en) * | 2013-06-20 | 2014-12-25 | Psk Inc. | Unit and method for cooling, and apparatus and method for treating substrate |
-
2016
- 2016-11-21 KR KR1020160155070A patent/KR101754589B1/ko active IP Right Grant
-
2017
- 2017-02-13 TW TW106104613A patent/TWI631642B/zh active
- 2017-02-13 SG SG10201701124TA patent/SG10201701124TA/en unknown
- 2017-07-25 CN CN201710611245.1A patent/CN108091589B/zh active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4727993A (en) * | 1984-03-09 | 1988-03-01 | Tegal Corporation | Wafer cassette having multi-directional access |
CN1533590A (zh) * | 2001-07-25 | 2004-09-29 | ���������ƴ���ʽ���� | 处理装置和处理方法 |
KR20060010153A (ko) * | 2004-07-27 | 2006-02-02 | 삼성전자주식회사 | 수율을 높일 수 있는 로드록 챔버를 가지는 반도체 제조장치 |
WO2008108604A1 (en) * | 2007-03-08 | 2008-09-12 | Sosul Co., Ltd. | Apparatus and method of processing substrates |
CN101740335A (zh) * | 2008-11-14 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | 半导体制造设备和半导体结构的刻蚀方法 |
CN102714146A (zh) * | 2009-12-31 | 2012-10-03 | 应用材料公司 | 用以修改晶圆边缘与斜面沉积的遮蔽环 |
US20130202387A1 (en) * | 2010-08-06 | 2013-08-08 | Tokyo Electron Limited | Substrate processing system, transfer module, substrate processing method, and method for manufacturing semiconductor element |
CN102595760A (zh) * | 2011-01-10 | 2012-07-18 | 丽佳达普株式会社 | 等离子体处理设备 |
CN103094037A (zh) * | 2011-11-08 | 2013-05-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种夹持装置及应用该夹持装置的等离子体加工设备 |
CN104051293A (zh) * | 2013-03-13 | 2014-09-17 | 稳懋半导体股份有限公司 | 晶圆边缘保护装置 |
CN104103557A (zh) * | 2013-04-08 | 2014-10-15 | Psk有限公司 | 基板处理装置及其方法 |
US20140377039A1 (en) * | 2013-06-20 | 2014-12-25 | Psk Inc. | Unit and method for cooling, and apparatus and method for treating substrate |
CN103730318A (zh) * | 2013-11-15 | 2014-04-16 | 中微半导体设备(上海)有限公司 | 一种晶圆边缘保护环及减少晶圆边缘颗粒的方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112151412A (zh) * | 2019-06-26 | 2020-12-29 | 细美事有限公司 | 传送机器人和具有上述传送机器人的基板处理装置 |
CN112151412B (zh) * | 2019-06-26 | 2024-03-26 | 细美事有限公司 | 传送机器人和具有上述传送机器人的基板处理装置 |
CN112687598A (zh) * | 2019-10-17 | 2021-04-20 | 细美事有限公司 | 基板传送设备和基板处理设备 |
Also Published As
Publication number | Publication date |
---|---|
SG10201701124TA (en) | 2018-06-28 |
KR101754589B1 (ko) | 2017-07-10 |
CN108091589B (zh) | 2021-10-26 |
TWI631642B (zh) | 2018-08-01 |
TW201820501A (zh) | 2018-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108091589A (zh) | 基板处理装置及基板处理方法 | |
CN102810499B (zh) | 处理基材的设备和方法 | |
KR102059725B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
TWI579954B (zh) | 基板處理裝置及基板處理方法 | |
KR102194574B1 (ko) | 진공 처리 장치 및 트레이 | |
KR102139934B1 (ko) | 기판 처리 장치, 및 이를 이용하는 기판 처리 방법 | |
US10612130B2 (en) | Vacuum processing apparatus | |
CN101842514A (zh) | 用以密封工艺腔室的开口的方法与装置 | |
US11037807B2 (en) | Apparatus for treating substrate | |
CN108022868A (zh) | 基板支撑装置、包括其的基板处理***及基板处理方法 | |
KR100432440B1 (ko) | 종형 열처리장치 | |
TW201735091A (zh) | 具有多組四腔室的四腔室與工作台 | |
US6485604B1 (en) | Substrate processing apparatus | |
JP6067035B2 (ja) | 基板処理モジュール及びそれを含む基板処理装置 | |
KR20150029626A (ko) | 가스 처리 방법 | |
US20170352562A1 (en) | Dodecadon transfer chamber and processing system having the same | |
KR101870660B1 (ko) | 기판처리장치 및 기판처리방법 | |
US20160326648A1 (en) | Apparatus for selectively sealing a gas feedthrough | |
KR102431045B1 (ko) | 기판 처리 장치 및 기판 반송 방법 | |
KR20020022579A (ko) | 처리 장치 및 처리 시스템 | |
KR101370755B1 (ko) | 기판처리장치 | |
KR20160062626A (ko) | 이중 배기 구조의 프로세스챔버와 이를 포함하는 기판제조장치 및 기판제조방법 | |
KR102052337B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR20190101538A (ko) | 기판 정렬 장치 및 기판 처리 방법 | |
KR102095982B1 (ko) | 기판 처리 장치 및 기판 처리 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |