CN108089381A - Side electrode production method - Google Patents

Side electrode production method Download PDF

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Publication number
CN108089381A
CN108089381A CN201810002835.9A CN201810002835A CN108089381A CN 108089381 A CN108089381 A CN 108089381A CN 201810002835 A CN201810002835 A CN 201810002835A CN 108089381 A CN108089381 A CN 108089381A
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CN
China
Prior art keywords
side electrode
glass substrate
production method
electrode layer
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810002835.9A
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Chinese (zh)
Inventor
刘超
张玉军
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201810002835.9A priority Critical patent/CN108089381A/en
Publication of CN108089381A publication Critical patent/CN108089381A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

This application discloses a kind of side electrode production method, including step:Side electrode layer is formed in multiple front electrode sides and two glass substrate sides, two glass substrate is arranged on the multiple front electrode both sides;Laser ablation is carried out to the side electrode layer and forms multiple side electrodes, the multiple side electrode is electrically connected respectively with corresponding front electrode.According to technical solution provided by the embodiments of the present application, it is connected by the way that the circuit on glass substrate is transferred on side with front electrode, so as to which the binding region on original glass substrate be cancelled, the design of the ultra-narrow frame of display is realized, can be widely applied to small-size product.

Description

Side electrode production method
Technical field
The disclosure relates generally to field of liquid crystal display more particularly to side electrode production method.
Background technology
Liquid crystal display is at present all towards ultra-thin, the even Rimless development of ultra-narrow frame, and current narrow frame is basic It is difficult to accomplish four side narrow frames, and because panel binds position mostly on the ITO track plans of thin film transistor (TFT) glass, such panel At least region of 1.0~2.0mm must be reserved on the side in driving circuit during thin film transistor (TFT) glass when making, to stay Go out integrated circuit or chip on film binding position, this way is difficult to adapt to ultra-narrow to show the requirement for reducing frame.
The content of the invention
In view of drawbacks described above of the prior art or deficiency, are intended to provide a kind of side electrode production method.
In a first aspect, a kind of side electrode production method is provided, including step:
Side electrode layer is formed in multiple front electrode sides and two glass substrate sides, two glass substrate is arranged on The multiple front electrode both sides;
Laser ablation is carried out to the side electrode layer and forms multiple side electrodes, the multiple side electrode respectively with it is right The front electrode electrical connection answered.
According to technical solution provided by the embodiments of the present application, by the way that the circuit on glass substrate is transferred on side and just Face electrode is connected, and so as to which the binding region on original glass substrate be cancelled, the ultra-narrow frame for realizing display is set Meter, can be widely applied to small-size product.
Description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings, the application's is other Feature, objects and advantages will become more apparent upon:
Fig. 1 is side electrode production method flow chart in the present embodiment;
Fig. 2-Fig. 5 is side electrode production method procedure structure schematic diagram in the present embodiment;
Fig. 6 is bat printing screen structure schematic diagram in the present embodiment.
Specific embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched The specific embodiment stated is used only for explaining related invention rather than the restriction to the invention.It also should be noted that in order to Convenient for description, illustrated only in attached drawing with inventing relevant part.
It should be noted that in the case where there is no conflict, the feature in embodiment and embodiment in the application can phase Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It please refers to Fig.1, the present embodiment provides a kind of side electrode production method, including step:
Side electrode layer 4 is formed in multiple 2 sides of front electrode and two glass substrates, 1 side, two glass substrate 1 is set It puts in the multiple 2 both sides of front electrode;
Laser ablation is carried out to the side electrode layer 4 and forms multiple side electrodes 6, the multiple side electrode 6 is distinguished It is electrically connected with corresponding front electrode 2.
Circuit on glass substrate is transferred on side by the present embodiment by above-mentioned method, so as to by original glass Binding region on substrate is cancelled, and realizes the design of the ultra-narrow frame of display, can be widely applied to small-size product.
Further, the side electrode layer 4 by shift printing rubber head by sizing material bat printing to the glass substrate 1 and it is described just The side of face electrode 2.The present embodiment, by the side of sizing material bat printing to glass substrate and front electrode, is passed through by the way of bat printing The common method for forming electrode layer is configured easy to operation.
Further, the sizing material is elargol or copper glue.Sizing material in the present embodiment can be different conductive material, The making of side electrode is carried out preferably by elargol so that the side electrode of formation has preferable electric conductivity.
Further, heating platform 3, institute are respectively equipped on two faces of the glass substrate 1 away from the front electrode 2 Heating platform 3 is stated to heat the glass substrate 1.Respectively heating platform is set to be heated on two glass substrates, Realize curing to side electrode layer, and heating platform carries out heating can shorten the side electrode layer cured time, improves Production efficiency and product quality.
Further, 3 temperature of heating platform is 30-120 DEG C.The heating temperature of heating platform is controlled, by adding The temperature control cured effect of elargol of hot platform so that elargol is not penetrated into the gap between two glass substrates, is prevented Occurs the situation of short circuit between front electrode.
As shown in Fig. 2, providing two glass substrates 1 first, multiple fronts are set between the plane of two glass substrates 1 Electrode 2;Then as shown in figure 3, setting heating platform 3 respectively on two glass substrates 1, glass substrate 1 is heated, together When the side of elargol bat printing to glass substrate formed by side electrode layer 4 by shift printing rubber head, by heating platform 3 to side electricity Pole layer 4 carries out heating so that elargol is formed by curing another electrode layer;Then as described in Figure 4, to cured side electrode layer into Laser ablation forms side electrode, by the way that laser 9 is set to perform etching side electrode layer 4 in the present embodiment, ultimately forms Structure as shown in figure 5, the electrode layer size that common bat printing technology is formed is 60 μm, the application is then using laser ablation Mode performs etching the side electrode layer of formation, circuit can be accomplished to 10 μm of even smallers so that this method can be applied To the making of small size high-resolution products.
Further, the side electrode layer 4 covers side and the part glass substrate of all front electrodes 2 1 side.The side of sizing material bat printing to glass substrate is formed side electrode layer by shift printing rubber head, which covers glass The subregion of front electrode and glass substrate side between substrate, the method for this formation elargol layer are simple and convenient.
Further, described " forming side electrode layer in multiple front electrode sides and two glass substrate sides " specific bag It includes:The shift printing rubber head is from inscription rubbing sizing material on bat printing halftone, by the sizing material bat printing to the glass substrate and the front electricity Pole side forms side electrode layer.
The bat printing that shift printing rubber head in the present embodiment carries out elargol is the inscription rubbing by carrying out elargol on bat printing web plate, is led to Cross bat printing web plate carry out elargol inscription rubbing method it is simple to operation and formed elargol layer size it is easily controllable.
Further, the bat printing halftone 7 is equipped with strip halftone groove 8, and the halftone groove 8 is described for storing Sizing material.Bat printing screen structure schematic diagram as shown in fig. 6, the halftone groove 8 in bat printing halftone 7 in the present embodiment is strip, There is no the setting of circuit, the design of bat printing halftone is relatively simple, and the shape of the halftone groove set is with needing side to be formed The shape of electrode layer is identical so that the step of sizing material bat printing is simpler easy to operate.
Further, the elargol layer is performed etching includes during forming side electrode:Vacuum suction is set to fill 5 pairs of etching chips are put to be purged.
Elargol layer is performed etching in the present embodiment and is additionally added vacuum absorption device during forming side electrode, is passed through The vacuum absorption device removes the chip of etching, ensures the quality of product;Side electrode, multiple sides are formed after laser ablation Electrode is electrically connected respectively with corresponding front electrode, it is preferred that the side electrode size after laser ablation can be with front electrode Corresponding, width is of same size with front electrode.
The circuit on glass substrate is transferred on side by elargol in the present embodiment, so as to by original glass substrate On binding region cancel, realize the design of the ultra-narrow frame of display, can be widely applied to small-size product.
The preferred embodiment and the explanation to institute's application technology principle that above description is only the application.People in the art Member should be appreciated that invention scope involved in the application, however it is not limited to the technology that the particular combination of above-mentioned technical characteristic forms Scheme, while should also cover in the case where not departing from the inventive concept, it is carried out by above-mentioned technical characteristic or its equivalent feature The other technical solutions for being combined and being formed.Such as features described above has similar work(with (but not limited to) disclosed herein The technical solution that the technical characteristic of energy is replaced mutually and formed.

Claims (9)

1. a kind of side electrode production method, which is characterized in that including step:
Side electrode layer is formed in multiple front electrode sides and two glass substrate sides, two glass substrate is arranged on described Multiple front electrode both sides;
Laser ablation is carried out to the side electrode layer and forms multiple side electrodes, the multiple side electrode respectively with it is corresponding Front electrode is electrically connected.
2. side electrode production method according to claim 1, which is characterized in that the side electrode layer passes through shift printing rubber Head is by sizing material bat printing to the side of the glass substrate and the front electrode.
3. side electrode production method according to claim 2, which is characterized in that the sizing material is elargol or copper glue.
4. side electrode production method according to claim 1, which is characterized in that two glass substrates are away from described Heating platform is respectively equipped on the face of front electrode, the heating platform heats the glass substrate.
5. side electrode production method according to claim 4, which is characterized in that the heating platform temperature is 30-120 ℃。
6. side electrode production method according to claim 1, which is characterized in that the side electrode layer covers all institutes State side and part the glass substrate side of front electrode.
7. side electrode production method according to claim 6, which is characterized in that described " in multiple front electrode sides Side electrode layer is formed with two glass substrate sides " it specifically includes:Shift printing rubber head is from inscription rubbing sizing material on bat printing halftone, by the glue Expect that bat printing to the glass substrate and the front electrode side forms side electrode layer.
8. side electrode production method according to claim 6, which is characterized in that the bat printing halftone is equipped with strip Halftone groove, the halftone groove is interior to be used to store the sizing material.
9. side electrode production method according to claim 1, which is characterized in that laser is carried out to the side electrode layer Etching includes during forming side electrode:Vacuum absorption device is set to be purged etching chip.
CN201810002835.9A 2018-01-02 2018-01-02 Side electrode production method Pending CN108089381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810002835.9A CN108089381A (en) 2018-01-02 2018-01-02 Side electrode production method

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Application Number Priority Date Filing Date Title
CN201810002835.9A CN108089381A (en) 2018-01-02 2018-01-02 Side electrode production method

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CN108089381A true CN108089381A (en) 2018-05-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114600042A (en) * 2019-10-29 2022-06-07 引领科技有限公司 Display panel electrode forming device and method

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Publication number Priority date Publication date Assignee Title
JP2001051287A (en) * 1999-08-13 2001-02-23 Hitachi Ltd Semiconductor integrated circuit device and manufacturing method therefor
US20050001211A1 (en) * 2003-02-12 2005-01-06 Shunpei Yamazaki Semiconductor device
CN1734743A (en) * 2004-08-02 2006-02-15 Nec液晶技术株式会社 Method of forming wiring pattern and method of manufacturing tft substrate using the same
CN101620348A (en) * 2008-07-04 2010-01-06 清华大学 Preparation method for touch LCD screen
CN102368131A (en) * 2011-10-25 2012-03-07 深圳市华星光电技术有限公司 Liquid crystal substrate and manufacturing method and liquid crystal display device thereof
CN103140920A (en) * 2010-09-28 2013-06-05 凸版印刷株式会社 Thin film transistor, method for manufacturing same, and image display device provided with thin film transistor
CN103955085A (en) * 2014-04-14 2014-07-30 京东方科技集团股份有限公司 Substrate bonding process and substrate module to be bonded
CN104094362A (en) * 2011-12-21 2014-10-08 3M创新有限公司 Laser patterning of silver nanowire - based transparent electrically conducting coatings
CN105223747A (en) * 2015-10-27 2016-01-06 南京中电熊猫液晶显示科技有限公司 A kind of display panel
CN106646983A (en) * 2017-03-30 2017-05-10 深圳市极而峰工业设备有限公司 Making process for border of ultra narrow display screen
CN107505785A (en) * 2017-09-14 2017-12-22 深圳市华星光电技术有限公司 Liquid crystal panel and preparation method thereof, display device

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001051287A (en) * 1999-08-13 2001-02-23 Hitachi Ltd Semiconductor integrated circuit device and manufacturing method therefor
US20050001211A1 (en) * 2003-02-12 2005-01-06 Shunpei Yamazaki Semiconductor device
CN1734743A (en) * 2004-08-02 2006-02-15 Nec液晶技术株式会社 Method of forming wiring pattern and method of manufacturing tft substrate using the same
CN101620348A (en) * 2008-07-04 2010-01-06 清华大学 Preparation method for touch LCD screen
CN103140920A (en) * 2010-09-28 2013-06-05 凸版印刷株式会社 Thin film transistor, method for manufacturing same, and image display device provided with thin film transistor
CN102368131A (en) * 2011-10-25 2012-03-07 深圳市华星光电技术有限公司 Liquid crystal substrate and manufacturing method and liquid crystal display device thereof
CN104094362A (en) * 2011-12-21 2014-10-08 3M创新有限公司 Laser patterning of silver nanowire - based transparent electrically conducting coatings
CN103955085A (en) * 2014-04-14 2014-07-30 京东方科技集团股份有限公司 Substrate bonding process and substrate module to be bonded
CN105223747A (en) * 2015-10-27 2016-01-06 南京中电熊猫液晶显示科技有限公司 A kind of display panel
CN106646983A (en) * 2017-03-30 2017-05-10 深圳市极而峰工业设备有限公司 Making process for border of ultra narrow display screen
CN107505785A (en) * 2017-09-14 2017-12-22 深圳市华星光电技术有限公司 Liquid crystal panel and preparation method thereof, display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114600042A (en) * 2019-10-29 2022-06-07 引领科技有限公司 Display panel electrode forming device and method

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Application publication date: 20180529