CN108075659A - A kind of high temperature resistant Switching Power Supply and its method of work based on gallium nitride device and dsp chip - Google Patents
A kind of high temperature resistant Switching Power Supply and its method of work based on gallium nitride device and dsp chip Download PDFInfo
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- CN108075659A CN108075659A CN201711450034.0A CN201711450034A CN108075659A CN 108075659 A CN108075659 A CN 108075659A CN 201711450034 A CN201711450034 A CN 201711450034A CN 108075659 A CN108075659 A CN 108075659A
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- switching power
- dsp chip
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/157—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention relates to a kind of high temperature resistant Switching Power Supplies and its method of work based on gallium nitride device and dsp chip.High temperature resistant Switching Power Supply of the present invention includes forming closed-loop control system by dsp chip, GaN transistor and Switching Power Supply buck circuits, for the degeneration factor of single-input single-output, using heat safe dsp chip as control chip, using GaN field-effect tube as switch, the Chebyshev's filter circuit being made of heat safe inductance and capacitance resistance meets the requirement to high temperature shutoff power supply in the prior art.
Description
Technical field
The present invention relates to a kind of high temperature resistant Switching Power Supplies and its method of work based on gallium nitride device and dsp chip, belong to
In the technical field of Switching Power Supply.
Background technology
In the past thirty years, silicon device for power switching develops to gradually by occurring and enters into bottleneck, it is each even to this day
The performance of aspect is squeezed out to come by total number.Although having balanced parameter and being widely applied example, in high-temperature field,
Particularly when temperature is higher than 175 °, silicon device for power switching is not competent.It is the third generation half of representative with gallium nitride (GaN)
Conductor device can tackle 200 ° or more of operating temperature, and traditional silicon power switch is better than in terms of many electric properties
Device.
In well logging field, often as high as up to a hundred degrees Celsius of the operating temperature (being usually all higher than 175 °) of electronic component.Using
The variation of scene proposes circuit system new and higher requirement.First, the variation of temperature can cause resistance, electricity first
The parameter of the electronic original parts such as sense, capacitance has a greater change, therefore in conventional circuit design, element is considered as definite value element
Thought no longer be applicable in, the parameter value of each element is the function using temperature as independent variable, to the operating mode of each temperature section
It is calculated.Secondly, 175 ° of operating temperature alreadys exceed the operating temperature of most of integrated chips, to tackle in addition higher
Input voltage, active chip are no longer applicable in, and the selection of circuit element is only limitted to heat safe passive element, and range of choice is non-
It is often limited.
Chinese patent Authorization Notice No. 204497993U discloses a kind of switching power circuit for intelligent drilling instrument,
But the switching power circuit is to improve the stability of output direct current, can not solve drilling applications switching power circuit
The high temperature problem faced；In the prior art also without improve switching power circuit reply underground high-temperature work environment method or
Person's device.
The content of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of based on the high temperature resistant of gallium nitride device and dsp chip switch
Power supply.
The present invention also provides a kind of method of works of above-mentioned high temperature resistant Switching Power Supply.
The technical scheme is that：
A kind of high temperature resistant Switching Power Supply based on gallium nitride device and dsp chip, it is anti-mixed including the input of Chebyshev II types
Folded filter circuit, GaN transistor, Switching Power Supply buck circuits and dsp chip；
Chebyshev II types input Anti-aliasing Filter Circuits and the drain electrode of GaN transistor connects；The drain electrode of GaN transistor is led to
Cross the adc pins of Switching Power Supply buck circuits access dsp chip；The pwm output pins of dsp chip and the gate pole of GaN transistor
Connection, realizes the control to GaN transistor switch time；Dsp chip, GaN transistor and Switching Power Supply buck circuits composition are closed
Ring control system.
Chebyshev II types input Anti-aliasing Filter Circuits filter out the high frequency section of input signal, make to be input to adc pins
Signal meet sampling thheorem.In terms of the frequency response of analog filter, Chebyshev filter, which can effectively avoid, to be ended
The frequency deficiency that nearby attenuation is slow, elliptic function filter passband ripple is big.
Preferred according to the present invention, the transmission function of the Chebyshev II types input Anti-aliasing Filter Circuits is as follows：
.The transmission function of Chebyshev II types input Anti-aliasing Filter Circuits is on the basis of typical, filtered circuit topology
On, it is obtained according to the parameter value calculation of high temperature resistant device；
Preferred according to the present invention, the GaN transistor is TPH3202P；The Chebyshev II types input anti-aliasing filter
The capacitor of wave circuit is SXP37C334KAA；The inductance of Chebyshev II types input Anti-aliasing Filter Circuits is
IHLP4040DZER330M8A；The dsp chip is TMS320F28335.TPH3202P still keeps preferably switching at 175 °
Characteristic, and drain-source pressure voltage is above 140v.The operating temperature of SXP37C334KAA is higher than 175 ° and pressure voltage is higher than
140V；The inductance operating temperature of IHLP4040DZER330M8A is higher than 175 °.
A kind of method of work of above-mentioned switching power circuit is as follows including step：
1) input signal input Chebyshev II types input Anti-aliasing Filter Circuits, Chebyshev II types input anti-aliasing filter
Wave circuit filters out the high frequency section of input signal, and the signal for being input to adc pins is made to meet sampling thheorem；
2) input signal is inputted after Anti-aliasing Filter Circuits by Chebyshev II types and inputted by the drain electrode of GaN transistor
GaN transistor；
3) pwm exports the interruption of signal triggering adc pins；
3.1) when interrupting, the command register IR inside dsp chip inserts new value, the program in dsp chip
Principal function is jumped out, performs adc interrupt functions；
3.2) adc interrupt functions carry out digital-to-analogue conversion to the signal of buck circuit outputs and obtain digital signal；Wherein, buck
The input signal of circuit inputs the output of Anti-aliasing Filter Circuits for Chebyshev II types；
3.3) by the digital signal compared with normal voltage, deviation signal value is obtained；
3.4) using deviation signal value as the input of control algolithm function, calculate pwm in next cycle and export signal duty
The value of ratio；And the pwm shadow registers of dsp chip are stored in, the output as next period p wm signals；
4) opening and closing of pwm signals control GaN transistor, cooperation buck circuits realize the adjustment of output voltage；Relatively low pwm
Duty cycle reduces output voltage, and higher pwm duty cycles improve output voltage, and the specific meaning of " adjustment " here is root
Duty cycle is adjusted according to algorithm, coordinates adjusting of the buck circuits so as to fulfill output voltage；
GaN transistor is opened a period of time and is closed for a period of time in one cycle, and the length in cycle is equal to adc sample frequencys
Inverse, the time length of opening and closing depend on pwm duty cycles；
5) signal is exported to be exported by the drain electrode of GaN transistor.
Preferred according to the present invention, in the step 3.4), the design method of control algolithm function is to pass through buck circuits
It crosses Laplace transform and obtains the buck circuit transfer functions in s domains, realize the preliminary modeling to the closed-loop system；Having primary
Mobile zero pole point is added on the basis of moral figure, obtains control function；Inverse Laplace transformation is passed through then to the control function
Domain finally carries out z-transform to get to control algolithm function.
Preferred according to the present invention, the digital value calculation formula of the normal voltage in the step 3.3) is as follows：
Wherein, R1、R2For divider resistance, VobjectFor target voltage.
Beneficial effects of the present invention are：
1. high temperature resistant Switching Power Supply of the present invention, is the degeneration factor of single-input single-output, use is heat safe
Dsp chip is as control chip, using GaN field-effect tube as switch, the Qie Bixue being made of heat safe inductance and capacitance resistance
Husband's filter circuit meets the requirement to high temperature shutoff power supply in the prior art.
Description of the drawings
Fig. 1 is the circuit diagram that Chebyshev II types of the present invention input Anti-aliasing Filter Circuits；
Fig. 2 is Switching Power Supply buck circuits of the present invention；
Fig. 3 is the flow diagram of the control of closed-loop control system of the present invention；
Fig. 4 is the main program flow chart of dsp chip of the present invention；
Fig. 5 is the Bode diagram of closed-loop control system of the present invention；
Fig. 6 is the frequency response chart of Chebyshev's filter circuit.
Specific embodiment
With reference to embodiment and Figure of description, the present invention will be further described, but not limited to this.
Embodiment 1
As shown in Figs. 1-3.
A kind of high temperature resistant Switching Power Supply based on gallium nitride device and dsp chip, it is anti-mixed including the input of Chebyshev II types
Folded filter circuit, GaN transistor, Switching Power Supply buck circuits and dsp chip；
Chebyshev II types input Anti-aliasing Filter Circuits and the drain electrode of GaN transistor connects；The drain electrode of GaN transistor is led to
Cross the adc pins of Switching Power Supply buck circuits access dsp chip；The pwm output pins of dsp chip and the gate pole of GaN transistor
Connection, realizes the control to GaN transistor switch time；Dsp chip, GaN transistor and Switching Power Supply buck circuits composition are closed
Ring control system.
Chebyshev II types input Anti-aliasing Filter Circuits filter out the high frequency section of input signal, make to be input to adc pins
Signal meet sampling thheorem.In terms of the frequency response of analog filter, Chebyshev filter, which can effectively avoid, to be ended
The frequency deficiency that nearby attenuation is slow, elliptic function filter passband ripple is big.
The transmission function of the Chebyshev II types input Anti-aliasing Filter Circuits is as follows：
.The transmission function of Chebyshev II types input Anti-aliasing Filter Circuits is on the basis of typical, filtered circuit topology
On, it is obtained according to the parameter value calculation of high temperature resistant device；
Preferred according to the present invention, the GaN transistor is TPH3202P；The Chebyshev II types input anti-aliasing filter
The capacitor of wave circuit is SXP37C334KAA；The inductance of Chebyshev II types input Anti-aliasing Filter Circuits is
IHLP4040DZER330M8A；The dsp chip is TMS320F28335.TPH3202P still keeps preferably switching at 175 °
Characteristic, and drain-source pressure voltage is above 140v.The operating temperature of SXP37C334KAA is higher than 175 ° and pressure voltage is higher than
140V；The inductance operating temperature of IHLP4040DZER330M8A is higher than 175 °.
The high temperature resistant switching power circuit of the present embodiment is operated under 175 ° of working environment, in input voltage 140V-40V
When remain to stable output 36v voltages, it can be seen that the high temperature resistance of the high temperature resistant Switching Power Supply of the present embodiment.
Embodiment 2
As Figure 4-Figure 6.
A kind of method of work of switching power circuit as described in Example 1 is as follows including step：
1) input signal input Chebyshev II types input Anti-aliasing Filter Circuits, Chebyshev II types input anti-aliasing filter
Wave circuit filters out the high frequency section of input signal, and the signal for being input to adc pins is made to meet sampling thheorem；
2) input signal is inputted after Anti-aliasing Filter Circuits by Chebyshev II types and inputted by the drain electrode of GaN transistor
GaN transistor；
3) pwm exports the interruption of signal triggering adc pins；
3.1) when interrupting, the command register IR inside dsp chip inserts new value, the program in dsp chip
Principal function is jumped out, performs adc interrupt functions；
3.2) adc interrupt functions carry out digital-to-analogue conversion to the signal of buck circuit outputs and obtain digital signal；Wherein, buck
The input signal of circuit inputs the output of Anti-aliasing Filter Circuits for Chebyshev II types, i.e., in Fig. 1, Fig. 2
ChebyshevVo；
3.3) by the digital signal compared with normal voltage, deviation signal value is obtained；The number of the normal voltage
Word value calculation formula is as follows：
Wherein, R1、R2For divider resistance, VObjectFor target voltage.
3.4) using deviation signal value as the input of control algolithm function, calculate pwm in next cycle and export signal duty
The value of ratio；And the pwm shadow registers of dsp chip are stored in, the output as next period p wm signals；
4) opening and closing of pwm signals control GaN transistor, cooperation buck circuits realize the adjustment of output voltage；Relatively low pwm
Duty cycle reduces output voltage, and higher pwm duty cycles improve output voltage, and the specific meaning of " adjustment " here is root
Duty cycle is adjusted according to algorithm, coordinates adjusting of the buck circuits so as to fulfill output voltage；
GaN transistor is opened a period of time and is closed for a period of time in one cycle, and the length in cycle is equal to adc sample frequencys
Inverse, the time length of opening and closing depend on pwm duty cycles；
5) signal is exported to be exported by the drain electrode of GaN transistor.
Adc sample frequencys are arranged to 2.5MHz in the present embodiment, and from the frequency response of transmission function, signal exists
10e05 has nearby been decayed to below cutoff frequency, meets sampling thheorem.Spectrogram after angular frequency normalization is as shown in Figure 5；
It can be seen that the system for stable single-input single-output closed-loop control system, is effectively kept away first by Bode diagram Fig. 5
The destabilizing factor that input mutation is brought is exempted from, the output of system is made to maintain always in stable scope, avoids tending to be infinite.
Embodiment 3
The method of work of switching power circuit as described in Example 2, further, in the step 3.4), control is calculated
The design method of method function is that buck circuits are obtained the buck circuit transfer functions in s domains, realization pair by Laplace transform
The preliminary modeling of the closed-loop system；By matlab, mobile zero pole point is added on the basis of having Bode diagram, is controlled
Function；To the control function by inverse Laplace transformation to time domain, finally progress z-transform is to get to control algolithm function.
Claims (6)
1. a kind of high temperature resistant Switching Power Supply based on gallium nitride device and dsp chip, which is characterized in that including Chebyshev's II types
Input Anti-aliasing Filter Circuits, GaN transistor, Switching Power Supply buck circuits and dsp chip；The input of Chebyshev II types is anti-mixed
The drain electrode of folded filter circuit and GaN transistor connects；The drain electrode of GaN transistor accesses DSP cores by Switching Power Supply buck circuits
The adc pins of piece；The pwm output pins of dsp chip and the gate pole of GaN transistor connect, and realize to GaN transistor switch time
Control；Dsp chip, GaN transistor and Switching Power Supply buck circuits form closed-loop control system.
2. the high temperature resistant Switching Power Supply according to claim 1 based on gallium nitride device and dsp chip, which is characterized in that
The transmission function of the Chebyshev II types input Anti-aliasing Filter Circuits is as follows：
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</mrow>
</mfrac>
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3. the high temperature resistant Switching Power Supply according to claim 1 based on gallium nitride device and dsp chip, which is characterized in that
The GaN transistor is TPH3202P；The capacitor of Chebyshev II types input Anti-aliasing Filter Circuits is
SXP37C334KAA；The inductance of the Chebyshev II types input Anti-aliasing Filter Circuits is IHLP4040DZER330M8A；Institute
Dsp chip is stated as TMS320F28335.
4. a kind of method of work of the switching power circuit as described in claim 1-3 any one, which is characterized in that including step
It is as follows：
1) input signal input Chebyshev II types input Anti-aliasing Filter Circuits, Chebyshev II types input anti-aliasing filter electricity
Road filters out the high frequency section of input signal, and the signal for being input to adc pins is made to meet sampling thheorem；
2) input signal is inputted after Anti-aliasing Filter Circuits by Chebyshev II types and inputs GaN by the drain electrode of GaN transistor
Transistor；
3) pwm exports the interruption of signal triggering adc pins；
3.1) when interrupting, the command register IR inside dsp chip inserts new value, and the program in dsp chip is jumped out
Principal function performs adc interrupt functions；
3.2) adc interrupt functions carry out digital-to-analogue conversion to the signal of buck circuit outputs and obtain digital signal；Wherein, buck circuits
Input signal for Chebyshev II types input Anti-aliasing Filter Circuits output；
3.3) by the digital signal compared with normal voltage, deviation signal value is obtained；
3.4) using deviation signal value as the input of control algolithm function, calculate pwm in next cycle and export signal dutyfactor
Value；And the pwm shadow registers of dsp chip are stored in, the output as next period p wm signals；
4) opening and closing of pwm signals control GaN transistor, cooperation buck circuits realize the adjustment of output voltage；
5) signal is exported to be exported by the drain electrode of GaN transistor.
5. the method for work of switching power circuit according to claim 4, which is characterized in that in the step 3.4), control
The design method of algorithmic function is that buck circuits are obtained the buck circuit transfer functions in s domains by Laplace transform, is realized
Preliminary modeling to the closed-loop system；Mobile zero pole point is added on the basis of having Bode diagram, obtains control function；To institute
Control function is stated by inverse Laplace transformation to time domain, finally progress z-transform is to get to control algolithm function.
6. the method for work of switching power circuit according to claim 4, which is characterized in that the standard in the step 3.3)
The digital value calculation formula of voltage is as follows：
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</mrow>
</mfrac>
</mrow>
Wherein, R1、R2For divider resistance, VObjectFor target voltage.
Priority Applications (1)
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|---|---|---|---|
| CN201711450034.0A CN108075659A (en) | 2017-12-27 | 2017-12-27 | A kind of high temperature resistant Switching Power Supply and its method of work based on gallium nitride device and dsp chip |
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|---|---|---|---|
| CN201711450034.0A CN108075659A (en) | 2017-12-27 | 2017-12-27 | A kind of high temperature resistant Switching Power Supply and its method of work based on gallium nitride device and dsp chip |
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| CN108075659A true CN108075659A (en) | 2018-05-25 |
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ID=62155551
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Cited By (2)
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|---|---|---|---|---|
| CN111865232A (en) * | 2020-07-22 | 2020-10-30 | 北京邮电大学 | Wideband power amplifier and radio frequency system based on gallium nitride and with fusion filtering function |
| CN112152450A (en) * | 2020-09-22 | 2020-12-29 | 深圳市微特自动化设备有限公司 | Based on ADC and PWM closed-loop control adjustable power supply circuit and power supply unit |
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| CN112152450A (en) * | 2020-09-22 | 2020-12-29 | 深圳市微特自动化设备有限公司 | Based on ADC and PWM closed-loop control adjustable power supply circuit and power supply unit |
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Application publication date: 20180525 |